CN204349955U - A kind of phase switcher chip - Google Patents
A kind of phase switcher chip Download PDFInfo
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- CN204349955U CN204349955U CN201420836502.3U CN201420836502U CN204349955U CN 204349955 U CN204349955 U CN 204349955U CN 201420836502 U CN201420836502 U CN 201420836502U CN 204349955 U CN204349955 U CN 204349955U
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Abstract
Phase switcher chip of the present utility model is only integrated with phase-shift circuit and switching circuit, more than independent chip functions, fewer than multifunction chip function, the phse conversion of microwave signal and the switching of receiving and transmitting signal is realized by the cascade of microwave switch and phase shifter, wherein phase-shift circuit variable signal phase place, the transmitting-receiving path of switching circuit to signal switches.The public termination phase-shift circuit of switching circuit, switching circuit comprises receiving branch and the transmitting branch of symmetrical configuration, by C and
signal control signal path break-make; Phase-shift circuit is-180 degree jayrators ,-22.5 degree jayrators ,-45 degree jayrators ,-11.25 degree jayrators ,-90 degree jayrators connect in turn, each jayrator has an elementary path and a phase shift path respectively, and each jayrator provides power by external drive circuit.Phase switcher chip adopts 0.5 μm of pHEMT technique encapsulation.It is high that design of the present utility model can realize phase shifting accuracy, and switching speed is fast, sensitive technique effect.
Description
Technical field
The utility model relates to radio circuit field, particularly relates to a kind of phase switcher chip.
Background technology
Phased array radar is that a kind of novel active electrical sweeps array multifunction radar, and it not only has the function of conventional radar, and has other radio-frequency enabled.General radar beam scanning realizes by the rotation of radar antenna, is called as mechanical scanning, and phased array radar is that the sensing of the mode control radar wave beam of electricity consumption changes and carries out scanning discovery target, and this mode is called as electric scanning.Although phased array radar can not make electromagnetic beam rotate by rotable antenna as other radars, carry out 360 degree of search to target, it has oneself " unique skill ", and that uses exactly " phase shifter " realizes electromagnetic beam and rotate.Phase shifter sends electronic signal by computer and controls, and therefore the beam switchover speed of phased array radar is more faster than traditional mechanical scanning radar, improves the ability of its antagonism highly maneuvering target.
Phase shifter is the indispensable device of phased array radar, the change of radar beam is just caused just because of electronic signal control phase shifter travel(l)ing phase, the major function of phase shifter is from a phase transition to another phase place by signal, such radar beam of going out just changes direction according to phase place change, the left side of the present antenna array of such as radar beam, but worry that enemy's aircraft has been carried out in the right area of antenna arrays of radar, only need the phase place switching signal, on the right of just having made radar beam alter course.
From available data, domestic phase shift or the switch chip having various kinds, also have integrated attenuator, LNA, drive put, the multifunction chip of the device such as phase shifter, but the chip being only integrated with phase shifter and switch is rarely found.In more international famous major companies, as also seldom there are the chip being only integrated with switch and phase shifter in the companies such as MACOM, MAXIM, Microsemi.Under some actual conditions, client there is no need to pursue the very comprehensive chip of function, and function is more, and price is also higher, and volume and power consumption are also larger.Here is the Development Status of some company's phase shifters.
In X-band phase shifter, the product that Hittite company is releasing has HMC642LC5, and frequency range is 9-12GHz, RMS is 3.5 °, Insertion Loss 7dB, input standing wave-14dB.
2008, M/A COM Inc. was proposed 6 X-band 8-12GHz phase shifter MAPS-010166, and phase shift mean square error (RMS) value is 5 °.CMOS Automatic level control, Insertion Loss 6.9-9dB, standing wave is less than-10dB.
The product of UMS company has CHP3015-QDG, and frequency range is 8.5-10.5GHz, 6 bit phase shifter, and RMS is 4 °, and Insertion Loss 8dB, standing wave is less than-10dB.
Studies in China X-band phase shifter have NC1267C-8510, frequency range is 8.5-10GHz, RMS value is 2.5 °, and Insertion Loss 7.3-9dB, amplitude fluctuation 1dB, standing wave is less than 1.6.
Above development situation can be found out, the subject matter of existing X-band phase shifter is that phase shifting accuracy is not high, reacts insensitive, can not fully meet radar system needs.
Technical problem to be solved in the utility model is to provide a kind of to the phase shift of X-band signal and the chip circuit realizing transceiver handoff functionality, can realize phase shifting accuracy high, and switching speed is fast, sensitive object.
Summary of the invention
For solving the problems of the technologies described above, phase switcher chip of the present utility model is only integrated with phase shifter and switch, more than independent chip functions, fewer than multifunction chip function, the phse conversion of microwave signal and the switching of receiving and transmitting signal is realized by the cascade of microwave switch and phase shifter, wherein phase shifter variable signal phase place, the transmitting-receiving path of microwave switch to signal switches.This phase switcher chip phase shifting accuracy is high, and switching speed is fast, is quick on the draw.
The utility model is achieved through the following technical solutions.
A kind of phase switcher chip, comprise switching circuit and phase-shift circuit, the public termination phase-shift circuit of switching circuit, switching circuit comprises receiving branch and the transmitting branch of symmetrical configuration, by C and
signal control signal path break-make; Phase-shift circuit is-180 degree jayrators ,-22.5 degree jayrators ,-45 degree jayrators ,-11.25 degree jayrators ,-90 degree jayrators connect in turn, and each jayrator has an elementary path and a phase shift path respectively.
C signal is high,
when signal is low, signal is from described switching circuit common port to output, and transmitting branch conducting, receiving branch disconnects, and when signal is contrary, then receiving branch conducting, transmitting branch disconnects.
-180 degree jayrators ,-22.5 degree jayrators ,-45 degree jayrators ,-11.25 degree jayrators ,-90 degree jayrators provide driving force by the driver element circuit of correspondence respectively.
Further, driver element circuit comprises electrostatic discharge protection circuit.
The signal transmission passage of-11.5 degree jayrators ,-22.5 degree jayrators and-45 degree jayrators adopts the structure of two inductance series connection, when the supply power voltage of described jayrator is high voltage, jayrator signal passes through through described elementary path, when the supply power voltage of described jayrator is low-voltage, jayrator signal passes through through described phase shift path.
-180 degree jayrators and-90 jayrator signal transmission passages are high-pass and low-pass filter structure.
Again further, phase switcher chip adopts 0.5 μm of pHEMT technique.
Accompanying drawing explanation
Fig. 1 is the utility model theory diagram.
Fig. 2 is the utility model specific embodiment driver element electrical block diagram.
Fig. 3 is the utility model specific embodiment phase-shift circuit structural representation.
Fig. 4 is the utility model specific embodiment switching circuit structure schematic diagram.
Embodiment
Arbitrary feature disclosed in this specification (comprising any claim, summary and accompanying drawing), unless specifically stated otherwise, all can be replaced by other equivalences or the alternative features with similar object.That is, unless specifically stated otherwise, each feature is an example in a series of equivalence or similar characteristics.Be simultaneously the description to technical equivalents to the description of alternative features in this specification, the donation to the public must not be considered as.
This specification (comprising any claim, summary and accompanying drawing), if middle term has general sense and this area spy is significant simultaneously, if no special instructions, is all defined as the peculiar implication in this area.
The technical solution of the utility model is further illustrated by embodiment below in conjunction with accompanying drawing.
As shown in Figure 1, be the utility model theory diagram.Phase switcher chip of the present utility model, comprises switching circuit and phase-shift circuit, and adopt the scheme of switching circuit and phase-shift circuit cascade, the public termination phase-shift circuit of switching circuit, switching circuit comprises receiving branch and the transmitting branch of symmetrical configuration, by C and
signal control signal path break-make; Phase-shift circuit is-180 degree jayrators ,-22.5 degree jayrators ,-45 degree jayrators ,-11.25 degree jayrators ,-90 degree jayrators connect in turn, and each jayrator has an elementary path and a phase shift path respectively.Rin is that chip receives input, and Tout is for launching output, and switching circuit is mainly used in switching launch and accept port.Com end is that common port plays transmitting input respectively or receives the effect exported.GaAs pseudomorphic high electron mobility transistors (GaAs pHEMT) selected by phase switcher chip active device.
As shown in Figure 2, be the utility model specific embodiment driver element electrical block diagram.The VCC that driver element circuit is each jayrator holds the VB of namely Fig. 3 to hold and VBC end provides driving force, the corresponding driver element of each jayrator.ESD electrostatic discharge protection circuit is comprised in driver element circuit, entirety is formed by connecting by some diodes, the counterfeit High Electron Mobility Transistor of GaAs (GaAs pHEMT), current-limiting resistance, the corresponding driver element circuit of each jayrator, by each jayrator of metal complimentary oxide semiconductor (CMOS) Automatic level control.When inputting C=0V, this drive circuit OUT1=0V, OUT2=-5V; When inputting C=5V, this drive circuit OUT1=-5V, OUT2=0V.In ESD protection circuit, the more protective capacities of number of diodes is stronger, but can occupy larger area too much, generally between 10 ~ 30, uses 19 in the present embodiment.
As shown in Figure 3, in the utility model specific embodiment from left to right, five element circuits are-180 degree jayrators respectively,-11.5 degree jayrators,-22.5 degree jayrators ,-45 degree jayrators ,-90 degree jayrators, each jayrator has been respectively an elementary path and a phase shift path, and amount of phase shift is exactly the phase place of phase shift path and the phase difference of elementary path.-11.5o jayrator ,-22.5o jayrator ,-45o jayrator are few due to amount of phase shift, adopt the form of two inductance series connection to realize, these three jayrator structures and principle just the same, just inside circuit parameter is different.Signal transmission passage adopts the structure of two inductance series connection, when the supply power voltage of described jayrator is high level, jayrator signal passes through through described elementary path, and when the supply power voltage of described jayrator is low level, jayrator signal passes through through described phase shift path.For-22.5o jayrator, when VB3 is 0V, V8, V13 conducting, is similar to a small resistor, and V13 place link forms T-shaped induction structure is similar to low pass filter, so signal mainly passes through through V8.When VB3 is-5V, V8, V13 turn off, and signal is through phase shift path process, and phase-shift circuit becomes two series inductance forms, form phase shift process like this by switching.-180 ° of jayrators and-90 ° of jayrators due to phase difference value large, signal transmission passage is high-pass and low-pass filter structure.When VB4 is 0V, VBC4 is-5V, and these two signals are complementary relationships, and V3, V4, V18 open, and V15, V16 close, and signal arrives output, because branch road also form low-pass filter structure below mainly through V3, V4.And VB4 is-5V, when VBC4 is 0V, signal is delivered to OUT end through L15, L16, L17, L18, and signal path extends, and forms phase shift.
The general principle of switching circuit be exactly switch control rule letter C and
signal control signal path break-make.As shown in Figure 4, when being high level for Tout, C signal,
for V3 conducting on Tout primary link during low level, V1, V2 subcircuit disables, such signal is expedite holds Tout to hold conducting from COM.And receiving branch V6 ends, primary link ends, V4, V5 branch road conducting simultaneously.Because the transistor of Fig. 4 plays on-off action, so drain electrode and source electrode position can exchange, namely the both sides port of transistor not only can do source electrode but also can drain.
The above; be only the utility model preferably embodiment; but protection range of the present utility model is not limited thereto; any people being familiar with this technology is in the technical scope disclosed by the utility model; the change that can expect easily or replacement, all should be encompassed within protection range of the present utility model.
Claims (7)
1. a phase switcher chip, comprises switching circuit and phase-shift circuit, and the public termination phase-shift circuit of switching circuit, is characterized in that:
Switching circuit comprises receiving branch and the transmitting branch of symmetrical configuration, by C and
signal control signal path break-make; Phase-shift circuit is-180 degree jayrators ,-22.5 degree jayrators ,-45 degree jayrators ,-11.25 degree jayrators ,-90 degree jayrators connect in turn, and described each jayrator has an elementary path and a phase shift path respectively.
2. phase switcher chip according to claim 1, is characterized in that, described C signal is high,
when signal is low, signal is from described switching circuit common port to output, and transmitting branch conducting, receiving branch disconnects, and when signal is contrary, then receiving branch conducting, transmitting branch disconnects.
3. phase switcher chip according to claim 1 and 2, is characterized in that, described-180 degree jayrators ,-22.5 degree jayrators ,-45 degree jayrators ,-11.25 degree jayrators ,-90 degree jayrators provide driving force by the driver element circuit of correspondence respectively.
4. phase switcher chip according to claim 3, is characterized in that, described driver element circuit comprises electrostatic discharge protection circuit.
5. phase switcher chip according to claim 4, it is characterized in that, the signal transmission passage of described-11.5 degree jayrators ,-22.5 degree jayrators and-45 degree jayrators adopts the structure of two inductance series connection, when the supply power voltage of described jayrator is high voltage, jayrator signal passes through through described elementary path, when the supply power voltage of described jayrator is low-voltage, jayrator signal passes through through described phase shift path.
6. phase switcher chip according to claim 5, is characterized in that, described-180 degree jayrators and-90 jayrator signal transmission passages are high-pass and low-pass filter structure.
7. phase switcher chip according to claim 6, is characterized in that, described phase switcher chip adopts 0.5 μm of pHEMT technique.
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| CN201420836502.3U CN204349955U (en) | 2014-12-26 | 2014-12-26 | A kind of phase switcher chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105207627A (en) * | 2015-09-10 | 2015-12-30 | 鑫高益医疗设备股份有限公司 | Phase calibration structure of magnetic resonance radio frequency power amplifier |
| CN109194303A (en) * | 2017-10-20 | 2019-01-11 | 胡建全 | A kind of six bit digital phase shifters |
| CN112993496A (en) * | 2019-12-12 | 2021-06-18 | 南京恒波科技有限公司 | Low-cost adjustable fixed phase shifter of phase place |
| CN115699448A (en) * | 2020-05-29 | 2023-02-03 | 华为技术有限公司 | Radio frequency chip |
-
2014
- 2014-12-26 CN CN201420836502.3U patent/CN204349955U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105207627A (en) * | 2015-09-10 | 2015-12-30 | 鑫高益医疗设备股份有限公司 | Phase calibration structure of magnetic resonance radio frequency power amplifier |
| CN109194303A (en) * | 2017-10-20 | 2019-01-11 | 胡建全 | A kind of six bit digital phase shifters |
| CN112993496A (en) * | 2019-12-12 | 2021-06-18 | 南京恒波科技有限公司 | Low-cost adjustable fixed phase shifter of phase place |
| CN115699448A (en) * | 2020-05-29 | 2023-02-03 | 华为技术有限公司 | Radio frequency chip |
| CN115699448B (en) * | 2020-05-29 | 2024-05-17 | 华为技术有限公司 | Radio frequency chip |
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