CN207397276U - A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location - Google Patents
A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location Download PDFInfo
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- CN207397276U CN207397276U CN201721431068.0U CN201721431068U CN207397276U CN 207397276 U CN207397276 U CN 207397276U CN 201721431068 U CN201721431068 U CN 201721431068U CN 207397276 U CN207397276 U CN 207397276U
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- mosfet
- electromagnetic
- marx
- electromagnetic pulse
- power supply
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Abstract
The utility model discloses a kind of nanosecond electromagnetic pulse generators for electromagnetism direct fault location, to generate transient electromagnetic pulse signal, belong to electromagnetism direct fault location field.The utility model mainly includes DC power supply, signal generator, Marx generators, MOSFET driving circuits and electromagnetic probe.DC power supply is respectively Marx generators and MOSFET drive circuitries, and signal generator provides pulse signal for MOSFET driving circuits, controls the turn-on and turn-off of MOSFET, and then generates pulsewidth on electromagnetic probe, the transient electromagnetic pulse that frequency is setting value.The utility model device can generate that amplitude is adjustable, the voltage pulse signal of pulse width variability (200 2000ns) at load end electromagnetic probe both ends, and then the transient electromagnetic pulse of pulsewidth, frequency for the varying strength of setting value is generated on electromagnetic probe.The electromagnetic pulse generator design principle of the utility model is simple, and manufacture is at low cost, and circuit stability is good.
Description
Technical field
The utility model is related to electromagnetic pulse direct fault location field more particularly to a kind of nanoseconds for electromagnetism direct fault location
Grade electromagnetic pulse generator.
Background technology
With the continuous diminution of CMOS technology characteristic size, the Electro Magnetic Compatibility of integrated circuit receives more and more passes
Note and research.Electromagnetism direct fault location (EMFI) refers to the local high-intensity magnetic field attack chip generated using electromagnetic probe, so as to cause
Chip internal generates the inductive voltage and current of transient state, to introducing failure by attack chip.Electromagnetism direct fault location is as a kind of new
The attack method of type can attack the part of chip and obtain its confidential information using cryptanalysis technology, extensive
Using.To research and develop effective safeguard procedures, it is necessary to study failure mechanism of the electromagnetic pulse direct fault location to IC chip.Cause
This, developing the electromagnetic pulse generator of a Parameter adjustable just seems necessary.
Marx generators conveniently by when cascading and generating high pressure because that can be widely used in electromagnetism direct fault location field.Mesh
Although the pulse amplitude of preceding developed electromagnetic pulse generator generation is higher, the rise time is shorter, control circuit complexity,
Experimental provision is bulky, and due to the use of spark gap etc. as switching, service life and frequency are very limited,
The adjusting of amplitude and pulsewidth is also highly difficult.Due to switch mosfet device have compact, high repetition frequency, it is light, inexpensive and
The advantages that high efficiency, can combine MOSFET driving circuits, generate the big pulse signal of current changing rate, can develop circuit
Simple in structure, at low cost, electromagnetic pulse output frequency and the adjustable nanosecond electromagnetic pulse generator of intensity.
Utility model content
The purpose of this utility model is to overcome deficiency of the prior art, provide a kind of for electromagnetism direct fault location
Nanosecond electromagnetic pulse generator, using switching devices of the MOSFET as Marx generators, based on Hspice software for circuit
Simulation analysis, instruct the selection of circuit components and the design of PCB, realize the controllable tune of electromagnetic pulse output frequency and intensity
Section.
The purpose of this utility model is achieved through the following technical solutions：
A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location, including DC power supply, signal generator,
Marx generators, MOSFET driving circuits and electromagnetic probe,
The DC power supply is connected respectively with the MOSFET driving circuits, Marx generators, is driven for the MOSFET
Circuit and the Marx generators provide power supply；
The MOSFET driving circuits are built-in with MOSFET driving chips, transient voltage suppressor diode (TVS), protection
Resistance (R1) and raster data model resistance (Rg)；The input terminal of the MOSFET driving chips and the output terminal of the signal generator
Connection, the output terminal of the MOSFET driving chips are connected with the raster data model resistance (Rg), and the transient voltage inhibits two
Pole pipe (TVS) is connected with the raster data model resistance (Rg), the protective resistance (R1) and the transient voltage suppressor diode
(TVS) it is in parallel；
The Marx generators include charging isolation resistance (RC) and one to the adjustable Marx circuits of level Four, the charging every
One end from resistance (RC) is connected with the output terminal of the DC power supply, the high pressure for Marx circuits isolate with DC power supply and
Charging current limiter；Two poles that the other end of the charging isolation resistance (RC) passes through conducting wire and the first order circuit of the Marx circuits
The anode connection of pipe, every grade of Marx circuit are made of switch mosfet, storage capacitor and diode；In the Marx electricity described in every grade
The cathode of diode is connected by conducting wire with the point in parallel of switch mosfet and storage capacitor in road；The Marx circuits by
Jumper cap is placed to change circuit structure in junctions at different levels on pcb board；The grid source electrode of switch mosfet respectively with it is described
The transient voltage suppressor diode (TVS) of MOSFET driving circuits is in parallel, is led with to avoid switch mosfet grid source over-voltage
Cause device failure；When switch mosfet is off state, diode current flow forms the charge current loop of storage capacitor, storage
Can capacitance charged in parallel to the DC power supply setting voltage value；When switch mosfet is in the conduction state, diode is anti-
The discharge current circuit of storage capacitor is formed to cut-off, fills with the storage capacitor to preset voltage value in a series arrangement to institute
It states electromagnetic probe to discharge, by the ON time for controlling switch mosfet electromagnetic probe both ends is made to obtain corresponding pulses width
High-voltage nanosecond pulse square wave, realize on electromagnetic probe generate pulsewidth, frequency be setting value transient electromagnetic pulse；When
When switch mosfet backs off, charge again to storage capacitor.
Further, the electromagnetic probe includes three coil turn, copper wire diameter and ferrite magnetic core diameter parameters；It is logical
It crosses and different types of electromagnetic probe is obtained to the setting of three parameters, to generate the electromagnetic pulse signal of varying strength.
Further, electromagnetic pulse intensity caused by the electromagnetic probe and the current changing rate on electromagnetic probe are into just
Than.
Compared with prior art, advantageous effect caused by the technical solution of the utility model is：
1) the utility model uses switching devices of the MOSFET as Marx generators so that the weight of electromagnetic pulse generator
Complex frequency is high, and service life is long.
2) the utility model passes through MOSFET driving chips and the grid of low-resistance value in the drive part of switch mosfet
Resistance Rg is driven to carry out fast charging and discharging to switch mosfet, it, can be at electromagnetic probe both ends to improve the switching speed of MOSFET
Rising edge and trailing edge are generated up to the other voltage pulse of nanosecond, and then pulsewidth, frequency are generated as setting on electromagnetic probe
The transient electromagnetic pulse of value.
3) the utility model uses different types of electromagnetic probe, convenient for generating the electromagnetic pulse of different electromagnetism intensities letter
Number.
4) simulation analysis of the utility model based on Hspice softwares instruct the selection of circuit components and setting for pcb board
Meter, the design that circuit occurs for electromagnetic pulse provide reference；Circuit job stability is high, realizes electromagnetic pulse amplitude, arteries and veins
Wide and frequency arbitrary adjusting can generate the sensing of highest 2.9V in the single turn receiving coil that 0.5mm distance on diameter is 1.5mm
Voltage is laid a good foundation to carry out electromagnetism fault injection experiment.
Description of the drawings
Fig. 1 is the functional block diagram of electromagnetic pulse generator.
Fig. 2 is the structure diagram of MOSFET driving circuits.
Fig. 3 is the adjustable Marx generator circuits principle schematic of series.
Fig. 4 (a) and Fig. 4 (b) is the timing chart of electromagnetic probe both ends output respectively.
Specific embodiment
The utility model is described in further detail with reference to specific embodiment.
As shown in Figure 1, be the functional block diagram of electromagnetic pulse generator, including：DC power supply, signal generator, Marx hairs
Raw device, MOSFET driving circuits and electromagnetic probe.DC power supply is respectively Marx generators and MOSFET drive circuitries, is believed
Number generator provides pulse signal for MOSFET driving circuits, controls the turn-on and turn-off of switch mosfet, and then is visited in electromagnetism
Pulsewidth is generated on head, the transient electromagnetic pulse that frequency is setting value.
As shown in Fig. 2, it is the circuit design structure schematic diagram of the MOSFET driving circuits.Driving chip and MOSFET grid
Interpolar concatenation driving resistance Rg, appropriate value, to reduce drive signal concussion amplitude；Simultaneously in MOSFET grid sources connected in parallel transient states
Voltage suppression diode TVS and resistance R1, further to limit MOSFET grid source over-voltages.
As shown in figure 3, it is the circuit diagram of the Marx generators.It is n grades adjustable that the utility model devises series
Marx generator circuits, every grade of circuit are made of diode, switch mosfet and storage capacitor.N takes 1 in the present embodiment, in figure,
D1~D2n is diode, and C1~Cn is storage capacitor, and M1~Mn is switch mosfet, and VDD is DC power supply, and RC is limited galvanic electricity
Resistance, Magnetic_Microprobe are the electromagnetic probe of load end.
MOSFET driving chips selected by the utility model are IXDN609PI, and selected transient voltage inhibits two poles
It manages as SMBJ16CA, selected diode is fast recovery diode DSEI60-06A, and selected switch mosfet is
IXFB100N50Q3。
It is as follows：
(1) electromagnetic probe for attack is chosen
The utility model has selected cylindrical ferrite magnetic core to enhance the magnetic conductivity of probe, and uses a diameter of 0.1mm
Copper wire devise 15 specific compact electromagnetics probes, probe diameter is respectively 0.7mm, 1mm and 1.2mm, the number of turn of coil
Respectively 1,3,5,7,9, to generate the electromagnetic pulse in different attack regions and different electromagnetism intensities；The electricity that the present embodiment is selected
The a diameter of 1.2mm of magnetic probe, coil turn 7；
(2) be driving chip power supply and be storage capacitor charge
As shown in Fig. 2, DC power supply provides the supply voltage of 18V for MOSFET driving chips, the signal generator
Input signal of the start pulse signal as MOSFET driving chips, after driving chip, the amplitude of output pulse signal is
18V, the most fast rising and falling time of pulse is up to 20ns, to the turn-on and turn-off of fast driving MOSFET；
As shown in figure 3, in the charging stage, switch mosfet M1~Mn shut-offs, diode D1~D2n turns on to form charging electricity
Logical circulation road, DC power supply charge to direct current power source voltage by current limiting safeguard resistor RC and diode pair shunt capacitance C1~Cn
VDD；
(3) in MOSFET conducting phases to capacitance discharged in series
As shown in figure 3, in discharge regime, M1~Mn is turned on, and D1~D2n reversely ends, and capacitance C1~Cn is in a series arrangement
It discharges, n grades of equivalent series capacitance voltages are added rapidly to load electromagnetic probe both ends, it is made to obtain the voltage of n times of VDD, use
To generate the electromagnetic pulse of transient state on electromagnetic probe；
(4) in generating transient electromagnetic pulse on electromagnetic probe
The present embodiment is shown in voltage pulse waveforms caused by electromagnetic probe both ends such as Fig. 4 (a), 4 (b)；During test, choosing
With level-one Marx generator circuits, DC power output voltage VDD is 0~50V, and current-limiting resistance RC is 1K Ω, resistance
Rg is 1 Ω, and the load resistance RL to connect with electromagnetic probe is 20 Ω；Fig. 4 (a) is to be set according to the pulsewidth of the signal generator
It is fixed, respectively in the voltage pulse signal that load end output pulse width is 200ns, 1us and 2us；Fig. 4 (b) distinguishes for DC power supply VDD
The voltage pulse waveforms of load end in the case of output 24V, 38V and 50V voltage；
The utility model use a diameter of 1.5mm single turn receiving coil, by BNC coaxial wires will test coil with
Oscillograph connects, to test the size for the induced electromotive force that different electromagnetic probes generates on receiving coil；Experiment measures,
When using three-level Marx generator circuits, and electromagnetic probe fixed placement is directly over receiving coil during 0.5mm places, in reception line
The induced voltage measured on circle is up to 2.9V, and chip to be attacked can be made to generate failure.
The utility model is not limited to embodiments described above.Above the description of specific embodiment is intended to describe
With illustrate the technical solution of the utility model, above-mentioned specific embodiment is only schematical, is not restricted.
In the case of not departing from the utility model aims and scope of the claimed protection, those of ordinary skill in the art are in this practicality
The specific conversion of many forms can be also made under new enlightenment, these are belonged within the scope of protection of the utility model.
Claims (3)
1. a kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location, which is characterized in that including DC power supply, signal
Generator, Marx generators, MOSFET driving circuits and electromagnetic probe,
The DC power supply is connected respectively with the MOSFET driving circuits, Marx generators, is the MOSFET driving circuits
Power supply is provided with the Marx generators；
The MOSFET driving circuits are built-in with MOSFET driving chips, transient voltage suppressor diode (TVS), protective resistance
(R1) and raster data model resistance (Rg)；The input terminal of the MOSFET driving chips connects with the output terminal of the signal generator
It connects, the output terminal of the MOSFET driving chips is connected with the raster data model resistance (Rg), and the transient voltage inhibits two poles
Pipe (TVS) is connected with the raster data model resistance (Rg), the protective resistance (R1) and the transient voltage suppressor diode
(TVS) it is in parallel；
The Marx generators include charging isolation resistance (RC) and one to the adjustable Marx circuits of level Four, and electricity is isolated in the charging
One end of resistance (RC) is connected with the output terminal of the DC power supply, isolates and charges with DC power supply for the high pressure of Marx circuits
Current limliting；The other end of the charging isolation resistance (RC) passes through the diode of conducting wire and the first order circuit of the Marx circuits
Anode connects, and every grade of Marx circuit is made of switch mosfet, storage capacitor and diode；In the Marx circuits described in every grade
The cathode of diode is connected by conducting wire with the point in parallel of switch mosfet and storage capacitor；The Marx circuits pass through in PCB
Jumper cap is placed to change circuit structure in junctions at different levels on plate；The grid source electrode of switch mosfet drives respectively with the MOSFET
The transient voltage suppressor diode (TVS) of dynamic circuit is in parallel, with to avoid switch mosfet grid source over-voltage device is caused to damage
It is bad.
2. a kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location according to claim 1, which is characterized in that
The electromagnetic probe includes three coil turn, copper wire diameter and ferrite magnetic core diameter parameters；By to three parameters
Setting obtain different types of electromagnetic probe, to generate the electromagnetic pulse signal of varying strength.
3. a kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location according to claim 1, which is characterized in that
Electromagnetic pulse intensity is directly proportional to the current changing rate on electromagnetic probe caused by the electromagnetic probe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721431068.0U CN207397276U (en) | 2017-10-31 | 2017-10-31 | A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721431068.0U CN207397276U (en) | 2017-10-31 | 2017-10-31 | A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207397276U true CN207397276U (en) | 2018-05-22 |
Family
ID=62327715
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721431068.0U Expired - Fee Related CN207397276U (en) | 2017-10-31 | 2017-10-31 | A kind of nanosecond electromagnetic pulse generator for electromagnetism direct fault location |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207397276U (en) |
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2017
- 2017-10-31 CN CN201721431068.0U patent/CN207397276U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180522 Termination date: 20181031 |
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| CF01 | Termination of patent right due to non-payment of annual fee |