CN109617536A - A kind of X-band phase shifter - Google Patents
A kind of X-band phase shifter Download PDFInfo
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- CN109617536A CN109617536A CN201811616039.0A CN201811616039A CN109617536A CN 109617536 A CN109617536 A CN 109617536A CN 201811616039 A CN201811616039 A CN 201811616039A CN 109617536 A CN109617536 A CN 109617536A
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- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 238000001914 filtration Methods 0.000 claims abstract description 18
- 230000010363 phase shift Effects 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims 1
- 238000003780 insertion Methods 0.000 abstract description 6
- 230000037431 insertion Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000306 component Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/16—Networks for phase shifting
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Abstract
The invention belongs to technical field of integrated circuits, specially a kind of X-band phase shifter.Including the first transistor, grid connects control signal, and source and drain is respectively as input terminal and output end；π type low-pass filter structure forms π type structure by inductance and two capacitors；Second transistor, grid connect control signal, and source and drain is in parallel with an inductance and a capacitor, are connected among two capacitors in source and drain one end and π type structure, one end ground connection.When the first transistor conducting second transistor shutdown, input signal passes through low pass filtering access；When the first transistor shutdown, second transistor conducting, input signal passes through bandpass filtering access.By controlling the conducting and cut-off of the first transistor and second transistor, realize that signal transmits in different paths.The present invention solves the problems, such as that traditional high-pass/low-pass structure phase shifter cannot achieve when realizing small phase phase shift since ideal component values are excessive or too small, and circuit is small in size, it is high to shift to precision, insertion loss is small.
Description
Technical field
The invention belongs to technical field of integrated circuits, and in particular to a kind of X-band phase shifter.
Background technique
With the development of communication technology, phased array system is in radar, satellite broadcast communication system, GPS navigation system
Using more and more extensive.Phased array is to be arranged in array antenna, each transmitting/receiving unit by many radiation and receiving unit
Equipped with phase shifter.Computer changes the phase of the radio wave of antenna transmitting by control phase shifter, so that the lobe of radar
It can realize that phase deflects in the sky, complete to search for sky.Core component in phased-array radar is T/R(transmitting-receiving) component, and move
Phase device is the key component in T/R component again.Therefore, the quality of phase shifter performance directly affects the property of entire phased array system
Energy.The main performance index of phase shifter have working band, phase shifting accuracy, return loss, insertion loss, standing-wave ratio, switch time,
Power capacity etc..Whether phase shifter can continuously be divided into analog phase shifter and digital phase shifter according to phase change.Traditional number
Passive phase shifter has load line style phase shifter, reflection-type phase shifter, switching wiring phase shifter, high Low-Pass Filter phase shifter.Loaded line
Type phase shifter has the decaying good contour performance of little standing wave when realizing small phase phase shift, but is not suitable for big phase shift.Reflection-type is moved
Phase device power capacity with higher, but due to needing coupler, the size of circuit is often bigger than normal.Switching wiring phase shifter principle
Simply, easily design.But due to the presence of effect of dispersion, the phase shifter working band is relatively narrow.The phase shift essence of high Low-Pass Filter phase shifter
Degree is higher, and working band is wider, but area occupied reaches, and Insertion Loss is larger.Active phase shifter generally uses orthogonal vector to synthesize
Method.The orthogonal signal of two-way is amplified different multiples by variable gain amplifier, so that composite signal realizes specific phase shift.
Summary of the invention
In view of this, the X-band phase shifter low the purpose of the present invention is to provide a kind of phase shifting accuracy height, insertion loss.
X-band phase shifter provided by the invention is connected in parallel with a capacitor by the metal-oxide-semiconductor switch with resonant inductance, so that
Inductance needed for circuit reduces, and at the same time the shutdown capacitor of required metal-oxide-semiconductor can be reduced, to reduce circuit area, improves phase shift
Precision reduces insertion loss.
X-band phase shifter provided by the invention, circuit structure include:
The first transistor, source and drain terminal one terminate input signal, and the other end is as output end output by phase change
Signal；
π type low pass filtering access, for input signal to be realized phase change；
Second transistor and two resistance with shunt inductance and shunt capacitance；
The π type low pass filtering access is made of an inductance and two capacitors, is π type structure；
The capacitance of two capacitors described in the π type low pass filtering access is equal.By the inductance value and the institute that adjust the inductance
The capacitance of capacitor is stated, so that output signal realizes the phase shift needed；
The first transistor in the π type low pass filtering access inductance and capacitor it is in parallel.
Preferably, the resistance is high resistant, respectively with the first transistor and the second transistor gate series, is prevented
Stop signal is revealed from the first transistor and the second transistor from source level and drain through grid grade.
Preferably, the second transistor is in parallel with the shunt inductance and the shunt capacitance, one end ground connection.When described
When second transistor connects the low pressure that can be turned it off, the second transistor and the shunt capacitance, the shunt inductance resonance.
Circuit exports not shifted signal as bandpass filtering closed-circuit working, the output end of the first transistor.
Preferably, the reactance value of the shunt inductance and the shunt capacitance is adjustable, so that the bandpass filtering access exists
Required frequency upper resonance.
Preferably, the first transistor and the second transistor can not connect same voltage, connect high pressure or low pressure respectively,
Control whether the phase shifter realizes phase shift.
The present invention solves traditional high-pass/low-pass structure phase shifter when realizing small phase phase shift due to ideal component values
It is excessive or too small and the problem of cannot achieve, have the characteristics that circuit is small in size, it is high to shift to precision, insertion loss is small.
Detailed description of the invention
Fig. 1 is a kind of X-band phase shifter circuit schematic diagram of the present invention.
Fig. 2 is the paralleling MOS pipe switching circuit schematic diagram with resonant inductance and resonant capacitance.
Fig. 3 is paralleling MOS pipe switch equivalent circuit schematic diagram.
Fig. 4 is that M1 turns off schematic equivalent circuit of the M2 turning circuit under low pass phase-shift states.
Fig. 5 is that schematic equivalent circuit of the M2 breaking circuit under band logical phase-shift states is connected in M1.
Specific embodiment
Hereinafter reference will be made to the drawings, and the present invention will be described in more detail.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.In addition, may not show in figure
Certain well known parts out.
Many specific details of the invention, such as structure, material, size, the processing work of device is described hereinafter
Skill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not press
The present invention is realized according to these specific details.
Fig. 1 shows phase shifter circuit schematic diagram of the present invention.
As shown in Figure 1, phase shifter circuit includes: two switching tube M1, M2, two inductance LR、Ls, two capacitor CpAnd
Capacitor CR；Wherein, the drain terminal of M1 and source are respectively the input terminal and output end of signal, inductance LsWith two capacitor CpIt is connected in parallel on
On switching tube M1.Switching tube M2 and inductance LR, capacitor CR Parallel connection, M2 source level and drain electrode one end ground connection are another to terminate at two series connection
Capacitor CpBetween.Circuit can be divided into bandpass filtering access and low pass filtering access.Bandpass filtering access as signal path when
It waits, signal phase variation is approximately zero.When low pass filtering access is as signal path, signal can realize the variation of particular phases.
Fig. 2 shows the circuit diagrams with shunt inductance and the switching tube M2 of shunt capacitance.
As shown in Fig. 2, switching tube M2 and inductance LR, capacitor CRParallel connection, when M2 shutdown, the equivalent shutdown capacitor and electricity of M2
Feel LR, capacitor CRIt constitutes resonant tank and resonance occurs, parallel resistance is infinity, is equivalent to open circuit for signal.
Fig. 3 shows the equivalent circuit schematic of the switching tube M2 with shunt inductance and shunt capacitance.
As shown in figure 3, CeqWith ReqFor the equivalent capacity and equivalent resistance of switching tube M2 pipe.CeqIt can be by changing grid width
To change.CeqWith M2 switching tube grid width direct proportionality.When M2 shutdown, the equivalent shutdown capacitor and inductance Ls, capacitor of M2
Cp constitutes resonant tank and resonance, and resonant-frequency adjustable occurs.Capacitor CRPresence may make the feelings constant in resonance frequency
Under condition, C needed for circuiteqWith LRIt reduces, circuit area reduces, and also reduces since grid width reduces ghost effect.
When Fig. 4 shows M1 shutdown M2 conducting, the equivalent circuit diagram of circuit.
As shown in figure 4, signal passes through π type low pass filtering access when M1 shutdown M2 conducting.Due to the width of low-pass filter
Keeping pouring in delivery function, there are poles, so delayed phase.By changing inductance LsWith capacitor CpValue, thus it is possible to vary output signal phase
Phase shift to input signal.CjFor the junction capacity of metal-oxide-semiconductor, RsubIncluding resistance substrate and substrate contact resistance, Ron2For M2 conducting
When conducting resistance.Shunt inductance and shunt capacitance are by R at this timeon2Short circuit.
When Fig. 5 shows M1 conducting M2 shutdown, the equivalent circuit diagram of circuit.
As shown in figure 5, signal passes through bandpass filtering access when M1 conducting M2 shutdown.Inductance LRWith capacitor CRAnd M2 etc.
Imitate capacitor CeqResonance occurs, parallel impedance is infinity, therefore is not shown on circuit diagram.Inductance LSWith capacitor CP/ 2 are connected in parallel on
The conducting resistance R of M1on1On.Signal is from resistance R at this timeon1Pass through, phase shift will not be generated.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, term " including ", " including " or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence " including one ... ", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (5)
1. a kind of X-band phase shifter, for by input signal phase shift, which is characterized in that the phase shifter includes:
The first transistor, source and drain terminal one terminate input signal, and the other end is as output end output by phase change
Signal；
π type low pass filtering access, for input signal to be realized phase change；
Second transistor and two resistance with shunt inductance and shunt capacitance；
Wherein, the π type low pass filtering access is made of an inductance and two capacitors, is π type structure；The appearance of the capacitor
It is worth equal；By adjusting the inductance value of the inductance and the capacitance of the capacitor, so that output signal realizes specific phase shift；
The first transistor in the π type low pass filtering access inductance and capacitor it is in parallel.
2. X-band phase shifter according to claim 1, which is characterized in that the resistance is high resistant, respectively with described first
Transistor and the second transistor gate series, anti-stop signal from the first transistor and the second transistor source level and
Drain leakage.
3. X-band phase shifter according to claim 2, which is characterized in that the source and drain of the second transistor and it is described simultaneously
Join inductance and the shunt capacitance is in parallel, source and drain one end ground connection；When the second transistor connects the low pressure that can be turned it off, institute
Second transistor and the shunt capacitance, the shunt inductance resonance are stated, so that parallel impedance is infinity, circuit is band logical filter
Wave access, the unchanged signal of output end output phase of the first transistor.
4. X-band phase shifter according to claim 3, which is characterized in that the shunt inductance and the shunt capacitance
Reactance value is adjustable, so that the bandpass filtering access is in required frequency upper resonance.
5. X-band phase shifter according to claim 4, which is characterized in that the first transistor and second crystal
Pipe connects high pressure or low pressure respectively, controls whether the phase shifter realizes phase shift.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811616039.0A CN109617536A (en) | 2018-12-27 | 2018-12-27 | A kind of X-band phase shifter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811616039.0A CN109617536A (en) | 2018-12-27 | 2018-12-27 | A kind of X-band phase shifter |
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| CN109617536A true CN109617536A (en) | 2019-04-12 |
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| CN201811616039.0A Pending CN109617536A (en) | 2018-12-27 | 2018-12-27 | A kind of X-band phase shifter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113193851A (en) * | 2021-04-16 | 2021-07-30 | 天津大学 | Numerical control phase shifter for X wave band |
| CN114265038A (en) * | 2021-11-22 | 2022-04-01 | 电子科技大学 | High-precision switch type phase-shifting unit with temperature compensation effect |
Citations (8)
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|---|---|---|---|---|
| CN1230049A (en) * | 1997-12-26 | 1999-09-29 | 日本电气株式会社 | Semiconductor phase shifter having high-pass signal path and low-pass signal path connected in parallel |
| JP2008306359A (en) * | 2007-06-06 | 2008-12-18 | Mitsubishi Electric Corp | High-pass filter built-in switch, high-pass/low-pass filter switching phase shifter, tunable resonator, pass band variable bandpass filter, and stop band variable band rejection filter |
| US20100001805A1 (en) * | 2007-03-06 | 2010-01-07 | Takehito Ishii | High-frequency voltage-controlled oscillation circuit |
| CN103281047A (en) * | 2013-04-25 | 2013-09-04 | 重庆西南集成电路设计有限责任公司 | 180-degree broadband phase shifter on passive chip |
| CN105720942A (en) * | 2016-01-22 | 2016-06-29 | 西安电子科技大学 | Ultra-wide-band low-noise high-balance on-chip active Balun |
| CN106778413A (en) * | 2016-12-05 | 2017-05-31 | 中国科学技术大学 | A kind of integrated simulation self-interference cancellation circuit for being applied to ultrahigh frequency RFID |
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2018
- 2018-12-27 CN CN201811616039.0A patent/CN109617536A/en active Pending
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|---|---|---|---|---|
| CN1230049A (en) * | 1997-12-26 | 1999-09-29 | 日本电气株式会社 | Semiconductor phase shifter having high-pass signal path and low-pass signal path connected in parallel |
| US20100001805A1 (en) * | 2007-03-06 | 2010-01-07 | Takehito Ishii | High-frequency voltage-controlled oscillation circuit |
| JP2008306359A (en) * | 2007-06-06 | 2008-12-18 | Mitsubishi Electric Corp | High-pass filter built-in switch, high-pass/low-pass filter switching phase shifter, tunable resonator, pass band variable bandpass filter, and stop band variable band rejection filter |
| CN103281047A (en) * | 2013-04-25 | 2013-09-04 | 重庆西南集成电路设计有限责任公司 | 180-degree broadband phase shifter on passive chip |
| CN105720942A (en) * | 2016-01-22 | 2016-06-29 | 西安电子科技大学 | Ultra-wide-band low-noise high-balance on-chip active Balun |
| CN106778413A (en) * | 2016-12-05 | 2017-05-31 | 中国科学技术大学 | A kind of integrated simulation self-interference cancellation circuit for being applied to ultrahigh frequency RFID |
| CN107681992A (en) * | 2017-10-20 | 2018-02-09 | 绵阳鑫阳知识产权运营有限公司 | A kind of six bit digital phase shifters |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113193851A (en) * | 2021-04-16 | 2021-07-30 | 天津大学 | Numerical control phase shifter for X wave band |
| CN113193851B (en) * | 2021-04-16 | 2022-12-23 | 天津大学 | Numerical control phase shifter for X wave band |
| CN114265038A (en) * | 2021-11-22 | 2022-04-01 | 电子科技大学 | High-precision switch type phase-shifting unit with temperature compensation effect |
| CN114265038B (en) * | 2021-11-22 | 2024-02-09 | 电子科技大学 | High-precision switch type phase shifting unit with temperature compensation effect |
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Application publication date: 20190412 |