CN107682001A - 一种触摸屏开关、触摸屏及触摸屏开关的制作方法 - Google Patents
一种触摸屏开关、触摸屏及触摸屏开关的制作方法 Download PDFInfo
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Abstract
本发明提供一种触摸屏开关,包括玻璃基板、缓冲层、栅极绝缘层和第二金属层,还包括涂抹第二金属层上方且有一空心槽的平坦有机层;涂抹于平坦有机层上方、空心槽内表面及底部的第一介质层;设置第一介质层上方且一侧位于空心槽外,另一侧延伸至空心槽内的第三金属层;覆盖第一介质层及第三金属层上方的第二介质层,且对应空心槽所在区域上蚀刻有同时贯穿第二和第一介质层上下表面并远离第三金属层的两个第一通孔,以及贯穿第二介质层上下表面并位于第三金属层上方的两个第二通孔;覆盖第二介质层上方、两个第一通孔内表面及底部以及两个第二通孔内表面及底部的底部铟锡氧化物。实施本发明,既不压缩设计,也满足制程窗口,降低返工率并提升产量。
Description
技术领域
本发明涉及半导体技术领域,尤其涉及一种触摸屏开关、触摸屏及触摸屏开关的制作方法。
背景技术
内嵌式触摸屏ITP(In Cell Touch Panel)将触控功能整合于液晶显示器内,并通过侦测触控过程中在面板表面引发的光强弱变化来达到感测目的,具有成本更低、厚度更轻薄及应用更为方便等优点。
如图1所示,现有ITP产品上触摸屏开关通过蚀刻第一介质层TL1(InsulatingLayer1)和第二介质层IL2(Insulating Layer2)上的四个小孔来实现第三金属层M3(Metal3)与第二金属层M2(Metal 2)信号互通;其中,M3跨接于蚀刻在IL2的两个小孔上,M2跨接于另外同时蚀刻在IL2和IL1的两个小孔上,且M3和M2通过涂抹于四个小孔内表面以及IL2上表面的底部铟锡氧化物BITO(Bottom Indium Tin Oxide)相连。但是,如图2所示,由于M3退后值设计在0.6um时,M3跨接于四个小孔上,使得BITO无法搭接至M2,导致M3和M2的信号无法互通,因此需增加M3退后值为0.9um(如图1所示)才能保证设计可在制程能力范围内,这样既压缩了设计,也压缩了制程窗口。
发明内容
本发明实施例所要解决的技术问题在于,提供一种触摸屏开关、触摸屏及触摸屏开关的制作方法,既不压缩设计,也满足制程窗口,降低返工率并提升产量。
为了解决上述技术问题,本发明实施例提供了一种触摸屏开关,包括:
一玻璃基板;
一设置于所述玻璃基板上方的缓冲层;
一设置于所述缓冲层上方的栅极绝缘层;
一设置于所述栅极绝缘层上方的第二金属层;
还包括:一涂抹于所述第二金属层上方的平坦有机层,且所述平坦有机层上蚀刻有一开口向上的空心槽;
一涂抹于所述平坦有机层上方、所述空心槽内表面及其底部对应第二金属层所在区域上方的第一介质层;
一设置于所述第一介质层上方的第三金属层,且所述第三金属层的一侧位于所述空心槽外,另一侧沿所述第一介质层对应空心槽所在区域的一侧顶部边缘向下延伸至所述空心槽内;
一覆盖于所述第一介质层上方及所述第三金属层上方的第二介质层,且在所述第二介质层对应空心槽的所在区域上蚀刻有同时贯穿所述第二介质层和所述第一介质层上下表面并远离所述第三金属层的两个第一通孔,以及
蚀刻有贯穿所述第二介质层上下表面并位于所述第三金属层上方的两个第二通孔;
一覆盖于所述第二介质层上方、所述两个第一通孔内表面及其底部对应第二金属层所在区域上方以及所述两个第二通孔内表面及其底部对应第三金属层所在区域上方的底部铟锡氧化物。
其中,所述空心槽的外部轮廊呈四边形结构。
其中,所述第三金属层的外部轮廊呈“Z”字形结构。
其中,所述两个第二通孔均位于所述空心槽的上方。
本发明实施例又提供了一种触摸屏,包括前述的触摸屏开关。
本发明实施例还提供了一种触摸屏开关的制作方法,包括以下步骤:
设置玻璃基板;
在所述玻璃基板的上方设有从下往上依次排序的缓冲层、栅极绝缘层和第二金属层;
将平坦有机层涂抹于所述第二金属层的上方,并在所述平坦有机层上蚀刻有一开口向上的空心槽;
涂抹第一介质层于所述平坦有机层上方与所述空心槽内表面及其底部对应第二金属层所在区域上方;
设置第三金属层于所述第一介质层的上方,且将所述第三金属层的一侧位于所述空心槽外,另一侧沿所述第一介质层对应空心槽所在区域的一侧顶部边缘向下延伸至所述空心槽内;
将第二介质层覆盖于所述第一介质层的上方及所述第三金属层的上方,且在所述第二介质层对应空心槽的所在区域上蚀刻有同时贯穿所述第二介质层和所述第一介质层上下表面并远离所述第三金属层的两个第一通孔,以及蚀刻有贯穿所述第二介质层上下表面并位于所述第三金属层上方的两个第二通孔;
将底部铟锡氧化物覆盖于所述第二介质层上方、所述两个第一通孔内表面及其底部对应第二金属层所在区域上方以及所述两个第二通孔内表面及其底部对应第三金属层所在区域上方。
其中,所述空心槽的外部轮廊呈四边形结构。
其中,所述第三金属层的外部轮廊呈“Z”字形结构。
其中,所述两个第一通孔的深度均相等,且所述两个第二通孔的深度均相等。
其中,所述两个第二通孔均位于所述空心槽的上方。
实施本发明实施例,具有如下有益效果:
与传统的触摸屏开关相比,本发明设置平坦有机层,并将第三金属层沿平坦有机层上空心槽的外部轮廊线进行弯折,从而确保第三金属层无法同时跨接于四个通孔上,这样不但能够保持第三金属层原有的退后值设计(即不需增减第三金属层的长度),使得第三金属层和第二金属层的信号互通,还能满足原有制程窗口的要求,降低了返工率并提升产量。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,根据这些附图获得其他的附图仍属于本发明的范畴。
图1为现有技术中触摸屏开关的第三金属层与第二金属层信号互通正常时的局部剖视图;
图2为现有技术中触摸屏开关的第三金属层与第二金属层信号互通异常时的局部剖视图;
图3为本发明实施例一提供的一种触摸屏开关的局部剖视图;
图4为本发明实施例一提供的一种触摸屏开关的局部俯视图;
图5为本发明实施例三提供的一种触摸屏开关的制作方法的流程图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明作进一步地详细描述。
如图3和图4所示,为本发明实施例一中,提供的一种触摸屏开关,包括:
一玻璃基板Glass;
一设置于玻璃基板Glass上方的缓冲层Buffer;
一设置于缓冲层Buffer上方的栅极绝缘层GI;
一设置于栅极绝缘层GI上方的第二金属层M2;
还包括:一涂抹于第二金属层M2上方的平坦有机层PLN,且平坦有机层PLN上蚀刻有一开口向上的空心槽M;
一涂抹于平坦有机层PLN上方、空心槽M内表面及其底部对应第二金属层M2所在区域上方的第一介质层IL1;
一设置于第一介质层IL1上方的第三金属层M3,且第三金属层M3的一侧位于空心槽M外,另一侧沿第一介质层IL1对应空心槽M所在区域的一侧顶部边缘向下延伸至空心槽M内;
一覆盖于第一介质层IL1上方及第三金属层M3上方的第二介质层TL2,且在第二介质层TL2对应空心槽M的所在区域上蚀刻有同时贯穿第二介质层TL2和第一介质层IL1上下表面并远离第三金属层M3的两个第一通孔K1,以及
蚀刻有贯穿第二介质层TL2上下表面并位于第三金属层M3上方的两个第二通孔K2;
一覆盖于第二介质层TL2上方、两个第一通孔K1内表面及其底部对应第二金属层M2所在区域上方以及两个第二通孔K2内表面及其底部对应第三金属层M3所在区域上方的底部铟锡氧化物BITO。
可以理解的是,通过增加平坦有机层PLN上空心槽M的结构设计,使得第三金属层M3进行长度弯折,这样既能保持第三金属层M2原有的退后值设计(即不需增减第三金属层的长度,如0.6um),满足原有制程窗口的要求,还能实现第三金属层M3和第二金属层M2的信号互通。
更进一步的,空心槽M的外部轮廊结构可以设计成四边形、多边形、圆形等结构。
更进一步的,第三金属层M3的外部轮廊呈“Z”字形结构或“┐”形结构。
更进一步的,两个第二通孔K2均位于空心槽M的上方,这样就能满足原有制程窗口的要求。
相应于本发明实施例一中的一种触摸屏开关,本发明实施例二还提供了一种触摸屏,包括本发明实施例一中的触摸屏开关。由于本发明实施例二中的触摸屏开关与本发明实施例一中触摸屏开关具有相同的结构及连接关系,因此在此不再一一赘述。
如图3所示,相应于本发明实施例一中的一种触摸屏开关,本发明实施例三还提供了一种触摸屏开关的制作方法,包括以下步骤:
步骤S1、设置玻璃基板;
步骤S2、在所述玻璃基板的上方设有从下往上依次排序的缓冲层、栅极绝缘层和第二金属层;
步骤S3、将平坦有机层涂抹于所述第二金属层的上方,并在所述平坦有机层上蚀刻有一开口向上的空心槽;
步骤S4、涂抹第一介质层于所述平坦有机层上方与所述空心槽内表面及其底部对应第二金属层所在区域上方;
步骤S5、设置第三金属层于所述第一介质层的上方,且将所述第三金属层的一侧位于所述空心槽外,另一侧沿所述第一介质层对应空心槽所在区域的一侧顶部边缘向下延伸至所述空心槽内;
步骤S6、将第二介质层覆盖于所述第一介质层的上方及所述第三金属层的上方,且在所述第二介质层对应空心槽的所在区域上蚀刻有同时贯穿所述第二介质层和所述第一介质层上下表面并远离所述第三金属层的两个第一通孔,以及蚀刻有贯穿所述第二介质层上下表面并位于所述第三金属层上方的两个第二通孔;
步骤S7、将底部铟锡氧化物覆盖于所述第二介质层上方、所述两个第一通孔内表面及其底部对应第二金属层所在区域上方以及所述两个第二通孔内表面及其底部对应第三金属层所在区域上方。
其中,所述空心槽的外部轮廊呈四边形结构。
其中,所述第三金属层的外部轮廊呈“Z”字形结构。
其中,所述两个第一通孔的深度均相等,且所述两个第二通孔的深度均相等。
其中,所述两个第二通孔均位于所述空心槽的上方。
其中,所述第一介质层直接采用成膜工艺制作而成,所述第二介质层采用化学气相沉积成膜、曝光、蚀刻及去光阻工艺制作而成。
其中,所述底部铟锡氧化物采用物理气相沉积成膜、曝光、蚀刻及去光阻工艺制作而成。
实施本发明实施例,具有如下有益效果:
与传统的触摸屏开关相比,本发明设置平坦有机层,并将第三金属层沿平坦有机层上空心槽的外部轮廊线进行弯折,从而确保第三金属层无法同时跨接于四个通孔上,这样不但能够保持第三金属层原有的退后值设计(即不需增减第三金属层的长度),使得第三金属层和第二金属层的信号互通,还能满足原有制程窗口的要求,降低了返工率并提升产量。
以上所揭露的仅为本发明一种较佳实施例而已,当然不能以此来限定本发明之权利范围,因此依本发明权利要求所作的等同变化,仍属本发明所涵盖的范围。
Claims (10)
1.一种触摸屏开关,包括:
一玻璃基板(Glass);
一设置于所述玻璃基板(Glass)上方的缓冲层(Buffer);
一设置于所述缓冲层(Buffer)上方的栅极绝缘层(GI);
一设置于所述栅极绝缘层(GI)上方的第二金属层(M2);
其特征在于,还包括:一涂抹于所述第二金属层(M2)上方的平坦有机层(PLN),且所述平坦有机层(PLN)上蚀刻有一开口向上的空心槽(M);
一涂抹于所述平坦有机层(PLN)上方、所述空心槽(M)内表面及其底部对应第二金属层(M2)所在区域上方的第一介质层(IL1);
一设置于所述第一介质层(IL1)上方的第三金属层(M3),且所述第三金属层(M3)的一侧位于所述空心槽(M)外,另一侧沿所述第一介质层(IL1)对应空心槽(M)所在区域的一侧顶部边缘向下延伸至所述空心槽(M)内;
一覆盖于所述第一介质层(IL1)上方及所述第三金属层(M3)上方的第二介质层(TL2),且在所述第二介质层(TL2)对应空心槽(M)的所在区域上蚀刻有同时贯穿所述第二介质层(TL2)和所述第一介质层(IL1)上下表面并远离所述第三金属层(M3)的两个第一通孔(K1),以及
蚀刻有贯穿所述第二介质层(TL2)上下表面并位于所述第三金属层(M3)上方的两个第二通孔(K2);
一覆盖于所述第二介质层(TL2)上方、所述两个第一通孔(K1)内表面及其底部对应第二金属层(M2)所在区域上方以及所述两个第二通孔(K2)内表面及其底部对应第三金属层(M3)所在区域上方的底部铟锡氧化物(BITO)。
2.如权利要求1所述的触摸屏开关,其特征在于,所述空心槽(M)的外部轮廊呈四边形结构。
3.如权利要求2所述的触摸屏开关,其特征在于,所述第三金属层(M3)的外部轮廊呈“Z”字形结构。
4.如权利要求3所述的触摸屏开关,其特征在于,所述两个第二通孔(K2)均位于所述空心槽(M)的上方。
5.一种触摸屏,其特征在于,包括如权利要求1-4中任一项所述的触摸屏开关。
6.一种触摸屏开关的制作方法,其特征在于,包括以下步骤:
设置玻璃基板;
在所述玻璃基板的上方设有从下往上依次排序的缓冲层、栅极绝缘层和第二金属层;
将平坦有机层涂抹于所述第二金属层的上方,并在所述平坦有机层上蚀刻有一开口向上的空心槽;
涂抹第一介质层于所述平坦有机层上方与所述空心槽内表面及其底部对应第二金属层所在区域上方;
设置第三金属层于所述第一介质层的上方,且将所述第三金属层的一侧位于所述空心槽外,另一侧沿所述第一介质层对应空心槽所在区域的一侧顶部边缘向下延伸至所述空心槽内;
将第二介质层覆盖于所述第一介质层的上方及所述第三金属层的上方,且在所述第二介质层对应空心槽的所在区域上蚀刻有同时贯穿所述第二介质层和所述第一介质层上下表面并远离所述第三金属层的两个第一通孔,以及蚀刻有贯穿所述第二介质层上下表面并位于所述第三金属层上方的两个第二通孔;
将底部铟锡氧化物覆盖于所述第二介质层上方、所述两个第一通孔内表面及其底部对应第二金属层所在区域上方以及所述两个第二通孔内表面及其底部对应第三金属层所在区域上方。
7.如权利要求6所述的触摸屏开关的制作方法,其特征在于,所述空心槽的外部轮廊呈四边形结构。
8.如权利要求7所述的触摸屏开关的制作方法,其特征在于,所述第三金属层的外部轮廊呈“Z”字形结构。
9.如权利要求8所述的触摸屏开关的制作方法,其特征在于,所述两个第一通孔的深度均相等,且所述两个第二通孔的深度均相等。
10.如权利要求9所述的触摸屏开关的制作方法,其特征在于,所述两个第二通孔均位于所述空心槽的上方。
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