CN107771357B - 层叠透镜结构、其制造方法以及电子设备 - Google Patents

层叠透镜结构、其制造方法以及电子设备 Download PDF

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Publication number
CN107771357B
CN107771357B CN201680035947.3A CN201680035947A CN107771357B CN 107771357 B CN107771357 B CN 107771357B CN 201680035947 A CN201680035947 A CN 201680035947A CN 107771357 B CN107771357 B CN 107771357B
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China
Prior art keywords
substrate
lens
hole
laminated
lens structure
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Chinese (zh)
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CN107771357A (zh
Inventor
松谷弘康
伊藤启之
斋藤卓
大岛启示
岩崎正则
林利彦
佐藤修三
藤井宣年
田泽洋志
白岩利章
石田実
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Sony Corp
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Sony Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00365—Production of microlenses
    • B29D11/00375—Production of microlenses by moulding lenses in holes through a substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
    • G02B13/0085—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing wafer level optics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Lens Barrels (AREA)
  • Studio Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Cameras In General (AREA)
CN201680035947.3A 2015-07-31 2016-07-15 层叠透镜结构、其制造方法以及电子设备 Active CN107771357B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-152921 2015-07-31
JP2015152921 2015-07-31
PCT/JP2016/003350 WO2017022188A1 (en) 2015-07-31 2016-07-15 Stacked lens structure, method of manufacturing the same, and electronic apparatus

Publications (2)

Publication Number Publication Date
CN107771357A CN107771357A (zh) 2018-03-06
CN107771357B true CN107771357B (zh) 2022-01-14

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Country Link
US (3) US10431618B2 (enExample)
EP (1) EP3329314B1 (enExample)
JP (1) JP6764578B2 (enExample)
KR (1) KR20180033167A (enExample)
CN (1) CN107771357B (enExample)
TW (1) TWI741988B (enExample)
WO (1) WO2017022188A1 (enExample)

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TWI701127B (zh) * 2019-05-16 2020-08-11 趙崇禮 透鏡陣列的模具設備
CN112582803B (zh) * 2019-09-30 2022-08-12 Oppo广东移动通信有限公司 阵列透镜、透镜天线和电子设备
TWI748791B (zh) * 2020-07-31 2021-12-01 友達光電股份有限公司 光感測器及其製造方法
TWI752802B (zh) * 2020-08-17 2022-01-11 友達光電股份有限公司 指紋感測模組及指紋辨識裝置
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JP7610464B2 (ja) * 2021-04-28 2025-01-08 株式会社ジャパンディスプレイ 検出装置
TWI769814B (zh) * 2021-05-14 2022-07-01 聯華電子股份有限公司 改善半導體鍵合品質的方法
JP7627764B2 (ja) * 2021-07-19 2025-02-06 オリンパス株式会社 撮像装置、および、内視鏡
CN116203657A (zh) * 2023-02-10 2023-06-02 安徽省东超科技有限公司 等效负折射率平板透镜及其制备方法

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EP3329314A1 (en) 2018-06-06
US11342371B2 (en) 2022-05-24
US20180108697A1 (en) 2018-04-19
KR20180033167A (ko) 2018-04-02
JP2018525684A (ja) 2018-09-06
US20200365639A1 (en) 2020-11-19
US20200006415A1 (en) 2020-01-02
EP3329314B1 (en) 2022-04-20
CN107771357A (zh) 2018-03-06
JP6764578B2 (ja) 2020-10-07
TW201710726A (zh) 2017-03-16
WO2017022188A1 (en) 2017-02-09
US10431618B2 (en) 2019-10-01
TWI741988B (zh) 2021-10-11
US10818717B2 (en) 2020-10-27

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