CN107706312A - 一种铜纳米纤维及其制备方法、显示面板 - Google Patents
一种铜纳米纤维及其制备方法、显示面板 Download PDFInfo
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 239000010949 copper Substances 0.000 title claims abstract description 88
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 88
- 239000002121 nanofiber Substances 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 80
- 239000011787 zinc oxide Substances 0.000 claims abstract description 40
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 239000002243 precursor Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 abstract description 12
- 229960001296 zinc oxide Drugs 0.000 description 30
- 229920001621 AMOLED Polymers 0.000 description 5
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/40—Oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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Abstract
本发明公开了一种铜纳米纤维及其制备方法、显示面板，该铜纳米纤维包括铜纳米纤维本体，所述铜纳米纤维本体的外表面设有铝掺杂氧化锌层以及在所述铝掺杂氧化锌层远离所述铜纳米纤维本体的一侧设有钝化层；该显示面板包括电极，所述电极包括至少一个如上所述的铜纳米纤维；该铜纳米纤维在保证电导率的同时，实现了具有耐腐蚀和抗氧化的特性。
Description
技术领域
本发明涉及显示领域，尤指一种铜纳米纤维及其制备方法、显示面板。
背景技术
ITO是现代光电器件常用的透明电极，但是由于铟是稀有金属元素，导致ITO的价格高居不下；另外，由于ITO很脆，外界张力或应力引起的变形扭曲往往会使其断裂，从而使其电阻率迅速飙升至绝缘体；因此，ITO不适合作为未来主流的柔性AMOLED透明电极。因此，寻找新型的具有良好的柔韧性、导电率的电极在光电领域的应用至关重要。
发明内容
为了解决上述技术问题，本发明提供了一种铜纳米纤维及其制备方法、显示面板，该铜纳米纤维在保证电导率的同时，实现了具有耐腐蚀和抗氧化的特性。
为了达到本发明目的，本发明采用如下技术方案：一种铜纳米纤维，包括铜纳米纤维本体，所述铜纳米纤维本体的外表面设有铝掺杂氧化锌层以及在所述铝掺杂氧化锌层远离所述铜纳米纤维本体的一侧设有钝化层。
可选地，所述钝化层为氧化铝层。
可选地，所述钝化层为金金属层、银金属层或铂金属层。
可选地，所述氧化铝层的厚度为0.5nm-5nm。
可选地，所述氧化铝层的厚度为1nm-2nm。
可选地，所述铝掺杂氧化锌层的厚度为5nm-30nm。
一种显示面板，包括电极，所述电极包括至少一个如权利要求1-6之一所述的铜纳米纤维。
一种如上所述的铜纳米纤维的制备方法，其特征在于，所述制备方法包括：
通过原子层沉积法在所述铜纳米纤维本体外表面形成所述铝掺杂氧化锌层；
然后再通过原子层沉积法在所述铜纳米纤维本体的铝掺杂氧化锌层上形成所述钝化层。
可选地，在所述铜纳米纤维本体外表面形成铝掺杂氧化锌层的方法为：
以二乙基锌和去离子水作为前驱体源，在100-200℃温度下，对铜纳米纤维本体进行锌循环10-35次；
然后以三甲基铝和去离子水作为前驱体源，在100-200℃温度下，对铜纳米纤维本体进行铝循环1-5次。
可选地，所述钝化层为氧化铝层，在所述铜纳米纤维本体的铝掺杂氧化锌层上形成氧化铝层的方法为：
以三甲基铝和去离子水作为前驱体源，在100-200℃温度下，对所述铝掺杂氧化锌层进行铝循环3-15次。
与现有技术相比，本发明的有益效果是：
本发明实施例提供的铜纳米纤维，其外表面上设有铝掺杂氧化锌层和钝化层，铝掺杂氧化锌层是一种透明导电氧化物，可以保护铜纳米纤维减少氧化；钝化层具有耐腐蚀和抗氧化的特性，从而保证铜纳米纤维电导率的同时，实现了铜纳米纤维具有耐腐蚀和抗氧化的特性。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明技术方案的进一步理解，并且构成说明书的一部分，与本申请的实施例一起用于解释本发明的技术方案，并不构成对本发明技术方案的限制。
图1为本发明实施例提供的铜纳米纤维的剖视图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，下文中将结合附图对本发明的实施例进行详细说明。需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互任意组合。
一种铜纳米纤维，包括铜纳米纤维本体1，铜纳米纤维本体1的外表面设有铝掺杂氧化锌层3以及在铝掺杂氧化锌层3远离铜纳米纤维本体1的一侧设有钝化层2。
本实施例提供的铜纳米纤维，其外表面上设有铝掺杂氧化锌层和钝化层，铝掺杂氧化锌层是一种透明导电氧化物，可以保护铜纳米纤维减少氧化；钝化层具有耐腐蚀和抗氧化的特性，从而保证铜纳米纤维电导率的同时，实现了铜纳米纤维具有耐腐蚀和抗氧化的特性。
实施例1
如图1所示，一种铜纳米纤维，包括铜纳米纤维本体1，铜纳米纤维本体1的外表面设有铝掺杂氧化锌层3以及在铝掺杂氧化锌层3远离铜纳米纤维本体1的一侧设有钝化层2，铝掺杂氧化锌层3是一种透明导电氧化物，可以保护铜纳米纤维本体1减少氧化，为了保证铝掺杂氧化锌层3不影响铜纳米纤维本体1的电导率。进而该复合结构的铜纳米纤维可以应用至显示领域，如透明显示、柔性透明显示、柔性AMOLED显示等领域中作为良好的透明导电电极材料。铝掺杂氧化锌层3的厚度为5nm-30nm，如此还能进一步保证铜纳米纤维作为显示用电极，尤其是透明电极时的透明特性。在本实施例中，铝掺杂氧化锌层3的厚度可以为例如8nm、10nm、15nm、20nm或25nm。
如图1所示，由于铜纳米纤维本体1表面活泼，容易被空气中的水汽和氧气氧化成氧化铜，在铜纳米纤维本体1的铝掺杂氧化锌层3上设置钝化层2，该钝化层2具有耐腐蚀和抗氧化的特性，从而使铜纳米纤维具有良好的电导率的同时，实现了铜纳米纤维具有耐腐蚀和抗氧化的特性，使得该复合结构的铜纳米纤维成为柔性AMOLED透明显示的理想透明导电电极材料；在本实施例中的钝化层2为氧化铝层，进一步的，为了保证载流子能够隧穿钝化层2，使钝化层2不会影响铜纳米纤维本体1优异的光电特性，本实施例中的氧化铝层的厚度为0.5nm-5nm，优选为1nm-2nm，即在本实施例中，氧化铝层的厚度可以为1.5nm、3nm或4nm；在本实施例中，当氧化铝层的厚度小于0.5nm时，一方面不便于氧化铝层的镀设，另一方面氧化铝层的厚度过薄，无法保证铜纳米纤维耐腐蚀和抗氧化的特性；当氧化铝层的厚度大于5nm时，氧化铝层的厚度过厚，会导致载流子无法隧穿氧化铝层，影响铜纳米纤维的光电特性。
本实施例中的铜纳米纤维本体1经过原子层沉积法在其外表面分别镀设形成铝掺杂氧化锌层3和氧化铝层，原子层沉积法是通过将气相前驱体脉冲交替地通入反应器并在沉积基体上化学吸附并反应并形成沉积膜的一种方法，通过该方法，铝掺杂氧化锌和氧化铝会在铜纳米纤维本体1表面化学吸附并发生表面反应，形成纳米级厚度的铝掺杂氧化锌层3和氧化铝层。
本实施例中铜纳米纤维的制备方法为：
通过原子层沉积法在铜纳米纤维本体1外表面形成铝掺杂氧化锌层3，具体方法为：以二乙基锌和去离子水作为前驱体源，在100-200℃温度下，对铜纳米纤维本体1进行锌循环10-35次；然后以三甲基铝和去离子水作为前驱体源，在100-200℃温度下，对铜纳米纤维本体进行铝循环1-5次，完成铝掺杂氧化锌层3的设置；然后再通过原子层沉积法在铜纳米纤维本体1的铝掺杂氧化锌层3上形成氧化铝层，具体方法为：以三甲基铝和去离子水作为前驱体源，在100-200℃温度下，对铝掺杂氧化锌层3进行铝循环3-15次，完成氧化铝层的设置。
本实施例中铜纳米纤维的制备方法的优选方案为，以二乙基锌和去离子水作为前驱体源，在150℃温度下，对铜纳米纤维本体1进行锌循环25次；然后以三甲基铝和去离子水作为前驱体源，在150℃温度下，对铜纳米纤维本体进行铝循环1次，完成铝掺杂氧化锌层3的设置；然后再以三甲基铝和去离子水作为前驱体源，在150℃温度下，对铝掺杂氧化锌层3进行铝循环5次，完成氧化铝层的设置。
本实施例中的铜纳米纤维可以用于作为柔性AMOLED透明显示的透明导电的电极材料，铜纳米纤维中铜纳米纤维本体1具有良好电导率，同时其可以制作为有一定透过率的显示用电极，其外层的氧化铝层具有耐腐蚀和抗氧化的特性，又由于氧化铝层的厚度为纳米级厚度，使氧化铝层本身也具有光电特性，进而该复合结构的铜纳米纤维可以应用至显示领域，如透明显示、柔性透明显示、柔性AMOLED显示等领域中作为良好的透明导电电极材料。
实施例2
实施例2与实施例1的区别在于，钝化层2为惰性金属层，惰性金属层的厚度为0.5nm-5nm，优选为1nm-2nm，惰性金属层可以为金金属层、银金属层或铂金属层。惰性金属层具有耐腐蚀和抗氧化的特性，并且同时具有透明导电的光电特性，实现了本实施例中的铜纳米纤维既具有良好电导率的同时，又具有耐腐蚀和抗氧化的特性。
本实施例中的铝掺杂氧化锌层3和惰性金属层分别通过原子层沉积法设置在铜纳米纤维本体1上。
本发明还提供了一种显示面板，该显示面板包括电极，该电极包括至少一个如实施例1或实施例2所述的铜纳米纤维。
虽然本发明所揭露的实施方式如上，但所述的内容仅为便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属领域内的技术人员，在不脱离本发明所揭露的精神和范围的前提下，可以在实施的形式及细节上进行任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。
Claims (10)
1.一种铜纳米纤维，包括铜纳米纤维本体，其特征在于，所述铜纳米纤维本体的外表面设有铝掺杂氧化锌层以及在所述铝掺杂氧化锌层远离所述铜纳米纤维本体的一侧设有钝化层。
2.根据权利要求1所述的铜纳米纤维，其特征在于，所述钝化层为氧化铝层。
3.根据权利要求1所述的铜纳米纤维，其特征在于，所述钝化层为金金属层、银金属层或铂金属层。
4.根据权利要求1-3之一所述的铜纳米纤维，其特征在于，所述钝化层的厚度为0.5nm-5nm。
5.根据权利要求4所述的铜纳米纤维，其特征在于，所述钝化层的厚度为1nm-2nm。
6.根据权利要求1-3之一所述的铜纳米纤维，其特征在于，所述铝掺杂氧化锌层的厚度为5nm-30nm。
7.一种显示面板，其特征在于，包括电极，所述电极包括如权利要求1-6中任一项所述的铜纳米纤维。
8.一种如权利要求1所述的铜纳米纤维的制备方法，其特征在于，所述制备方法包括：
通过原子层沉积法在所述铜纳米纤维本体外表面形成所述铝掺杂氧化锌层；
然后再通过原子层沉积法在所述铜纳米纤维本体的铝掺杂氧化锌层上形成所述钝化层。
9.一种如权利要求8所述的铜纳米纤维的制备方法，其特征在于，在所述铜纳米纤维本体外表面形成铝掺杂氧化锌层的方法为：
以二乙基锌和去离子水作为前驱体源，在100-200℃温度下，对铜纳米纤维本体进行锌循环10-35次；
然后以三甲基铝和去离子水作为前驱体源，在100-200℃温度下，对铜纳米纤维本体进行铝循环1-5次。
10.一种如权利要求8所述的铜纳米纤维的制备方法，其特征在于，所述钝化层为氧化铝层，在所述铜纳米纤维本体的铝掺杂氧化锌层上形成氧化铝层的方法为：
以三甲基铝和去离子水作为前驱体源，在100-200℃温度下，对所述铝掺杂氧化锌层进行铝循环3-15次。
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| CN106910551A (zh) * | 2017-02-14 | 2017-06-30 | 哈尔滨工业大学深圳研究生院 | 一种电镀金属增强透明导电膜及其制备方法 |
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