CN112491389A - Millimeter wave filter circuit - Google Patents
Millimeter wave filter circuit Download PDFInfo
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- CN112491389A CN112491389A CN202011192537.4A CN202011192537A CN112491389A CN 112491389 A CN112491389 A CN 112491389A CN 202011192537 A CN202011192537 A CN 202011192537A CN 112491389 A CN112491389 A CN 112491389A
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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Abstract
The invention discloses a millimeter wave filter circuit, which comprises a first switch unit, a second switch unit and a third switch unit, wherein the first switch unit is used for receiving radio frequency signals and comprises a transformer circuit and a transistor control circuit; the filter is used for filtering the radio-frequency signal output by the first switch unit and outputting a filtered radio-frequency signal; the second switch unit is used for receiving the filtered radio frequency signal and comprises a transformer circuit and a transistor control circuit; the detector is used for converting the radio-frequency signal output by the second switching unit into an analog voltage signal; an A/D converter for converting the analog voltage signal into a digital signal; and the control module is used for receiving the digital signal and selecting the output port of the first switch unit and the input port of the second switch unit based on the digital signal. The millimeter wave filter circuit provided by the invention realizes the circuit performance with low insertion loss and high isolation under two different working states.
Description
Technical Field
The invention belongs to the field of wireless communication, and particularly relates to a millimeter wave filter circuit.
Background
The filter is a frequency selective device. The millimeter wave filter is an important part in the existing millimeter wave communication technology, is an indispensable device in a millimeter wave system, and the quality of the performance of the millimeter wave filter can directly influence the quality of the whole communication system. In recent years, with the rapid development of millimeter wave technology, the demand of such devices in the fields of communication, radar, remote sensing, and radio astronomy has increased.
At present, a millimeter wave wireless communication system mostly transmits and receives communications between different frequencies and different types of communications, channels need to be switched and selected through a switch in the system, and a switch device is widely used in the field of wireless communication. The insertion loss and the isolation are important parameters for measuring the radio frequency integrated switch, and a switch with low insertion loss and high isolation is usually required to be designed.
However, most of the millimeter wave integrated switches of today adopt PIN diode switches or solid-state FET switches, and in order to pursue high isolation, a structure in which a plurality of switches are connected in parallel is often adopted, but the increase of the number of switches brings excessive insertion loss.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a millimeter wave filter circuit. The technical problem to be solved by the invention is realized by the following technical scheme:
an embodiment of the present invention provides a millimeter wave filter circuit, including:
the first switch unit is used for receiving radio frequency signals and comprises a transformer circuit and a transistor control circuit, wherein the transformer circuit is used for realizing port isolation, and a load is adjusted by using a load switching technology;
the filter is used for filtering the radio-frequency signal output by the first switch unit and outputting a filtered radio-frequency signal;
the second switch unit is used for receiving the filtered radio frequency signal, comprises a transformer circuit and a transistor control circuit, realizes port isolation by using the transformer circuit, and adjusts a load by using a load switching technology;
the detector is used for converting the radio frequency signal output by the second switching unit into an analog voltage signal;
an A/D converter for converting the analog voltage signal into a digital signal;
and the control module is used for receiving the digital signal and selecting the output port of the first switch unit and the input port of the second switch unit based on the digital signal.
Optionally, the first switch or the second switch further includes: a first port, a second port, and a third port; in the first switch unit, the first port is an input port, and the second port and the third port are output ports, and in the second switch unit, the second port and the third port are input ports, and the first port is an output port;
the transformer circuit comprises a transformer consisting of a first inductor winding and a second inductor winding, and is used for isolating the first port, the second port and the third port;
the transistor control circuit comprises a first control circuit, a second control circuit and a third control circuit, the first inductor is connected between the first port and the third control circuit, the second inductor is connected between the second port and the third port, the first control circuit is connected between the second port and the second control circuit, the second control circuit is connected between the third port and the first control circuit, and the transistor control circuit realizes the conduction of the first port and the second port or the conduction of the first port and the third port based on the control level of the first control circuit and the control level of the second control circuit; the transistor control circuit controls the load of the first inductor based on a control level of the third control circuit.
Optionally, the first switch unit or the second switch unit further includes:
a control port coupled to the first control circuit, the second control circuit, and the third control circuit, the control port configured to provide a control level of the first control circuit, a control level of the second control circuit, and a control level of the third control circuit to the transistor control circuit;
an inverter for connecting the control port with the second control circuit, and the control port with the third control circuit.
Optionally, the first control circuit includes a first transistor, a first gate bias resistor, and a first external resistor between sources of the first transistor, where the first gate bias resistor is connected between a gate of the first transistor and the control port, a drain of the first transistor is connected in parallel with the second port, a source of the first transistor is grounded, one end of the first external resistor is connected to a substrate of the first transistor, and the other end of the first external resistor is grounded.
Optionally, the second control circuit includes a second transistor, a second gate bias resistor, and a second external resistor between the source of the second transistor, the second gate bias resistor is connected between the gate of the second transistor and the output terminal of the inverter, the drain of the second transistor is connected in parallel with the third port, the source of the second transistor is grounded, one end of the second external resistor is connected to the substrate of the second transistor, and the other end of the second external resistor is grounded.
Optionally, the third control circuit includes a third transistor, a third gate bias resistor, and a third external resistor between sources of the third transistor, where the third gate bias resistor is connected between a gate of the third transistor and an output end of the inverter, a drain of the third transistor is connected to the first inductor coil, a source of the third transistor is grounded, one end of the third external resistor is connected to a substrate of the third transistor, and the other end of the third external resistor is grounded.
Optionally, the control port provides a first level, the first transistor switch is turned off, the second transistor switch and the third transistor switch are turned on, the first port and the second port are turned on, and the first port and the third port are turned off.
Optionally, the control port provides a second level, the first transistor switch is turned on, the second transistor switch and the third transistor switch are turned off, the first port is disconnected from the second port, and the first port is turned on from the third port.
Optionally, the first switch unit or the second switch unit further includes: and one end of the bypass capacitor is connected with the first inductance coil, and the other end of the bypass capacitor is grounded.
Optionally, the application frequency band includes 24GHz to 35GHz, and in the application frequency band, in the first switch unit and the second switch unit, the mismatch degree of the insertion loss between the input port and each output port is less than 0.24dB, the insertion loss between the input port and each output port is less than 2.2dB, and the isolation degree between the input port and each output port is greater than 23.2 dB.
The millimeter wave filter circuit provided by the embodiment of the invention can select the output port of the first switch unit and the input port of the second switch unit to realize the switching of different circuits, the first switch unit and the second switch unit can improve the isolation degree by using the transformer circuit, and can realize the load switching technology by using the transistor control circuit, adjust the load and further realize lower insertion loss.
Of course, not all of the advantages described above need to be achieved at the same time in the practice of any one product or method of the invention.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a millimeter wave filter circuit according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a millimeter wave filter circuit according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a first switch unit according to an embodiment of the present invention;
fig. 4 is an equivalent circuit diagram of the first switch unit at the first level according to the embodiment of the present invention;
fig. 5 is an equivalent circuit diagram of the first switch unit at the second level according to the embodiment of the present invention;
fig. 6 is a diagram of simulation results of the first switch unit according to the embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
In order to achieve the purposes of low insertion loss and high isolation when the circuit is switched between two working states, the embodiment of the invention provides a millimeter wave filter circuit. Next, description will be made on the millimeter wave filter circuit. Fig. 1 is a schematic structural diagram of a millimeter wave filter circuit according to an embodiment of the present invention.
Referring to fig. 1, a millimeter wave filter circuit according to an embodiment of the present invention includes:
the first switch unit is used for receiving radio frequency signals and comprises a transformer circuit and a transistor control circuit, the transformer circuit is used for realizing port isolation, and a load switching technology is used for adjusting a load;
the filter is used for filtering the radio-frequency signal output by the first switch unit and outputting a filtered radio-frequency signal;
the second switch unit is used for receiving the filtered radio frequency signal, comprises a transformer circuit and a transistor control circuit, realizes port isolation by using the transformer circuit, and adjusts a load by using a load switching technology;
the detector is used for converting the radio-frequency signal output by the second switching unit into an analog voltage signal;
an A/D converter for converting the analog voltage signal into a digital signal;
and the control module is used for receiving the digital signal and selecting the output port of the first switch unit and the input port of the second switch unit based on the digital signal.
Hereinafter, each structure in the present embodiment will be described:
(1) first and second switching units:
the first switch unit and the second switch unit respectively comprise a transformer circuit and a transistor control circuit, port isolation can be achieved through the transistor control circuit, and a load can be adjusted through a load switching technology.
It is understood that the first switch unit transmits the rf signal to the filter after receiving the rf signal, and the second switch unit receives the filtered rf signal and transmits the filtered rf signal to the detector.
(2) A filter:
the filter receives the radio frequency signal output by the first switch unit. In this embodiment, the filter is a filter in the prior art. The received radio frequency signal is filtered through the filter, so that the suppression of harmonic waves is achieved, and the interference to a system is reduced.
(3) A detector:
in this embodiment, the detector is a radio frequency detector. The detector receives the radio frequency signal output by the second switch unit, converts the received radio frequency signal into an analog voltage signal and transmits the analog voltage signal to the A/D converter.
(4) An A/D converter:
in this embodiment, the a/D converter receives the analog voltage signal output by the detector, converts the analog voltage signal into a digital signal, and transmits the digital signal to the control module.
(5) A control module:
in this embodiment, after receiving the digital signal, the control module provides a control level for the first switch unit or the second switch unit based on the digital signal, so as to select a certain output port of the first switch unit and a certain input port of the second switch unit, and to implement switching between different circuits.
The millimeter wave switch filter provided by the embodiment of the invention can select the output port of the first switch unit and the input port of the second switch unit to realize the switching of different circuits, the isolation of the first switch unit and the second switch unit can be improved by using a transformer circuit, and the load switching technology can be realized by using a transistor control circuit to adjust the load, so that the lower insertion loss is further realized.
The switching unit of the millimeter wave filter circuit provided in the present embodiment will be described in detail below. Referring to fig. 2, fig. 2 is a schematic diagram of a specific structure of a millimeter wave filter circuit according to an embodiment of the present invention. The following mainly describes the structure of the first switch unit or the second switch unit, and the rest of the components are not described herein.
In this embodiment, the first switch unit or the second switch unit further includes: a first port P1, a second port P2, and a third port P3; in the first switch unit, the first port P1 is an input port, the second port P2 and the third port P3 are output ports, and in the second switch unit, the second port P2 and the third port P3 are input ports, and the first port P1 is an output port.
The transformer circuit includes a transformer TF composed of a first inductor L1 and a second inductor L2, and is used for isolating the first port P1, the second port P2 and the third port P3.
The transistor control circuit comprises a first control circuit, a second control circuit and a third control circuit, wherein a first inductor L1 is connected between a first port P1 and the third control circuit, a second inductor L2 is connected between a second port P2 and a third port P3, the first control circuit is connected between a second port P2 and the second control circuit, the second control circuit is connected between a third port P3 and the first control circuit, and the transistor control circuit realizes the conduction of the first port P1 and the second port P2 or the conduction of the first port P1 and the third port P3 based on the control level of the first control circuit and the control level of the second control circuit; the transistor control circuit controls the load of the first inductor L1 based on the control level of the third control circuit.
In the transformer circuit 100, the first inductor L1, i.e., the primary winding, of the transformer TF has one end connected to the first port P1 and the other end connected to the third control circuit 130; the second inductor L2, i.e. the secondary winding, of the transformer TF has one end connected to the second port P2 and the other end connected to the third port P3. Therefore, the transformer circuit can isolate the first port P1, the second port P2, and the third port P3, and improve the isolation between the first port P1 and the second port P2 or the isolation between the first port P1 and the third port P3.
The transistor control circuit is capable of controlling the operating state of the first switching unit or the second switching unit based on the control level, i.e.: the first port P1 and the second port P2 are controlled to be connected, the first port P1 and the third port P3 are controlled to be disconnected, or the first port P1 and the third port P3 are controlled to be connected, the first port P1 and the second port P2 are controlled to be disconnected, and the load of the first inductor L1 is controlled, so that the mismatching degree of the first port P1 and the second port P2 and the third port P3 is reduced, that is, the difference between the insertion loss between the first port P1 and the second port P2 and the insertion loss between the first port P1 and the third port P32 is reduced, and the first port P1 and the second port P2 are connected, or the first port P1 and the second port P3 are connected, and have lower insertion loss in two three-port working states.
In this embodiment, the filter receives the rf signal output from the second port P2 or the third port P3 of the first switch unit. It can be understood that the filter also has two corresponding input ports and two output ports, the two input ports of the filter are respectively used for selectively receiving the radio frequency signal output by the second port P2 or the third port P3 of the first switch unit, and the two output ports of the filter correspondingly output the radio frequency signal received by a certain input port, and then input the radio frequency signal to the second switch unit. And, the second port P2 or the third port P3 of the second switch unit selects a radio frequency signal of a certain output port of the receiving filter.
The first switch unit or the second switch unit realizes the conduction of the first port P1 and the second port P2, or the conduction of the first port P1 and the third port P3 based on the control level provided by the control module.
An optional implementation of the structure of the millimeter wave switch filter device provided in the embodiment of the present invention is described below, specifically describing a circuit structure of the first switch unit or the second switch unit, and the rest of the structures are not described again. Referring to fig. 3, fig. 3 is a schematic circuit structure diagram of a first switch unit according to an embodiment of the present invention. It will be understood by those skilled in the art that the second switching unit is similar in structure to the first switching unit, as can be appreciated with reference to fig. 3.
The first switch unit or the second switch unit provided by the embodiment of the invention further comprises: a control port VC connected to the first control circuit 110, the second control circuit 120, and the third control circuit 130, the control port VC being configured to provide a control level of the first control circuit 110, a control level of the second control circuit 120, and a control level of the third control circuit 130 for the transistor control circuit;
the inverter INV is used for connecting the control port VC and the second control circuit 120, and connecting the control port VC and the third control circuit 130.
It should be noted that the control ports VC in this embodiment are the same port, and for convenience of understanding, the control ports VC are respectively shown.
The inverter INV is configured to invert the phase of the input signal by 180 degrees, that is, to invert the phase of the control level of the second control circuit 120 and the control level of the third control circuit 130, which are provided by the control port VC, by 180 degrees.
Specifically, the control port VC directly provides a control level for the first control circuit 110, that is, the control level of the control port VC is equal to the control level of the first control circuit 110, and after the phase of the control level provided by the control port VC is inverted by 180 degrees by the inverter INV, the control level is provided to the second control circuit 120 and the third control circuit 130, so as to obtain the control level of the second control circuit 120 and the control level of the third control circuit 130, that is, the phase difference between the control level of the first control circuit 110 and the control levels of the second control circuit 120 and the third control circuit 130 is 180 degrees.
The first switch unit or the second switch unit provided by the embodiment of the invention further comprises: one end of a bypass capacitor C1 and one end of a bypass capacitor C1 are connected with the first inductance coil L1, and the other end of the bypass capacitor C1 is grounded. As will be understood by those skilled in the art, the bypass capacitor can bypass and filter out high-frequency components in an alternating current signal mixed with high-frequency current and low-frequency current, and can filter out high-frequency noise in the signal of the first port P1 as a filtering object and high-frequency noise carried by a preceding stage.
The first control circuit comprises a first transistor M1, a first gate bias resistor R1 and a first external resistor Rsub1 between the sources of the first transistor M1, the first gate bias resistor R1 is connected between the gate of the first transistor M1 and the control port VC, the drain of the first transistor M1 is connected in parallel with the second port P2, the source of the first transistor M1 is grounded, one end of the first external resistor Rsub1 is connected with the substrate of the first transistor M1, and the other end of the first external resistor Rsub1 is grounded.
The second control circuit comprises a second transistor M2, a second gate bias resistor R2 and a second external resistor Rsub2 between the sources of the second transistor M2, the second gate bias resistor R2 is connected between the gate of the second transistor M2 and the output end of the inverter INV, the drain of the second transistor M2 is connected in parallel with the third port P3, the source of the second transistor M2 is grounded, one end of the second external resistor Rsub2 is connected to the substrate of the second transistor M2, and the other end of the second external resistor Rsub2 is grounded.
The third control circuit comprises a third transistor M3, a third gate bias resistor R3 and a third external resistor Rsub3 between the sources of the third transistor M3, the third gate bias resistor R3 is connected between the gate of the third transistor M3 and the output end of the inverter INV, the drain of the third transistor M3 is connected to the first inductor L1, the source of the third transistor M3 is grounded, one end of the third external resistor Rsub3 is connected to the substrate of the third transistor M3, and the other end of the third external resistor Rsub3 is grounded.
It should be noted that the first gate bias resistor R1, the second gate bias resistor R2 and the third gate bias resistor R3 are used to improve the isolation between the switching rf signal and the control signal.
The first external resistor Rsub1, the second external resistor Rsub2, and the third external resistor Rsub3 are used to reduce the resistance of the substrate of the transistor connected thereto, and can reduce the insertion loss.
In the following, two operating states of the first switching unit are described in order to facilitate an understanding of the operating principle of the first switching unit of the present invention. It can be understood that the first switch unit and the second switch unit have similar structures and similar operating states, and only the operating state of the first switch unit is described in detail here, and the second switch unit is not repeated.
Referring to fig. 4, fig. 4 is an equivalent circuit diagram of the first switching unit at the first level according to the embodiment of the present invention.
In this embodiment, the control port VC provides the first level, the first transistor M1 is turned off, the second transistor M2 and the third transistor M3 are turned on, the first port P1 and the second port P2 are turned on, and the first port P1 and the third port P3 are turned off.
Referring to fig. 5, fig. 5 is an equivalent circuit diagram of the first switching unit at the second level according to the embodiment of the present invention.
In this embodiment, the control port VC provides the second level, the switch of the first transistor M1 is turned on, the switches of the second transistor M2 and the third transistor M3 are turned off, the first port P1 is turned off from the second port P2, and the first port P1 is turned on from the third port P3.
In an alternative embodiment:
the first level is a low level, such as 0. As will be understood from fig. 4, since the control port VC provides a low level, the control level of the first control circuit 110 is also a low level, and it can be understood by those skilled in the art that, according to the operation principle of the transistors, the switch of the first transistor M1 is turned off, at which time the switch of the first transistor M1 is equivalent to the transistor off-capacitor Coff1, and under the action of the inverter INV, the control levels of the second control circuit 120 and the third control circuit 130 are high, and according to the operation principle of the transistors, the switches of the second transistor M2 and the third transistor M3 are turned on, at which time the switch of the second transistor M2 is equivalent to the transistor on-resistor Ron2, and the switch of the third transistor M3 is equivalent to the transistor on-resistor Ron 3. At this time, the transistor off-capacitor Coff1 is equivalent to the load of the second port P2, so the first port P1 and the second port P2 are turned on, the transistor on-resistor Ron2 is equivalent to the load of the third port P3, and the transistor on-resistor Ron2 short-circuits the third port P3 to ground, so the first port P1 and the third port P3 are disconnected. At this time, the load of the first inductor L1 is equivalent to the transistor on-resistance Ron 3.
The second level is high, e.g. not 0. As will be understood from fig. 5, since the control port VC provides a high level, the control level of the first control circuit 110 is also a high level, and it can be understood by those skilled in the art that, according to the operation principle of the transistors, the first transistor M1 is turned on, at which time the first transistor M1 is equivalent to the transistor on resistor Ron1, and under the action of the inverter INV, the control level of the second control circuit 120 and the control level of the third control circuit 130 are low, and according to the operation principle of the transistors, the second transistor M2 and the third transistor M3 are turned off, at which time the second transistor M2 is equivalent to the transistor off capacitor Coff2, and the third transistor M3 is equivalent to the transistor off capacitor Coff 3. At this time, the transistor on-resistance Ron1 is equivalent to the load of the second port P2, the transistor on-resistance Ron1 shorts the second port P2 to the ground, so the first port P1 is disconnected from the second port P2, and the transistor off-capacitance Coff2 is equivalent to the load of the third port P3, so the first port P1 is connected to the third port P3. And, the load of the first inductor L1 at this time is equivalent to the transistor off capacitance Coff 3.
In this embodiment, the operating principle that the transistors are turned on or off at different levels is utilized, the level of the control port is controlled to provide the same control level as that of the control port for the transistor in the first control circuit, and the inverter is utilized to provide the control level opposite to that of the control port for the transistor in the second control circuit and the transistor in the third control circuit, so that switching between two operating states can be realized more simply and conveniently; meanwhile, a load switching technology is introduced into the input port, switching of different input loads is achieved according to different working states of transistors in the third control circuit, and low insertion loss is achieved in the two working states.
Compared with the first switch unit and the second switch unit in the millimeter wave switch filter device shown in fig. 1, the first switch unit and the second switch unit provided in the embodiment of the present invention can improve the isolation between the switch radio frequency signal and the control signal through the gate bias resistor of the transistor control circuit, and can reduce the resistance of the substrate of the transistor through the external resistor, so as to achieve the purpose of reducing the insertion loss, further ensure that the single-pole double-throw switch has the performance of smaller insertion loss and higher isolation in two working states, and can realize the good matching between the input port of the millimeter wave integrated circuit switch and the output of two ports.
In order to verify the working effect of the first switch unit and the second switch unit in the millimeter wave switch filter device provided by the embodiment of the present invention, the following description is made in conjunction with specific parameters of the first switch unit and the second switch unit and simulation results.
In an alternative embodiment, the first transistor M1 is composed of 6 groups of field effect transistors, each group of field effect transistors includes 32 channels, and the channel width is 1 μ M and the channel length is 40 nm; the second transistor M2 is composed of 6 groups of field effect transistors, each group of field effect transistors includes 32 channels, the width of the channel is 1 μ M, and the length of the channel is 40 nm; the third transistor M3 is composed of 9 groups of field effect transistors, and each group of field effect transistors includes 32 channels, and the channel width is 1 μ M and the channel length is 40 nm.
The first gate bias resistor R1, the second gate bias resistor R2 and the third gate bias resistor R3 all have a resistance of 3K Ω.
The resistances of the first external resistor Rsub1, the second external resistor Rsub2 and the third external resistor Rsub3 are all 6K Ω, and the capacitance of the bypass capacitor C1 is 40 fF.
For the first switch unit and the second switch unit of the above structural parameters, it is possible to implement: the application frequency band comprises 24 GHz-35 GHz. In an application frequency band, in the first switch unit or the second switch unit, the mismatching degree of the insertion loss of the input port and each output port is less than 0.24dB, the insertion loss of the input port and each output port is less than 2.2dB, and the isolation degree of the input port and each output port is greater than 23.2 dB.
It can be understood that the application frequency band selected by this simulation is 24GHz to 35GHz, because this frequency band is the main application frequency band of 5G communication at present.
Referring to fig. 6, fig. 6 is a diagram illustrating simulation results of a switch unit according to an embodiment of the present invention.
As can be readily seen from the simulation results of FIG. 6, the mismatch of the insertion loss of the first port P1 and the second port P2, i.e., S22(P1 to P2) and S11(P1 to P2), and the mismatch in insertion loss of the first port P1 and the third port P3, i.e., S33(P1 to P3) and S11(P1 to P3) are less than 0.24dB, and the insertion loss of the first port P1 and the second port P2 is S21(P1 to P2), and the insertion loss of the first port P1 and the third port P3, i.e., S31(P1 to P3), each less than 2.2dB, the isolation of the first port P1 from the second port P2, S32(P1 to P2), and the isolation of the first port P1 from the third port P3, i.e., S23(P1 to P3), all greater than 23.2 dB.
It should be noted that the configuration parameters in the first switch unit and the second switch unit provided in the embodiment of the present invention are not limited thereto, and those skilled in the art can think that the same effect can be achieved by using different configurations with different parameters according to different use conditions.
In this embodiment, the operating principle that the transistors are turned on or off at different levels is utilized, the level of the control port is controlled to provide the same control level as that of the control port for the transistor in the first control circuit, and the inverter is utilized to provide the control level opposite to that of the control port for the transistor in the second control circuit and the transistor in the third control circuit, so that switching between two operating states can be realized more simply and conveniently; meanwhile, a load switching technology is introduced into the input port, switching of different input loads is achieved according to different working states of transistors in the third control circuit, and low insertion loss is achieved in the two working states. And the isolation between the switch radio-frequency signal and the control signal can be improved through the grid bias resistor of the transistor control circuit, the resistance of the substrate of the transistor can be reduced through the external resistor, the purpose of reducing the insertion loss is achieved, the performance that the single-pole double-throw switch has smaller insertion loss and higher isolation in two working states is further ensured, and the good matching from the input port of the millimeter wave integrated circuit switch to the output of two ports can be realized.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A millimeter wave filter circuit, comprising:
the first switch unit is used for receiving radio frequency signals and comprises a transformer circuit and a transistor control circuit, wherein the transformer circuit is used for realizing port isolation, and a load is adjusted by using a load switching technology;
the filter is used for filtering the radio-frequency signal output by the first switch unit and outputting a filtered radio-frequency signal;
the second switch unit is used for receiving the filtered radio frequency signal, comprises a transformer circuit and a transistor control circuit, realizes port isolation by using the transformer circuit, and adjusts a load by using a load switching technology;
the detector is used for converting the radio frequency signal output by the second switching unit into an analog voltage signal;
an A/D converter for converting the analog voltage signal into a digital signal;
and the control module is used for receiving the digital signal and selecting the output port of the first switch unit and the input port of the second switch unit based on the digital signal.
2. The millimeter wave filter circuit of claim 1, wherein the first switch or the second switch further comprises: a first port (P1), a second port (P2), and a third port (P3); in the first switch unit, the first port (P1) is an input port, the second port (P2) and the third port (P3) are output ports, in the second switch unit, the second port (P2) and the third port (P3) are input ports, and the first port (P1) is an output port;
the transformer circuit comprises a Transformer (TF) consisting of a first inductor winding (L1) and a second inductor winding (L2), the transformer circuit being configured to isolate the first port (P1), the second port (P2) and the third port (P3);
the transistor control circuit includes a first control circuit, a second control circuit, and a third control circuit, the first inductor winding (L1) is connected between the first port (P1) and the third control circuit, the second inductor coil (L2) being connected between the second port (P2) and the third port (P3), the first control circuit is connected between the second port (P2) and the second control circuit, the second control circuit is connected between the third port (P3) and the first control circuit, the transistor control circuit realizes conduction of the first port (P1) and the second port (P2) based on a control level of the first control circuit and a control level of the second control circuit, or to achieve conduction between the first port (P1) and the third port (P3); the transistor control circuit controls a load of the first inductor (L1) based on a control level of the third control circuit.
3. The millimeter wave filter circuit according to claim 2, wherein the first switch unit or the second switch unit further comprises:
a control port (VC) connected to the first control circuit, the second control circuit, and the third control circuit, the control port (VC) configured to provide the transistor control circuit with a control level of the first control circuit, a control level of the second control circuit, and a control level of the third control circuit;
an Inverter (INV) for connecting the control port (VC) with the second control circuit, and the control port (VC) with the third control circuit.
4. The millimeter wave filter circuit according to claim 3, wherein the first control circuit comprises a first transistor (M1), a first gate bias resistor (R1), and a first external resistor (Rsub1) between the sources of the first transistor (M1), the first gate bias resistor (R1) is connected between the gate of the first transistor (M1) and the control port (VC), the drain of the first transistor (M1) is connected in parallel with the second port (P2), the source of the first transistor (M1) is grounded, one end of the first external resistor (Rsub1) is connected to the substrate of the first transistor (M1), and the other end of the first external resistor (Rsub1) is grounded.
5. The millimeter wave filter circuit according to claim 4, wherein the second control circuit comprises a second transistor (M2), a second gate bias resistor (R2), and a second external resistor (Rsub2) connected between the source of the second transistor (M2), the second gate bias resistor (R2) is connected between the gate of the second transistor (M2) and the output terminal of the Inverter (INV), the drain of the second transistor (M2) is connected in parallel with the third port (P3), the source of the second transistor (M2) is grounded, one end of the second external resistor (Rsub2) is connected with the substrate of the second transistor (M2), and the other end of the second external resistor (Rsub2) is grounded.
6. The millimeter wave filter circuit according to claim 5, wherein the third control circuit comprises a third transistor (M3), a third gate bias resistor (R3) and a third external resistor (Rsub3) between the sources of the third transistor (M3), the third gate bias resistor (R3) is connected between the gate of the third transistor (M3) and the output terminal of the Inverter (INV), the drain of the third transistor (M3) is connected to the first inductor (L1), the source of the third transistor (M3) is grounded, one end of the third external resistor (Rsub3) is connected to the substrate of the third transistor (M3), and the other end of the third external resistor (Rsub3) is grounded.
7. The millimeter wave filter circuit according to claim 6, wherein the control port (VC) provides a first level, the first transistor (M1) switch is off, the second transistor (M2) and the third transistor (M3) switch are on, the first port (P1) and the second port (P2) are on, and the first port (P1) and the third port (P3) are off.
8. The millimeter wave filter circuit according to claim 6, wherein the control port (VC) provides a second level, the first transistor (M1) switch is turned on, the second transistor (M2) and the third transistor (M3) switch are turned off, the first port (P1) is disconnected from the second port (P2), and the first port (P1) is turned on from the third port (P3).
9. The millimeter wave filter circuit according to claim 1, wherein the first switch unit or the second switch unit further comprises: a bypass capacitor (C1), wherein one end of the bypass capacitor (C1) is connected with the first inductance coil (L1), and the other end of the bypass capacitor (C1) is grounded.
10. The millimeter wave filter circuit according to claim 2, 7 or 8, wherein an application frequency band in which a mismatch degree of insertion loss between the input port and each output port in the first switch unit and the second switch unit is less than 0.24dB, an insertion loss between the input port and each output port is less than 2.2dB, and an isolation degree between the input port and each output port is greater than 23.2dB includes 24GHz to 35 GHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011192537.4A CN112491389A (en) | 2020-10-30 | 2020-10-30 | Millimeter wave filter circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011192537.4A CN112491389A (en) | 2020-10-30 | 2020-10-30 | Millimeter wave filter circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112491389A true CN112491389A (en) | 2021-03-12 |
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ID=74927607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011192537.4A Withdrawn CN112491389A (en) | 2020-10-30 | 2020-10-30 | Millimeter wave filter circuit |
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| Country | Link |
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| CN (1) | CN112491389A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116455420A (en) * | 2023-06-20 | 2023-07-18 | 中科海高(成都)电子技术有限公司 | Radio frequency control circuit, radio frequency transceiver and multichannel radio frequency transceiver system |
-
2020
- 2020-10-30 CN CN202011192537.4A patent/CN112491389A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116455420A (en) * | 2023-06-20 | 2023-07-18 | 中科海高(成都)电子技术有限公司 | Radio frequency control circuit, radio frequency transceiver and multichannel radio frequency transceiver system |
| CN116455420B (en) * | 2023-06-20 | 2023-09-19 | 中科海高(成都)电子技术有限公司 | Radio frequency control circuit, radio frequency transceiver and multichannel radio frequency transceiver system |
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Application publication date: 20210312 |