TWI775576B - 經塗覆線材 - Google Patents
經塗覆線材 Download PDFInfo
- Publication number
- TWI775576B TWI775576B TW110131016A TW110131016A TWI775576B TW I775576 B TWI775576 B TW I775576B TW 110131016 A TW110131016 A TW 110131016A TW 110131016 A TW110131016 A TW 110131016A TW I775576 B TWI775576 B TW I775576B
- Authority
- TW
- Taiwan
- Prior art keywords
- wire
- gold
- range
- layer
- coated
- Prior art date
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052737 gold Inorganic materials 0.000 claims abstract description 79
- 239000010931 gold Substances 0.000 claims abstract description 79
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 59
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 53
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052709 silver Inorganic materials 0.000 claims abstract description 41
- 239000004332 silver Substances 0.000 claims abstract description 41
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 29
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 26
- 238000000576 coating method Methods 0.000 claims abstract description 25
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 57
- 239000002243 precursor Substances 0.000 claims description 55
- 238000009713 electroplating Methods 0.000 claims description 31
- 238000000137 annealing Methods 0.000 claims description 26
- 229910052787 antimony Inorganic materials 0.000 claims description 18
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 18
- 229910052785 arsenic Inorganic materials 0.000 claims description 14
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052797 bismuth Inorganic materials 0.000 claims description 14
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 14
- 229910052714 tellurium Inorganic materials 0.000 claims description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 abstract description 7
- 229910001316 Ag alloy Inorganic materials 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000005275 alloying Methods 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 229910052703 rhodium Inorganic materials 0.000 description 7
- 239000010948 rhodium Substances 0.000 description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 238000010265 fast atom bombardment Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000013590 bulk material Substances 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000001887 electron backscatter diffraction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910006147 SO3NH2 Inorganic materials 0.000 description 1
- -1 Sb 2 O 3 Chemical class 0.000 description 1
- 241000489999 Streptanthus Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical group 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/027—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal matrix material comprising a mixture of at least two metals or metal phases or metal matrix composites, e.g. metal matrix with embedded inorganic hard particles, CERMET, MMC.
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/50—Electroplating: Baths therefor from solutions of platinum group metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0607—Wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0016—Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/02—Single bars, rods, wires, or strips
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/48—Electroplating: Baths therefor from solutions of gold
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/62—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45572—Two-layer stack coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12875—Platinum group metal-base component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Wire Bonding (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Insulated Conductors (AREA)
- Resistance Heating (AREA)
Abstract
本發明係關於一種線材，其包含基於銀之線材核心，具有包含1至100 nm厚的鈀或鎳內層及1至250 nm厚的相鄰金外層之雙層塗層，其中該線材表現出固有特性A1)至A3)中之至少一者：
A1)沿縱向量測之線材核心中晶粒之平均晶粒尺寸在0.7至1.1 µm之範圍內；
A2)沿線材縱向量測之孿晶間界之分率在5%至40%之範圍內；
A3)線材核心之20%至70%之晶粒以＜100＞方向取向，且線材核心之3%至40%之晶粒以＜111＞方向取向，各%相對於與線材之拉伸方向平行取向之晶粒總數。
Description
本發明係關於一種經塗覆線材，其包含基於銀之線材核心及疊加於該線材核心之表面上之塗層。本發明進一步係關於用於製造此類經塗覆線材之方法。
在電子及微電子應用中使用接合線材為眾所周知的目前先進技術。儘管接合線材一開始由金製成，但如今使用較便宜之材料，諸如銅、銅合金、銀及銀合金。此類線材可具有金屬塗層。
關於線材幾何結構，最常見的為具有圓形橫截面之接合線材及具有近乎矩形橫截面之接合帶。兩種類型之線材幾何結構具有其優勢，使其適用於特定應用。
本發明之一目標為提供適用於線材接合應用之基於銀之經塗覆線材，此線材除滿足基本要求，如線材柔軟性、在空氣氛圍下形成FAB (無空氣焊球)之可行性及耐腐蝕性以及抗氧化性之外，亦特別在防止花型接合球、防止自線軸退繞時之線材扭曲以及關於線材搖擺之穩定繞線行為方面表現突出。
對該目標解決方案之貢獻係由形成類別之申請專利範圍的主題提供。形成類別之申請專利範圍的從屬性附屬項表示本發明之較佳實施例，其主題亦對解決上文提及之目標作出貢獻。
本發明係關於一種線材，其包含具有表面之線材核心(下文中亦簡稱為「核心」)，該線材核心具有疊加於其表面上之塗層，其中該線材核心本身為基於銀之線材核心，其中該塗層為由1至100 nm厚的鈀或鎳內層及1至250 nm厚的相鄰金外層構成之雙層，其中該線材表現出以下固有特性A1)至A3)中之至少一者(參見如下文所述之「測試方法A及B」)：
A1)沿縱向量測之線材核心中晶粒之平均晶粒尺寸在0.7至1.1 µm之範圍內；
A2)沿線材縱向量測之孿晶間界之分率在5%至40%之範圍內；
A3)線材核心之20%至70%之晶粒以＜100＞方向取向，且線材核心之3%至40%之晶粒以＜111＞方向取向，各%相對於與線材之拉伸方向平行取向之晶粒總數。
術語「固有特性」在本文中關於本發明之線材使用。固有特性意謂線材本身具有之特性(獨立於其他因素)，而非固有特性取決於線材與其他外部因素之關係或相互作用。
本發明之線材較佳為在微電子中用於接合之接合線材。其較佳為單體式物品。對於本發明，術語「接合線材」包含具有圓形橫截面及細直徑之接合線材。平均橫截面在例如50至5024 µm
2或較佳110至2400 µm
2之範圍內；因此，平均直徑在例如8至80 µm或較佳12至55 µm之範圍內。
可藉由「量尺寸方法」獲得線材或線材核心之平均直徑或簡言之直徑。根據此方法，測定限定長度之線材的實體重量。基於此重量，使用線材材料的密度計算線材或線材核心之直徑。直徑計算為對特定線材之五個切面之五個量測值的算術平均值。
線材核心為基於銀之線材核心；亦即線材核心由呈(a)摻雜銀、(b)銀合金或(c)摻雜銀合金形式之基於銀之材料組成。
本文中所用之術語「摻雜銀」意謂由以下組成之基於銀之材料：(a1)銀，其量在＞99.49至99.997 wt.-%之範圍內；(a2)除銀以外之至少一種摻雜元素，其總量為30至＜5000 wt.-ppm；及(a3)其他組分(除銀及至少一種摻雜元素以外之組分)，其總量為0至100 wt.-ppm。在一較佳實施例中，本文中所用之術語「摻雜銀」意謂由以下組成之摻雜銀：(a1)銀，其量在＞99.49至99.997 wt.-%之範圍內，(a2)至少一種選自由鈣、鎳、鉑、鈀、金、銅、銠及釕組成之群的摻雜元素，其總量為30至＜5000 wt.-ppm，及(a3)其他組分(除銀、鈣、鎳、鉑、鈀、金、銅、銠及釕之外的組分)，其總量為0至100 wt.-ppm。
本文中所用之術語「銀合金」意謂由以下組成之基於銀之材料：(b1)銀，其量在89.99至99.5 wt.-%，較佳97.99至99.5 wt.-%之範圍內；(b2)至少一種合金元素，其總量在0.5至10 wt.-%，較佳0.5至2 wt.-%之範圍內；及(b3)其他組分(除銀及至少一種合金元素之外的組分)，其總量為0至100 wt.-ppm。在一較佳實施例中，本文中所用之術語「銀合金」意謂由以下組成之銀合金：(b1)銀，其量在89.99至99.5 wt.-%，較佳97.99至99.5 wt.-%之範圍內，(b2)至少一種選自由鎳、鉑、鈀、金、銅、銠及釕組成之群的合金元素，其總量在0.5至10 wt.-%，較佳0.5至2 wt.-%之範圍內，及(b3)其他組分(除銀、鎳、鉑、鈀、金、銅、銠及釕之外的組分)，其總量為0至100 wt.-ppm。
本文中所用之術語「摻雜銀合金」意謂由以下組成之基於銀之材料：(c1)銀，其量在89.49至99.497 wt.-%，較佳97.49至99.497 wt.-%之範圍內，(c2)至少一種摻雜元素，其總量為30至＜5000 wt.-ppm，(c3)至少一種合金元素，其總量在0.5至10 wt.-%，較佳0.5至2 wt.-%之範圍內，及(c4)其他組分(除銀、至少一種摻雜元素及至少一種合金元素之外的組分)，其總量為0至100 wt.-ppm，其中至少一種摻雜元素(c2)係除至少一種合金元素(c3)之外的元素。在一較佳實施例中，本文中所用之術語「摻雜銀合金」意謂由以下組成之摻雜銀合金：(c1)銀，其量在＞89.49至99.497 wt.-%，較佳97.49至99.497 wt.-%之範圍內，(c2)至少一種選自由鈣、鎳、鉑、鈀、金、銅、銠及釕組成之群的摻雜元素，其總量為30至＜5000 wt.-ppm，(c3)至少一種選自由鎳、鉑、鈀、金、銅、銠及釕組成之群的合金元素，其總量在0.5至10 wt.-%，較佳0.5至2 wt.-%之範圍內，及(c4)其他組分(除銀、鈣、鎳、鉑、鈀、金、銅、銠及釕之外的組分)，其總量為0至100 wt.-ppm，其中至少一種摻雜元素(c2)係除至少一種合金元素(c3)之外的元素。
本發明提及「其他組分」及「摻雜元素」。任何其他組分之單獨量小於30 wt.-ppm。任何摻雜元素之單獨量為至少30 wt.-ppm。所有以wt.-%及wt.-ppm表示之量係按核心或其前驅體物品或拉長的前驅體物品之總重量計。
本發明之線材核心可包含總量在0至100 wt.-ppm範圍內，例如，10至100 wt.-ppm之所謂的其他組分。在本發明上下文中，其他組分，通常亦稱為「不可避免之雜質」，為源自所用原料中所存在之雜質或源自線材核心製造方法的少量化學元素及/或化合物。其他組分之0至100 wt.-ppm的低總量確保線材特性之良好再現性。通常不分開添加存在於核心中之其他組分。按線材核心之總重量計，各單獨其他組分之含量小於30 wt.-ppm。
線材之核心為散裝材料之均質區域。由於任何散裝材料始終具有可在一定程度上表現出不同特性之表面區域，因此線材之核心的特性被理解為散裝材料之均質區域的特性。散裝材料區域之表面可在形態、組成(例如，硫、氯及/或氧含量)及其他特徵方面不同。表面為線材核心與疊加於線材核心上之塗層之間的界面區域。通常，塗層完全疊加於線材核心之表面上。在線材核心與疊加於其上之塗層之間的線材區域中，可存在核心及塗層兩者之材料之組合。
疊加於線材核心之表面上的塗層為雙層，由1至100 nm厚、較佳1至30 nm厚的鈀或鎳內層及1至250 nm厚、較佳20至200 nm厚的相鄰金外層構成。在此情形下，術語「厚」或「塗層厚度」意謂塗層在與核心縱向軸線垂直的方向上之尺寸。
本發明之線材表現出以下固有特性A1)至A3)中之至少一者：
A1)沿縱向量測之線材核心中晶粒之平均晶粒尺寸在0.7至1.1 µm之範圍內；
A2)沿線材縱向量測之孿晶間界之分率在5%至40%、較佳10%至40%之範圍內；
A3)線材核心之20%至70%、較佳30%至70%、最佳30%至60%之晶粒以＜100＞方向取向，且線材核心之3%至40%、較佳3%至30%、最佳5%至20%之晶粒以＜111＞方向取向，各%相對於與線材之拉伸方向平行取向之晶粒總數。
較佳地，本發明之線材表現出固有特性A1)至A3)中之至少兩者。更佳地，本發明之線材表現出所有的固有特性A1)至A3)。
在一有利實施例中，金層包含至少一個選自由銻、鉍、砷及碲組成之群的成員，其總比例以本發明之線材的重量計，在10至300 wt.-ppm、較佳10至150 wt.-ppm之範圍內。同時，在一實施例中，按金層之金之重量計，至少一個選自由銻、鉍、砷及碲組成之群的成員之總比例在300至9500 wt.-ppm、較佳300至5000 wt.-ppm、最佳600至3000 wt.-ppm之範圍內。
在有利實施例內，銻存在於金層內為較佳的，且銻單獨存在於金層內為更佳的，亦即，鉍、砷及碲不同時存在。換言之，在有利實施例之一最佳變體中，按線材(線材核心加塗層)之重量計，金層包含比例在10至300 wt.-ppm、較佳10至150 wt.-ppm範圍內之銻，而鉍、砷及碲不存在於金層中；同時，在一實施例中，按金層之金之重量計，銻之比例可在300至9500 wt.-ppm、較佳300至5000 wt.-ppm、最佳600至3000 wt.-ppm之範圍內。
在一實施例中，至少一個選自由銻、鉍、砷及碲組成之群的成員可在金層內表現出濃度梯度，該梯度在朝向線材核心之方向上，亦即在線材核心縱向軸線之垂直方向上遞增。
在另一態樣中，本發明亦關於一種用於製造上文所揭示之實施例中之任一者中的本發明之經塗覆線材的方法。該方法至少包含步驟(1)至(5)：
(1)提供基於銀之前驅體物品，
(2)拉長該前驅體物品以形成拉長的前驅體物品，直至獲得在30至200 µm範圍內之中間直徑，
(3)將鈀或鎳內層及相鄰金外層之雙層塗層施加至在完成方法步驟(2)後獲得的拉長的前驅體物品之表面上，
(4)進一步拉長在完成方法步驟(3)後獲得的經塗覆前驅體物品，直至獲得所需最終直徑以及由所需最終厚度在1至100 nm範圍內之鈀或鎳內層及所需最終厚度在1至250 nm範圍內之相鄰金外層構成的雙層，及
(5)最後將在完成方法步驟(4)後獲得的經塗覆前驅體在＞400至460℃範圍內之烘箱設定溫度下進行絲束退火，曝露時間在≥0.8至10秒、較佳≥0.8至2秒之範圍內，以形成經塗覆線材，
其中步驟(2)可包括一或多個子步驟，亦即在200至650℃之烘箱設定溫度下對前驅體物品進行中間分批退火，曝露時間在30至300分鐘之範圍內，較佳地烘箱設定溫度在300至500℃下，曝露時間在60至180分鐘之範圍內。
在本文中使用術語「絲束退火」。其為允許快速生產具有高再現性之線材的連續製程。在本發明之情形下，絲束退火意謂以動態方式進行退火，同時牽引或移動待退火之經塗覆前驅體通過習知退火烘箱，且在已離開退火烘箱之後繞線於線軸上。此處，退火烘箱通常呈給定長度之圓柱管形式。根據其在給定退火速度條件下之限定溫度概況，該速度可在10至60公尺/分鐘之範圍內選擇，可界定且設定退火時間/烘箱溫度參數。
在本文中使用術語「烘箱設定溫度」。其意謂退火烘箱之溫度控制器中所固定之溫度。退火烘箱可為腔室爐型烘箱(在分批退火之情況下)或管狀退火烘箱(在絲束退火之情況下)。
本發明在前驅體物品、拉長的前驅體物品、經塗覆前驅體物品、經塗覆前驅體及經塗覆線材之間加以區分。術語「前驅體物品」用於尚未達到線材核心之所需最終直徑之彼等線材之前階段，而術語「前驅體」用於在達到所需最終直徑下之線材之前階段。在完成方法步驟(5)後，亦即在經塗覆前驅體以所需最終直徑進行最後的絲束退火後，獲得本發明意義上之經塗覆線材。
如方法步驟(1)中所提供之前驅體物品為基於銀之前驅體物品；亦即前驅體物品由(a)摻雜銀、(b)銀合金或(c)摻雜銀合金組成。關於術語「摻雜銀」、「銀合金」及「摻雜銀合金」之含義，參考前文之揭示內容。
在基於銀之前驅體物品之實施例中，後者可藉由用所需量之所需組分對銀進行合金化、摻雜或合金化及摻雜來獲得。摻雜銀或銀合金或摻雜銀合金可藉由熟習金屬合金領域之普通技術人員已知的習知製程來製備，例如藉由將組分以所需成比例比率熔融在一起來製備。在此情況下，有可能使用一或多種習知母合金。可例如使用感應爐進行熔融製程，且有利的是在真空下或在惰性氣體氛圍下操作。所用材料可具有例如99.99 wt.-%及更高之純度等級。可冷卻如此產生之熔融物以形成基於銀之前驅體物品之均質片件。通常，此類前驅體物品呈棒形式，其具有例如2至25 mm之直徑及例如2至100 m之長度。此類棒可藉由使用適當模具連續鑄造基於銀之熔融物，隨後冷卻及固化製得。
在方法步驟(2)中，基於銀之前驅體物品經拉長以形成拉長的前驅體物品，直至獲得在30至200 µm之範圍內的中間直徑。拉長前驅體物品之技術為已知的，且在本發明之情況下似乎有用。較佳技術為輥壓、鍛造、模拉伸或類似技術，其中模拉伸尤佳。在後一情況中，以若干製程步驟拉伸前驅體物品，直至達到所需中間橫截面或所需中間直徑。熟習此項技術者熟知此線材拉伸方法。可使用習知碳化鎢及金剛石拉伸模，且可使用習知拉伸潤滑劑以支持拉伸。
本發明方法之步驟(2)可包括一或多個子步驟，亦即在200至650℃之烘箱設定溫度下對拉長的前驅體物品進行中間分批退火，曝露時間在30至300分鐘之範圍內，較佳地烘箱設定溫度在300至500℃下，曝露時間在60至180分鐘之範圍內。該視情況選用之中間分批退火可例如用拉成2 mm直徑且捲繞在捲筒上之棒進行。
方法步驟(2)之視情況選用之中間分批退火可在惰性或還原氛圍下進行。眾多類型之惰性氛圍以及還原氛圍為此項技術中已知的，且用於吹掃退火烘箱。在已知惰性氛圍中，氮氣或氬氣為較佳的。在已知還原氛圍中，氫氣為較佳的。另一較佳還原氛圍為氫氣及氮氣之混合物。較佳的氫氣及氮氣之混合物為90至98 vol.-%之氮氣及相應地2至10 vol.-%之氫氣，其中vol.-%總計100 vol.-%。較佳的氮氣/氫氣之混合物等於93/7、95/5及97/3 vol.-%/vol.-%，每一者以混合物之總體積計。
在方法步驟(3)中，將鈀或鎳內層及相鄰金外層之雙層塗層形式的塗層施加於在完成方法步驟(2)後獲得的拉長的前驅體物品之表面上，從而將塗層疊加於該表面上。
技術人員瞭解如何計算拉長的前驅體物品上之此類塗層之厚度，以最終獲得線材之實施例所揭示之層厚度的塗層，亦即在最終拉長經塗覆前驅體物品之後。熟習此項技術者知曉在基於銀之表面上形成根據實施例之材料之塗層的許多技術。較佳技術為鍍覆，諸如電鍍及無電極電鍍，自氣相沈積材料，諸如濺鍍、離子電鍍、真空蒸發及物理氣相沈積，以及自熔體沈積材料。在施加由鈀或鎳內層及金外層構成之該雙層的情況下，較佳藉由電鍍來施加鈀或鎳層。
金層亦較佳藉由電鍍施加。金電鍍係利用金電鍍浴來進行，亦即允許用金電鍍鈀或鎳陰極表面之電鍍浴。換言之，金電鍍浴為允許將呈元素、金屬形式之金直接施加於連接作為陰極之鈀或鎳表面上之組合物。
金層之電鍍施加係藉由引導連接作為陰極之鈀塗覆或鎳塗覆之拉長的前驅體物品通過金電鍍浴來進行。可沖洗且乾燥離開金電鍍浴的由此獲得之金塗覆前驅體物品，隨後進行方法步驟(4)。使用水作為沖洗介質為有利的，其中醇及醇/水混合物為沖洗介質之其他實例。鈀塗覆或鎳塗覆之拉長的前驅體物品通過金電鍍浴之金電鍍可在例如0.2至20 V範圍內之直流電壓下，在例如0.001至5 A，尤其0.001至1 A或0.001至0.2 A範圍內之電流下進行。典型接觸時間可在例如0.1至30秒、較佳2至8秒之範圍內。在此情形下使用之電流密度可在例如0.01至150 A/dm
2之範圍內。金電鍍浴之溫度可在例如45℃至75℃、較佳55℃至65℃之範圍內。
金塗層之厚度可視需要主要經由以下參數來調整：金電鍍浴之化學組成、拉長的前驅體物品與金電鍍浴之接觸時間、電流密度。在此上下文中，金層之厚度可通常藉由增加金電鍍浴中金之濃度、藉由增加連接作為陰極之拉長的前驅體物品與金電鍍浴的接觸時間及藉由增加電流密度來增加。
在一實施例中，本發明之方法為用於製造其前述所揭示之有利實施例中之本發明之經塗覆線材的方法。此處，步驟中(3)中金層之施加係藉由自金電鍍浴中電鍍而進行，該金電鍍浴包含金及至少一個選自由銻、鉍、砷及碲組成之群的成員。因此，在該實施例中，金電鍍浴為一種組合物，其不僅允許沈積元素金，且亦允許在金層內沈積該至少一個選自由銻、鉍、砷及碲組成之群的成員。尚未知曉該至少一個成員為何種化學物種，亦即其是否以元素形式或以化合物形式存在於金層中。在該實施例中，金電鍍浴可藉由將該至少一個成員以適合的化學形式(例如，如Sb
2O
3、BiPO
4、As
2O
3或TeO
2之化合物)添加至含有呈一或多種溶解鹽形式之金的水性組合物中來製備。其中可添加至少一個成員之此類水性組合物的實例為Atotech製造之Aurocor® K 24 HF及由Umicore製造之Auruna® 558及Auruna® 559。或者，可利用已包含至少一個選自由銻、鉍、砷及碲組成之群的成員的金電鍍浴，例如基於Metalor製造之MetGold Pure ATF之金電鍍浴。金電鍍浴中之金濃度可在例如8至40 g/l (公克/公升)、較佳10至20 g/l之範圍內。金電鍍浴中之至少一個選自由銻、鉍、砷及碲組成之群的成員之濃度可在例如15至50 wt.-ppm、較佳15至35 wt.-ppm之範圍內。
在方法步驟(4)中，在完成方法步驟(3)後獲得的經塗覆前驅體物品進一步拉長，直至(4)獲得具有雙層之線材的所需最終直徑，該雙層由所需最終厚度在1至100 nm、較佳1至30 nm範圍內之鈀或鎳內層及所需最終厚度在1至250 nm、較佳20至200 nm範圍內之相鄰金外層構成。拉長經塗覆前驅體物品之技術為與上文方法步驟(2)之揭示內容中提及之拉長技術相同的拉長技術。
在方法步驟(5)中，在完成方法步驟(4)後獲得的經塗覆前驅體最後在＞400至460℃範圍內之烘箱設定溫度下進行絲束退火，曝露時間在≥0.8秒至10秒、較佳≥0.8秒至2秒之範圍內，以形成此經塗覆線材。
在一較佳實施例中，最終絲束退火之經塗覆前驅體，亦即使仍熱之經塗覆線材在水中淬滅，在一實施例中，水中可含有一或多種添加劑，例如0.01至0.2體積%之添加劑。在水中淬滅意謂立即或快速，亦即在0.2至0.6秒內，使最終絲束退火之經塗覆前驅體自其在方法步驟(5)中經歷之溫度冷卻至室溫，例如藉由浸漬或滴瀝。
在完成方法步驟(5)及視情況選用之淬滅後，完成本發明之經塗覆線材。為了完全得益於其特性，立刻將其用於線材接合應用為有利的，亦即無延遲，例如在完成方法步驟(5)後不超過25至70天、較佳60天內。或者，為了保持線材之寬線材接合製程窗口特性且為了防止其氧化/硫化或其他化學侵蝕，成品線材通常在完成製程步驟(5)後立即繞線且真空密封，亦即無延遲，例如在完成製程步驟(5)後＜1至5小時內，且接著儲存以作為接合線材進一步使用。在真空密封條件下儲存不應超過12個月。在打開真空密封之後，線材應在不超過25至70天、較佳60天內用於線材接合。
較佳地，所有方法步驟(1)至(5)以及繞線及真空密封均在潔淨室條件(US FED STD 209E潔淨室標準，1k標準)下進行。
本發明之第三態樣為可藉由前文所揭示之根據其任何實施例之方法獲得的經塗覆線材。已發現本發明之經塗覆線材非常適合用作線材接合應用中之接合線材。線材接合技術為技術人員所熟知的。在線材接合過程中，通常會形成球接合(第1接合)及縫合接合(第2接合、楔形接合)。在接合成型期間施加一定的力(通常以公克計)，藉由施加超音波能(通常以mA計)來支持該力。本發明之線材表現出相當寬的線材接合製程窗口。
以下非限制性實例說明本發明。此等實例用於本發明之例示性闡明，且無論如何並不意欲限制本發明之範疇或申請專利範圍。
測試方法所有測試及量測在T=20℃及相對濕度RH=50%下進行。
A. 用於判定線材核心之晶粒之結晶取向及孿晶間界的電子背散射繞射 (EBSD) 圖像分析 ：用於量測線材織構之主要步驟為樣品製備，獲得良好的菊池(Kikuchi)圖案及組分計算：
首先使用環氧樹脂對線材進行罐封，且按照標準金相技術進行拋光。在最終樣品製備步驟中應用離子碾磨以移除線材表面之任何機械變形、污染及氧化層。用金濺鍍經離子碾磨之橫截面樣品表面。隨後再進行兩輪離子碾磨及金濺鍍。不進行化學蝕刻或離子蝕刻。
將樣品裝入FESEM(場發射掃描電子顯微鏡)，其固持器與普通FESEM樣品固持台表面成70°角。FESEM另外配備有EBSD偵測器。獲得含有線材結晶資訊之電子背散射圖案(EBSP)。
進一步分析此等圖案之晶粒取向分數、平均晶粒尺寸等(使用由Oxford Instruments開發之稱為EBSD程式的軟體)。類似取向之點分組在一起以形成織構組件。
為了區分不同織構組件，使用10°之最大公差角。將線材拉伸方向設定為參考取向。＜100＞及＜111＞織構百分比係藉由量測具有平行於參考取向之＜100＞及＜111＞取向平面之晶體的百分比來計算。
平均晶粒尺寸計算中不包括孿晶間界(亦稱為Σ 3 CSL孿晶間界)。孿晶間界係藉由相鄰結晶域之間圍繞＜111＞取向平面之60°旋轉來描述。所關注區域之掃描點之數目視步長而定，其小於所觀測之最細晶粒尺寸(約100 nm)之1/5。
已在每個樣品之五個不同位置處進行EBSD圖案分析。所報導的為五個不同位置之平均值。
B. 用於測定晶粒尺寸之線性截距法 ：首先利用冷鑲嵌環氧樹脂對線材進行罐封，且隨後藉由標準金相技術進行拋光(橫截面)。使用多製備型半自動拋光器以低力度及最佳速度對樣品進行研磨及拋光，使樣品表面上具有最小形變應變。最終，使用氯化鐵化學蝕刻經拋光之樣品以顯露晶粒晶界。根據ASTM E112-12標準，在放大率為1000之光學顯微法下，使用線性截距法量測晶粒尺寸。
C. 花型接合球之評估 ：C.1) FAB之製備：
其根據KNS製程用戶指南(Kulicke & Soffa Industries Inc, Fort Washington, PA, USA, 2002, 2009年5月31日)中描述之FAB之程序在環境氣氛中進行。FAB係藉由標準燒製(單步，17.5 µm線材，EFO電流為50 mA，EFO時間為125 µs)來執行習知電火炬(EFO)燒製來製備。
C.2)球接合：
所形成之FAB自預定義之高度(尖端為203.2 µm)及速度(接觸速度為6.4 µm/sec)下降至Al-0.5wt.-%Cu接合墊。在接觸接合墊後，一組經定義之接合參數(接合力為100 g，超音波能量為95 mA及接合時間為15 ms)生效，使FAB變形且形成接合球。在形成球後，毛細管上升至預定義之高度(扭結高度為152.4 µm及迴路高度為254 µm)以形成迴路。在形成迴路後，毛細管下降至引線以形成縫合。在形成縫合後，毛細管上升且線材夾閉合以切割線材，使其達到預定義的尾部長度(尾部長度延伸為254 µm)。對於每一樣品，使用放大率為1000之顯微鏡對數量可觀的2500根接合線材進行光學檢查。確定缺陷之百分比。
C.3)接合球相對於花型接合球之評估：
+不佳：≥15%之接合球係不圓而變形的
++良好：≥10%至＜15%之接合球係不圓而變形的
+++極佳：＜10%之接合球係不圓而變形的
C.4)線材搖擺之評估：
++良好：＜5%之線材朝向迴路中之相鄰線材偏斜
+++極佳：線材不顯示迴路偏斜
D.線材撚度之評估：
++良好：線材自線軸退繞自由落下時變為線圈，其圈數＜5圈
+++極佳：線材自線軸退繞自由落下時不變為線圈
線材實例在坩堝中熔融一定量的98.5 wt%銀(Ag)及1.5 wt%鈀(Pd)，各金屬之純度為至少99.99%(「4N」)。隨後自熔融物連續澆鑄8 mm棒形式的線材核心前驅體物品。棒隨後在數個拉伸步驟中經拉伸以形成直徑為2 mm之具有圓形橫截面的線材核心前驅體。線材核心前驅體在500℃之烘箱設定溫度下進行中間分批退火，曝露時間為60分鐘。棒在數個拉伸步驟中經進一步拉伸以形成直徑為46 µm之具有圓形橫截面的線材核心前驅體。
線材核心前驅體電鍍有鎳內層及相鄰金外層之雙層塗層。為此目的，線材核心前驅體在連接作為陰極時移動通過60℃溫熱的鎳電鍍浴，且隨後通過61℃溫熱的金電鍍浴。鎳電鍍浴包含90 g/l (公克/公升) Ni(SO
3NH
2)
2、6 g/l NiCl
2及35 g/l H
3BO
3，而金電鍍浴(基於來自Metalor之MetGold Pure ATF)具有13.2 g/l之金含量及20 wt.-ppm之銻含量(基於來自Metalor之MetGold Pure ATF)。
其後，將經塗覆線材前驅體進一步拉伸至最終直徑為20 µm，隨後在表1指示之烘箱設定溫度下進行最終絲束退火，曝露時間為0.9秒，緊接著在含有0.07 vol.-%之界面活性劑的水中淬滅如此獲得之經塗覆線材。20 µm厚線材具有9 nm厚的鎳內層及90 nm厚的相鄰金外層。
表 1 ： 對本發明樣品 S1 至 S3 及比較樣品 C1 及 C2 之 概覽
| 線材 | 最終退火溫度(℃) | 結晶取向線材核心 | 孿晶間界(%) | 晶粒尺寸(µm) | 線材撚度 | 花型接合球 | 線材搖擺 | |
| ＜100＞ (%) | ＜111＞ (%) | |||||||
| S 1 | 447 | 37.7 | 18.7 | 32.3 | 1.0 | +++ | +++ | +++ |
| S 2 | 430 | 47.9 | 8.2 | 21.3 | 0.8 | +++ | +++ | +++ |
| S 3 | 405 | 50.5 | 11.7 | 13.9 | 0.8 | +++ | +++ | +++ |
| C 1 | 500 | 14.8 | 1.7 | 42.6 | 1.2 | +++ | + | ++ |
| C 2 | 300 | 51.5 | 1.3 | 3.1 | 0.6 | ++ | + | +++ |
Claims (14)
- 一種經塗覆線材，其包含具有表面之線材核心，該線材核心具有疊加於其表面上之塗層，其中該線材核心本身為基於銀之線材核心，其中該塗層為包含1至100nm厚的鈀或鎳內層及1至250nm厚的相鄰金外層之雙層，其中該線材表現出以下固有特性A1)至A3)中之至少一者：A1)沿縱向量測之該線材核心中晶粒之平均晶粒尺寸在0.7至1.1μm之範圍內；A2)沿該線材之縱向量測之孿晶間界之分率在5%至40%之範圍內；A3)該線材核心之20%至70%之晶粒以<100>方向取向，且該線材核心之3%至40%之晶粒以<111>方向取向，各%相對於與該線材之拉伸方向平行取向之晶粒總數。
- 如請求項1之經塗覆線材，其平均橫截面在50至5024μm2之範圍內。
- 如請求項1之經塗覆線材，其平均直徑在8至80μm之範圍內。
- 如請求項1至3中任一項之經塗覆線材，其中該雙層包含1至30nm厚的鈀或鎳內層及20至200nm厚的相鄰金外層。
- 如請求項1至3中任一項之經塗覆線材，其表現出固有特性A1)至A3)中之兩種或全部。
- 如請求項1至3中任一項之經塗覆線材，其中該金層包含至少一個選自由銻、鉍、砷及碲組成之群的成員，其總比例按該線材之重量計在10至300wt.-ppm之範圍內。
- 如請求項6之經塗覆線材，其中按該金層中金之重量計，該至少一個選自由銻、鉍、砷及碲組成之群的成員之總比例在300至9500wt.-ppm之範圍內。
- 如請求項6之經塗覆線材，其中該至少一個選自由銻、鉍、砷及碲組成之群的成員在該金層內表現出濃度梯度，該梯度在該線材核心之縱向軸線的垂直方向上遞增。
- 如請求項6之經塗覆線材，其中銻存在於該金層內。
- 如請求項9之經塗覆線材，其中銻單獨存在於該金層內，而不同時存在鉍、砷及碲。
- 一種用於製造如請求項1至10中任一項之經塗覆線材之方法，其中該方法至少包含步驟(1)至(5)：(1)提供基於銀之前驅體物品，(2)拉長該前驅體物品以形成拉長的前驅體物品，直至獲得在30至200μm範圍內之中間直徑，(3)將鈀或鎳內層及相鄰金外層之雙層塗層施加至在完成方法步驟(2) 後獲得的該拉長的前驅體物品之表面上，(4)進一步拉長在完成方法步驟(3)後獲得的經塗覆前驅體物品，直至獲得所需最終直徑以及包含所需最終厚度在1至100nm範圍內之鈀或鎳內層及所需最終厚度在1至250nm範圍內之相鄰金外層的雙層，及(5)最後將在完成方法步驟(4)後獲得的經塗覆前驅體在>400至460℃範圍內之烘箱設定溫度下進行絲束退火，持續在0.8至10秒之範圍內之曝露時間，以形成該經塗覆線材，其中步驟(2)可包括一或多個子步驟，亦即在200至650℃之烘箱設定溫度下對該前驅體物品進行中間分批退火，持續在30至300分鐘之範圍內之曝露時間。
- 如請求項11之方法，其中該鈀或鎳層係藉由電鍍施加。
- 如請求項11或12之方法，其中該金層係藉由電鍍施加。
- 如請求項13之方法，其中步驟(3)中該金層之施加係藉由自金電鍍浴中將其電鍍來進行，該金電鍍浴包含金及至少一個選自由銻、鉍、砷及碲組成之群的成員。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG10202010234V SG10202010234VA (en) | 2020-10-15 | 2020-10-15 | Coated wire |
| SG10202010234V | 2020-10-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202217077A TW202217077A (zh) | 2022-05-01 |
| TWI775576B true TWI775576B (zh) | 2022-08-21 |
Family
ID=78372421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110131016A TWI775576B (zh) | 2020-10-15 | 2021-08-23 | 經塗覆線材 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12084784B2 (zh) |
| JP (1) | JP2023544150A (zh) |
| KR (1) | KR20230050429A (zh) |
| CN (1) | CN116075392A (zh) |
| SG (1) | SG10202010234VA (zh) |
| TW (1) | TWI775576B (zh) |
| WO (1) | WO2022081080A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI818531B (zh) * | 2021-05-05 | 2023-10-11 | 新加坡商新加坡賀利氏材料私人有限公司 | 塗佈圓線及其製造程序 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474408A (zh) * | 2013-09-26 | 2013-12-25 | 辽宁凯立尔电子科技有限公司 | 一种表面有镀金层的金银合金键合丝及其制备方法 |
| CN204067342U (zh) * | 2014-08-14 | 2014-12-31 | 汕头市骏码凯撒有限公司 | 一种半导体用键合丝 |
| TWI642817B (zh) * | 2015-11-23 | 2018-12-01 | 韓商賀利氏東方科技股份有限公司 | 經塗覆線材 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001176912A (ja) * | 1999-12-16 | 2001-06-29 | Noge Denki Kogyo:Kk | 金被覆した銀線ボンディングワイヤ |
| EP2703116B1 (en) * | 2012-09-04 | 2017-03-22 | Heraeus Deutschland GmbH & Co. KG | Method for manufacturing a silver alloy wire for bonding applications |
| KR101681616B1 (ko) * | 2014-08-27 | 2016-12-01 | 헤레우스 도이칠란트 게엠베하 운트 코. 카게 | 본딩 와이어 및 이의 제조 방법 |
| SG10201408302QA (en) * | 2014-12-11 | 2016-07-28 | Heraeus Materials Singapore Pte Ltd | COATED COPPER (Cu) WIRE FOR BONDING APPLICATIONS |
| SG10201607523RA (en) * | 2016-09-09 | 2018-04-27 | Heraeus Materials Singapore Pte Ltd | Coated wire |
| WO2020122809A1 (en) * | 2018-12-12 | 2020-06-18 | Heraeus Materials Singapore Pte. Ltd. | Process for electrically connecting contact surfaces of electronic components |
-
2020
- 2020-10-15 SG SG10202010234V patent/SG10202010234VA/en unknown
-
2021
- 2021-08-10 CN CN202180062896.4A patent/CN116075392A/zh active Pending
- 2021-08-10 KR KR1020237008658A patent/KR20230050429A/ko unknown
- 2021-08-10 US US18/248,482 patent/US12084784B2/en active Active
- 2021-08-10 JP JP2023519880A patent/JP2023544150A/ja active Pending
- 2021-08-10 WO PCT/SG2021/050467 patent/WO2022081080A1/en active Application Filing
- 2021-08-23 TW TW110131016A patent/TWI775576B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474408A (zh) * | 2013-09-26 | 2013-12-25 | 辽宁凯立尔电子科技有限公司 | 一种表面有镀金层的金银合金键合丝及其制备方法 |
| CN204067342U (zh) * | 2014-08-14 | 2014-12-31 | 汕头市骏码凯撒有限公司 | 一种半导体用键合丝 |
| TWI642817B (zh) * | 2015-11-23 | 2018-12-01 | 韓商賀利氏東方科技股份有限公司 | 經塗覆線材 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202217077A (zh) | 2022-05-01 |
| JP2023544150A (ja) | 2023-10-20 |
| KR20230050429A (ko) | 2023-04-14 |
| US12084784B2 (en) | 2024-09-10 |
| SG10202010234VA (en) | 2021-10-28 |
| US20230374690A1 (en) | 2023-11-23 |
| CN116075392A (zh) | 2023-05-05 |
| WO2022081080A1 (en) | 2022-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI642817B (zh) | 經塗覆線材 | |
| JP2018503743A (ja) | ニッケルを含む耐食性および耐湿性銅系ボンディングワイヤ | |
| KR102125160B1 (ko) | 코팅된 와이어 | |
| TWI775576B (zh) | 經塗覆線材 | |
| KR102214366B1 (ko) | 은 합금 구리 와이어 | |
| KR102595696B1 (ko) | 코팅 와이어 | |
| US11236430B2 (en) | Coated wire | |
| TWI818531B (zh) | 塗佈圓線及其製造程序 | |
| KR20180039016A (ko) | 은 합금 와이어 | |
| KR102169059B1 (ko) | 은 합금 와이어 | |
| WO2023096567A1 (en) | Ball-bond arrangement | |
| WO2020101566A1 (en) | Coated wire |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |