CN108599735A - A kind of low phase error attenuator - Google Patents
A kind of low phase error attenuator Download PDFInfo
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- CN108599735A CN108599735A CN201810389483.7A CN201810389483A CN108599735A CN 108599735 A CN108599735 A CN 108599735A CN 201810389483 A CN201810389483 A CN 201810389483A CN 108599735 A CN108599735 A CN 108599735A
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- attenuation
- attenuator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H17/00—Networks using digital techniques
- H03H17/0054—Attenuators
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Abstract
The present invention discloses a kind of low phase error attenuator, the attenuation module of multiple independent controls is in series between the input terminal and output end of the attenuator, each attenuation module is both provided with low pass phase shift compensation network, the low pass phase shift compensation network has low-pass characteristic in attenuation state for attenuation module where making, and deep trap isolation is both provided between each adjacent two attenuation module.The present invention makes each attenuation module in attenuation state with the low-pass characteristic as reference state by the way that low pass phase shift compensation network is added in each attenuation module, poor so as to the parasitic phase that effectively reduces each attenuation module.
Description
Technical field
The present invention relates to attenuator fields, and in particular to a kind of low phase error attenuator.
Background technology
In phased array radar system, generally require to do weighting processing to unlike signal amplitude, this just needs variable gain
Amplifier or digital pad are realized, wherein digital pad due to its control convenience, in practical applications more
Extensively.
In initial numerical control attenuation system, be per level-one attenuator switched by two single-pole double-throw switch (SPDT)s it is straight-through or
Resistance decrement network is realized, when leading directly to, undamped amount when being switched to resistor network, realizes corresponding attenuation, it is multistage this
The attenuator stage of sample is linked togather, and forms whole multi-bit control attenuator, still, this structure is due to the use of more
Single-pole double-throw switch (SPDT) be connected in signal path, can have bigger loss of signal, the linearity is not high, in addition, in chip
When upper realization, bigger chip area can be also occupied.
Based on this, prior art is led directly to by using each attenuation module of transistor switch realization or resistance decrement
The switching of network, this mode so that attenuator structure is fairly simple, and chip occupying area is smaller, however, this common
There are certain technical disadvantages for scheme：At reference state (pass-through state), whole access is equivalent to a low-pass network, there is phase
Position delay；At attenuation state (resistor network state), whole access is equivalent to a high pass network, has phase advanced.Above
The out of phase property of two states causes larger parasitic phase poor, and whole access phase can be brought in practical phased array system
The deviation of position.
Invention content
In view of this, the application provides a kind of low phase error attenuator, it is low by being added in each attenuation module
Logical phase shift compensation network makes each attenuation module in attenuation state with the low-pass characteristic as reference state, thus
The parasitic phase that each attenuation module can effectively be reduced is poor.The invention is realized by the following technical scheme：
A kind of low phase error attenuator, multiple independent controls are in series between the input terminal and output end of the attenuator
Attenuation module, each attenuation module is both provided with low pass phase shift compensation network, and the low pass phase shift compensation network is used for
Attenuation module where making has low-pass characteristic in attenuation state, and deep trap is both provided between each adjacent two attenuation module
Isolation.
Further, the quantity of the attenuation module is six, and 2dB decaying is followed successively by from the input terminal of the attenuator
Module, 1dB attenuation modules, 16dB attenuation modules, 0.5dB attenuation modules, 4dB attenuation modules and 8dB attenuation modules, the 2dB
Input terminal of the input terminal of attenuation module as the attenuator, the output end of the 8dB attenuation modules is as the attenuator
Output end.
Further, the 16dB attenuation modules and 8dB attenuation modules are π type attenuators.
Further, the circuit of the π types attenuator includes：
First low pass phase shift compensation network：Including first resistor, the first inductance and the second resistance being sequentially connected in series, the first electricity
Input terminal of the other end of resistance the first inductance of opposite connection as the first low pass phase shift compensation network, the opposite connection of second resistance the
The other end of one inductance is the output end of the first low pass phase shift compensation network；
First metal-oxide-semiconductor：Source electrode and drain electrode is connect with the input terminal of the first low pass phase shift compensation network and output end respectively, grid
Pole is connect by 3rd resistor with the first control power supply；
Second metal-oxide-semiconductor：Source electrode is grounded, and drain electrode is connected by the input terminal of the 4th resistance and the first low pass phase shift compensation network
It connects, grid is connect by the 5th resistance with the second control power supply；
Third metal-oxide-semiconductor：Source electrode is grounded, and drain electrode is connected by the output end of the 7th resistance and the first low pass phase shift compensation network
It connects, grid is connect by the 6th resistance with the second control power supply；
The input terminal and output end of the first low pass phase shift compensation network are also respectively as the π types attenuator circuit
Input terminal and output end, the first control power supply and the second control power supply are that complementary digital signals control power supply.
Further, the 2dB attenuation modules, 1dB attenuation modules, 0.5dB attenuation modules and 4dB attenuation modules are T
Type attenuator.
Further, the circuit of the T-type attenuator includes：
Second low pass phase shift compensation network：Including the 8th resistance, third inductance and the 9th resistance being sequentially connected in series, the 8th electricity
Resistance is connect by the second inductance with the input terminal of the T-type attenuator circuit, and the 9th resistance is declined by the 4th inductance with the T-type
Subtract the output end connection of device circuit；
4th metal-oxide-semiconductor：The other end connection of source electrode connection third inductance opposite with the 8th resistance, drain electrode and the 9th resistance phase
To connecting the other end connection of third inductance, grid controls power supply with third by the tenth resistance and connect；
5th metal-oxide-semiconductor：Source electrode is grounded, and drain electrode is another by eleventh resistor the second inductance of connection opposite with the 8th resistance
End connection, grid are connect by twelfth resistor with the 4th control power supply；
The third control power supply and the 4th control power supply are that complementary digital signals control power supply.
Further, the 2dB attenuation modules, 1dB attenuation modules, 16dB attenuation modules, 0.5dB attenuation modules, 4dB decline
It is Ku rotary attenuators to subtract module and 8dB attenuation modules.
Further, the 2dB attenuation modules, 1dB attenuation modules, 16dB attenuation modules, 0.5dB attenuation modules, 4dB decline
The working frequency for subtracting module and 8dB attenuation modules is 12GHz -20GHz.
The present invention makes each attenuation module decline by the way that low pass phase shift compensation network is added in each attenuation module
With the low-pass characteristic as reference state when subtracting state, so as to effectively reduce the parasitic phase of each attenuation module
Difference, secondly, the present invention are both provided with deep trap isolation between the adjacent attenuation module of each two, can effectively reduce each decay mode
Influencing each other between block, parasitic phase is poor to reducing, in addition, six differential declines of the present invention by using particular order
The attenuation module of amount can improve the linearity of attenuator, to reduce the RMS amplitudes and phase error of attenuator entirety, also
Attenuator can be optimized outputs and inputs standing-wave ratio.
Description of the drawings
Fig. 1 is the structural diagram of the present invention.
Fig. 2 is the electrical block diagram of π type attenuators.
Fig. 3 is the electrical block diagram of T-type attenuator.
Reference numeral：The first metal-oxide-semiconductors of T1-, the second metal-oxide-semiconductors of T2-, T3-third metal-oxide-semiconductor, the 4th metal-oxide-semiconductors of T4-, T5-
5th metal-oxide-semiconductor, the first inductance of L1-, the second inductance of L2-, L3-third inductance, the 4th inductance of L4-, R1-first resistor,
The 4th resistance of R2-second resistance, R3-3rd resistor, R4-, the 5th resistance of R5-, the 6th resistance of R6-, the 7th electricity of R7-
Resistance, the 8th resistance of R8-, the 9th resistance of R9-, the tenth resistance of R10-, R11-eleventh resistor, R12-twelfth resistor.
Specific implementation mode
It is below in conjunction with the accompanying drawings and specific real in order to make those skilled in the art more fully understand technical scheme of the present invention
Applying example, the present invention is described in further detail.
Embodiment
As shown in Figure 1, the present embodiment provides a kind of low phase error attenuators, between the input terminal and output end of attenuator
It is in series with the attenuation module of multiple independent controls, each attenuation module is both provided with low pass phase shift compensation network, in the present embodiment,
Low pass phase shift compensation network has low-pass characteristic in attenuation state for attenuation module where making, in addition, each in order to reduce
Influencing each other between attenuation module is both provided with deep trap isolation between each adjacent two attenuation module.
With further decreasing for integrated circuit feature size, the circuit unit on one single chip is more and more, Hen Duo electricity
The crosstalk that can exist to a certain extent is communicated due to substrate between road, causes to influence each other between different circuits.Especially exist
Than in more sensitive RF circuits, the interference between circuit can influence whole electrical property.
Solution interfere between each other a relatively effective mode be exactly using deep trap be isolated (DNW, DeepNwell) come every
From than more sensitive circuit module.Deep trap isolation is generally used in deep submicron process, and crucial use is exactly to be carried for device
For independent substrate, its object is to DNW come isolated p-well and substrate P so that Substrate Coupling Noise becomes smaller, and makes Sensitive Apparatus
N-type device between circuit is mutually isolated to come, and reduces reciprocal influence.
Attenuator is composed in series by multistage attenuation units in the present embodiment, and each attenuation units are by several NMOS devices
Switching is realized to control.In cascade, attenuator not at the same level, which exists, to influence each other, and can cause parasitic phase under differential declines state
The variation of position.In order to reduce it is not at the same level between cascade caused by mutually parasitic phase influence, by every grade of attenuator in the design
Main circuit layout part individually kept apart using deep trap technique, the effect of phase of influencing each other between reducing grade can be played
Fruit.Meanwhile deep trap (DNW) at different levels is connected to high level and plays the role of preventing latch-up (Latchup).
Specifically, the quantity of the attenuation module in the present embodiment is six, in order to improve the linearity of attenuator entirety, this
The series sequence of six attenuation modules of embodiment is followed successively by 2dB attenuation modules, 1dB decaying from the input terminal of the attenuator
Module, 16dB attenuation modules, 0.5dB attenuation modules, 4dB attenuation modules and 8dB attenuation modules, the 2dB attenuation modules it is defeated
Enter input terminal of the end as the attenuator, the output end of the output ends of the 8dB attenuation modules as the attenuator, in this way
The linearity of attenuator entirety can not only be improved by being arranged, and can also reduce the RMS amplitudes and phase error of attenuator entirety, from
And optimize attenuator outputs and inputs standing-wave ratio.
Preferably, the 16dB attenuation modules and 8dB attenuation modules are π type attenuators, as shown in Fig. 2, the π types decline
Subtracting device circuit includes：
First low pass phase shift compensation network：Including the first resistor R1, the first inductance L1 and second resistance R2 being sequentially connected in series,
Input terminal of the other end of the first inductance L1 of the opposite connections of first resistor R1 as the first low pass phase shift compensation network, second resistance
The other end of the first inductance L1 of the opposite connections of R2 is the output end of the first low pass phase shift compensation network；
First metal-oxide-semiconductor T1：Source electrode and drain electrode is connect with the input terminal of the first low pass phase shift compensation network and output end respectively,
Grid is connect by 3rd resistor R3 with the first control power supply；
Second metal-oxide-semiconductor T2：Source electrode is grounded, the input terminal that drain electrode passes through the 4th resistance R4 and the first low pass phase shift compensation network
Connection, grid are connect by the 5th resistance R5 with the second control power supply；
Third metal-oxide-semiconductor T3：Source electrode is grounded, the output end that drain electrode passes through the 7th resistance R7 and the first low pass phase shift compensation network
Connection, grid are connect by the 6th resistance R6 with the second control power supply；
The input terminal and output end of the first low pass phase shift compensation network are also respectively as the π types attenuator circuit
Input terminal and output end, the first control power supply and the second control power supply are that complementary digital signals control power supply.
Preferably, the 2dB attenuation modules, 1dB attenuation modules, 0.5dB attenuation modules and 4dB attenuation modules are T-type
Attenuator, as shown in figure 3, the T-type attenuator includes：
Second low pass phase shift compensation network：Including the 8th resistance R8, third inductance L3 and the 9th resistance R9 being sequentially connected in series,
8th resistance R8 is connect by the second inductance L2 with the input terminal of the T-type attenuator circuit, and the 9th resistance R9 passes through the 4th electricity
Sense L4 is connect with the output end of the T-type attenuator circuit；
4th metal-oxide-semiconductor T4：The other end connection of source electrode connection third inductance L3 opposite with the 8th resistance R8, drain electrode and the 9th
The other end connection of the opposite connection third inductance L3 of resistance R9, grid control power supply with third by the tenth resistance R10 and connect；
5th metal-oxide-semiconductor T5：Source electrode is grounded, and drain electrode passes through eleventh resistor R11 the second electricity of connection opposite with the 8th resistance R8
Feel the other end connection of L2, grid is connect by twelfth resistor R12 with the 4th control power supply；
The third control power supply and the 4th control power supply are that complementary digital signals control power supply.
What needs to be explained here is that each equal independent control of attenuation module, the first control power supply and the second control electricity
The quantity in source is two, is connect respectively with 16dB attenuation modules and 8dB attenuation modules, at the same with 16dB attenuation modules or 8dB
First control power supply of attenuation module connection and the second control power supply can obtain complementary power control signal by phase inverter,
It is corresponding to decay with 16dB i.e. when the first control power supply being connect with 16dB attenuation modules or 8dB attenuation modules is high level
Module or the second control power supply of 8dB attenuation modules connection are low level, conversely, working as and 16dB attenuation modules or 8dB decay modes
When first control power supply of block connection is low level, corresponding the second control being connect with 16dB attenuation modules or 8dB attenuation modules
Power supply processed is high level；The quantity of third control power supply and the 4th control power supply is four, respectively with 2dB decay modes
Block, 1dB attenuation modules, 0.5dB attenuation modules are connected with 4dB attenuation modules, at the same with 2dB attenuation modules, 1dB attenuation modules,
The third control power supply and the 4th control power supply of 0.5dB attenuation modules or the connection of 4dB attenuation modules can also be obtained by phase inverter
To complementary power control signal, i.e., when with 2dB attenuation modules, 1dB attenuation modules, 0.5dB attenuation modules or 4dB attenuation modules
When the third control power supply of connection is high level, it is corresponding with 2dB attenuation modules, 1dB attenuation modules, 0.5dB attenuation modules or
4th control power supply of 4dB attenuation modules connection is low level, conversely, working as and 2dB attenuation modules, 1dB attenuation modules, 0.5dB
It is corresponding to decay with 2dB attenuation modules, 1dB when attenuation module or the third control power supply of 4dB attenuation modules connection are low level
Module, 0.5dB attenuation modules or the 4th control power supply of 4dB attenuation modules connection are high level.In addition, either π types decay
Device or T-type attenuator, except through series inductance, can also be made up of in low pass phase shift compensation network shunt capacitance
Low pass phase shift compensation network.
Specifically, the 2dB attenuation modules, 1dB attenuation modules, 16dB attenuation modules, 0.5dB attenuation modules, 4dB decaying
Module and 8dB attenuation modules are Ku rotary attenuators, and working frequency is 12GHz -20GHz.
When the present embodiment is embodied, attenuator provided in this embodiment is with the stepping length of 0.5dB 0~31.5dB's
In attenuation range, the signal amplitude decaying of 64 kinds of states in total is realized.
It the above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair
The limitation of the present invention, protection scope of the present invention should be subject to claim limited range.For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, several improvements and modifications can also be made, these change
Protection scope of the present invention is also should be regarded as into retouching.
Claims (8)
1. a kind of low phase error attenuator, which is characterized in that be in series between the input terminal and output end of the attenuator more
The attenuation module of a independent control, each attenuation module are both provided with low pass phase shift compensation network, and the low pass phase shift is mended
Repay network has low-pass characteristic in attenuation state for attenuation module where making, between each adjacent two attenuation module
It is provided with deep trap isolation.
2. a kind of low phase error attenuator according to claim 1, which is characterized in that the quantity of the attenuation module is
Six, it is followed successively by 2dB attenuation modules, 1dB attenuation modules, 16dB attenuation modules, 0.5dB from the input terminal of the attenuator and declines
Subtract module, 4dB attenuation modules and 8dB attenuation modules, the input of the input terminals of the 2dB attenuation modules as the attenuator
End, the output end of the output ends of the 8dB attenuation modules as the attenuator.
3. a kind of low phase error attenuator according to claim 2, which is characterized in that the 16dB attenuation modules and
8dB attenuation modules are π type attenuators.
4. a kind of low phase error attenuator according to claim 3, which is characterized in that the circuit of the π types attenuator
Including：
First low pass phase shift compensation network：Including first resistor (R1), the first inductance (L1) and the second resistance being sequentially connected in series
(R2), input of the other end of first resistor (R1) the first inductance of opposite connection (L1) as the first low pass phase shift compensation network
End, the other end of second resistance (R2) the first inductance of opposite connection (L1) are the output end of the first low pass phase shift compensation network；
First metal-oxide-semiconductor (T1)：Source electrode and drain electrode is connect with the input terminal of the first low pass phase shift compensation network and output end respectively, grid
Pole is connect by 3rd resistor (R3) with the first control power supply；
Second metal-oxide-semiconductor (T2)：Source electrode is grounded, the input terminal that drain electrode passes through the 4th resistance (R4) and the first low pass phase shift compensation network
Connection, grid are connect by the 5th resistance (R5) with the second control power supply；
Third metal-oxide-semiconductor (T3)：Source electrode is grounded, the output end that drain electrode passes through the 7th resistance (R7) and the first low pass phase shift compensation network
Connection, grid are connect by the 6th resistance (R6) with the second control power supply；
Input of the input terminal and output end of the first low pass phase shift compensation network also respectively as the π types attenuator circuit
End and output end, the first control power supply and the second control power supply are that complementary digital signals control power supply.
5. a kind of low phase error attenuator according to claim 2, which is characterized in that the 2dB attenuation modules, 1dB
Attenuation module, 0.5dB attenuation modules and 4dB attenuation modules are T-type attenuator.
6. a kind of low phase error attenuator according to claim 5, which is characterized in that the circuit of the T-type attenuator
Including：
Second low pass phase shift compensation network：Including the 8th resistance (R8), third inductance (L3) and the 9th resistance being sequentially connected in series
(R9), the 8th resistance (R8) is connect by the second inductance (L2) with the input terminal of the T-type attenuator circuit, the 9th resistance (R9)
It is connect with the output end of the T-type attenuator circuit by the 4th inductance (L4)；
4th metal-oxide-semiconductor (T4)：The opposite other end for connect third inductance (L3) of source electrode and the 8th resistance (R8) connects, drain electrode and the
The other end connection of the opposite connection third inductance (L3) of nine resistance (R9), grid control electricity by the tenth resistance (R10) and third
Source connects；
5th metal-oxide-semiconductor (T5)：Source electrode is grounded, and drain electrode connect second by the way that eleventh resistor (R11) is opposite with the 8th resistance (R8)
The other end of inductance (L2) connects, and grid is connect by twelfth resistor (R12) with the 4th control power supply；
The third control power supply and the 4th control power supply are that complementary digital signals control power supply.
7. a kind of low phase error attenuator according to claim 1-6 any one, which is characterized in that the 2dB declines
It is Ku to subtract module, 1dB attenuation modules, 16dB attenuation modules, 0.5dB attenuation modules, 4dB attenuation modules and 8dB attenuation modules
Rotary attenuator.
8. a kind of low phase error attenuator according to claim 7, which is characterized in that the 2dB attenuation modules, 1dB
Attenuation module, 16dB attenuation modules, 0.5dB attenuation modules, the working frequency of 4dB attenuation modules and 8dB attenuation modules are
12GHz—20GHz。
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| CN201810389483.7A CN108599735A (en) | 2018-04-27 | 2018-04-27 | A kind of low phase error attenuator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810389483.7A CN108599735A (en) | 2018-04-27 | 2018-04-27 | A kind of low phase error attenuator |
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| CN108599735A true CN108599735A (en) | 2018-09-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110324023A (en) * | 2019-06-13 | 2019-10-11 | 浙江大学 | A kind of low phase error digital pad of ultra wide band based on parallel capacitive compensation |
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| CN102055427A (en) * | 2010-11-24 | 2011-05-11 | 南京理工大学 | Microwave millimeter wave ultra-wide band low phase shift six-figure attenuator |
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Effective date of registration: 20220215 Address after: 1 / F, 144 Tianshun Road, hi tech Zone, Chengdu, Sichuan 610000 Applicant after: CHENGDU ZHONGYU MICROCHIP TECHNOLOGY CO.,LTD. Address before: Building 23, Science Park, University of Electronic Science and technology, No.1 Gongxing Avenue, Gongxing Town, Shuangliu District, Chengdu, Sichuan 610213 Applicant before: CHENGDU JULI ZHONGYU TECHNOLOGY CO.,LTD. |
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Application publication date: 20180928 |