CN110138357A - A kind of six bit digital phase shifter of Ku wave band CMOS - Google Patents
A kind of six bit digital phase shifter of Ku wave band CMOS Download PDFInfo
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- CN110138357A CN110138357A CN201910305350.1A CN201910305350A CN110138357A CN 110138357 A CN110138357 A CN 110138357A CN 201910305350 A CN201910305350 A CN 201910305350A CN 110138357 A CN110138357 A CN 110138357A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/16—Networks for phase shifting
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Abstract
The invention discloses a kind of six bit digital phase shifters of Ku wave band CMOS comprising 5.625 degree of phase-shift circuits (1), 11.25 degree of phase-shift circuits (2), 22.5 degree of phase-shift circuits (3), 45 degree of phase-shift circuits (4), 90 degree of phase-shift circuits (5) and 180 degree phase-shift circuit;Foregoing circuit is successively connected in series, 5.625 degree of phase-shift circuit (1) output ends connect 11.25 degree of phase-shift circuit (2) input terminals, 11.25 degree of phase-shift circuit (2) output ends connect 22.5 degree of phase-shift circuit (3) input terminals, 22.5 degree of phase-shift circuit (3) output ends connect 45 degree of phase-shift circuit (4) input terminals, 45 degree of phase-shift circuit (4) output ends connect 90 degree of phase-shift circuit (5) input terminals, 90 degree of phase-shift circuit (5) output ends connect 180 degree phase-shift circuit (5) input terminal, phase shifting control end includes the first to the 6th control terminal (V1~V6), control circuit can cover 0-360 degree including first to hex inverter (INV1~INV6) phase shift range of the present invention, working band is wide, it is readily integrated into silicon base CMOS system In chip.
Description
Technical field
The present invention relates to a kind of frequency microwave technical field of integrated circuits more particularly to a kind of six bits of Ku wave band CMOS
Digital phase shifter.
Background technique
Phase shifter is widely used in one of microwave communication, radar and measuring system signal control function module, mainly
For changing the phase difference between input signal and output signal.The important devices of digital phase shifter especially active phased array,
The function of electron beam scanning can be provided, and use passive structures, power consumption is extremely low.
Traditional Ku wave band CMOS passive phase shifter has following problems: 1, the frequency range parasitic parameter is affected, phase shifting accuracy
It is low;2, phase shift range can not cover 0 degree to 360 degree;3, work belt width;4, more using inductance, chip area is big;5, every grade
Circuit needs to provide positive and negative terminal control, and control terminal is more.
Summary of the invention
The purpose of the present invention is to provide a kind of phase shift ranges to cover 0 degree to 360 degree, and bandwidth of operation is wider, can cover Ku
Wave band, area is smaller, the six bit digital phase shifter of high phase shifting accuracy being easily integrated into CMOS System on Chip/SoC.
A kind of six bit digital phase shifter of Ku wave band CMOS is proposed to this present invention comprising 5.625 degree of phase-shift circuits,
11.25 degree of phase-shift circuits, 22.5 degree of phase-shift circuits, 45 degree of phase-shift circuits, 90 degree of phase-shift circuits and 180 degree phase-shift circuit;It is above-mentioned
Circuit is successively connected in series, and 5.625 degree of phase-shift circuit output ends connect 11.25 degree of phase-shift circuit input terminals, 11.25 degree of phase shifts
Circuit output end connects 22.5 degree of phase-shift circuit input terminals, and 22.5 degree of phase-shift circuit output ends connect 45 degree of phase-shift circuit inputs
End, 45 degree of phase-shift circuit output ends connect 90 degree of phase-shift circuit input terminals, 90 degree of phase-shift circuit output end connection 180 degree phase shift electricity
Road input terminal;Phase shifting control end includes the first control terminal, the second control terminal, third control terminal, the 4th control terminal, the 5th control terminal
With the 6th control terminal, control circuit includes the first phase inverter, the second phase inverter, third phase inverter, the 4th phase inverter, the 5th reverse phase
Device and hex inverter.
Wherein, 5.625 degree of phase-shift circuits include the first field-effect tube, the second field-effect tube, the first microstrip line, the first electricity
Hold, first resistor, second resistance, the first phase inverter;Described first capacitor one end and the first FET drain connect and compose letter
Number input terminal, the first field-effect tube source electrode, the second FET drain, the first capacitor other end and the connection of first microstrip line one end
Together, the first microstrip line other end constitutes signal output end, the connection of first resistor one end together with the second field-effect tube source electrode
First fet gate, the first resistor other end connects the first control terminal, while connecting the first phase inverter anode, second resistance
One end connects the second fet gate, and the other end connects the first phase inverter negative terminal;When the first control terminal voltage is set low, circuit
Working condition is reference state, and the shutdown of the first field-effect tube, the second fet gate voltage control signal is by the first phase inverter
Be after second resistance it is high, the second field-effect tube conducting, input radio frequency signal is passed through by first capacitor and the second field-effect tube, phase
Position is advanced, phase of output signal X1i;When the first control terminal (V1) voltage sets high, circuit working state be phase shift state, first
Field-effect tube conducting, the second fet gate voltage control signal is low, the second field-effect tube after phase inverter and resistance
Shutdown, input radio frequency signal are passed through by the first field-effect tube and the first inductance, delayed phase, phase of output signal X1o;With reference to
State and phase shift state phase difference are X1o-X1i=5.625 degree, to complete phase shift function.
Wherein, 11.25 degree of phase-shift circuits use the high Low-Pass Filter phase-shift circuit structure of bridge T-type, 11.25 degree of phase-shift circuits
Including field third effect pipe, the 4th field-effect tube, the 5th field-effect tube, the first inductance, the second capacitor, the second microstrip line, third
Microstrip line, 3rd resistor, the 4th resistance, the 5th resistance, the second phase inverter;The third FET drain and the second microstrip line
One end, which links together, constitutes signal input part, and third field-effect tube source electrode and third microstrip line one end link together and constitute letter
Number output end, the second microstrip line other end connects the third microstrip line other end, while connecting the 4th FET drain, and the 4th
Effect pipe source electrode, the 5th FET drain, first inductance one end are connected together with second capacitor one end, and the first inductance is another
End, the second capacitor other end, the 5th field-effect tube source electrode are connected to ground, the 5th resistance one end and the second phase inverter anode one simultaneously
It rises and is connected to the second control terminal, the 5th resistance other end connects the 5th fet gate, and the 3rd resistor other end connects third
Fet gate, 3rd resistor one end are connected to the second phase inverter negative terminal together with the 4th resistance one end, and the 4th resistance is another
The 4th fet gate of end connection;When the second control terminal voltage is set low, circuit working state is reference state, third field-effect
Pipe conducting, the 4th fet gate voltage are low, the 4th field-effect tube shutdown, the conducting of the 5th field-effect tube, output signal phase
Position is X2i;When the second control terminal voltage sets high, circuit working state is phase shift state, the shutdown of third field-effect tube, the 4th effect
Should pipe conducting, the 5th field-effect tube shutdown, phase of output signal X2o;Reference state and phase shift state phase difference are X2o-X2i=
11.25 degree, to complete phase shift function.
Wherein, 22.5 degree of phase-shift circuits and 45 degree of phase-shift circuit structures are identical as 11.25 degree of phase-shift circuit structures, have distinguished
At 22.5 degree of phase shift functions and 45 degree of phase shift functions.
Wherein, 90 degree of phase-shift circuits use T-type or the high Low-Pass Filter phase-shift circuit structure of π type, 90 degree of phase-shift circuit packets
Include the 12nd field-effect tube, the 13rd field-effect tube, the 14th field-effect tube, the 15th field-effect tube, the 16th field-effect tube,
17th field-effect tube, the 18th field-effect tube, the 19th field-effect tube, the 4th inductance, the 5th inductance, the 5th capacitor, the 6th
Capacitor, the 7th capacitor, the 8th capacitor, twelfth resistor, thirteenth resistor, the 14th resistance, the 15th resistance, the 16th electricity
Resistance, the 17th resistance, the 18th resistance, the 19th resistance, the 5th phase inverter.12nd FET drain and the 13rd
FET drain, which links together, constitutes signal input part, and the 12nd field-effect tube source electrode connects the leakage of the 16th field-effect tube
Pole, while the 5th capacitor one end is connected, the 5th capacitor other end connects the 6th capacitor one end, while connecting the 4th inductance one end,
4th inductance other end ground connection, the 6th capacitor the 14th field-effect tube source electrode of another termination, while connecting the 18th field-effect tube
Drain electrode, the 14th FET drain and the 15th FET drain, which link together, constitutes signal output end, and the 13rd
Effect pipe source electrode, the 7th capacitor one end, the 5th inductance one end are connect with the 17th FET drain, the 5th inductance other end,
8th capacitor one end, the 15th field-effect tube source electrode are connect with the 19th FET drain, the 7th capacitor other end, the 8th electricity
Hold the other end, the 16th field-effect tube source electrode, the 17th field-effect tube source electrode, the 18th field-effect tube source electrode, the 19th effect
Should pipe source grounding, twelfth resistor one terminate the 12nd fet gate, the 14th resistance one terminate the 14th effect
Tube grid is answered, the 17th resistance one terminates the 17th fet gate, and the 19th resistance one terminates the 19th field-effect tube grid
Pole, the twelfth resistor other end, the 14th resistance other end, the 17th resistance other end, the 19th resistance other end connection the
Five phase inverter anodes, while the 5th control terminal is connected, thirteenth resistor one terminates the 13rd fet gate, the 15th resistance
One the 15th fet gate of termination, the 16th resistance one terminate the 16th fet gate, the 18th resistance one termination
18th fet gate, the thirteenth resistor other end, the 15th resistance other end, the 16th resistance other end, the 18th
The resistance other end connects the 5th phase inverter negative terminal.When the 5th control terminal voltage sets high, circuit working state is reference state, the tenth
The conducting of two field-effect tube, the conducting of the 14th field-effect tube, the conducting of the 17th field-effect tube, the conducting of the 19th field-effect tube, the tenth
The shutdown of three field-effect tube, the shutdown of the 15th field-effect tube, the shutdown of the 16th field-effect tube, the shutdown of the 18th field-effect tube, output
Signal phase is X5i;When the 5th control terminal voltage is set low, circuit working state is phase shift state, and the 12nd field-effect tube turns off,
The shutdown of 14th field-effect tube, the shutdown of the 17th field-effect tube, the shutdown of the 19th field-effect tube, the conducting of the 13rd field-effect tube,
The conducting of 15th field-effect tube, the conducting of the 16th field-effect tube, the conducting of the 18th field-effect tube, phase of output signal X5o, ginseng
It examines state and phase shift state phase difference is X5o-X5i=90 degree, to complete phase shift function.
Wherein, the 180 degree phase-shift circuit (6) uses T-type or the high Low-Pass Filter phase-shift circuit structure of π type, for completing 180
Spend phase shift.
After adopting the above technical scheme, the beneficial effects of the present invention are: using six number of bits word control circuits, phase shift model
Can be covered by enclosing by 0 degree to 360 degree, and minimum phase shift stepping is 5.625 degree;5.625 degree of phase-shift circuit uses are inductively or capacitively in parallel
The high Low-Pass Filter structure of switching mode, structure is simple, without inductance, 11.25 degree of phase-shift circuits, 22.5 degree of phase-shift circuits and 45 degree of phase shifts
Circuit has all only used 1 inductance, and 90 degree of phase-shift circuits and 180 degree phase-shift circuit have all only used 2 inductance, integrated circuit electricity
Feel less, area is smaller;Circuit structure of the invention has fully considered Ku wave band parasitic parameter, and working band is wider, phase shift essence
Degree is high.Phase inverter is added in control circuit, and every grade of circuit only connects 1 control terminal, reduces control terminal quantity.
Detailed description of the invention
Fig. 1 is six bit digital phase shifter functional-block diagram of Ku wave band CMOS of the invention;
Fig. 2 is 5.625 degree of phase-shift circuit schematic illustrations in the present invention;
Fig. 3 is 11.25 degree of phase-shift circuit schematic illustrations in the present invention;
Fig. 4 is 90 degree of phase-shift circuit schematic illustrations in the present invention;
Fig. 5 is insertion loss simulation result diagram under 64 phase shift states of the invention;
Fig. 6 is that 64 phase shift states of the invention move down phase simulation result diagram.
1. 5.625 ° of 2. 11.25 ° of phase-shift circuit, 3. 22.5 ° of phase-shift circuit, 4. 45 ° of phase-shift circuits of phase-shift circuit
5. 90 ° of phase-shift circuits, 6. 180 ° of phase-shift circuits
Specific embodiment
Embodiments of the present invention are described in detail below in conjunction with attached drawing.
As shown in Figure 1, six bit numerical control phase shifter circuit of Ku wave band CMOS of the invention includes 5.625 degree of phase-shift circuits
1,11.25 degree of 2,22.5 degree of phase-shift circuit, 3,45 degree of phase-shift circuit phase-shift circuit, 4,90 degree of phase-shift circuits 5 and 180 degree phase-shift circuit
6.Circuit is connected in series, and 5.625 degree of 1 output ends of phase-shift circuit connect 11.25 degree of 2 input terminals of phase-shift circuit, 11.25 degree of phase shifts
2 output end of circuit connects 22.5 degree of 3 input terminals of phase-shift circuit, and it is defeated that 22.5 degree of 3 output ends of phase-shift circuit connect 45 degree of phase-shift circuits 5
Enter end, 45 degree of 5 output ends of phase-shift circuit connect 90 degree of 5 input terminals of phase-shift circuit, and 90 degree of 5 output ends of phase-shift circuit connect 180 degree
6 input terminal of phase-shift circuit.5.625 degree of 1 input terminals of phase-shift circuit are signal input part, and 6 output end of 180 degree phase-shift circuit is signal
Output end, phase shifting control end are V1~V6, and control circuit includes 6 phase inverter INV1~INV6.
As shown in Fig. 2, 5.625 degree of phase-shift circuits 1 are using the inductively or capacitively high Low-Pass Filter phase-shift circuit knot of paralleling switch type
Structure, including the first field-effect tube M1, the second field-effect tube M2, the first microstrip line W1, first capacitor C1, first resistor R1, second
Resistance R2, the first phase inverter I1.The one end the first capacitor C1 and the first field-effect tube M1 drain electrode connect, and it is defeated to constitute signal together
Enter end, the first field-effect tube M1 source electrode, the second field-effect tube M2 drain electrode, the first capacitor C1 other end and first one end microstrip line W1
It links together, the first microstrip line W1 other end constitutes signal output end, first resistor together with the second field-effect tube M2 source electrode
The one end R1 connects the first field-effect tube M1 grid, and the first resistor R1 other end connects the first control terminal V1, while it is anti-to connect first
Phase device INV1 anode, the one end second resistance R2 connect the second field-effect tube M2 grid, and it is negative that the other end connects the first phase inverter INV1
End.When the first control terminal V1 voltage is set low, circuit working state is reference state, the first field-effect tube M1 shutdown, first effect
Should pipe M1 equivalent circuit be approximately tens kilohms of resistance, the second field-effect tube M2 Gate voltage control signals pass through first
It is high, the second field-effect tube M2 conducting after phase inverter INV1 and second resistance R2, input radio frequency signal is by first capacitor C1 and the
Two field-effect tube M2 pass through, and phase is advanced, phase of output signal X1i.When the first control terminal V1 voltage sets high, circuit work
State is phase shift state, and the first field-effect tube M1 conducting, the second field-effect tube M2 Gate voltage control signals are by phase inverter and electricity
Be after resistance it is low, the second field-effect tube M2 shutdown, the second field-effect tube M2 equivalent circuit is approximately tens kilohms of resistance, defeated
Enter radiofrequency signal to be passed through by the first field-effect tube M1 and the first inductance L1, delayed phase, phase of output signal X1o.Reference state and
Phase shift state phase difference is X1o-X1i=5.625 degree, to complete phase shift function.
As shown in figure 3,11.25 degree of phase-shift circuits use the high Low-Pass Filter phase-shift circuit structure of bridge T-type, 11.25 degree of phase shift electricity
Road includes the field third effect pipe inductance of M3, the 4th field-effect tube M4, the 5th field-effect tube M5, first L1, the second capacitor C2, and second
Microstrip line W2, third microstrip line W3,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, second phase inverter INV2.Described
Three field-effect tube M3 drain electrode links together with second one end microstrip line W2 constitutes signal input part, third field-effect tube M3 source electrode
It links together with the one end third microstrip line W3 and constitutes signal output end, the second microstrip line W2 other end connects third microstrip line W3
The other end, while the 4th field-effect tube M4 drain electrode is connected, the 4th field-effect tube M4 source electrode, the 5th field-effect tube M5 drain electrode, first
The one end inductance L1 is connected together with second one end capacitor C2, the first inductance L1 other end, the second capacitor C2 other end, the 5th
Effect pipe M5 source electrode is connected to ground simultaneously, and the 5th one end resistance R5 is connected to the second control together with the second phase inverter INV2 anode
V2 is held, the 5th resistance R5 other end connects the 5th field-effect tube M5 grid, and the 3rd resistor R3 other end connects third field-effect tube
M3 grid, the one end 3rd resistor R3 are connected to the second phase inverter INV2 negative terminal, the 4th resistance R4 together with the 4th one end resistance R4
The other end connects the 4th field-effect tube M4 grid.When the second control terminal V2 voltage is set low, circuit working state is reference state, the
Three field-effect tube M3 conducting, the 4th field-effect tube M4 grid voltage are low, the 4th field-effect tube M4 shutdown, the 5th field-effect tube M5
Conducting, phase of output signal X2i.When the second control terminal V2 voltage sets high, circuit working state is phase shift state, third field effect
Should pipe M3 shutdown, the 4th field-effect tube M4 conducting, the 5th field-effect tube M5 shutdown, phase of output signal X2o.Reference state and shifting
Phase phase difference is X2o-X2i=11.25 degree, to complete phase shift function.22.5 degree of phase-shift circuits and 45 degree of phase-shift circuit structures
It is identical as 11.25 degree of phase-shift circuit structures, it is respectively completed 22.5 degree of phase shift functions and 45 degree of phase shift functions.
As shown in figure 4,90 degree of phase-shift circuits use T-type or the high Low-Pass Filter phase-shift circuit structure of π type, 90 degree of phase-shift circuit packets
Include the 12nd field-effect tube M12, the 13rd field-effect tube M13, the 14th field-effect tube M14, the 15th field-effect tube M15, the
The 16 field-effect tube electricity of M16, the 17th field-effect tube M17, the 18th field-effect tube M18, the 19th field-effect tube M19, the 4th
Feel L4, the 5th inductance L5, the 5th capacitor C5, the 6th capacitor C6, the 7th capacitor C7, the 8th capacitor C8, twelfth resistor R12, the
The 13 resistance electricity of R13, the 14th resistance R14, the 15th resistance R15, the 16th resistance R16, the 17th resistance R17, the 18th
Hinder R18, the 19th resistance R19, the 5th phase inverter INV5.The 12nd field-effect tube M12 drain electrode and the 13rd field-effect tube
M13 drain electrode, which links together, constitutes signal input part, and the 12nd field-effect tube M12 source electrode connects the 16th field-effect tube M16 leakage
Pole, while the 5th one end capacitor C5 is connected, the 5th capacitor C5 other end connects the 6th one end capacitor C6, while connecting the 4th inductance
The one end L4, the 4th inductance L4 other end ground connection, the 6th capacitor C6 the 14th field-effect tube M14 source electrode of another termination connect simultaneously
18th field-effect tube M18 drain electrode, the 14th field-effect tube M14 drain electrode link together with the 15th field-effect tube M15 drain electrode
Constitute signal output end, the 13rd field-effect tube M13 source electrode, the 7th one end capacitor C7, the 5th one end inductance L5 and the 17th
Effect pipe M17 drain electrode connection, the 5th inductance L5 other end, the 8th one end capacitor C8, the 15th field-effect tube M15 source electrode and the tenth
Nine field-effect tube M19 drain electrode connection, the 7th capacitor C7 other end, the 8th capacitor C8 other end, the 16th source field-effect tube M16
Pole, the 17th field-effect tube M17 source electrode, the 18th field-effect tube M18 source electrode, the 19th field-effect tube M19 source grounding, the
12 resistance R12 mono- terminate the 12nd field-effect tube M12 grid, and the 14th resistance R14 mono- terminates the 14th field-effect tube M14 grid
Pole, the 17th resistance R17 mono- terminate the 17th field-effect tube M17 grid, and the 19th resistance R19 mono- terminates the 19th field-effect tube
M19 grid, the twelfth resistor R12 other end, the 14th resistance R14 other end, the 17th resistance R17 other end, the 19th electricity
It hinders the R19 other end and connects the 5th phase inverter INV5 anode, while connecting the 5th control terminal V5, the termination of thirteenth resistor R13 mono- the
13 field-effect tube M13 grids, the 15th resistance R15 mono- terminate the 15th field-effect tube M15 grid, the 16th resistance R16 mono-
The 16th field-effect tube M16 grid is terminated, the 18th resistance R18 mono- terminates the 18th field-effect tube M18 grid, thirteenth resistor
The R13 other end, the 15th resistance R15 other end, the 16th resistance R16 other end, the 18th resistance R18 other end connection the 5th
Phase inverter INV5 negative terminal.When the 5th control terminal V5 voltage sets high, circuit working state is reference state, the 12nd field-effect tube
M12 conducting, the 14th field-effect tube M14 conducting, the 17th field-effect tube M17 conducting, the 19th field-effect tube M19 conducting, the
13 field-effect tube M13 shutdown, the 15th field-effect tube M15 shutdown, the 16th field-effect tube M16 shutdown, the 18th field-effect
Pipe M18 shutdown, phase of output signal X5i.When the 5th control terminal V5 voltage is set low, circuit working state be phase shift state, the tenth
Two field-effect tube M12 shutdown, the 14th field-effect tube M14 shutdown, the 17th field-effect tube M17 shutdown, the 19th field-effect tube
M19 shutdown, the 13rd field-effect tube M13 conducting, the 15th field-effect tube M15 conducting, the 16th field-effect tube M16 conducting, the
18 field-effect tube M18 conducting, phase of output signal X5o.Reference state and phase shift state phase difference are X5o-X5i=90 degree, thus
Complete phase shift function.180 degree phase-shift circuit and 90 degree of phase-shift circuit structures are identical, can complete 180 degree phase shift function.
As shown in Figure 5 and Figure 6, according to simulation result, a kind of six bit digital phase shifter electricity of Ku wave band CMOS of the present invention
Road phase shift in 14GHz to 18GHz working band can cover 0 degree to 360 degree, and for RMS phase shifting accuracy less than 4 °, insertion loss is small
In 14.4dB.
Using six number of bits word control circuits, phase shift range can cover 0 degree to 360 degree, and minimum phase shift stepping is
5.625 degree;For 5.625 degree of phase-shift circuits using the inductively or capacitively high Low-Pass Filter structure of paralleling switch type, structure is simple, without electricity
Sense, 11.25 degree of phase-shift circuits, 22.5 degree of phase-shift circuits and 45 degree of phase-shift circuits have all only used 1 inductance, 90 degree of phase-shift circuits
2 inductance are all only used with 180 degree phase-shift circuit, integrated circuit inductance is less, and area is smaller;Circuit structure of the invention fills
Divide and consider Ku wave band parasitic parameter, working band is wider, and phase shifting accuracy is high.Phase inverter is added in control circuit, and every grade of circuit is only
1 control terminal is connected, control terminal quantity is reduced.
Claims (6)
1. a kind of six bit digital phase shifter of Ku wave band CMOS, which is characterized in that it include 5.625 degree of phase-shift circuits (1),
11.25 degree of phase-shift circuits (2), 22.5 degree of phase-shift circuits (3), 45 degree of phase-shift circuits (4), 90 degree of phase-shift circuits (5) and 180 degree are moved
Circuitry phase;Foregoing circuit is successively connected in series, and 5.625 degree of phase-shift circuit (1) output ends connect 11.25 degree of phase-shift circuits (2)
Input terminal, 11.25 degree of phase-shift circuit (2) output ends connect 22.5 degree of phase-shift circuit (3) input terminals, 22.5 degree of phase-shift circuits (3)
Output end connects 45 degree of phase-shift circuit (4) input terminals, and 45 degree of phase-shift circuit (4) output ends connect 90 degree of phase-shift circuit (5) inputs
End, 90 degree phase-shift circuit (5) output ends connect 180 degree phase-shift circuit (5) input terminals, phase shifting control end including the first control terminal,
Second control terminal, third control terminal, the 4th control terminal, the 5th control terminal and the 6th control terminal (V1~V6), control circuit include
First phase inverter, the second phase inverter, third phase inverter, the 4th phase inverter, the 5th phase inverter and hex inverter (INV1~
INV6)。
2. six bit digital phase shifter of Ku wave band CMOS according to claim 1, which is characterized in that 5.625 degree of phase shifts
Circuit (1) includes the first field-effect tube (M1), the second field-effect tube (M2), the first microstrip line (W1), first capacitor (C1), and first
Resistance (R1), second resistance (R2), the first phase inverter (I1);Described first capacitor one end (C1) and the first field-effect tube (M1) leak
Pole connects and composes signal input part, and the first field-effect tube (M1) source electrode, the second field-effect tube (M2) drain electrode, first capacitor (C1) are another
One end and the one end the first microstrip line (W1) link together, the first microstrip line (W1) other end and the second field-effect tube (M2) source electrode
Signal output end is constituted together, and first resistor one end (R1) connects the first field-effect tube (M1) grid, and first resistor (R1) is another
End connection the first control terminal (V1), while the first phase inverter (INV1) anode is connected, second resistance one end (R2) connects second
Effect pipe (M2) grid, the other end connect the first phase inverter (INV1) negative terminal;When the first control terminal (V1) voltage is set low, circuit
Working condition is reference state, the first field-effect tube (M1) shutdown, and the second field-effect tube (M2) Gate voltage control signals are by the
One phase inverter (INV1) and second resistance (R2) are afterwards height, and the second field-effect tube (M2) conducting, input radio frequency signal is by the first electricity
Hold (C1) and the second field-effect tube (M2) passes through, phase is advanced, phase of output signal X1i;
When the first control terminal (V1) voltage sets high, circuit working state is phase shift state, and the first field-effect tube (M1) is connected, second
Field-effect tube (M2) Gate voltage control signals are low, the second field-effect tube (M2) shutdown, input after phase inverter and resistance
Radiofrequency signal is passed through by the first field-effect tube (M1) and the first inductance (L1), delayed phase, phase of output signal X1o;Reference state
It is X with phase shift state phase difference1o-X1i=5.625 degree, to complete phase shift function.
3. six bit digital phase shifter of Ku wave band CMOS according to claim 1, which is characterized in that 11.25 degree of phase shifts
Circuit (2) uses the high Low-Pass Filter phase-shift circuit structure of bridge T-type, and 11.25 degree of phase-shift circuits (2) include field third effect pipe
(M3), the 4th field-effect tube (M4), the 5th field-effect tube (M5), the first inductance (L1), the second capacitor (C2), the second microstrip line
(W2), third microstrip line (W3), 3rd resistor (R3), the 4th resistance (R4), the 5th resistance (R5), the second phase inverter (INV2);
Third field-effect tube (M3) drain electrode links together with the one end the second microstrip line (W2) constitutes signal input part, third field effect
(M3) source electrode should be managed and the one end third microstrip line (W3) links together and constitutes signal output end, the second microstrip line (W2) other end
Third microstrip line (W3) other end is connected, while connecting the drain electrode of the 4th field-effect tube (M4), the 4th field-effect tube (M4) source electrode, the
Five field-effect tube (M5) drain electrode, the first inductance one end (L1) are connected together with the one end the second capacitor (C2), the first inductance (L1)
The other end, the second capacitor (C2) other end, the 5th field-effect tube M5 source electrode are connected to ground, the 5th resistance one end (R5) and the simultaneously
Two phase inverters (INV2) anode is connected to the second control terminal (V2) together, and the 5th resistance (R5) other end connects the 5th field-effect tube
(M5) grid, 3rd resistor (R3) other end connect third field-effect tube (M3) grid, 3rd resistor one end (R3) and the 4th electricity
Resistance one end (R4) is connected to the second phase inverter (INV2) negative terminal together, and the 4th resistance (R4) other end connects the 4th field-effect tube
(M4) grid.When the second control terminal (V2) voltage is set low, circuit working state is reference state, and third field-effect tube (M3) is led
Logical, the 4th field-effect tube (M4) grid voltage is low, the 4th field-effect tube (M4) shutdown, and the conducting of the 5th field-effect tube (M5) is defeated
Signal phase is X out2i;
When the second control terminal (V2) voltage sets high, circuit working state is phase shift state, and third field-effect tube (M3) turns off, the 4th
Field-effect tube (M4) conducting, the shutdown of the 5th field-effect tube (M5), phase of output signal X2o, reference state and phase shift state phase difference are
X2o-X2i=11.25 degree, to complete phase shift function.
4. six bit digital phase shifter of Ku wave band CMOS according to claim 3, which is characterized in that 22.5 degree of phase shift electricity
Road and 45 degree of phase-shift circuit structures are identical as 11.25 degree of phase-shift circuit structures, are respectively completed 22.5 degree of phase shift functions and 45 degree of shiftings
Phase function.
5. six bit digital phase shifter of Ku wave band CMOS according to claim 1, which is characterized in that 90 degree of phase-shift circuits
Using T-type or the high Low-Pass Filter phase-shift circuit structure of π type, 90 degree of phase-shift circuits include the 12nd field-effect tube (M12), and the tenth
Three field-effect tube (M13), the 14th field-effect tube (M14), the 15th field-effect tube (M15), the 16th field-effect tube (M16),
17th field-effect tube (M17), the 18th field-effect tube (M18), the 19th field-effect tube (M19), the 4th inductance (L4), the 5th
Inductance (L5), the 5th capacitor (C5), the 6th capacitor (C6), the 7th capacitor (C7), the 8th capacitor (C8), twelfth resistor (R12),
Thirteenth resistor (R13), the 14th resistance (R14), the 15th resistance (R15), the 16th resistance (R16), the 17th resistance
(R17), the 18th resistance (R18), the 19th resistance (R19), the 5th phase inverter (INV5);12nd field-effect tube
(M12) drain electrode links together with the drain electrode of the 13rd field-effect tube (M13) and constitutes signal input part, the 12nd field-effect tube
(M12) source electrode connects the drain electrode of the 16th field-effect tube (M16), while connecting the 5th one end capacitor (C5), and the 5th capacitor (C5) is another
One end connects the 6th one end capacitor (C6), while connecting the 4th one end inductance (L4), the 4th inductance (L4) other end ground connection, and the 6th
Capacitor (C6) the 14th field-effect tube (M14) source electrode of another termination, while the drain electrode of the 18th field-effect tube (M18) is connected, the tenth
Four field-effect tube (M14) drain electrode links together with the drain electrode of the 15th field-effect tube (M15) and constitutes signal output end, and the 13rd
Effect pipe (M13) source electrode, the 7th one end capacitor (C7), the 5th inductance one end (L5) and the drain electrode of the 17th field-effect tube (M17) connect
It connects, the 5th inductance (L5) other end, the 8th one end capacitor (C8), the 15th field-effect tube (M15) source electrode and the 19th field-effect
Manage (M19) drain electrode connection, the 7th capacitor (C7) other end, the 8th capacitor (C8) other end, the 16th source field-effect tube (M16)
Pole, the 17th field-effect tube (M17) source electrode, the 18th field-effect tube (M18) source electrode, the 19th field-effect tube (M19) source electrode are equal
Ground connection, twelfth resistor (R12) one terminate the 12nd field-effect tube (M12) grid, the 14th resistance (R14) one termination the 14th
Field-effect tube (M14) grid, the 17th resistance (R17) one terminate the 17th field-effect tube (M17) grid, the 19th resistance
(R19) the 19th field-effect tube (M19) grid of termination, twelfth resistor (R12) other end, the 14th resistance (R14) are another
End, the 17th resistance (R17) other end, the 19th resistance (R19) other end connect the 5th phase inverter (INV5) anode, connect simultaneously
The 5th control terminal (V5) is connect, thirteenth resistor (R13) one terminates the 13rd field-effect tube (M13) grid, the 15th resistance (R15)
One the 15th field-effect tube (M15) grid of termination, the 16th resistance (R16) one terminate the 16th field-effect tube (M16) grid, the
18 resistance (R18) one terminate the 18th field-effect tube (M18) grid, thirteenth resistor (R13) other end, the 15th resistance
(R15) other end, the 16th resistance (R16) other end, the 18th resistance (R18) other end connect the 5th phase inverter INV5 and bear
End;When the 5th control terminal (V5) voltage sets high, circuit working state is reference state, and the 12nd field-effect tube (M12) is connected, the
14 field-effect tube (M14) conducting, the conducting of the 17th field-effect tube (M17), the conducting of the 19th field-effect tube (M19), the 13rd
Field-effect tube (M13) shutdown, the shutdown of the 15th field-effect tube (M15), the shutdown of the 16th field-effect tube (M16), the 18th effect
(M18) shutdown, phase of output signal X should be managed5i;
When the 5th control terminal (V5) voltage is set low, circuit working state is phase shift state, and the 12nd field-effect tube (M12) turns off,
The shutdown of 14th field-effect tube (M14), the shutdown of the 17th field-effect tube (M17), the shutdown of the 19th field-effect tube (M19), the tenth
Three field-effect tube (M13) conducting, the conducting of the 15th field-effect tube (M15), the conducting of the 16th field-effect tube (M16), the 18th
Effect pipe (M18) conducting, phase of output signal X5o, reference state and phase shift state phase difference are X5o-X5i=90 degree, to complete
Phase shift function.
6. six bit digital phase shifter of Ku wave band CMOS according to claim 5, which is characterized in that the 180 degree is moved
Circuitry phase (6) uses T-type or the high Low-Pass Filter phase-shift circuit structure of π type, for completing 180 degree phase shift.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110854482A (en) * | 2019-11-22 | 2020-02-28 | 南京汇君半导体科技有限公司 | High-frequency switch type phase shifter |
CN113162581A (en) * | 2021-03-22 | 2021-07-23 | 中国电子科技集团公司第十三研究所 | Broadband digital phase shifter based on GaN HEMT device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050280461A1 (en) * | 2004-06-21 | 2005-12-22 | Oki Electric Industry Co., Ltd. | Level shifter circuit with stress test function |
CN102148416A (en) * | 2010-11-24 | 2011-08-10 | 南京理工大学 | Microwave and millimeter wave ultra wide band six-bit microwave monolithic integrated circuit (MMIC) digital phase shifter |
CN202839906U (en) * | 2012-09-26 | 2013-03-27 | 成都嘉纳海威科技有限责任公司 | Microwave single-chip microcomputer numerical control phase shifter |
-
2019
- 2019-04-16 CN CN201910305350.1A patent/CN110138357A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050280461A1 (en) * | 2004-06-21 | 2005-12-22 | Oki Electric Industry Co., Ltd. | Level shifter circuit with stress test function |
CN102148416A (en) * | 2010-11-24 | 2011-08-10 | 南京理工大学 | Microwave and millimeter wave ultra wide band six-bit microwave monolithic integrated circuit (MMIC) digital phase shifter |
CN202839906U (en) * | 2012-09-26 | 2013-03-27 | 成都嘉纳海威科技有限责任公司 | Microwave single-chip microcomputer numerical control phase shifter |
Non-Patent Citations (4)
Title |
---|
刘石生等: "一种高精度宽带幅相控制多功能MMIC", 《固体电子学研究与进展》 * |
李健康等: "Ku波段SiGe幅相多功能芯片设计", 《固体电子学研究与进展》 * |
赵世巍等: "一种新型的六位数字移相器的设计", 《电子测量与仪器学报》 * |
马凯文: "基于SiGe工艺的微波数控移相器芯片及SoC研究", 《中国优秀硕士学位论文全文数据库 信息科技》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110854482A (en) * | 2019-11-22 | 2020-02-28 | 南京汇君半导体科技有限公司 | High-frequency switch type phase shifter |
WO2021098195A1 (en) * | 2019-11-22 | 2021-05-27 | 南京汇君半导体科技有限公司 | High-frequency switch-type phase shifter |
CN113162581A (en) * | 2021-03-22 | 2021-07-23 | 中国电子科技集团公司第十三研究所 | Broadband digital phase shifter based on GaN HEMT device |
CN113162581B (en) * | 2021-03-22 | 2022-08-05 | 中国电子科技集团公司第十三研究所 | Broadband digital phase shifter based on GaN HEMT device |
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