CN204067342U - 一种半导体用键合丝 - Google Patents

一种半导体用键合丝 Download PDF

Info

Publication number
CN204067342U
CN204067342U CN201420459737.5U CN201420459737U CN204067342U CN 204067342 U CN204067342 U CN 204067342U CN 201420459737 U CN201420459737 U CN 201420459737U CN 204067342 U CN204067342 U CN 204067342U
Authority
CN
China
Prior art keywords
coat
bonding wire
wire
utility
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201420459737.5U
Other languages
English (en)
Inventor
周振基
周博轩
任智
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shantou Junma Kaisa Coltd
Original Assignee
Shantou Junma Kaisa Coltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shantou Junma Kaisa Coltd filed Critical Shantou Junma Kaisa Coltd
Priority to CN201420459737.5U priority Critical patent/CN204067342U/zh
Application granted granted Critical
Publication of CN204067342U publication Critical patent/CN204067342U/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

本实用新型提供一种半导体用键合丝，该键合丝采用双层涂覆的银线，其中核心层采用银线，核心层外第一涂覆层为吸附有氢的钯涂覆层，第一涂覆层外的第二层涂覆层为金涂覆层。所吸附的氢按重量比计算在键合丝中的含量为5-10ppm。本实用新型改善了键合丝的材料性能，提升了线材抗硫化、氧化的能力，提高在N2气氛下的球焊时的结合面积和结合强度，从而提高了线材的导电能力和可靠性。

Description

一种半导体用键合丝
技术领域
本实用新型涉及集成电路材料领域，具体涉及一种半导体用键合丝。 
背景技术
键合丝(bonding wire)是连接芯片与外部封装基板(substrate)和/或多层线路板(PCB)的主要连接方式。键合丝发展趋势从应用方向上主要是线径细微化，高车间寿命(floor life)以及高线轴长度的产品，从化学成分上，主要有铜线(包括裸铜线、镀钯铜线、闪金镀钯铜线)在半导体领域大幅度取代金线，而银线和银合金线在LED以及部分IC封装应用上取代金线。 
相对于金线，银合金线主要的优势是产品成本低，线材软度与金线类同，打线时对IC损伤小，而其主要的问题是线材表面容易硫化、氧化从而影响打线性能以及高温高湿可靠性(PCT,HAST)问题。 
实用新型内容
本实用新型所要解决的技术问题是提供一种半导体用键合丝，采用双层涂覆的银线，通过吸附有氢的钯涂覆层和金涂覆层，来改善键合丝性能，提升线材抗硫化、氧化能力，提高在N2气氛下的球焊时的结合面积和结合强度，从而提高线材的导电能力和可靠性。 
本实用新型所采用的技术方案如下： 
本实用新型提供一种半导体用键合丝，所述键合丝采用双层涂覆的银线，其中核心层采用银线，核心层外第一涂覆层为吸附有氢的钯涂覆层，第一涂覆层外的第二层涂覆层为金涂覆层。 
优选地，所吸附的氢按重量比计算在键合丝中的含量为5-10ppm。 
优选地，所述钯涂覆层厚度为0.2-0.3μm。 
优选地，所述金涂覆层厚度0.05-0.1μm。 
优选地，所述键合丝的直径为18～50微米。 
优选地，所述键合丝中的任意一层或多层中含有第一添加物，所述第一添加物是选自Ca、Y、La、Ce、Mg或Bi中的至少一种；所述Ca、Y、La、Ce、Mg或Bi按重量比计算的添加量为20～100ppm。 
本实用新型的键合丝与现有技术相比，具有以下明显优点和实际效果： 
1、以银为主体材料的镀金钯银键合丝，能够克服铜丝、铝丝表面易氧化、高温稳定性差以及黄金类键合丝生产成本高等不足； 
2、本实用新型含氢的钯涂覆层，增加了产品在N2气氛下的键合的稳定性和可靠性； 
3、键合丝在氢含量为5-10ppm时，在氮气条件下键合的过程中，氢能发挥还原氧化物的作用，从而能获得优良的、比同类常规的键合丝更好的键合性能和可靠性； 
4、金对于垫镀层具有良好的结合性能，与钯层一起工作，提高了与空气接触时对硫的抵抗力，具有更长的寿命。 
5、一层或多层的线材中含有Ca、Y、La、Ce、Mg、Bi中的一种和多种元素改进了线材的机械性能。 
附图说明
图1所示是本实用新型一个实施例的结构示意图。 
具体实施方式
为了更好地理解本实用新型，下面结合实施例进一步阐明本实用新型的内容，但实用新型的内容不仅仅局限于下面的实施例。 
如图1所示，本实用新型提供一种半导体用键合丝，键合丝采用双层涂覆的银线，其中核心层采用银线A，核心层外第一涂覆层为吸附有氢的钯涂覆层B，第一涂覆层外的第二层涂覆层为金涂覆层C。上述钯金涂覆的方式都采用化学电镀的方法。第一层钯涂覆层的吸氢采用在线材被拉到指定线径后，在forming gas(5％H2+95％N2)的条件下进行退火处理，从而完成吸氢过程。 
在本实施例中，所吸附的氢按重量比计算在键合丝中的含量为 5-10ppm。钯涂覆层厚度为0.2-0.3μm；金涂覆层厚度0.05-0.1μm；键合丝的直径为18～50微米；键合丝中的任意一层或多层中含有第一添加物，第一添加物是选自Ca、Y、La、Ce、Mg或Bi中的至少一种；Ca、Y、La、Ce、Mg或Bi按重量比计算的添加量为20～100ppm。 
本实用新型以银为主体材料的镀金钯银键合丝，能够克服铜丝、铝丝表面易氧化、高温稳定性差以及黄金类键合丝生产成本高等不足；含氢的钯Pd涂覆层增加了产品在N2气氛下的键合的稳定性和可靠性；键合丝在氢含量为5-10ppm时，在氮气条件下键合的过程中，氢能发挥还原氧化物的作用，从而能获得优良的、比同类常规的键合丝更好的键合性能和可靠性。金对于垫镀层具有良好的结合性能，与钯层一起工作，提高了与空气接触时对硫的抵抗力，具有更长的寿命。 
为了获得良好的生产，打线性能，本实用新型还发现在线材中加入重量20-100ppm的Ca、Y、La、Ce、Mg和/或Bi，能有效地增加线材的机械强度，提升生产和拉弧线(looping)时的效率和稳定性。 
以上所述实施例仅表达了本实用新型的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本实用新型专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本实用新型构思的前提下，还可以做出若干变形和改进，这些都属于本实用新型的保护范围。因此，本实用新型专利的保护范围应以所附权利要求为准。 

Claims (4)

1.一种半导体用键合丝，其特征在于，所述键合丝采用双层涂覆的银线，其中核心层采用银线，核心层外第一涂覆层为吸附有氢的钯涂覆层，第一涂覆层外的第二层涂覆层为金涂覆层。 
2.根据权利要求1所述的半导体用键合丝，其特征在于，所述钯涂覆层厚度为0.2-0.3μm。 
3.根据权利要求1所述的半导体用键合丝，其特征在于，所述金涂覆层厚度0.05-0.1μm。 
4.根据权利要求1所述的半导体用键合丝，其特征在于，所述键合丝的直径为18～50微米。 
CN201420459737.5U 2014-08-14 2014-08-14 一种半导体用键合丝 Expired - Lifetime CN204067342U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420459737.5U CN204067342U (zh) 2014-08-14 2014-08-14 一种半导体用键合丝

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420459737.5U CN204067342U (zh) 2014-08-14 2014-08-14 一种半导体用键合丝

Publications (1)

Publication Number Publication Date
CN204067342U true CN204067342U (zh) 2014-12-31

Family

ID=52208797

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420459737.5U Expired - Lifetime CN204067342U (zh) 2014-08-14 2014-08-14 一种半导体用键合丝

Country Status (1)

Country Link
CN (1) CN204067342U (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020218969A1 (en) * 2019-04-26 2020-10-29 Heraeus Materials Singapore Pte. Ltd. Coated wire
TWI775576B (zh) * 2020-10-15 2022-08-21 新加坡商新加坡賀利氏材料私人有限公司 經塗覆線材

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020218969A1 (en) * 2019-04-26 2020-10-29 Heraeus Materials Singapore Pte. Ltd. Coated wire
TWI735981B (zh) * 2019-04-26 2021-08-11 新加坡商新加坡賀利氏材料私人有限公司 經塗覆線材
TWI775576B (zh) * 2020-10-15 2022-08-21 新加坡商新加坡賀利氏材料私人有限公司 經塗覆線材
US12084784B2 (en) 2020-10-15 2024-09-10 Heraeus Materials Singapore Pte. Ltd. Coated wire

Similar Documents

Publication Publication Date Title
CN103811449B (zh) 焊球凸块结构及其形成方法
CN108122877B (zh) 薄金铜合金线及其制造方法
CN101314832B (zh) 铁合金材料、由铁合金材料制成的半导体引线框架及其制备方法
CN201975388U (zh) 防氧化铜基键合丝
TWI391037B (zh) 接墊結構及其製法
CN104073676A (zh) 一种半导体用键合银合金丝及其制造方法
CN204067342U (zh) 一种半导体用键合丝
JP2010245390A (ja) ボンディングワイヤ
CN104465587A (zh) 一种极微细镀镍铜合金丝及其制作方法
CN103219246A (zh) 一种镀钯镀银的双镀层键合铜丝的制造方法
KR100874925B1 (ko) 반도체 패키지, 그 제조 방법, 이를 포함하는 카드 및 이를포함하는 시스템
CN107946271B (zh) 一种半导体封装用银合金线及其制造方法
CN204067343U (zh) 一种半导体用键合丝
CN104185357B (zh) 一种电路板
CN201081815Y (zh) 电子元器件的陶瓷绝缘子封装外壳
CN103458629B (zh) 多层电路板及其制作方法
US8987873B2 (en) Super integrated circuit chip semiconductor device
CN202084577U (zh) 一种高可靠性的发光二极管
MY160010A (en) Bonding wire and a method of manufacturing the same
CN104167400B (zh) 一种四边无引脚封装件及其封装工艺、制作工艺
CN103824833A (zh) 半导体封装用的铜合金线
CN103219311B (zh) 一种镀钯镀银的双镀层键合铜丝
TWI819835B (zh) 晶片封裝結構
CN211455679U (zh) 一种镀钯合金键合丝
KR102410017B1 (ko) 인쇄회로기판 및 반도체 패키지의 제조 방법

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20141231