CN107805734A - A kind of copper alloy for electronic material and preparation method thereof - Google Patents
A kind of copper alloy for electronic material and preparation method thereof Download PDFInfo
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- CN107805734A CN107805734A CN201711333595.2A CN201711333595A CN107805734A CN 107805734 A CN107805734 A CN 107805734A CN 201711333595 A CN201711333595 A CN 201711333595A CN 107805734 A CN107805734 A CN 107805734A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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Abstract
The invention provides a kind of copper alloy for electronic material and preparation method thereof, consist of the following composition：0.06 0.04 0.08wt% of 0.09wt%, Mo of 0.9wt%, Cr of Ni 0.5, Ti0.3 0.7wt%, 0.03 0.2 0.6wt% of 0.09wt%, Ag of 0.1wt%, B of W 0.05, Sm0.01 0.05wt%, Gd 0.01 0.05wt%, surplus Cu.The present invention each interaction between component, influences each other using Ni, Cr, Mo, Ti, W, B, Ag, Sm, Gd and Cu as main component, improves the intensity and conductive capability of the copper alloy for electronic material of preparation.Test result indicates that the tensile strength of copper alloy for electronic material prepared by the present invention is 860MPa, electrical conductivity 68%IACS.
Description
Technical field
The present invention relates to copper alloy technical field, more particularly to a kind of copper alloy for electronic material and preparation method thereof.
Background technology
Electronic material refers to the material used in electronic technology and microelectric technique, including dielectric material, semiconductor material
Material, piezoelectricity and ferroelectric material, conducting metal and its alloy material, magnetic material, photoelectron material and other associated materials.Electricity
Sub- material is the material base of modern electronics industry and scientific technological advance, while is that technology-intensive type is learned in sciemtifec and technical sphere again
Section.
For the copper alloy for electronic material for balancing performances such as lead frame, terminal, connectors, as product
Basic performance, it is desirable to high intensity and excellent electric conductivity or thermal conductivity have both.
In the prior art, copper alloy and preparation method thereof has been obtained for widely reporting, for example, Application No.
201180023685.6 Chinese patent literature reports a kind of manufacture of electronic device copper alloy, electronic device copper alloy
Method and electronic device copper alloy stocking.The present invention electronic device copper alloy with the atom % of more than 2.6 atom % 9.8 with
Under scope include Mg, and Al is included with below the atom % of more than 0.1 atom % 20 scope, remainder be actually Cu and
Inevitable impurity.The Chinese patent literature of Application No. 200980111781.9 reports a kind of electric/electronic device and closed with copper
Golden material and electrical/electronic part, copper alloy for electrical/electronic device material contain more than 3.3 mass % below 5.0 mass %
Ni, and Si content in terms of Ni and Si mass ratio (Ni/Si) in the range of 2.8-3.8, and contain 0.01-0.2 mass %
Mg, below 0.05-1.5% Sn, 0.2-1.5 mass % Zn, remainder is made up of Cu and inevitable impurity, its
In, when the test film to thickness t=0.20mm, width w=2.0mm has carried out radius of curvature R=0.1mm 90 ° of W bendings,
Do not crack；Electrical/electronic part is formed by processing copper alloy for electrical/electronic device material.
It is considered as desirable by the inventor to the intensity and electric conductivity of the copper alloy of above-mentioned report are up for further improving.
The content of the invention
Present invention solves the technical problem that being to provide a kind of copper alloy for electronic material and preparation method thereof, have good
Intensity and conductive capability.
In view of this, the invention provides a kind of copper alloy for electronic material, consist of the following composition：Ni 0.5-
0.9wt%, Cr 0.06-0.09wt%, Mo 0.04-0.08wt%, Ti 0.3-0.7wt%, W 0.05-0.1wt%, B
0.03-0.09wt%, Ag 0.2-0.6wt%, Sm 0.01-0.05wt%, Gd 0.01-0.05wt%, surplus Cu.
Preferably, Ni 0.5-0.7wt%.
Preferably, Cr 0.07-0.09wt%.
Preferably, Mo 0.04-0.06wt%.
Preferably, Ti 0.5-0.7wt%.
Preferably, W 0.05-0.08wt%.
Preferably, Ag 0.2-0.5wt%.
Preferably, Sm 0.01-0.03wt%.
Preferably, Gd 0.01-0.03wt%.
Accordingly, the present invention also provides a kind of preparation method of the copper alloy for electronic material described in above-mentioned technical proposal,
Comprise the following steps：According to the composition of copper alloy, using high frequency melting furnace, alloying element is melted, with 20 DEG C/sec of cooling speed
Degree casts the alloy, and hot forging, deflection 60% are carried out at 800 DEG C；It is small that 3 are incubated at 500 DEG C to the copper alloy after hot forging
When, then carry out the cold rolling that deflection is 55%；6 hours are incubated at 380 DEG C, then carries out the cold rolling that deflection is 60%；
4 hours are incubated at 200 DEG C and carries out stress relief annealing, obtains copper alloy for electronic material.
The present invention provides a kind of copper alloy for electronic material and preparation method thereof, consists of the following composition：Ni 0.5-
0.9wt%, Cr 0.06-0.09wt%, Mo 0.04-0.08wt%, Ti 0.3-0.7wt%, W 0.05-0.1wt%, B
0.03-0.09wt%, Ag 0.2-0.6wt%, Sm 0.01-0.05wt%, Gd 0.01-0.05wt%, surplus Cu.With showing
There is technology to compare, the present invention is using Ni, Cr, Mo, Ti, W, B, Ag, Sm, Gd and Cu as main component, each interaction between component, phase
Mutually influence, improve the intensity and conductive capability of the copper alloy for electronic material of preparation.Test result indicates that prepared by the present invention
The tensile strength of copper alloy for electronic material is 860MPa, electrical conductivity 68%IACS.
Embodiment
For a further understanding of the present invention, the preferred embodiment of the invention is described with reference to embodiment, still
It should be appreciated that these descriptions are simply further explanation the features and advantages of the present invention, rather than to the claims in the present invention
Limitation.
The embodiment of the invention discloses a kind of copper alloy for electronic material, consist of the following composition：Ni 0.5-0.9wt%,
Cr 0.06-0.09wt%, Mo 0.04-0.08wt%, Ti 0.3-0.7wt%, W 0.05-0.1wt%, B 0.03-
0.09wt%, Ag 0.2-0.6wt%, Sm 0.01-0.05wt%, Gd 0.01-0.05wt%, surplus Cu.
Preferably, Ni 0.5-0.7wt%, Cr 0.07-0.09wt%, Mo 0.04-0.06wt%, Ti 0.5-
0.7wt%, W 0.05-0.08wt%, Ag 0.2-0.5wt%, Sm 0.01-0.03wt%, Gd 0.01-0.03wt%.
Accordingly, the present invention also provides a kind of preparation method of the copper alloy for electronic material described in above-mentioned technical proposal,
Comprise the following steps：According to the composition of copper alloy, using high frequency melting furnace, alloying element is melted, with 20 DEG C/sec of cooling speed
Degree casts the alloy, and hot forging, deflection 60% are carried out at 800 DEG C；It is small that 3 are incubated at 500 DEG C to the copper alloy after hot forging
When, then carry out the cold rolling that deflection is 55%；6 hours are incubated at 380 DEG C, then carries out the cold rolling that deflection is 60%；
4 hours are incubated at 200 DEG C and carries out stress relief annealing, obtains copper alloy for electronic material.
From above scheme as can be seen that the present invention is using Ni, Cr, Mo, Ti, W, B, Ag, Sm, Gd and Cu as main component, respectively
Individual interaction between component, influence each other, improve the intensity and conductive capability of the copper alloy for electronic material of preparation.Experimental result
Show, the tensile strength of copper alloy for electronic material prepared by the present invention is 860MPa, electrical conductivity 68%IACS.
For a further understanding of the present invention, technical scheme provided by the invention is carried out specifically with reference to embodiment
Bright, protection scope of the present invention is not limited by the following examples.
The raw material that the embodiment of the present invention uses is purchased in market.
Embodiment 1
The composition of copper alloy for electronic material is as follows：
Ni 0.5wt%, Cr 0.09wt%, Mo 0.04wt%, Ti 0.7wt%, W 0.05wt%, B 0.03wt%,
Ag 0.6wt%, Sm 0.01wt%, Gd 0.05wt%, surplus Cu.
According to the composition of copper alloy, using high frequency melting furnace, alloying element is melted, cast with 20 DEG C/sec of cooling velocity
The alloy is made, hot forging, deflection 60% are carried out at 800 DEG C；
3 hours are incubated at 500 DEG C to the copper alloy after hot forging, then carries out the cold rolling that deflection is 55%；
Then 6 hours are incubated at 380 DEG C, then carry out the cold rolling that deflection is 60%；
4 hours are incubated at 200 DEG C and carries out stress relief annealing, obtains copper alloy for electronic material.
The performance of copper alloy for electronic material manufactured in the present embodiment is detected, the tensile strength of copper alloy is
860MPa, electrical conductivity 68%IACS.
Embodiment 2
The composition of copper alloy for electronic material is as follows：
Ni 0.9wt%, Cr 0.06wt%, Mo 0.08wt%, Ti 0.3wt%, W 0.1wt%, B 0.03wt%, Ag
0.2wt%, Sm 0.05wt%, Gd 0.01wt%, surplus Cu.
According to the composition of copper alloy, using high frequency melting furnace, alloying element is melted, cast with 20 DEG C/sec of cooling velocity
The alloy is made, hot forging, deflection 60% are carried out at 800 DEG C；
3 hours are incubated at 500 DEG C to the copper alloy after hot forging, then carries out the cold rolling that deflection is 55%；
Then 6 hours are incubated at 380 DEG C, then carry out the cold rolling that deflection is 60%；
4 hours are incubated at 200 DEG C and carries out stress relief annealing, obtains copper alloy for electronic material.
The performance of copper alloy for electronic material manufactured in the present embodiment is detected, the tensile strength of copper alloy is
855MPa, electrical conductivity 66%IACS.
Embodiment 3
The composition of copper alloy for electronic material is as follows：
Ni 0.9wt%, Cr 0.09wt%, Mo 0.08wt%, Ti 0.3wt%, W 0.05wt%, B 0.03wt%,
Ag 0.6wt%, Sm 0.05wt%, Gd 0.01wt%, surplus Cu.
According to the composition of copper alloy, using high frequency melting furnace, alloying element is melted, cast with 20 DEG C/sec of cooling velocity
The alloy is made, hot forging, deflection 60% are carried out at 800 DEG C；
3 hours are incubated at 500 DEG C to the copper alloy after hot forging, then carries out the cold rolling that deflection is 55%；
Then 6 hours are incubated at 380 DEG C, then carry out the cold rolling that deflection is 60%；
4 hours are incubated at 200 DEG C and carries out stress relief annealing, obtains copper alloy for electronic material.
The performance of copper alloy for electronic material manufactured in the present embodiment is detected, the tensile strength of copper alloy is
858MPa, electrical conductivity 67%IACS.
Embodiment 4
The composition of copper alloy for electronic material is as follows：
Ni 0.7wt%, Cr 0.07wt%, Mo 0.06wt%, Ti 0.5wt%, W 0.07wt%, B 0.05wt%,
Ag 0.4wt%, Sm 0.03wt%, Gd 0.03wt%, surplus Cu.
According to the composition of copper alloy, using high frequency melting furnace, alloying element is melted, cast with 20 DEG C/sec of cooling velocity
The alloy is made, hot forging, deflection 60% are carried out at 800 DEG C；
3 hours are incubated at 500 DEG C to the copper alloy after hot forging, then carries out the cold rolling that deflection is 55%；
Then 6 hours are incubated at 380 DEG C, then carry out the cold rolling that deflection is 60%；
4 hours are incubated at 200 DEG C and carries out stress relief annealing, obtains copper alloy for electronic material.
The performance of copper alloy for electronic material manufactured in the present embodiment is detected, the tensile strength of copper alloy is
859MPa, electrical conductivity 68%IACS.
Embodiment 5
The composition of copper alloy for electronic material is as follows：
Ni 0.8wt%, Cr 0.06wt%, Mo 0.07wt%, Ti 0.4wt%, W 0.06wt%, B 0.08wt%,
Ag 0.3wt%, Sm 0.03wt%, Gd 0.02wt%, surplus Cu.
According to the composition of copper alloy, using high frequency melting furnace, alloying element is melted, cast with 20 DEG C/sec of cooling velocity
The alloy is made, hot forging, deflection 60% are carried out at 800 DEG C；
3 hours are incubated at 500 DEG C to the copper alloy after hot forging, then carries out the cold rolling that deflection is 55%；
Then 6 hours are incubated at 380 DEG C, then carry out the cold rolling that deflection is 60%；
4 hours are incubated at 200 DEG C and carries out stress relief annealing, obtains copper alloy for electronic material.
The performance of copper alloy for electronic material manufactured in the present embodiment is detected, the tensile strength of copper alloy is
857MPa, electrical conductivity 67%IACS.
The explanation of above example is only intended to help the method and its core concept for understanding the present invention.It should be pointed out that pair
For those skilled in the art, under the premise without departing from the principles of the invention, the present invention can also be carried out
Some improvement and modification, these are improved and modification is also fallen into the protection domain of the claims in the present invention.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (10)
1. a kind of copper alloy for electronic material, it is characterised in that consist of the following composition：
Ni 0.5-0.9wt%, Cr 0.06-0.09wt%, Mo 0.04-0.08wt%, Ti 0.3-0.7wt%, W 0.05-
0.1wt%, B 0.03-0.09wt%, Ag 0.2-0.6wt%, Sm 0.01-0.05wt%, Gd 0.01-0.05wt%, surplus
For Cu.
2. copper alloy for electronic material according to claim 1, it is characterised in that Ni 0.5-0.7wt%.
3. copper alloy for electronic material according to claim 1, it is characterised in that Cr 0.07-0.09wt%.
4. copper alloy for electronic material according to claim 1, it is characterised in that Mo 0.04-0.06wt%.
5. copper alloy for electronic material according to claim 1, it is characterised in that Ti 0.5-0.7wt%.
6. copper alloy for electronic material according to claim 1, it is characterised in that W 0.05-0.08wt%.
7. copper alloy for electronic material according to claim 1, it is characterised in that Ag 0.2-0.5wt%.
8. copper alloy for electronic material according to claim 1, it is characterised in that Sm 0.01-0.03wt%.
9. copper alloy for electronic material according to claim 1, it is characterised in that Gd 0.01-0.03wt%.
A kind of 10. preparation method of the copper alloy for electronic material described in claim 1-9 any one, it is characterised in that bag
Include following steps：
According to the composition of copper alloy, using high frequency melting furnace, alloying element is melted, should with 20 DEG C/sec of cooling velocity casting
Alloy, hot forging, deflection 60% are carried out at 800 DEG C；
3 hours are incubated at 500 DEG C to the copper alloy after hot forging, then carries out the cold rolling that deflection is 55%；
6 hours are incubated at 380 DEG C, then carries out the cold rolling that deflection is 60%；
4 hours are incubated at 200 DEG C and carries out stress relief annealing, obtains copper alloy for electronic material.
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| CN201711333595.2A CN107805734A (en) | 2017-12-13 | 2017-12-13 | A kind of copper alloy for electronic material and preparation method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63143229A (en) * | 1986-12-08 | 1988-06-15 | Nippon Mining Co Ltd | Copper alloy having superior castability |
| CN101709401A (en) * | 2009-12-11 | 2010-05-19 | 江西省科学院应用物理研究所 | Cu-Cr in-situ composite with boron, silver and rare earth elements added and preparation method thereof |
| CN103789571A (en) * | 2012-10-31 | 2014-05-14 | 同和金属技术有限公司 | Cu-Ni-Co-Si based copper alloy sheet material and method for producing the same |
| CN104357707A (en) * | 2014-11-26 | 2015-02-18 | 农彩丽 | Novel copper alloy and preparation method thereof |
| CN105886833A (en) * | 2016-05-10 | 2016-08-24 | 安徽九华金润铜业有限公司 | Corrosion-resistant chromium-brass alloy |
| CN107090553A (en) * | 2017-04-26 | 2017-08-25 | 宝鸡文理学院 | A kind of high-strength high elasticity copper alloy and preparation method thereof |
-
2017
- 2017-12-13 CN CN201711333595.2A patent/CN107805734A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63143229A (en) * | 1986-12-08 | 1988-06-15 | Nippon Mining Co Ltd | Copper alloy having superior castability |
| CN101709401A (en) * | 2009-12-11 | 2010-05-19 | 江西省科学院应用物理研究所 | Cu-Cr in-situ composite with boron, silver and rare earth elements added and preparation method thereof |
| CN103789571A (en) * | 2012-10-31 | 2014-05-14 | 同和金属技术有限公司 | Cu-Ni-Co-Si based copper alloy sheet material and method for producing the same |
| CN104357707A (en) * | 2014-11-26 | 2015-02-18 | 农彩丽 | Novel copper alloy and preparation method thereof |
| CN105886833A (en) * | 2016-05-10 | 2016-08-24 | 安徽九华金润铜业有限公司 | Corrosion-resistant chromium-brass alloy |
| CN107090553A (en) * | 2017-04-26 | 2017-08-25 | 宝鸡文理学院 | A kind of high-strength high elasticity copper alloy and preparation method thereof |
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