CN107709601A

CN107709601A - Metal substrate and the deposition mask using the metal substrate

Info

Publication number: CN107709601A
Application number: CN201580080724.4A
Authority: CN
Inventors: 卢健镐; 曹守铉; 黄周炫; 金南昊; 李相范; 林正龙; 韩太勋; 文炳律; 朴宰奭; 孙晓源
Original assignee: LG Innotek Co Ltd
Current assignee: LG Innotek Co Ltd
Priority date: 2015-04-24
Filing date: 2015-08-25
Publication date: 2018-02-16
Anticipated expiration: 2035-08-25
Also published as: EP3993075A1; JP2018513918A; EP3288097A1; CN110923622B; CN110923622A; CN107709601B; EP3288097A4; JP7075214B2; JP2022068330A; WO2016171337A1; CN110760793A

Abstract

Embodiments of the present invention are related to a kind of mask structure for the depositing operation for being applicable to organic luminescent device etc., and allow to provide a kind of deposition mask, and the deposition mask includes：First surface and second surface, the first surface and second surface are orthogonal and facing with each other in the thickness direction of metallic plate；And multiple unit holes, multiple unit holes have through first surface and second surface and the first surface hole and second surface hole that communicate with each other, wherein, the change in size in the first surface hole between adjacent cells hole or second surface hole is controlled within 2% to 10% based on the change in size between optional unit hole, or the center in first surface hole and second surface hole are centrally disposed on by center misaligned position each other based on the surface of first surface.

Description

Metal substrate and the deposition mask using the metal substrate

Technical field

Embodiments of the present invention, which are related to the metallic plate for the depositing operation for being applicable to organic luminescent device and used, is somebody's turn to do The mask structure of metallic plate.

Background technology

In the manufacturing process of organic electroluminescent (EL) color monitor including organic EL luminescent devices, pass through vacuum Depositing operation forms the organic layer including organic material.In this case, it is used for the pattern with organic layer The deposition mask in multiple holes for penetration material of matching.Generally, can by metallic film apply photoresistance film come By performing the lithography solution of etch process or by after sheet glass is electroplated with desired pattern after exposing patterns The electrical forming scheme of execution hierarchical process forms the hole of deposition mask to be formed.

Conventional deposition mask is embodied as the form of common metal mask.However, the side for common metal mask Case concentrates merely on the open area accurately realized for deposition.However, by such scheme, do not improve deposition efficiency and The effect in the dead band for being not subjected to deposition is reduced without significantly generation.

The content of the invention

[technical problem]

Embodiments of the present invention be in order to solving the above problems and make and a kind of deposition mask can be provided, should Deposition mask have adjust unit adjacent to each other it is deposited microporous between uniformity and perform can after depositing operation Prevent the color spot of organic luminescent device (OLED) panel and the structure of moire fringes (Moire).

In addition, another embodiment of the present invention can provide a kind of deposition mask, the deposition mask can be by by structure It is arranged so that center and second table in first surface hole into the first surface hole in the unit hole for deposition and second surface hole The center of face is mismatched to improve deposition efficiency, and can minimize the dead band for being not subjected to depositing operation in deposition, So as to can also improve the uniformity of deposition in the deposition target of large area.

Especially, a kind of metal substrate can be provided, the metal substrate makes in the gold to that will be manufactured into deposition mask Category plate is occurred minimizing twisting when being etched.Furthermore, it is possible to being realized based on metal substrate is included for the multiple of deposition The deposition mask in unit hole.In addition, by controlling the roughness in the unit hole of deposition mask to increase deposition efficiency.

[technical scheme]

In order to solve these problems, can provide according to the embodiment of the present invention a kind of including the metallic plate with thickness Deposition mask.The metallic plate can include first surface and second surface and multiple unit holes, wherein, first surface and Perpendicular to the direction of thickness and opposite each other, multiple unit holes have a first surface hole and second surface hole on two surfaces, and first Surface holes and second surface hole are formed through first surface and second surface to be connected to each other.In unit adjacent to each other The dimension difference in first surface hole or second surface hole between hole can be in the dimension difference between arbitrary unit hole Within 10%.

In addition, a kind of the heavy of metallic plate for including there is thickness (t) can be provided according to another embodiment of the present invention Product mask.Metallic plate can include first surface and second surface and multiple unit holes, wherein, first surface and second surface Perpendicular to the direction of thickness and opposite each other, multiple unit holes have be formed through first surface and second surface with The first surface hole and second surface hole being connected to each other.Metallic plate can include at least one unit hole, wherein, first surface hole The center in center and second surface hole mismatched on the surface of first surface.

In addition, a kind of gold for including the base metal plate with thickness can be provided according to another embodiment of the invention Belong to substrate.Base metal plate is included perpendicular to thickness direction and reciprocal first surface and second surface.From base metal At the specified point of plate extract size be 30mm × 180mm (width × length) sample substrate, and to sample substrate except Inside beyond two inside 10mm in end (part 220) of sample substrate 200 is etched so that forms thickness pair Should be in the etching area of the 2/3 to 1/2 of sample substrate thickness.Then, when sample substrate is arranged on horizontal target surface, sample The distortion index (Hr) of product substrate meets following relation.

[formula 1]

Hr={ (H1-Ha) 2+ (H2-Ha) 2+ (H3-Ha) 2+ (H4-Ha) 2 } 1/2

[formula 2]

Ha=(H1+H2+H3+H4)/4

(Ha refers to distance H1, H2, H3 and the H4's at four angles from horizontal target surface to the sample substrate etched Average value).In addition, it can be provided by using the metallic plate for meeting above-mentioned distortion index (Hr) a kind of including more for what is deposited The deposition mask in individual unit hole.

[advantageous effects]

According to the embodiment of the present invention, the uniformity between the regulation unit hole for being used to deposit adjacent to each other and After performing depositing operation, the color spot and moire fringes of oled panel can be prevented.

In addition, according to another embodiment of the present invention, by the way that the first surface hole in the unit hole for depositing will be formed It is arranged so that the center in first surface hole mismatches with the center in second surface hole with second surface hole, it is heavy so as to improve Product efficiency.Furthermore it is possible to minimize the dead band for being not subjected to depositing operation in deposition process, so as to even in the deposition of large area The uniformity of deposition can also be improved in target.

In addition, according to the embodiment of the present invention, a kind of metal substrate can be provided so as to deposition will be manufactured into What is occurred when the metallic plate of mask is etched is minimizing twisting.

Especially, realized when based on metal substrate according to the embodiment of the present invention including multiple units for depositing During the deposition mask in hole, the distortion of deposition mask can be substantially reduced so that deposition uniformity and deposition efficiency can be maximum Change.

In addition, according to another embodiment of the present invention, when can based on metal substrate according to the embodiment of the present invention When including the deposition mask for the multiple unit holes deposited to realize, the table for the inner circumferential surface for controlling unit hole can be passed through Surface roughness increases deposition efficiency and deposition uniformity.

Brief description of the drawings

Fig. 1 is the schematic diagram for the mode of operation for showing the deposition mask according to embodiment of the present invention.Fig. 2 is schematically The sectional view of the major part of deposition mask according to embodiment of the present invention is shown.

Fig. 3 is the plan for the second surface for showing the deposition mask in the structure according to Fig. 2 of embodiment of the present invention.

Fig. 4 is the plan for the first surface for showing the deposition mask in the structure according to Fig. 2 of embodiment of the present invention.

Fig. 5 is the plane for showing first surface hole and second surface hole when from the second surface in Fig. 4 structure Figure.

Fig. 6 is shown in the central axis and second surface hole according to the arrangement first surface hole of embodiment of the present invention The schematic diagram of the mode of mandrel line.

Fig. 7 is the schematic diagram for showing to determine the mode at the center in Fig. 6 first surface hole.

Fig. 8 is the deposition for schematically showing multiple unit holes including Fig. 2 according to third embodiment of the present invention The sectional view of mask.

Fig. 9 is the sectional view for schematically showing the deposition mask according to another embodiment of the present invention.

Figure 10 is to schematically show wherein to have Fig. 9 first surface hole being connected to each other and the unit in second surface hole The sectional view in hole.

Figure 11 is the partial view for showing wherein to have a part for the first surface in the first surface hole for realizing Figure 10.

Figure 12 is the view for showing arithmetic average roughness (Ra).Figure 13, which is shown, explains 10 points of height of nao-and micro relief (Rz) image.

Figure 14 to Figure 16 is the view of the measurement and the definition that show the linearity according to the present invention.

Figure 17 and Figure 18 is the schematic diagram for the feature for showing metal substrate according to the embodiment of the present invention.

Embodiment

Hereinafter, the configuration according to the present invention and operation be will be described in detail with reference to the accompanying drawings.Referring to the drawings carry out with In lower description, regardless of figure number, identical element will omit allocated identical reference to similar elements Repeated description.Term " first " and " second " are used to explain various elements.Element can not be limited by term.Term is only used for area Divide an element and another element.

1. first embodiment

Referring to Figures 1 and 2, can be in the base portion of such as sedimentary origin S glass according to the deposition mask of embodiment of the present invention Deposition target T is realized on material G, wherein, deposition mask is used as the organic layer for being embodied as being formed Organic Light Emitting Diode (OLED) Mask structure.In this case, deposition mask (M) 100 is realized as the structure with multiple unit holes.Unit hole can To be realized as the first surface hole 110 and second surface hole 130 that there is mutually different width, be connected to each other.

Specifically, similar to Fig. 2 structure, metallic plate, the gold are included according to the deposition mask 100 of embodiment of the present invention Category plate has predetermined thickness and including vertical with thickness direction while reciprocal first surface and second surface.Deposition is covered Film 100 includes multiple unit holes, and unit hole has the first surface hole being connected to each other simultaneously through first surface and second surface 110 and second surface hole 120.In this case, first surface hole 110 and second surface hole 130 share boundary member 120, First surface hole 110 and second surface hole 130 are connected to each other by boundary member 120.Provide multiple unit holes.Especially, According to the embodiment of the present invention, the size between unit hole adjacent to each other in terms of first surface hole or second surface hole is poor Value can be implemented as within the 10% of the size difference being between arbitrary unit hole.In other words, the of adjacent unit hole Dimension difference between one surface holes or second surface hole can have the first surface in a unit hole at arbitrfary point Larger value or less value within the 1% to 10% of the size in hole or second surface hole.Size between adjacent cells hole Difference can be realized more preferably in the range of 2% to 8%.

In such a case, it is possible to based between first surface hole adjacent to each other or second surface hole adjacent to each other Difference in diameter contrasts the dimension difference between unit hole adjacent to each other.

In other words, Fig. 3 is the second surface for showing the deposition mask in the structure according to Fig. 2 of embodiment of the present invention Plan.Fig. 4 is the plane for the first surface for showing the deposition mask in the structure according to Fig. 2 of embodiment of the present invention Figure.

Reference picture 3, when any entity of the realization to multiple unit holes in the second surface hole of second surface (below In, be referred to as " datum hole ") vertical direction diameter Cy and horizontal direction diameter Cx when measuring, the hole adjacent with datum hole (total of six hole as depicted) in terms of the vertical direction diameter Cy between difference be embodied as being within 10%.

In addition, datum hole and another hole adjacent with datum hole in the horizontal direction in terms of diameter Cx between difference can be with It is implemented as being less than 10%.In other words, when the dimension difference between the hole adjacent with a datum hole is realized as being less than 10% When, it can be ensured that deposition uniformity.If the dimension difference between datum hole and adjacent holes is in heavy to improve within 10% Long-pending uniformity, then difference or datum hole between datum hole and another adjacent holes are in terms of the vertical direction diameter Cx with it is another Adjacent holes in the horizontal direction in terms of diameter Cx between deviation can be preferably in the range of 1% to 10% or 2% to 8% In the range of, so as to improve deposition uniformity.On the contrary, when all holes are realized as identical size, it is being subjected to depositing In the oled panel of technique, moire fringes may be occurred with higher possibility.When the size difference between hole adjacent to each other exceedes The size of datum hole 10% when, can make to be subjected to cause the possibility of color spot to increase in the oled panel of deposition mask.

First surface hole of the above-mentioned standard similarly suitable for Fig. 4 realization the first surface of metallic plate.First Difference between surface holes and adjacent holes in terms of the vertical direction diameter By and in terms of horizontal direction diameter Bx can be implemented as Within 10%, wherein, first surface hole is used as arbitrary datum hole.In addition, it is highly preferred that dimension difference can be implemented as 1% Bigger value or smaller value in the range of to 10%.It is highly preferred that the dimension difference between datum hole and adjacent holes can be real Now be 2% to 8% in the range of.

In addition, according to the embodiment of the present invention, the dimension difference between datum hole and adjacent holes can be realized at ± 3 μm Within.

For example, in figure 3, the vertical direction diameter Cy of datum hole can be 36 μm, and the diameter of adjacent holes can be 33 μm or 39 μm, it is ± 3 μm to represent difference.In this case, the diameter deviation percentage between datum hole and adjacent holes becomes For 8.3%, i.e. the dimension difference between datum hole and adjacent holes is embodied as within 10% of the size in datum hole, so as to Improve deposition efficiency.

In another example in figure 3, the horizontal diameter Cx of datum hole is 125 μm, the diameter of adjacent holes can be at 122 μm or 128 In the range of μm.In this case, deviation percent is changed into 2.4%.Therefore, the dimension difference between adjacent holes and reference bore It is embodied as within 10% in datum hole size, so as to improve deposition efficiency.

Fig. 5 is the first surface hole 110 and second surface hole 130 for showing Fig. 4 structure when from second surface Plan.When the dimension difference between above-mentioned hole be any projection of the outer surface based on hole to calculate when, from second surface Outer surface towards second surface hole center protrude the width Y1 of projection or the height X1 of projection be preferably implemented It is less than 20 μm into maximum.The projection corresponds to the defects of occurring substantially in depositing operation structure.According to the reality of the present invention Mode is applied, projection is realized as, with 20 μm of size, therefore ensuring that deposition uniformity.Especially, according to the implementation of the present invention Mode, above-mentioned projection can be realized as the size with 11 μm or smaller of size, further 6 μm or smaller.

2. second embodiment

Hereinafter, by the structure referring to figs. 1 to Fig. 5 descriptions according to the deposition mask of another embodiment of the present invention.

Fig. 6 is central axis and the second surface hole for showing arrangement first surface hole according to the embodiment of the present invention The schematic diagram of the mode of central axis.

There can be the feature of first embodiment according to the structure of second embodiment.However, in the following description, it is The purpose of explanation, the structure with the feature of second embodiment are implemented separately.

According to second embodiment, as illustrated in fig 2 and fig.Deposition mask is with including with specific thicknesses and multiple The structure of the metallic plate in unit hole, wherein, multiple unit holes have the first surface and second for being formed through metallic plate Surface and the first surface hole and second surface hole being connected to each other.In this regard, deposition mask has and first embodiment Structure identical structure.

In this case, deposition mask has following feature：The center F in first surface hole 110 and second surface hole 130 Center E can be mismatched each other in the surface observation on first surface 110.In other words, the center in first surface hole Mismatched each other with the center in second surface hole so that the center in first surface hole and the center in second surface hole do not weigh each other Close.

When in the center and second surface hole such as the first surface hole described in second embodiment of the present invention When the heart mismatches to cause the center in the center in first surface hole and second surface hole misaligned each other each other, as it ensure that more High deposition uniformity and obtain superior benefit.

As shown in Figure 6, when in view of the spoke from the sedimentary origin (S) separated with the deposition mask with multiple unit holes During firing angle, the deposition materials of sedimentary origin (S) are applied in the unit hole of opening position different from each other.Therefore, deposition materials may Unevenly transmitted.Therefore, according to the present invention, in order to improve deposition uniformity, each hole is implemented so that second surface The central axis in hole and the central axis in first surface hole mismatch each other.Therefore, even in throughout the base with larger area In the depositing operation performed in the whole surface of plate, deposition materials can also be transmitted equably, so as to improve deposition uniformity.This Outside, even if when needing to increase deposit thickness, the structure also allows in the regional area or whole region throughout deposition target Inside effectively adjust deposit thickness.

Wherein misaligned arrangement can be as follows each other at the center in the center in first surface hole and second surface hole Structure, in the structure, when establishing the first table perpendicular to metallic plate at the center at the center in first surface hole or second surface During the imaginary vertical line of face or second surface, imaginary vertical line extends only through the two of the center of first surface and the center of second surface One of person.Therefore, the central axis of the central axis in first surface hole or second surface can mismatch each other.

In addition, in the center and second surface hole in the first surface hole limited second embodiment of the invention The heart can refer to when the outer surface in first surface hole and second surface hole is circular or oval in circular or ellipse The heart.The center of first surface and the center of second surface represent polygon in the outer surface in first surface hole and second surface hole When can represent center of gravity.

Alternatively, as shown in Fig. 6 structure, even if plane hole has a case that the warp architecture of rounding in its corner Under, when center of gravity is determined, center of gravity also serves as the center in plane hole.

In addition, on realizing the angle for having bending (according to the embodiment of the present invention, when tip being present in the outside of plane hole When, tip is used as angle, and when the marginal portion with bending be present, the part with the curvature smaller than the curvature of surrounding is used as Angle) in the case of plane hole center for, when being provided with the n angle with curvature and n is even number, by relative The quantity of angle setting-out and line is changed into K.In this case, if the quantity K of line is three or two, three can be surrounded The point-rendering circle that bar line or two lines intersect each other.Round center may be used as the center in plane hole.

Alternatively, if the quantity (n) at angle is odd number, angle and the side setting-out towards angle are passed through.Assuming that the quantity of line For " k ", setting-out is untill the quantity (k) of line is 3 or 2.Then, the point that line intersects each other is used as the center in plane hole.

For example, Fig. 7 is the view for showing to determine the center F in Fig. 6 first surface hole 110 mode, wherein, the number of fillet Amount is 4 (even numbers) altogether.Therefore, when another on the direction at another angle from a central point of curvature to being positioned at When individual angle setting-out b1 and b2, the quantity (K) of line is two, and center F of the point as first surface hole that two lines are intersecting.

In addition, the center E in second surface hole 130 is determined in an identical manner, and unit hole is implemented so that center E Mismatched each other with F.Especially, as shown in Figure 6, between the center F in first surface hole and the center E in second surface hole away from From at least the 90% of the length A for the diameter that d can be realized as second surface hole, i.e. 0.9A.

In addition, the center F in first surface hole can be realized in this scope with the distance between the center E in second surface hole d It is interior：Preferably the 50% or smaller of the length A of the diameter in second surface hole, more preferably 0.1%~10% scope, 0.2% ~8% scope or 0.2% or 5% scope.When the mismatch degree of the distance between central axis is realized as second The length A of the diameter of surface holes at least 90% when, can further improve the uniformity of deposition efficiency.

In other words, when the length A of the diameter in second surface hole is 125 μm, the center (F) and second in first surface hole The distance between the center (E) of surface holes (d) can be realized as at least 112.5 μm.

As described above, using deposition mask depositing operation in, due to all unit holes of sedimentary origin and mask not by It is arranged on the bottom of vertical direction.Therefore, angle and bottom level more than special angle are needed to carry for each unit hole Height is used for OLED deposition uniformity.

In this case, when using deposition mask according to the embodiment of the present invention, first surface hole and second Surface holes are arranged to be mismatched each other, thus improves deposition efficiency.Further, since arrangement, it is possible to reduce performing Dead band during depositing operation, and can also be obtained in depositing operation by increasing deposit thickness or the thick material of coating Higher utilization rate.When depositing bigger area by OLED depositing devices, tensile force may increase.In this case, When the position using first surface hole second embodiment of the invention and the position in second surface hole that During this unmatched unit sectional hole patterns, tensile force is equally distributed.Thereby it can be assured that OLED deposition uniformity.

3. the 3rd embodiment

Hereinafter, another embodiment of the invention will be described.

Current 3rd embodiment can use the deposition described above by reference to first embodiment and second embodiment Whole features of mask.However, in the following description, there is the structure quilt of the feature of the 3rd embodiment for illustrative purposes Independently implement.

Fig. 8 is the deposition for schematically showing multiple unit holes including Fig. 2 according to third embodiment of the present invention The profile of mask.

Reference picture 2 and Fig. 8, the metal with specific thicknesses is included according to the deposition mask of third embodiment of the present invention Plate and metallic plate can include perpendicular to thickness direction and reciprocal first surface and second surface.In such case Under, metallic plate includes multiple unit holes, and the plurality of unit hole has by being each passed through first surface and second surface to pass through side The first surface hole 110 and second surface hole 130 that boundary part 120 is connected to each other and formed, wherein, boundary member 120 is through the One surface holes 110 and second surface hole 130 are connected to each other.

Especially, unit hole can be realized in the following manner：The depth that first surface hole is formed on the thickness direction of metallic plate Degree is different from the depth that second surface hole is formed on the thickness direction of metallic plate.In this case, based on boundary member 120 Outermost protruding point A1 to A21, by with second surface hole 130 and be subjected to depositing operation region be referred to as " effective coverage (AC) ", wherein, first surface hole 110 and second surface hole 130 are connected to each other by boundary member 120.In addition, it will be not subjected to The region of depositing operation is defined as non-active area (NC), wherein, the region is without second surface hole and is included in border In the outermost protruding point A1 to A21 of part 120 Outboard Sections, first surface hole 110 and second surface hole 130 pass through side Boundary part 120 is connected to each other.

In other words, reference picture 2 and Fig. 8, the unit hole in the AC of effective coverage can be implemented as structure described above, made Obtain first surface hole 110 and be more than the depth " a " for arriving boundary member 120 in second surface hole 130 to the depth " b " of boundary member 120. In addition, as entirety, unit hole can be implemented so as to the depth " a " in second surface hole and the integral thickness " c " of metallic plate Between relation meet 1：3 to 30 scope.

According to the embodiment of the present invention, when the unit hole in structure is realized as different width and depth, second An important factor for depth " a " of surface holes 130 is with deposit thickness is made adjustments.When the depth " a " in second surface hole 130 excessively increases When, the depth in second surface hole 130 can exceed that above-mentioned thickness ratio model for the thickness " c " of whole base material Enclose.In this case, the change of organic material thickness may increase, and thereby resulting in wherein can not deposit and cause the cause in dead band Life problem.Dead band reduces the area of organic material in whole OLED, thus shortens the life-span.

Therefore, according to third embodiment of the present invention, the depth " a " in second surface hole 130 and the thickness " c " of metallic plate Between ratio can meet 1 while above range is met：The ratio of (3.5 to 12.5).More specifically, can be by second Ratio between the depth " a " of surface holes 130 and the thickness " c " of metallic plate is implemented as satisfaction 1:The ratio of (4.5 to 10.5).Root According to embodiments of the present invention, meet that the thickness " c " of the metallic plate of above-mentioned ratio range can be implemented as being in 10 μm to 50 μm In the range of.If the thickness of metallic plate is implemented as to be less than 10 μm, the degreeof tortuosity of base material increases, therefore excessively program control System is difficult.If the thickness of base material, more than 50 μm, dead band increase is so that it may not be possible to real in subsequent deposition process Existing OLED fine pattern.Especially, the thickness " c " of above-mentioned base material within the above range can be implemented as meeting 15 μm to the thickness in 40 μ ms.In addition, it is highly preferred that the thickness of base material can realize into the model in 20 μm to 30 μm In enclosing.

Furthermore it is possible to the depth " a " corresponding to the second surface hole of the thickness of metallic plate " c " is preferably implemented into satisfaction 0.1 μm to 7 μm of scope.If the depth " a " in second surface hole is implemented as to be less than 0.1 μm, possibly hole can not be realized.Such as The depth " a " in fruit second surface hole, due to the dead band in subsequent deposition process, it is fine possibly can not to form OLED more than 7 μm Pattern, and the area of organic material may reduce so that and the OLED life-spans are likely to reduced.Especially, the depth in second surface hole " a " can be implemented as in the range of within the above range 1 μm to 6 μm.It is highly preferred that the depth " a " in second surface hole can To be embodied as being in the range of 2 μm to 4.5 μm.

It is contemplated that the inclination angle for the inner surface that deposition materials are introduced to first surface hole 110 as shown in Figure 2 is to enter one Step improves deposition efficiency.

Due to using inclination angle theta when, inclination angle theta meets above range, therefore ensures that deposition uniformity, wherein, inclination angle theta pass through by It is positioned at the outermost of first surface holes 110 of the outermost arbitrfary point A1 of boundary member 120 with being positioned at first surface Arbitrfary point B1 connections and formed.If inclination angle exceedes or crossed the scope, the possibility increase in dead band is formed wherein, so as to Make it difficult to ensure that the reliability of uniform deposition.According to the embodiment of the present invention, realized as in the range of inclination angle (θ) Preferred embodiment, angle of inclination (θ) can be implemented as meeting 30 ° to 60 ° of scope, it is highly preferred that meeting 32 ° extremely 38 ° of scope or 52 ° to 58 ° of scope.

According to a kind of embodiment, make first by sharing the border surface between first surface hole and second surface hole Surface holes and the structure that second surface hole is connected have the width in each hole towards in metallic plate in the structure in first surface hole It is favourable to deposition efficiency during the feature that centre partly reduces.It is highly preferred that can be by the inner surface in the second hole or the first hole It is implemented as the structure with curvature.Compared with simple incline structure, the structure with curvature can adjust introducing deposition materials Density and deposition uniformity can be improved.

In addition, according to the embodiment of the present invention, the width C of the opening in a surface in second surface hole, border The partial width A and width B of the open pore in apparent surface of first surface can have B>C>A ratio.This can The density of deposition materials is introduced with regulation and deposition uniformity can be improved.Furthermore it is possible to by the one of second surface hole Length difference (d=C-A) between the width " C " of opening in surface and the width " A " of boundary member is implemented as meeting 0.2 μm To 14 μm of scope.

In other words, vertical distance d1 can meet to be in the range of 0.1 μm to 7 μm, wherein, vertical distance d1 is by fixed Position the most external office on a surface in second surface hole arbitrfary point C1 and be positioned at the most external office of boundary member Formed between the A1 of arbitrfary point.If vertical range d1 is less than 0.1 μm, possibly hole can not be realized.If vertical distance d1 is more than 7 μm, OLED fine patterns may not be formed due to the dead band in subsequent process, the area of organic material may reduce, from And cause the OLED losts of life.In addition, according to the preferred embodiment in the number range of vertical distance d1 realizations, vertical distance D1 is realized can be in the range of 1 μm to 6 μm, and more specifically, it is possible to achieve in the range of 2 μm to 4.5 μm.

In addition, according to the embodiment of the present invention, can be by second surface hole (or first surface hole) in a surface The corner of opening be implemented as the structure with curvature.

As shown in Fig. 5 or Fig. 6, when consideration is exposed to the top surface in second surface hole 110 --- i.e., the one of base material Individual surface --- open area horizontal cross sectional geometry when, horizontal cross sectional geometry can be implemented as to rectangular configuration or square Structure.In that case it is preferable that the rounded feature for being embodied as there is specific curvature in each corner portion.

If the curvature of the rounded portion by extending corner is embodied as being in 5 μm and the virtual diameter of a circle R formed To in the range of 20 μm, then it can further widen deposition region.Having the shape of angular bore portion may make it difficult to put down Deposition process is performed suitablely and essentially forms dead band.Deposition efficiency increase in rounded feature.Especially, can be above-mentioned Curvature in number range represents highest sedimentation rate and realizes uniform deposition.If diameter is less than 5 μm, deposition efficiency May be with the structure without curvature without very big difference.More than 20 μm, if sedimentation rate may reduce diameter.Especially Ground, according to the preferred embodiment in the range of diameter R, diameter R can be implemented as being in the range of 7 μm to 15 μm, and More specifically, in the range of 8 μm to 12 μm.

Especially, according to the embodiment of the present invention, can be preferably by base material surface or opposite table Surface roughness Ra on face realizes to be at most 2 μm, wherein, surface roughness Ra is used as the deposition quality for improving organic material One factor.If surface roughness increases, the resistance moved for preventing mounting material along hole is produced.If surface roughness Reach at least 2 μm, be then difficult to the deposition smoothed out, so as to produce the increase of the ratio in dead band.

4. the 4th embodiment

Hereinafter, it is proposed that according to the deposition mask of another embodiment of the present invention.According to first embodiment to The technical characteristic of three embodiments can apply to current 4th embodiment.However, in the following description, for the mesh of explanation The feature according to the 4th embodiment be performed individually.

According to the 4th embodiment, deposition mask includes the metallic plate with specific thicknesses and metallic plate can include hanging down Directly in thickness direction and reciprocal first surface and second surface.In this case, metallic plate includes multiple unit holes, Multiple unit holes have by be formed through first surface and second surface to be connected to each other by boundary member 120 the One surface holes 110 and second surface hole 130, wherein, boundary member 120 by first surface hole 110 and second surface hole 130 that This connection.

However, reference picture 9, the difference of Fig. 9 structure and the structure of the 3rd embodiment of the description of reference picture 8 exists In：In the structure of deposition mask, the plate thickness in the AC of effective coverage is different from non-active area NC plate thickness, Wherein, the structure of deposition mask includes the effective coverage AC with unit hole and the non-active area being arranged on outside the AC of effective coverage Domain NC.

Especially, reference picture 9, according to the 4th embodiment, when metal of the consideration in the effective coverage with unit hole During the maximum gauge h2 of the maximum gauge h1 of plate and the metallic plate in the non-active area outside effective coverage, by effective coverage In the maximum gauge h1 of metallic plate be implemented as that there is the value smaller than the maximum gauge H2 of the metallic plate in non-active area. In this case, the maximum gauge h1 of the metallic plate in effective coverage is defined as to the thickness direction along metallic plate of metallic plate Prominent most long projection (hereinafter referred to as " projection "；G1 the maximum in thickness).

In such a case, it is possible to make the maximum gauge h2 of the metallic plate in non-active area and the metal in effective coverage The maximum gauge h1 of plate relation meets 0.2h1<h2<1.0h1.Furthermore, it is possible to maximum gauge h2 is implemented as meeting to include 0.2h1 in above range<h2<0.9h1.

The maximum gauge h1 of metallic plate in effective coverage can be implemented as to the maximum of the metallic plate in non-active area The 20% to 100% of thickness h 2.In addition, within the above range, maximum gauge h1 can be formed as to have maximum gauge h2's 25% to 85% thickness, it is further 30% to 60% thickness with maximum gauge h2.For example, when in non-active area Maximum gauge h2 when being 30 μm, the maximum gauge h1 of the metallic plate in effective coverage can be implemented as 6 μm to 27 μm, 7.5 μm To 25.5 μm or 9 μm to 18 μm.

Above-mentioned number range can increase deposition efficiency by adjusting the slope (inclination angle) in first surface hole.If drop The height of low effective coverage, then angle of deposit is can easily be ensured that and controls, so that realizing high-resolution sink Product mask.

Figure 10 is to schematically show the unit hole that wherein there is Fig. 9 first surface hole and second surface hole to be connected to each other Sectional view.Reference picture 9 and Figure 10, as described above, in order to especially ensure angle of deposit, it may be considered that from being arranged on metallic plate table The inclination for the line that one point of the opening in first surface hole or second surface hole in face extends to the predetermined point on boundary member Angle.In such a case, it is possible to the slope realized from a point on the long axis of opening to boundary member is implemented as difference In the slope from a point on minor axis to boundary member.

Specifically, the first tiltangleθ 1 is implemented as it is different from the second tiltangleθ 2, wherein, the first tiltangleθ 1 is from sudden and violent A point being exposed on the long axis of the first surface hole 110 on the surface of metallic plate or the opening in second surface hole 130 extends to The angle of the line of the predetermined point on boundary member 120 between first surface hole and second surface hole, the second tiltangleθ 2 It is to be extended to from a point on the minor axis of the first surface hole on the surface of metallic plate or the opening in second surface hole The angle of the line of a point on boundary member 120 between first surface hole and second surface hole.In other words, can be with Different slopes can be realized on the same inner surface in first surface hole or second surface hole.According to present embodiment, especially Ground, the first tiltangleθ 1 is implemented as to be less than the second tiltangleθ 2.In this case, the first tiltangleθ 1 can be realized In the range of 20 ° to 80 °.When realizing different inclination angles in the same interior section in second surface hole (or first surface hole) When, the uniformity of depositing member can be improved.

In addition, in the structure according to current 4th embodiment, can be in the effective coverage described towards reference picture 9 The structure with curvature is formed at the projection g1 of tip.If as discussed above, at the projection g1 of the tip towards effective coverage Realization has curvature, then can effectively disperse the deposition materials introduced by first surface hole and introduce adjacent not same district Domain.It is thus possible to improve deposition efficiency and deposition uniformity.Therefore, at projection g1 formed with curvature in the case of, by curvature Radius R is embodied as 0.5 μm or bigger.If realizing that radius of curvature R is less than 0.5 μm, dispersion efficiency may reduce.

Additionally, in the structure according to current 4th embodiment, tension adjustment pattern HF can be by along metallic plate Thickness direction etch figures(s) 9 shown in non-active area NC realize.Tension adjustment pattern HF can be implemented as having recessed Groove pattern structure, wherein, the groove pattern structure is realized in the structure that metallic plate is not pierced.

Half-etched regions can be implemented as to have the thickness thinner than the thickness h 1 of metallic plate.This is in OLED deposition process In be required when applying tension to the deposition mask in equipment for by making will focus on the tension force on effective coverage point Dissipate to efficiently perform depositing operation, so that deposition materials have uniformity.

Especially, half-etched regions can be implemented as to 10% to 100% scope with the thickness h 1 in metallic plate Interior thickness.In other words, the thickness h 3 of half-etched regions can be implemented as relative to the metallic plate in non-active area Thickness h 1 and meet 0.1h1<h3<1.0h1 relation.The thickness of half-etched regions can be implemented as to the thickness in metallic plate In the range of the 20% to 80% or 30% to 70% of the thickness h 1 of metallic plate in the thickness range of the 10% to 100% of h1.

For example, when metallic plate has 30 μm of thickness, the thickness of half-etched regions can be in the range of 3 μm to 27 μm (in 10% to 90% thickness range of the thickness h 1 of metallic plate).In addition, in order to pass through the realization in thinner structure Half-etched regions produce the effect of scattered tension force, can be implemented as half-etched regions in the range of 6 μm to 24 μm, it is The 20% to 80% of the thickness of metallic plate, or be implemented as in the range of 9 μm to 21 μm, it is the 30% of the thickness of metallic plate To 70%.

Figure 11 is the partial view for showing to realize a part for the first surface in the first surface hole for having Figure 10.Reference picture 10 And Figure 11, in the structure according to current 4th embodiment, multiple first surfaces are realized, wherein, first surface is and face Surface relative raised g1 to the tip of above-mentioned effective coverage.Therefore, by the way that first surface to be implemented as to have different height Degree, deposition spacing can be reduced in deposition process.In other words, can be by point Z1, Z2 and Z3 in Figure 11 structure Highly it is implemented as different from each other.

5. the 5th embodiment

Hereinafter, the structure by description according to the deposition mask of another embodiment of the present invention.It is real according to the current 5th Whole features of first to fourth embodiment can be had by applying the structure of mode.However, it will focus on independent realize according to the The example for the structure that five embodiments are characterized carries out following description.

It will be retouched below by using the profile for the major part for showing the deposition mask according to embodiment of the present invention State the feature of the 5th embodiment.

Specifically, metallic plate is included similar to Fig. 4 structure, deposition mask 100 according to the embodiment of the present invention, should Metallic plate has predetermined thickness and including perpendicular to thickness direction while reciprocal first surface and second surface.Deposition Mask 100 is included with the table of first surface hole 110 and second being connected to each other while through first surface and second surface Multiple unit holes of face 130.In this case, first surface hole 110 and second surface hole 130 share boundary member 120, First surface hole 110 and second surface hole 130 are connected to each other by boundary member 120.Unit hole is realized as being provided with multiple.

It is equal to or less than the 3rd roughness in such a case, it is possible to be implemented as having by unit hole in deposition mask The roughness value of Ra3 roughness value, wherein, the 3rd roughness Ra 3 is the surface roughness of first surface 112.In other words, The value of the value of first roughness Ra 1 of the first inner surface or the second roughness Ra 2 of the second inner surface 131 can be formed as Value with less than the 3rd roughness Ra 3, wherein, the second inner surface 131 is the inner surface in second surface hole.[Ra3=(Ra2 or Ra1)]

It is equal to or more than the first inner surface furthermore, it is possible to which the second roughness Ra 2 of the second inner surface 131 is formed as having The value of 111 the first roughness Ra 1, wherein, the second inner surface 131 is the inner surface in second surface hole, and the first inner surface 111 is The inner surface in first surface hole 110.[Ra2=Ra1].

If reference quantity or bigger is formed on the surface of this deposition mask realized with metal material (metal mask) Roughness, then the linearity (Fig. 7 line roughness) in unit hole is exerted one's influence, the unit hole is to use when forming deposition mask In the hole of deposition.Therefore, organic material can not be deposited smoothly.In addition, ought such as OLED organic material be deposited and so When being cleaned afterwards, the cleaning capacity of organic material reduces so that may shorten the life-span of deposition mask.

, can be by the arithmetic average roughness Ra1 of the first inner surface and the arithmetic of the second inner surface according to present embodiment Average roughness Ra 2 is implemented as 1.0 μm or smaller.If 0.08 μm within the above range is to 0.5 μm or 0.15 μm to 0.3 The mean roughness (Ra) of the first inner surface, the second inner surface and first surface is realized in the range of μm, then it is heavy to realize Accumulate efficiency and increase reliability.

In this case, as shown in Figure 12, arithmetic average roughness Ra is expressed as roughness average (Ra), center Line average value (CLA), arithmetic mean of instantaneous value (AA) and arithmetic average roughness Ra are by calculating the surface in the range of datum line The height at peak and being obtained relative to the depth of datum line for paddy.In other words, as shown in Fig. 5 curve, relative to The datum line (center line) for making the benchmark on the surface of measurement roughness represents roughness and calculated by arithmetic mean of instantaneous value.

In addition, in the another aspect of embodiments of the present invention, can be by the first inner surface of deposition mask, second The value of 10 points of height (Rz) of nao-and micro relief of at least one of surface and first surface is implemented as 3.0 μm or smaller.In addition, Can be 10 points high by the nao-and micro relief of at least one of the first inner surface, the second inner surface and first surface of deposition mask The value of degree (Rz) is embodied as 2.5 or smaller, specifically, the scope 1.5 to 2.5 is embodied as while above range is met It is interior, so as to improve deposition efficiency and increase reliability.

In this case, as shown in Figure 13,10 points of height (Rz) of nao-and micro relief can refer to be measured coarse The surface roughness at 10 points around the datum line of the reference surface of the target surface of degree.

In addition, in deposition mask according to the embodiment of the present invention, can be by the outer of the unit hole that reference picture 2 describes The line roughness (linearity for being referred to as unit hole) in footpath is implemented as 1.5 μm.Line roughness --- the i.e. straight line of the external diameter in unit hole Degree --- as the index represented from datum line (center line) to the inclined degree of either side, wherein, the datum line is by drawing The straight line extended from the central point of the external diameter in hole is formed.The farthest distance of distance center line is represented with linearity.

According to the embodiment of the present invention, measurement linearity is described into reference picture 14 to Figure 16.Figure 14 and Figure 15 are shown The image of the true outward appearance in Fig. 2 first surface hole.Reference picture 14 and Figure 15, it is assumed that the minor axis of the opening in first surface hole and Long axis are known respectively as " x " and " y ", can be by the total length of the y-axis measured only about the y-axis as long axis point Into two, and the center of y-axis can be referred to as " y2 ".In this case, measured along the circumference of the external diameter of opening thick Rugosity, while meet the scope from the distance of leftward or rightward 1.5 μm of center " y2 ", i.e. 3 μm of scope altogether.In such case Under, measurement range is no more than 3 μm of scope.While 3 μm of scope is met, deposition according to the embodiment of the present invention The linearity of mask can be realized as 1.5 μm or smaller.In other words, while 3 μm of measurement range is met, linearity 1.5 μm or smaller can be realized as.

6. the 6th embodiment

Hereinafter, description is being manufactured according to institute in the deposition mask of above-mentioned first embodiment to the 5th embodiment The example of the metal substrate used.

Figure 17 and 18 is the schematic diagram for the feature for showing the metal substrate according to embodiment of the present invention.

Reference picture 17 and Figure 18, it can be enough to pass through etching by being implemented as having according to the metallic plate of embodiment of the present invention Base metal plate with predetermined thickness manufactures the thickness of deposition mask.Furthermore it is possible to metallic plate is implemented as to make local torsion It is bent or overall minimizing twisting.

Therefore, as shown in Figure 17, in the case of metallic plate according to the first embodiment of the invention, from base portion gold Category plate extraction sample substrate 200 and etched sample substrate 200 realizes etching area 210 and non-etched areas 220, wherein, Base metal plate has predetermined thickness in the whole part of metallic plate.(hereinafter, it is used for what is extracted from base metal plate The substrate of etching be referred to as " sample substrate ", and by it is being extracted from base substrate and be not subjected to etching substrate be referred to as " unit base Plate ").

In this case, base metal plate is included perpendicular to thickness direction and reciprocal first surface and the second table Face.On base metal plate, the sample for being 30mm × 180mm (width × length) from the arbitrfary point of base metal plate extraction size Substrate 200 and to the inside in addition to two inside 10mm in end (part 220) from sample substrate 200 of sample substrate Perform etch process so that etching area 210 is implemented as 2/3 to 1/2 thickness with the thickness corresponding to sample substrate 200 Degree.Then, when sample substrate is arranged on horizontal target surface, the distortion index (Hr) for being subjected to the sample substrate of etching is full It is enough lower relation.

Formula 1

Hr={ (H1-Ha) 2+ (H2-Ha) 2+ (H3-Ha) 2+ (H4-Ha) 2 } 1/2

Formula 2

Ha=(H1+H2+H3+H4)/4

(Ha refers to being averaged for distance H1, H2, H3 and H4 from horizontal target surface to four angles of institute's etched sample substrate Value.)

Specifically, described below with reference to Fig. 1, Figure 17 and Figure 18 according to the metal substrate of embodiment of the present invention Feature.

Generally, as shown in fig. 1, the deposition manufactured by using metal substrate according to the embodiment of the present invention is covered Film is used as mask structure to realize OLED organic layer.Deposition mask is to be realized on the base portion G of such as sedimentary origin glass Target T is deposited to provide deposition materials.In this case, deposition mask (M) 100 is implemented as to the knot with multiple unit holes Structure.Generally, in order to improve the deposition uniformity in OLED depositions, deposition mask must keep uniform shape during deposition process State.

However, substantially, in the case where metallic plate is etched away to manufacture deposition mask, the thickness of metallic plate significantly subtracts It is small.If realizing multiple deposition holes in the metallic plate that thickness is substantially reduced, manufactured deposition mask easily distorts.Cause This, in arrangement as shown in Figure 1,1, deposition uniformity can not be ensured.

Therefore, embodiments of the present invention, which can provide, can make the distortion as caused by metallic plate or in etching metal plate Caused minimizing twisting metal substrate.

According to the manufacturing process of the metal substrate of the present invention, the sample that size is 30mm × 180mm is extracted from base substrate Product substrate.

Hereafter, length be 180mm sample substrate in addition to the both sides 10mm of long axis, 1/2 to 2/3 sample base Plate is subjected to etching.Then, the sample substrate for being subjected to etching is arranged on the i.e. such as surface plate in surface for ensuring flatness When in target, height H1, H2, H3, the H4 at four angles of the sample substrate being spaced apart with reference plane are measured, wherein, reference plane is The horizontal target surface of surface plate.

In this case, when height H1, H2, H3 and the H4 at four angles of the sample substrate being spaced apart with reference plane are equal to Or during more than " 0 ", sample substrate is confirmed as distortion.Pass through the index represented with exponential form as shown in formula 1 (Hr) this degreeof tortuosity is represented.

Therefore, with the increase for distorting index Hr of sample substrate, the torsion resistance increase of substrate.According to the implementation of the present invention Mode, when the non-etched sample substrate extracted to the predetermined point from base metal plate with 30mm × 180mm equidimensions (below In, be referred to as " unit substrate ") with contrasted by the distortion index of the sample substrate etched when, by the sample base etched The distortion index of plate is more than the distortion index of non-etched sample substrate.

In other words, it is the predetermined point from above-mentioned base metal plate having been described above is (wide with 30mm × 180mm Degree × length) size extraction non-etched sample substrate (unit substrate) be arranged on horizontal target surface so that by for The distortion index Hr (T1) of formula 1 and formula 2 extraction at substrate T1 four angles is equal to or less than from the extraction of base metal plate And by the sample substrate T2 etched distortion index Hr (T2).This can be represented with below equation.

Formula 3

Hr (T1)=Hr (T2)

Especially, according to the embodiment of the present invention, the distortion index of sample substrate can be implemented as being equal to or less than 10.Therefore, if the thickness of base substrate is 20 μm, and if extraction and is etched sample substrate, then by etching The thickness of sample substrate is implemented as 10 μm or smaller at four angles of sample substrate.

In other words, 10 or smaller will can be implemented as by the distortion index of the sample substrate etched, it is preferable that realize Into the value in the range of 0.2 to 7 or 0.5 to 5., can be with if the distortion index of sample substrate is implemented as into 10 or smaller Reduce the twisted phenomena when manufacturing final deposition mask.In addition, OLED lateral deviation reduces in OLED depositions, so as to Improve deposition uniformity.

According to the embodiment of the present invention, in order to which the distortion index of sample substrate is implemented as into 10 or smaller, by base portion Material, which is realized, can perform cooling technique and rolling mill practice during metallic plate.Once to base material at a temperature of 10 DEG C to 20 DEG C After performing cooling technique, rolling mill practice can be performed.Rolling mill practice is performed to realize the metallic plate with desired thickness. In this case, rolling degree is a key factor.In addition, relative to the unit volume at the predetermined point of base material (1mm³), reduction ratio can be implemented as 2/3 to 1/5.

Figure 18 is shown when extracting sample substrate from metallic plate 200 according to the embodiment of the present invention and being etched Distortion index view.As it is shown in the figures, four angles of sample substrate are spaced apart and away from water with horizontal target surface ST At least one of distance H1 to H4 of flat target surface has the value different from Distance Remaining.In addition, in the short of sample substrate The distance H1 and H2 or distance H3 and H4 of adjacent part on axis can be with different from each other.

In the case of metal substrate according to the embodiment of the present invention, deposition mask can be implemented as including having First surface hole and multiple unit holes in second surface hole, wherein, first surface hole and second surface hole are formed through metal The first surface and second surface of the etching area of plate are to be connected to each other.Especially, the deposition mask realized by this way can To significantly decrease distortion so that deposition reliability can be realized.

Although the preferred embodiment of the present invention has been described for illustrative purposes, those skilled in the art will It will be appreciated that in the case where not departing from the scope and spirit of the present invention as disclosed in appended claim, can carry out Various remodeling, addition and replacement.

Claims

1. a kind of deposition mask, including：

Metallic plate with thickness,

Wherein, the metallic plate includes：First surface and second surface, the first surface and the second surface are perpendicular to institute State the direction of thickness and opposite each other；And multiple unit holes, the unit hole have first surface hole and second surface hole, The first surface hole and the second surface hole are formed through the first surface and the second surface with each other Connection, and

Wherein, the dimension difference in the first surface hole between unit hole adjacent to each other or the second surface hole, which is in, appoints Within the 10% of the dimension difference anticipated between unit hole.

2. deposition mask according to claim 1, wherein, the dimension difference between the unit hole is formed so that Dimension difference between this adjacent first surface hole or second surface hole adjacent to each other is within ± 3 μm.

3. deposition mask according to claim 2, wherein, between the first surface hole or between the second surface hole Dimension difference be the first surface hole or the second surface hole the diameter formed in a first direction and described first Surface holes or the diameter between the diameter being upwardly formed perpendicular to the second party of the first direction in the second surface hole Difference.

4. deposition mask according to claim 1, wherein, the projection protruded from the outer surface in the second surface hole Width or height have 20 μm of maximum.

5. a kind of deposition mask, including：

Metallic plate with thickness,

Wherein, the metallic plate is included perpendicular to the direction of the thickness and reciprocal first surface and second surface, And multiple unit holes, the unit hole, which has, is formed through the first surface and the second surface to connect each other The first surface hole and second surface hole connect, and

Wherein, the metallic plate includes at least one unit hole, at least one unit hole, the first surface hole The center at center and the second surface hole mismatches on the surface of the first surface.

6. deposition mask according to claim 5, wherein, the center and the second surface in the first surface hole The unmatched structure in the center in hole is by described from the center in the first surface hole and the second surface hole Draw one of in the heart perpendicular to the metallic plate the first surface or the second surface surface it is virtual vertical Line causes the virtual vertical line to be not passed through in the center in the first surface hole and the described of the second surface hole The remaining one of the heart and formed.

7. deposition mask according to claim 5, wherein, the center and the second surface in the first surface hole The distance between the center in hole (b) is equal to or less than the 0.9a of the length (a) of the diameter in the second surface hole.

8. deposition mask according to claim 5, wherein, the first surface hole between unit hole adjacent to each other or The dimension difference in the second surface hole is within 10% of the dimension difference between arbitrary unit hole.

9. deposition mask according to claim 5, wherein, the direction constriction of the width in the unit hole along the thickness is extremely Border surface as the tie point between the first surface hole and the second surface hole.

10. deposition mask according to claim 7, wherein, the first surface hole exposed to the first surface The width of opening is more than the width of the opening exposed to the second surface in the second surface hole.

11. a kind of deposition mask, including：

Metallic plate with thickness,

Wherein, the metallic plate includes：First surface and second surface, the first surface and the second surface are perpendicular to institute State the direction of thickness and opposite each other；And multiple unit holes, the unit hole, which has, is formed through described first The first surface hole and second surface hole of surface and the second surface to be connected to each other, and

Wherein, the maximum gauge (h1) in the effective coverage with the unit hole of the metallic plate and the metallic plate The maximum gauge (h2) being arranged in the non-active area of the outside of the effective coverage is different.

12. deposition mask according to claim 11, wherein, the metallic plate described in the effective coverage most Big thickness (h1) is thinner than the maximum gauge (h2) in the non-active area of the metallic plate.

13. deposition mask according to claim 12, wherein, described in the non-active area of the metallic plate The relation of maximum gauge (h2) and the maximum gauge (h1) in the effective coverage of the metallic plate meets 0.2h1< h2<1.0h1。

14. deposition mask according to claim 12, wherein, by being lost on the direction of the thickness of the metallic plate Carve and tension adjustment pattern is set in the non-active area.

15. deposition mask according to claim 14, wherein, the tension adjustment pattern is that metallic plate exists described in thickness ratio The thin half-etched regions of the thickness (h1) in the non-active area.

16. deposition mask according to claim 15, wherein, thickness (h3) and the metallic plate of the half-etched areas The relation of the thickness (h1) in the non-active area meets 0.1h1<h3<1.0h1.

17. deposition mask according to claim 11, wherein, from first table exposed to the surface of the metallic plate A point on the long axis of the opening in face or the second surface hole is extended to positioned at the first surface hole and described the First inclination angle of the line of a point on the boundary member between two surface holes with from exposed to the surface of the metallic plate A point on the minor axis of the opening in the first surface hole or the second surface hole is extended to positioned at the first surface Second inclination angle of the line of the point on the boundary member between hole and the second surface hole is different.

18. deposition mask according to claim 17, wherein, first inclination angle is less than second inclination angle.

19. deposition mask according to claim 18, wherein, first inclination angle is in the range of 20 ° to 80 °.

20. deposition mask according to claim 17, wherein, it is in the effective coverage of the metallic plate and from Realize there is curvature at the first surface jut prominent to the second surface.

21. deposition mask according to claim 20, wherein, the curvature of the jut is equal to or more than 0.5 μm.

22. deposition mask according to claim 20, wherein, in each unit hole, in the first surface and institute State and at least one different height is provided with the relative part of jut.

23. a kind of deposition mask, including：

Metallic plate including etching area and non-etched areas；

First surface hole, depth direction shape of the first surface hole from the first surface of the etching area along the metallic plate Into；

Second surface hole, the depth side of the second surface hole from the second surface of the etching area along the metallic plate It is connected to formation and the second surface hole relative to boundary member with the first surface hole；And

Each of multiple unit holes, the multiple unit hole have a pair of first surface holes being connected to each other and described Second surface hole.

24. deposition mask according to claim 23, wherein, in the unit hole, the table as the first surface The surface that the value of 3rd roughness (Ra3) of surface roughness is equal to or more than the first inner surface as the first surface hole is thick Second roughness of the first roughness (Ra1) of rugosity and the surface roughness of the second inner surface as the second surface hole (Ra2) (Ra represents the mean roughness of target surface).

25. deposition mask according to claim 24, wherein, second roughness (Ra2) is equal to or more than described the One roughness (Ra1).

26. deposition mask according to claim 25, wherein, first inner surface, second inner surface and institute (Ra) for stating first surface is equal to or less than 1.0.

27. deposition mask according to claim 26, wherein, first inner surface, second inner surface and institute Stating first surface has the 10 points of height (Rz) of nao-and micro relief for being equal to or less than 3.0.

28. deposition mask according to claim 23, wherein, the first surface hole in the unit hole or described second The opening of surface holes is with 1.5 μm of linearity.