CN204067342U - 一种半导体用键合丝 - Google Patents

一种半导体用键合丝 Download PDF

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CN204067342U
CN204067342U CN201420459737.5U CN201420459737U CN204067342U CN 204067342 U CN204067342 U CN 204067342U CN 201420459737 U CN201420459737 U CN 201420459737U CN 204067342 U CN204067342 U CN 204067342U
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coat
bonding wire
wire
utility
silver
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周振基
周博轩
任智
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Shantou Junma Kaisa Coltd
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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract

本实用新型提供一种半导体用键合丝，该键合丝采用双层涂覆的银线，其中核心层采用银线，核心层外第一涂覆层为吸附有氢的钯涂覆层，第一涂覆层外的第二层涂覆层为金涂覆层。所吸附的氢按重量比计算在键合丝中的含量为5-10ppm。本实用新型改善了键合丝的材料性能，提升了线材抗硫化、氧化的能力，提高在N2气氛下的球焊时的结合面积和结合强度，从而提高了线材的导电能力和可靠性。

Description

一种半导体用键合丝
技术领域
本实用新型涉及集成电路材料领域，具体涉及一种半导体用键合丝。 
背景技术
键合丝(bonding wire)是连接芯片与外部封装基板(substrate)和/或多层线路板(PCB)的主要连接方式。键合丝发展趋势从应用方向上主要是线径细微化，高车间寿命(floor life)以及高线轴长度的产品，从化学成分上，主要有铜线(包括裸铜线、镀钯铜线、闪金镀钯铜线)在半导体领域大幅度取代金线，而银线和银合金线在LED以及部分IC封装应用上取代金线。 
相对于金线，银合金线主要的优势是产品成本低，线材软度与金线类同，打线时对IC损伤小，而其主要的问题是线材表面容易硫化、氧化从而影响打线性能以及高温高湿可靠性(PCT,HAST)问题。 
实用新型内容
本实用新型所要解决的技术问题是提供一种半导体用键合丝，采用双层涂覆的银线，通过吸附有氢的钯涂覆层和金涂覆层，来改善键合丝性能，提升线材抗硫化、氧化能力，提高在N2气氛下的球焊时的结合面积和结合强度，从而提高线材的导电能力和可靠性。 
本实用新型所采用的技术方案如下： 
本实用新型提供一种半导体用键合丝，所述键合丝采用双层涂覆的银线，其中核心层采用银线，核心层外第一涂覆层为吸附有氢的钯涂覆层，第一涂覆层外的第二层涂覆层为金涂覆层。 
优选地，所吸附的氢按重量比计算在键合丝中的含量为5-10ppm。 
优选地，所述钯涂覆层厚度为0.2-0.3μm。 
优选地，所述金涂覆层厚度0.05-0.1μm。 
优选地，所述键合丝的直径为18～50微米。 
优选地，所述键合丝中的任意一层或多层中含有第一添加物，所述第一添加物是选自Ca、Y、La、Ce、Mg或Bi中的至少一种；所述Ca、Y、La、Ce、Mg或Bi按重量比计算的添加量为20～100ppm。 
本实用新型的键合丝与现有技术相比，具有以下明显优点和实际效果： 
1、以银为主体材料的镀金钯银键合丝，能够克服铜丝、铝丝表面易氧化、高温稳定性差以及黄金类键合丝生产成本高等不足； 
2、本实用新型含氢的钯涂覆层，增加了产品在N2气氛下的键合的稳定性和可靠性； 
3、键合丝在氢含量为5-10ppm时，在氮气条件下键合的过程中，氢能发挥还原氧化物的作用，从而能获得优良的、比同类常规的键合丝更好的键合性能和可靠性； 
4、金对于垫镀层具有良好的结合性能，与钯层一起工作，提高了与空气接触时对硫的抵抗力，具有更长的寿命。 
5、一层或多层的线材中含有Ca、Y、La、Ce、Mg、Bi中的一种和多种元素改进了线材的机械性能。 
附图说明
图1所示是本实用新型一个实施例的结构示意图。 
具体实施方式
为了更好地理解本实用新型，下面结合实施例进一步阐明本实用新型的内容，但实用新型的内容不仅仅局限于下面的实施例。 
如图1所示，本实用新型提供一种半导体用键合丝，键合丝采用双层涂覆的银线，其中核心层采用银线A，核心层外第一涂覆层为吸附有氢的钯涂覆层B，第一涂覆层外的第二层涂覆层为金涂覆层C。上述钯金涂覆的方式都采用化学电镀的方法。第一层钯涂覆层的吸氢采用在线材被拉到指定线径后，在forming gas(5％H2+95％N2)的条件下进行退火处理，从而完成吸氢过程。 
在本实施例中，所吸附的氢按重量比计算在键合丝中的含量为 5-10ppm。钯涂覆层厚度为0.2-0.3μm；金涂覆层厚度0.05-0.1μm；键合丝的直径为18～50微米；键合丝中的任意一层或多层中含有第一添加物，第一添加物是选自Ca、Y、La、Ce、Mg或Bi中的至少一种；Ca、Y、La、Ce、Mg或Bi按重量比计算的添加量为20～100ppm。 
本实用新型以银为主体材料的镀金钯银键合丝，能够克服铜丝、铝丝表面易氧化、高温稳定性差以及黄金类键合丝生产成本高等不足；含氢的钯Pd涂覆层增加了产品在N2气氛下的键合的稳定性和可靠性；键合丝在氢含量为5-10ppm时，在氮气条件下键合的过程中，氢能发挥还原氧化物的作用，从而能获得优良的、比同类常规的键合丝更好的键合性能和可靠性。金对于垫镀层具有良好的结合性能，与钯层一起工作，提高了与空气接触时对硫的抵抗力，具有更长的寿命。 
为了获得良好的生产，打线性能，本实用新型还发现在线材中加入重量20-100ppm的Ca、Y、La、Ce、Mg和/或Bi，能有效地增加线材的机械强度，提升生产和拉弧线(looping)时的效率和稳定性。 
以上所述实施例仅表达了本实用新型的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本实用新型专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本实用新型构思的前提下，还可以做出若干变形和改进，这些都属于本实用新型的保护范围。因此，本实用新型专利的保护范围应以所附权利要求为准。 

Claims (4)

1.一种半导体用键合丝，其特征在于，所述键合丝采用双层涂覆的银线，其中核心层采用银线，核心层外第一涂覆层为吸附有氢的钯涂覆层，第一涂覆层外的第二层涂覆层为金涂覆层。 
2.根据权利要求1所述的半导体用键合丝，其特征在于，所述钯涂覆层厚度为0.2-0.3μm。 
3.根据权利要求1所述的半导体用键合丝，其特征在于，所述金涂覆层厚度0.05-0.1μm。 
4.根据权利要求1所述的半导体用键合丝，其特征在于，所述键合丝的直径为18～50微米。 
CN201420459737.5U 2014-08-14 2014-08-14 一种半导体用键合丝 Expired - Lifetime CN204067342U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020218969A1 (en) * 2019-04-26 2020-10-29 Heraeus Materials Singapore Pte. Ltd. Coated wire
TWI775576B (zh) * 2020-10-15 2022-08-21 新加坡商新加坡賀利氏材料私人有限公司 經塗覆線材

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020218969A1 (en) * 2019-04-26 2020-10-29 Heraeus Materials Singapore Pte. Ltd. Coated wire
TWI735981B (zh) * 2019-04-26 2021-08-11 新加坡商新加坡賀利氏材料私人有限公司 經塗覆線材
TWI775576B (zh) * 2020-10-15 2022-08-21 新加坡商新加坡賀利氏材料私人有限公司 經塗覆線材
US12084784B2 (en) 2020-10-15 2024-09-10 Heraeus Materials Singapore Pte. Ltd. Coated wire

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