CN110138357A - A kind of six bit digital phase shifter of Ku wave band CMOS - Google Patents

A kind of six bit digital phase shifter of Ku wave band CMOS Download PDF

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Publication number
CN110138357A
CN110138357A CN201910305350.1A CN201910305350A CN110138357A CN 110138357 A CN110138357 A CN 110138357A CN 201910305350 A CN201910305350 A CN 201910305350A CN 110138357 A CN110138357 A CN 110138357A
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China
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phase
field
effect tube
degree
shift
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Inventor
杜景超
刘志哲
曹玉雄
陈林辉
田帆
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Beijing Institute of Remote Sensing Equipment
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Beijing Institute of Remote Sensing Equipment
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Priority to CN201910305350.1A priority Critical patent/CN110138357A/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/16Networks for phase shifting

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Abstract

The invention discloses a kind of six bit digital phase shifters of Ku wave band CMOS comprising 5.625 degree of phase-shift circuits (1), 11.25 degree of phase-shift circuits (2), 22.5 degree of phase-shift circuits (3), 45 degree of phase-shift circuits (4), 90 degree of phase-shift circuits (5) and 180 degree phase-shift circuit;Foregoing circuit is successively connected in series, 5.625 degree of phase-shift circuit (1) output ends connect 11.25 degree of phase-shift circuit (2) input terminals, 11.25 degree of phase-shift circuit (2) output ends connect 22.5 degree of phase-shift circuit (3) input terminals, 22.5 degree of phase-shift circuit (3) output ends connect 45 degree of phase-shift circuit (4) input terminals, 45 degree of phase-shift circuit (4) output ends connect 90 degree of phase-shift circuit (5) input terminals, 90 degree of phase-shift circuit (5) output ends connect 180 degree phase-shift circuit (5) input terminal, phase shifting control end includes the first to the 6th control terminal (V1~V6), control circuit can cover 0-360 degree including first to hex inverter (INV1~INV6) phase shift range of the present invention, working band is wide, it is readily integrated into silicon base CMOS system In chip.

Description

A kind of six bit digital phase shifter of Ku wave band CMOS
Technical field
The present invention relates to a kind of frequency microwave technical field of integrated circuits more particularly to a kind of six bits of Ku wave band CMOS Digital phase shifter.
Background technique
Phase shifter is widely used in one of microwave communication, radar and measuring system signal control function module, mainly For changing the phase difference between input signal and output signal.The important devices of digital phase shifter especially active phased array, The function of electron beam scanning can be provided, and use passive structures, power consumption is extremely low.
Traditional Ku wave band CMOS passive phase shifter has following problems: 1, the frequency range parasitic parameter is affected, phase shifting accuracy It is low;2, phase shift range can not cover 0 degree to 360 degree;3, work belt width;4, more using inductance, chip area is big;5, every grade Circuit needs to provide positive and negative terminal control, and control terminal is more.
Summary of the invention
The purpose of the present invention is to provide a kind of phase shift ranges to cover 0 degree to 360 degree, and bandwidth of operation is wider, can cover Ku Wave band, area is smaller, the six bit digital phase shifter of high phase shifting accuracy being easily integrated into CMOS System on Chip/SoC.
A kind of six bit digital phase shifter of Ku wave band CMOS is proposed to this present invention comprising 5.625 degree of phase-shift circuits, 11.25 degree of phase-shift circuits, 22.5 degree of phase-shift circuits, 45 degree of phase-shift circuits, 90 degree of phase-shift circuits and 180 degree phase-shift circuit;It is above-mentioned Circuit is successively connected in series, and 5.625 degree of phase-shift circuit output ends connect 11.25 degree of phase-shift circuit input terminals, 11.25 degree of phase shifts Circuit output end connects 22.5 degree of phase-shift circuit input terminals, and 22.5 degree of phase-shift circuit output ends connect 45 degree of phase-shift circuit inputs End, 45 degree of phase-shift circuit output ends connect 90 degree of phase-shift circuit input terminals, 90 degree of phase-shift circuit output end connection 180 degree phase shift electricity Road input terminal;Phase shifting control end includes the first control terminal, the second control terminal, third control terminal, the 4th control terminal, the 5th control terminal With the 6th control terminal, control circuit includes the first phase inverter, the second phase inverter, third phase inverter, the 4th phase inverter, the 5th reverse phase Device and hex inverter.
Wherein, 5.625 degree of phase-shift circuits include the first field-effect tube, the second field-effect tube, the first microstrip line, the first electricity Hold, first resistor, second resistance, the first phase inverter;Described first capacitor one end and the first FET drain connect and compose letter Number input terminal, the first field-effect tube source electrode, the second FET drain, the first capacitor other end and the connection of first microstrip line one end Together, the first microstrip line other end constitutes signal output end, the connection of first resistor one end together with the second field-effect tube source electrode First fet gate, the first resistor other end connects the first control terminal, while connecting the first phase inverter anode, second resistance One end connects the second fet gate, and the other end connects the first phase inverter negative terminal;When the first control terminal voltage is set low, circuit Working condition is reference state, and the shutdown of the first field-effect tube, the second fet gate voltage control signal is by the first phase inverter Be after second resistance it is high, the second field-effect tube conducting, input radio frequency signal is passed through by first capacitor and the second field-effect tube, phase Position is advanced, phase of output signal X1i;When the first control terminal (V1) voltage sets high, circuit working state be phase shift state, first Field-effect tube conducting, the second fet gate voltage control signal is low, the second field-effect tube after phase inverter and resistance Shutdown, input radio frequency signal are passed through by the first field-effect tube and the first inductance, delayed phase, phase of output signal X1o;With reference to State and phase shift state phase difference are X1o-X1i=5.625 degree, to complete phase shift function.
Wherein, 11.25 degree of phase-shift circuits use the high Low-Pass Filter phase-shift circuit structure of bridge T-type, 11.25 degree of phase-shift circuits Including field third effect pipe, the 4th field-effect tube, the 5th field-effect tube, the first inductance, the second capacitor, the second microstrip line, third Microstrip line, 3rd resistor, the 4th resistance, the 5th resistance, the second phase inverter;The third FET drain and the second microstrip line One end, which links together, constitutes signal input part, and third field-effect tube source electrode and third microstrip line one end link together and constitute letter Number output end, the second microstrip line other end connects the third microstrip line other end, while connecting the 4th FET drain, and the 4th Effect pipe source electrode, the 5th FET drain, first inductance one end are connected together with second capacitor one end, and the first inductance is another End, the second capacitor other end, the 5th field-effect tube source electrode are connected to ground, the 5th resistance one end and the second phase inverter anode one simultaneously It rises and is connected to the second control terminal, the 5th resistance other end connects the 5th fet gate, and the 3rd resistor other end connects third Fet gate, 3rd resistor one end are connected to the second phase inverter negative terminal together with the 4th resistance one end, and the 4th resistance is another The 4th fet gate of end connection;When the second control terminal voltage is set low, circuit working state is reference state, third field-effect Pipe conducting, the 4th fet gate voltage are low, the 4th field-effect tube shutdown, the conducting of the 5th field-effect tube, output signal phase Position is X2i;When the second control terminal voltage sets high, circuit working state is phase shift state, the shutdown of third field-effect tube, the 4th effect Should pipe conducting, the 5th field-effect tube shutdown, phase of output signal X2o;Reference state and phase shift state phase difference are X2o-X2i= 11.25 degree, to complete phase shift function.
Wherein, 22.5 degree of phase-shift circuits and 45 degree of phase-shift circuit structures are identical as 11.25 degree of phase-shift circuit structures, have distinguished At 22.5 degree of phase shift functions and 45 degree of phase shift functions.
Wherein, 90 degree of phase-shift circuits use T-type or the high Low-Pass Filter phase-shift circuit structure of π type, 90 degree of phase-shift circuit packets Include the 12nd field-effect tube, the 13rd field-effect tube, the 14th field-effect tube, the 15th field-effect tube, the 16th field-effect tube, 17th field-effect tube, the 18th field-effect tube, the 19th field-effect tube, the 4th inductance, the 5th inductance, the 5th capacitor, the 6th Capacitor, the 7th capacitor, the 8th capacitor, twelfth resistor, thirteenth resistor, the 14th resistance, the 15th resistance, the 16th electricity Resistance, the 17th resistance, the 18th resistance, the 19th resistance, the 5th phase inverter.12nd FET drain and the 13rd FET drain, which links together, constitutes signal input part, and the 12nd field-effect tube source electrode connects the leakage of the 16th field-effect tube Pole, while the 5th capacitor one end is connected, the 5th capacitor other end connects the 6th capacitor one end, while connecting the 4th inductance one end, 4th inductance other end ground connection, the 6th capacitor the 14th field-effect tube source electrode of another termination, while connecting the 18th field-effect tube Drain electrode, the 14th FET drain and the 15th FET drain, which link together, constitutes signal output end, and the 13rd Effect pipe source electrode, the 7th capacitor one end, the 5th inductance one end are connect with the 17th FET drain, the 5th inductance other end, 8th capacitor one end, the 15th field-effect tube source electrode are connect with the 19th FET drain, the 7th capacitor other end, the 8th electricity Hold the other end, the 16th field-effect tube source electrode, the 17th field-effect tube source electrode, the 18th field-effect tube source electrode, the 19th effect Should pipe source grounding, twelfth resistor one terminate the 12nd fet gate, the 14th resistance one terminate the 14th effect Tube grid is answered, the 17th resistance one terminates the 17th fet gate, and the 19th resistance one terminates the 19th field-effect tube grid Pole, the twelfth resistor other end, the 14th resistance other end, the 17th resistance other end, the 19th resistance other end connection the Five phase inverter anodes, while the 5th control terminal is connected, thirteenth resistor one terminates the 13rd fet gate, the 15th resistance One the 15th fet gate of termination, the 16th resistance one terminate the 16th fet gate, the 18th resistance one termination 18th fet gate, the thirteenth resistor other end, the 15th resistance other end, the 16th resistance other end, the 18th The resistance other end connects the 5th phase inverter negative terminal.When the 5th control terminal voltage sets high, circuit working state is reference state, the tenth The conducting of two field-effect tube, the conducting of the 14th field-effect tube, the conducting of the 17th field-effect tube, the conducting of the 19th field-effect tube, the tenth The shutdown of three field-effect tube, the shutdown of the 15th field-effect tube, the shutdown of the 16th field-effect tube, the shutdown of the 18th field-effect tube, output Signal phase is X5i;When the 5th control terminal voltage is set low, circuit working state is phase shift state, and the 12nd field-effect tube turns off, The shutdown of 14th field-effect tube, the shutdown of the 17th field-effect tube, the shutdown of the 19th field-effect tube, the conducting of the 13rd field-effect tube, The conducting of 15th field-effect tube, the conducting of the 16th field-effect tube, the conducting of the 18th field-effect tube, phase of output signal X5o, ginseng It examines state and phase shift state phase difference is X5o-X5i=90 degree, to complete phase shift function.
Wherein, the 180 degree phase-shift circuit (6) uses T-type or the high Low-Pass Filter phase-shift circuit structure of π type, for completing 180 Spend phase shift.
After adopting the above technical scheme, the beneficial effects of the present invention are: using six number of bits word control circuits, phase shift model Can be covered by enclosing by 0 degree to 360 degree, and minimum phase shift stepping is 5.625 degree;5.625 degree of phase-shift circuit uses are inductively or capacitively in parallel The high Low-Pass Filter structure of switching mode, structure is simple, without inductance, 11.25 degree of phase-shift circuits, 22.5 degree of phase-shift circuits and 45 degree of phase shifts Circuit has all only used 1 inductance, and 90 degree of phase-shift circuits and 180 degree phase-shift circuit have all only used 2 inductance, integrated circuit electricity Feel less, area is smaller;Circuit structure of the invention has fully considered Ku wave band parasitic parameter, and working band is wider, phase shift essence Degree is high.Phase inverter is added in control circuit, and every grade of circuit only connects 1 control terminal, reduces control terminal quantity.
Detailed description of the invention
Fig. 1 is six bit digital phase shifter functional-block diagram of Ku wave band CMOS of the invention;
Fig. 2 is 5.625 degree of phase-shift circuit schematic illustrations in the present invention;
Fig. 3 is 11.25 degree of phase-shift circuit schematic illustrations in the present invention;
Fig. 4 is 90 degree of phase-shift circuit schematic illustrations in the present invention;
Fig. 5 is insertion loss simulation result diagram under 64 phase shift states of the invention;
Fig. 6 is that 64 phase shift states of the invention move down phase simulation result diagram.
1. 5.625 ° of 2. 11.25 ° of phase-shift circuit, 3. 22.5 ° of phase-shift circuit, 4. 45 ° of phase-shift circuits of phase-shift circuit 5. 90 ° of phase-shift circuits, 6. 180 ° of phase-shift circuits
Specific embodiment
Embodiments of the present invention are described in detail below in conjunction with attached drawing.
As shown in Figure 1, six bit numerical control phase shifter circuit of Ku wave band CMOS of the invention includes 5.625 degree of phase-shift circuits 1,11.25 degree of 2,22.5 degree of phase-shift circuit, 3,45 degree of phase-shift circuit phase-shift circuit, 4,90 degree of phase-shift circuits 5 and 180 degree phase-shift circuit 6.Circuit is connected in series, and 5.625 degree of 1 output ends of phase-shift circuit connect 11.25 degree of 2 input terminals of phase-shift circuit, 11.25 degree of phase shifts 2 output end of circuit connects 22.5 degree of 3 input terminals of phase-shift circuit, and it is defeated that 22.5 degree of 3 output ends of phase-shift circuit connect 45 degree of phase-shift circuits 5 Enter end, 45 degree of 5 output ends of phase-shift circuit connect 90 degree of 5 input terminals of phase-shift circuit, and 90 degree of 5 output ends of phase-shift circuit connect 180 degree 6 input terminal of phase-shift circuit.5.625 degree of 1 input terminals of phase-shift circuit are signal input part, and 6 output end of 180 degree phase-shift circuit is signal Output end, phase shifting control end are V1~V6, and control circuit includes 6 phase inverter INV1~INV6.
As shown in Fig. 2, 5.625 degree of phase-shift circuits 1 are using the inductively or capacitively high Low-Pass Filter phase-shift circuit knot of paralleling switch type Structure, including the first field-effect tube M1, the second field-effect tube M2, the first microstrip line W1, first capacitor C1, first resistor R1, second Resistance R2, the first phase inverter I1.The one end the first capacitor C1 and the first field-effect tube M1 drain electrode connect, and it is defeated to constitute signal together Enter end, the first field-effect tube M1 source electrode, the second field-effect tube M2 drain electrode, the first capacitor C1 other end and first one end microstrip line W1 It links together, the first microstrip line W1 other end constitutes signal output end, first resistor together with the second field-effect tube M2 source electrode The one end R1 connects the first field-effect tube M1 grid, and the first resistor R1 other end connects the first control terminal V1, while it is anti-to connect first Phase device INV1 anode, the one end second resistance R2 connect the second field-effect tube M2 grid, and it is negative that the other end connects the first phase inverter INV1 End.When the first control terminal V1 voltage is set low, circuit working state is reference state, the first field-effect tube M1 shutdown, first effect Should pipe M1 equivalent circuit be approximately tens kilohms of resistance, the second field-effect tube M2 Gate voltage control signals pass through first It is high, the second field-effect tube M2 conducting after phase inverter INV1 and second resistance R2, input radio frequency signal is by first capacitor C1 and the Two field-effect tube M2 pass through, and phase is advanced, phase of output signal X1i.When the first control terminal V1 voltage sets high, circuit work State is phase shift state, and the first field-effect tube M1 conducting, the second field-effect tube M2 Gate voltage control signals are by phase inverter and electricity Be after resistance it is low, the second field-effect tube M2 shutdown, the second field-effect tube M2 equivalent circuit is approximately tens kilohms of resistance, defeated Enter radiofrequency signal to be passed through by the first field-effect tube M1 and the first inductance L1, delayed phase, phase of output signal X1o.Reference state and Phase shift state phase difference is X1o-X1i=5.625 degree, to complete phase shift function.
As shown in figure 3,11.25 degree of phase-shift circuits use the high Low-Pass Filter phase-shift circuit structure of bridge T-type, 11.25 degree of phase shift electricity Road includes the field third effect pipe inductance of M3, the 4th field-effect tube M4, the 5th field-effect tube M5, first L1, the second capacitor C2, and second Microstrip line W2, third microstrip line W3,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, second phase inverter INV2.Described Three field-effect tube M3 drain electrode links together with second one end microstrip line W2 constitutes signal input part, third field-effect tube M3 source electrode It links together with the one end third microstrip line W3 and constitutes signal output end, the second microstrip line W2 other end connects third microstrip line W3 The other end, while the 4th field-effect tube M4 drain electrode is connected, the 4th field-effect tube M4 source electrode, the 5th field-effect tube M5 drain electrode, first The one end inductance L1 is connected together with second one end capacitor C2, the first inductance L1 other end, the second capacitor C2 other end, the 5th Effect pipe M5 source electrode is connected to ground simultaneously, and the 5th one end resistance R5 is connected to the second control together with the second phase inverter INV2 anode V2 is held, the 5th resistance R5 other end connects the 5th field-effect tube M5 grid, and the 3rd resistor R3 other end connects third field-effect tube M3 grid, the one end 3rd resistor R3 are connected to the second phase inverter INV2 negative terminal, the 4th resistance R4 together with the 4th one end resistance R4 The other end connects the 4th field-effect tube M4 grid.When the second control terminal V2 voltage is set low, circuit working state is reference state, the Three field-effect tube M3 conducting, the 4th field-effect tube M4 grid voltage are low, the 4th field-effect tube M4 shutdown, the 5th field-effect tube M5 Conducting, phase of output signal X2i.When the second control terminal V2 voltage sets high, circuit working state is phase shift state, third field effect Should pipe M3 shutdown, the 4th field-effect tube M4 conducting, the 5th field-effect tube M5 shutdown, phase of output signal X2o.Reference state and shifting Phase phase difference is X2o-X2i=11.25 degree, to complete phase shift function.22.5 degree of phase-shift circuits and 45 degree of phase-shift circuit structures It is identical as 11.25 degree of phase-shift circuit structures, it is respectively completed 22.5 degree of phase shift functions and 45 degree of phase shift functions.
As shown in figure 4,90 degree of phase-shift circuits use T-type or the high Low-Pass Filter phase-shift circuit structure of π type, 90 degree of phase-shift circuit packets Include the 12nd field-effect tube M12, the 13rd field-effect tube M13, the 14th field-effect tube M14, the 15th field-effect tube M15, the The 16 field-effect tube electricity of M16, the 17th field-effect tube M17, the 18th field-effect tube M18, the 19th field-effect tube M19, the 4th Feel L4, the 5th inductance L5, the 5th capacitor C5, the 6th capacitor C6, the 7th capacitor C7, the 8th capacitor C8, twelfth resistor R12, the The 13 resistance electricity of R13, the 14th resistance R14, the 15th resistance R15, the 16th resistance R16, the 17th resistance R17, the 18th Hinder R18, the 19th resistance R19, the 5th phase inverter INV5.The 12nd field-effect tube M12 drain electrode and the 13rd field-effect tube M13 drain electrode, which links together, constitutes signal input part, and the 12nd field-effect tube M12 source electrode connects the 16th field-effect tube M16 leakage Pole, while the 5th one end capacitor C5 is connected, the 5th capacitor C5 other end connects the 6th one end capacitor C6, while connecting the 4th inductance The one end L4, the 4th inductance L4 other end ground connection, the 6th capacitor C6 the 14th field-effect tube M14 source electrode of another termination connect simultaneously 18th field-effect tube M18 drain electrode, the 14th field-effect tube M14 drain electrode link together with the 15th field-effect tube M15 drain electrode Constitute signal output end, the 13rd field-effect tube M13 source electrode, the 7th one end capacitor C7, the 5th one end inductance L5 and the 17th Effect pipe M17 drain electrode connection, the 5th inductance L5 other end, the 8th one end capacitor C8, the 15th field-effect tube M15 source electrode and the tenth Nine field-effect tube M19 drain electrode connection, the 7th capacitor C7 other end, the 8th capacitor C8 other end, the 16th source field-effect tube M16 Pole, the 17th field-effect tube M17 source electrode, the 18th field-effect tube M18 source electrode, the 19th field-effect tube M19 source grounding, the 12 resistance R12 mono- terminate the 12nd field-effect tube M12 grid, and the 14th resistance R14 mono- terminates the 14th field-effect tube M14 grid Pole, the 17th resistance R17 mono- terminate the 17th field-effect tube M17 grid, and the 19th resistance R19 mono- terminates the 19th field-effect tube M19 grid, the twelfth resistor R12 other end, the 14th resistance R14 other end, the 17th resistance R17 other end, the 19th electricity It hinders the R19 other end and connects the 5th phase inverter INV5 anode, while connecting the 5th control terminal V5, the termination of thirteenth resistor R13 mono- the 13 field-effect tube M13 grids, the 15th resistance R15 mono- terminate the 15th field-effect tube M15 grid, the 16th resistance R16 mono- The 16th field-effect tube M16 grid is terminated, the 18th resistance R18 mono- terminates the 18th field-effect tube M18 grid, thirteenth resistor The R13 other end, the 15th resistance R15 other end, the 16th resistance R16 other end, the 18th resistance R18 other end connection the 5th Phase inverter INV5 negative terminal.When the 5th control terminal V5 voltage sets high, circuit working state is reference state, the 12nd field-effect tube M12 conducting, the 14th field-effect tube M14 conducting, the 17th field-effect tube M17 conducting, the 19th field-effect tube M19 conducting, the 13 field-effect tube M13 shutdown, the 15th field-effect tube M15 shutdown, the 16th field-effect tube M16 shutdown, the 18th field-effect Pipe M18 shutdown, phase of output signal X5i.When the 5th control terminal V5 voltage is set low, circuit working state be phase shift state, the tenth Two field-effect tube M12 shutdown, the 14th field-effect tube M14 shutdown, the 17th field-effect tube M17 shutdown, the 19th field-effect tube M19 shutdown, the 13rd field-effect tube M13 conducting, the 15th field-effect tube M15 conducting, the 16th field-effect tube M16 conducting, the 18 field-effect tube M18 conducting, phase of output signal X5o.Reference state and phase shift state phase difference are X5o-X5i=90 degree, thus Complete phase shift function.180 degree phase-shift circuit and 90 degree of phase-shift circuit structures are identical, can complete 180 degree phase shift function.
As shown in Figure 5 and Figure 6, according to simulation result, a kind of six bit digital phase shifter electricity of Ku wave band CMOS of the present invention Road phase shift in 14GHz to 18GHz working band can cover 0 degree to 360 degree, and for RMS phase shifting accuracy less than 4 °, insertion loss is small In 14.4dB.
Using six number of bits word control circuits, phase shift range can cover 0 degree to 360 degree, and minimum phase shift stepping is 5.625 degree;For 5.625 degree of phase-shift circuits using the inductively or capacitively high Low-Pass Filter structure of paralleling switch type, structure is simple, without electricity Sense, 11.25 degree of phase-shift circuits, 22.5 degree of phase-shift circuits and 45 degree of phase-shift circuits have all only used 1 inductance, 90 degree of phase-shift circuits 2 inductance are all only used with 180 degree phase-shift circuit, integrated circuit inductance is less, and area is smaller;Circuit structure of the invention fills Divide and consider Ku wave band parasitic parameter, working band is wider, and phase shifting accuracy is high.Phase inverter is added in control circuit, and every grade of circuit is only 1 control terminal is connected, control terminal quantity is reduced.

Claims (6)

1. a kind of six bit digital phase shifter of Ku wave band CMOS, which is characterized in that it include 5.625 degree of phase-shift circuits (1), 11.25 degree of phase-shift circuits (2), 22.5 degree of phase-shift circuits (3), 45 degree of phase-shift circuits (4), 90 degree of phase-shift circuits (5) and 180 degree are moved Circuitry phase;Foregoing circuit is successively connected in series, and 5.625 degree of phase-shift circuit (1) output ends connect 11.25 degree of phase-shift circuits (2) Input terminal, 11.25 degree of phase-shift circuit (2) output ends connect 22.5 degree of phase-shift circuit (3) input terminals, 22.5 degree of phase-shift circuits (3) Output end connects 45 degree of phase-shift circuit (4) input terminals, and 45 degree of phase-shift circuit (4) output ends connect 90 degree of phase-shift circuit (5) inputs End, 90 degree phase-shift circuit (5) output ends connect 180 degree phase-shift circuit (5) input terminals, phase shifting control end including the first control terminal, Second control terminal, third control terminal, the 4th control terminal, the 5th control terminal and the 6th control terminal (V1~V6), control circuit include First phase inverter, the second phase inverter, third phase inverter, the 4th phase inverter, the 5th phase inverter and hex inverter (INV1~ INV6)。
2. six bit digital phase shifter of Ku wave band CMOS according to claim 1, which is characterized in that 5.625 degree of phase shifts Circuit (1) includes the first field-effect tube (M1), the second field-effect tube (M2), the first microstrip line (W1), first capacitor (C1), and first Resistance (R1), second resistance (R2), the first phase inverter (I1);Described first capacitor one end (C1) and the first field-effect tube (M1) leak Pole connects and composes signal input part, and the first field-effect tube (M1) source electrode, the second field-effect tube (M2) drain electrode, first capacitor (C1) are another One end and the one end the first microstrip line (W1) link together, the first microstrip line (W1) other end and the second field-effect tube (M2) source electrode Signal output end is constituted together, and first resistor one end (R1) connects the first field-effect tube (M1) grid, and first resistor (R1) is another End connection the first control terminal (V1), while the first phase inverter (INV1) anode is connected, second resistance one end (R2) connects second Effect pipe (M2) grid, the other end connect the first phase inverter (INV1) negative terminal;When the first control terminal (V1) voltage is set low, circuit Working condition is reference state, the first field-effect tube (M1) shutdown, and the second field-effect tube (M2) Gate voltage control signals are by the One phase inverter (INV1) and second resistance (R2) are afterwards height, and the second field-effect tube (M2) conducting, input radio frequency signal is by the first electricity Hold (C1) and the second field-effect tube (M2) passes through, phase is advanced, phase of output signal X1i
When the first control terminal (V1) voltage sets high, circuit working state is phase shift state, and the first field-effect tube (M1) is connected, second Field-effect tube (M2) Gate voltage control signals are low, the second field-effect tube (M2) shutdown, input after phase inverter and resistance Radiofrequency signal is passed through by the first field-effect tube (M1) and the first inductance (L1), delayed phase, phase of output signal X1o;Reference state It is X with phase shift state phase difference1o-X1i=5.625 degree, to complete phase shift function.
3. six bit digital phase shifter of Ku wave band CMOS according to claim 1, which is characterized in that 11.25 degree of phase shifts Circuit (2) uses the high Low-Pass Filter phase-shift circuit structure of bridge T-type, and 11.25 degree of phase-shift circuits (2) include field third effect pipe (M3), the 4th field-effect tube (M4), the 5th field-effect tube (M5), the first inductance (L1), the second capacitor (C2), the second microstrip line (W2), third microstrip line (W3), 3rd resistor (R3), the 4th resistance (R4), the 5th resistance (R5), the second phase inverter (INV2); Third field-effect tube (M3) drain electrode links together with the one end the second microstrip line (W2) constitutes signal input part, third field effect (M3) source electrode should be managed and the one end third microstrip line (W3) links together and constitutes signal output end, the second microstrip line (W2) other end Third microstrip line (W3) other end is connected, while connecting the drain electrode of the 4th field-effect tube (M4), the 4th field-effect tube (M4) source electrode, the Five field-effect tube (M5) drain electrode, the first inductance one end (L1) are connected together with the one end the second capacitor (C2), the first inductance (L1) The other end, the second capacitor (C2) other end, the 5th field-effect tube M5 source electrode are connected to ground, the 5th resistance one end (R5) and the simultaneously Two phase inverters (INV2) anode is connected to the second control terminal (V2) together, and the 5th resistance (R5) other end connects the 5th field-effect tube (M5) grid, 3rd resistor (R3) other end connect third field-effect tube (M3) grid, 3rd resistor one end (R3) and the 4th electricity Resistance one end (R4) is connected to the second phase inverter (INV2) negative terminal together, and the 4th resistance (R4) other end connects the 4th field-effect tube (M4) grid.When the second control terminal (V2) voltage is set low, circuit working state is reference state, and third field-effect tube (M3) is led Logical, the 4th field-effect tube (M4) grid voltage is low, the 4th field-effect tube (M4) shutdown, and the conducting of the 5th field-effect tube (M5) is defeated Signal phase is X out2i
When the second control terminal (V2) voltage sets high, circuit working state is phase shift state, and third field-effect tube (M3) turns off, the 4th Field-effect tube (M4) conducting, the shutdown of the 5th field-effect tube (M5), phase of output signal X2o, reference state and phase shift state phase difference are X2o-X2i=11.25 degree, to complete phase shift function.
4. six bit digital phase shifter of Ku wave band CMOS according to claim 3, which is characterized in that 22.5 degree of phase shift electricity Road and 45 degree of phase-shift circuit structures are identical as 11.25 degree of phase-shift circuit structures, are respectively completed 22.5 degree of phase shift functions and 45 degree of shiftings Phase function.
5. six bit digital phase shifter of Ku wave band CMOS according to claim 1, which is characterized in that 90 degree of phase-shift circuits Using T-type or the high Low-Pass Filter phase-shift circuit structure of π type, 90 degree of phase-shift circuits include the 12nd field-effect tube (M12), and the tenth Three field-effect tube (M13), the 14th field-effect tube (M14), the 15th field-effect tube (M15), the 16th field-effect tube (M16), 17th field-effect tube (M17), the 18th field-effect tube (M18), the 19th field-effect tube (M19), the 4th inductance (L4), the 5th Inductance (L5), the 5th capacitor (C5), the 6th capacitor (C6), the 7th capacitor (C7), the 8th capacitor (C8), twelfth resistor (R12), Thirteenth resistor (R13), the 14th resistance (R14), the 15th resistance (R15), the 16th resistance (R16), the 17th resistance (R17), the 18th resistance (R18), the 19th resistance (R19), the 5th phase inverter (INV5);12nd field-effect tube (M12) drain electrode links together with the drain electrode of the 13rd field-effect tube (M13) and constitutes signal input part, the 12nd field-effect tube (M12) source electrode connects the drain electrode of the 16th field-effect tube (M16), while connecting the 5th one end capacitor (C5), and the 5th capacitor (C5) is another One end connects the 6th one end capacitor (C6), while connecting the 4th one end inductance (L4), the 4th inductance (L4) other end ground connection, and the 6th Capacitor (C6) the 14th field-effect tube (M14) source electrode of another termination, while the drain electrode of the 18th field-effect tube (M18) is connected, the tenth Four field-effect tube (M14) drain electrode links together with the drain electrode of the 15th field-effect tube (M15) and constitutes signal output end, and the 13rd Effect pipe (M13) source electrode, the 7th one end capacitor (C7), the 5th inductance one end (L5) and the drain electrode of the 17th field-effect tube (M17) connect It connects, the 5th inductance (L5) other end, the 8th one end capacitor (C8), the 15th field-effect tube (M15) source electrode and the 19th field-effect Manage (M19) drain electrode connection, the 7th capacitor (C7) other end, the 8th capacitor (C8) other end, the 16th source field-effect tube (M16) Pole, the 17th field-effect tube (M17) source electrode, the 18th field-effect tube (M18) source electrode, the 19th field-effect tube (M19) source electrode are equal Ground connection, twelfth resistor (R12) one terminate the 12nd field-effect tube (M12) grid, the 14th resistance (R14) one termination the 14th Field-effect tube (M14) grid, the 17th resistance (R17) one terminate the 17th field-effect tube (M17) grid, the 19th resistance (R19) the 19th field-effect tube (M19) grid of termination, twelfth resistor (R12) other end, the 14th resistance (R14) are another End, the 17th resistance (R17) other end, the 19th resistance (R19) other end connect the 5th phase inverter (INV5) anode, connect simultaneously The 5th control terminal (V5) is connect, thirteenth resistor (R13) one terminates the 13rd field-effect tube (M13) grid, the 15th resistance (R15) One the 15th field-effect tube (M15) grid of termination, the 16th resistance (R16) one terminate the 16th field-effect tube (M16) grid, the 18 resistance (R18) one terminate the 18th field-effect tube (M18) grid, thirteenth resistor (R13) other end, the 15th resistance (R15) other end, the 16th resistance (R16) other end, the 18th resistance (R18) other end connect the 5th phase inverter INV5 and bear End;When the 5th control terminal (V5) voltage sets high, circuit working state is reference state, and the 12nd field-effect tube (M12) is connected, the 14 field-effect tube (M14) conducting, the conducting of the 17th field-effect tube (M17), the conducting of the 19th field-effect tube (M19), the 13rd Field-effect tube (M13) shutdown, the shutdown of the 15th field-effect tube (M15), the shutdown of the 16th field-effect tube (M16), the 18th effect (M18) shutdown, phase of output signal X should be managed5i
When the 5th control terminal (V5) voltage is set low, circuit working state is phase shift state, and the 12nd field-effect tube (M12) turns off, The shutdown of 14th field-effect tube (M14), the shutdown of the 17th field-effect tube (M17), the shutdown of the 19th field-effect tube (M19), the tenth Three field-effect tube (M13) conducting, the conducting of the 15th field-effect tube (M15), the conducting of the 16th field-effect tube (M16), the 18th Effect pipe (M18) conducting, phase of output signal X5o, reference state and phase shift state phase difference are X5o-X5i=90 degree, to complete Phase shift function.
6. six bit digital phase shifter of Ku wave band CMOS according to claim 5, which is characterized in that the 180 degree is moved Circuitry phase (6) uses T-type or the high Low-Pass Filter phase-shift circuit structure of π type, for completing 180 degree phase shift.
CN201910305350.1A 2019-04-16 2019-04-16 A kind of six bit digital phase shifter of Ku wave band CMOS Pending CN110138357A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854482A (en) * 2019-11-22 2020-02-28 南京汇君半导体科技有限公司 High-frequency switch type phase shifter
CN113162581A (en) * 2021-03-22 2021-07-23 中国电子科技集团公司第十三研究所 Broadband digital phase shifter based on GaN HEMT device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050280461A1 (en) * 2004-06-21 2005-12-22 Oki Electric Industry Co., Ltd. Level shifter circuit with stress test function
CN102148416A (en) * 2010-11-24 2011-08-10 南京理工大学 Microwave and millimeter wave ultra wide band six-bit microwave monolithic integrated circuit (MMIC) digital phase shifter
CN202839906U (en) * 2012-09-26 2013-03-27 成都嘉纳海威科技有限责任公司 Microwave single-chip microcomputer numerical control phase shifter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050280461A1 (en) * 2004-06-21 2005-12-22 Oki Electric Industry Co., Ltd. Level shifter circuit with stress test function
CN102148416A (en) * 2010-11-24 2011-08-10 南京理工大学 Microwave and millimeter wave ultra wide band six-bit microwave monolithic integrated circuit (MMIC) digital phase shifter
CN202839906U (en) * 2012-09-26 2013-03-27 成都嘉纳海威科技有限责任公司 Microwave single-chip microcomputer numerical control phase shifter

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
刘石生等: "一种高精度宽带幅相控制多功能MMIC", 《固体电子学研究与进展》 *
李健康等: "Ku波段SiGe幅相多功能芯片设计", 《固体电子学研究与进展》 *
赵世巍等: "一种新型的六位数字移相器的设计", 《电子测量与仪器学报》 *
马凯文: "基于SiGe工艺的微波数控移相器芯片及SoC研究", 《中国优秀硕士学位论文全文数据库 信息科技》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854482A (en) * 2019-11-22 2020-02-28 南京汇君半导体科技有限公司 High-frequency switch type phase shifter
WO2021098195A1 (en) * 2019-11-22 2021-05-27 南京汇君半导体科技有限公司 High-frequency switch-type phase shifter
CN113162581A (en) * 2021-03-22 2021-07-23 中国电子科技集团公司第十三研究所 Broadband digital phase shifter based on GaN HEMT device
CN113162581B (en) * 2021-03-22 2022-08-05 中国电子科技集团公司第十三研究所 Broadband digital phase shifter based on GaN HEMT device

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