CN107706143A - Substrate for the processing of RC IGBT wafer rears - Google Patents
Substrate for the processing of RC IGBT wafer rears Download PDFInfo
- Publication number
- CN107706143A CN107706143A CN201711012226.3A CN201711012226A CN107706143A CN 107706143 A CN107706143 A CN 107706143A CN 201711012226 A CN201711012226 A CN 201711012226A CN 107706143 A CN107706143 A CN 107706143A
- Authority
- CN
- China
- Prior art keywords
- igbt
- substrate body
- substrate
- injection
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 235000012431 wafers Nutrition 0.000 claims abstract description 71
- 238000002347 injection Methods 0.000 claims abstract description 33
- 239000007924 injection Substances 0.000 claims abstract description 33
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 11
- 150000002500 ions Chemical class 0.000 description 15
- 238000010586 diagram Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- -1 and certainly Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention relates to a kind of substrate for the processing of RC IGBT wafer rears, it includes that the substrate body of RC IGBT wafer rears can be bonded to, the shape of the substrate body is consistent with the shape of RC IGBT wafers to be bonded, injection figure is provided with substrate body, after substrate body is bonded to the back side of RC IGBT wafers, N-type impurity ion needed for being injected using from the injection figure of substrate body to the back side of RC IGBT wafers, to form required n-type doping region at the back side of RC IGBT wafers by the N-type impurity ion of injection.The present invention is compact-sized, can save photo-mask process of the RC IGBT wafer rears N-type impurity graphically needed for injection, effectively shortens the process-cycle of RC IGBT wafers, reduces processing cost, easy to use, securely and reliably.
Description
Technical field
The present invention relates to a kind of substrate, especially a kind of substrate for the processing of RC-IGBT wafer rears, belongs to microelectronics
Technical field.
Background technology
RC-IGBT wafer rears surface needs the region to form the p-type doping being graphically distributed and n-type doping is interlocked.For
Processing method in the region, at present main flow that RC-IGBT wafer rears form patterned p-type doping and n-type doping is interlocked
It is that overall injection is carried out to p type impurity, N-type impurity is patterned injection, wherein, the doping concentration of N-type impurity is much larger than p-type
The doping concentration of impurity, the figure of p-type doping and n-type doping staggeredly is then formed by activator impurity.
In the prior art, graphically injection needs to carry out lithography process process, process RC-IGBT wafer rears N-type impurity
It is as follows：Resist coating is carried out by wafer rear, is exposed using back side N-type figure reticle, N-type is formed after then developing
The implant blocking layer of doping, overall injection is carried out to wafer rear, removes remaining photoetching offset plate figure.
Therefore, need to carry out lithography process process to RC-IGBT wafer rears in the prior art, cause wafer rear photoetching
Manufacturing procedure cost is high, production cycle length, is unfavorable for RC-IGBT and further develops.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, there is provided one kind adds for RC-IGBT wafer rears
The substrate of work, its is compact-sized, can save photo-mask process of the RC-IGBT wafer rears N-type impurity graphically needed for injection, have
Effect shortens the process-cycle of RC-IGBT wafers, reduces processing cost, easy to use, securely and reliably.
According to technical scheme provided by the invention, the substrate for the processing of RC-IGBT wafer rears, including can be bonded
In the substrate body of RC-IGBT wafer rears, the shape of the substrate body is consistent with the shape of RC-IGBT wafers to be bonded,
Injection figure is provided with substrate body, after substrate body is bonded to the back side of RC-IGBT wafers, utilizes the injection figure of substrate body
N type foreign ions needed for being injected to the back side of RC-IGBT wafers, with the N-type impurity ion by injection in RC-IGBT
The back side of wafer forms required N type doped regions.
The substrate body is rounded, and unfilled corner or breach are set in substrate body.
The material of the substrate body includes glass.
The thickness of the substrate body is the 1/5~1/2 of RC-IGBT wafer thickness to be bonded.
The thickness of the substrate body is 50 μm~300 μm.
Injecting figure includes the circular hole of some insertion substrate bodies, and circular hole is rectangular in substrate body or isosceles triangle is uniformly arranged
Row.
Advantages of the present invention：Substrate physical efficiency is bonded in the back side of RC-IGBT wafers, utilizes the injection figure pair in substrate body
RC-IGBT wafers carry out N-type ion implanting, and required n-type doping region, substrate body can be formed at the back side of RC-IGBT wafers
After RC-IGBT wafer separates, it can reuse；Substrate body directly with can be carried out after RC-IGBT wafer bondings N-type impurity from
The injection of son, photo-mask process of the RC-IGBT wafer rears N-type impurity graphically needed for injection can be saved, effectively shortens RC-
The process-cycle of IGBT wafers, processing cost is reduced, it is easy to use, securely and reliably..
Brief description of the drawings
Fig. 1 is a kind of structural representation of substrate body of the present invention.
Fig. 2 is another structural representation of substrate body of the present invention.
Description of reference numerals：1- substrate bodies, 2- unfilled corners and 3- breach and 4- circular holes.
Embodiment
With reference to specific drawings and examples, the invention will be further described.
In order to save the RC-IGBT wafer rears N-type impurity graphically required photo-mask process of injection, effectively shorten
The process-cycle of RC-IGBT wafers, processing cost is reduced, the present invention includes the substrate body that can be bonded to RC-IGBT wafer rears
1, the shape of the substrate body 1 is consistent with the shape of RC-IGBT wafers to be bonded, and injection figure is provided with substrate body 1,
After substrate body 1 is bonded to the back side of RC-IGBT wafers, it can be noted using the injection figure of substrate body 1 to the back side of RC-IGBT wafers
Enter required N-type impurity ion, mixed with forming required N-type at the back side of RC-IGBT wafers by the N-type impurity ion of injection
Miscellaneous region.
Specifically, the material of the substrate body 1 includes glass, and certainly, substrate body 1 can also use other energy and RC-
The material of IGBT wafer bondings, the type of specific material can be selected as needed, and here is omitted.Substrate body 1
Shape is consistent with RC-IGBT wafers to be bonded, can be with so as to after substrate body 1 is bonded to the back side of RC-IGBT wafers
The back side of RC-IGBT wafers is effectively corresponding, improves the reliability that N-type impurity ion implanting is carried out to RC-IGBT wafers.Having
Body is implemented, and technique before N-type impurity ion implanting etc. can use existing conventional processing step, and carry out N-type
During foreign ion injection, required process conditions etc. will not increase the complexity of N-type impurity ion implanting with existing identical.
Injection figure is pre-set in substrate body 1, the shape for injecting figure can be according to RC-IGBT wafer rear needs
The N-type impurity region of formation is related, so as to after substrate body 1 is bonded to the back side of RC-IGBT wafers, be incited somebody to action using figure is injected
For N-type impurity ion implanting to the back side of RC-IGBT wafers, the region injected in substrate body 1 outside figure is used as barrier layer, so that
Upon activation, the N-type impurity ion of injection can be utilized to form required n-type doping region.In the embodiment of the present invention, as injection N
After type foreign ion, substrate body 1 is separated with the back side of RC-IGBT wafers, and substrate body 1 can reuse, as long as substrate
The injection figure of body 1 meets the needs of n-type doping region to be formed；And the repeatable utilization level of substrate body 1, saving
After removing photo-mask process of the RC-IGBT wafer rears N-type impurity graphically needed for injection, effectively shorten the processing of RC-IGBT wafers
In the cycle, reduce processing cost.
Further, the substrate body 1 is rounded, and unfilled corner 2 or breach 3 are set in substrate body 1.In Fig. 1, substrate body 1 is
The schematic diagram of unfilled corner 2 is set, and in Fig. 2, substrate body 1 lacks to set the schematic diagram of breach 3 when it is implemented, being set in substrate body 1
Angle 2 or the situation of breach 3, it is mainly related to the shape of RC-IGBT wafers to be bonded, unfilled corner 2 or breach 3 are set in substrate body 1
Can be consistent with the shape of RC-IGBT wafers to be bonded.After the shape of substrate body 1 is consistent with the shape of RC-IGBT wafers,
When carrying out N-type impurity ion implanting, N-type impurity ion can only be injected into the back side of RC-IGBT wafers by injecting figure, will not
Influence the setting of other regional locations of RC-IGBT wafer rears.
When it is implemented, the thickness of the substrate body 1 is the 1/5~1/2 of RC-IGBT wafer thickness to be bonded.The present invention
In embodiment, the thickness of the substrate body 1 is 50 μm~300 μm.In addition, injection figure includes the circle of some insertion substrate bodies 1
Hole 4, circular hole is rectangular in substrate body 1 or isosceles triangle is evenly distributed.Circular hole 4 penetrates substrate body 1 so that the N-type impurity of injection
Ion can be injected into the back side of RC-IGBT wafers；Circular hole 4 can form corresponding injection figure after substrate body 1 is regularly arranged.
Claims (6)
1. a kind of substrate for the processing of RC-IGBT wafer rears, it is characterized in that：Including RC-IGBT wafer rears can be bonded to
Substrate body (1), the shape of the substrate body (1) is consistent with the shape of RC-IGBT wafers to be bonded, in substrate body (1)
Injection figure is provided with, can be to using the injection figure of substrate body (1) after substrate body (1) is bonded to the back side of RC-IGBT wafers
N-type impurity ion needed for the back side injection of RC-IGBT wafers, with the N-type impurity ion by injection in RC-IGBT wafers
The back side forms required n-type doping region.
2. the substrate according to claim 1 for the processing of RC-IGBT wafer rears, it is characterized in that：The substrate body (1)
It is rounded, unfilled corner (2) or breach (3) are set in substrate body (1).
3. the substrate according to claim 1 or 2 for the processing of RC-IGBT wafer rears, it is characterized in that：The substrate body
(1) material includes glass.
4. the substrate according to claim 1 or 2 for the processing of RC-IGBT wafer rears, it is characterized in that：The substrate body
(1) thickness is the 1/5~1/2 of RC-IGBT wafer thickness to be bonded.
5. the substrate according to claim 1 for the processing of RC-IGBT wafer rears, it is characterized in that：The substrate body (1)
Thickness be 50 μm~300 μm.
6. the substrate for being used for the processing of RC-IGBT wafer rears according to claim 1 or 2 or 5, it is characterized in that：Injection figure
Shape includes the circular hole of some insertion substrate bodies (1), and circular hole rectangular or isosceles triangle in substrate body (1) is evenly distributed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711012226.3A CN107706143A (en) | 2017-10-26 | 2017-10-26 | Substrate for the processing of RC IGBT wafer rears |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711012226.3A CN107706143A (en) | 2017-10-26 | 2017-10-26 | Substrate for the processing of RC IGBT wafer rears |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107706143A true CN107706143A (en) | 2018-02-16 |
Family
ID=61182363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711012226.3A Pending CN107706143A (en) | 2017-10-26 | 2017-10-26 | Substrate for the processing of RC IGBT wafer rears |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107706143A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6316324B1 (en) * | 1995-11-06 | 2001-11-13 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device without forming selective region by lithography |
| JP2009238632A (en) * | 2008-03-27 | 2009-10-15 | Fujitsu Microelectronics Ltd | Ion implantation apparatus and method of manufacturing semiconductor device |
| JP2013247248A (en) * | 2012-05-25 | 2013-12-09 | Fuji Electric Co Ltd | Semiconductor device manufacturing method |
| CN105280538A (en) * | 2015-09-18 | 2016-01-27 | 江苏中科君芯科技有限公司 | IGBT back side manufacturing method capable of realizing refining photolithography of back side |
| CN105895525A (en) * | 2014-10-21 | 2016-08-24 | 南京励盛半导体科技有限公司 | Technological method for preparing back doped regions of semiconductor device |
| US9443732B1 (en) * | 2014-08-05 | 2016-09-13 | Samsung Electronics Co., Ltd. | Method of fabricating semiconductor device |
| CN106920862A (en) * | 2017-03-08 | 2017-07-04 | 泰州乐叶光伏科技有限公司 | All back-contact electrodes back of solar cell ion implanting mask and back side figure implementation method |
| CN207425833U (en) * | 2017-10-26 | 2018-05-29 | 江苏中科君芯科技有限公司 | For the substrate of RC-IGBT wafer rears processing |
-
2017
- 2017-10-26 CN CN201711012226.3A patent/CN107706143A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6316324B1 (en) * | 1995-11-06 | 2001-11-13 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device without forming selective region by lithography |
| JP2009238632A (en) * | 2008-03-27 | 2009-10-15 | Fujitsu Microelectronics Ltd | Ion implantation apparatus and method of manufacturing semiconductor device |
| JP2013247248A (en) * | 2012-05-25 | 2013-12-09 | Fuji Electric Co Ltd | Semiconductor device manufacturing method |
| US9443732B1 (en) * | 2014-08-05 | 2016-09-13 | Samsung Electronics Co., Ltd. | Method of fabricating semiconductor device |
| CN105895525A (en) * | 2014-10-21 | 2016-08-24 | 南京励盛半导体科技有限公司 | Technological method for preparing back doped regions of semiconductor device |
| CN105280538A (en) * | 2015-09-18 | 2016-01-27 | 江苏中科君芯科技有限公司 | IGBT back side manufacturing method capable of realizing refining photolithography of back side |
| CN106920862A (en) * | 2017-03-08 | 2017-07-04 | 泰州乐叶光伏科技有限公司 | All back-contact electrodes back of solar cell ion implanting mask and back side figure implementation method |
| CN207425833U (en) * | 2017-10-26 | 2018-05-29 | 江苏中科君芯科技有限公司 | For the substrate of RC-IGBT wafer rears processing |
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