CN107681992A - A kind of six bit digital phase shifters - Google Patents
A kind of six bit digital phase shifters Download PDFInfo
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- CN107681992A CN107681992A CN201710980934.XA CN201710980934A CN107681992A CN 107681992 A CN107681992 A CN 107681992A CN 201710980934 A CN201710980934 A CN 201710980934A CN 107681992 A CN107681992 A CN 107681992A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/16—Networks for phase shifting
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/16—Networks for phase shifting
- H03H11/20—Two-port phase shifters providing an adjustable phase shift
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Abstract
The invention discloses a kind of six bit digital phase shifters, including 5.625 ° of phase-shift circuits, 11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits, 90 ° of phase-shift circuits and 180 ° of phase-shift circuits, 5.625 ° of phase-shift circuits, 11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits are associated between 90 ° of phase-shift circuits, 180 ° of phase-shift circuits with random order level.Using output of the two higher phase-shift circuit of phase shifter as phase shifter, output, phase shifter interpolar matching can be not only improved, and phase shifting accuracy can be effectively improved.
Description
Technical field
The present invention relates to phase shifter field, and in particular to a kind of six bit digital phase shifters.
Background technology
Phase shifter is the important component of phased-array radar T/R components, for changing the transmission phase of signal, it for
Communication equipment, radar system have considerable effect, decide the quality of whole system performance.
Phase shifter is generally divided into analog and digital two kinds, and digital phase shifter is not due to by voltage and the shadow of temperature change
Ring and be widely used in phased-array radar.It has a variety of implementation methods, and more commonly used has switch line style, loads line style, instead
Emitting and height-LPF type.The selection of phase shifter topological structure needs to be determined according to specific design objective, high-precision
Degree, high-performance, low cost is what phase shifter design person was pursued.
Existing digital phase shifter uses the structure such as Application No. 201010555904.2, and it includes what is cascaded successively
5.625 ° of phase-shift circuits, 11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits, 90 ° of phase-shift circuits and 180 ° of phase shifts
Circuit, with 5.625 ° for phase shift step value, 64 kinds of shift states can be realized altogether in the range of 0~360 °.Tied using this kind
The phase shifter of structure, its matching degree are only capable of reaching -8db, and matching degree is not high.
The content of the invention
In order to solve the above-mentioned technical problem the present invention provides a kind of six bit digital phase shifters, its matching degree is high.
The present invention is achieved through the following technical solutions：
A kind of six bit digital phase shifters, including 5.625 ° of phase-shift circuits, 11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits,
45 ° of phase-shift circuits, 90 ° of phase-shift circuits and 180 ° of phase-shift circuits, 5.625 ° of phase-shift circuits, 11.25 ° of phase-shift circuits, 22.5 °
Phase-shift circuit, 45 ° of phase-shift circuits are associated between 90 ° of phase-shift circuits, 180 ° of phase-shift circuits with random order level.Using this programme
Digital phase shifter structure, with 5.625 ° of steppings 0~360 ° of phase shift range in, can be achieved that the low differential loss of totally 64 kinds of states is high to be moved
The amount of phase shift of phase precision.Using the circuit structure, it can not only improve phase shifter interpolar matching, and can effectively improve phase shift essence
Degree.In general, the phase-shift states matching of big phase is general poor, and phase shifting accuracy is poor, if two big jayrator directly cascades,
Matching between the two can be caused excessively poor, but the matching of small phase-shift states is typically preferable, so small jayrator is inserted big
Its matching degree can be improved between jayrator, while alleviates phase shifting accuracy, improves overall phase shifting accuracy.
Preferably, 180 ° of phase-shift circuits are the input of above-mentioned cascade.Using 180 ° of phase-shift circuits as cascade
Input can strengthen the 1dB power outputs of phase shifter.180 ° of maximum phases as 6 bit digital phase shifters, its single 1dB are defeated
It is highest to go out power, as integrally-built input, can improve 1dB power outputs.
Preferably, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits, 11.25 ° of phase-shift circuits, 5.625 ° of phase-shift circuits
Cascade successively., can among larger 45 ° of small phases of insertion of phase compared to cascade system from big to small or from small to large
To cause the higher matching of overall acquisition, and reduce Phase-shifting Errors, improve phase shifting accuracy.
Preferably, 5.625 ° of phase-shift circuits include the first FET, the source electrode of first FET and
The first inductance is connected between drain electrode.5.625 ° of phase-shift circuits are controlled using single switching transistor, by changing control planning
Phase shift, when the conducting of the first FET, the first inductance are sufficiently large, whole circuit is considered as a series resistance, therefore electricity
Road phase-shift phase very little, can be used as reference bit, and the insertion loss of circuit is determined by M1 size.When the first FET ends
When, circuit equivalent is electric capacity and inductance in parallel, can produce smaller phase under the conditions of standing wave performance and smaller insertion loss is ensured
Move.The not only area of the circuit is small, simple in construction, insertion loss is small, is adapted to broadband application；And its performance is good.Its performance is led well
It is embodied in phase shifting accuracy height, insertion loss is small, return loss is small, standing-wave ratio is small.Using this topological jayrator, in 33-37GHz
In frequency band range, Phase-shifting Errors are less than 0.3 °, Insertion Loss is less than 0.6dB, standing wave is less than 1.3, have in whole broadband very excellent
Different performance.
Preferably, 11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits, 90 ° of phase-shift circuits use
π type topological structures, 180 ° of phase-shift circuits use high low pass phase-shift network.11.25 °, 22.5 °, 45 ° with 90 ° due to being small
Phase, although can also reach Phasing using high lowpass structures, shared area is larger, topological using the π types of deformation,
The area of integrated circuit can be reduced.
Further, the π types topological structure includes the 4th FET, the 5th FET, the 4th field-effect
The 4th inductance is connected between the source electrode of pipe and drain electrode, the drain electrode of the 4th FET is imitated by the 5th electric capacity and the 5th
Should the drain electrode of pipe be connected, the source electrode of the 4th FET is connected by the 6th electric capacity with the drain electrode of the 5th FET, institute
State the source ground of the 5th FET and drain electrode is connected with the 5th inductance of ground connection.
Preferably, 180 ° of phase-shift circuits include the 6th effect pipe, the 7th effect pipe, the 8th effect pipe and the 9th effect
Ying Guan, the source electrode of the 6th effect pipe passes sequentially through the 6th inductance, the 7th inductance is connected with the drain electrode of the 7th effect pipe, described
The source electrode of 8th effect pipe passes sequentially through the 7th electric capacity, the 8th electric capacity is connected with the drain electrode of the 9th effect pipe, the 6th effect
The drain electrode of pipe is connected with the drain electrode of the 8th effect pipe, and the source electrode of the 7th effect pipe is connected with the source electrode of the 9th effect pipe, institute
State the 6th inductance, the common port of the 7th inductance is connected with the 9th electric capacity of ground connection, the 7th electric capacity, the common port of the 8th electric capacity
It is connected with the 8th inductance of ground connection.
The present invention compared with prior art, has the following advantages and advantages：
1st, the present invention using two higher phase-shift circuit of phase shifter as phase shifter output, export, can not only improve phase shifter
Interpolar matching, and phase shifting accuracy can be effectively improved.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding the embodiment of the present invention, forms one of the application
Point, do not form the restriction to the embodiment of the present invention.In the accompanying drawings：
Fig. 1 is the theory diagram of the present invention.
Fig. 2 is the circuit theory diagrams of 5.625 ° of phase-shift circuits of the present invention.
Fig. 3 is a kind of circuit structure of π types topological structure of the present invention.
Fig. 4 is the circuit structure diagram of 180 ° of phase-shift circuits of the invention.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, with reference to embodiment and accompanying drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation are only used for explaining the present invention, do not make
For limitation of the invention.
Embodiment 1
The bit digital phase shifter of one kind six as shown in Figure 1, including 5.625 ° of phase-shift circuits, 11.25 ° of phase-shift circuits, 22.5 °
Phase-shift circuit, 45 ° of phase-shift circuits, 90 ° of phase-shift circuits and 180 ° of phase-shift circuits, it is characterised in that 5.625 ° of phase-shift circuits,
11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits are associated in 90 ° of phase-shift circuits, 180 ° of phase shifts with random order level
Between circuit.
Embodiment 2
90 ° of phase-shift circuits, 180 ° of phase-shift circuits can be as the inputs of this digital phase shifter, and 5.625 ° of phase shift electricity
Road, 11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits are cascaded with random order, and for example, it can be by from small to large
Order, also out of order can also be arranged by order from big to small, still, in order to strengthen the EDB power outputs of phase shifter, will
Input of 180 ° of phase-shift circuits as this digital phase shifter, and 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits, 11.25 ° of phase shift electricity
Road, 5.625 ° of phase-shift circuits cascade successively.
Using the circuit of the structure, it can effectively improve and improve phase shifter interpolar matching, and phase shift essence can be effectively improved
Degree.
Embodiment 3
In the principle of said structure, the present embodiment discloses a detailed embodiment.
As shown in Fig. 2 5.625 ° of phase-shift circuits include the first FET M1, the source of the first FET M1
The first inductance L1 is connected between pole and drain electrode.5.625 ° of phase-shift circuits are controlled using single switching transistor, are controlled by changing
Relation phase shift processed, when the conducting of the first FET, the first inductance are sufficiently large, whole circuit is considered as a series resistance,
Therefore circuit phase shift amount very little, can be used as reference bit, the insertion loss of circuit is determined by M1 size.When the first FET
During cut-off, circuit equivalent is electric capacity and inductance in parallel, can be produced smaller under the conditions of standing wave performance and smaller insertion loss is ensured
Phase shift.The not only area of the circuit is small, simple in construction, insertion loss is small, is adapted to broadband application；And its performance is good.Its performance is good
It is mainly reflected in phase shifting accuracy height, insertion loss is small, return loss is small, standing-wave ratio is small.Using this topological jayrator, in 33-
In 37GHz frequency band ranges, Phase-shifting Errors are less than 0.3 °, Insertion Loss is less than 0.6dB, standing wave is less than 1.3, have in whole broadband non-
Chang Youyi performance.
11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits, 90 ° of phase-shift circuits use π type topological structures,
180 ° of phase-shift circuits use high low pass phase-shift network.
π types topological structure can use following structure：Including the second FET M2, the 3rd FET M3, described second
The second inductance L2 is connected between the source electrode of FET and drain electrode, the drain electrode of the second FET M2 passes sequentially through first
Electric capacity C1, the second electric capacity C2 are connected with the 3rd FET M3 drain electrode, and the source electrode of the second FET M2 passes sequentially through
3rd electric capacity C3, the 4th electric capacity C4 are connected with the 3rd FET M3 drain electrode, the source ground of the 3rd FET M3
And drain electrode is connected with the 3rd inductance L3 of ground connection.Specifically, 11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits,
90 ° of phase-shift circuits use the π type topological structures.Using the phase-shift circuit of the structure, the amount of shifting to is little, also is adapted for using height
Open network realizes that its advantage is also that chip area is small, Insertion Loss is small.As the second FET M2 shut-offs, the 3rd FET M3
During opening, circuit equivalent position low pass pin network, phase delay is produced, as the second FET M2 openings, the 3rd FET M3
During shut-off, the 3rd inductance L3 is in parallel with the 3rd FET M3 electric capacity in circuit, the second inductance L2 and the first electric capacity C1, second
An electric capacity C2 mid-shunt, phase shift is produced under two states, meanwhile, the 3rd inductance L3 passes through the 3rd FET M3 access networks
Network, and the second FET M2, the 3rd FET M3-play the Insertion Loss fluctuation that can be adjusted in whole broadband.3rd inductance L3
There is a loop to ground, low side Insertion Loss is larger when can cause low pass state, solves this problem and only increases inductance value, but increases
Big inductance value can make standing wave be deteriorated, while phase shift fluctuation increase, therefore need to consider the suitable inductance value of selection.In addition, by
In using IBM 0.13um BiCMOS techniques, without small capacitances, so under 11.25 ° of states with two electric capacity it is in parallel come
Increase capacitance.For example, using this topology, in 33-37GHz frequency ranges, 11.25 ° of Phase-shifting Errors be less than 0.3 °, Insertion Loss it is small
It is better than 1.3 in 1.2dB, standing wave；22.5 ° of Phase-shifting Errors are less than 1.2 °, Insertion Loss is less than 1.3dB, standing wave is better than 1.5；45 ° of phase shifts miss
Difference is less than 1.2 °, Insertion Loss is less than 2dB, standing wave is better than 1.5；90 ° of Phase-shifting Errors are less than 2 °, Insertion Loss is less than 4dB, standing wave is better than 1.6.
π types topological structure as shown in Figure 3 can also use another circuit structure, and it includes the 4th FET M4, the 5th
FET M5, the 4th inductance L4, the 4th field-effect are connected between the source electrode of the 4th FET M4 and drain electrode
Pipe M4 drain electrode is connected by the 5th electric capacity C5 with the drain electrode of the 5th FET, and the source electrode of the 4th FET leads to successively
Cross the 6th electric capacity C6 with the 5th FET M5 drain electrode to be connected, the source ground of the 5th FET and drain electrode is connected with
5th inductance L5 of ground connection.Specifically, 180 ° of phase-shift circuits use the π type topological structures.Its principle and a kind of upper circuit theory
It is identical.
As shown in figure 4,180 ° of phase-shift circuits include the 6th effect pipe M6, the 7th effect pipe M7, the 8th effect pipe M8
With the 9th effect pipe M9, the source electrode of the 6th effect pipe passes sequentially through the 6th inductance L6, the 7th inductance L7 and the 7th effect pipe
M7 drain electrode is connected, and the source electrode of the 8th effect pipe M8 passes sequentially through the 7th electric capacity C7, the 8th electric capacity C8 and the 9th effect pipe
Drain electrode be connected, the drain electrode of the 6th effect pipe is connected with the drain electrode of the 8th effect pipe, the source electrode of the 7th effect pipe with
The source electrode of 9th effect pipe is connected, and the 6th inductance, the common port of the 7th inductance are connected with the 9th electric capacity C9 of ground connection, described
7th electric capacity, the common port of the 8th electric capacity are connected with the 8th inductance L8 of ground connection.Transmission line is replaced using phase-shift network, works as letter
Number from network switching when, obtain different phases, so as to obtain phase shift, major advantage is to design with frequency change phase
Move, wider frequency band and preferable frequency response can be obtained, 4 metal-oxide-semiconductors are selected not as switch by switching on-off
With path realize the purpose of phase shift.Using 180 ° of phase shifts of this structure, it is possible to achieve less Phase-shifting Errors.Illustrate
Bright, using this topology, in 33-376GHz frequency ranges, 180 ° of jayrator Phase-shifting Errors are less than 2.5 °, that Insertion Loss is less than 5dB, standing wave is excellent
In 1.5.
Above-mentioned 5.625 ° of phase-shift circuits, 11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits, 90 ° of phase shifts
Independent voltage control is respectively adopted in circuit and 180 ° of phase-shift circuits.
Using the digital phase shifter of the present embodiment, it can bring up to matching degree -10db to -12db, and existing phase shift
Its matching degree of device reaches as high as -8db, i.e. this programme is greatly improved the matching degree of phase shifter.
Above-described embodiment, the purpose of the present invention, technical scheme and beneficial effect are carried out further
Describe in detail, should be understood that the embodiment that the foregoing is only the present invention, be not intended to limit the present invention
Protection domain, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc., all should include
Within protection scope of the present invention.
Claims (7)
1. a kind of six bit digital phase shifters, including 5.625 ° of phase-shift circuits, 11.25 ° of phase-shift circuits, 22.5 ° of phase-shift circuits, 45 °
Phase-shift circuit, 90 ° of phase-shift circuits and 180 ° of phase-shift circuits, it is characterised in that 5.625 ° of phase-shift circuits, 11.25 ° of phase shift electricity
Road, 22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits are associated between 90 ° of phase-shift circuits, 180 ° of phase-shift circuits with random order level.
2. a kind of six bit digitals phase shifter according to claim 1, it is characterised in that 180 ° of phase-shift circuits are above-mentioned
The input of cascade.
A kind of 3. six bit digitals phase shifter according to claim 1, it is characterised in that 22.5 ° of phase-shift circuits, 45 °
Phase-shift circuit, 11.25 ° of phase-shift circuits, 5.625 ° of phase-shift circuits cascade successively.
4. a kind of six bit digitals phase shifter according to claim 1, it is characterised in that 5.625 ° of phase-shift circuits include
First FET, the first inductance is connected between the source electrode of first FET and drain electrode.
A kind of 5. six bit digitals phase shifter according to claim 1, it is characterised in that 11.25 ° of phase-shift circuits,
22.5 ° of phase-shift circuits, 45 ° of phase-shift circuits, 90 ° of phase-shift circuits use π type topological structures, and 180 ° of phase-shift circuits are using height
Logical phase-shift network.
6. a kind of six bit digitals phase shifter according to claim 5, it is characterised in that the π types topological structure includes the
Four FETs, the 5th FET, are connected with the 4th inductance between the source electrode of the 4th FET and drain electrode, and described
The drain electrode of four FETs is connected by the 5th electric capacity with the drain electrode of the 5th FET, and the source electrode of the 4th FET leads to
Cross the 6th electric capacity with the drain electrode of the 5th FET to be connected, the source ground of the 5th FET and drain electrode is connected with ground connection
The 5th inductance.
7. a kind of six bit digitals phase shifter according to claim 1, it is characterised in that 180 ° of phase-shift circuits include the
Six effect pipes, the 7th effect pipe, the 8th effect pipe and the 9th effect pipe, the source electrode of the 6th effect pipe pass sequentially through the 6th electricity
Sense, the 7th inductance are connected with the drain electrode of the 7th effect pipe, and the source electrode of the 8th effect pipe passes sequentially through the 7th electric capacity, the 8th electricity
Appearance is connected with the drain electrode of the 9th effect pipe, and the drain electrode of the 6th effect pipe is connected with the drain electrode of the 8th effect pipe, and the described 7th
The source electrode of effect pipe is connected with the source electrode of the 9th effect pipe, and the 6th inductance, the common port of the 7th inductance are connected with ground connection
9th electric capacity, the 7th electric capacity, the common port of the 8th electric capacity are connected with the 8th inductance of ground connection.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710980934.XA CN107681992A (en) | 2017-10-20 | 2017-10-20 | A kind of six bit digital phase shifters |
| CN201811069489.2A CN109194303A (en) | 2017-10-20 | 2018-09-13 | A kind of six bit digital phase shifters |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710980934.XA CN107681992A (en) | 2017-10-20 | 2017-10-20 | A kind of six bit digital phase shifters |
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| CN107681992A true CN107681992A (en) | 2018-02-09 |
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| CN201710980934.XA Pending CN107681992A (en) | 2017-10-20 | 2017-10-20 | A kind of six bit digital phase shifters |
| CN201811069489.2A Pending CN109194303A (en) | 2017-10-20 | 2018-09-13 | A kind of six bit digital phase shifters |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616723A (en) * | 2018-12-19 | 2019-04-12 | 上海秦芯信息科技有限公司 | A kind of high-precision phase shifter applied to 5G millimeter wave base station |
| CN109617536A (en) * | 2018-12-27 | 2019-04-12 | 复旦大学 | A kind of X-band phase shifter |
| CN110854482A (en) * | 2019-11-22 | 2020-02-28 | 南京汇君半导体科技有限公司 | High-frequency switch type phase shifter |
| CN110912533A (en) * | 2019-12-12 | 2020-03-24 | 重庆西南集成电路设计有限责任公司 | 360-degree range step-by-step combined radio frequency phase adjusting circuit |
| CN111384477A (en) * | 2018-12-27 | 2020-07-07 | 财团法人工业技术研究院 | Broadband phase shifter and phase array module using same |
| CN113162581A (en) * | 2021-03-22 | 2021-07-23 | 中国电子科技集团公司第十三研究所 | Broadband digital phase shifter based on GaN HEMT device |
| CN115622532A (en) * | 2022-12-16 | 2023-01-17 | 天津中科海高微波技术有限公司 | Numerical control phase shifting circuit of ultra-wideband phased array radar |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008193309A (en) * | 2007-02-02 | 2008-08-21 | Nec Electronics Corp | Bit phase shifter |
| CN102148416B (en) * | 2010-11-24 | 2013-08-28 | 南京理工大学 | Microwave and millimeter wave ultra wide band six-bit microwave monolithic integrated circuit (MMIC) digital phase shifter |
| CN202839906U (en) * | 2012-09-26 | 2013-03-27 | 成都嘉纳海威科技有限责任公司 | Microwave single-chip microcomputer numerical control phase shifter |
| KR20140072355A (en) * | 2012-12-03 | 2014-06-13 | 한국전자통신연구원 | Transmitting and receiving beam forming apparatus for active phased array antenna |
| CN204349955U (en) * | 2014-12-26 | 2015-05-20 | 成都华光瑞芯微电子股份有限公司 | A kind of phase switcher chip |
-
2017
- 2017-10-20 CN CN201710980934.XA patent/CN107681992A/en active Pending
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2018
- 2018-09-13 CN CN201811069489.2A patent/CN109194303A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616723A (en) * | 2018-12-19 | 2019-04-12 | 上海秦芯信息科技有限公司 | A kind of high-precision phase shifter applied to 5G millimeter wave base station |
| CN109616723B (en) * | 2018-12-19 | 2021-07-13 | 上海秦芯信息科技有限公司 | High-precision phase shifter applied to 5G millimeter wave base station |
| CN109617536A (en) * | 2018-12-27 | 2019-04-12 | 复旦大学 | A kind of X-band phase shifter |
| CN111384477A (en) * | 2018-12-27 | 2020-07-07 | 财团法人工业技术研究院 | Broadband phase shifter and phase array module using same |
| CN110854482A (en) * | 2019-11-22 | 2020-02-28 | 南京汇君半导体科技有限公司 | High-frequency switch type phase shifter |
| WO2021098195A1 (en) * | 2019-11-22 | 2021-05-27 | 南京汇君半导体科技有限公司 | High-frequency switch-type phase shifter |
| CN110912533A (en) * | 2019-12-12 | 2020-03-24 | 重庆西南集成电路设计有限责任公司 | 360-degree range step-by-step combined radio frequency phase adjusting circuit |
| CN113162581A (en) * | 2021-03-22 | 2021-07-23 | 中国电子科技集团公司第十三研究所 | Broadband digital phase shifter based on GaN HEMT device |
| CN115622532A (en) * | 2022-12-16 | 2023-01-17 | 天津中科海高微波技术有限公司 | Numerical control phase shifting circuit of ultra-wideband phased array radar |
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| Publication number | Publication date |
|---|---|
| CN109194303A (en) | 2019-01-11 |
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Application publication date: 20180209 |