CN218632017U

CN218632017U - Heat dissipation device, circuit board and battery module

Info

Publication number: CN218632017U
Application number: CN202223129314.0U
Authority: CN
Inventors: 张志国; 李�杰
Original assignee: Zhuhai Cosmx Power Co Ltd
Current assignee: Zhuhai Cosmx Power Co Ltd
Priority date: 2022-11-24
Filing date: 2022-11-24
Publication date: 2023-03-14
Anticipated expiration: 2032-11-24

Abstract

The utility model provides a heat dissipation device, a circuit board and a battery module, wherein the heat dissipation device comprises a heat dissipation substrate and an MOS (metal oxide semiconductor) tube, and the heat dissipation substrate comprises a heat transfer surface; at least one MOS tube is arranged on the heat transfer surface, and the surface of each MOS tube is wrapped with a phase change material. The utility model discloses wrap up phase change material on the surface of every MOS pipe, the MOS pipe can be with heat conduction for phase change material, make phase change material take place the phase transition, can absorb the heat that a large amount of MOS pipes produced, the problem of the temperature sharply rising that leads to that generates heat in a large number in MOS pipe short time has been solved, guarantee the MOS pipe under the condition of instantaneous high power, the temperature that makes the MOS pipe maintains here phase transition temperature can not rise, thereby the temperature of MOS pipe has been controlled effectively, the safety work of MOS pipe has been guaranteed, be favorable to prolonging the life of MOS pipe, thereby can protect the battery better.

Description

Heat dissipation device, circuit board and battery module

Technical Field

The utility model relates to an electricity field particularly, relates to a heat abstractor, circuit board and battery module.

Background

With the development of society and the progress of science and technology, people's travel tools are gradually converted into automobiles, and as green energy is advocated in the country in recent years, electric automobiles gradually become more and become the leading position in automobiles, and in the manufacturing process of electric automobiles, core unit motor controllers of electric automobiles are also developing towards high frequency, high power, high integration, miniaturization and the like, inevitably, electronic components (of which MOS tubes are main heating devices) related to the motor controllers generate large energy loss in the working process, especially when the automobiles collide, short circuit and the like occur, short-time large current is formed, the MOS tubes of the motor controllers generate a large amount of heat in a short time, so that the temperature of the electronic components is sharply increased, and if the heat is not dissipated, the components influence the reliability of products due to overheating, and the service life of the products is seriously shortened, and even the products are damaged.

At present, a larger heat sink is usually used or the number of MOS transistors is increased to solve the heat dissipation problem of MOS, but at present, these methods not only increase the cost, but also have poor heat dissipation effect.

SUMMERY OF THE UTILITY MODEL

The utility model discloses aim at solving the current MOS pipe radiating effect not good and the problem that leads to the heat dissipation cost to increase.

In order to solve the above problems, a first aspect of the present invention provides a heat dissipation device, including a heat dissipation substrate and a MOS transistor;

the heat dissipation substrate comprises a heat transfer surface;

at least one MOS tube is arranged on the heat transfer surface, and the surface of each MOS tube is wrapped with a phase change material.

Further, the phase-change material is coated on the surface of the MOS tube after being solidified.

Furthermore, a plurality of MOS tubes are arranged on the heat transfer surface, and the phase-change material is filled in the gap between any two adjacent MOS tubes.

Further, still include the casing, the casing sets up on the heat transfer surface of heat dissipation base plate, the casing is used for the encapsulation MOS pipe with phase change material, phase change material parcel is in the surface of MOS pipe, just phase change material is located the inside of casing.

The phase change material is filled in a gap between any two adjacent first cooling fins, each first cooling fin is perpendicular to the heat transfer surface, one end of each first cooling fin is connected with the shell and inserted into the phase change material, and the other end of at least part of the first cooling fins is attached to the MOS tube.

The air channel is formed by a gap between any two adjacent second cooling fins, each second cooling fin is arranged in parallel with the first cooling fin, and the second cooling fins are positioned on one side surface of the shell, which is far away from the first cooling fins.

Further, the first heat dissipation sheet is a heat conduction metal sheet, and/or the second heat dissipation sheet is a heat conduction metal sheet.

The heat transfer surface is provided with a plurality of first radiating fins, the first radiating fins are arranged in parallel, gaps between any two adjacent first radiating fins form air flow channels, the first radiating fins are arranged on the surface of one side, away from the heat transfer surface, of the shell, and the first radiating fins are fractal fins.

The utility model discloses the second aspect provides a circuit board, including the first aspect heat abstractor.

The utility model discloses the third aspect provides a battery module, including the first aspect heat abstractor.

Heat abstractor, circuit board and battery module, at the surface parcel phase change material of every MOS pipe, the MOS pipe can be with heat conduction for phase change material, make phase change material take place the phase transition, can absorb the heat that a large amount of MOS pipes produced, the problem that the temperature that the MOS pipe short time leads to of generating heat in a large number sharply risees has been solved, guarantee the MOS pipe under the condition of instantaneous high power, the temperature that makes the MOS pipe maintains here phase transition temperature can not rise, thereby the temperature of MOS pipe has been controlled effectively, the safety work of MOS pipe has been guaranteed, be favorable to prolonging the life of MOS pipe, thereby can protect the battery better.

Drawings

Fig. 1 is a first schematic structural diagram of a heat dissipation device provided in an embodiment of the present invention;

fig. 2 is a schematic diagram of a second structure of a heat dissipation apparatus provided in an embodiment of the present invention;

FIG. 3 is a schematic perspective view of FIG. 2;

fig. 4 is a schematic structural view of a third heat dissipation device provided in an embodiment of the present invention;

fig. 5 is a schematic diagram of a fourth structure of a heat dissipation device according to an embodiment of the present invention;

fig. 6 is a schematic structural view of a fifth exemplary embodiment of a heat dissipation device;

fig. 7 is a schematic flow chart of a selective heat dissipation device according to an embodiment of the present invention.

Description of the reference numerals:

100-a heat-dissipating substrate; 200-MOS tube; 300-phase change material; 400-a housing; 500-a first heat sink; 600-a second heat sink; 700-third heat sink.

Detailed Description

The technical solution of the present invention will be described in detail and clearly with reference to the accompanying drawings. In the description of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element to which the description refers must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. Furthermore, in the description of the present invention, "at least one" means one or more unless specifically limited otherwise.

In the description of the present specification, the description of the term "on the basis of the above-described embodiments" means that a specific feature, structure, material or characteristic described in connection with the embodiment or example is included in at least one preferred embodiment or preferred example of the present invention. Throughout this specification, the schematic representations of the terms used above do not necessarily refer to the same implementation or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Referring to fig. 1, in a first aspect, the present embodiment provides a heat dissipation apparatus, which includes a heat dissipation substrate 100 and MOS transistors 200, where the heat dissipation substrate 100 includes a heat transfer surface a, at least one MOS transistor 200 is disposed on the heat transfer surface a, and a surface of each MOS transistor 200 is wrapped with a phase change material 300.

The heat abstractor that provides in this embodiment, surface parcel phase change material at every MOS pipe, the MOS pipe can be with heat conduction for phase change material, make phase change material take place the phase transition, can absorb the heat that a large amount of MOS pipes produced, the problem of the sharp rising of temperature that leads to of having solved MOS pipe short time a large amount of generating heat, guarantee the MOS pipe under the condition of instantaneous high power, the temperature that makes the MOS pipe maintains this phase transition temperature and can not rise, thereby the temperature of MOS pipe has been controlled effectively, the safety work of MOS pipe has been guaranteed, be favorable to prolonging the life of MOS pipe, thereby can protect the battery better.

In this embodiment, the phase transition temperature of the phase change material 300 ranges from 70 ℃ to 90 ℃, the phase change material 300 may be an organic phase change material, the phase change material 300 may also be an inorganic phase change material, and the phase change material 300 may also be an organic phase change material and an inorganic phase change material, wherein the organic phase change material includes but is not limited to one or a combination of several of capric acid-lauric acid, caprylic acid and propyl palmitate, and the inorganic phase change material includes but is not limited to LiClO ₃ 、ZnCl ₂ -3H ₂ O、K ₂ HPO ₃ -6H ₂ O、NaOH-3H ₂ O、NaCrO-10H ₂ O and Na ₂ CrO-10H ₂ O or a combination of several O.

In this embodiment, the heat dissipation substrate 100 may be a PCB, and the MOS transistor 200 and the PCB may be connected by welding.

The phase change material 300 is coated on the surface of the MOS transistor 200 after being cured, and specifically, the phase change material 300 may be coated on the surface of the MOS transistor 200 after being cured by using the phase change property of the phase change material 300, for example: the phase change material 300 can be melted at a high temperature, and then the liquid phase change material 300 is dripped or coated on the surface of the MOS transistor 200 once or for multiple times, the phase change material 300 is wrapped on the surface of the MOS transistor 200 after the liquid phase change material 300 is solidified, or the solid phase change material 300 is packaged firstly, after the liquid phase change material 300 is melted at a high temperature, the MOS transistor 200 is placed in the melted phase change material 300, and the phase change material 300 can be wrapped on the surface of the MOS transistor 200 after the liquid phase change material 300 is placed at a normal temperature.

The coating amount of the phase change material 300 may be set according to the heat dissipation requirement of the MOS transistor 200 under the normal working condition and the heat dissipation requirement under the limit working condition.

In addition to the above embodiments, the plurality of MOS transistors 200 are disposed on the heat transfer surface a, and the phase change material 300 is filled in the gap between any two adjacent MOS transistors 200, so that the heat dissipation effect on the MOS transistors can be enhanced.

With reference to fig. 2 and fig. 3, on the basis of the above embodiment, the heat dissipation device further includes a housing 400, the housing 400 is disposed on the heat transfer surface a of the heat dissipation substrate 100, the housing 400 is used to encapsulate the MOS transistor 200 and the phase change material 300, that is, the MOS transistor 200 and the phase change material 300 are both located inside the housing 400, and the phase change material 300 is wrapped on the surface of the MOS transistor 200. Therefore, the phase change material 300 and the MOS transistor 200 are encapsulated by the case 400, and the structural stability of the phase change material 300 can be ensured.

On the basis of the above embodiments, the housing 400 is a metal housing, which has good thermal conductivity and can enhance the heat dissipation of the MOS transistor 200. In this embodiment, the material of the metal shell is not further limited, and those skilled in the art can select the metal shell according to actual situations, and preferably, the material of the metal shell is copper or aluminum with a higher thermal conductivity.

In this embodiment, the housing 400 and the heat dissipation substrate 100 may be fixedly connected by a connector such as a screw or a pressing plate.

With reference to fig. 4, on the basis of the above embodiment, the heat dissipation device further includes first heat dissipation fins 500, the first heat dissipation fins 500 are in a shape of a sheet, the first heat dissipation fins 500 are located inside the housing 400, the plurality of first heat dissipation fins 500 are arranged in parallel, a phase change material 300 is filled in a gap between any two adjacent first heat dissipation fins 500, each first heat dissipation fin 500 is arranged perpendicular to the heat transfer surface a, one end of each first heat dissipation fin 500 is connected to the housing 400 and is inserted into the phase change material 300, and the other end of at least a part of the first heat dissipation fins 500 abuts against the MOS transistor 200. Therefore, a plurality of first cooling fins 500 are arranged inside the casing 400, the first cooling fins 500 are inserted into the phase change material 300, and at least part of the first cooling fins 500 are connected with the MOS transistor 200 and the casing 400, so that heat on the MOS transistor 200 is conducted to the phase change material 300 and the casing 400, and heat dissipation of the MOS transistor 200 is further enhanced.

With reference to fig. 5, on the basis of the above embodiment, the heat dissipation device further includes a second heat dissipation fin 600, the second heat dissipation fin 600 is in a shape of a sheet, the second heat dissipation fin 600 is located outside the housing 400, the plurality of second heat dissipation fins 600 are arranged in parallel, an air flow channel is formed in a gap between any two adjacent second heat dissipation fins 600, each second heat dissipation fin 600 is arranged in parallel with the first heat dissipation fin 500, and the second heat dissipation fin 600 is located on a side surface of the housing 400 away from the first heat dissipation fin 500. Therefore, the plurality of second heat dissipation fins 600 are disposed outside the housing 400, and the air channel is formed by the gaps between the plurality of second heat dissipation fins 600, which is beneficial to dissipating the heat inside the housing 400 to the air, so that the heat dissipation of the MOS transistor 200 can be further enhanced.

In this embodiment, the gap between any two adjacent first cooling fins 500 is not further limited, and those skilled in the art can set the gap according to actual situations; the gap between any adjacent two second fins 600 is not further limited, and may be set by those skilled in the art according to actual situations.

The first heat sink 500 is a heat conducting metal sheet, and the second heat sink 600 is a heat conducting metal sheet, and the material of the heat conducting metal sheet is not further limited in this embodiment, and those skilled in the art can select the heat conducting metal sheet according to actual situations.

With reference to fig. 6, on the basis of the above embodiment, the heat dissipation device further includes a third heat dissipation fin 700, the third heat dissipation fin 700 is a fractal fin, the third heat dissipation fin 700 is located outside the housing 400, the plurality of third heat dissipation fins 700 are arranged in parallel, a gap between any two adjacent third heat dissipation fins 700 forms an air flow channel, and the third heat dissipation fin 700 is located on a side surface of the housing 400 away from the heat transfer surface a.

The third heat sink 700 and the second heat sink 600 are both located outside the housing 400, but the third heat sink 700 is a fractal fin, the second heat sink 600 is a sheet, the fractal fin is a stepwise branched structure, and compared with the sheet structure, the plurality of branched structures can further reduce the heat dissipation thermal resistance on the surface of the heat sink, thereby further enhancing the heat dissipation of the MOS transistor 200.

The third heat sink 700 may be integrally formed, the third heat sink 700 is a heat conducting metal sheet, and the material of the heat conducting metal sheet is not further limited in this embodiment, and those skilled in the art can select the heat conducting metal sheet according to the actual situation, and preferably, the material of the heat conducting metal sheet is copper or aluminum with a higher heat conductivity coefficient.

After the phase change material 300 and the MOS tube 200 are packaged by using the casing 400, the third heat sink 700 with the fractal fin may be used only outside the casing 400, the first heat sink 500 may be used inside the casing 400 and the second heat sink 600 may be used outside the casing 400 at the same time, the first heat sink 500 may be used only inside the casing 400, and the selection may be specifically performed according to the heat dissipation requirement of the MOS tube 200 under the normal working condition and the heat dissipation requirement under the limit working condition.

In this embodiment, before selecting the specific structure of the heat dissipation device, the heat consumption under the normal operating condition and the heat consumption under the extreme operating condition of the MOS transistor 200 need to be evaluated first, and the specific structure of the heat dissipation device is selected according to the heat consumption under the normal operating condition and the heat consumption under the extreme operating condition of the MOS transistor 200.

The use of the heat sink in this embodiment will be described with reference to fig. 7.

When the MOS transistor 200 has a requirement of a limit condition, that is, there is a heat dissipation requirement that an instantaneous heat dissipation amount Q exceeds 10J (an algorithm is heat dissipation time), that is, the phase change material 300 needs to be coated on the surface of the MOS transistor 200, the usage amount m of the phase change material 300 may be calculated according to the heat dissipation amount of the limit condition, that is, m = Q/L, and L is latent heat of phase change of the phase change material 300. When the heat consumption of the MOS transistor 200 under the normal working condition is lower than 0.3W, the phase change material 300 and the MOS transistor 200 do not need to be packaged by using the casing 400, and a heat sink does not need to be used; when the heat consumption of the MOS transistor 200 under the normal working condition is higher than 0.3W, the phase change material 300 and the MOS transistor 200 are packaged by using the casing 400, and the structure of the heat sink is selected according to the heat consumption: (1) If the heat loss is low, the first heat dissipation fins 500 may be used only inside the case 400, or the third heat dissipation fins 700 of fractal fins may be used only outside the case 400; (2) If the heat consumption ratio (1) is high, the first heat sink 500 may be used inside the case 400 and the second heat sink 600 may be used outside the case 400 at the same time; (3) If the heat consumption ratio (2) is high, the first heat sink 500 may be used inside the case 400 and the third heat sink 700 may be used outside the case 400 at the same time.

Note that the use of the fins in fig. 7 includes the use of any one of first fin 500, second fin 600, and third fin 700, and also includes the use of first fin 500, second fin 600, and first fin 500 and third fin 700, and those skilled in the art can select the fin according to the heat loss.

The heat dissipation device of the embodiment can solve the problem of rapid temperature rise caused by a large amount of heat generated by the MOS transistor 200 in a short time, and ensure that the temperature of the MOS transistor 200 is maintained at the phase-change temperature and cannot rise under the condition of instantaneous high power of the MOS transistor 200, thereby effectively controlling the temperature of the MOS transistor 200 and ensuring the safe operation of the MOS transistor 200; in addition, this embodiment can also select heat abstractor's specific structure according to MOS pipe 200's conventional operating mode heat loss and extreme operating mode heat loss to can realize the high-efficient thermal management of MOS pipe 200 under the different operating modes, be favorable to promoting the stability of MOS pipe 200 performance under the extreme condition.

A second aspect of the present embodiment provides a circuit board including the heat dissipation device shown in the first aspect. Compared with the prior art, the technical effect of the circuit board provided by the embodiment of the application is the same as that of the heat dissipation device provided by the first aspect, and the description is omitted here.

A third aspect of the present embodiment provides a battery module including the heat dissipation device shown in the first aspect. Compared with the prior art, the technical effect of the battery module provided by the embodiment of the application is the same as that of the heat dissipation device provided by the first aspect, and the description is omitted here.

Although the present disclosure has been described above, the scope of the present disclosure is not limited thereto. Various changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the present disclosure, and these changes and modifications are intended to fall within the scope of the present disclosure.

Claims

1. A heat dissipation device is characterized by comprising a heat dissipation substrate and MOS tubes;

the heat dissipation substrate comprises a heat transfer surface;

2. The heat dissipation device of claim 1, wherein the phase change material is solidified to wrap the surface of the MOS transistor.

3. The heat dissipation device as claimed in claim 1, wherein a plurality of the MOS transistors are disposed on the heat transfer surface, and a gap between any two adjacent MOS transistors is filled with the phase change material.

4. The heat dissipation device as claimed in claim 1, further comprising a casing disposed on the heat transfer surface of the heat dissipation substrate, wherein the casing is configured to encapsulate the MOS transistor and the phase change material, the phase change material is wrapped on the surface of the MOS transistor, and the phase change material is located inside the casing.

5. The heat dissipating device of claim 4, further comprising a first heat dissipating fin located inside the housing, wherein a plurality of the first heat dissipating fins are arranged in parallel, a space between any two adjacent first heat dissipating fins is filled with the phase change material, each of the first heat dissipating fins is arranged perpendicular to the heat transfer surface, one end of each of the first heat dissipating fins is connected to the housing and inserted into the phase change material, and at least a part of the other end of each of the first heat dissipating fins abuts against the MOS transistor.

6. The heat dissipating device of claim 5, further comprising a second heat dissipating fin located outside the housing, wherein a plurality of the second heat dissipating fins are arranged in parallel, and wherein a gap between any adjacent two of the second heat dissipating fins forms an air flow channel, wherein each of the second heat dissipating fins is arranged in parallel with the first heat dissipating fin, and wherein the second heat dissipating fin is located on a side surface of the housing facing away from the first heat dissipating fin.

7. The heat dissipating device of claim 6, wherein the first heat sink is a thermally conductive metal sheet and/or the second heat sink is a thermally conductive metal sheet.

8. The heat dissipating device of claim 4, further comprising a third heat dissipating fin located outside the housing, wherein a plurality of the third heat dissipating fins are arranged in parallel, a gap between any two adjacent third heat dissipating fins forms an air flow channel, the third heat dissipating fin is located on a side surface of the housing facing away from the heat transfer surface, and the third heat dissipating fin is a fractal fin.

9. A circuit board comprising the heat dissipating device of any one of claims 1 to 8.

10. A battery module comprising the heat dissipating device according to any one of claims 1 to 8.