CN107731718B - 用于热处理腔室的支撑圆柱 - Google Patents

用于热处理腔室的支撑圆柱 Download PDF

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Publication number
CN107731718B
CN107731718B CN201710952706.1A CN201710952706A CN107731718B CN 107731718 B CN107731718 B CN 107731718B CN 201710952706 A CN201710952706 A CN 201710952706A CN 107731718 B CN107731718 B CN 107731718B
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China
Prior art keywords
support cylinder
peripheral surface
quartz glass
substrate
quartz
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CN201710952706.1A
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English (en)
Chinese (zh)
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CN107731718A (zh
Inventor
梅兰·贝德亚特
阿伦·缪尔·亨特
约瑟夫·M·拉内什
诺曼·L·塔姆
杰弗里·托宾
继平·李
马丁·德兰
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Mechanical Engineering (AREA)
CN201710952706.1A 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱 Active CN107731718B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361866379P 2013-08-15 2013-08-15
US61/866,379 2013-08-15
US14/298,389 US9385004B2 (en) 2013-08-15 2014-06-06 Support cylinder for thermal processing chamber
US14/298,389 2014-06-06
CN201480043642.8A CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
PCT/US2014/042025 WO2015023352A1 (en) 2013-08-15 2014-06-12 Support cylinder for thermal processing chamber

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480043642.8A Division CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Publications (2)

Publication Number Publication Date
CN107731718A CN107731718A (zh) 2018-02-23
CN107731718B true CN107731718B (zh) 2022-05-17

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ID=52467142

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Application Number Title Priority Date Filing Date
CN201710952706.1A Active CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710619830.6A Active CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201480043642.8A Active CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201710619830.6A Active CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201480043642.8A Active CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Country Status (6)

Country Link
US (3) US9385004B2 (cg-RX-API-DMAC7.html)
JP (2) JP6453882B2 (cg-RX-API-DMAC7.html)
KR (2) KR101713078B1 (cg-RX-API-DMAC7.html)
CN (3) CN107731718B (cg-RX-API-DMAC7.html)
TW (3) TWI688040B (cg-RX-API-DMAC7.html)
WO (1) WO2015023352A1 (cg-RX-API-DMAC7.html)

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* Cited by examiner, † Cited by third party
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SG10201709699RA (en) * 2013-05-23 2017-12-28 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
US9385004B2 (en) * 2013-08-15 2016-07-05 Applied Materials, Inc. Support cylinder for thermal processing chamber
US9330955B2 (en) * 2013-12-31 2016-05-03 Applied Materials, Inc. Support ring with masked edge
WO2017099919A1 (en) * 2015-12-07 2017-06-15 Applied Materials, Inc. Amalgamated cover ring
TWM573071U (zh) * 2017-03-06 2019-01-11 美商應用材料股份有限公司 用於熱處理腔室的旋轉器蓋與用於處理基板的設備
US11004704B2 (en) 2017-03-17 2021-05-11 Applied Materials, Inc. Finned rotor cover
CN110071064A (zh) * 2018-01-22 2019-07-30 上海新昇半导体科技有限公司 一种改善外延片污染印记的方法
US11594445B2 (en) * 2018-03-13 2023-02-28 Applied Materials, Inc. Support ring with plasma spray coating
CN109148353A (zh) * 2018-08-15 2019-01-04 深圳市华星光电技术有限公司 一种基板承托盘
JP7178823B2 (ja) * 2018-08-17 2022-11-28 東京応化工業株式会社 基板加熱装置および基板処理システム
DE102019104433A1 (de) * 2019-02-21 2020-08-27 Aixtron Se CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur
JP7461214B2 (ja) * 2020-05-19 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
KR102787323B1 (ko) 2020-09-24 2025-03-27 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US20240247404A1 (en) * 2023-01-25 2024-07-25 Applied Materials, Inc. Pre-heat rings and processing chambers including black quartz, and related methods

Citations (2)

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JP2002270530A (ja) * 2001-03-14 2002-09-20 Tokyo Electron Ltd 加熱装置、熱処理装置及びランプ冷却方法
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒

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US960555A (en) * 1906-02-08 1910-06-07 Joseph Johnson Basket.
US5960555A (en) 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6395363B1 (en) * 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
US6133152A (en) 1997-05-16 2000-10-17 Applied Materials, Inc. Co-rotating edge ring extension for use in a semiconductor processing chamber
US6200388B1 (en) 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
US6048403A (en) * 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
JP2000256037A (ja) * 1999-03-05 2000-09-19 Tosoh Corp 透明部を有する黒色石英ガラス及びその製造方法
TW200307652A (en) 2002-04-04 2003-12-16 Tosoh Corp Quartz glass thermal sprayed parts and method for producing the same
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
JP4348542B2 (ja) 2004-08-24 2009-10-21 信越半導体株式会社 石英治具及び半導体製造装置
JP2007042844A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置及びサセプタ
WO2008069194A1 (ja) 2006-12-05 2008-06-12 Shin-Etsu Quartz Products Co., Ltd. 合成不透明石英ガラス及びその製造方法
US7378618B1 (en) * 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
JP5048445B2 (ja) 2007-10-11 2012-10-17 信越石英株式会社 透明層付き黒色合成石英ガラス
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JP5583082B2 (ja) * 2011-06-21 2014-09-03 信越石英株式会社 透明層付き黒色合成石英ガラスの製造方法
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JP2002270530A (ja) * 2001-03-14 2002-09-20 Tokyo Electron Ltd 加熱装置、熱処理装置及びランプ冷却方法
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒

Also Published As

Publication number Publication date
WO2015023352A1 (en) 2015-02-19
US20150050819A1 (en) 2015-02-19
JP2019071439A (ja) 2019-05-09
CN107342253A (zh) 2017-11-10
KR101713078B1 (ko) 2017-03-09
CN105453248B (zh) 2019-12-10
CN107342253B (zh) 2021-12-28
CN107731718A (zh) 2018-02-23
US20170263493A1 (en) 2017-09-14
KR101966566B1 (ko) 2019-04-05
TWI604559B (zh) 2017-11-01
TW201931516A (zh) 2019-08-01
US10128144B2 (en) 2018-11-13
US9385004B2 (en) 2016-07-05
KR20170026647A (ko) 2017-03-08
CN105453248A (zh) 2016-03-30
KR20160044002A (ko) 2016-04-22
TWI688040B (zh) 2020-03-11
US20160300752A1 (en) 2016-10-13
JP6453882B2 (ja) 2019-01-16
JP2016534558A (ja) 2016-11-04
US9659809B2 (en) 2017-05-23
TW201816932A (zh) 2018-05-01
JP6688865B2 (ja) 2020-04-28
TWI656598B (zh) 2019-04-11
TW201507056A (zh) 2015-02-16

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