CN112968671A - Novel monolithic integration terahertz second harmonic mixer - Google Patents
Novel monolithic integration terahertz second harmonic mixer Download PDFInfo
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- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
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Abstract
The invention discloses a novel monolithic integration terahertz second harmonic mixer, and relates to the technical field of terahertz mixers. The mixer comprises a substrate, a mixing circuit is formed on the substrate, the mixing circuit comprises a radio frequency input port, the radio frequency input port is connected with one end of a radio frequency filtering structure through a radio frequency matching structure, the other end of the radio frequency matching structure is divided into two paths, the first path is connected with one end of a medium frequency filtering structure, and the second path is connected with the input end of a mixing diode pair; the local oscillator port is connected with one end of the local oscillator filtering structure through the local oscillator matching structure, the other end of the local oscillator filtering structure is connected with the input end of the mixing diode pair, and the other end of the intermediate frequency filtering structure is connected with the intermediate frequency output port. The frequency mixer is mature in process, good in chip consistency and capable of being tested and screened on a chip.
Description
Technical Field
The invention relates to the technical field of terahertz frequency mixers, in particular to a novel monolithic integration terahertz second harmonic frequency mixer.
Background
Terahertz (THz) waves refer to electromagnetic waves within a frequency range of 0.3THz to 3THz, wherein 1THz =1000 GHz. At present, the range of terahertz frequency can be expanded to 0.1 THz-10 THz, and the frequency higher than 100GHz belongs to terahertz frequency. The THz wave occupies a unique position in an electromagnetic wave spectrum, has a wide application prospect in the aspects of security inspection imaging, high-speed wireless communication and the like, and is a key focusing field in the current international scientific and technological field and industrial field.
Because it is difficult to obtain large local oscillation driving power in the terahertz frequency band, the mixer in the terahertz frequency band usually adopts a form of harmonic mixing to reduce the local oscillation frequency to one N times of the radio frequency (N =2, 4, 6 … …), wherein the most commonly used is a second harmonic mixer.
At present, the terahertz mixer chips published at home and abroad are mainly realized based on a hybrid integration method. A circuit passive structure based on a quartz substrate and a terahertz Schottky diode based on a GaAs substrate are respectively designed and processed, and then the discrete diode and the quartz substrate are integrated into a complete mixer circuit through a flip chip welding technology. The implementation of such hybrid integrated circuits has many limitations, which make the hybrid integrated mixer chip difficult to be used in practical and mass production.
Firstly, the size of the schottky diode in the terahertz frequency band is very small, usually less than one hundred micrometers, which requires a flip chip bonding step to be performed by a very specialized technician, and the efficiency is extremely low. Even so, the shift error of flip-chip bonding is typically on the order of ten micrometers, which is unacceptable for circuits in the terahertz frequency band, resulting in increased mixing loss. On the other hand, each port of the hybrid integrated mixer chip adopts a circuit form of waveguide microstrip transition, and the mixer chip can be tested and used only by being assembled into a module form, so that the chip test cannot be directly carried out. Due to the fact that the frequency of the terahertz frequency band is high, the waveguide size is small, the requirement on machining precision of the module cavity is extremely high, machining cost is high, working hours are long, and the research and development period and cost of the terahertz frequency mixer chip are prolonged.
There have also been proposed some hybrid integrated circuit improvement methods in which the substrate of the circuit passive structure is replaced with a GaAs-based substrate, which is the same as the schottky diode, at the time of circuit design, and the thickness of the passive structure substrate is maintained to be the same as the thickness of the schottky diode. When the circuit is manufactured, the discrete Schottky diodes are manufactured firstly, and then the circuit passive structure is manufactured on the periphery of the diodes in a metal sputtering and electroplating mode. By the method, the integrated design of the chip can be realized, and the design precision and efficiency can be improved. However, this method cannot realize the metal via hole connected to the back surface of the substrate when the circuit is fabricated, and the fabricated chip still needs to additionally design a grounded peripheral circuit. Meanwhile, the risk of performance deterioration caused by the influence of the subsequent sputtering electroplating process on the prefabricated schottky diode is difficult to avoid.
Disclosure of Invention
The invention aims to solve the technical problem of how to provide a novel single-chip integrated terahertz second harmonic mixer which is mature in process, good in chip consistency and capable of being tested and screened on a chip.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: the utility model provides a novel monolithic integration terahertz is second harmonic mixer now which characterized in that: the frequency mixing circuit comprises a substrate, wherein a frequency mixing circuit is formed on the substrate, the frequency mixing circuit comprises a radio frequency input port, the radio frequency input port is connected with one end of a radio frequency filtering structure through a radio frequency matching structure, the other end of the radio frequency matching structure is divided into two paths, the first path is connected with one end of a medium frequency filtering structure, and the second path is connected with the input end of a frequency mixing diode pair; the local oscillator port is connected with one end of a local oscillator filtering structure through a local oscillator matching structure, the other end of the local oscillator filtering structure is connected with the input end of the mixing diode pair, and the other end of the intermediate frequency filtering structure is connected with the intermediate frequency output port; the radio frequency signal is input from a radio frequency port and then enters the mixing diode pair after passing through the radio frequency matching structure and the radio frequency filtering structure in sequence; the local oscillation signal of the frequency mixer is input from a local oscillation port and then enters a frequency mixing diode pair after passing through a local oscillation matching structure and a local oscillation filtering structure in sequence; the intermediate frequency signal is output by the two diodes of the mixing diode pair, and is output through the intermediate frequency filtering structure and the intermediate frequency port.
The further technical scheme is as follows: the radio frequency input port and the local oscillator port are respectively connected with the matching structure through a blocking plane capacitor.
The further technical scheme is as follows: the frequency mixer comprises a radio frequency port signal pressure point, the radio frequency port signal pressure point is connected with one end of a first connecting microstrip line through a radio frequency matching microstrip line, the other end of the first connecting microstrip line is connected with one end of a second connecting microstrip line through a radio frequency band-pass filter, the other end of the second connecting microstrip line is connected with one end of an inter-diode connecting microstrip line through a third connecting microstrip line, the cathode of one terahertz Schottky mixing diode is connected with the inter-diode connecting microstrip line, the anode of the terahertz Schottky mixing diode is grounded, the anode of the other terahertz Schottky mixing diode is connected with the inter-diode connecting microstrip line, and the cathode of the terahertz Schottky mixing diode is grounded; the other end of the local oscillator low-pass filter is connected with a connecting microstrip line between the diodes through a fifth connecting microstrip line; one end of the intermediate-frequency low-pass filter is connected with the second connecting microstrip line, and the other end of the intermediate-frequency low-pass filter is connected with the intermediate-frequency port signal pressure point.
The further technical scheme is as follows: and the two sides of the radio frequency port signal pressure point are respectively provided with a radio frequency port grounding pressure point, and the radio frequency port grounding pressure points are respectively connected with the back metal of the substrate through the back metal through holes of the connecting substrate to realize grounding.
Preferably, the radio frequency matching microstrip line is implemented in the form of a high-low impedance microstrip line.
Preferably, the radio frequency band-pass filter adopts a cross-coupled line filter formed by microstrip lines.
The further technical scheme is as follows: two sides of the local oscillator port signal pressure point are respectively provided with a local oscillator port grounding pressure point, and the local oscillator port grounding pressure points are respectively connected with the substrate back metal through holes connected with the substrate back metal to realize grounding.
Preferably: the local oscillation DC blocking capacitor adopts upper and lower metal layers in GaAs diode process to form upper and lower polar plates of the capacitor.
The further technical scheme is as follows: the medium-frequency low-pass filter is in a structure that a series microstrip line is connected with an open-circuit fan-shaped microstrip line in parallel, wherein the equivalent electrical length of the series microstrip line is one fourth of the radio frequency wavelength.
The further technical scheme is as follows: two sides of the intermediate frequency port signal pressure point are respectively provided with an intermediate frequency port grounding pressure point, and the intermediate frequency port grounding pressure points are respectively connected with the substrate back metal through holes connected with the substrate back metal to realize grounding.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: the second harmonic mixer is provided with the Schottky diode and the passive circuit structure on the GaAs substrate, a complete terahertz second harmonic mixer circuit can be formed through one process flow, errors caused by an additional assembling and welding process are avoided, the advantages of high design success rate, high integration level, good consistency and the like are achieved, and chip-on-chip testing and batch screening can be achieved.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a basic topology of a mixer according to an embodiment of the present invention;
FIG. 2 is a detailed circuit diagram of the mixer according to the embodiment of the present invention;
FIG. 3 is a schematic diagram of a 180GHz harmonic mixer according to an embodiment of the invention;
FIG. 4 is a graph of simulation results of conversion loss for the mixer of FIG. 3;
FIG. 5 is a graph of the results of a radio frequency port standing wave ratio (VSWR) simulation of the mixer of FIG. 3;
FIG. 6 is a graph of local oscillator port standing wave ratio (VSWR) simulation results for the mixer of FIG. 3;
FIG. 7 is a graph of the results of intermediate frequency port standing wave ratio (VSWR) simulations of the mixer of FIG. 3;
wherein: 101. a radio frequency matching structure; 102. a radio frequency filtering structure; 103. a local oscillator filtering structure; 104. a local oscillator matching structure; 105. a blocking planar capacitor; 106. a pair of mixing diodes; 107. an intermediate frequency filtering structure; 108. a radio frequency input port; 109. a local oscillator port; 110. an intermediate frequency port; 201. a radio frequency matching microstrip line; 202. a radio frequency band pass filter; 203. a local oscillator low-pass filter; 204. the local oscillator is matched with the microstrip line; 205. a local oscillation blocking capacitor; 206. a terahertz Schottky mixing diode; 207. a ground; 208. an intermediate frequency low pass filter; 209. the first connecting microstrip line; 210. a second connecting microstrip line; 211. the third connecting microstrip line 212 and the microstrip line connected between the diodes; 213. a fifth connecting microstrip line; 214. a fourth connecting microstrip line; 215. a radio frequency port signal pressure point; 216. a radio frequency port ground pressure point; 217. local oscillator port signal pressure points; 218. a local oscillator port grounding pressure point; 219. intermediate frequency port signal pressure points; 220. a grounding pressure point of the intermediate frequency port; 221. a substrate.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1, the embodiment of the present invention discloses a novel monolithic integrated terahertz second harmonic mixer, which includes a substrate 221, a mixer circuit is formed on the substrate 221, the mixer circuit includes a radio frequency input port 108, the radio frequency input port 108 is connected to one end of a radio frequency filter structure 102 through a radio frequency matching structure 101, the other end of the radio frequency matching structure 102 is divided into two paths, the first path is connected to one end of an intermediate frequency filter structure 107, and the second path is connected to an input end of a mixing diode pair 106; the local oscillator port 109 is connected with one end of the local oscillator filtering structure 103 through the local oscillator matching structure 104, the other end of the local oscillator filtering structure 103 is connected with the input end of the mixing diode pair 106, and the other end of the intermediate frequency filtering structure 107 is connected with the intermediate frequency output port 110; the radio frequency signal is input from the radio frequency port 108, then sequentially passes through the radio frequency matching structure 101 and the radio frequency filtering structure 102, and then enters the mixing diode pair 106; the local oscillation signal of the frequency mixer is input from a local oscillation port 109, then sequentially passes through a local oscillation matching structure 104 and a local oscillation filtering structure 103, and then enters a frequency mixing diode pair 106; the intermediate frequency signal is output from the two diodes of the mixing diode pair 106 via the intermediate frequency filtering structure 107 and the intermediate frequency port 110, and further, the radio frequency input port 108 and the local oscillator port 109 are connected to the matching structure via a dc blocking plane capacitor 105, respectively.
For better illustration of the mixer of the present invention, the embodiment of the present invention is illustrated by a single-chip integrated 180GHz second harmonic mixer chip in fig. 2, wherein:
the radio frequency input port 108 comprises a radio frequency port signal pressure point 215 and two radio frequency port grounding pressure points 216, and the radio frequency port grounding pressure points 216 are respectively connected with the substrate back metal through holes connected with the substrate back metal to realize grounding;
the radio frequency matching structure 101 is realized by a radio frequency matching microstrip line 201, and matching is realized in a high-low impedance microstrip line mode.
The rf filtering structure 102 is implemented by an rf band-pass filter 202 in the form of a cross-coupled line filter formed by microstrip lines, which has a dc isolation function at the same time, so that there is no separate dc blocking planar capacitor 105 on the rf side.
The mixing diode pair 106 is composed of the terahertz schottky mixing diode 206 in fig. 2 and a microstrip line 212 connected between the two diodes; the cathode of one terahertz schottky mixing diode 206 is interconnected with the anode of the other terahertz schottky mixing diode 206 through a microstrip line 212 connected between the diodes to form a mixing diode pair 106, and meanwhile, the anode of the first terahertz schottky mixing diode 206 and the cathode of the second terahertz schottky mixing diode 206 are respectively connected with a through hole connected with metal on the back of the substrate to form a complete direct current loop;
the local oscillator port 109 comprises a local oscillator port signal pressure point 217 and two local oscillator port ground pressure points 218, and the local oscillator port ground pressure points 218 are respectively connected with the substrate back metal through holes connected with the substrate back metal to realize grounding;
the local oscillation blocking capacitor 205 adopts upper and lower metal layers in the GaAs diode process to form upper and lower plates;
the local oscillator matching structure 104 is realized by a local oscillator matching microstrip line 204, and matching is realized in a mode of connecting a high-low impedance microstrip line with a parallel open-circuit microstrip line;
the local oscillator filtering structure 103 is realized by a local oscillator low-pass filter 203, adopts an improved compact microstrip resonance unit structure, has the advantages of compact structure and low loss, and can effectively reduce the size of the whole chip;
the intermediate frequency filter structure 107 is a structure in which series microstrip lines are connected in parallel with open-circuit sector microstrip lines. The equivalent electrical length of the series microstrip line is one fourth of the radio frequency wavelength, and the leakage of radio frequency signals to the intermediate frequency port can be effectively isolated. The parallel open-circuit fan-shaped microstrip line in the structure can be replaced by a DC blocking planar capacitor 105 with a corresponding capacitance value, which is beneficial to further reducing the size of the layout.
The if port 110 includes an if port signal pressure point 219 and two if port ground pressure points 220, and the if port ground pressure points 220 are connected to the substrate back metal through vias connected to the substrate back metal to achieve grounding.
The first connecting microstrip line 209, the second connecting microstrip line 210, the third connecting microstrip line 211, the inter-diode connecting microstrip line 212, the fifth connecting microstrip line 213 and the fourth connecting microstrip line 214 are connecting transition structures among all parts of the circuit;
further, as shown in fig. 2, the present application discloses a novel monolithic integrated terahertz second harmonic mixer, the frequency mixer comprises a radio frequency port signal pressure point 215, the radio frequency port signal pressure point 215 is connected with one end of a first connecting microstrip line 209 through a radio frequency matching microstrip line 201, the other end of the first connecting microstrip line 209 is connected with one end of a second connecting microstrip line 210 through a radio frequency band-pass filter 202, the other end of the second microstrip 210 is connected to one end of the microstrip 212 via a third microstrip 211, the cathode of a thz schottky mixing diode 206 is connected to the microstrip 212, the positive electrode of the terahertz schottky mixing diode 206 is grounded 207, the positive electrode of the other terahertz schottky mixing diode 206 is connected with the inter-diode connecting microstrip line 212, and the negative electrode of the terahertz schottky mixing diode 206 is grounded 207; the local oscillator port signal pressure point 217 is connected with one end of a local oscillator matching microstrip line 204 through a local oscillator blocking capacitor 205, the other end of the local oscillator matching microstrip line 204 is connected with one end of a local oscillator low-pass filter 203 through a fourth connecting microstrip line 214, and the other end of the local oscillator low-pass filter 203 is connected with an inter-diode connecting microstrip line 212 through a fifth connecting microstrip line 213; one end of the if low-pass filter 208 is connected to the second microstrip line 210, and the other end of the if low-pass filter 210 is connected to the if port signal voltage point 219.
FIG. 3 is a schematic diagram of a 180GHz harmonic mixer; fig. 4 is a simulation result of the frequency conversion loss of the above-mentioned mixer, and the operating conditions are as follows: the radio frequency range is 160GHz to 200 GHz; the local oscillation frequency range is 79.5GHz to 99.5 GHz; the intermediate frequency is 1 GHz. Fig. 5 shows the simulation result of the standing wave ratio (VSWR) of the rf port of the mixer, where the operating conditions are as follows: the radio frequency range is 160GHz to 200 GHz; the local oscillation frequency range is 79.5GHz to 99.5 GHz; the intermediate frequency is 1 GHz. Fig. 6 shows a local oscillator port standing wave ratio (VSWR) simulation result of the above mixer, where the operating conditions are as follows: the radio frequency range is 160GHz to 200 GHz; the local oscillation frequency range is 79.5GHz to 99.5 GHz; the intermediate frequency is 1 GHz. Fig. 7 shows the simulation result of the standing wave ratio (VSWR) of the intermediate frequency port of the mixer, where the operating conditions are as follows: the radio frequency range is 160GHz to 200 GHz; the local oscillation frequency range is 79.5GHz to 99.5 GHz; the intermediate frequency is 1 GHz.
Claims (10)
1. The utility model provides a novel monolithic integration terahertz is second harmonic mixer now which characterized in that: the frequency mixer comprises a substrate (221), wherein a frequency mixing circuit is formed on the substrate (221), the frequency mixing circuit comprises a radio frequency input port (108), the radio frequency input port (108) is connected with one end of a radio frequency filtering structure (102) through a radio frequency matching structure (101), the other end of the radio frequency matching structure (102) is divided into two paths, the first path is connected with one end of an intermediate frequency filtering structure (107), and the second path is connected with the input end of a frequency mixing diode pair (106); the local oscillator port (109) is connected with one end of a local oscillator filtering structure (103) through a local oscillator matching structure (104), the other end of the local oscillator filtering structure (103) is connected with the input end of a mixing diode pair (106), and the other end of the intermediate frequency filtering structure (107) is connected with an intermediate frequency output port (110); the radio frequency signal is input from a radio frequency port (108), then sequentially passes through a radio frequency matching structure (101) and a radio frequency filtering structure (102), and then enters a mixing diode pair (106); local oscillation signals of the frequency mixer are input through a local oscillation port (109), then sequentially pass through a local oscillation matching structure (104) and a local oscillation filtering structure (103), and then enter a frequency mixing diode pair (106); the intermediate frequency signal is output by two diodes of the mixing diode pair (106) in the middle, and is output through an intermediate frequency filtering structure (107) and an intermediate frequency port (110).
2. The novel monolithically integrated terahertz second harmonic mixer of claim 1, wherein: the radio frequency input port (108) and the local oscillator port (109) are respectively connected with the matching structure through a DC blocking plane capacitor (105).
3. The novel monolithically integrated terahertz second harmonic mixer of claim 1, wherein: the frequency mixer comprises a radio frequency port signal pressure point (215), the radio frequency port signal pressure point (215) is connected with one end of a first connecting microstrip line (209) through a radio frequency matching microstrip line (201), the other end of the first connecting microstrip line (209) is connected with one end of a second connecting microstrip line (210) through a radio frequency band-pass filter (202), the other end of the second connecting microstrip line (210) is connected with one end of an inter-diode connecting microstrip line (212) through a third connecting microstrip line (211), the cathode of a terahertz Schottky mixing diode (206) is connected with the inter-diode connecting microstrip line (212), the positive pole of the terahertz Schottky mixer diode (206) is grounded (207), the positive pole of the other terahertz Schottky mixer diode (206) is connected with the microstrip line (212) connected between the diodes, the negative pole of the terahertz Schottky mixer diode (206) is grounded (207); a local oscillator port signal pressure point (217) is connected with one end of a local oscillator matching microstrip line (204) through a local oscillator blocking capacitor (205), the other end of the local oscillator matching microstrip line (204) is connected with one end of a local oscillator low-pass filter (203) through a fourth connecting microstrip line (214), and the other end of the local oscillator low-pass filter (203) is connected with an inter-diode connecting microstrip line (212) through a fifth connecting microstrip line (213); one end of the intermediate-frequency low-pass filter (208) is connected with the second connecting microstrip line (210), and the other end of the intermediate-frequency low-pass filter (210) is connected with an intermediate-frequency port signal pressure point (219).
4. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: two sides of the radio frequency port signal pressure point (215) are respectively provided with a radio frequency port grounding pressure point (216), and the radio frequency port grounding pressure points (216) are respectively connected with the back metal of the substrate through the back metal through holes of the connecting substrate to realize grounding.
5. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: the radio frequency matching microstrip line (201) is realized in a high-low impedance microstrip line mode.
6. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: the radio frequency band-pass filter (202) adopts a cross-coupled line filter formed by microstrip lines.
7. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: two sides of the local oscillator port signal pressure point (217) are respectively provided with a local oscillator port grounding pressure point (218), and the local oscillator port grounding pressure points (218) are respectively connected with the substrate back metal through holes connected with the substrate back metal to realize grounding.
8. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: the local oscillation DC blocking capacitor (205) adopts upper and lower metal layers in the GaAs diode process to form upper and lower electrode plates of the capacitor.
9. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: the intermediate frequency low-pass filter (208) is in a structure that a series microstrip line is connected with an open-circuit sector microstrip line in parallel, wherein the equivalent electrical length of the series microstrip line is one fourth of the radio frequency wavelength.
10. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: two sides of the intermediate frequency port signal pressure point (219) are respectively provided with an intermediate frequency port grounding pressure point (220), and the intermediate frequency port grounding pressure points (220) are respectively connected with the substrate back metal through holes connected with the substrate back metal to realize grounding.
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| CN113534056A (en) * | 2021-06-24 | 2021-10-22 | 南京信息工程大学 | Broadband millimeter wave second harmonic mixer |
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| CN209133660U (en) * | 2018-12-29 | 2019-07-19 | 同方威视技术股份有限公司 | Terahertz frequency mixer and electronic equipment including the frequency mixer |
| CN110445507A (en) * | 2019-08-13 | 2019-11-12 | 李冲 | A kind of millimeter wave Terahertz transceiver module and its working method |
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| CN107196608A (en) * | 2017-05-27 | 2017-09-22 | 中国电子科技集团公司第四十研究所 | A kind of new integrated th harmonic mixer of Terahertz frequency range Band Monolithic Integrated |
| CN107370458A (en) * | 2017-07-28 | 2017-11-21 | 电子科技大学 | A kind of Terahertz mixting circuit based on single slice integration technique |
| CN209133660U (en) * | 2018-12-29 | 2019-07-19 | 同方威视技术股份有限公司 | Terahertz frequency mixer and electronic equipment including the frequency mixer |
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| CN113534056A (en) * | 2021-06-24 | 2021-10-22 | 南京信息工程大学 | Broadband millimeter wave second harmonic mixer |
| CN113534056B (en) * | 2021-06-24 | 2024-01-19 | 南京信息工程大学 | Broadband millimeter wave second harmonic mixer |
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