CN112491441A - Radio frequency front-end circuit - Google Patents
Radio frequency front-end circuit Download PDFInfo
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- CN112491441A CN112491441A CN202011197075.5A CN202011197075A CN112491441A CN 112491441 A CN112491441 A CN 112491441A CN 202011197075 A CN202011197075 A CN 202011197075A CN 112491441 A CN112491441 A CN 112491441A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
Abstract
The invention discloses a radio frequency front end circuit, comprising: an antenna, a transmitting unit, a receiving unit and a switch unit; the transmitting unit is used for transmitting radio frequency output signals and comprises a plurality of power amplifiers which are sequentially connected in series; the receiving unit is used for receiving a radio frequency input signal and comprises a plurality of low noise amplifiers which are sequentially connected in series; the switch unit is connected among the transmitting unit, the receiving unit and the antenna and used for conducting the transmitting unit and the antenna to realize electrical connection, or conducting the receiving unit and the antenna to realize electrical connection, and the switch unit comprises a multi-coupling coil circuit and a transistor control circuit; the multi-coupling coil circuit is used for realizing port isolation, and a load switching technology is used for adjusting the load. The radio frequency front-end circuit provided by the invention can realize the switching of two working states and can achieve low insertion loss and high isolation.
Description
Technical Field
The invention belongs to the field of radio frequency integrated circuits, and particularly relates to a radio frequency front-end circuit.
Background
With the development of modern wireless communication technology, radio frequency devices and functional modules. The rf front end refers to the portion between the antenna and the if or baseband circuitry in the communication system. The radio frequency front end comprises a transmitting path, a receiving path and a switching device. The switching device is used for controlling the switching of the receiving and transmitting states. In order to realize the high efficiency and low noise index of the whole circuit, the insertion loss of the switch is required to be as small as possible besides the requirement that the power amplifier realizes high efficiency and the low noise amplifier realizes low noise, and meanwhile, the power of the power amplifier is prevented from leaking to a receiving link, and the switch needs higher isolation.
Therefore, how to implement a radio frequency front end circuit that can simply and conveniently implement switching between two working states and achieve low insertion loss and high isolation is a problem to be solved urgently at present.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a radio frequency front end circuit. The technical problem to be solved by the invention is realized by the following technical scheme:
an embodiment of the present invention provides a radio frequency front end circuit, including:
an antenna, a transmitting unit, a receiving unit and a switch unit;
the transmitting unit is used for transmitting a radio frequency output signal and comprises a plurality of power amplifiers which are sequentially connected in series;
the receiving unit is used for receiving a radio frequency input signal and comprises a plurality of low noise amplifiers which are sequentially connected in series;
the switch unit is connected among the sending unit, the receiving unit and the antenna and is used for conducting the sending unit to be electrically connected with the antenna, or conducting the receiving unit to be electrically connected with the antenna, and the switch unit comprises a multi-coupling coil circuit and a transistor control circuit; the multi-coupling coil circuit is used for realizing port isolation, and a load switching technology is used for adjusting the load.
Optionally, the switch unit further includes: the input port, the first output port and the second output port;
the multi-coupled coil circuit includes: a coil connected to the input port, the first output port, and the second output port, respectively;
the transistor control circuit includes: the multi-coupling coil circuit comprises a first control circuit, a second control circuit and a third control circuit, wherein the first control circuit, the second control circuit and the third control circuit are used for controlling the input load of the multi-coupling coil circuit by using the control level of the first control circuit and realizing the connection between the input port and the first output port or the second output port by using the control levels of the second control circuit and the third control circuit.
Optionally, the multi-coupling coil circuit includes: the first coil is arranged between the second coil and the third coil, one end of the first coil is connected with the input port, the second coil is connected with the first output port, and the third coil is connected with the second output port.
Optionally, the first control circuit is connected to the other end of the first coil, the second control circuit is connected between the second coil and one end of the third control circuit, and the other end of the third control circuit is connected to the third coil.
Optionally, the switch unit further includes:
a control port, an inverter;
the control port is connected with the third control circuit; for providing a control level for the third control circuit;
the inverter is connected between the control port and the second control circuit and between the control port and the first control circuit, and is used for providing control levels for the second control circuit and the first control circuit after the level phase of the control port is inverted by 180 degrees.
Optionally, the first control circuit includes a first transistor, a first gate bias resistor, and a first external resistor between sources of the first transistor, where the first gate bias resistor is connected between a gate of the first transistor and the control port, a drain of the first transistor is connected in parallel with the first output port, a source of the first transistor is grounded, one end of the first external resistor is connected to a substrate of the first transistor, and the other end of the first external resistor is grounded.
Optionally, the second control circuit includes a second transistor, a second gate bias resistor, and a second external resistor between the source of the second transistor, the second gate bias resistor is connected between the gate of the second transistor and the output terminal of the inverter, the drain of the second transistor is connected in parallel with the second output port, the source of the second transistor is grounded, one end of the second external resistor is connected to the substrate of the second transistor, and the other end of the second external resistor is grounded.
Optionally, the third control circuit includes a third transistor, a third gate bias resistor, and a third external resistor between sources of the third transistor, where the third gate bias resistor is connected between a gate of the third transistor and an output end of the inverter, a drain of the third transistor is connected to the first coil, a source of the third transistor is grounded, one end of the third external resistor is connected to a substrate of the third transistor, and the other end of the third external resistor is grounded.
Optionally, when the control port provides the first level, the third transistor switch is turned off, the second transistor and the first transistor switch are turned on, the input port and the second output port are turned on, and the input port and the first output port are turned off.
Optionally, when the control port provides a second level, the third transistor switch is turned on, the second transistor and the first transistor switch are turned off, the input port is disconnected from the second output port, and the input port is turned on from the first output port.
The radio frequency front-end circuit provided by the embodiment of the invention realizes high isolation between the ports by using the multi-coil coupling circuit in the switch unit, realizes output port switching by using the transistor control circuit to communicate the sending unit or the receiving unit, realizes switching of two working states of sending or receiving, and simultaneously adjusts the load of the output end of the switch, and can further realize lower insertion loss, thereby realizing the radio frequency front-end circuit with low insertion loss and high isolation under the switching of the two working states of the circuit.
Of course, not all of the advantages described above need to be achieved at the same time in the practice of any one product or method of the invention.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of an rf front-end circuit according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a detailed structure of an rf front-end circuit according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a switch unit according to an embodiment of the present invention;
fig. 4 is an equivalent circuit diagram of an rf front-end circuit at a first level according to an embodiment of the present invention;
fig. 5 is an equivalent circuit diagram of an rf front-end circuit at a second level according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
In order to achieve the purposes of low insertion loss and high isolation when the circuit is switched between two working states, an embodiment of the invention provides a radio frequency front-end circuit. The rf front-end circuit will be described below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an rf front-end circuit according to an embodiment of the present invention, including:
an antenna 400, a transmitting unit 200, a receiving unit 300, and a switching unit 100;
the transmitting unit 200 is configured to transmit a radio frequency output signal, and the transmitting unit 200 includes a plurality of power amplifiers connected in series in sequence;
the receiving unit 300 is configured to receive a radio frequency input signal, and the receiving unit 300 includes a plurality of sequentially connected low noise amplifiers;
the switch unit 100 is connected between the transmitting unit 200, the receiving unit 300 and the antenna 400, and is configured to connect the transmitting unit 200 and the antenna 400 to achieve electrical connection, or connect the receiving unit 300 and the antenna 400 to achieve electrical connection, and the switch unit 100 includes a multi-coupling coil circuit 101 and a transistor control circuit; the multi-coupling coil circuit is used for realizing port isolation, and a load switching technology is used for adjusting the load.
Hereinafter, each structure in the present embodiment will be described:
(1) transmitting unit 200
The transmitting unit 200 is configured to transmit the amplified rf output signal, and the transmitting unit 200 has a plurality of power amplifiers. In this embodiment, the plurality of Power amplifiers are four Power Amplifiers (PA) for receiving the rf output signal and performing amplification processing. As shown in fig. 1, the four power amplifiers are connected in series, but not limited thereto. In other embodiments, the plurality of power amplifiers may be more than two or more than four power amplifiers.
(2) Receiving unit 300
The receiving unit 300 is used for receiving a radio frequency input signal, and the receiving unit 300 has a plurality of low noise amplifiers. In this embodiment, the plurality of LNAs are four LNAs (low noise amplifiers) for amplifying, reducing or suppressing noise of the rf input signal received from the antenna 400. As shown in fig. 1, four low noise amplifiers are connected in series, but not limited thereto. In other embodiments, the plurality of low noise amplifiers may be more than two or more than four low noise amplifiers.
(3) Switch unit 100
The switching unit 100 is located between the transmitting unit 200 and the antenna 400, and between the receiving unit 300 and the antenna 400. The switch unit 100 is used to connect the transmitting unit 200 and the antenna 400 to realize electrical connection, or connect the receiving unit 300 and the antenna 400 to realize electrical connection, so as to realize switching between two working states of transmitting and receiving.
It can be understood that the switch unit 100 selects one output port to be conducted with the input port, the switch unit 100 utilizes the multi-coil coupling circuit to realize port isolation, and the transistor control circuit is utilized to adjust the load of the conducted port.
The radio frequency front-end circuit provided by the embodiment of the invention realizes high isolation between the ports by using the multi-coil coupling circuit in the switch unit, realizes output port switching by using the transistor control circuit to communicate the sending unit or the receiving unit, realizes switching of two working states of sending or receiving, and simultaneously adjusts the load of the output end of the switch, and can further realize lower insertion loss, thereby realizing the radio frequency front-end circuit with low insertion loss and high isolation under the switching of the two working states of the circuit.
Referring to fig. 2, fig. 2 is a schematic diagram illustrating a specific structure of an rf front-end circuit according to an embodiment of the present invention. The following mainly describes the switch unit of the rf front-end circuit provided in this embodiment in detail, and the rest of the modules are not described again.
In this embodiment, the switch unit further includes: an input port P1, a first output port P2, a second output port P3.
The transmitting unit 200 is connected to the first output port P2, the receiving unit 300 is connected to the second output port P3, and the antenna 400 is connected to the input port P1.
Specifically, the multi-coupled coil circuit 101 includes coils connected to the input port P1, the first output port P2, and the second output port P3, respectively;
the transistor control circuit includes: a first control circuit 110, a second control circuit 120 and a third control circuit 130 for controlling the input load of the multi-coupled coil circuit 101 with the control level of the first control circuit 110, and realizing the connection between the input port P1 and the first output port P2 or the second output port P3 with the control levels of the second control circuit 120 and the third control circuit 130.
It can be understood that the multi-coupling coil circuit 101 can isolate the input port P1, the first output port P2 and the second output port P3, and improve the isolation between the input port P1 and each output port.
Each control circuit is configured with a corresponding level signal, and different working states can be realized under different level signals. The embodiment of the invention controls the working state of each control circuit by configuring the level signal of each control circuit, thereby realizing the conduction of the first output port P2 or the second output port P3 and the input port P1, more simply realizing the switching of two working states and improving the design freedom of the single-pole double-throw switch; moreover, for the conducting circuits corresponding to different output ports, the control level of the first control circuit 110 can be used to correspondingly control the input load of the multi-coupling coil circuit 101, so as to realize load matching, and thus, the insertion loss of each conducting circuit can be reduced.
The switch unit provided by the embodiment of the invention controls the working state of each control circuit by configuring the level signal of each control circuit, and realizes the conduction of the first output port or the second output port and the input port, so that the switching of the two working states can be realized more simply and conveniently, and the design freedom of the switch unit is improved; moreover, a load switching technology is introduced into the input port, and switching of different input loads is realized according to different working states of the transistor in the first control circuit, so that the degree of mismatching of the input port with the first output port and the second output port is reduced, and lower insertion loss is realized in the two working states; the input port, the first output port and the second output port can be isolated through the multi-coupling coil circuit, and the isolation degree between the input port and each output port is improved.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a specific structure of a switch unit according to an embodiment of the present invention.
Optionally, the multi-coupled coil circuit 101 includes: a first coil L1, a second coil L2, and a third coil L3, the first coil L1 being disposed between the second coil L2 and the third coil L3, one end of the first coil L1 being connected to the input port P1, the second coil L2 being connected to the second output port P2, the third coil L3 being connected to the second output port P3; the multi-coupled coil circuit 101 can isolate the input port P1, the first output port P2, and the second output port P3, and improve the isolation between the input port P1 and the first output port P2 or the isolation between the input port P1 and the second output port P3.
Alternatively, the first control circuit 110 is connected to the other end of the first coil L1, the second control circuit 120 is connected between the second coil L2 and one end of the third control circuit, and the other end of the third control circuit 130 is connected to the third coil L3.
It is understood that the transistor control circuit is capable of controlling the operating state of the switching unit based on the control level, i.e.: the input port P1 is controlled to be conductive with the first output port P2 and disconnected with the second output port P3; or, the input port P1 is controlled to be connected with the second output port P3 and disconnected with the first output port P2, so that the two working states can be switched easily, and the degree of freedom of design of the single-pole double-throw switch is improved; meanwhile, the load of the first coil L1 is controlled, so that the degree of mismatch between the input port P1 and the first and second output ports P2 and P3 is reduced, that is, the difference between the insertion loss between the input port P1 and the first output port P2 and the insertion loss between the input port P1 and the second output port P3 is reduced, and the input port P1 and the first output port P2 are turned on, or the input port P1 and the second output port P3 are turned on in two working states, which have lower insertion loss.
Optionally, the switch unit provided in the embodiment of the present invention further includes:
a control port VC and an inverter INV;
the control port VC is connected with a third control circuit; for providing a control level for the third control circuit;
the inverter is connected between the control port VC and the second control circuit and between the control port VC and the first control circuit, and is used for providing control levels for the second control circuit and the first control circuit after the level phase of the control port VC is inverted by 180 degrees.
It should be noted that the control ports VC in this embodiment are the same port, and for convenience of understanding, the control ports VC are respectively shown.
The inverter INV is configured to invert the phase of the input signal by 180 degrees, that is, the control port VC is the control level of the second control circuit 120 and the control level of the first control circuit 110 are inverted by 180 degrees.
Specifically, the inverter may be a TTL not gate, a CMOS inverter, and the like, and in this embodiment, the TTL not gate is selected as the inverter.
Specifically, the control port VC directly provides a control level for the third control circuit 130, that is, the control level of the control port VC is equal to the control level of the third control circuit 110, and after the phase of the control level provided by the control port VC is inverted by 180 degrees by the inverter INV, the control level is provided to the second control circuit 120 and the first control circuit 110, so as to obtain the control level of the second control circuit 120 and the control level of the first control circuit 110, that is, the phase difference between the control level of the third control circuit 130 and the control level of the second control circuit 120 and the control level of the first control circuit 110 is 180 degrees.
It can be understood that the switch unit provided in this embodiment further includes: one end of a bypass capacitor C1 and one end of a bypass capacitor C1 are connected with the first coil L1, and the other end of the bypass capacitor C1 is grounded. As will be understood by those skilled in the art, the bypass capacitor can bypass and filter out high-frequency components in an alternating current signal mixed with high-frequency current and low-frequency current, and can filter out high-frequency noise in the signal at the input port P1 as a filtering object and high-frequency noise carried by a preceding stage.
In this embodiment, the first control circuit includes a first transistor M1, a first gate bias resistor R1, and a first external resistor Rsub1 between the sources of the first transistor M1, the first gate bias resistor R1 is connected between the gate of the first transistor M1 and the control port VC, the drain of the first transistor M1 is connected to the first coil L1, the source of the first transistor M1 is grounded, one end of the first external resistor Rsub1 is connected to the substrate of the first transistor M1, and the other end of the first external resistor Rsub1 is grounded.
The second control circuit comprises a second transistor M2, a second gate bias resistor R2 and a second external resistor Rsub2 between the sources of the second transistor M2, the second gate bias resistor R2 is connected between the gate of the second transistor M2 and the output end of the inverter INV, the drain of the second transistor M2 is connected in parallel with the first output port P2, the source of the second transistor M2 is grounded, one end of the second external resistor Rsub2 is connected to the substrate of the second transistor M2, and the other end of the second external resistor Rsub2 is grounded.
The third control circuit comprises a third transistor M3, a third gate bias resistor R3 and a third external resistor Rsub3 between the sources of the third transistor M3, the third gate bias resistor R3 is connected between the gate of the third transistor M3 and the output end of the inverter INV, the drain of the third transistor M3 is connected in parallel with the second output port P3, the source of the third transistor M3 is grounded, one end of the third external resistor Rsub3 is connected to the substrate of the third transistor M3, and the other end of the third external resistor Rsub3 is grounded.
It should be noted that the first gate bias resistor R1, the second gate bias resistor R2 and the third gate bias resistor R3 are used to improve the isolation between the switching rf signal and the control signal.
The first external resistor Rsub1, the second external resistor Rsub2, and the third external resistor Rsub3 are used to reduce the resistance of the substrate of the transistor connected thereto, and can reduce the insertion loss.
Two operating states of the rf front-end circuit are described below to facilitate understanding of the operating principle of the rf front-end circuit of the present invention.
Referring to fig. 4, fig. 4 is an equivalent circuit diagram of an rf front-end circuit at a first level according to an embodiment of the present invention. The connection relationship between other units of the out-frequency front-end circuit and the switch unit is the same as that described above, and will not be described repeatedly.
In this embodiment, when the control port VC provides the first level, the third transistor M3 switch is turned off, the second transistor M2 and the first transistor M1 switch are turned on, the input port P1 and the second output port P3 are turned on, and the input port P1 and the first output port P2 are turned off.
The level signal is a signal represented by a level value, and includes a high level "1" and a low level "0".
In an alternative embodiment:
the first level is a low level, such as 0. As will be understood in conjunction with fig. 4, since the control port VC provides a low level, the control level of the third control circuit 130 is also a low level, and it will be understood by those skilled in the art that, according to the operating principle of the transistors, the third transistor M3 switch is turned off, the third transistor M3 is equivalent to a transistor off capacitor Coff3, the control level of the second control circuit 120 and the control level of the first control circuit 110 are high level under the action of the inverter INV, the second transistor M2 and the first transistor M1 switch are turned on according to the operating principle of the transistors, the second transistor M2 is equivalent to a transistor on resistor Ron2, the first transistor M1 is equivalent to a transistor on resistor Ron1, the third transistor M3 is equivalent to a transistor off capacitor Coff3, so that the input port P1 is turned on with the second output port P3, the transistor on resistor Ron2 is equivalent to a load of the first output port P2, the transistor on-resistance Ron2 shorts the first output port P2 to ground, so the input port P1 is disconnected from the first output port P2. Therefore, the parasitic capacitances of the second inductor L2, the third inductor L3, and the third transistor M3 act as a load for the second output port P3.
Referring to fig. 5, fig. 5 is an equivalent circuit diagram of an rf front-end circuit at a second level according to an embodiment of the present invention. The connection relationship between other units of the out-frequency front-end circuit and the switch unit is the same as that described above, and will not be described repeatedly.
In this embodiment, when the control port VC provides the second level, the third transistor M3 switch is turned on, the second transistor M2 and the first transistor M1 switch are turned off, the input port P1 is disconnected from the second output port P3, and the input port P1 is turned on from the first output port P2.
In an alternative embodiment:
the second level is high, e.g. not 0. As will be understood in conjunction with fig. 5, since the control port VC provides a high level, the control level of the first control circuit 110 is also a high level, and it will be understood by those skilled in the art that, according to the operating principle of the transistors, the third transistor M3 switch is turned on, while the third transistor M3 is equivalent to the transistor on-resistance Ron3, and under the action of the inverter INV, the control level of the second control circuit 120 and the control level of the first control circuit 110 are low, and according to the operating principle of the transistors, the second transistor M2 and the first transistor M1 switch are turned off, while the second transistor M2 is equivalent to the transistor off-capacitance Coff2, the first transistor M1 is equivalent to the transistor off-capacitance Coff1, the third transistor M3 is equivalent to the transistor on-resistance Ron3, and the transistor on-resistance Ron3 shorts the second output port P3 to the ground, so that the input port P1 is disconnected from the second output port P3, the transistor off capacitor Coff2 is equivalent to a load of the first output port P2, so the input port P1 and the first output port P2 are turned on. The second inductor L2, the third inductor L3, the parasitic capacitance of the first transistor M1, and the parasitic capacitance of the second transistor M2 serve as loads of the first output port P2.
In this embodiment, the operating principle that the transistors are turned on or off at different levels is utilized, the level of the control port is controlled, the same control level as that of the control port is provided for the transistor in the first control circuit, and the inverter is utilized to provide the control level opposite to that of the control port for the transistor in the second control circuit and the transistor in the third control circuit, so that switching between two operating states can be realized more conveniently, and the degree of freedom in designing the single-pole double-throw switch is improved; meanwhile, a load switching technology is introduced into the input port, switching of different input loads is achieved according to different working states of the transistor in the first control circuit, and low insertion loss is achieved in the two working states.
Compared with the radio-frequency front-end circuit shown in fig. 1 and 2, the radio-frequency front-end circuit provided by the embodiment of the invention can improve the isolation between the switch radio-frequency signal and the control signal through the gate bias resistance of the transistor control circuit, can reduce the resistance of the substrate of the transistor through the external resistor, achieves the purpose of reducing the insertion loss, further ensures that the single-pole double-throw switch has smaller insertion loss and higher isolation performance in two working states, and can realize good matching between the input port and the two output ports of the millimeter wave integrated circuit switch.
In order to verify the working effect of the rf front-end circuit provided by the embodiment of the present invention, the following description is made with reference to specific parameters of the switch unit.
In an alternative embodiment, the first transistor M1 is composed of 6 groups of field effect transistors, each group of field effect transistors includes 48 channels, and the channel width is 1 μ M and the channel length is 40 nm; the second transistor M2 is composed of 6 groups of field effect transistors, each group of field effect transistors comprises 48 channels, the width of each channel is 1 μ M, and the length of each channel is 40 nm; the third transistor M3 is composed of 9 groups of field effect transistors, and each group of field effect transistors includes 48 channels, and the channel width is 1 μ M and the channel length is 40 nm.
The first gate bias resistor R1, the second gate bias resistor R2 and the third gate bias resistor R3 all have a resistance of 3K Ω.
The resistances of the first external resistor Rsub1, the second external resistor Rsub2 and the third external resistor Rsub3 are all 6K Ω, and the capacitance of the bypass capacitor C1 is 40 fF.
In this embodiment, for the switch unit with the above structural parameters, it is possible to implement: the application frequency band comprises 30 GHz-45 GHz. In the application frequency band, the mismatch degree of the insertion loss of the input port P1 and the first output port P2 and the second output port P3 is less than 0.20dB, the insertion loss of the input port P1 and the first output port P2 and the second output port P3 is less than 1.87dB, and the isolation degree of the input port P1 and the first output port P2 and the second output port P3 is more than 23.2 dB.
It can be understood that the application frequency band selected by this simulation is 24GHz to 35GHz, because this frequency band is the main application frequency band of 5G communication at present.
It should be noted that the structural parameters in the switch unit provided by the embodiment of the present invention are not limited thereto, and those skilled in the art can think that the same effect can be achieved by using different structures with different parameters according to different use conditions.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A radio frequency front end circuit, comprising:
an antenna, a transmitting unit, a receiving unit and a switch unit;
the transmitting unit is used for transmitting a radio frequency output signal and comprises a plurality of power amplifiers which are sequentially connected in series;
the receiving unit is used for receiving a radio frequency input signal and comprises a plurality of low noise amplifiers which are sequentially connected in series;
the switch unit is connected among the sending unit, the receiving unit and the antenna and used for conducting the sending unit and the antenna to realize electric connection, or conducting the receiving unit and the antenna to realize electric connection, and the switch unit comprises a multi-coupling coil circuit and a transistor control circuit; the multi-coupling coil circuit is used for realizing port isolation, and a load switching technology is used for adjusting the load.
2. The RF front-end circuit of claim 1,
the switching unit further includes: an input port (P1), a first output port (P2), a second output port (P3);
the multi-coupled coil circuit includes: coils connected to the input port (P1), the first output port (P2), and the second output port (P3), respectively;
the transistor control circuit includes: a first control circuit, a second control circuit and a third control circuit for controlling an input load of the multi-coupled coil circuit with a control level of the first control circuit, and implementing a connection between the input port (P1) and the first output port (P2) or the second output port (P3) with a control level of the second control circuit and the third control circuit.
3. The radio frequency front-end circuit of claim 2, wherein the multi-coupled coil circuit comprises: a first coil (L1), a second coil (L2), and a third coil (L3), the first coil (L1) being disposed between the second coil (L2) and the third coil (L3), one end of the first coil (L1) being connected to the input port (P1), the second coil (L2) being connected to the first output port (P2), the third coil (L3) being connected to the second output port (P3).
4. The radio frequency front-end circuit according to claim 3, wherein the first control circuit is connected to the other end of the first coil (L1), the second control circuit is connected between the second coil (L2) and one end of the third control circuit, the other end of the third control circuit is connected to the third coil (L3).
5. The RF front-end circuit of claim 4, wherein the switching unit further comprises:
a control port (VC), an Inverter (INV);
the control port (VC) is connected with the third control circuit; for providing a control level for the third control circuit;
the inverter is connected between the control port (VC) and the second control circuit and between the control port (VC) and the first control circuit, and is used for turning the level phase of the control port (VC) by 180 degrees and then providing control levels for the second control circuit and the first control circuit.
6. The RF front-end circuit according to claim 5, wherein the first control circuit comprises a first transistor (M1), a first gate bias resistor (R1), and a first external resistor (Rsub1) between sources of the first transistor (M1), the first gate bias resistor (R1) is connected between the gate of the first transistor (M1) and the control port (VC), a drain of the first transistor (M1) is connected in parallel with the first output port (P2), a source of the first transistor (M1) is grounded, one end of the first external resistor (Rsub1) is connected to a substrate of the first transistor (M1), and the other end of the first external resistor (Rsub1) is grounded.
7. The RF front-end circuit according to claim 6, wherein the second control circuit comprises a second transistor (M2), a second gate bias resistor (R2), and a second external resistor (Rsub2) coupled between the source of the second transistor (M2), the second gate bias resistor (R2) is coupled between the gate of the second transistor (M2) and the output terminal of the Inverter (INV), the drain of the second transistor (M2) is coupled in parallel with the second output port (P3), the source of the second transistor (M2) is grounded, one end of the second external resistor (Rsub2) is coupled to the substrate of the second transistor (M2), and the other end of the second external resistor (Rsub2) is grounded.
8. The RF front-end circuit of claim 7, wherein the third control circuit comprises a third transistor (M3), a third gate bias resistor (R3), and a third external resistor (Rsub3) coupled between the sources of the third transistor (M3), the third gate bias resistor (R3) is coupled between the gate of the third transistor (M3) and the output terminal of the Inverter (INV), the drain of the third transistor (M3) is coupled to the first coil (L1), the source of the third transistor (M3) is coupled to ground, one end of the third external resistor (Rsub3) is coupled to the substrate of the third transistor (M3), and the other end of the third external resistor (Rsub3) is coupled to ground.
9. The RF front-end circuit according to claim 8, wherein when the control port (VC) provides the first level, the third transistor (M3) switch is turned off, the second transistor (M2) and the first transistor (M1) switch are turned on, the input port (P1) and the second output port (P3) are turned on, and the input port (P1) and the first output port (P2) are turned off.
10. The RF front-end circuit according to claim 8, wherein when the control port (VC) provides the second level, the third transistor (M3) switch is turned on, the second transistor (M2) and the first transistor (M1) switch are turned off, the input port (P1) is disconnected from the second output port (P3), and the input port (P1) is turned on from the first output port (P2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011197075.5A CN112491441A (en) | 2020-10-30 | 2020-10-30 | Radio frequency front-end circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011197075.5A CN112491441A (en) | 2020-10-30 | 2020-10-30 | Radio frequency front-end circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112491441A true CN112491441A (en) | 2021-03-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011197075.5A Withdrawn CN112491441A (en) | 2020-10-30 | 2020-10-30 | Radio frequency front-end circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115987263A (en) * | 2022-12-06 | 2023-04-18 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency switch circuit and radio frequency front end module |
-
2020
- 2020-10-30 CN CN202011197075.5A patent/CN112491441A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115987263A (en) * | 2022-12-06 | 2023-04-18 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency switch circuit and radio frequency front end module |
| CN115987263B (en) * | 2022-12-06 | 2023-11-03 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency switch circuit and radio frequency front end module |
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Application publication date: 20210312 |
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| WW01 | Invention patent application withdrawn after publication |