CN107695868A - 化学机械抛光垫及其制备方法 - Google Patents

化学机械抛光垫及其制备方法 Download PDF

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Publication number
CN107695868A
CN107695868A CN201610461559.3A CN201610461559A CN107695868A CN 107695868 A CN107695868 A CN 107695868A CN 201610461559 A CN201610461559 A CN 201610461559A CN 107695868 A CN107695868 A CN 107695868A
Authority
CN
China
Prior art keywords
chemical mechanical
inner cylindrical
mechanical polishing
liquid component
polishing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610461559.3A
Other languages
English (en)
Chinese (zh)
Inventor
B·钱
J·考兹休克
布鲁福 T·布鲁加罗拉斯
D·M·韦内齐亚莱
Y·童
D·卢戈
J·B·米勒
G·C·雅各布
M·W·德格鲁特
T·Q·陈
M·R·斯塔克
A·旺克
F·叶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Dow Global Technologies LLC
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/751,340 external-priority patent/US9586305B2/en
Application filed by ROHM AND HAAS ELECTRONIC MATER, Dow Global Technologies LLC filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN107695868A publication Critical patent/CN107695868A/zh
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/16—Catalysts
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • General Chemical & Material Sciences (AREA)
CN201610461559.3A 2015-06-26 2016-06-23 化学机械抛光垫及其制备方法 Pending CN107695868A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/751340 2015-06-26
US14/751,340 US9586305B2 (en) 2015-06-26 2015-06-26 Chemical mechanical polishing pad and method of making same
US15/163152 2016-05-24
US15/163,152 US9776300B2 (en) 2015-06-26 2016-05-24 Chemical mechanical polishing pad and method of making same

Publications (1)

Publication Number Publication Date
CN107695868A true CN107695868A (zh) 2018-02-16

Family

ID=57537165

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610461559.3A Pending CN107695868A (zh) 2015-06-26 2016-06-23 化学机械抛光垫及其制备方法

Country Status (7)

Country Link
US (1) US9776300B2 (https=)
JP (1) JP6870928B2 (https=)
KR (1) KR102477528B1 (https=)
CN (1) CN107695868A (https=)
DE (1) DE102016007775A1 (https=)
FR (1) FR3037834B1 (https=)
TW (1) TWI692494B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10144115B2 (en) 2015-06-26 2018-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making polishing layer for chemical mechanical polishing pad
US10092998B2 (en) 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
KR102594068B1 (ko) * 2021-10-12 2023-10-24 에스케이엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1226262A (zh) * 1996-07-29 1999-08-18 陶氏化学公司 一种链烷醇胺/二氧化碳加合物和用其制得的聚氨酯泡沫
CN1487965A (zh) * 2000-12-08 2004-04-07 �����ɷ� 热塑性聚氨酯泡沫体、其制造方法和由该泡沫体制成的研磨垫料
CN1539598A (zh) * 2003-04-15 2004-10-27 Jsr��ʽ���� 抛光垫及其生产方法
CN1717785A (zh) * 2002-11-27 2006-01-04 东洋橡胶工业株式会社 研磨垫及半导体器件的制造方法
CN1914241A (zh) * 2004-02-03 2007-02-14 罗门哈斯电子材料Cmp控股股份有限公司 聚氨酯抛光垫
US20080139684A1 (en) * 2004-10-27 2008-06-12 Ppg Industries Ohio, Inc. Process for preparing a polyurethane urea polishing pad

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DE1916330A1 (de) 1969-03-29 1970-10-08 Richard Zippel & Co Kg Farbspr Anlage zur Herstellung von grossen oder kompliziert geformten Formteilen aus fluessigen Mehrkomponenten-Kunststoffen
US3705821A (en) 1970-08-07 1972-12-12 Bayer Ag Process and apparatus for applying polyurethane foam-forming composition
US3954544A (en) 1974-06-20 1976-05-04 Thomas Hooker Foam applying apparatus
DE2538437C3 (de) 1975-08-29 1980-05-08 Elastogran Maschinenbau Gmbh & Co, 8021 Strasslach Mischvorrichtung für Mehrkomponentenkunststoffe mit Poren- oder Zellenstruktur, insbesondere Polyurethan
US4158535A (en) 1977-01-25 1979-06-19 Olin Corporation Generation of polyurethane foam
US5163584A (en) 1990-12-18 1992-11-17 Polyfoam Products, Inc. Method and apparatus for mixing and dispensing foam with injected low pressure gas
US6315820B1 (en) 1999-10-19 2001-11-13 Ford Global Technologies, Inc. Method of manufacturing thin metal alloy foils
WO2004046216A1 (en) * 2002-11-18 2004-06-03 Dong Sung A & T Co., Ltd. Method of fabricating polyurethane foam with micro pores and polishing pad tehrefrom
JP3776428B2 (ja) 2002-12-27 2006-05-17 株式会社加平 ポリウレタン発泡体シート及びそれを用いた積層体シートの製造方法
DE102005058292A1 (de) 2005-12-07 2007-06-14 Hennecke Gmbh Verfahren und Vorrichtung zur Herstellung von beschichteten Formteilen
WO2007119875A1 (ja) * 2006-04-19 2007-10-25 Toyo Tire & Rubber Co., Ltd. 研磨パッドの製造方法
JP4954762B2 (ja) 2007-03-27 2012-06-20 東洋ゴム工業株式会社 ポリウレタン発泡体の製造方法
US20090094900A1 (en) 2007-10-15 2009-04-16 Ppg Industries Ohio, Inc. Method of forming a polyurea polyurethane elastomer containing chemical mechanical polishing pad
US8551201B2 (en) * 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
US9144880B2 (en) * 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad
WO2014153048A1 (en) 2013-03-14 2014-09-25 Zte Wistron Telecom Ab Method and apparatus to adapt the number of harq processes in a distributed network topology
US9630293B2 (en) 2015-06-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad composite polishing layer formulation
US10105825B2 (en) 2015-06-26 2018-10-23 Rohm and Haas Electronics Materials CMP Holdings, Inc. Method of making polishing layer for chemical mechanical polishing pad
US9586305B2 (en) 2015-06-26 2017-03-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and method of making same
US10144115B2 (en) 2015-06-26 2018-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making polishing layer for chemical mechanical polishing pad
US9457449B1 (en) 2015-06-26 2016-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with composite polishing layer
US10092998B2 (en) 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US9539694B1 (en) 2015-06-26 2017-01-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composite polishing layer chemical mechanical polishing pad
US10005172B2 (en) 2015-06-26 2018-06-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-porosity method for forming polishing pad

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1226262A (zh) * 1996-07-29 1999-08-18 陶氏化学公司 一种链烷醇胺/二氧化碳加合物和用其制得的聚氨酯泡沫
CN1487965A (zh) * 2000-12-08 2004-04-07 �����ɷ� 热塑性聚氨酯泡沫体、其制造方法和由该泡沫体制成的研磨垫料
CN1717785A (zh) * 2002-11-27 2006-01-04 东洋橡胶工业株式会社 研磨垫及半导体器件的制造方法
CN1539598A (zh) * 2003-04-15 2004-10-27 Jsr��ʽ���� 抛光垫及其生产方法
CN1914241A (zh) * 2004-02-03 2007-02-14 罗门哈斯电子材料Cmp控股股份有限公司 聚氨酯抛光垫
US20080139684A1 (en) * 2004-10-27 2008-06-12 Ppg Industries Ohio, Inc. Process for preparing a polyurethane urea polishing pad

Also Published As

Publication number Publication date
KR102477528B1 (ko) 2022-12-15
FR3037834A1 (https=) 2016-12-30
TW201700555A (zh) 2017-01-01
DE102016007775A1 (de) 2016-12-29
US20160379840A1 (en) 2016-12-29
TWI692494B (zh) 2020-05-01
US9776300B2 (en) 2017-10-03
JP6870928B2 (ja) 2021-05-12
JP2017052078A (ja) 2017-03-16
KR20170001621A (ko) 2017-01-04
FR3037834B1 (fr) 2021-01-08

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SE01 Entry into force of request for substantive examination
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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180216

WD01 Invention patent application deemed withdrawn after publication