CN101937843A - Pattern definition method of wet-method etching - Google Patents
Pattern definition method of wet-method etching Download PDFInfo
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- CN101937843A CN101937843A CN2009100575239A CN200910057523A CN101937843A CN 101937843 A CN101937843 A CN 101937843A CN 2009100575239 A CN2009100575239 A CN 2009100575239A CN 200910057523 A CN200910057523 A CN 200910057523A CN 101937843 A CN101937843 A CN 101937843A
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- wet etching
- hydrogen peroxide
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- hydrofluoric acid
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Abstract
The invention discloses a pattern definition method of wet-method etching, comprising the following steps: 1) forming a shield oxide film on a silicon substrate and coating photoresist on the shield oxide film; 2) forming patterns via exposure and development on the photoresist film; 3) injecting ions; 4) removing redundant photoresist; 5) etching in DHF solution to form tunnel window pattern; and 6) cleaning, and growing the subsequent film structure. The pattern definition method of wet-method etching can improve surface condition of a silicon chip and improve filming quality.
Description
Technical field
The present invention relates to semiconductor integrated circuit and make the field, relate in particular to a kind of graphical definition method of wet etching.
Background technology
In semiconductor integrated circuit making field, often there are some oxide-films serving as the shielding oxide-film (Screen Oxide) that ion injects, and after the ion injection is finished, are removed again.When some is specific, such as being in the manufacture craft of embedded flash memory (E-Flash) of characteristics with ONO structure (oxide-film-nitride film-oxide-film structure), before the ONO structure fabrication, have one deck tunnel oxide film (tunnel oxide), after this layer oxide-film can define figure, the ion that carries out the N type injects and forms raceway groove, the tunnel oxide film of this one deck is got rid of with buffer oxide film etching agent (BOE) with photoresist then, begins the ONO that grows subsequently after removing photoresist.
The problem that exists is at present, has carried out after the ion injection, in the tunnel oxide film etching, if use buffer oxide film etching agent, following shortcoming is often arranged:
1.BOE cause the roughness (roughness) on silicon substrate surface even form some fine spots (pitting) easilier, the trickle defective on these surfaces, may influence the quality of subsequent oxidation film growth and the boundary defect of oxide-film and silicon substrate, thereby bring some reliability problems;
2.BOE compare thickness, surface tension is bigger, and is poor for the structure flowability that size is especially little, can cause the problem of some etching homogeneities;
3.BOE band photoresist etching, also have the risk of photoresist lift off.
Prior art is controlled the etching homogeneity of small scale structures not too easily, may cause the damage to silicon substrate, influences the quality of forming film of subsequent oxidation film, and has the danger of photoresist lift off in the definition figure.
Summary of the invention
Technical problem to be solved by this invention provides a kind of graphical definition method of wet etching, can improve the silicon chip surface situation, improves quality of forming film.For solving the problems of the technologies described above, the technical scheme of the graphical definition method of wet etching of the present invention is may further comprise the steps:
1) on silicon substrate, forms the shielding oxide-film, and on the shielding oxide-film, be coated with photoresist;
2) photoresist is exposed and develop and form figure;
3) carrying out ion injects;
4) peel off unnecessary photoresist;
5) at deionized water: etching forms the tunnel window figure in the dilute hydrofluoric acid solution of hydrofluoric acid＞100: 1;
6) clean, and the follow-up membrane structure of growing up.
Be as a further improvement on the present invention,, the concentration of dilute hydrofluoric acid solution is deionized water in the step 5): hydrofluoric acid is between 100: 1 to 1000: 1.
As another kind of further improvement of the present invention be, the oxide-film that injects through ion in the step 5) and not through the oxide-film of ion injection in the etching selection ratio of DHF solution between 1.5: 1 to 10: 1.
The difference of oxide-film after the present invention utilizes ion to inject and the oxide film wet etching speed injected without ion defines figure, can reduce greatly in the etching process the damage of silicon substrate and the uniformity that improves etching.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the inventive method schematic flow sheet;
Fig. 2 is the inventive method flowage structure schematic diagram.
Among the figure in the Reference numeral:
1 is silicon substrate, and 2 is the shielding oxide-film, and 3 is photoresist, and 4 are the oxide-films through the ion injection, 5 windows for the formation of diluted hydrofluoric acid etching, and 6 for being formed on the injection region on the silicon substrate.
Embodiment
As shown in Figure 1, the graphical definition method of wet etching of the present invention comprises following step:
At first, shown in Fig. 2 a, on silicon substrate 1, form shielding oxide-film 2, and on shielding oxide-film 2, be coated with photoresist 3.Generally adopt hot oxygen (Thermal Oxide) to form the shielding oxidation film layer herein.
Then, the photoresist 3 that previous step is formed exposes and develops, and the method for employing photoetching forms needed figure.
Then, carry out ion and inject, ion implantation energy and kind are undertaken by concrete requirement on devices, and ionic type can comprise phosphorus, arsenic, and antimony, or the like, form the structure shown in Fig. 2 b.At this moment, part shielding oxide-film 2 is protected by photoresist 3, thereby does not carry out ion and inject, and another part shielding oxide-film 2 then has been carried out the ion injection.
Remaining photoresist 3 is peeled off again, formed the structure shown in Fig. 2 c, at this moment, in the shielding oxide-film 2 that exposes, a part was injected for ion, and another part was not injected by ion.In this process, can adopt traditional Ashing (ashing), and the mode that dioxysulfate water adds the ammoniacal liquor hydrogen peroxide is carried out.
Carry out the processing of dilute hydrofluoric acid then, according to the oxide-film 4 that injects through ion and the oxide-film that do not inject through the ion figure after the principle that DHF (hydrofluoric acid after the dilution) has a wet etching selection ratio defines wet etching, form window 5, shown in Fig. 2 d.Form as the tunnel window before the ONO structure forms.The volume by volume concentration of hydrofluoric acid can be as required from DI (deionized water): HF (hydrofluoric acid)=regulate 100: 1 to 1000: 1, two kinds of shielding oxide-films that injected by ion and the shielding oxide-film that do not injected by ion in the selection of etching soup than between 1.5: 1 to 10: 1.
At last, carry out pre-treatment and clean the follow-up membrane structure of growing up.When carrying out the pre-treatment cleaning, can adopt dioxysulfate water+ammoniacal liquor hydrogen peroxide+hydrochloric acid hydrogen peroxide to clean, and then carry out the growth of subsequent film structure.The pre-treatment cleaning in this step and the etching of previous step can be carried out in different machines.Also can in a machine, carry out.In same machine of being etched in of pre-treatment cleaning and previous step, carry out, then in same machine, add following soup successively, dioxysulfate water+diluted hydrofluoric acid+ammoniacal liquor hydrogen peroxide+hydrochloric acid hydrogen peroxide or in same machine, once add diluted hydrofluoric acid+dioxysulfate water+ammoniacal liquor hydrogen peroxide+hydrochloric acid hydrogen peroxide soup, completing steps 5 in a machine) and step 6) in cleaning.
The present invention adopts diluted hydrofluoric acid to carry out wet etching, utilizes oxide-film that ion injects and the oxide-film that injects through the ion figure after the principle that DHF (hydrofluoric acid after the dilution) has a wet etching selection ratio defines wet etching.Therefore because diluted hydrofluoric acid is to silicon substrate not damage basically, the quality of forming film to the oxide-film of subsequent growth has reasonable assurance.And the surface tension of diluted hydrofluoric acid is smaller, and is mobile better, etching homogeneity that can easier control small scale structures.And utilize the difference of wet-etch rate to define figure, can avoid wet etching, thereby avoid the risk of photoresist lift off with photoresist.
Claims (8)
1. the graphical definition method of a wet etching is characterized in that, may further comprise the steps:
1) on silicon substrate, forms the shielding oxide-film, and on the shielding oxide-film, be coated with photoresist;
2) photoresist is exposed and develop and form figure;
3) carrying out ion injects;
4) peel off unnecessary photoresist;
5) at deionized water: etching forms the tunnel window figure in the dilute hydrofluoric acid solution of hydrofluoric acid＞100: 1;
6) clean, and the follow-up membrane structure of growing up.
2. the graphical definition method of wet etching according to claim 1 is characterized in that, the concentration of dilute hydrofluoric acid solution is deionized water in the step 5): hydrofluoric acid is between 100: 1 to 1000: 1.
3. the graphical definition method of wet etching according to claim 1 is characterized in that, oxide-film that injects through ion in the step 5) and the oxide-film that injects through ion in the etching selection ratio of DHF solution between 1.5: 1 to 10: 1.
4. the graphical definition method of wet etching according to claim 1 is characterized in that, adopts hot oxygen method to form the shielding oxide-film in the step 1) on silicon substrate.
5. the graphical definition method of wet etching according to claim 1 is characterized in that, the method that adopts ashing in the step 4) is adding that the method that dioxysulfate water adds the ammoniacal liquor hydrogen peroxide peels off unnecessary photoresist.
6. the graphical definition method of wet etching according to claim 1 is characterized in that, adopts dioxysulfate water+ammoniacal liquor hydrogen peroxide+hydrochloric acid hydrogen peroxide to clean in the step 6).
7. the graphical definition method of wet etching according to claim 1 is characterized in that, the cleaning in step 5) and the step 6) is finished in a machine.
8. the graphical definition method of wet etching according to claim 7, it is characterized in that, in same machine, add dioxysulfate water+diluted hydrofluoric acid+ammoniacal liquor hydrogen peroxide+hydrochloric acid hydrogen peroxide soup successively or in same machine, add diluted hydrofluoric acid+dioxysulfate water+ammoniacal liquor hydrogen peroxide+hydrochloric acid hydrogen peroxide completing steps 5 successively) and step 6) in cleaning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100575239A CN101937843A (en) | 2009-06-30 | 2009-06-30 | Pattern definition method of wet-method etching |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100575239A CN101937843A (en) | 2009-06-30 | 2009-06-30 | Pattern definition method of wet-method etching |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128945A (en) * | 2016-07-18 | 2016-11-16 | 上海集成电路研发中心有限公司 | A kind of ion injection method |
| CN108321079A (en) * | 2017-01-16 | 2018-07-24 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN110923714A (en) * | 2019-09-26 | 2020-03-27 | 宁波福至新材料有限公司 | Etching solution and etching method for titanium foil micropore pattern |
-
2009
- 2009-06-30 CN CN2009100575239A patent/CN101937843A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128945A (en) * | 2016-07-18 | 2016-11-16 | 上海集成电路研发中心有限公司 | A kind of ion injection method |
| CN108321079A (en) * | 2017-01-16 | 2018-07-24 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN108321079B (en) * | 2017-01-16 | 2021-02-02 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN110923714A (en) * | 2019-09-26 | 2020-03-27 | 宁波福至新材料有限公司 | Etching solution and etching method for titanium foil micropore pattern |
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Application publication date: 20110105 |