CN107706161A - Variable density metal foam radiator - Google Patents
Variable density metal foam radiator Download PDFInfo
- Publication number
- CN107706161A CN107706161A CN201710849059.1A CN201710849059A CN107706161A CN 107706161 A CN107706161 A CN 107706161A CN 201710849059 A CN201710849059 A CN 201710849059A CN 107706161 A CN107706161 A CN 107706161A
- Authority
- CN
- China
- Prior art keywords
- metal foam
- hole
- heat exchange
- open
- pore
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A kind of variable density metal foam radiator, the open-pore metal foam for the different size being sintered in by heat exchange substrate and respectively on heat exchange substrate form, wherein:Square through hole metal foam is positioned at heat exchange substrate center section, and annular through-hole metal foam is located at the periphery of square through hole metal foam and its hole is smaller.The less open-pore metal foam capillary force of hole of the present invention is larger, the circulating pathway of the liquid needed as supplement evaporation, the larger open-pore metal foam of hole is more beneficial for the escape of bubble, so that open-pore metal foam separates the circulation path of liquid make-up and the escape paths of bubble, the resistance run into during bubbles escape is substantially reduced, so that boiling heat transfer coefficient increases.The maximum boiling coefficient of heat transfer is more than 3 times of smooth copper coin.Boiling starting wall superheat degree is reduced to 2K.The special construction of the present invention causes the Temperature Distribution of heat exchange substrate evenly, is more suitable for heat dissipation of electronic chip.Therefore, heat-exchanger rig heat exchange efficiency of the invention is high, can be widely used in dissipation from electronic devices field.
Description
Technical field
The present invention relates to a kind of cooling device of field of electronic devices, specifically a kind of variable density metal foam radiating
Device.
Background technology
With the development of electronics industry, the performance more and more higher of electronic device, and its heating power is also quickly increasing.When
The maximum heating power of preceding electronic chip has been over 100W/cm2, but also quickly increasing.Open-pore metal foam is one
Kind high porosity (0.88-0.98), high-specific surface area (10000-13000m2/m3) porous material, flow-disturbing ability is very strong, energy
Strengthen gas-liquid phase transition heat transfer effect significantly.Therefore, entered in electronic component cooling device using high density holes open-pore metal foam
Row enhanced heat transfer, can be with the radiating effect of the enhancing electronic device heat-exchanger rig of highly significant.
The content of the invention
It is big that the present invention is directed to the ineffective of boiling heat transfer of existing open-pore metal foam, open-pore metal foam specific surface area
The deficiency that is not not fully exerted of advantage, propose a kind of variable density metal foam radiator, boiling can be utilized efficiently to change
The advantages of hot, and can makes full use of the advantages of high density holes metal foam heat exchange specific surface area is big, flow-disturbing ability is strong, so as to reach
Increase the effect of overall boiling heat transfer coefficient.
The present invention is achieved by the following technical solutions:
The open-pore metal foam for the different size that the present invention is sintered in by heat exchange substrate and respectively on heat exchange substrate forms,
Wherein:Square through hole metal foam is located at square through hole metal foam positioned at heat exchange substrate center section, annular through-hole metal foam
The periphery of foam and its hole is smaller.
Described heat exchange substrate is preferably copper material, more preferably fine copper.
Described open-pore metal foam is copper, aluminium or nickel prepared material.
The scope of the hole density of described annular through-hole metal foam is 60PPI~130PPI, and the scope of porosity is 0.8
~0.9, thickness is 3mm~6mm.
The scope of the hole density of described square through hole metal foam is 5PPI~40PPI, and the scope of porosity is 0.92
~0.98, thickness is 1mm~3mm.
It is coupled between described annular through-hole metal foam and square through hole metal foam by method for brazing, to reduce contact
Thermal resistance.
Described open-pore metal foam is prepared by investment casting.
Technique effect
Compared with prior art, in heat exchange structure of the invention, the less open-pore metal foam capillary force of surrounding hole compared with
Greatly, the circulating pathway of the liquid needed as supplement evaporation, the larger open-pore metal foam of middle hole are more beneficial for bubble
Escape so that open-pore metal foam separates the circulation path of liquid make-up and the escape paths of bubble, substantially reduces bubble
The resistance run into during escape, so that boiling heat transfer coefficient increases.The maximum boiling coefficient of heat transfer is more than 3 times of smooth copper coin.
Boiling starting wall superheat degree is reduced to 2K.The special construction of the present invention causes the Temperature Distribution of heat exchange substrate evenly, more suitable
For heat dissipation of electronic chip.Therefore, heat-exchanger rig heat exchange efficiency of the invention is high, can be widely used in dissipation from electronic devices neck
Domain.
Brief description of the drawings
Fig. 1 is schematic cross-section of the present invention;
Fig. 2 is the top view of the present invention;
In figure:Annular through-hole metal foam 1, square through hole metal foam 2, heat exchange substrate 3.
Embodiment
As shown in figure 1, the present embodiment includes:Heat exchange substrate 3, the annular through-hole metal foam being sintered on heat exchange copper base 3
Foam 1, the square through hole metal foam 2 being sintered on heat exchange substrate 3.
Described annular through-hole metal foam 1 is for the less structure of hole, the scope of described hole density
60PPI~130PPI, the scope of described porosity is 0.8~0.9, and described depth of foam is 3mm~6mm.
The structure larger for hole of described square through hole metal foam 2, the scope of described hole density for 5PPI~
40PPI, the scope of described porosity is 0.92~0.98, and described depth of foam is 1mm~3mm.
Open-pore metal foam 1 and open-pore metal foam 2 described in the present embodiment are coupled by method for brazing, to reduce contact heat
Resistance.
Above-mentioned open-pore metal foam is prepared by investment casting, wherein annular through-hole metal foam 1, square through hole
Metal foam 2 and heat exchange substrate 3 are fine copper.
The size of described heat exchange substrate 3 is depending on the size of specific electronic device, annular through-hole metal foam 1, side
The thickness of shape open-pore metal foam 2 is depending on receiving heat exchange amount size.
Above-mentioned specific implementation can by those skilled in the art on the premise of without departing substantially from the principle of the invention and objective with difference
Mode local directed complete set is carried out to it, protection scope of the present invention is defined by claims and not by above-mentioned specific implementation institute
Limit, each implementation in the range of it is by the constraint of the present invention.
Claims (6)
1. a kind of variable density metal foam radiator, it is characterised in that be sintered in by heat exchange substrate and respectively and exchange heat on substrate
Different size open-pore metal foam composition, wherein:Square through hole metal foam is logical positioned at heat exchange substrate center section, annular
Mesoporous metal foam is located at the periphery of square through hole metal foam and its hole is smaller.
2. variable density metal foam radiator according to claim 1, it is characterized in that, described heat exchange substrate is pure copper
Into;Described open-pore metal foam is copper, and aluminium or nickel are made.
3. variable density metal foam radiator according to claim 1, it is characterized in that, described annular through-hole metal foam
The scope of hole density be 60PPI~130PPI, the scope of porosity is 0.8~0.9, and thickness is 3mm~6mm.
4. variable density metal foam radiator according to claim 1, it is characterized in that, described square through hole metal foam
The scope of hole density be 5PPI~40PPI, the scope of porosity is 0.92~0.98, and thickness is 1mm~3mm.
5. variable density metal foam radiator according to claim 1, it is characterized in that, described annular through-hole metal foam
It is coupled between square through hole metal foam by method for brazing to reduce thermal contact resistance.
6. variable density metal foam radiator according to claim 1, it is characterized in that, described open-pore metal foam passes through
Investment casting is prepared.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710849059.1A CN107706161A (en) | 2017-09-20 | 2017-09-20 | Variable density metal foam radiator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710849059.1A CN107706161A (en) | 2017-09-20 | 2017-09-20 | Variable density metal foam radiator |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107706161A true CN107706161A (en) | 2018-02-16 |
Family
ID=61172969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710849059.1A Pending CN107706161A (en) | 2017-09-20 | 2017-09-20 | Variable density metal foam radiator |
Country Status (1)
Country | Link |
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CN (1) | CN107706161A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110707054A (en) * | 2018-07-10 | 2020-01-17 | 株洲中车时代电气股份有限公司 | Direct cooling heat dissipation substrate and power module thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040146736A1 (en) * | 2003-01-29 | 2004-07-29 | Advanced Materials Products, Inc. | High-strength metal aluminide-containing matrix composites and methods of manufacture the same |
CN1929729A (en) * | 2006-09-05 | 2007-03-14 | 西安交通大学 | Metal foam radiator for electronic heater members |
CN100516756C (en) * | 2006-09-18 | 2009-07-22 | 西安交通大学 | Double-pipe metal foam heat exchanger |
CN204584235U (en) * | 2015-04-16 | 2015-08-26 | 新疆大学 | A kind of foam metal material layering casting-global formation equipment |
CN105374771A (en) * | 2014-08-14 | 2016-03-02 | Abb技术有限公司 | Power semiconductor module and method for cooling power semiconductor module |
CN105716461A (en) * | 2016-02-05 | 2016-06-29 | 江苏科技大学 | Temperature equalizing plate with gradient porous capillary cores in plane direction and manufacturing method for temperature equalizing plate |
CN105973021A (en) * | 2016-05-25 | 2016-09-28 | 华北电力大学 | Water collecting device with gradient hydrophilic and hydrophobic performance and application thereof |
-
2017
- 2017-09-20 CN CN201710849059.1A patent/CN107706161A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040146736A1 (en) * | 2003-01-29 | 2004-07-29 | Advanced Materials Products, Inc. | High-strength metal aluminide-containing matrix composites and methods of manufacture the same |
CN1929729A (en) * | 2006-09-05 | 2007-03-14 | 西安交通大学 | Metal foam radiator for electronic heater members |
CN100516756C (en) * | 2006-09-18 | 2009-07-22 | 西安交通大学 | Double-pipe metal foam heat exchanger |
CN105374771A (en) * | 2014-08-14 | 2016-03-02 | Abb技术有限公司 | Power semiconductor module and method for cooling power semiconductor module |
CN204584235U (en) * | 2015-04-16 | 2015-08-26 | 新疆大学 | A kind of foam metal material layering casting-global formation equipment |
CN105716461A (en) * | 2016-02-05 | 2016-06-29 | 江苏科技大学 | Temperature equalizing plate with gradient porous capillary cores in plane direction and manufacturing method for temperature equalizing plate |
CN105973021A (en) * | 2016-05-25 | 2016-09-28 | 华北电力大学 | Water collecting device with gradient hydrophilic and hydrophobic performance and application thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110707054A (en) * | 2018-07-10 | 2020-01-17 | 株洲中车时代电气股份有限公司 | Direct cooling heat dissipation substrate and power module thereof |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180216 |