CN113162581A - Broadband digital phase shifter based on GaN HEMT device - Google Patents

Broadband digital phase shifter based on GaN HEMT device Download PDF

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CN113162581A
CN113162581A CN202110303439.1A CN202110303439A CN113162581A CN 113162581 A CN113162581 A CN 113162581A CN 202110303439 A CN202110303439 A CN 202110303439A CN 113162581 A CN113162581 A CN 113162581A
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gan hemt
phase shifter
switch
field effect
effect transistor
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CN113162581B (en
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谢媛媛
吴洪江
赵子润
刘文杰
王向玮
刘如青
魏洪涛
李远鹏
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CETC 13 Research Institute
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/16—Networks for phase shifting

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Abstract

The invention is suitable for the technical field of microwave monolithic integrated circuits, and provides a broadband digital phase shifter based on a GaN HEMT device, which comprises a 180-degree phase shifting unit, a 90-degree phase shifting unit, a 22.5-degree phase shifting unit, a 5.625-degree phase shifting unit, an 11.25-degree phase shifting unit and a 45-degree phase shifting unit which are sequentially cascaded; the 5.625-degree phase shifting unit is an optimized transmission type phase shifter structure, the 11.25-degree phase shifting unit and the 22.5-degree phase shifting unit are single-T-shaped high-low pass filter type phase shifter structures, and the 45-degree phase shifting unit, the 90-degree phase shifting unit and the 180-degree phase shifting unit are switch type high-low pass filter type phase shifter structures; the optimized transmission phase shifter structure comprises: transmission type phase shifter structure and GaN HEMT switch M4And an isolation resistor Rg4. The invention increases the number of the phase shifter bits, improves the precision of the phase shifter, reduces the chip area and is beneficial to reducing the cost.

Description

Broadband digital phase shifter based on GaN HEMT device
Technical Field
The invention belongs to the technical field of microwave monolithic integrated circuits and microelectronics, and particularly relates to a broadband digital phase shifter based on a GaN HEMT device.
Background
Since the 80 s in the 20 th century, the GaAs monolithic digital phase shifter is widely applied as a key device in systems such as radar, communication, navigation and the like. However, as modern radar, communication, navigation and other systems have higher requirements on high power, miniaturization, long-time work and complex working environment, the requirements on indexes such as power resistance of the monolithic digital phase shifter are also higher.
Wide bandgap semiconductor materials, represented by GaN, have a wider bandgap, a higher breakdown field, and a higher electron saturation velocity than most semiconductor materials. Gallium nitride high electron mobility field effect transistors (GaN HEMTs) have become the mainstream of high frequency, high power, high voltage devices, and their power capability is an order of magnitude higher than that of GaAs transistors.
However, at present, the number of bits of a GaN Microwave Integrated Circuit (MMIC) phase shifter with stronger power resistance is only 5 at most, the number of phase shifting bits is small, the phase shifting precision is not high, the chip area is too large, the chip cost is high, and meanwhile, the cost of components and systems is increased, and the GaN Microwave Integrated Circuit is not suitable for engineering application.
Disclosure of Invention
In view of this, the embodiment of the present invention provides a wideband digital phase shifter based on a GaN HEMT device, and aims to solve the problems of the GaN MMIC phase shifter in the prior art, such as less phase shifting bits, low phase shifting precision and large chip size.
To achieve the above object, a first aspect of the embodiments of the present invention provides a wideband digital phase shifter based on a GaN HEMT device, comprising: the device comprises a 180-degree phase shift unit, a 90-degree phase shift unit, a 22.5-degree phase shift unit, a 5.625-degree phase shift unit, an 11.25-degree phase shift unit and a 45-degree phase shift unit which are sequentially cascaded;
the 5.625-degree phase shifting unit is an optimized transmission type phase shifter structure, the 11.25-degree phase shifting unit and the 22.5-degree phase shifting unit are single-T-shaped high-low pass filter type phase shifter structures, and the 45-degree phase shifting unit, the 90-degree phase shifting unit and the 180-degree phase shifting unit are switch type high-low pass filter type phase shifter structures;
the optimized transmission phase shifter structure comprises: transmission type phase shifter structure and GaN HEMT switch M4And an isolation resistor Rg4；
A capacitor C in the transmission type phase shifter structure1And a resistance R1Is changed to a series connection, the GaN HEMT switch M4And the first and second terminals of the capacitor C1And the resistance R1The series circuit is connected in parallel, and the GaN HEMT switch M4And the third end of the resistor and the isolation resistor Rg4Is connected to the isolation resistor Rg4And the other end of the GaN HEMT switch M is used as a homodromous control end of the optimized transmission-type phase shifter structure, wherein the GaN HEMT switch M4The first end of (1) is a source/drain electrode, and the GaN HEMT switch M4The second terminal of (1) is a drain/source electrode, and the GaN HEMT switch M4The third terminal of the grid electrode is a grid electrode.
Optionally, the transmission phase shifter structure includes: microstrip line TL1Microstrip line TL2GaN HEMT switch M1GaN HEMT switch M2GaN HEMT switch M3Isolation resistor Rg1Isolation resistor Rg2Isolation resistor Rg3Capacitor C17And a capacitor C18；
The microstrip line TL1As the radio frequency input end of the transmission phase shifter structure, the microstrip line TL1And the other end of the capacitor C1And the resistance R1One end of the first parallel circuit is connected, and the other end of the first parallel circuit is connected with the microstrip line TL2The microstrip line TL2The other end of the transmission phase shifter is used as a radio frequency output end of the transmission phase shifter structure;
the GaN HEMT switch M1Is connected in parallel with the first parallel circuit to formA second parallel circuit, the GaN HEMT switch M1And the third end of the resistor and the isolation resistor Rg1Is connected to the isolation resistor Rg1The other end of the transmission phase shifter structure is used as a homodromous control end of the transmission phase shifter structure;
the isolation resistor Rg2As the same direction control end of the transmission phase shifter structure, and the isolation resistor Rg2The other end of the GaN HEMT switch M is connected with the GaN HEMT switch2The third terminal of the GaN HEMT switch M2Is connected to one end of the second parallel circuit, the GaN HEMT switch M2Is connected to the capacitor C17One terminal of said capacitor C17The other end of the first and second electrodes is grounded;
the isolation resistor Rg3As the same direction control end of the transmission phase shifter structure, and the isolation resistor Rg3The other end of the GaN HEMT switch M is connected with the GaN HEMT switch3The third terminal of the GaN HEMT switch M3Is connected to the other end of the second parallel circuit, the GaN HEMT switch M3Is connected to the capacitor C18One terminal of said capacitor C18The other end of the first and second electrodes is grounded;
the GaN HEMT switch M1First terminal of, the GaN HEMT switch M2First terminal of, the GaN HEMT switch M3The first end of (1) is a source/drain electrode, and the GaN HEMT switch M1Second terminal of, the GaN HEMT switch M2Second terminal of, the GaN HEMT switch M3The second terminal of (1) is a drain/source electrode, and the GaN HEMT switch M1Third terminal of, the GaN HEMT switch M2Third terminal of, the GaN HEMT switch M3The third end of the grid is a grid;
the optimized transmission phase shifter structure further comprises: open line TLO1And open line TLO2；
Said open line TLO1Instead of the said capacitor C17And a ground part, the open line TLO2Instead of the said capacitor C18And a ground portion.
Optionally, the single T-shaped heightPass filtering formula phase shifter structure includes: GaN HEMT switch M5GaN HEMT switch M6GaN HEMT switch M7Isolation resistor Rg5Isolation resistor Rg6Isolation resistor Rg7Resistance R2Capacitor C2Capacitor C3Inductor L1Inductor L2And an inductance L3；
The capacitor C2One end of the capacitor C is used as the radio frequency input end of the single T-shaped high-low pass filtering type phase shifter structure, and the capacitor C2Another end of the GaN HEMT switch M5Source/drain of, the inductance L1Are all connected;
the GaN HEMT switch M5And the isolation resistor Rg5Is connected to the isolation resistor Rg5The other end of the GaN HEMT switch M is used as a reverse control end of the single T-shaped high-low pass filtering type phase shifter structure5Drain/source of, the inductance L2And said capacitor C3Are all connected;
the capacitor C3The other end of the single T-shaped high-low pass filtering phase shifter structure is used as a radio frequency output end of the single T-shaped high-low pass filtering phase shifter structure;
the inductance L1Another end of (1), the inductance L2Another end of the GaN HEMT switch M6And the resistor R2Are all connected;
the GaN HEMT switch M6And the isolation resistor Rg6Is connected to the isolation resistor Rg6The other end of the GaN HEMT switch M is used as a reverse control end of the single T-shaped high-low pass filtering type phase shifter structure6Drain/source of, the resistor R2Another end of the GaN HEMT switch M7And said inductor L3Are all connected;
the GaN HEMT switch M7And the third end of the resistor and the isolation resistor Rg7Is connected to the isolation resistor Rg7The other end of the single T-shaped high-low pass filtering phase shifter structure is used as the same-direction control of the single T-shaped high-low pass filtering phase shifter structureEnd-to-end, the GaN HEMT switch M7And said inductor L3Is grounded, wherein the GaN HEMT switch M7The first end of (1) is a source/drain electrode, and the GaN HEMT switch M7The second terminal of (1) is a drain/source electrode, and the GaN HEMT switch M7The third terminal of the grid electrode is a grid electrode.
Optionally, the switch-type high-low pass filtering phase shifter structure includes: a five-stage switch type high-low pass filtering phase shifter structure and a high-stage switch type high-low pass filtering phase shifter structure;
the 45-degree phase shifting unit is of a five-step switch type high-low pass filtering phase shifter structure, and the 90-degree phase shifting unit and the 180-degree phase shifting unit are of high-order switch type high-low pass filtering phase shifter structures.
Optionally, the wideband digital phase shifter based on the GaN HEMT device further includes: a parallel driver;
the input end of each parallel driver is used for inputting control voltage, the output end of each parallel driver is correspondingly connected with the control end of one phase shifting unit of the 180-degree phase shifting unit, the 90-degree phase shifting unit, the 22.5-degree phase shifting unit, the 5.625-degree phase shifting unit, the 11.25-degree phase shifting unit and the 45-degree phase shifting unit and used for controlling the phase shifting of the corresponding phase shifting unit, and the power supply ends of all the parallel drivers are mutually connected and used for inputting power supply voltage.
Optionally, the parallel driver is a GaN one-bit parallel driver, and the GaN one-bit parallel driver includes: the input protection and level conversion circuit comprises an input protection and level conversion circuit, a second level conversion circuit, a first inverter circuit, a second inverter circuit and a third inverter circuit;
the input end of the input protection and level conversion circuit is used as the input end of the GaN one-bit parallel driver, and the output end of the input protection and level conversion circuit, the first input end of the first inverter circuit and the first input end of the second inverter circuit are connected;
the output end of the first inverter is connected with the first input end of the second level conversion circuit, the output end of the second level conversion circuit is connected with the first input end of the third inverter, and the output end of the third inverter is used as the homodromous output end of the GaN one-bit parallel driver;
the output end of the second inverter circuit is used as the reverse output end of the GaN one-bit parallel driver;
the second input end of the first inverter circuit, the second input end of the second level shift circuit and the second input end of the third inverter circuit are used as power supply ends of the GaN one-bit parallel driver.
Optionally, the first inverter circuit includes: field effect transistor T1Field effect transistor T4A voltage dividing resistor R4And a voltage dividing resistor R5；
The field effect transistor T1And the divider resistor R5Is connected as a first input terminal of the first inverter circuit, the field effect transistor T1The drain electrode of (1), the voltage dividing resistor R4And said field effect transistor T4The grid of the first inverter circuit is connected with the first voltage divider resistor R and then serves as the output end of the first inverter circuit4And the other end of the field effect transistor T4Of said field effect transistor T4The drain of (2) is grounded;
the voltage-dividing resistor R5The other end of which is taken as V of the first inverter circuitEEInput terminal, the field effect transistor T1As V of said first inverter circuitSSInput terminal, the field effect transistor T1Is further connected to a second input of the second inverter circuit, V of the first inverter circuitEEV of input terminal and the first inverter circuitSSThe input end is a second input end of the first inverter circuit.
Optionally, the second level shift circuit includes: diode D1Diode D2Field effect transistor T7And a voltage dividing resistor R7；
The diode D1As a first input terminal of the second level shifter circuit, the diode D1And the diode D2Of the diode D, the diode D2And said field effect transistor T7The drain electrode of the first level shifter circuit is connected with the first voltage source and then is used as the output end of the second level shifter circuit;
the field effect transistor T7And the divider resistor R7Is connected to one terminal of the field effect transistor T7And the divider resistor R7And the other end of the first level shifter circuit is connected to be used as a second input end of the second level shifter circuit.
Optionally, the third inverter circuit includes: field effect transistor T5Field effect transistor T6A voltage dividing resistor R6；
The field effect transistor T6As a first input terminal of the third inverter circuit;
the field effect transistor T6And the voltage dividing resistor R6Is connected with one end of the voltage dividing resistor R6And the other end of the field effect transistor T5Of said field effect transistor T5Is grounded, said field effect transistor T6And said field effect transistor T5The grid of the third inverter is connected with the first inverter and then used as the output end of the third inverter;
the field effect transistor T6As a second input terminal of said third inverter circuit.
Optionally, the second inverter circuit includes: field effect transistor T2Field effect transistor T3A voltage dividing resistor R3；
The field effect transistor T2As a first input terminal of the second inverter circuit;
the field effect transistor T2As a second input terminal of the second inverter circuit;
the field effect transistor T2And the voltage dividing resistor R3Is connected with one end of the voltage dividing resistor R3And the other end of the field effect transistor T3Of said field effect transistor T3Is grounded, said field effect transistor T3And the field effect transistor T2And the drain of the second inverter circuit is connected to serve as the output terminal of the second inverter circuit.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: compared with the prior art, the embodiment of the invention sequentially cascades the 180-degree phase shift unit, the 90-degree phase shift unit, the 22.5-degree phase shift unit, the 5.625-degree phase shift unit, the 11.25-degree phase shift unit and the 45-degree phase shift unit, different phase shift units adopt different phase shifter structures, and the structure of the 5.625-degree phase shift unit is optimized to form the six-bit GaN HEMT device-based broadband digital phase shifter, so that the number of bits of the phase shifter is increased, the precision of the phase shifter is improved, the chip area is reduced, the cost of the broadband digital phase shifter is reduced, and the popularization and application of the broadband digital phase shifter are accelerated.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a functional block diagram of a broadband digital phase shifter based on a GaN HEMT device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an optimized transmission phase shifter structure provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a transmission phase shifter structure according to an embodiment of the present invention;
FIG. 4 is a diagram of a single T-shaped high-low pass filtering phase shifter structure according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a five-stage switch-type high-low pass filter phase shifter structure according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a high-order switch-type high-low pass filtering phase shifter structure according to an embodiment of the present invention;
FIG. 7 is a block diagram of a GaN one-bit parallel driver according to an embodiment of the invention;
FIG. 8 is a circuit diagram of a GaN one-bit parallel driver according to an embodiment of the invention;
FIG. 9 is a circuit diagram of a GaN six-bit parallel driver according to an embodiment of the invention;
fig. 10 is a layout of a broadband digital phase shifter based on a GaN HEMT device according to an embodiment of the present invention;
fig. 11 is a 64-state input return loss test graph of a wideband digital phase shifter based on a GaN HEMT device according to an embodiment of the present invention;
fig. 12 is a 64-state output return loss test graph of a broadband digital phase shifter based on a GaN HEMT device according to an embodiment of the present invention;
fig. 13 is a 64-state insertion loss test graph of a broadband digital phase shifter based on a GaN HEMT device according to an embodiment of the present invention;
FIG. 14 is a graph of a fundamental phase shift test of a broadband digital phase shifter based on a GaN HEMT device provided by an embodiment of the invention;
FIG. 15 is a 64-state phase shift precision RMS error test curve for a broadband digital phase shifter based on a GaN HEMT device provided by an embodiment of the invention;
fig. 16 is a 64-state amplitude variation RMS error test plot for a broadband digital phase shifter based on a GaN HEMT device provided by embodiments of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a functional block diagram of a wideband digital phase shifter based on a GaN HEMT device according to an embodiment of the present invention, which is described in detail below.
A wideband digital phase shifter based on GaN HEMT devices may comprise: the phase-shifting unit comprises a 180-degree phase-shifting unit, a 90-degree phase-shifting unit, a 22.5-degree phase-shifting unit, a 5.625-degree phase-shifting unit, an 11.25-degree phase-shifting unit and a 45-degree phase-shifting unit which are sequentially cascaded.
The 5.625-degree phase shifting unit is an optimized transmission type phase shifter structure, the 11.25-degree phase shifting unit and the 22.5-degree phase shifting unit are single-T-shaped high-low pass filter type phase shifter structures, and the 45-degree phase shifting unit, the 90-degree phase shifting unit and the 180-degree phase shifting unit are switch type high-low pass filter type phase shifter structures.
Referring to fig. 2 and 3, an optimized transmission phase shifter structure may include: transmission type phase shifter structure and GaN HEMT switch M4And an isolation resistor Rg4；
Wherein, the optimized transmission phase shifter structure is used for transmitting the capacitor C in the phase shifter structure1And a resistance R1Is changed to a series connection, and a GaN HEMT switch M is switched4First and second terminals and a capacitor C1And a resistance R1The series circuit formed is connected in parallel, the GaN HEMT switch M4Third terminal and isolation resistor Rg4Is connected to an isolation resistor Rg4And the other end of the first transmission phase shifter serves as a homodromous control end of the optimized transmission phase shifter structure.
Wherein, GaN HEMT switch M4The first terminal of (1) is a source/drain electrode, and the GaN HEMT switch M4The second terminal of (1) is a drain/source, GaN HEMT switch M4The third end of the GaN HEMT is a grid when the GaN HEMT switch M4When the first end of (1) is a source electrode, the GaN HEMT switch M4The second terminal of the GaN HEMT is a drain electrode when the GaN HEMT switch M4When the first end of (1) is a drain electrode, the GaN HEMT switch M4The second terminal of (a) is a source.
In the embodiment of the invention, the phase-shifting unit is formed by a phase-shifting network consisting of a GaN HEMT switch device and a passive element, and the GaN HEMT switch is switched between a reference path and a phase-shifting path, so that microwave signals generate different phase shifts through different transmission paths, and the function of controlling the phase of the microwave signals is realized. In this embodiment, a 180 ° phase shift unit, a 90 ° phase shift unit, a 22.5 ° phase shift unit, a 5.625 ° phase shift unit, an 11.25 ° phase shift unit, and a 45 ° phase shift unit are sequentially cascaded, where the 5.625 ° phase shift unit adopts an optimized transmission phase shifter structure, the 11.25 ° phase shift unit and the 22.5 ° phase shift unit adopt a single T-type high-low pass filter phase shifter structure, the 45 ° phase shift unit, the 90 ° phase shift unit, and the 180 ° phase shift unit adopt a switch-type high-low pass filter phase shifter structure, 6 phase shift units are integrated on one chip, each phase shift unit respectively leads out a control line, when a control voltage is provided to the control lines according to a truth table of a broadband digital phase shifter, a phase shift of a certain bit can be added or removed, thereby realizing a function of minimum step 5.625 ° phase shift in a range of 0 to 360 °, increasing the number of phase shifters, improving the phase shifter accuracy, and simultaneously, through the cascade order of each phase shift unit and the structure of the optimized phase shift unit, the chip area is also reduced, the cost of the broadband digital phase shifter is favorably reduced, and the popularization and the application of the broadband digital phase shifter are accelerated.
Alternatively, referring to fig. 3, the transmission phase shifter structure may include: microstrip line TL1Microstrip line TL2GaN HEMT switch M1GaN HEMT switch M2GaN HEMT switch M3Isolation resistor Rg1Isolation resistor Rg2Isolation resistor Rg3Capacitor C17And a capacitor C18。
Wherein, the isolation resistance is usually larger than 1.5k omega, and plays a role of isolating the radio frequency signal.
Wherein, microstrip line TL1One end of the microstrip line TL is used as the radio frequency input end of the transmission type phase shifter structure1Another terminal of (1) and a capacitor C1And a resistance R1One end of the first parallel circuit is connected, and the other end of the first parallel circuit is connected with the microstrip line TL2One end of microstrip line TL2The other end of the same is used as the radio frequency of the transmission type phase shifter structureAnd (4) an output end.
GaN HEMT switch M1Are connected in parallel with the first parallel circuit to form a second parallel circuit, a GaN HEMT switch M1Third terminal and isolation resistor Rg1Is connected to an isolation resistor Rg1And the other end of the transmission phase shifter is used as a homodromous control end of the transmission phase shifter structure.
Isolation resistor Rg2One end of the isolating resistor R is used as the equidirectional control end of the transmission type phase shifter structureg2The other end of the switch is connected with a GaN HEMT switch M2Third terminal of (1), GaN HEMT switch M2Is connected to one end of the second parallel circuit, and a GaN HEMT switch M2Second terminal of the capacitor C17One terminal of (C), a capacitor17And the other end of the same is grounded.
Isolation resistor Rg3One end of the isolating resistor R is used as the equidirectional control end of the transmission type phase shifter structureg3The other end of the switch is connected with a GaN HEMT switch M3Third terminal of (1), GaN HEMT switch M3Is connected with the other end of the second parallel circuit, and a GaN HEMT switch M3Second terminal of the capacitor C18One terminal of (C), a capacitor18And the other end of the same is grounded.
GaN HEMT switch M1First terminal of, GaN HEMT switch M2First terminal of, GaN HEMT switch M3The first terminal of (1) is a source/drain electrode, and the GaN HEMT switch M1Second terminal, GaN HEMT switch M2Second terminal, GaN HEMT switch M3The second terminal of (1) is a drain/source, GaN HEMT switch M1Third terminal, GaN HEMT switch M2Third terminal, GaN HEMT switch M3The third terminal of the grid electrode is a grid electrode.
Wherein, the optimized transmission phase shifter structure may further include: open line TLO1And open line TLO2Open line TLO1Instead of a capacitor C17And a ground part, an open line TLO2Instead of a capacitor C18And a ground portion.
In this embodiment, the RF input end of the transmission phase shifter structure is RFinRadio frequency transmission also as optimized transmission phase shifter structureInput terminal RFinRF output of a transmission phase shifter structureoutRadio frequency output RF also as an optimized transmission phase shifter structureoutAnd on the basis of transmission phase shifter structure, the capacitor C in the transmission phase shifter structure is connected1And a resistance R1Is changed to a series connection and in the series connection of capacitors C1And a resistance R1Two ends of the GaN HEMT switch M are connected in parallel4Using open line TLO1Instead of a capacitor C17And a ground part using an open line TLO2Instead of a capacitor C18And a ground portion, VP1Is the control terminal of a 5.625 DEG phase shift unit, passes through VP1Different control voltages are input to control the 5.625-degree phase shifting unit, and the 5.625-degree phase shifting unit formed by the optimized transmission-type phase shifter structure of the embodiment has better broadband performance, higher phase shifting precision and smaller amplitude change.
Alternatively, referring to fig. 4, the single T-shaped high-low pass filtering phase shifter structure may include: GaN HEMT switch M5GaN HEMT switch M6GaN HEMT switch M7Isolation resistor Rg5Isolation resistor Rg6Isolation resistor Rg7Resistance R2Capacitor C2Capacitor C3Inductor L1Inductor L2And an inductance L3。
Wherein, the capacitor C2One end of the capacitor C is used as a radio frequency input end of a single T-shaped high-low pass filtering type phase shifter structure2Another end of (1), GaN HEMT switch M5Source/drain, inductance L1Are all connected.
GaN HEMT switch M5Gate and isolation resistor Rg5Is connected to an isolation resistor Rg5The other end of the phase shifter is used as a reverse control end of a single-T-shaped high-low pass filtering type phase shifter structure, and a GaN HEMT switch M5Drain/source, inductor L2One terminal of and a capacitor C3Are all connected.
Capacitor C3And the other end of the phase shifter is used as a radio frequency output end of the single T-shaped high-low pass filtering type phase shifter structure.
Inductor L1Another end of (1), inductance L2Another end of (1), GaN HEMT switch M6Source/drain and resistor R2Are all connected.
GaN HEMT switch M6Gate and isolation resistor Rg6Is connected to an isolation resistor Rg6The other end of the phase shifter is used as a reverse control end of a single-T-shaped high-low pass filtering type phase shifter structure, and a GaN HEMT switch M6Drain/source, resistance R2Another end of (1), GaN HEMT switch M7First terminal and inductance L3Are all connected.
GaN HEMT switch M7Third terminal and isolation resistor Rg7Is connected to an isolation resistor Rg7The other end of the GaN HEMT switch M is used as a homodromous control end of a single-T-shaped high-low pass filtering type phase shifter structure7Second terminal and inductance L3Are all grounded, wherein, the GaN HEMT switch M7The first terminal of (1) is a source/drain electrode, and the GaN HEMT switch M7The second terminal of (1) is a drain/source, GaN HEMT switch M7The third terminal of the grid electrode is a grid electrode.
In this embodiment, the 11.25 ° phase shift unit and the 22.5 ° phase shift unit adopt a single T-shaped high-low pass filtering phase shifter structure, VP2、VN2Can be used as a control end of an 11.25-degree phase shift unit, and can lead out V on another same single-T-shaped high-low pass filtering type phase shifter structureP3、VN3As a control terminal of a 22.5 DEG phase shift unit, wherein VP2、VP3Is a control terminal in the same direction, VN2、VN3For the reverse control end, compared with the traditional single-T-shaped high-low pass filtering phase shifter structure, the embodiment adds the filtering element C in the phase shifting network2、C3And in GaN HEMT switch M6Two ends of the adjusting resistor R are connected in parallel2Therefore, the 11.25-degree phase shift unit and the 22.5-degree phase shift unit have better broadband performance, more flat phase shift and smaller amplitude change.
Alternatively, referring to fig. 5 and 6, the switching type high-low pass filtering phase shifter structure may include: a five-stage switch type high-low pass filtering phase shifter structure and a high-stage switch type high-low pass filtering phase shifter structure.
The 45-degree phase shifting unit can adopt a five-order switch type high-low pass filtering phase shifter structure, and the 90-degree phase shifting unit and the 180-degree phase shifting unit can adopt a high-order switch type high-low pass filtering phase shifter structure.
As shown in fig. 5, VP4、VN4Can be used as a control terminal of a 45-degree phase shift unit, wherein M8、M9、M10、M11、M12、M13、M14、M15Is a GaN HEMT switch, Rg8、Rg9、Rg10、Rg11、Rg12、Rg13、Rg14、Rg15Is GaN HEMT switch grid externally connected with an isolation resistor C4、C5、C6、C7、C8Is the capacitance of the phase-shifting network, L4、L5、L6、L7、L8Is the inductance of the phase shifting network. The eight GaN HEMT switches are respectively combined into a single-pole double-throw switch at a radio frequency input end and a video output end and are used for selecting different paths; the phase shift network is divided into a high-pass network and a low-pass network, and both adopt a five-order filter.
As shown in FIG. 6, VP、VNCan be used as a control terminal of a 90 DEG phase shift unit or a 180 DEG phase shift unit, wherein VPIs a control terminal in the same direction, VNFor the reverse control end, M16、M17、M18、M19、M20、M21、M22、M23Is a GaN HEMT switch, Rg16、Rg17、Rg18、Rg19、Rg20、Rg21、Rg22、Rg23The GaN HEMT switch grid is externally connected with an isolation resistor; c9、C10、C11、C12、C13、C14、C15、C16Is the capacitance of the phase-shifting network, L9、L10、L11、L12、L13、L14、L15、L16Is the inductance of the phase shifting network. Eight GaN HEMT switches are respectively combined into one at the radio frequency input end and the video output endA single pole double throw switch for selecting different paths; the phase-shifting network is divided into a high-pass network and a low-pass network, wherein the high-pass network adopts a seven-order filter, and the low-pass network adopts a nine-order filter.
In the embodiment, LC lumped elements are adopted in the 45-degree phase shift unit, the 90-degree phase shift unit and the 180-degree phase shift unit, so that the circuit area is effectively reduced; because the filter order adopted in the circuit structure is more, the working bandwidth is effectively widened.
Optionally, referring to fig. 1, in order to facilitate connection with a computer signal interface and use, the wideband digital phase shifter based on the GaN HEMT device may further include: a parallel driver.
Wherein the input terminal V of each parallel driverT1、VT2、VT3、VT4、VT5、VT6The output end of each parallel driver is correspondingly connected with the control end of one of the 180-degree phase-shifting unit, the 90-degree phase-shifting unit, the 22.5-degree phase-shifting unit, the 5.625-degree phase-shifting unit, the 11.25-degree phase-shifting unit and the 45-degree phase-shifting unit and is used for controlling the phase shift of the corresponding phase-shifting unit, and the power supply ends V of all the parallel drivers are connected with the control end of the phase-shifting unitSSInterconnected, power supply terminals V of all parallel driversEEAre interconnected for inputting a supply voltage.
Alternatively, referring to fig. 7, the parallel driver is a GaN one-bit parallel driver, and the GaN one-bit parallel driver may include: the circuit comprises an input protection and level conversion circuit, a second level conversion circuit, a first inverter circuit, a second inverter circuit and a third inverter circuit.
Wherein, the input end of the input protection and level conversion circuit is used as the input end V of the GaN one-bit parallel driverINThe output end of the input protection and level conversion circuit, the first input end of the first inverter circuit and the first input end of the second inverter circuit are connected.
The output end of the first phase inverter is connected with the first input end of the second level conversion circuit, the output end of the second level conversion circuit is connected with the first input end of the third phase inverter, and the output end of the third phase inverter is used as the same-direction output of the GaN one-bit parallel driverTerminal VPP。
The output end of the second inverter circuit is used as the reverse output end V of the GaN one-bit parallel driverNN。
The second input end of the first phase inverter circuit, the second input end of the second level switching circuit and the second input end of the third phase inverter are used as power supply ends V of the GaN one-bit parallel driverSS、VEE。
In this embodiment, the input signal V is converted into the input signal V by the input protection and level conversion circuit and the second level conversion circuitINConverting into required level, performing logic operation by related inverter circuit, and converting into a pair of complementary levels VPPAnd VNNBy complementary levels VPPAnd VNNControlling the corresponding phase shift unit.
For example, referring to fig. 8, the input protection and level shift circuit may include: four diodes D3、D4、D5、D6And a voltage dividing resistor R5Are connected in series to form D3、D4、D5、D6D composed of anode end of diode string as input end of GaN one-bit parallel driver3、D4、D5、D6The cathode of the diode string, the first input end of the first inverter circuit and the first input end of the second inverter circuit are all connected. Input signal VINVia a series diode D3、D4、D5、D6And a voltage dividing resistor R14The desired level is obtained.
For example, referring to fig. 8, the first inverter circuit may include: field effect transistor T1Field effect transistor T4A voltage dividing resistor R4And a voltage dividing resistor R5。
Wherein the field effect transistor T1Grid and divider resistor R5One terminal of which is connected as a first input terminal of a first inverter circuit, a field effect transistor T1Drain electrode of (1), and voltage dividing resistor R4And a field effect transistor T4Grid electrode ofConnected to the output end of the first inverter circuit and used as a voltage dividing resistor R4And the other end of the first transistor and the field effect transistor T4Of the field effect transistor T4Is grounded.
Voltage dividing resistor R5The other end of which is used as V of the first inverter circuitEEInput terminal, field effect transistor T1As V of the first inverter circuitSSInput terminal, field effect transistor T1Is further connected to a second input terminal of a second inverter circuit, V of the first inverter circuitEEV of input terminal and first inverter circuitSSThe input terminal is a second input terminal of the first inverter circuit.
For example, the second level shift circuit may include: diode D1Diode D2Field effect transistor T7And a voltage dividing resistor R7。
Wherein, the diode D1As a first input terminal of the second level shifter circuit, a diode D1Cathode and diode D2Is connected to the anode of diode D2And field effect transistor T7And the drain of the second level shifter circuit is connected to serve as the output end of the second level shifter circuit.
Field effect transistor T7Source electrode and voltage dividing resistor R7Is connected to one terminal of a field effect transistor T7Grid and divider resistor R7And the other end of the first level shifter is connected to be used as a second input end of the second level shifter.
For example, the third inverter circuit may include: field effect transistor T5Field effect transistor T6A voltage dividing resistor R6。
Wherein the field effect transistor T6As a first input terminal of the third inverter circuit.
Field effect transistor T6Drain electrode and voltage dividing resistor R6Is connected with a voltage dividing resistor R6And the other end of the first transistor and the field effect transistor T5Of the field effect transistor T5Is grounded, field effect transistor T6And field effect transistor T5And the gate of the third inverter is connected to serve as the output terminal of the third inverter.
Field effect transistor T6As a second input terminal of the third inverter circuit.
For example, the second inverter circuit may include: field effect transistor T2Field effect transistor T3A voltage dividing resistor R3。
Wherein the field effect transistor T2As a first input terminal of the second inverter circuit.
Field effect transistor T2As a second input terminal of the second inverter circuit.
Field effect transistor T2Drain electrode and voltage dividing resistor R3Is connected with a voltage dividing resistor R3And the other end of the first transistor and the field effect transistor T3Of the field effect transistor T3Is grounded, field effect transistor T3Gate of and field effect transistor T2And the drain of the second inverter circuit is connected to serve as the output terminal of the second inverter circuit.
As shown in FIG. 1, in a broadband digital phase shifter with a working frequency of 8-12.5 GHz based on a GaN HEMT device, 6 phase shift units are cascaded from left to right in the order of a 180-degree phase shift unit, a 90-degree phase shift unit, a 22.5-degree phase shift unit, a 5.625-degree phase shift unit, an 11.25-degree phase shift unit and a 45-degree phase shift unit in the transmission direction of radio frequency input. Each phase shift unit corresponds to 1 GaN one-bit parallel driver, the 6 GaN one-bit parallel drivers have identical circuits, and the 6 one-bit parallel drivers form a six-bit parallel driver. Power supply voltage V input by power supply terminal of GaN one-bit parallel driver of the embodimentEEAnd VSSCan be-16V and-10V respectively, and when 0V is input to the input end of the GaN one-bit parallel driver, the output level V isPPis-10V, the output level VNNIs 0V; when 5V is input to the input end of the GaN one-bit parallel driver, the output level V isPPIs 0V, the output level VNNis-10V. Since the embodiment can input 0V/5V and output complementary level is 0V/-10V, the computer interface can be conveniently used. As shown in fig. 9Power supply end V of 6 GaN one-bit parallel driversSSThe ports are adjacently connected and lead out a total power line, a bonding pressure point and a power supply end VEEThe ports are adjacently connected and lead out a total power line and a bonding pressure point.
Input voltage V of GaN one-bit parallel driver5.625 DEG corresponding to 5.625 DEG phase shift unitINDenominated control voltage VT1Input voltage V of GaN one-bit parallel driver11.25 DEG corresponding to 11.25 DEG phase shift unitINDenominated control voltage VT2Similarly, the control voltages respectively corresponding to the GaN one-bit parallel Driver22.5 °, Driver45 °, Driver90 °, Driver180 °, GaN one-bit parallel Driver22.5 °, Driver45 °, Driver90 °, Driver180 ° for the 22.5 ° phase shift unit, the 45 ° phase shift unit, the 90 ° phase shift unit, and the 180 ° phase shift unit are respectively VT3、VT4、VT5、VT6。
Control voltage V of Driver5.625 DEGT1The corresponding same-direction output voltage port is VPP1Output voltage port V in the same directionPP1Control voltage V at the same direction end of 5.625 DEG phase shift unitP1And (4) connecting. Control voltage V of driver11.25 DEGT2The corresponding same-direction output voltage port is VPP2Reverse output voltage port VNN2Output voltage port V in the same directionPP2Control voltage V at the same direction end of 11.25 DEG phase shift unitP2Connecting, inverting output voltage port VNN2Control voltage V at reverse end of 11.25 degree phase shift unitN2And (4) connecting. Control voltage V of Driver22.5 DEGT3Corresponding unidirectional output voltage port VPP3Reverse output voltage port VNN3Output voltage port V in the same directionPP3Control voltage V at the same direction end of 22.5 DEG phase shift unitP3Connecting, inverting output voltage port VNN3Control voltage V at reverse end of 22.5 degree phase shift unitN3And (4) connecting. Driver45 DEG control voltage VT4Corresponding unidirectional output voltage port VPP4Reverse output voltage port VNN4Output voltage port V in the same directionPP4Control voltage V at positive end of 45-degree phase shift unitP4Connection, outputVoltage port VNN4Control voltage V at reverse end of phase shift unit of 45 DEGN4And (4) connecting. Driver90 DEG control voltage VT5Corresponding unidirectional output voltage port VPP5Reverse output voltage port VNN5Output voltage port V in the same directionPP5Control voltage V at the same direction end of 90-degree phase shift unitP5Connecting, inverting output voltage port VNN5Control voltage V at reverse end of 90-degree phase shift unitN5And (4) connecting. Driver180 DEG control voltage VT6Corresponding unidirectional output voltage port VPP6Reverse output voltage port VNN6Output voltage port V in the same directionPP6Control voltage V at the same direction end of 180-degree phase shift unitP6Connecting, inverting output voltage port VNN6Control voltage V at reverse end of 180-degree phase shift unitN6And (4) connecting.
In the present embodiment, the 6 phase shift units are cascaded in the order of 180 °, 90 °, 22.5 °, 5.625 °, 11.25 °, and 45 ° from left to right, and accordingly, for convenience of user use and enhancement of versatility of the wideband digital phase shifter, the 6 GaN one-bit parallel drivers are cascaded in the order of Driver180 °, Driver90 °, Driver45 °, Driver22.5 °, Driver11.25 °, and Driver5.625 ° from left to right, or the 6 GaN one-bit parallel drivers are cascaded in the order of Driver5.625 °, Driver11.25 °, Driver22.5 °, Driver45 °, Driver90 °, and Driver180 ° from left to right, each one-bit parallel Driver being connected to the corresponding phase shift unit.
The truth table of the wideband digital phase shifter is shown in table 1, where "0" indicates a low level of 0V and "1" indicates a high level of 5V. When the control lines are provided with control voltages according to a truth table, 6 phase shifting units can add or remove the phase shift of a certain bit, so that the phase shifting function of 5.625 degrees with minimum stepping in the range of 0-360 degrees is realized.
Table 1 phase shifter truth table
Figure BDA0002987177230000171
The input ends of the six GaN one-bit parallel drivers are control ends of a broadband digital phase shifter based on the GaN HEMT device. The control ports of the traditional six-bit phase shifter are more than ten, the high level of the control voltage is 0V, and the low level is-10V, so that the six-bit phase shifter is inconvenient to use. By integrating the parallel drivers on the chip, the number of the control ends is reduced from more than ten to six, so that the difficulty of chip assembly is reduced; and moreover, the high level 5V and the low level 0V of the control voltage are convenient for a computer interface to use.
Illustratively, the elements of the 180 ° phase shift unit, the 90 ° phase shift unit, the 22.5 ° phase shift unit, the 5.625 ° phase shift unit, the 11.25 ° phase shift unit, the 45 ° phase shift unit, and the six GaN one-bit parallel drivers are fabricated on the GaN substrate using thin film processes. The GaN HEMT microwave monolithic integrated circuit is manufactured by adopting a GaN HEMT microwave monolithic integrated circuit process technology. The main technological processes of the GaN technology are as follows: mesa isolation, ohmic contact, gate grooving and metallization, device passivation, metal stripping, air bridge preparation, back chemical thinning, through hole technology and the like. The GaN process line needs to be provided with a layout of the wideband digital phase shifter chip based on the GaN HEMT device as shown in fig. 10 before process processing is performed. The circuit structure of six phase shift units and the GaN one-bit parallel driver are utilized to design a circuit, parameters of components in the circuit are determined, and layout is carried out according to the 6 basic phase shift units, the 6 GaN one-bit parallel drivers and the connection relation among the components in the figure 1. A plurality of basic phase-shifting units with different phase shifts and parallel drivers are integrated on the same chip, all the basic phase-shifting unit circuits are connected in series, a control voltage port of each phase-shifting unit is connected with an output voltage port of a GaN one-bit parallel driver, and power lines of the GaN one-bit parallel driver are connected together. The GaN HEMT device is controlled by the voltage output by the six GaN one-bit parallel drivers, so that the switching of the phase shift state is realized. By comparing simulation performances of different cascading sequences of 6 phase shifting units of the GaN digital phase shifter and considering reduction of chip area, the GaN digital phase shifter is cascaded from left to right according to the sequence of a 180-degree phase shifting unit, a 90-degree phase shifting unit, a 22.5-degree phase shifting unit, a 5.625-degree phase shifting unit, an 11.25-degree phase shifting unit and a 45-degree phase shifting unit in a chip layout. The GaN one-bit parallel driver is laid out under the phase shift unit circuit, as shown in fig. 1, and each phase shift unit is connected with one parallel driver.
The broadband digital phase shifter based on the GaN HEMT device has 6 phase-shifting digits and minimum phase-shifting stepping of 5.625 degrees and is controlled by six voltage control ends. And (3) testing results: in the frequency range of 8-12.5 GHz and under a 64-state all-state, the input return loss is less than-14 dB, the output return loss is less than-16 dB, the phase-shifting RMS error is less than 2 degrees, the amplitude change RMS error is less than 0.5dB, and the insertion loss is less than 11 dB. At 10GHz frequency, P-1The input power is 33dBm, and the power endurance capacity reaches 38.5dBm (7W). Logic level 0V/5V control, driver current 15 mA. Chip size 5.05X 2.00mm2。
Fig. 11 to 16 are graphs showing main test performance of the wide-band digital phase shifter based on the GaN HEMT device according to the embodiment of the present invention.
Fig. 11 and 12 are full-state input-output return loss test results of a wide-band digital phase shifter based on GaN HEMT devices. The relative bandwidth of 8-12.5 GHz frequency is 0.439, and the relative bandwidth is more than 0.25 to be regarded as a broadband circuit. The 64-state input return loss of the broadband digital phase shifter based on the GaN HEMT device is less than-14 dB, the 64-state output return loss is less than-16 dB, and good input and output matching is achieved. Compared with the publicly reported X-waveband GaN high-power five-bit GaN MMIC phase shifter, the phase shifter has wider working frequency band and smaller return loss.
Fig. 13 is a result of an all-state insertion loss test of a broadband digital phase shifter based on a GaN HEMT device. In the frequency range of 8-12.5 GHz, the 64-state insertion loss of the broadband digital phase shifter based on the GaN HEMT device is less than 11dB, the low loss is realized, the insertion loss is equivalent to the publicly reported 32-state insertion loss of an X-waveband GaN high-power five-position GaN MMIC phase shifter, the working frequency is wider, the phase shifting position number is more, and the insertion loss performance is better.
Fig. 14 is a phase shift test result of 6 fundamental phase shift states (5.625 °, 11.25 °, 22.5 °, 45 °, 90 °, and 180 °) of a broadband digital phase shifter based on a GaN HEMT device. Is the difference obtained by subtracting the absolute phase shift of the zero state from the absolute phase shift of the fundamental phase-shifted state. In the frequency range of 8-12.5 GHz, the invention can realize the phase shift of 64 states with the minimum step of 5.625 degrees, and the phase shift of 6 basic phase shift states is relatively flat, which means that the broadband phase shift performance of the basic phase shift is better. Wherein, the phase shift error of the 22.5 degree phase shift state is less than 0.8 degree, which is much smaller than the phase shift error (about 5 degrees) of a 22.5 degree GaN monolithic phase shifter reported abroad.
FIG. 15 is a phase shift accuracy RMS error test result for a broadband digital phase shifter based on a GaN HEMT device. In the frequency range of 8-12.5 GHz, the phase-shifting precision RMS error is less than 2 degrees, which is 2.5 degrees smaller than the publicly reported phase-shifting precision RMS error of the X-waveband GaN high-power five-position GaN MMIC phase shifter, and the phase-shifting precision level is equivalent to that of the similar GaAs broadband digital phase shifter. It can be seen that the broadband phase shift performance of the present invention is very good.
Fig. 16 is a 64-state amplitude variation RMS error test result for a broadband digital phase shifter based on a GaN HEMT device. Within the frequency range of 8-12.5 GHz, the RMS error of 64-state amplitude change is less than 0.5dB, and is 0.1dB less than the RMS error of 32-state amplitude change of an X-band GaN high-power five-bit GaN MMIC phase shifter which is publicly reported. Therefore, the amplitude variation performance of the invention is better.
Compared with a GaAs digital phase shifter, the broadband digital phase shifter based on the GaN HEMT device has the advantages that the power resistance is improved by more than 30 times, and the main performance indexes such as return loss, insertion loss, phase shifting precision, amplitude change and the like and the chip size are comparable to those of the GaAs digital phase shifter. Parallel drivers are integrated on the chip, control voltage points are reduced from more than ten to 6 (each phase shift phase is controlled by one control voltage), and a logic level of 0V/5V is convenient for a computer interface to use, so that the parallel driver has wide application prospect in modern radar, communication, navigation and other systems.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.

Claims (10)

1. A broadband digital phase shifter based on GaN HEMT device, comprising: the device comprises a 180-degree phase shift unit, a 90-degree phase shift unit, a 22.5-degree phase shift unit, a 5.625-degree phase shift unit, an 11.25-degree phase shift unit and a 45-degree phase shift unit which are sequentially cascaded;
the 5.625-degree phase shifting unit is an optimized transmission type phase shifter structure, the 11.25-degree phase shifting unit and the 22.5-degree phase shifting unit are single-T-shaped high-low pass filter type phase shifter structures, and the 45-degree phase shifting unit, the 90-degree phase shifting unit and the 180-degree phase shifting unit are switch type high-low pass filter type phase shifter structures;
the optimized transmission phase shifter structure comprises: transmission type phase shifter structure and GaN HEMT switch M4And an isolation resistor Rg4；
A capacitor C in the transmission type phase shifter structure1And a resistance R1Is changed to a series connection, the GaN HEMT switch M4And the first and second terminals of the capacitor C1And the resistance R1The series circuit is connected in parallel, and the GaN HEMT switch M4And the third end of the resistor and the isolation resistor Rg4Is connected to the isolation resistor Rg4And the other end of the GaN HEMT switch M is used as a homodromous control end of the optimized transmission-type phase shifter structure, wherein the GaN HEMT switch M4The first end of (1) is a source/drain electrode, and the GaN HEMT switch M4The second terminal of (1) is a drain/source electrode, and the GaN HEMT switch M4The third terminal of the grid electrode is a grid electrode.
2. The GaN HEMT device-based wideband digital phase shifter of claim 1, wherein said transmission phase shifter structure comprises: microstrip line TL1Microstrip line TL2GaN HEMT switch M1GaN HEMT switch M2GaN HEMT switch M3Isolation resistor Rg1Isolation resistor Rg2Isolation resistor Rg3Capacitor C17And a capacitor C18；
The microstripLine TL1As the radio frequency input end of the transmission phase shifter structure, the microstrip line TL1And the other end of the capacitor C1And the resistance R1One end of the first parallel circuit is connected, and the other end of the first parallel circuit is connected with the microstrip line TL2The microstrip line TL2The other end of the transmission phase shifter is used as a radio frequency output end of the transmission phase shifter structure;
the GaN HEMT switch M1And a first terminal and a second terminal of the GaN HEMT switch M are connected in parallel with the first parallel circuit to form a second parallel circuit1And the third end of the resistor and the isolation resistor Rg1Is connected to the isolation resistor Rg1The other end of the transmission phase shifter structure is used as a homodromous control end of the transmission phase shifter structure;
the isolation resistor Rg2As the same direction control end of the transmission phase shifter structure, and the isolation resistor Rg2The other end of the GaN HEMT switch M is connected with the GaN HEMT switch2The third terminal of the GaN HEMT switch M2Is connected to one end of the second parallel circuit, the GaN HEMT switch M2Is connected to the capacitor C17One terminal of said capacitor C17The other end of the first and second electrodes is grounded;
the isolation resistor Rg3As the same direction control end of the transmission phase shifter structure, and the isolation resistor Rg3The other end of the GaN HEMT switch M is connected with the GaN HEMT switch3The third terminal of the GaN HEMT switch M3Is connected to the other end of the second parallel circuit, the GaN HEMT switch M3Is connected to the capacitor C18One terminal of said capacitor C18The other end of the first and second electrodes is grounded;
the GaN HEMT switch M1First terminal of, the GaN HEMT switch M2First terminal of, the GaN HEMT switch M3The first end of (1) is a source/drain electrode, and the GaN HEMT switch M1Second terminal of, the GaN HEMT switch M2Second terminal of, the GaN HEMT switch M3The second terminal of (1) is a drain/source electrode, the GaN HEMT switchM1Third terminal of, the GaN HEMT switch M2Third terminal of, the GaN HEMT switch M3The third end of the grid is a grid;
the optimized transmission phase shifter structure further comprises: open line TLO1And open line TLO2；
Said open line TLO1Instead of the said capacitor C17And a ground part, the open line TLO2Instead of the said capacitor C18And a ground portion.
3. The GaN HEMT device-based wideband digital phase shifter of claim 1, wherein said single T-shaped high-low pass filtered phase shifter structure comprises: GaN HEMT switch M5GaN HEMT switch M6GaN HEMT switch M7Isolation resistor Rg5Isolation resistor Rg6Isolation resistor Rg7Resistance R2Capacitor C2Capacitor C3Inductor L1Inductor L2And an inductance L3；
The capacitor C2One end of the capacitor C is used as the radio frequency input end of the single T-shaped high-low pass filtering type phase shifter structure, and the capacitor C2Another end of the GaN HEMT switch M5Source/drain of, the inductance L1Are all connected;
the GaN HEMT switch M5And the isolation resistor Rg5Is connected to the isolation resistor Rg5The other end of the GaN HEMT switch M is used as a reverse control end of the single T-shaped high-low pass filtering type phase shifter structure5Drain/source of, the inductance L2And said capacitor C3Are all connected;
the capacitor C3The other end of the single T-shaped high-low pass filtering phase shifter structure is used as a radio frequency output end of the single T-shaped high-low pass filtering phase shifter structure;
the inductance L1Another end of (1), the inductance L2Another end of the GaN HEMT switch M6And the resistor R2Are all connected;
the GaN HEMT switch M6And the isolation resistor Rg6Is connected to the isolation resistor Rg6The other end of the GaN HEMT switch M is used as a reverse control end of the single T-shaped high-low pass filtering type phase shifter structure6Drain/source of, the resistor R2Another end of the GaN HEMT switch M7And said inductor L3Are all connected;
the GaN HEMT switch M7And the third end of the resistor and the isolation resistor Rg7Is connected to the isolation resistor Rg7The other end of the GaN HEMT switch M is used as a homodromous control end of the single-T-shaped high-low pass filtering type phase shifter structure7And said inductor L3Is grounded, wherein the GaN HEMT switch M7The first end of (1) is a source/drain electrode, and the GaN HEMT switch M7The second terminal of (1) is a drain/source electrode, and the GaN HEMT switch M7The third terminal of the grid electrode is a grid electrode.
4. The GaN HEMT device-based wideband digital phase shifter of any of claims 1-3, wherein the switch-type high-low pass filtered phase shifter structure comprises: a five-stage switch type high-low pass filtering phase shifter structure and a high-stage switch type high-low pass filtering phase shifter structure;
the 45-degree phase shifting unit is of a five-step switch type high-low pass filtering phase shifter structure, and the 90-degree phase shifting unit and the 180-degree phase shifting unit are of high-order switch type high-low pass filtering phase shifter structures.
5. The GaN HEMT device-based broadband digital phase shifter of any of claims 1-3, further comprising: a parallel driver;
the input end of each parallel driver is used for inputting control voltage, the output end of each parallel driver is correspondingly connected with the control end of one phase shifting unit of the 180-degree phase shifting unit, the 90-degree phase shifting unit, the 22.5-degree phase shifting unit, the 5.625-degree phase shifting unit, the 11.25-degree phase shifting unit and the 45-degree phase shifting unit and used for controlling the phase shifting of the corresponding phase shifting unit, and the power supply ends of all the parallel drivers are mutually connected and used for inputting power supply voltage.
6. The GaN HEMT device-based wideband digital phase shifter of claim 5, wherein said parallel driver is a GaN one-bit parallel driver, said GaN one-bit parallel driver comprising: the input protection and level conversion circuit comprises an input protection and level conversion circuit, a second level conversion circuit, a first inverter circuit, a second inverter circuit and a third inverter circuit;
the input end of the input protection and level conversion circuit is used as the input end of the GaN one-bit parallel driver, and the output end of the input protection and level conversion circuit, the first input end of the first inverter circuit and the first input end of the second inverter circuit are connected;
the output end of the first inverter is connected with the first input end of the second level conversion circuit, the output end of the second level conversion circuit is connected with the first input end of the third inverter, and the output end of the third inverter is used as the homodromous output end of the GaN one-bit parallel driver;
the output end of the second inverter circuit is used as the reverse output end of the GaN one-bit parallel driver;
the second input end of the first inverter circuit, the second input end of the second level shift circuit and the second input end of the third inverter circuit are used as power supply ends of the GaN one-bit parallel driver.
7. The GaN HEMT device-based broadband digital phase shifter of claim 6, wherein the first inverter circuit comprises: field effect transistor T1Field effect transistor T4A voltage dividing resistor R4And a voltage dividing resistor R5；
The field effect transistor T1And the divider resistor R5One end of which is connected as the first of the first inverter circuitInput terminal, the field effect transistor T1The drain electrode of (1), the voltage dividing resistor R4And said field effect transistor T4The grid of the first inverter circuit is connected with the first voltage divider resistor R and then serves as the output end of the first inverter circuit4And the other end of the field effect transistor T4Of said field effect transistor T4The drain of (2) is grounded;
the voltage-dividing resistor R5The other end of which is taken as V of the first inverter circuitEEInput terminal, the field effect transistor T1As V of said first inverter circuitSSInput terminal, the field effect transistor T1Is further connected to a second input of the second inverter circuit, V of the first inverter circuitEEV of input terminal and the first inverter circuitSSThe input end is a second input end of the first inverter circuit.
8. The GaN HEMT device-based wideband digital phase shifter of claim 6, wherein said second level shifter circuit comprises: diode D1Diode D2Field effect transistor T7And a voltage dividing resistor R7；
The diode D1As a first input terminal of the second level shifter circuit, the diode D1And the diode D2Of the diode D, the diode D2And said field effect transistor T7The drain electrode of the first level shifter circuit is connected with the first voltage source and then is used as the output end of the second level shifter circuit;
the field effect transistor T7And the divider resistor R7Is connected to one terminal of the field effect transistor T7And the divider resistor R7And the other end of the first level shifter circuit is connected to be used as a second input end of the second level shifter circuit.
9. The GaN HEMT device-based broadband digital phase shifter of claim 6, wherein the third inverseThe phase device circuit includes: field effect transistor T5Field effect transistor T6A voltage dividing resistor R6；
The field effect transistor T6As a first input terminal of the third inverter circuit;
the field effect transistor T6And the voltage dividing resistor R6Is connected with one end of the voltage dividing resistor R6And the other end of the field effect transistor T5Of said field effect transistor T5Is grounded, said field effect transistor T6And said field effect transistor T5The grid of the third inverter is connected with the first inverter and then used as the output end of the third inverter;
the field effect transistor T6As a second input terminal of said third inverter circuit.
10. The GaN HEMT device-based wideband digital phase shifter according to any one of claims 6 to 9, wherein said second inverter circuit comprises: field effect transistor T2Field effect transistor T3A voltage dividing resistor R3；
The field effect transistor T2As a first input terminal of the second inverter circuit;
the field effect transistor T2As a second input terminal of the second inverter circuit;
the field effect transistor T2And the voltage dividing resistor R3Is connected with one end of the voltage dividing resistor R3And the other end of the field effect transistor T3Of said field effect transistor T3Is grounded, said field effect transistor T3And the field effect transistor T2And the drain of the second inverter circuit is connected to serve as the output terminal of the second inverter circuit.
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