CN107808858A - Power device and its (PCC) power - Google Patents
Power device and its (PCC) power Download PDFInfo
- Publication number
- CN107808858A CN107808858A CN201711091418.8A CN201711091418A CN107808858A CN 107808858 A CN107808858 A CN 107808858A CN 201711091418 A CN201711091418 A CN 201711091418A CN 107808858 A CN107808858 A CN 107808858A
- Authority
- CN
- China
- Prior art keywords
- fin
- lead frame
- power device
- power
- radiator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005855 radiation Effects 0.000 claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 28
- 239000006071 cream Substances 0.000 claims description 24
- 238000009434 installation Methods 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000005439 thermosphere Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention provides a kind of power device and its (PCC) power, wherein, power device includes chip and lead frame, the power device also includes the fin being located under the lead frame, insulating radiation layer is provided between the fin and the lead frame, and encapsulated layer is enclosed with the chip and the lead frame.The power device of the present invention is by the way of by chip, the molding of lead frame half, and insulating radiation layer is provided between lead frame and fin, and then while the radiating of device and insulating requirements are ensured, and exposed fin is not charged, it can be directly mounted on heat abstractor, it is highly reliable, and do not limited by use environment, such as moist, high pressure, is applicable to different environment.
Description
Technical field
The invention belongs to technical field of electronic equipment, is to be related to a kind of power device and its (PCC) power more specifically.
Background technology
With the progress of electronic technology, power device constantly makes towards more high-power, bigger heat dispersion and preferably
Developed with the life-span, the heat dissipation problem of power device, Insulation Problems, be need emphasis to consider during design one in actual applications
Part.
Current Main Means are to be realized to insulate with the full molding of resin (or total incapsulation) method, i.e., will using epoxy resin
Device chip and lead frame are integrally encapsulated, and are then installed on a heat sink, so as to realize insulation, can be prevented powered again
Lead frame and other conductors form loop, as TO-220F is encapsulated；And this method heat dispersion is undesirable, because of epoxy resin
Thermal conductivity it is poor, its thermal conductivity (thermal conductivity factor) only has 0.2W/ (mK), when the power of power device is larger, power device
Very high heat is produced when part works can not effectively realize radiating, i.e. the program belongs to by reducing product heat dispersion come real
Existing insulating properties, can not be applicable when power device radiating requirements are high.
And fin is had in lead frame with traditional, then by lead frame, the molding of chip half, that is, utilize epoxy
Device chip and leadframe portion are encapsulated by resin, and fin is exposed to realize high radiating requirements, to be somebody's turn to do
Internal circuit one in scheme in fin and lead frame, fin category electrical body during work, in fin and radiator
During connection, an insulation rubber cushion need to be added to prevent from forming loop with other conductors so as to damage between device fin and radiator
Product, although the program can realize high radiating requirements, because its fin is powered, in the environment of high humidity, there may be electricity
Arc causes short circuit, and the insulation rubber cushion heat conductivility is poor (thermal conductivity about 1.3W/ (mK)), insulating cement pad inherently one
Kind grease type material, poor thermal conductivity, in order to meet that it is very thin that heat conductivility must obtain thickness control, and then causes its insulating properties not
Good, i.e., easily producing electric arc in wet environment, high-voltage applications causes Damage by Short Circuit complete machine, and reliability is not high, using by environment
Limitation.
The content of the invention
It is an object of the invention to provide a kind of power device, to solve to radiate in power device present in prior art
Performance and insulating properties are bad, and reliability is not high, use the technical problem limited by environment.
To achieve the above object, the technical solution adopted by the present invention is：A kind of power device, including chip and lead frame
Frame, the power device also include the fin located at the lead frame lower end, the fin and the lead frame it
Between be provided with insulating radiation layer, and be enclosed with encapsulated layer on the chip and the lead frame.
As the preferred scheme of the present invention, the fin is connected with the insulating radiation layer by high temperature tin cream,
The insulating radiation layer is connected with the lead frame by high temperature tin cream.
As the preferred scheme of the present invention, normal temperature tin paste layer is provided between the chip and the lead frame.
As the preferred scheme of the present invention, the fin is metal fin.
As the preferred scheme of the present invention, the insulating radiation layer is ceramic layer.
As the preferred scheme of the present invention, the encapsulated layer is epoxy resin layer.
The beneficial effect of power device provided by the invention is：It is compared with the prior art, power device of the invention is adopted
With by the mode of chip, the molding of lead frame half, and insulating radiation layer is provided between lead frame and fin, and then protected
While demonstrate,proving radiating and the insulating requirements of device, and exposed fin is not charged, can be directly mounted on heat abstractor,
It is highly reliable, and do not limited by use environment, such as moist, high pressure, it is applicable to different environment.
Present invention also offers a kind of (PCC) power, including radiator and at least one power device as described above,
Wherein, the power device is arranged on the radiator by the connection of the fin and the radiator.
As the preferred scheme of the present invention, the fin is detachably connected with the radiator.
As the preferred scheme of the present invention, the fin and the radiator mode connects for screw or snap connection.
As the preferred scheme of the present invention, the radiator is provided with radiator fan installation position.
The beneficial effect of (PCC) power provided by the invention is：Compared with prior art, in (PCC) power of the present invention,
Insulating radiation layer is provided between lead frame and fin, and then while the radiating of device and insulating requirements are ensured, and
And exposed fin is not charged, different environment is applicable to, and at least one power device by fin and can dissipate
The connection installation of hot device is on a heat sink, you can installs multiple power devices on a heat sink, realizes the integrated of more power devices
Radiating so that overall structure is more compact, can meet the needs of high-power electric appliance.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
In the required accompanying drawing used be briefly described, it should be apparent that, drawings in the following description be only the present invention some
Embodiment, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these
Accompanying drawing obtains other accompanying drawings.
Fig. 1 is the configuration schematic diagram (encapsulated layer is not shown) for the power device that the embodiment of the present invention 1 provides；
Fig. 2 is the structural representation for the power device that the embodiment of the present invention 1 provides；
Fig. 3 is the structural representation for the (PCC) power that the embodiment of the present invention 2 provides；
Wherein, each reference in figure：
100th, power device；
110th, chip；120th, lead frame；130th, fin；140th, insulating radiation layer；150th, encapsulated layer；
200th, (PCC) power；
210th, radiator；220th, radiator fan installation position.
Embodiment
In order that technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Drawings and Examples are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
It should be noted that when element is referred to as " being fixed on " or " being arranged at " another element, it can be directly another
On one element or it is connected on another element.When an element is known as " being connected to " another element, it can
To be directly to another element or be indirectly connected on another element.
It is to be appreciated that term " length ", " width ", " on ", " under ", "front", "rear", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " top ", " bottom " " interior ", " outer " are to be closed based on orientation shown in the drawings or position
System, it is for only for ease of and describes the present invention and simplify description, rather than indicates or imply that signified device or element must have
Specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
Embodiment 1
Also referring to Fig. 1 and Fig. 2, now power device 100 provided by the invention is illustrated.Power device 100, its
Including chip 110 and lead frame 120, power device 100 also includes the fin 130 located at the lower end of lead frame 120, radiating
Insulating radiation layer 140 is provided between piece 130 and lead frame 120, and encapsulated layer is enclosed with chip 110 and lead frame 120
150。
In above-mentioned, specifically, chip 110 is arranged on lead frame 120, the lower end of lead frame 120 is provided with fin
130, and the power device 100 is by the way of half molding, i.e., chip 110, be enclosed with encapsulated layer 150 on lead frame 120,
I.e. using insulating materials, by chip 110, the molding of lead frame 120 half, (such as epoxide resin material, i.e. encapsulated layer 150 is epoxy
Resin bed), fin 130 is exposed to come, and then meet high radiating using the high thermal conductivity (thermal conductivity is high) of fin 130
It is required that if fin 130 is that (i.e. the material of fin 130 is metal to metal fin, and the thermal conductivity of metal is high, heat conductivility
It is good), and insulating radiation layer 140 is provided between fin 130 and lead frame 120 (for example, insulating radiation layer 140 can be ceramics
Layer, i.e., the material of insulating radiation layer 140 is ceramic material, i.e., insulating radiation layer 140 is potsherd made of ceramic material, ceramics
Material is preferable insulating materials, and its insulating properties reaches exchange more than 2500V, and the thermal conductivity factor of ceramic material is
29.3W/ (mK), there is preferable heat conductivility), fin 130 can be avoided to be linked as with the internal circuit in lead frame 120
When one, i.e. power device 100 work, fin 130 is not charged, and insulating properties are good, can be directly mounted on heat abstractor, and
Do not limited by use environment, you can used in the environment of moist, high pressure, be applicable to different environment.
It is, of course, understood that the material of fin 130 in above-mentioned, insulating radiation layer 140, the material of encapsulated layer 150
Matter can also be other materials, only need function and effect in reaching above-mentioned, be not limited herein.
Further, in the present embodiment, fin 130 can be connected with insulating radiation layer 140 by high temperature tin cream, insulation
Heat dissipating layer 140 can be connected with lead frame 120 by high temperature tin cream.
In above-mentioned, specifically, high temperature tin cream is the cream formed by solder powder, scaling powder and other additives mixeds
Body.High temperature tin cream has certain viscosity at normal temperatures, can just be bonded at lead frame 120, fin 130, insulating radiation layer 140
Commitment positions, under welding temperature, with the volatilization of solvent and portions additive, by lead frame 120, fin 130, insulation
Heat dissipating layer 140 is welded together to form permanently connected.And high temperature tin cream belongs to the metal of high atomic weight together with lead frame, and it is led
Hot coefficient similar, radiating are on close level.
Further, in the present embodiment, normal temperature tin paste layer can be provided between chip 110 and lead frame 120.
In above-mentioned, specifically, the material of normal temperature tin paste layer is normal temperature tin cream, the conductive energy of normal temperature tin cream, it can incite somebody to action
Chip 110 is electrically connected with lead frame 120, and then lead frame 120 passes through wire either guide pin or pin etc.
It is electrically connected with the other parts (such as circuit board) in electrical equipment.
In above-mentioned, it is to be understood that the power device 100 first dissipates fin 130 and insulation in installation process
Thermosphere 140 is linked together by high temperature tin cream, and insulating radiation layer 140 and lead frame 120 are connected to one by high temperature tin cream
Rise, and then be again bonded in chip 110 on lead frame 120 with normal temperature tin cream, i.e., be provided between chip 110 and lead frame 120
Normal temperature tin paste layer, and then, because the welding temperature of normal temperature tin cream is less than high temperature tin cream, and then by the normal temperature tin cream of chip 110
It is bonded on lead frame 120, lead frame 120, the fin being welded before will not being corrupted to by high temperature tin cream
130th, insulating radiation layer 140.
In above-mentioned, it is necessary to explanation, it is above-mentioned in high temperature tin cream, normal temperature tin cream be with the required welding temperature of tin cream come
Distinguish, such as the fusing point of high temperature tin cream can be 210-227 DEG C, the fusing point of normal temperature tin cream can be 138 DEG C.
The beneficial effect of power device provided by the invention is：It is compared with the prior art, power device of the invention is adopted
Dissipated with insulation is provided with by the mode of chip 110, the molding of lead frame 120 half, and between lead frame 120 and fin 130
Thermosphere 140, and then while the radiating of device and insulating requirements are ensured, and exposed fin 130 is not charged, and can be straight
Connect on heat abstractor, it is highly reliable, and do not limited by use environment, such as moist, high pressure, it is applicable to different
Environment.
Embodiment 2
Fig. 1-Fig. 3 is referred to, present embodiments provides a kind of (PCC) power 200, including radiator 210 and at least one work(
Rate device 100, wherein, as described in example 1 above, power device 100, it includes chip 110, lead frame 120, power device
100 also include the fin 130 under lead frame 120, wherein, insulation is provided between fin 130 and lead frame 120
Heat dissipating layer 140, and encapsulated layer 150 is enclosed with chip 110 and lead frame 120, power device 100 by fin 130 with
The connection of radiator 210 is arranged on radiator 210.
In above-mentioned, power device 100 is by the way of by chip 110, the molding of lead frame 120 half, and lead frame
Insulating radiation layer 140 is provided between 120 and fin 130, and then while the radiating of device and insulating requirements are ensured, and
It is highly reliable and exposed fin 130 is not charged, can be directly mounted on radiator 210, and do not limited by use environment
System, such as moist, high pressure, is applicable to different environment.
In above-mentioned, specifically, because fin 130 is not charged, the difference in functionality on same radiator 210 is prevented
Device between it is conductive mutually the problem of, an at least power device 100 can be mounted directly on radiator 210, when there is super large radiating
, can be according to application environment by the shape of radiator 210 during the application of demand (such as having multiple power devices 100 that there are radiating requirements)
Shape or size are adjusted, and then multiple power devices 100 can be installed on radiator 210, realize superior heat dispersion, full
The demand of the electrical equipment of sufficient super high power.
In above-mentioned, radiator fan installation position 220 can be also provided with the radiator 210, can in radiator fan installation position 220
According to installation radiator fan is actually needed, to improve radiating effect, superior heat dispersion is realized, meets powerful electrical equipment
Demand.
Further, fin 130 is detachably connected with radiator 210, and then can facilitate power device 100 and radiator
200 installation and detachable maintaining etc., specifically, such as fin 130 and the mode connects for screw of radiator 210 or snapping connection
Deng.
The beneficial effect of (PCC) power provided by the invention is：Compared with prior art, in (PCC) power of the present invention,
Insulating radiation layer 140 is provided between lead frame 120 and fin 130, and then is ensureing the radiating of device and insulating requirements
While, and exposed fin 130 is not charged, is applicable to different environment, and at least one power device 100 can
It is arranged on by the connection of fin 130 and radiator 210 on radiator 210, you can multiple power are installed on radiator 210
Device 100 so that overall structure is more compact, can meet the needs of high-power electric appliance.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. power device, including chip and lead frame, it is characterised in that the power device also includes being located under lead frame
The fin at end, insulating radiation layer, and the chip and the lead frame are provided between the fin and the lead frame
Encapsulated layer is enclosed with frame.
2. power device as claimed in claim 1, it is characterised in that the fin and the insulating radiation layer pass through high temperature
Tin cream is connected, and the insulating radiation layer is connected with the lead frame by high temperature tin cream.
3. power device as claimed in claim 1, it is characterised in that normal temperature tin is provided between the chip and the lead frame
Layer of paste.
4. power device as claimed in claim 1, it is characterised in that the fin is metal fin.
5. power device as claimed in claim 1, it is characterised in that the insulating radiation layer is ceramic layer.
6. power device as claimed in claim 1, it is characterised in that the encapsulated layer is epoxy resin layer.
7. (PCC) power, it is characterised in that including radiator and at least one power device as described in claim any one of 1-6
Part, wherein, the power device is arranged on the radiator by the connection of the fin and the radiator.
8. (PCC) power as claimed in claim 7, it is characterised in that the fin is detachably connected with the radiator.
9. (PCC) power as claimed in claim 8, it is characterised in that the fin and the radiator mode connects for screw or
Snap connection.
10. (PCC) power as claimed in claim 7, it is characterised in that the radiator is provided with radiator fan installation position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711091418.8A CN107808858A (en) | 2017-11-08 | 2017-11-08 | Power device and its (PCC) power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711091418.8A CN107808858A (en) | 2017-11-08 | 2017-11-08 | Power device and its (PCC) power |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107808858A true CN107808858A (en) | 2018-03-16 |
Family
ID=61591835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711091418.8A Withdrawn CN107808858A (en) | 2017-11-08 | 2017-11-08 | Power device and its (PCC) power |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107808858A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766947A (en) * | 2018-07-26 | 2018-11-06 | 苏州固锝电子股份有限公司 | Power device with heat sinking function |
| CN110931448A (en) * | 2019-11-22 | 2020-03-27 | 瑞能半导体科技股份有限公司 | Lead frame, semiconductor device, and circuit device |
| CN110970375A (en) * | 2018-09-29 | 2020-04-07 | 珠海格力电器股份有限公司 | Packaging structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080164590A1 (en) * | 2007-01-10 | 2008-07-10 | Diodes, Inc. | Semiconductor power device |
| CN102339818A (en) * | 2010-07-15 | 2012-02-01 | 台达电子工业股份有限公司 | Power module |
| CN207503962U (en) * | 2017-11-08 | 2018-06-15 | 深圳芯能半导体技术有限公司 | Power device and its (PCC) power |
-
2017
- 2017-11-08 CN CN201711091418.8A patent/CN107808858A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080164590A1 (en) * | 2007-01-10 | 2008-07-10 | Diodes, Inc. | Semiconductor power device |
| CN102339818A (en) * | 2010-07-15 | 2012-02-01 | 台达电子工业股份有限公司 | Power module |
| CN207503962U (en) * | 2017-11-08 | 2018-06-15 | 深圳芯能半导体技术有限公司 | Power device and its (PCC) power |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766947A (en) * | 2018-07-26 | 2018-11-06 | 苏州固锝电子股份有限公司 | Power device with heat sinking function |
| CN108766947B (en) * | 2018-07-26 | 2024-01-26 | 苏州固锝电子股份有限公司 | Power device with heat dissipation function |
| CN110970375A (en) * | 2018-09-29 | 2020-04-07 | 珠海格力电器股份有限公司 | Packaging structure and preparation method thereof |
| CN110970375B (en) * | 2018-09-29 | 2024-10-25 | 珠海格力电器股份有限公司 | Packaging structure and preparation method thereof |
| CN110931448A (en) * | 2019-11-22 | 2020-03-27 | 瑞能半导体科技股份有限公司 | Lead frame, semiconductor device, and circuit device |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| WW01 | Invention patent application withdrawn after publication | ||
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Application publication date: 20180316 |