CN107708919B - 合金化银线 - Google Patents

合金化银线 Download PDF

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Publication number
CN107708919B
CN107708919B CN201680032776.9A CN201680032776A CN107708919B CN 107708919 B CN107708919 B CN 107708919B CN 201680032776 A CN201680032776 A CN 201680032776A CN 107708919 B CN107708919 B CN 107708919B
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China
Prior art keywords
wire
range
core
alloyed silver
silver wire
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CN201680032776.9A
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Chinese (zh)
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CN107708919A (zh
Inventor
卓永德
姜逸泰
金忠秀
郑贤硕
金泰叶
张兮
穆拉利·萨兰加帕尼
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Heraeus Deutschland GmbH and Co KG
Heraeus Materials Singapore Pte Ltd
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Heraeus Precious Metals GmbH and Co KG
Heraeus Materials Singapore Pte Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
    • B23K35/0261—Rods, electrodes, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/0266—Rods, electrodes, wires flux-cored
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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
TWI762342B (zh) * 2021-06-03 2022-04-21 國立臺灣大學 形成接合結構的方法
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002023618A1 (fr) * 2000-09-18 2002-03-21 Nippon Steel Corporation Fil de connexion de semi-conducteur et son procede de fabrication
CN101828255A (zh) * 2007-12-03 2010-09-08 新日铁高新材料株式会社 半导体装置用接合线
CN103131885A (zh) * 2011-11-21 2013-06-05 赫劳斯材料工艺有限及两合公司 用于半导体器件的接合线
CN103155130A (zh) * 2011-02-10 2013-06-12 田中电子工业株式会社 Ag-Au-Pd三元合金接合线
CN103681568A (zh) * 2012-09-04 2014-03-26 赫劳斯材料工艺有限及两合公司 用于接合应用的银合金引线
WO2014107040A1 (ko) * 2013-01-04 2014-07-10 엠케이전자 주식회사 은 합금 본딩 와이어
CN104157625A (zh) * 2013-05-14 2014-11-19 田中电子工业株式会社 高速信号线用接合线
WO2015034287A1 (ko) * 2013-09-04 2015-03-12 엠케이전자 주식회사 은 합금 본딩 와이어 및 그의 제조 방법
CN104781920A (zh) * 2012-09-05 2015-07-15 Mk电子株式会社 半导体器件用接合线及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150322586A1 (en) * 2011-11-26 2015-11-12 Microbonds Inc. Bonding wire and process for manufacturing a bonding wire
US8940403B2 (en) * 2012-01-02 2015-01-27 Wire Technology Co., Ltd. Alloy wire and methods for manufacturing the same
EP2927955A1 (en) * 2013-02-15 2015-10-07 Heraeus Materials Singapore Pte. Ltd. Copper bond wire and method of manufacturing the same
KR101513493B1 (ko) * 2013-02-19 2015-04-20 엠케이전자 주식회사 은 합금 본딩 와이어
WO2014178792A1 (en) * 2013-05-03 2014-11-06 Heraeus Materials Singapore Pte., Ltd. Copper bond wire and method of making the same
CN104372197A (zh) * 2014-09-26 2015-02-25 四川威纳尔特种电子材料有限公司 半导体封装用银合金线及其制备方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002023618A1 (fr) * 2000-09-18 2002-03-21 Nippon Steel Corporation Fil de connexion de semi-conducteur et son procede de fabrication
CN101828255A (zh) * 2007-12-03 2010-09-08 新日铁高新材料株式会社 半导体装置用接合线
CN103155130A (zh) * 2011-02-10 2013-06-12 田中电子工业株式会社 Ag-Au-Pd三元合金接合线
CN103131885A (zh) * 2011-11-21 2013-06-05 赫劳斯材料工艺有限及两合公司 用于半导体器件的接合线
CN103681568A (zh) * 2012-09-04 2014-03-26 赫劳斯材料工艺有限及两合公司 用于接合应用的银合金引线
CN104781920A (zh) * 2012-09-05 2015-07-15 Mk电子株式会社 半导体器件用接合线及其制造方法
WO2014107040A1 (ko) * 2013-01-04 2014-07-10 엠케이전자 주식회사 은 합금 본딩 와이어
CN104157625A (zh) * 2013-05-14 2014-11-19 田中电子工业株式会社 高速信号线用接合线
WO2015034287A1 (ko) * 2013-09-04 2015-03-12 엠케이전자 주식회사 은 합금 본딩 와이어 및 그의 제조 방법

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JP6509383B2 (ja) 2019-05-08
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