CN107805841A - A kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator - Google Patents
A kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator Download PDFInfo
- Publication number
- CN107805841A CN107805841A CN201711260512.1A CN201711260512A CN107805841A CN 107805841 A CN107805841 A CN 107805841A CN 201711260512 A CN201711260512 A CN 201711260512A CN 107805841 A CN107805841 A CN 107805841A
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- Prior art keywords
- warming plate
- blocks
- attemperator
- framework
- plate
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention is a kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator, including DS blocks, backplate framework, it is incubated plate frame body, bottom attemperator and support column, the backplate framework is arranged on the DS blocks, the backplate framework is arranged on inside the insulation plate frame body, the bottom attemperator is arranged on the DS blocks center bottom, the insulation plate frame body is made up of upper warming plate and side warming plate, the upper warming plate both ends are connected with side warming plate upper end respectively, and leave gap, the side warming plate lower end is fixed on the bottom warming plate notch that DS blocks bottom is provided with, the bottom warming plate is provided with through hole with the support post holes corresponding position that the angle of DS blocks bottom four is provided with, the support column is fixed in the support post holes that DS blocks bottom is provided with through through hole；The present invention is simple in construction, enables to crystal growing stage, and germ nucleus radiating reduces, and improves solid liquid interface convexity, improves crystal mass.
Description
Technical field
The present invention relates to photovoltaic apparatus ingot casting technology field, specifically a kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks
Bottom attemperator.
Background technology
Traditional GT ingot furnaces, by the way of the insulation of lifting side so that heat flows out from side lower opening, is crystal growth
Thermograde is provided.
Existing most G7 ingot furnaces, in addition to using traditional lifting side preserving heat and radiating heat mode, bottom heat radiation is added again,
In crystal growing stage, it is incubated by opening bottom, in silicon ingot bottom generation center area of dissipation, heat is shed from bottom, and this thermal field is led
Cause bottom centre's radiating comparatively fast, central crystal growth rate is larger, and long brilliant solid liquid interface center crown is larger, easily causes impurity cluster
It is poly-, influence utilization rate of silicon ingot and cell piece electricity conversion.
The content of the invention
The technical problems to be solved by the invention are the shortcomings that overcoming prior art, there is provided a kind of controllable G7 polysilicons
Ingot furnace DS blocks bottom attemperator so that crystal growing stage, germ nucleus radiating reduce, and improve solid liquid interface convexity, improve crystal
Quality.
The present invention solve above technical problem technical scheme be：A kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom is provided
Attemperator, including DS blocks, backplate framework, insulation plate frame body, bottom attemperator and support column, the backplate framework are arranged on
On the DS blocks, the backplate framework is arranged on inside the insulation plate frame body, and the bottom attemperator is arranged on the DS
Block center bottom, it is described insulation plate frame body be made up of upper warming plate and 2 side warming plates, the upper warming plate both ends respectively with side
Warming plate upper end is connected, and leaves gap, and the side warming plate lower end is fixed on the bottom warming plate notch that DS blocks bottom is provided with,
The notch matches with side warming plate lower end structure, and the bottom warming plate is corresponding with the support post holes that the angle of DS blocks bottom four is provided with
Opening position is provided with through hole, and the support column is fixed in the support post holes that DS blocks bottom is provided with through through hole, in backplate framework
Upper guard board and upper warming plate between be provided with upper heater, side guard plate in the backplate framework and the insulation of corresponding side
Side heater is provided between plate, bottom heater is provided between the DS blocks and bottom warming plate；The bottom attemperator includes
CC plates, the soft felt of insulation and connecting screw, the CC plates are fixed on by the connecting screw through the screw that its four angles are provided with
DS blocks bottom, insulation material is provided between the CC plates and DS blocks.
The further restriction technical scheme of the present invention：
Foregoing insulation material is the soft felt of insulation or thermal-insulation hard felt.
Foregoing CC plates bottom is provided with electrode mating holes.
Opening slot is provided with the middle part of foregoing bottom warming plate.
Two foregoing side bottoms are respectively equipped with bottom movement warming plate, and bottom movement warming plate is provided with chute hole, and support column
It is arranged in chute hole, bottom movement warming plate is horizontally slipped by chute hole with support column to be connected.
The beneficial effects of the invention are as follows：The present invention is simple in construction, and opening slot is provided with the middle part of the warming plate of bottom, can be easy to bottom
The radiating in portion, movement warming plate in bottom is provided with bottom warming plate bottom, bottom movement warming plate is provided with chute hole, and passes through cunning
Slotted eye horizontally slips with support column and is connected, and can effectively carry out closure control heat dissipating state, and the present invention can effectively control thermal field
Thermograde, reduce crystal growing stage solid liquid interface convexity；Improve impurity transmission, reduce shade, improve utilization rate of silicon ingot；Long brilliant rank
Section thermal loss is reduced, and has saved the energy.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the present invention；
Fig. 2 is the attemperator polycrystalline substance schematic diagram of the present invention；
Fig. 3 is the attemperator structural representation of the present invention；
Fig. 4 is the bottom insulating plate structure schematic diagram of the present invention；
Fig. 5 is the bottom movement insulating plate structure schematic diagram of the present invention.
Embodiment
Embodiment 1
The present embodiment provides a kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator, structure as Figure 1-5, including DS
Block 11, backplate framework 1, insulation plate frame body, bottom attemperator 2 and support column 10, backplate framework 1 are arranged on DS blocks 11, shield
Plate frame body 1 is arranged on inside insulation plate frame body, and bottom attemperator 2 is arranged on the center bottom of DS blocks 11, and insulation plate frame body is by upper
Warming plate 3 and 2 side warming plates 4 are formed, and the upper both ends of warming plate 3 are connected with the upper end of side warming plate 4 respectively, and leave gap, side
The lower end of warming plate 4 is fixed on the notch of bottom warming plate 7 that the bottom of DS blocks 11 is provided with, the notch and side warming plate lower end structure kissing
Close, bottom warming plate is provided with through hole with the support post holes corresponding position that the angle of DS blocks bottom four is provided with, and support column 10 passes through through hole
It is fixed in the support post holes 15 that the bottom of DS blocks 11 is provided with, the middle part of bottom warming plate 7 is provided with opening slot 17, the both sides of warming plate 7 bottom of at
Bottom is respectively equipped with bottom movement warming plate 9, and bottom movement warming plate 9 is provided with chute hole 18, and support column 10 is arranged on chute hole
In 18, bottom movement warming plate 9 is horizontally slipped with support column 10 by chute hole 18 and is connected, upper guard board in backplate framework and upper
Upper heater 5 is provided between warming plate, is added between the side guard plate and corresponding side warming plate in backplate framework provided with side
Hot device 6, bottom heater 8 is provided between DS blocks 11 and bottom warming plate 7；Bottom attemperator 2 includes CC plates 12, insulation material 16
With connecting screw 13, CC plates 12 are fixed on the bottom of DS blocks 11 by the connecting screw 13 through the screw that its four angles are provided with,
The bottom of CC plates 12 is provided with electrode mating holes 14, and insulation material 16 is provided between CC plates 12 and DS blocks 11, and insulation material 16 is guarantor
The soft felt of temperature, its thickness is 1.5cm.
The present embodiment is simple in construction, and opening slot is provided with the middle part of the warming plate of bottom, can be easy to the radiating of bottom, is incubated the bottom of at
Plate bottom is provided with bottom movement warming plate, and bottom movement warming plate is provided with chute hole, and passes through chute hole and support column or so
It is slidably connected, can effectively carries out closure control heat dissipating state, the present invention can effectively controls temperature of thermal field gradient, reduce long brilliant
Stage solid liquid interface convexity；Improve impurity transmission, reduce shade, improve utilization rate of silicon ingot；Crystal growing stage thermal loss is reduced, section
The about energy.
In addition to the implementation, the present invention can also have other embodiment.It is all to use equivalent substitution or equivalent transformation shape
Into technical scheme, all fall within the protection domains of application claims.
Claims (5)
1. a kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator, including DS blocks（11）, backplate framework（1）, warming plate
Framework, bottom attemperator（2）And support column（10）, the backplate framework（1）Installed in the DS blocks（11）On, the backplate
Framework（1）It is arranged on inside the insulation plate frame body, the bottom attemperator（2）Installed in the DS blocks（11）In bottom
Portion, it is characterised in that：The insulation plate frame body is by upper warming plate（3）With side warming plate（4）Composition, the upper warming plate（3）Two
End respectively with side warming plate（4）Upper end connects, and leaves gap, the side warming plate（4）Lower end is fixed on DS blocks（11）Bottom
The bottom warming plate being provided with（7）On notch, the notch matches with side warming plate lower end structure, the bottom warming plate and DS blocks bottom
The support post holes corresponding position that four angles are provided with is provided with through hole, the support column（10）DS blocks are fixed on through through hole（11）Bottom
The support post holes that portion is provided with（15）It is interior, it is provided with upper heater between the upper guard board and upper warming plate in backplate framework（5）, institute
State and side heater is provided between the side guard plate in backplate framework and corresponding side warming plate（6）, in the DS blocks（11）With
Bottom warming plate（7）Between be provided with bottom heater（8）；The bottom attemperator（2）Including CC plates（12）, insulation material（16）With
Connecting screw（13）, the CC plates（12）Pass through the connecting screw（13）The screw being provided with through its four angles is fixed on DS blocks
（11）Bottom, in the CC plates（12）With DS blocks（11）Between be provided with insulation material（16）.
2. controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator according to claim 1, its feature are：The guarantor
Adiabator（16）It is 1-2cm to be incubated soft felt or thermal-insulation hard felt, its thickness.
3. controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator according to claim 1, its feature are：The CC
Plate（12）Bottom is provided with electrode mating holes（14）.
4. controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator according to claim 1, its feature are：The bottom
Warming plate（7）Middle part is provided with opening slot（17）.
5. controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator according to claim 1, its feature are：The bottom
Warming plate（7）Two side bottoms are respectively equipped with bottom movement warming plate（9）, warming plate is moved at the bottom（9）It is provided with chute hole（18）,
And the support column（10）It is arranged on chute hole（18）Interior, warming plate is moved at the bottom（9）Pass through chute hole（18）With support column
（10）Horizontally slip connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711260512.1A CN107805841A (en) | 2017-12-04 | 2017-12-04 | A kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711260512.1A CN107805841A (en) | 2017-12-04 | 2017-12-04 | A kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator |
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| Publication Number | Publication Date |
|---|---|
| CN107805841A true CN107805841A (en) | 2018-03-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711260512.1A Pending CN107805841A (en) | 2017-12-04 | 2017-12-04 | A kind of controllable G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator |
Country Status (1)
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| CN (1) | CN107805841A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110453282A (en) * | 2019-09-23 | 2019-11-15 | 浙江晶科能源有限公司 | A kind of polycrystalline silicon ingot or purifying furnace |
| CN110453282B (en) * | 2019-09-23 | 2024-05-31 | 浙江晶科能源有限公司 | Polycrystalline silicon ingot furnace |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001048696A (en) * | 1999-08-06 | 2001-02-20 | Mitsubishi Materials Corp | Crystalline silicon production device |
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
| CN102162125A (en) * | 2011-05-12 | 2011-08-24 | 石金精密科技（深圳）有限公司 | Thermal field structure of polysilicon ingot casting furnace |
| WO2012139362A1 (en) * | 2011-04-11 | 2012-10-18 | 上海普罗新能源有限公司 | Polysilicon ingot casting furnace and polysilicon ingot casting method |
| CN207552493U (en) * | 2017-12-04 | 2018-06-29 | 江苏高照新能源发展有限公司 | A kind of G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator |
-
2017
- 2017-12-04 CN CN201711260512.1A patent/CN107805841A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001048696A (en) * | 1999-08-06 | 2001-02-20 | Mitsubishi Materials Corp | Crystalline silicon production device |
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
| WO2012139362A1 (en) * | 2011-04-11 | 2012-10-18 | 上海普罗新能源有限公司 | Polysilicon ingot casting furnace and polysilicon ingot casting method |
| CN102162125A (en) * | 2011-05-12 | 2011-08-24 | 石金精密科技（深圳）有限公司 | Thermal field structure of polysilicon ingot casting furnace |
| CN207552493U (en) * | 2017-12-04 | 2018-06-29 | 江苏高照新能源发展有限公司 | A kind of G7 polycrystalline silicon ingot or purifying furnaces DS blocks bottom attemperator |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110453282A (en) * | 2019-09-23 | 2019-11-15 | 浙江晶科能源有限公司 | A kind of polycrystalline silicon ingot or purifying furnace |
| CN110453282B (en) * | 2019-09-23 | 2024-05-31 | 浙江晶科能源有限公司 | Polycrystalline silicon ingot furnace |
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| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 968 GANGLONG Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant before: JIANGSU GAOZHAO NEW ENERGY DEVELOPMENT Co.,Ltd. |
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| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |