CN103258732B - Prevent the method that surface of silicon is damaged - Google Patents
Prevent the method that surface of silicon is damaged Download PDFInfo
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- CN103258732B CN103258732B CN201310165221.XA CN201310165221A CN103258732B CN 103258732 B CN103258732 B CN 103258732B CN 201310165221 A CN201310165221 A CN 201310165221A CN 103258732 B CN103258732 B CN 103258732B
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- silicon
- ion implantation
- implantation technology
- oxide layer
- protective layer
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Abstract
The present invention relates to a kind of method that silicon face preventing ion implanted regions damages; it is applied in ion implantation technology; the upper surface of described silicon substrate covers a defective protective layer of tool, and described method includes: use prosthetic solution to repair described protective layer, to remove described defect；Described silicon substrate is proceeded described ion implantation technology, so that the thickness of described protective layer and consistency reach the technological requirement protected described silicon substrate in described ion implantation technology.By the inventive method, the protective layer in semiconductor devices is repaired; make protective layer after the ion implantation technology of multiple tracks; it is maintained to it and there is consistency and the thickness meeting process conditions; and then can effectively protect silicon layer below in follow-up ion implantation technology, prevent the lattice damage of the silicon layer of ion implanted regions.
Description
Technical field
The present invention relates to a kind of process for fabricating semiconductor device prevents surface of silicon from damaging
Method.
Background technology
Along with the development of semiconductor technology, ion implantation technique has become as semiconductor production process
In common technology, at present, in semiconductor fabrication process, the technique number of plies of ion implanting will
Closely accounting for the half of the technique number of plies in whole production process, it is increasingly becoming the master of semiconductor defect
One of originate.
In existing technology, the lattice of silicon face is damaged by bulky grain, high-octane ion implanting
Wound cannot be avoided, and the silicon face having lattice damage can shape after follow-up high temperature and acid tank technique
Become the defect of unrepairable.At present, what industry was commonly used is to use sacrificial oxide layer to protect
Silicon, to prevent the lattice damage of silicon face after ion implantation.But, in ion implanting work
During skill, the most once photoetching of ion implanting each time and the process removed photoresist, photoetching and going
The process of glue can cause the lower thickness of sacrificial oxide layer, adds ion implanting itself and also can make
The lower thickness of sacrificial oxide layer, therefore, in repeated multiple times ion implantation process, sacrifices
The thickness of oxide layer can be more and more thinner, and its consistency also can be more and more weak.And for sacrificing oxidation
The consistency of layer dies down, it is necessary to repair sacrificial oxide layer, but, owing to ion is noted
After entering, ion diffusion couple temperature is the most sensitive, thus the high temperature reparation of routine to may not apply to this sacrificial
In the preparation of domestic animal oxide layer.
Chinese patent (publication number: CN102655088A) discloses a kind of reparation ion implanting
The method of damage, comprises the following steps: provide semi-conductive substrate, to described Semiconductor substrate
Implement ion implantation technology；Described Semiconductor substrate is carried out by the atmosphere of hydrogen be heat-treated work
Skill, to repair ion implantation damage；Described Semiconductor substrate is carried out metalized；Institute
State semiconductor substrate and form metal connecting line.This patent uses heat treatment to carry out ion implanting
After injury repair, it is easy to cause the diffusion of ion, thus ultimately result in the semiconductor of preparation
The performance of device it cannot be guaranteed that.Not there is the meaning of actual application.
Chinese patent (CN101383269A) discloses the recycling method of a kind of monitoring piece,
The method includes: the monitoring piece of line ion implanting in process carries out short annealing, repairs prison
The lattice damage that control wafer surface is caused because of ion implanting；Monitoring piece after repairing is used for middle line
Ion implanting monitors.This patent is quickly moved back by surveying monitoring piece after centering line ion implanting
Fire, repairs the lattice damage of monitoring piece, so that control wafer meets the monitoring of middle line ion implanting
Requirement.Method disclosed in this patent is the reclamation activities after ion implanting causes damage, and
The measure of non-pre-antisitic defect.
It is visible, for ion implantation technology is prevented the consistency of the sacrificial oxide layer of silicon damage
Maintain and do not have one effectively for measure.
Summary of the invention
In view of the above problems, the present invention provides a kind of method preventing surface of silicon from damaging.
The present invention solves the technical scheme that technical problem used:
A kind of method preventing surface of silicon from damaging, is applied in ion implantation technology, described
The upper surface of silicon substrate covers a defective protective layer of tool, and wherein, described method includes:
Prosthetic solution is used described protective layer to be repaired, to remove described defect；
Described silicon substrate is proceeded described ion implantation technology.
The described method preventing surface of silicon from damaging, wherein, described defect is for carrying out ion
The damage after injection technology and/or photoetching and/or etching technics, described oxide layer caused.
The described method preventing surface of silicon from damaging, wherein, described protective layer is for sacrificing oxygen
Change layer.
The described method preventing surface of silicon from damaging, wherein, the material of described protective layer is
SiO2。
The described method preventing surface of silicon from damaging, wherein, described prosthetic solution is strong
Oxidizing solution, uses this strong oxidizing solution to aoxidize described protective layer to remove described defect.
The described method preventing surface of silicon from damaging, wherein, described strong oxidizing solution is
Sulfuric acid solution.
The described method preventing surface of silicon from damaging, wherein, the concentration of described sulfuric acid solution
It is 5%.
The described method preventing surface of silicon from damaging, wherein, uses described prosthetic solution
After repairing described protective layer, the thickness of described protective layer is
The described method preventing surface of silicon from damaging, wherein, described ion implantation technology is
Bulky grain high energy ion injection technology.
The described method preventing surface of silicon from damaging, wherein, described defect is described protection
The thickness of layer and the minimizing of consistency.
Technique scheme has the advantage that or beneficial effect:
The present invention uses prosthetic solution to repair the protective layer on semiconductor devices so that
Protective layer, after the ion implantation technology of multiple tracks, is maintained to its due consistency
And thickness, and then effectively protection silicon layer below in follow-up ion implantation technology, prevent
The lattice damage of the silicon layer of ion implanted regions.
Accompanying drawing explanation
With reference to appended accompanying drawing, more fully to describe embodiments of the invention.But, appended
Accompanying drawing is merely to illustrate and illustrates, is not intended that limitation of the scope of the invention.
Fig. 1 is the step schematic diagram of the inventive method；
Fig. 2 is the structural representation in the present embodiment repaired sacrificial oxide layer.
Detailed description of the invention
The present invention provides in a kind of process for fabricating semiconductor device and prevents surface of silicon from damaging
Method.The present invention can be used for technology node for less than 22nm, 32/28nm, 45/40nm,
65/55nm, 90nm and more than 130nm technique in；The present invention can be used for Logic,
In the technology platforms such as Memory, RF, HV, CIS, Flash, eFlash.
In the manufacture process of semiconductor devices, meeting is through ion implantation technology repeatedly, and usual
The device carrying out ion implantation technology all comprises a protective layer, with protection silicon lining below
The end, it is to avoid the damage of silicon substrate and lattice defect.But, in the life of whole semiconductor devices
In production. art, generally it is required for the ion implantation technology through multiple tracks, with on semiconductor devices
Zones of different carry out ion implanting, and for selective ion implanting, it is each time
Photoetching and the step removed photoresist all can be carried out, to determine that ion is noted before the technical process of ion implanting
The region entered, this photoetching and the step removed photoresist can produce impact to the thickness of protective layer so that it is thick
Spend thinning, also reduce the consistency of this protective layer simultaneously；It addition, when carry out high-octane from
After son injects, its also can the thickness of thinning protective layer, and reduce the consistency of protective layer.
Therefore, present invention ion implanting work each time in the manufacture process of semiconductor devices
Before skill, all protective layer is repaired, to recover its thickness and consistency so that it is reach full
Required thickness and consistency in foot subsequent ion injection technology, be positioned at this protective layer with protection
The silicon substrate of lower section, thus avoid this surface of silicon that lattice damage occurs.
Fig. 1 is the step schematic diagram of the inventive method；As it is shown in figure 1, the present invention prevent from
The method of the silicon face damage of sub-injection region comprises the following steps:
Including a protective layer at the semiconductor devices with a silicon substrate, this protective layer is positioned at this
On silicon substrate, before this silicon substrate is carried out ion implantation technology, use prosthetic solution
This protective layer is repaired, so that this protective layer is in the thickness after repairing and consistency
Meet the technological requirement protecting silicon substrate in follow-up ion implantation technology.
Below in conjunction with specific embodiment and accompanying drawing, the inventive method is illustrated.
The prosthetic solution used in the present embodiment is the sulfuric acid solution with strong oxidizing property,
And the concentration of this sulfuric acid solution is 5%；Protective layer is sacrificial oxide layer, this sacrificial oxide layer
Material be SiO2。
Before the silicon substrate being coated with sacrificial oxide layer is carried out ion implantation technology, first to this
Sacrificial oxide layer carries out oxidation and repairs, and concrete oxidation restorative procedure is as follows:
Fig. 2 is the structural representation in the present embodiment repaired sacrificial oxide layer.
As in figure 2 it is shown, be coated with a sacrificial oxide layer 2 on the surface of a P-type silicon substrate, adopt
Act on the surface of this sacrificial oxide layer 2 with the sulfuric acid solution that concentration is 5%, make this sacrifice oxygen
Change layer 2 under the effect of this sulfuric acid solution, carry out oxidation reparation, thus change its thickness and densification
Spending to reach to protect the technological standards of underlying silicon substrate, wherein the thickness of this sacrificial oxide layer 2 is, as、、、、Deng.
As it is shown in figure 1, after this sacrificial oxide layer 2 has been repaired, cover on silicon substrate
The region having sacrificial oxide layer 2 carries out ion implanting, and the injection ion of this ion implanting can basis
Concrete technique needs to select, its energy and dosage equally can according to concrete technology need into
Row selects, and the most preferably bulky grain and high-octane ion, treat ion implanting
After technique completes, according to technique needs, such as the silicon that need to again this sacrificial oxide layer 2 be covered
When substrate 1 carries out ion implantation technology, repeating above-mentioned step, first using concentration is 5%
Sulfuric acid solution carries out oxidation and repairs this sacrificial oxide layer 2 so that it is thickness and consistency all reach
After the technological requirement of protection underlying silicon substrate 1, it is further continued for carrying out ion implantation technology.
Under normal circumstances, the production process of a semiconductor devices needs through ion repeatedly
Injection technology, all used above-mentioned oxidation restorative procedure pair before each ion implantation technology
Sacrificial oxide layer 2 carries out oxidation and repairs.
After completing ion implantation technology, put in Defect Scanning equipment by this semiconductor devices
Row detection, does not find after detection that the silicon face after being ion implanted produces damage and lattice lacks
Fall into.This detection demonstrates the sulfuric acid solution using concentration to be 5% and repaiies sacrificial oxide layer 2
After Fu, it is possible to improve thickness and the consistency of this sacrificial oxide layer 2, effectively protect and be positioned at
The surface of silicon substrate 1 below, thus avoid damage and the lattice defect of this silicon substrate 1.
For a person skilled in the art, after reading described above, various changes and modifications
Will be apparent to undoubtedly.Therefore, appending claims should be regarded as and contains the true of the present invention
Sincere figure and whole variations and modifications of scope.In Claims scope any and all etc.
The scope of valency and content, be all considered as still belonging to the intent and scope of the invention.
Claims (7)
1. the method preventing surface of silicon from damaging, is applied in ion implantation technology,
The upper surface of described silicon substrate covers a defective sacrificial oxide layer of tool, it is characterised in that institute
The method of stating includes:
Prosthetic solution is used described sacrificial oxide layer to be repaired, to remove described defect；
Described silicon substrate is proceeded described ion implantation technology；
Wherein, after described defect is for carrying out ion implantation technology and/or photoetching and/or etching technics
The damage that described oxide layer is caused；Described prosthetic solution is strong oxidizing solution.
Preventing the method that surface of silicon is damaged the most as claimed in claim 1, its feature exists
In, the material of described sacrificial oxide layer is SiO2。
Preventing the method that surface of silicon is damaged the most as claimed in claim 1, its feature exists
In, described strong oxidizing solution is sulfuric acid solution.
Preventing the method that surface of silicon is damaged the most as claimed in claim 3, its feature exists
In, the concentration of described sulfuric acid solution is 5%.
Preventing the method that surface of silicon is damaged the most as claimed in claim 1, its feature exists
In, after using described prosthetic solution that described sacrificial oxide layer is repaired, described sacrifice oxygen
The thickness changing layer is
Preventing the method that surface of silicon is damaged the most as claimed in claim 1, its feature exists
In, described ion implantation technology is bulky grain high energy ion injection technology.
Preventing the method that surface of silicon is damaged the most as claimed in claim 1, its feature exists
In, described defect is thickness and the minimizing of consistency of described sacrificial oxide layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310165221.XA CN103258732B (en) | 2013-05-07 | 2013-05-07 | Prevent the method that surface of silicon is damaged |
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| CN201310165221.XA CN103258732B (en) | 2013-05-07 | 2013-05-07 | Prevent the method that surface of silicon is damaged |
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| CN103258732B true CN103258732B (en) | 2016-08-24 |
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| CN105097505B (en) * | 2014-04-21 | 2017-10-20 | 北大方正集团有限公司 | The method of the polysilicon emitter manufacture of transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5840600A (en) * | 1994-08-31 | 1998-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device and apparatus for treating semiconductor device |
| CN1918701A (en) * | 2004-02-16 | 2007-02-21 | 夏普株式会社 | Thin film transistor and manufacturing method thereof, display apparatus, method for modifying oxide film, method for forming oxide film, semiconductor device, method for manufacturing semiconductor d |
| CN102082127A (en) * | 2009-11-26 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011097029A (en) * | 2009-09-30 | 2011-05-12 | Tokyo Electron Ltd | Process for manufacturing semiconductor device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5840600A (en) * | 1994-08-31 | 1998-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device and apparatus for treating semiconductor device |
| CN1918701A (en) * | 2004-02-16 | 2007-02-21 | 夏普株式会社 | Thin film transistor and manufacturing method thereof, display apparatus, method for modifying oxide film, method for forming oxide film, semiconductor device, method for manufacturing semiconductor d |
| CN102082127A (en) * | 2009-11-26 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
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