CN107707218A - The embedded five-digit number control attenuator of switch based on low-pass filter network - Google Patents
The embedded five-digit number control attenuator of switch based on low-pass filter network Download PDFInfo
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- CN107707218A CN107707218A CN201710840671.2A CN201710840671A CN107707218A CN 107707218 A CN107707218 A CN 107707218A CN 201710840671 A CN201710840671 A CN 201710840671A CN 107707218 A CN107707218 A CN 107707218A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H17/00—Networks using digital techniques
- H03H17/0054—Attenuators
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Abstract
The invention discloses the embedded five-digit number control attenuator of the switch based on low-pass filter network, the attenuator includes five attenuator circuit modules：0.5dB attenuator circuits module, 1dB attenuator circuits module, 2dB attenuator circuits module, 4dB attenuator circuits module, 8dB attenuator circuit modules；Five attenuator circuit modules are cascaded using preset order, 2dB attenuator circuits module, 4dB attenuator circuits module, 8dB attenuator circuits module use the embedded structure of switch based on low-pass filter network, solve the problems, such as that existing attenuator is difficult to keep relatively low spurious phase modulation and insertion loss while highly attenuating precision is kept, and size is larger and the problem of cost is higher.
Description
Technical field
The present invention relates to the attenuator in electronic communication field, in particular it relates in the switch based on low-pass filter network
Embedded five-digit number control attenuator.
Background technology
Along with the development of Modern wireless communication technology, low-power consumption and small form factor requirements of the people to electronic equipment are increasingly
Height, and integrated circuit has various features as a kind of microelectronic device, such as its small volume, light weight, multiple functional, reliable
Property is high, easy for installation, frequency characteristic is good, specificity is strong and the performance parameter of component is than more consistent, and symmetry is good.Therefore collect
More and more extensive application is obtained in every field into circuit.
As a kind of signal gain control circuit, numerical-control attenuator is widely used in phased array chip system.It is phased
Attenuator in battle array chip system, which generally requires, meets following basic demand：First, it is necessary to higher attenuation accuracy and larger
Regime during recession scope realizes signal amplitude control；Second, it is necessary to stable phase place change to realize the accurate tracking of target；The
Three, it is necessary to relatively low loss to reduce the pressure of signalling channel gain；4th, it is necessary to low power dissipation design to meet vast number T/
The application of R components.Yet with the restriction of design rule, often there is the pass mutually restricted between the indices of attenuator
System, therefore, a kind of highly attenuating precision of research and design, low spurious phase modulation and inexpensive attenuator circuit are necessary.
In configuration aspects, traditional attenuator implementation has：Switching pathway formula and distribution.Switching pathway decay knot
Structure has advantage when realizing big attenuation module, but due to the summation of its multiple switch loss so that global attenuation device
Insertion loss is excessive, and because the area of switch is larger, is unfavorable for realizing less chip area.Distribution attenuator has
Relatively low insertion loss and wider frequency bandwidth characteristicses.But the poor-performing in decay flatness and spurious phase modulation, additionally, due to
Quarter-wave transmission line size is larger, and the chip area of occupancy also can be larger.In terms of cost, ripe numerical control at present declines
Subtract device to realize using GaAs techniques more, though there is preferable performance, its chip yield is low, and processing is expensive, so
Cost using the numerical-control attenuator of GaAs technological designs is higher.
In summary, present inventor has found that current numerical control declines during the present application technical scheme is realized
Subtracting device, at least there are the following problems：Due to be present mutual restricting relation in each index of numerical-control attenuator, it is difficult to declined keeping height
Relatively low spurious phase modulation and insertion loss are kept while subtracting precision, in addition size present in current numerical-control attenuator compared with
Greatly, the problem of cost is higher.
The content of the invention
The invention provides the embedded five-digit number control attenuator of the switch based on low-pass filter network, solves existing decay
Device is difficult to keep the problem of relatively low spurious phase modulation and insertion loss while highly attenuating precision is kept, and size is larger
With cost it is higher the problem of.
To be declined in order to solve the above technical problems, this application provides the embedded five-digit number control of the switch based on low-pass filter network
Subtract device, the attenuator includes five attenuator circuit modules：0.5dB attenuator circuits module, 1dB attenuator circuits module, 2dB decay
Circuit module, 4dB attenuator circuits module, 8dB attenuator circuit modules；Five attenuator circuit modules carry out level using preset order
Connection, 2dB attenuator circuits module, 4dB attenuator circuits module, 8dB attenuator circuits module use opening based on low-pass filter network
Embedded structure inside the Pass.Attenuation range is 0-15.5dB, and decay stepping is 0.5dB, and attenuation state is 32.
Wherein, waterfall sequence is cascaded according to the return loss of every attenuator and the size of attenuation, in addition
Because each attenuation module circuit of the present invention can reach preferable by adjusting the parameter value of each component
Input and output return loss, so corresponding Match circuits need not be done, every attenuator circuit module is directly attached.
The embedded knot of the switch based on low-pass filter network for being mainly characterized by 2dB, 4dB, 8dB attenuator circuit of the present invention
Structure.The effect of low-pass filter network is that relatively low spurious phase modulation is kept while higher attenuation precision in order to be maintained at, in switch
The effect of embedded structure is to reduce the insertion loss of circuit and chip area.It is real yet with 0.5dB and 1dB attenuator circuits
Existing attenuation is smaller, so preferably reducing insertion loss and chip area using traditional T-shaped attenuation network.
Further, 0.5dB attenuator circuits module is using the embedded T-shaped attenuation network structure of switch, 1dB attenuator circuit moulds
Block is using the embedded T-shaped attenuation network structure of switch.
Further, five attenuator circuit modules are declined using 4dB attenuator circuits module, 2dB attenuator circuits module, 0.5dB
Subtract circuit module, 1dB attenuator circuits module, 8dB attenuator circuit sequence of modules to cascade successively.Five-digit number control of the present invention declines
Subtracting device needs successively to cascade up each attenuator circuit module, to reach the overall performance effect required for attenuator.It is and each
The principle of individual attenuator circuit module-cascade is just comprehensive with the carry out of attenuation size according to the return loss of every attenuator circuit
Close after considering, sequence cascade.The waterfall sequence of five-digit number control attenuator is followed successively by the present invention：4dB-2dB-0.5dB-1dB-
8dB.(waterfall sequence herein is only for reference, with specific reference to the return loss of every attenuator circuit module of designer's design
Depending on energy).
Further, 2dB attenuator circuits module uses the embedded Pi types attenuation network of switch based on RC low-pass filter networks
Network structure.
Further, 4dB attenuator circuits module uses the embedded Pi types attenuation network of switch based on RLC low-pass filter networks
Network structure, 8dB attenuator circuits module use the embedded Pi types attenuation network structure of switch based on RLC low-pass filter networks.
Further, 0.5dB attenuator circuits module includes：Resistance R1, resistance R2, resistance R3, resistance R4, FET
M1, FET M2；Wherein, resistance R1, R2, R3, R4 forms T-shaped attenuation network；Resistance R1 one end and 0.5dB attenuator circuit moulds
The input connection of block, resistance R1 are connected after being connected with resistance R2 with the output end of 0.5dB attenuator circuit modules, FET M1
Drain electrode be connected with the input of 0.5dB attenuator circuit modules, FET M1 source electrode is defeated with 0.5dB attenuator circuit modules
Go out end connection, resistance R3 one end is connected with the resistance R1 other ends, and the resistance R3 other ends are connected with FET M2 drain electrode, field effect
Should pipe M2 source electrode be connected with resistance R4 one end, resistance R4 other end ground connection.When control voltage acts on FET M1,
When inverted control voltage acts on FET M2, the conducting of M1 pipes, the shut-off of M2 pipes, now signal is not passed through T-shaped attenuation network, directly
Connect from input and flow to output end, attenuator circuit module is in reference state, anti-phase when control voltage acts on FET M2
When control voltage acts on FET M1, the conducting of M2 pipes, the shut-off of M1 pipes, now signal flows through T-shaped attenuation network, attenuator circuit
Module is in attenuation state.
Further, 1dB attenuator circuits module includes：Resistance R5, resistance R6, resistance R7, resistance R8, FET M3,
FET M4；Wherein, resistance R5, R6, R7, R8 forms T-shaped attenuation network；Resistance R5 one end and 1dB attenuator circuit modules
Input is connected, and resistance R5 is connected after being connected with resistance R6 with the output end of 1dB attenuator circuit modules, FET M3 drain electrode
It is connected with the input of 1dB attenuator circuit modules, FET M3 source electrode is connected with the output end of 1dB attenuator circuit modules,
Resistance R7 one end is connected with the resistance R5 other ends, and the resistance R7 other ends are connected with FET M4 drain electrode, FET M4's
Source electrode is connected with resistance R8 one end, resistance R8 other end ground connection.When control voltage acts on FET M3, anti-phase control
When voltage acts on FET M4, the conducting of M3 pipes, the shut-off of M4 pipes, now signal is not passed through T-shaped attenuation network, directly from input
End flow to output end, and attenuator circuit module is in reference state, when control voltage acts on FET M4, inverted control voltage
When acting on FET M3, the conducting of M4 pipes, the shut-off of M3 pipes, now signal flows through T-shaped attenuation network, and attenuator circuit module is in
Attenuation state.
Further, 2dB attenuator circuits module includes：Resistance R9, resistance R10, resistance R11；Electric capacity C1, electric capacity C2, field
Effect pipe M5, FET M6, FET M7；Wherein, resistance R9, R1, R11 forms Pi type attenuation networks；Electric capacity C1, C2 with
Resistance R9 forms RC low-pass filter networks to reduce spurious phase modulation；Resistance R9 one end, electric capacity C1 positive pole, FET M5
The input with 2dB attenuator circuit modules that drains is connected；FET M5 source electrode, the resistance R9 other end, electric capacity C2
Output end of the positive pole with 2dB attenuator circuit modules is connected；Electric capacity C1 negative pole is connected with FET M6 drain electrode, field-effect
Pipe M6 source electrode is connected with resistance R10 one end, resistance R10 other end ground connection；Electric capacity C2 negative pole is with FET M7's
Drain electrode connection, FET M7 source electrode are connected with resistance R11 one end, resistance R11 other end ground connection.When control voltage is made
For FET M5, when inverted control voltage acts on FET M6 and M7, the conducting of M5 pipes, M6, the shut-off of M7 pipes, now believe
Number attenuation network is not passed through, directly flow to output end from input, attenuator circuit module is in reference state, when control voltage is made
For FET M6, M7, when inverted control voltage acts on FET M5, the conducting of M6, M7 pipe, the shut-off of M5 pipes, now believe
Number attenuation network is flowed through, attenuator circuit module is in attenuation state.
Further, 4dB attenuator circuits module includes：Resistance R12, resistance R13, resistance R14, resistance R15, electric capacity C3,
Electric capacity C4, inductance L1, FET M8, FET M9, FET M10；Wherein, resistance R1, R13, R14, R15 forms Pi
Type attenuation network；Resistance R12, R13 and inductance L1 and electric capacity C3, C4 form RLC low-pass filter networks to ensure in big attenuation
When there is higher attenuation accuracy to be effectively reduced spurious phase modulation again；Resistance R12 one end, electric capacity C3 positive pole, field effect
Should pipe M8 input of the drain electrode with 4dB attenuator circuit modules be connected；FET M8 source electrode, resistance R13 one end, electricity
Hold output end of the C4 positive pole with 4dB attenuator circuit modules to be connected；The resistance R12 other end is connected with inductance L1 one end,
The inductance L1 other end is connected with the resistance R13 other end；Electric capacity C3 negative pole is connected with FET M9 drain electrode, field-effect
Pipe M9 source electrode is connected with resistance R14 one end, resistance R14 other end ground connection；Electric capacity C4 negative pole is with FET M10's
Drain electrode connection, FET M10 source electrode are connected with resistance R15 one end, resistance R15 other end ground connection.Work as control voltage
FET M8 is acted on, when inverted control voltage acts on FET M9 and M10, the conducting of M8 pipes, the shut-off of M9, M10 pipe, this
When signal be not passed through attenuation network, directly flow to output end from input, attenuator circuit module is in reference state, when control electricity
Pressure acts on FET M9, M10, when inverted control voltage acts on FET M8, the conducting of M9, M10 pipe, and the shut-off of M8 pipes,
Now signal flows through attenuation network, and attenuator circuit module is in attenuation state.
Further, 8dB attenuator circuits module includes：Resistance R16, resistance R17, resistance R18, resistance R19, electric capacity C5,
Electric capacity C6, inductance L2, FET M11, FET M12, FET M13；Wherein, resistance R16, R17 and inductance L2 and
Electric capacity C5, C6 form RLC low-pass filter networks to ensure to have higher attenuation accuracy again can be effectively in big attenuation
Reduce spurious phase modulation；Resistance R16 one end, FET M11 drain electrode, FET M12 drain electrode with 8dB attenuator circuits
The input connection of module；FET M11 source electrode, resistance R17 one end, FET M13 drain electrode and 8dB decay electricity
The output end connection of road module；The resistance R16 other end is connected with inductance L2 one end, inductance the L2 other end and resistance R17
The other end connection；The source electrode of resistance R18 one end, electric capacity C5 positive pole with FET M12 is connected, and resistance R18's is another
One end, electric capacity C5 negative pole are grounded；The source electrode of resistance R19 one end, electric capacity C6 positive pole with FET M13 is connected,
The resistance R19 other end, electric capacity C6 negative pole is grounded.When control voltage acts on FET M11, inverted control voltage is made
During for FET M12 and M13, M11 pipes conducting, M12, M13 pipe shut-off, now signal is not passed through attenuation network, directly from
Input flow to output end, and attenuator circuit module is in reference state, when control voltage acts on FET M12, M13, instead
When phase control voltage acts on FET M11, the conducting of M12, M13 pipe, the shut-off of M11 pipes, now signal flows through attenuation network, declines
Subtract circuit module and be in attenuation state.
Because each attenuation module circuit of the present invention can be reached by adjusting the parameter value of each component
To preferable input and output return loss, so corresponding Match circuits need not be done.
The embedded five-digit number control attenuator of a kind of switch based on low-pass filter network of the present invention, with prior art
Compare, have the following technical effect that：
1st, the insertion loss and chip area of attenuator are significantly reduced by using the embedded structure of switch；
2nd, by the way that RC low pass filters, RLC low pass filters are combined with Pi type attenuation networks so that attenuator is being kept
Relatively low spurious phase modulation is kept while highly attenuating precision；
3rd, each attenuator circuit module of five-digit number control attenuator of the present invention has good input and output echo
Loss, the design of the match circuit saved, so as to efficiently reduce chip area；
4th, cost during attenuator chip volume production is significantly reduced using SiGe BiCMOS techniques.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding the embodiment of the present invention, forms one of the application
Point, do not form the restriction to the embodiment of the present invention；
Fig. 1 is the structural representation of 0.5dB types attenuator circuit module provided by the invention；
Fig. 2 is the structural representation of 1dB types attenuator circuit module provided by the invention；
Fig. 3 is the structural representation of 2dB types attenuator circuit module provided by the invention；
Fig. 4 is the structural representation of 4dB types attenuator circuit module provided by the invention；
Fig. 5 is the structural representation of 8dB types attenuator circuit module provided by the invention；
Fig. 6 is the structural representation after attenuator entire cascaded provided by the invention.
Embodiment
The invention provides the embedded five-digit number control attenuator of the switch based on low-pass filter network, solves existing decay
Device is difficult to keep the problem of relatively low spurious phase modulation and insertion loss while highly attenuating precision is kept, and size is larger
With cost it is higher the problem of.
It is below in conjunction with the accompanying drawings and specific real in order to be more clearly understood that the above objects, features and advantages of the present invention
Mode is applied the present invention is further described in detail.It should be noted that in the case where not conflicting mutually, the application's
Feature in embodiment and embodiment can be mutually combined.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still, the present invention may be used also
To be implemented using other different from the other modes in the range of being described herein, therefore, protection scope of the present invention is not by under
The limitation of specific embodiment disclosed in face.
Fig. 1-Fig. 6 is refer to, this application provides the embedded five-digit number control attenuator of the switch based on low-pass filter network,
Including 0.5dB attenuator circuit modules, 1dB attenuator circuit modules, 2dB attenuator circuit modules, 4dB attenuator circuit modules, 8dB decay
Circuit module.
As a kind of embodiment, as shown in figure 1,0.5dB attenuator circuits module is using the embedded T-shaped attenuation network of switch
Network, its physical circuit include resistance R1, resistance R2, resistance R3, resistance R4, FET M1, FET M2.Wherein 0.5dB
The input of attenuator circuit module is connected with resistance R1 one end and FET M1 drain electrode；The resistance R1 other end with
Resistance R2 one end is connected；The output end of 0.5dB attenuator circuit modules and the resistance R2 other end and FET M1's
Source electrode is connected；Resistance R3 one end is connected with resistance R1, R2 junction；The resistance R3 other end is with FET M2's
Drain electrode is connected；FET M2 source electrode is connected with resistance R4 one end, resistance R4 other end ground connection.Resistance R1, R2,
R3, R4 form T-shaped attenuation network；When control voltage acts on FET M1, inverted control voltage acts on FET M2
When, the conducting of M1 pipes, the shut-off of M2 pipes, due to the conducting resistance very little of M1 pipes, equivalent to wire, thus now signal be not passed through it is T-shaped
Attenuation network, output end directly is flow to from input, attenuator circuit module is in reference state, and signal is substantially unattenuated；When
Control voltage acts on FET M2, when inverted control voltage acts on FET M1, the conducting of M2 pipes, and the shut-off of M1 pipes, M2
Pipe flows through T-shaped attenuation network equivalent to wire, now signal, and attenuator circuit module is in attenuation state.
Further, as a kind of embodiment, as shown in Fig. 2 1dB attenuator circuits module is the same as 0.5dB attenuator circuits
Module is similar, also using the embedded T-shaped attenuation network of switch.Its physical circuit includes resistance R5, resistance R6, resistance R7, resistance
R8, FET M3, FET M4.The wherein one end and field-effect of the input of 1dB attenuator circuits module with resistance R5
Pipe M3 drain electrode is connected；The resistance R5 other end is connected with resistance R6 one end；The output end of 1dB attenuator circuit modules with
The resistance R6 other end and FET M3 source electrode are connected；Resistance R7 one end is connected with resistance R5, R6 junction
Connect；The resistance R7 other end is connected with FET M4 drain electrode；FET M4 source electrode is connected with resistance R8 one end
Connect, resistance R8 other end ground connection.Resistance R5, R6, R7, R8 form T-shaped attenuation network；When control voltage acts on FET
M3, when inverted control voltage acts on FET M4, the conducting of M3 pipes, M4 pipes shut-off, due to the conducting resistance very little of M3 pipes, phase
When in wire, so now signal is not passed through T-shaped attenuation network, directly output end is flow to from input, at attenuator circuit module
It is substantially unattenuated in reference state, signal；When control voltage acts on FET M4, inverted control voltage acts on field effect
Should pipe M3 when, the conducting of M4 pipes, the shut-off of M3 pipes, M4 pipes flow through T-shaped attenuation network, attenuator circuit mould equivalent to wire, now signal
Block is in attenuation state.
Further, as a kind of embodiment, as shown in figure 3,2dB attenuator circuits module, which uses, is based on RC low pass filtereds
The embedded Pi types attenuation network of switch of wave network, its physical circuit include resistance R9, resistance R10, resistance R11；Electric capacity C1, electricity
Hold C2；FET M5, FET M6, FET M7.The wherein input of 2dB attenuator circuits module and resistance R9 mono-
End, the drain electrode of electric capacity C1 positive pole and FET M5 are connected；The output end of 2dB attenuator circuit modules is another with resistance R9's
One end, electric capacity C2 positive pole and FET M5 source electrode are connected；Electric capacity C1 negative pole connects with FET M6 drain electrode
Connect；Electric capacity C2 negative pole is connected with FET M7 drain electrode；FET M6 source electrode is connected with resistance R10 one end,
Resistance R10 other end ground connection；FET M7 source electrode is connected with resistance R11 one end, resistance R11 another termination
Ground.Resistance R9, R10, R11 form Pi type attenuation networks；Electric capacity C1, C2 form RC low-pass filter networks with resistance R9 and posted to reduce
Raw phase modulation；When control voltage acts on FET M5, and inverted control voltage acts on FET M6 and M7, M5 pipes are led
It is logical, M6, the shut-off of M7 pipes, due to the conducting resistance very little of M5 pipes, equivalent to wire, so now signal is not passed through attenuation network,
Output end directly is flow to from input, attenuator circuit module is in reference state, and signal is substantially unattenuated；When control voltage is made
For FET M6, M7, when inverted control voltage acts on FET M5, the conducting of M6, M7 pipe, the shut-off of M5 pipes, M6, M7 pipe
Equivalent to wire, now signal flows through attenuation network, and attenuator circuit module is in attenuation state.
Further, as a kind of embodiment, as shown in figure 4,4dB attenuator circuits module, which uses, is based on RLC low passes
The embedded Pi types attenuation network of switch of filter network, its physical circuit include resistance R12, resistance R13, resistance R14, resistance
R15；Electric capacity C3, electric capacity C4；Inductance L1；FET M8, FET M9, FET M10.Wherein 4dB attenuator circuits mould
The input of block and resistance R12 one end, the drain electrode of electric capacity C2 positive pole and FET M8 are connected；Resistance R12's is another
End is connected with inductance L1 one end；The inductance L1 other end is connected with resistance R13 one end；4dB attenuator circuit modules it is defeated
Go out end and the resistance R13 other end, electric capacity C4 positive pole and FET M8 source electrode are connected；Electric capacity C3 negative pole and field
Effect pipe M9 drain electrode connection；Electric capacity C4 negative pole is connected with FET M10 drain electrode；FET M9 source electrode and resistance
R14 one end is connected, resistance R14 other end ground connection；FET M10 source electrode is connected with resistance R15 one end, electricity
Hinder R15 other end ground connection.Wherein resistance R12, R13, R14, R15 forms Pi type attenuation networks；Resistance R12, R13 and inductance L1
And electric capacity C3, C4 form RLC low-pass filter networks to ensure to have higher attenuation accuracy again can be effective in big attenuation
Ground reduces spurious phase modulation；When control voltage acts on FET M8, inverted control voltage acts on FET M9 and M10
When, the conducting of M8 pipes, M9, M10 pipe shut-off, due to the conducting resistance very little of M8 pipes, equivalent to wire, so now signal is not passed through
Attenuation network, output end directly is flow to from input, attenuator circuit module is in reference state, when control voltage acts on field effect
Should pipe M9, M10, when inverted control voltage acts on FET M8, the conducting of M9, M10 pipe, the shut-off of M8 pipes, M9, M10 pipe is suitable
In wire, now signal flows through attenuation network, and attenuator circuit module is in attenuation state.
Further, as a kind of embodiment, as shown in figure 5,8dB attenuator circuits module, which uses, is based on RLC low passes
The embedded Pi types attenuation network of switch of filter network, its physical circuit include resistance R16, resistance R17, resistance R18, resistance
R19；Electric capacity C5, electric capacity C6；Inductance L2；FET M11, FET M12, FET M13.Wherein 8dB attenuator circuits
The input of module and resistance R16 one end, FET M12 drain electrode and FET M11 drain electrode are connected；Resistance
The R16 other end is connected with inductance L2 one end；The inductance L2 other end is connected with resistance R17 one end；8dB attenuator circuit moulds
The output end of block and the resistance R17 other end, FET M13 drain electrode and FET M11 source electrode are connected；Field effect
Should pipe M12 source electrode be connected with resistance R18 one end, resistance R18 other end ground connection；Electric capacity C5 is in parallel with resistance R18；
Effect pipe M13 source electrode is connected with resistance R19 one end, resistance R19 other end ground connection, and electric capacity C6 is in parallel with resistance R19.
Wherein resistance R16, R17, R18, R19 forms Pi type attenuation networks；Resistance R16, R17 and inductance L2 and electric capacity C5, C6 form RLC
Low-pass filter network ensures to have higher attenuation accuracy to be effectively reduced spurious phase modulation again in big attenuation；Work as control
Voltage processed acts on FET M11, when inverted control voltage acts on FET M12 and M13, the conducting of M11 pipes, M12,
M13 pipes turn off, due to the conducting resistance very little of M11 pipes, equivalent to wire, so now signal is not passed through attenuation network, directly
Output end is flow to from input, attenuator circuit module is in reference state, when control voltage acts on FET M12, M13,
When inverted control voltage acts on FET M11, the conducting of M12, M13 pipe, the shut-off of M11 pipes, M12, M13 pipe equivalent to wire,
Now signal flows through attenuation network, and attenuator circuit module is in attenuation state.
Further, as a kind of embodiment, as shown in fig. 6, five-digit number control attenuator of the present invention needs
Each attenuator circuit module is cascaded up successively, to reach the overall performance effect required for attenuator.And each decay electricity
The principle of road module-cascade be according to every attenuator circuit return loss height and attenuation size consider after,
Sequence cascade.The waterfall sequence of five-digit number control attenuator is followed successively by the present invention：4dB-2dB-0.5dB-1dB-8dB.(herein
Waterfall sequence is only for reference, depending on the return loss performance of every attenuator circuit module of designer's design).In addition
Because each attenuation module circuit of the present invention can reach preferable by adjusting the parameter value of each component
Input and output return loss, so corresponding Match circuits need not be done.
The on and off of attenuator circuit module is controlled by adjustment control voltage and inverted control voltage, so that five-digit number
Control attenuator can reach 25Individual attenuation state.
The embedded five-digit number control attenuator of a kind of switch based on low-pass filter network of the present invention, with prior art
Compare, have the following technical effect that：
1. the insertion loss and chip area of attenuator are significantly reduced by using the embedded structure of switch；
2. by the way that RC low pass filters, RLC low pass filters are combined with Pi type attenuation networks so that attenuator is being kept
Relatively low spurious phase modulation is kept while highly attenuating precision；
3. each attenuator circuit module of five-digit number control attenuator of the present invention has good input and output echo
Loss, the design of the match circuit saved, so as to efficiently reduce chip area；
4. cost during attenuator chip volume production is significantly reduced using SiGe BiCMOS techniques.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creation
Property concept, then can make other change and modification to these embodiments.So appended claims be intended to be construed to include it is excellent
Select embodiment and fall into having altered and changing for the scope of the invention.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (10)
1. the embedded five-digit number control attenuator of switch based on low-pass filter network, it is characterised in that the attenuator includes five
Position attenuator circuit module：0.5dB attenuator circuits module, 1dB attenuator circuits module, 2dB attenuator circuits module, 4dB attenuator circuits
Module, 8dB attenuator circuit modules；Five attenuator circuit modules are cascaded using preset order, wherein 2dB attenuator circuits mould
Block, 4dB attenuator circuits module, 8dB attenuator circuits module use the embedded structure of switch based on low-pass filter network.
2. the embedded five-digit number control attenuator of the switch according to claim 1 based on low-pass filter network, its feature exist
In for 0.5dB attenuator circuits module using embedded T-shaped attenuation network structure is switched, 1dB attenuator circuits module is embedded using switch
The T-shaped attenuation network structure of formula.
3. the embedded five-digit number control attenuator of the switch according to claim 1 based on low-pass filter network, its feature exist
In 2dB attenuator circuits module uses the embedded Pi types attenuation network structure of switch based on RC low-pass filter networks.
4. the embedded five-digit number control attenuator of the switch according to claim 1 based on low-pass filter network, its feature exist
In 4dB attenuator circuits module uses the embedded Pi types attenuation network structure of switch based on RLC low-pass filter networks, 8dB decay
Circuit module uses the embedded Pi types attenuation network structure of switch based on RLC low-pass filter networks.
5. the embedded five-digit number control attenuator of the switch according to claim 1 based on low-pass filter network, its feature exist
In five attenuator circuit modules are using 4dB attenuator circuits module, 2dB attenuator circuits module, 0.5dB attenuator circuits module, 1dB
Attenuator circuit module, 8dB attenuator circuit sequence of modules cascade successively.
6. the embedded five-digit number control attenuator of the switch according to claim 1 based on low-pass filter network, its feature exist
In 0.5dB attenuator circuit modules include：Resistance R1, resistance R2, resistance R3, resistance R4, FET M1, FET M2；Its
In, resistance R1 one end is connected with the input of 0.5dB attenuator circuit modules, and resistance R1 decays after being connected with resistance R2 with 0.5dB
The output end connection of circuit module, FET M1 drain electrode are connected with the input of 0.5dB attenuator circuit modules, FET
M1 source electrode is connected with the output end of 0.5dB attenuator circuit modules, and resistance R3 one end is connected with the resistance R1 other end, resistance R3
The other end be connected with FET M2 drain electrode, FET M2 source electrode is connected with resistance R4 one end, and resistance R4's is another
One end is grounded.
7. the embedded five-digit number control attenuator of the switch according to claim 1 based on low-pass filter network, its feature exist
In 1dB attenuator circuit modules include：Resistance R5, resistance R6, resistance R7, resistance R8, FET M3, FET M4；Its
In, resistance R5 one end is connected with the input of 1dB attenuator circuit modules, resistance R5 connected with resistance R6 after with 1dB attenuator circuits
The output end connection of module, FET M3 drain electrode are connected with the input of 1 attenuator circuit module, FET M3 source electrode
It is connected with the output end of 1 attenuator circuit module, resistance R7 one end is connected with the resistance R5 other end, the resistance R7 other end and field
Effect pipe M4 drain electrode connection, FET M4 source electrode are connected with resistance R8 one end, resistance R8 other end ground connection.
8. the embedded five-digit number control attenuator of the switch according to claim 1 based on low-pass filter network, its feature exist
In 2dB attenuator circuit modules include：Resistance R9, resistance R10, resistance R11；Electric capacity C1, electric capacity C2, FET M5, field-effect
Pipe M6, FET M7；Wherein, the drain electrode of resistance R9 one end, electric capacity C1 positive pole, FET M5 decays electric with 2dB
The input connection of road module；FET M5 source electrode, the resistance R9 other end, electric capacity C2 positive pole are decayed electric with 2dB
The output end connection of road module；Electric capacity C1 negative pole is connected with FET M6 drain electrode, FET M6 source electrode and resistance
R10 one end connection, resistance R10 other end ground connection；Electric capacity C2 negative pole is connected with FET M7 drain electrode, FET
M7 source electrode is connected with resistance R11 one end, resistance R11 other end ground connection.
9. the embedded five-digit number control attenuator of the switch according to claim 1 based on low-pass filter network, its feature exist
In 4dB attenuator circuit modules include：Resistance R12, resistance R13, resistance R14, resistance R15, electric capacity C3, electric capacity C4, inductance L1,
FET M8, FET M9, FET M10；Wherein, resistance R12 one end, electric capacity C3 positive pole, FET M8
Input of the drain electrode with 4dB attenuator circuit modules be connected；FET M8 source electrode, resistance R13 one end, electric capacity C4
Output end of the positive pole with 4dB attenuator circuit modules is connected；The resistance R12 other end is connected with inductance L1 one end, inductance L1
The other end be connected with the resistance R13 other end；Electric capacity C3 negative pole is connected with FET M9 drain electrode, FET M9's
Source electrode is connected with resistance R14 one end, resistance R14 other end ground connection；Electric capacity C4 negative pole connects with FET M10 drain electrode
Connect, FET M10 source electrode is connected with resistance R15 one end, resistance R15 other end ground connection.
10. the embedded five-digit number control attenuator of the switch according to claim 1 based on low-pass filter network, its feature exist
In 8dB attenuator circuit modules include：Resistance R16, resistance R17, resistance R18, resistance R19, electric capacity C5, electric capacity C6, inductance L2,
FET M1, FET M12, FET M13；Wherein, resistance R16 one end, FET M11 drain electrode, field effect
Should pipe M12 input of the drain electrode with 8dB attenuator circuit modules be connected；FET M11 source electrode, resistance R17 one end,
FET M13 drain electrode is connected with the output end of 8dB attenuator circuit modules；The resistance R16 other end and inductance L2 one end
Connection, the inductance L2 other end are connected with the resistance R17 other end；Resistance R18 one end, electric capacity C5 positive pole are and field-effect
Pipe M12 source electrode connection, resistance the R18 other end, electric capacity C5 negative pole are grounded；Resistance R19 one end, electric capacity C6 positive pole
Source electrode with FET M13 is connected, and resistance the R19 other end, electric capacity C6 negative pole are grounded.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710840671.2A CN107707218A (en) | 2017-09-18 | 2017-09-18 | The embedded five-digit number control attenuator of switch based on low-pass filter network |
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|---|---|---|---|
| CN201710840671.2A CN107707218A (en) | 2017-09-18 | 2017-09-18 | The embedded five-digit number control attenuator of switch based on low-pass filter network |
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ID=61172868
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108599735A (en) * | 2018-04-27 | 2018-09-28 | 成都聚利中宇科技有限公司 | A kind of low phase error attenuator |
| CN109714020A (en) * | 2019-02-22 | 2019-05-03 | 南京国博电子有限公司 | For controlling the circuit of numerical-control attenuator overshoot |
| CN110011641A (en) * | 2018-09-05 | 2019-07-12 | 浙江铖昌科技有限公司 | Numerical-control attenuator based on capacitance compensation |
| CN110535445A (en) * | 2018-05-25 | 2019-12-03 | 三星电机株式会社 | Variable gain low-noise multiplying arrangement and amplification method with phase compensation |
| CN112653422A (en) * | 2020-11-30 | 2021-04-13 | 北京无线电测量研究所 | Numerical control attenuator chip |
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| CN108599735A (en) * | 2018-04-27 | 2018-09-28 | 成都聚利中宇科技有限公司 | A kind of low phase error attenuator |
| CN110535445A (en) * | 2018-05-25 | 2019-12-03 | 三星电机株式会社 | Variable gain low-noise multiplying arrangement and amplification method with phase compensation |
| CN110535445B (en) * | 2018-05-25 | 2023-10-03 | 三星电机株式会社 | Variable gain low noise amplification apparatus with phase distortion compensation and amplification method |
| CN110011641A (en) * | 2018-09-05 | 2019-07-12 | 浙江铖昌科技有限公司 | Numerical-control attenuator based on capacitance compensation |
| CN109714020A (en) * | 2019-02-22 | 2019-05-03 | 南京国博电子有限公司 | For controlling the circuit of numerical-control attenuator overshoot |
| CN109714020B (en) * | 2019-02-22 | 2024-04-05 | 南京国博电子股份有限公司 | Circuit for controlling signal overshoot of numerical control attenuator |
| CN112688665A (en) * | 2020-11-27 | 2021-04-20 | 中国电子科技集团公司第十三研究所 | Broadband digital attenuator based on GaN HEMT device |
| CN112688665B (en) * | 2020-11-27 | 2022-11-29 | 中国电子科技集团公司第十三研究所 | Broadband digital attenuator based on GaN HEMT device |
| CN112653422B (en) * | 2020-11-30 | 2022-11-25 | 北京无线电测量研究所 | Numerical control attenuator chip |
| CN112653422A (en) * | 2020-11-30 | 2021-04-13 | 北京无线电测量研究所 | Numerical control attenuator chip |
| CN112653423A (en) * | 2020-12-16 | 2021-04-13 | 电子科技大学 | Novel low phase shift numerical control attenuator |
| CN114172478A (en) * | 2021-12-20 | 2022-03-11 | 上海迦美信芯通讯技术有限公司 | Low-noise amplifier wide-range high-precision gain control circuit |
| EP4344060A1 (en) * | 2022-09-21 | 2024-03-27 | Nxp B.V. | Digital, inductive step attenuator with capacitive phase-gain compensation and incorporation into quarter-wave tx / rx switch |
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