KR101889165B1 - Deposition mask, method for preparing the same and method for preparing organic electroluminescent device using the deposition mask - Google Patents

Abstract

The present invention relates to an evaporation mask in which a plurality of fine through holes are formed in a metal foil, a metal foil used therefor, a method of manufacturing the same, and a method of manufacturing an organic EL device using the evaporation mask, An Fe-Ni alloy metal foil used as an evaporation mask including 46% by weight of Fe and unavoidable impurities, wherein the metal foil has a pattern formation region and an ignoreness region on at least one surface thereof, Ni alloy metal foil is used as an evaporation mask in which the thickness is thinner and the surface roughness is smaller than that of the metal foil and the ignorable region is located at the edge of the metal foil to surround the pattern forming region.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a mask for vapor deposition, a mask for vapor deposition manufactured thereby, and a method of manufacturing an organic light emitting diode using the same,

The present invention relates to a vapor deposition mask in which a plurality of fine through holes are formed in a metal foil, and a manufacturing method thereof. Further, the present invention relates to a method of manufacturing an organic EL device using the above-mentioned vapor deposition mask.

In recent years, demand for VR (virtual reality) devices has increased along with the popularization of smart devices, and organic EL display devices having fast response speed, wide viewing angle, excellent contrast and low power consumption have been attracting attention . In particular, as VR provides higher realism as resolution increases, the picture quality of VR devices is required to be improved in the future.

In order to manufacture a high-quality organic EL display, it is required to miniaturize pixels of a display device. A method of forming pixels of such an organic EL display device is known as a method of forming a pixel of a desired pattern by using an evaporation mask having through-holes as an array of patterns to be formed. Specifically, an evaporation mask including arrangements of through holes is brought into close contact with an organic EL display substrate to form pixels of an organic material deposited through a vacuum deposition method.

In general, a deposition mask can be manufactured by coating a metal foil with a photoresist film, forming a pattern of the photoresist using a photolithography technique, and then forming a hole (through hole) penetrating the metal foil by wet or dry etching .

When an evaporation mask is manufactured through such an etching method, there arises a problem that etching occurs in the lateral direction from the bottom of the photoresist. When such side etching occurs, when the etching coefficient indicating the ratio of the depth of etching to the depth of the side etching is low, the formation of the adjacent through hole when manufacturing the deposition mask having a fine pattern is affected Therefore, there arises a problem that it becomes impossible to manufacture a mask for vapor deposition of a high-resolution pixel.

In addition, it is technically difficult to form a high-resolution pattern using a relatively thick metal foil at a level of about 50 to 100 mu m while miniaturization of pixels is required. For example, when a through-hole pattern is formed in a thick metal foil, the thickness of the through-hole pattern is thick. Therefore, there is a possibility that precise pattern formation may not be performed due to interference between adjacent patterns in the etching process.

As a solution for solving the above problems, a method of manufacturing a thinner thickness may be possible. However, if the thickness is too thin to 20 탆 or less, the strength is decreased, and there is a possibility that the substrate is deformed and the operation is difficult when the mask is formed.

According to one embodiment of the present invention, there is provided an evacuation mask having improved corrosion coefficient by reducing side etching of a through portion when etching a metal foil to fabricate a vapor deposition mask.

Further, according to another embodiment of the present invention, it is possible to provide an evaporation mask including a metal foil and a fine pattern capable of finely finishing a fine pattern when etching a metal foil for producing an evaporation mask.

Further, it is possible to provide a metal foil and a vapor deposition mask capable of maintaining the strength of the vapor deposition mask when forming the vapor deposition mask having a plurality of through holes based on the metal foil.

In one aspect, the present invention provides a method of making a vapor deposition mask, the method comprising: providing a first face of a Fe-Ni alloy metal foil comprising 34-46 wt% Ni and the balance Fe and inevitable impurities, A metal coating step of coating a second surface with a metal other than Fe-Ni alloy to form a metal coating layer, and an etching step of forming and etching a photoresist pattern on the metal coating layer and forming a through hole, A method of manufacturing a mask is provided.

The metal forming the metal coating layer may be at least one of chromium (Cr), titanium (Ti), nickel (Ni), and oxides thereof.

The metal coating layer may be formed by at least one of electroplating, electroless plating, and dry coating.

The method may further include a polishing step of chemical polishing the first or second surface of the metal foil before the metal coating step.

The chemical polishing may be performed on a pattern forming region where a through hole on a first surface of the metal foil is formed, and the pattern forming region may be formed thinner than an ignorable region that is an edge of the metal foil.

The through hole may be formed by etching at a surface of one of the first surface and the second surface, wherein the other surface does not have a metal coating layer.

The through-hole may be etched at one surface of the first surface or the second surface to form a non-penetrating hole, and the other surface may be etched to communicate with the non-penetrating hole to form a through-hole.

The through holes may be formed by etching at a surface of either the first surface or the second surface to form non-penetrating holes, chemically polishing the other surfaces to communicate with the non-penetrating holes to form through holes, It is preferable that the surface that does not have a metal coating layer.

According to another aspect of the present invention, there is provided an evaporation mask, which comprises a Fe-Ni alloy metal foil containing 34 to 46% by weight of Ni and the balance Fe and unavoidable impurities, The wear mask according to claim 1, wherein the vapor deposition mask comprises a metal coating layer made of a metal other than Fe-Ni alloy on at least one side of the first surface or the second surface.

The metal coating layer may be made of at least one of chromium (Cr), titanium (Ti), nickel (Ni), and oxides thereof.

The metal coating layer may have a thickness of 1 nm or more and 30 nm or less.

The deposition mask may include a pattern formation region having a predetermined pattern of through holes on one surface thereof and an ignorable region of the edge not including the through hole, and the pattern formation region may be thinner than the non-formation region.

The thickness of the pattern forming region may be 5 占 퐉 or more and 15 占 퐉 or less.

The through-hole may include a plurality of stripes formed on the inner wall surface in a direction parallel to the plane of the first surface.

The through hole includes a plurality of stripe patterns formed in the inner wall surface in a direction parallel to the plane of the first surface, and the surface roughness of the pattern forming region may be lower than the surface roughness of the non-pattern region.

According to another aspect of the present invention, there is provided a method of manufacturing an organic EL device, comprising: laminating an evaporation mask according to any one of claims 9 to 15 on an organic EL display substrate as an embodiment; And transferring the mask pattern by vapor deposition.

According to an embodiment of the present invention, in the process of forming the through hole of the mask for vapor deposition, the etch in the lateral direction from the bottom of the photoresist can be suppressed to improve the etch factor, A vapor deposition mask can be manufactured.

According to another embodiment of the present invention, it is possible to provide a metal foil and a vapor deposition mask having high uniformity of fine patterns and high uniformity between patterns by controlling the roughness of the metal foil, which is a raw material of the vapor deposition mask.

Further, according to another embodiment of the present invention, it is possible to maintain the strength of the mask at a high level and improve the workability of the organic EL device manufacturing.

FIG. 1 (a) is a cross-sectional view of a metal foil having a hole formed by etching on a metal foil on which a photoresist pattern is formed, and FIG. 2 And shows a cross section of a metal foil having a hole formed therein. In this case, the dotted line represents the hole shape formed when the present invention is not applied, and the solid line represents the shape of the hole formed when the present invention is applied.
2 is an optical image of a through hole formed in a metal foil when a pattern is formed by etching on a metal foil before and after chemical polishing.
FIG. 3 is a graph schematically showing changes in surface roughness of a metal foil with time of chemical polishing according to an embodiment of the present invention. FIG.
4 is a plan view image of the 3-D profile of the surface of the metal foil with time of chemical polishing.
5 is a perspective view of the 3-D profile of the surface of the metal foil with time of chemical polishing.

Generally, there is a problem that the adhesion between the metal foil and the photoresist at the lower portion of the photoresist used as the etching mask is low and the etching at the lower side of the photoresist occurs in the lateral direction when the surface etching rate of the metal foil is high.

That is, as shown in Fig. 1, when a hole is formed by etching after forming a photoresist pattern on the surface of the metal foil (Fig. 1 (a)), When the etching is performed in the lateral direction, that is, when the etch factor is low, interference between neighboring through holes may occur, so that a mask for a thin film having a fine pattern can not be manufactured. there is a problem.

Accordingly, it is an object of the present invention to provide an evacuation mask capable of preventing the corrosion coefficient from being lowered due to the occurrence of etching in the lateral direction as described above.

First, the present invention uses a metal foil as an evaporation mask. The metal foil of the present invention uses a metal foil of an Fe-Ni alloy. The Fe-Ni alloy is not necessarily limited to this, but an alloy metal foil containing Ni in an amount of 34 to 46% by weight and the balance of Fe and unavoidable impurities may be used.

The Fe-Ni metal foil may be obtained by rolling, or may be a metal foil obtained by an electroforming (electroforming) method.

The rolling method is a method of casting Fe and Ni into ingots and then repeatedly performing rolling and annealing to obtain a metal foil. The Fe-Ni alloy metal foil produced by such a rolling method has a high elongation percentage, There is an advantage that cracks are hard to occur due to smoothness. However, due to the mechanical limitations in manufacturing, it is difficult to manufacture with a width of 1 m or more, and the manufacturing cost is excessively large when the thickness is extremely small (50 μm or less). In addition, even if the metal foil is produced by the rolling method while taking the disadvantage in terms of the manufacturing cost, there is a disadvantage that the average grain size of the structure is poor and the mechanical properties are poor.

On the other hand, in the electroforming method, an electrolytic solution is supplied through a liquid supply nozzle in a gap surrounded by a pair of circular arc-shaped positive and negative electrodes opposed to a rotating cylindrical negative electrode drum in the electrolytic bath, Electrodeposited, removed, and wound up to form a metal foil. The metal foil manufactured by the electroforming method has an advantage that the average grain size is fine and the mechanical properties are excellent. Further, the metal foil is advantageous in that it can be manufactured even at a low manufacturing cost and thus the manufacturing cost is low.

In the case of using a relatively thick metal foil having a thickness of about 50 to 100 mu m as a deposition mask in recent years, since the thickness of the metal foil is thick when forming the through hole pattern, interference between adjacent patterns occurs in the etching process There is a technical difficulty in obtaining a high-resolution pattern, for example, an accurate pattern can not be formed. In the case of using a thin metal foil with a thickness of 20 μm or less, the strength is lowered, There is a problem in that it is accompanied with difficulty in operation and handling.

As described above, the rolled metal foil and the conductive metal foil have the above disadvantages, but there is no problem to be applied to the present invention.

In the case of etching the metal foil as described above, as described above, there is a problem that when the etching speed is high, etching in the direction of corrosion toward the side occurs. In order to prevent such a problem, the present invention forms a metal coating layer made of a metal different from the material of the metal foil on at least one surface of the metal foil.

The metal forming the metal coating layer may be a metal such as chromium (Cr), titanium (Ti), nickel (Ni), or the like, and a coating layer of an oxide of each of these metals may be formed. Furthermore, a metal coating layer formed by mixing two or more of these metals or metal oxides may be formed.

The metal coating layer is resistant to corrosion and has excellent adhesion to photoresist. Accordingly, when the metal coating layer is formed, the adhesion strength between the metal foil and the photoresist for pattern formation can be increased, thereby minimizing the penetration of the etching solution between the metal foil and the photoresist in the etching process, It is possible to prevent over etching of the semiconductor substrate. In addition, since the metal coating layer has strong corrosion resistance, it is possible to minimize the etching from the surface to the side surface of the hole in the pattern etching process of the metal foil. That is, when a metal coating layer of a predetermined metal is included on the surface of the metal foil as in the present invention, the etching to the side surface can be minimized as shown in Fig.

The metal coating layer may be formed by electroplating, electroless plating, or dry coating, and the specific coating method may be formed by a commonly used method. Further, two or more of the above methods may be mixed and applied.

The metal coating layer is preferably formed to a thickness of 1 nm or more and 30 nm or less. When the thickness of the metal coating layer is less than 1 nm, the thickness is too thin to uniformly form a coating layer on the surface of the electrochromic metal foil. As a result, the effect obtained by the formation of the metal coating layer is not sufficiently exhibited. There is a problem that the thickness is too thick and the etching in the depth direction is weakened during the etching process.

In the case of using a relatively thick metal foil having a thickness of about 50 to 100 mu m as a deposition mask in recent years, since the thickness of the metal foil is thick when forming the through hole pattern, interference between adjacent patterns occurs in the etching process There is a technical difficulty in obtaining a high-resolution pattern, for example, an accurate pattern can not be formed. In the case of using a thin metal foil with a thickness of 20 μm or less, the strength is lowered, There is a problem in that it is accompanied with difficulty in operation and handling.

In addition, when a conductive metal foil is used as a material for manufacturing a mask for vapor deposition, the metal foil has a high roughness, and if the surface roughness is high, there are many problems in forming a fine pattern through hole. For example, when a photoresist pattern is formed on a high-roughness plane, the pattern is distorted and a normal shape is not formed. When the etching is performed on such a pattern, the outline forming the pattern is formed nonlinearly. As a result, the through hole is distorted, and the shape of the organic material deposited by using this is deviated from the shape which was originally intended to be formed, and the nonuniformity of the shape is enlarged as a whole.

It is more preferable to perform chemical polishing on the rolled metal foil as well as the rolled metal foil before forming the metal coating layer on the surface of the foil. By performing such chemical polishing, the thickness of the metal foil can be made thin. In particular, in the case of the metal foil, the patterning property can be improved more precisely by lowering the surface roughness. The chemical polishing is not particularly limited as it can be performed on one side or both sides of the metal foil.

At this time, the chemical polishing of the metal foil may be performed to the entire surface, or the chemical polishing may be partially performed on the region where the through-hole is formed, that is, the pattern forming region. The partial chemical polishing can lower the surface roughness of the surface of the metal foil and make it uniform, and it is possible to maintain the overall rigidity of the vapor deposition mask obtained thereby, thereby contributing to improvement in workability.

When the chemical polishing is partially performed, chemical polishing is performed on a pattern forming region where a pattern of through holes is formed with respect to one surface of the metal foil except the edge of the metal foil. By such chemical polishing, the pattern forming region can be formed with a thickness suitable for forming the through-hole precisely.

Particularly, when the metal foil has a high surface roughness, as in the case of the former metal foil obtained by the electroforming method, the surface roughness can be lowered by such chemical polishing, whereby when the through hole pattern is formed by etching, It can be prevented that it is formed non-linearly.

On the other hand, the edge of the metal foil is maintained in the non-metal region without performing the chemical polishing, so that the metal foil can be provided with the overall mechanical strength, thereby ensuring ease of handling at the time of operation. More specifically, the mask can be prevented from being squashed during the handling of the mask, and in manufacturing the organic EL display, the mask is fixed to the inverted frame. The edge uncovered area provides rigidity, Can be suppressed, and more precise pattern transfer can be performed.

At this time, the chemical polishing is partially performed on the region where the through-hole is formed, that is, the pattern forming region, and the edge of the mask where no mask pattern is formed is not performed, You may.

In the case of performing the partial chemical polishing of the surface of the electroforming foil as described above, the pattern forming region is polished by chemical polishing, so that the pattern forming region is thinner than the non-patterning region, Let's do it. This makes it possible to form a precise through hole pattern even when the front surface is chemically polished and formed to have a predetermined thickness.

In this case, the chemical polishing can perform the chemical polishing so as to have a thickness enough to precisely form the hole pattern. Therefore, the thickness is not particularly limited, but may be, for example, a thickness of 5 to 40 탆, Chemical polishing may be performed so as to have a thickness of 5 to 15 mu m. If the thickness is within the above range, the hole can be realized more easily with high precision.

The thickness control of the pattern forming region by the chemical polishing can be formed to have a thickness of about 25 to 88% with respect to the thickness of the metal foil provided as the material, that is, the thickness of the non-woven region. In the case of having a thickness larger than that, the thickness reduction of the pattern forming region due to chemical polishing is small, and the advantage obtained in forming the hole pattern due to this is small. When the thickness is smaller than that, However, it is time consuming relative to chemical polishing, and contributes little to further surface planarization in terms of lowering surface roughness.

Further, the surface of the pattern formation region is planarized by such chemical polishing, and has a significantly lower surface roughness value than the non-pattern region. As the time to perform chemical polishing increases, surface roughness value decreases and contributes to surface planarization, but the degree tends to decrease gradually.

For example, FIG. 3 is a graph schematically showing changes in surface roughness of a metal foil with time of chemical polishing obtained in Example 3 below. As can be seen from FIG. 3, both Ra and Rz tend to decrease as the chemical polishing time increases. In the present invention, the surface roughness by chemical polishing is 30 to 80% with respect to the surface roughness value of the non-region, and in the present invention, the surface roughness of the pattern- The chemical polishing is carried out so as to have a value of

A through hole can be formed by forming a metal coating layer after chemical polishing and forming a photoresist pattern on a surface of the metal foil on which the metal coating layer is formed according to a predetermined pattern and etching.

At this time, the formation of the through-hole is not particularly limited, but a through-hole can be formed by etching one surface of the metal foil. At this time, it is preferable in view of the process economy to form the metal coating layer only on the side to be etched. However, the formation of the metal coating layer on the other surface is not denied.

On the other hand, a hole is formed on one surface of the metal foil on which the metal coating layer is formed by etching, and a through hole is formed by communicating with the non-through hole formed by etching the other surface. At this time, it is preferable to form a metal coating layer on both surfaces, but it is also possible to form a through hole only on one surface.

In addition, a hole may be formed on one surface of the metal foil on which the metal coating layer is formed by forming a through hole and chemically polishing the entire surface of the other surface to communicate with the non-through hole to form a through hole. have. At this time, it will be understood that it is more preferable that no metal coating layer is formed on the other surface where chemical polishing is performed.

When the Fe-Ni alloy metal foil is a metal foil obtained by the electroforming method, it can be confirmed that a plurality of stripe patterns are formed on the inner wall surface of the through-hole. The plurality of stripes formed in the planar direction can be formed inside the metal foil manufactured through the electric pole as a part that plays an important role in obtaining a beautiful surface in polishing the surface layer in a layered manner during the preceding chemical polishing.

The mask obtained according to the present invention can be manufactured by stacking an organic EL display substrate and subjecting the organic substance to be deposited to vacuum evaporation in the same pattern as the mask.

For example, when depositing an organic material using the deposition mask according to the present invention, the deposition mask is attached to a substrate to be deposited. For this purpose, the deposition mask is fixed to the thick inert frame. In the mask for vapor deposition according to the present invention, the pattern forming region has a very thin thickness, and the through hole pattern can be precisely formed. As a matter of course, since the ignorable region exists at the edge, the strength of the mask as a whole can be increased, thereby reducing the defect rate and improving the operating efficiency at the time of manufacturing.

Example

Hereinafter, the present invention will be described in more detail with reference to examples. However, the following embodiments are illustrative of the present invention, and thus the present invention is not limited thereto.

Example  One

A chromium plating layer having a thickness of 2 nm was formed on one surface of an Fe-Ni alloy metal foil (thickness: 15 mu m) containing 34 to 46 wt% of Ni produced by the electrolytic plating method by electrolytic plating.

The chromium plating layer used was a sulfate-based trivalent chromium plating solution using chromium sulfate (Cr (SO ₄ ) ₃ .nH ₂ O) as a source of chromium ions. The chromium ion concentration in the plating solution was 150 g / l and the sulfate ion concentration was 2 wt% based on the chromium ion concentration. Sodium sulfate was added in an amount of 50 g / l as a conductive auxiliary agent.

Further, the Fe-Ni alloy metal foil was immersed in the plating solution while maintaining the plating solution at a pH of 2.0 and a temperature of 50 ° C, a negative potential was applied to the metal foil, and a positive potential was applied to the titanium insoluble anode in the plating bath to form a chromium plating layer . At this time, the current density was set to 2 A / dm ³ .

A photoresist pattern was formed on the surface of the chromium plated layer according to a predetermined pattern, and etching was performed. The size of the photoresist pattern was 20 mu m and the interval was also 20 mu m.

After the etching, the formed hole size was measured, and the results are shown in Table 1 below.

On the other hand, for comparison, holes were formed by etching in the same manner, except that the Cr coating layer was not formed, and the results are shown in Table 1 below.

Cr layer thickness (nm) Actual size of pattern (㎛) Depth of hole (탆) Corrosion coefficient Comparative Example 1 0 27.01 6.1 1.81 Inventory 1 2 24.79 5.8 2.81 Inventory 2 5 24.39 5.7 2.9 Inventory 3 10 24.2 6.0 3.13 Honorable 4 20 24.2 5.9 3.16 Inventory 5 25 24.2 6.0 3.13 Comparative Example 2 30 24.1 2.6 1.42

As a result of the etching, the photoresist coated on the surface was removed. As a result, it was found that the size of the actual pattern as compared with the size of the photoresist pattern was the side etching at the bottom of the photoresist.

Thus, in the case of Inventive Examples 1 to 5, the actual size of the pattern formed by etching was maintained to be somewhat constant near 24 탆, and the corrosion coefficient was a relatively large value of 2.8 or more in relation to the depth of the hole. The results of Inventive Example 3 are shown in Figs. 2 (c) and 2 (d).

On the other hand, in the case where the Cr coating layer of Comparative Example 1 was not included, the photoresist coated on the surface after etching was removed to confirm that the actual pattern size was 27.01 탆 and the side etching was significantly observed in the lower portion of the photoresist . The pattern shapes of holes formed according to the results are shown in Figs. 2 (a) and 2 (b).

On the other hand, in the case of Comparative Example 2 in which the Cr coating layer was formed thick to 30 nm, the side etching was fairly good with an actual pattern size of 24.1 占 퐉, but the etching depth was 2.6 占 퐉 and the etching amount was remarkably small. Is low, and the etching efficiency is lowered.

From these results, it can be seen that the side etching is largely observed in the case of the electroformed metal foil not coated with Cr, but when the Cr layer is coated at a thickness of 2 nm or more, the actual pattern size is remarkably reduced as compared with Comparative Example 1 in which the Cr layer is not included Could know. 2 (a) and 2 (b) showing the pattern of Comparative Example 1 and FIG. 2 (b) showing the pattern of Inventive Example 3, which can be confirmed by comparing the pattern sizes of Comparative Example 1 and Inventive Example 3 shown in FIG. (C) and (d), it can be seen that the side etching is small when the pattern is formed by etching when the Cr coating layer is provided.

This seems to be due to suppression of side etching of the metal foil when a thin layer of Cr is coated on the surface of the metal foil.

However, as in Comparative Example 2, when the thickness of the coating layer is more than necessary, the formation of holes by etching is not smooth.

Example  2

The Fe-Ni alloy metal foil (thickness: 15 탆) containing 34 to 46% by weight of Ni produced by the electroplating method was subjected to chemical polishing using a polishing liquid (13.5% by weight of sulfuric acid, 1.5% by weight of hydrogen peroxide and 85% by weight of pure water) Respectively. The chemical polishing proceeds at a surface etching rate of 0.2 mu m / sec, and the chemical polishing execution time is adjusted as shown in Table 1 below.

The surface roughnesses Ra and Rz of the metal foils thus obtained were measured. The results are shown in Table 2. This is also shown graphically in Fig.

Polishing time (sec) Ra (탆) Rz (占 퐉) Comparative Example 1 0 0.302 3.832 Inventory 1 5 0.150 1.242 Inventory 2 10 0.115 0.905 Inventory 3 15 0.105 0.736 Honorable 4 20 0.090 0.649

From Table 2 and FIG. 3, it can be seen that the surface roughness can be remarkably lowered according to the polishing time.

Further, 3-D profiler images of the surface shapes of the obtained metal foils are shown in FIGS. 4 and 5, respectively. 4 is a top view image of a 3-D profiler on a surface, and FIG. 5 is a perspective view image of a 3-D profiler on a surface.

4 and 5, it was found that the morphology of the surface became smooth according to the polishing time.

Claims (16)

Chemical polishing is performed on the pattern forming region where the through-holes of the first surface of the Fe-Ni alloy metal foil containing Ni: 34 to 46 wt% and the remainder Fe and inevitable impurities are formed to form an ignorable region A chemical polishing step of forming the surface roughness lower than the surface roughness;
A metal coating step of coating a first surface of the Fe-Ni alloy metal foil with a metal other than Fe-Ni alloy to form a metal coating layer; And
A photoresist pattern is formed on the metal coating layer and is etched to form an etching step for forming a through hole
Wherein the deposition mask includes a pattern formation region in which a predetermined pattern of through holes are formed in the first surface and an ignorable region in an edge that does not include the through hole, Wherein the mask has a lower value than the surface roughness.
The method of claim 1, wherein the metal forming the metal coating layer is at least one of chromium (Cr), titanium (Ti), nickel (Ni), and oxides thereof.
The method of claim 1, wherein the metal coating layer is formed by at least one of electroplating, electroless plating, and dry coating.
delete The method of claim 1, wherein the pattern forming region is thinner than an uncoated region at an edge of the metal foil.
The method according to any one of claims 1 to 3 and 5, wherein the through-holes are formed by etching at a surface of one of the first surface and the second surface, and the other surface is formed by not having a metal coating layer A method of manufacturing a wearing mask.
6. The semiconductor device according to any one of claims 1 to 5, wherein the through-hole is etched at the surface of the first surface to form a non-through hole, and the other surface is etched to communicate with the non- Thereby forming a hole.
The method according to any one of claims 1 to 5, wherein the through hole is formed by etching at a surface of either the first surface or the second surface to form a through hole, and chemically polishing the other surface And a through hole is formed by communicating with the non-penetrating hole, wherein the chemical polishing surface has no metal coating layer.
An evaporation mask having a through-hole of a predetermined pattern formed on an Fe-Ni alloy metal foil containing 34 to 46% by weight of Ni and the balance Fe and inevitable impurities,
Wherein the deposition mask comprises a metal coating layer made of a metal other than Fe-Ni alloy on the first surface,
Wherein the first surface includes a pattern forming region in which a through hole of a predetermined pattern is formed and an ignorable region of an edge that does not include the through hole, wherein the surface roughness of the pattern forming region is lower than the surface roughness of the non- Authentication mask.
The vapor deposition mask according to claim 9, wherein the metal coating layer is made of at least one of chromium (Cr), titanium (Ti), nickel (Ni), and oxides thereof.
The mask according to claim 9, wherein the metal coating layer has a thickness of 1 nm or more and 30 nm or less.
10. The mask according to claim 9, wherein the pattern forming region is thinner than the non-pattern region.
13. An evacuation mask according to claim 12, wherein the thickness of the pattern formation region is 5 占 퐉 or more and 15 占 퐉 or less.
10. The mask according to claim 9, wherein the through-hole includes a plurality of stripes formed in an inner wall surface in a direction parallel to the plane of the first surface.
delete A method for manufacturing an organic EL device, comprising: laminating an evaporation mask according to any one of claims 9 to 14 on an organic EL display substrate, and vacuum-depositing an organic substance to be evaporated, thereby transferring the mask pattern.

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