CN111987996A - Low local oscillator drive plus offset terahertz even harmonic mixer - Google Patents
Low local oscillator drive plus offset terahertz even harmonic mixer Download PDFInfo
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Abstract
The invention provides a low local oscillator driven externally biased terahertz even harmonic mixer, which belongs to the technical field of mixers, and is characterized in that a radio frequency transmission circuit receives an RF signal and outputs the RF signal; the series T-shaped diode is used for receiving the RF signal output by the radio frequency transmission circuit and mixing the RF signal with the LO signal output by the local oscillator transmission circuit; the local oscillator transmission circuit receives the LO signal and outputs the LO signal; the frequency mixing signal transmission circuit outputs an intermediate frequency signal after frequency mixing through the series T-shaped diode pair; the voltage bias circuit applies conducting negative voltage for the series T-shaped diode pair. In the invention, two diodes connected in series are used as a frequency mixing tube core, so that the frequency mixer can meet the requirement that radio frequency and local oscillation at any time are in reverse parallel relative to the two diodes, and the requirement of even harmonic frequency mixing is met; the required pumping power is low, and the method is suitable for a high-frequency band mixer: and by adopting a mode of externally adding bias voltage, the barrier height of the diode is reduced, so that the local oscillation driving power required by the diode when the diode works in a nonlinear region is reduced.
Description
Technical Field
The invention relates to the technical field of mixers, in particular to a low-local-oscillator-driven external-bias terahertz even harmonic mixer.
Background
The terahertz frequency mixer is a core component of radio astronomy, wireless communication, meteorological remote sensing, radar, microwave measurement and other systems, and plays an important role in scientific research, experiments and production. The terahertz harmonic mixer is used as a core component of a terahertz signal receiving unit, the frequency conversion loss of the terahertz harmonic mixer directly determines the signal receiving sensitivity and is the most critical index of the mixer, and the frequency conversion loss of the mixer depends on the circuit design, wherein the local oscillator driving power influence is important.
At present, a test instrument and a radar receiving product with the frequency of more than 1THz exist, and the systems all need a mixer module corresponding to the frequency of the system. However, with the increase of the operating frequency, the receiver driving link needs a local vibration source with higher frequency, high output power, less stray, and high reliability to be matched, which leads to a rapid increase in cost, and even such a local vibration source cannot be manufactured. How to manufacture a low-power-driven mixer under the condition of less influence on frequency conversion loss becomes a key point of the development of a broadband solid-state mixer towards a higher terahertz frequency band.
Aiming at the problem that the receiving sensitivity of a system is reduced due to the increase of frequency conversion loss, two traditional mixer design schemes are adopted, and the first scheme adopts a higher harmonic mixing circuit to reduce the dependence on a high-performance local oscillation signal source. As shown in fig. 1, the frequency mixing structure mainly includes a radio frequency and local oscillator probe, a local oscillator and intermediate frequency filter, an antiparallel diode pair, a matching and grounding circuit, and the like. The circuit form of the first scheme is shown in fig. 2, the diodes of the frequency mixer need to be driven by larger local oscillator pumping power when being started, and in order to reduce the cost of the local oscillator and the implementation difficulty, the frequency mixing scheme with higher harmonic is mainly adopted at present.
The second scheme integrates the GaAs diode, the frequency mixing circuit and the driving circuit respectively by utilizing an integration technology, enhances the performance consistency, reduces the poor matching caused by the manual assembly of the diode of the frequency mixer and the increase of the power transmission loss caused by the conversion of various microstrip-waveguide and waveguide-microstrip structures of the local vibration source, and realizes the high-efficiency transmission of the local vibration power to the frequency mixing circuit. As shown in fig. 3, in the second scheme, an amplifying chip and a frequency doubling chip of the local oscillation driving source are integrated into one source module, so that the power transmission efficiency is improved.
Although the first scheme can reduce the requirement on the performance of the high local oscillator signal source, the problems of large frequency conversion loss and low system sensitivity exist, the transmission loss is large, the required local oscillator pumping power is large, and the high-power local oscillator source is extremely difficult to realize above a 1THz frequency band.
Although the second scheme avoids the problems of poor local oscillator transmission impedance and large local oscillator driving power caused by manual assembly of diodes, the frequency range of 1THz and above is limited by materials and the current technical level, a local oscillator source with high power is difficult to obtain, and the requirement cannot be met due to small output driving power.
Disclosure of Invention
The invention aims to provide a low local oscillator drive external bias terahertz even harmonic mixer which can reduce the required local oscillator pumping power and ensure better flatness in a frequency conversion loss band, so as to solve at least one technical problem in the background technology.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a low local oscillator drive external bias terahertz even harmonic mixer, which comprises:
a radio frequency transmission circuit receiving the RF signal and outputting the RF signal;
the T-shaped diode pair is connected in series, receives the RF signal output by the radio frequency transmission circuit and mixes the RF signal with the LO signal output by the local oscillator transmission circuit;
the local oscillator transmission circuit receives the LO signal, prevents the RF signal from passing through and outputs the LO signal;
the frequency mixing signal transmission circuit outputs an intermediate frequency signal after frequency mixing through the series T-shaped diode pair;
and the voltage bias circuit applies conducting negative voltage to the series T-shaped diode pair.
Preferably, the radio frequency transmission circuit comprises a radio frequency probe and a radio frequency transmission matching section connected with the radio frequency probe;
the radio frequency probe receives the RF signal transmitted by the waveguide and converts the RF signal from a TE mode to a QTEM mode;
and the radio frequency transmission matching section receives QTEM mode RF signals and transmits the QTEM mode RF signals to the series T-shaped diode pair, and the radio frequency transmission matching section can realize the matching of the radio frequency output probe and the impedance of the diode.
Preferably, the local oscillator transmission circuit includes a suspension microstrip, the suspension microstrip receives the LO signal transmitted by the waveguide and transmits the LO signal to the local oscillator low-pass filter, and the local oscillator low-pass filter transmits the LO signal to the series T-type diode pair.
Preferably, a first matching section is connected between the suspension microstrip and the local oscillator low-pass filter.
Preferably, a second matching section is connected between the local oscillator low-pass filter and the series T-shaped diode pair.
Preferably, the mixing signal transmission circuit comprises a third matching section connected with the suspension microstrip, the third matching section is connected with a medium-frequency low-pass filter, and the medium-frequency low-pass filter is connected with the medium-frequency signal output port.
Preferably, the voltage bias circuit comprises a plate capacitor connected with the negative electrode of the series T-type diode pair, the plate capacitor is connected with a voltage stabilizing source, and the positive electrode of the series T-type diode pair is grounded.
Preferably, a low-pass filter is connected between the flat capacitor and the voltage-stabilizing source.
Preferably, the radio frequency transmission circuit, the series T-shaped diode pair, the local oscillator transmission circuit and the mixing signal transmission circuit are integrated on the bearing substrate together.
Preferably, the carrier substrate is a GaAs substrate.
The invention has the beneficial effects that: compared with the traditional mixer, the frequency conversion loss performance is ensured, the local oscillator pumping power is reduced, the whole circuit adopts a monolithic integration scheme, the preparation and the realization are facilitated, and the advantages are obvious especially in the frequency band above 1 THz.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a diagram illustrating a first conventional topology of a mixer.
Fig. 2 is a circuit configuration diagram of a first conventional mixer.
Fig. 3 is a diagram of a second conventional mixer topology.
Fig. 4 is a schematic block diagram of a low local oscillator plus offset terahertz even harmonic mixer according to an embodiment of the present invention.
Fig. 5 is a circuit structure diagram of a low local oscillator plus offset terahertz even harmonic mixer according to an embodiment of the present invention.
Wherein: 1-a radio frequency transmission circuit; 2-a pair of series-connected T-type diodes; 3-local oscillator transmission circuit; 4-a mixing signal transmission circuit; 5-a voltage bias circuit; 6-a radio frequency probe; 7-radio frequency transmission matching section; 8-a waveguide; 9-suspending the microstrip; 10-local oscillator low pass filter; 11-first matching section; 12-a second matching section; 13-third matching section; 14-an intermediate frequency low pass filter; 15-intermediate frequency signal output port; 16-plate capacitance; 17-a voltage regulator source; 18-a low-pass filter; 19-carrying substrate.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below by way of the drawings are illustrative only and are not to be construed as limiting the invention.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
In the description of this patent, it is to be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientations and positional relationships indicated in the drawings for the convenience of describing the patent and for the simplicity of description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the patent.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
For the purpose of facilitating an understanding of the present invention, the present invention will be further explained by way of specific embodiments with reference to the accompanying drawings, which are not intended to limit the present invention.
It should be understood by those skilled in the art that the drawings are merely schematic representations of embodiments and that the elements shown in the drawings are not necessarily required to practice the invention.
Example 1
The low local oscillator driving and bias-applied terahertz even harmonic mixer provided by the embodiment 1 of the invention provides a starting voltage for the diode mixing tube cores connected in series through bias voltage, and reduces the local oscillator driving power.
Fig. 4 is a schematic block diagram of a structure of a low local oscillator driven biased terahertz even harmonic mixer according to embodiment 1 of the present invention. As shown in fig. 4, the mixer includes: the radio frequency transmission circuit 1, the series T-shaped diode pair 2, the local oscillator transmission circuit 3 and the mixing signal transmission circuit 4, the voltage bias circuit 5 is connected with the series T-shaped diode pair 2 and applies conducting negative voltage to the series T-shaped diode pair 2.
The radio frequency transmission circuit 1 receives the RF signal and outputs the RF signal; the series T-shaped diode pair 2 receives the RF signal output by the radio frequency transmission circuit 1 and mixes the RF signal with the LO signal output by the local oscillator transmission circuit 3; the local oscillation transmission circuit 3 receives the LO signal, outputs the LO signal and transmits the LO signal to the series T-shaped diode pair 2; the mixing signal transmission circuit 4 outputs the intermediate frequency signal IF mixed by the series T-type diode pair 2.
Fig. 5 is a circuit connection diagram of a low local oscillator driven biased terahertz even harmonic mixer according to embodiment 1 of the present invention.
As shown in fig. 5, the rf transmission circuit 1 includes an rf probe 6, and an rf transmission matching section 7 is connected to the rf probe 6.
Wherein the RF probe 6 receives RF signals transmitted through the air waveguide 8 and converts the RF signals from TE mode to QTEM mode. The TE mode is a transverse electric wave, and the QTEM mode is also called a quasi-TEM mode, and is a transverse electromagnetic wave, which is one of electromagnetic wave transmission modes.
The radio frequency transmission matching node 7 receives QTEM mode RF signals and transmits the QTEM mode RF signals to the series T-shaped diode pair 2. The radio frequency transmission matching section 7 has the main function of solving the problem that the impedance of the radio frequency probe 6 is not matched with the impedance of the T-shaped diode, and has the functions of reducing radio frequency transmission loss and improving frequency mixing performance. The matching section uses a quarter open-circuit branch section, and has the characteristics of small occupied area and good matching effect.
The local oscillator transmission circuit 3 comprises a suspension microstrip 9, the suspension microstrip 9 receives LO signals transmitted by the air waveguide 8 for coupling, local oscillator signals are converted into QTEM (quantitative trait locus) modes from TE (transverse electric) modes and transmitted to a local oscillator low-pass filter 10, and the local oscillator low-pass filter 10 transmits the LO signals to the series T-shaped diode pair 2. The local oscillator low pass filter 10 has the property of allowing the local oscillator signal to pass through and preventing the radio frequency signal from passing through, preventing the radio frequency signal from leaking into the intermediate frequency and duplex waveguides.
A first matching section 11 is connected between the suspension microstrip 9 and the local oscillator low-pass filter 10, and the suspension microstrip 9 transmits the LO signal to the local oscillator low-pass filter 10 through the first matching section 11. The main function of the first matching section 11 is to improve the discontinuous impedance between the suspended microstrip 9 and the low-pass filter 10 and reduce the local oscillation transmission loss.
A second matching node 12 is connected between the local oscillator low-pass filter 10 and the series T-type diode pair 2, and the local oscillator low-pass filter 10 transmits the LO signal to the series T-type diode pair 2 through the second matching node 12. The main function of the second matching node 12 is to implement local oscillator low-pass filtering and impedance discontinuity between diodes to improve local oscillator transmission efficiency and reduce local oscillator power.
The mixing signal transmission circuit 4 comprises a third matching node 13 connected with the suspension microstrip 9, the third matching node 13 is connected with an intermediate frequency low pass filter 14, and the intermediate frequency low pass filter 14 is connected with an intermediate frequency signal output port 15. The intermediate frequency signal IF mixed by the series T-shaped diode pair 2 is transmitted to a third matching section 13 through the suspension microstrip 9, the IF signal is transmitted to an intermediate frequency low pass filter 14 by the third matching section 13, and the IF signal is transmitted to an intermediate frequency signal output port 15 by the intermediate frequency low pass filter 14 for output. The mid-frequency low-pass filter 14 can block the passage of the QTEM mode LO signal coupled by the suspended microstrip 9.
The voltage bias circuit 5 comprises a plate capacitor 16 connected with the negative electrode of the series T-shaped diode pair 2, the plate capacitor 16 is connected with a voltage stabilizing source 17, and the positive electrode of the series T-shaped diode pair 2 is grounded. The plate capacitor 16 can apply bias voltage to the diode and generate radio frequency short circuit, so that radio frequency signals are reflected back to the circuit, leakage of the radio frequency signals is reduced, and frequency mixing efficiency is improved.
The voltage stabilizing source 17 provides proper negative pressure to conduct the diode, and the conducted diode can mix the radio frequency signal and the local oscillator signal merged in the diode pair to obtain a required intermediate frequency signal by utilizing the nonlinearity of the diode and only needing small local oscillator signal power.
A low-pass filter 18 is connected between the plate capacitor 16 and the voltage regulator 17. The low pass filter 18 is designed to prevent the rf signal from leaking from the dc offset terminal, thereby improving the mixing efficiency.
The radio frequency transmission circuit 1, the series T-shaped diode pair 2, the local oscillator transmission circuit 3 and the mixing signal transmission circuit 4 are integrated on the bearing substrate 19 together, so that the whole circuit is easy to process and assemble. The carrier substrate 19 may be a GaAs substrate.
Example 2
As shown in fig. 4, the low local oscillator driving bias-applied terahertz even harmonic mixer provided in embodiment 2 of the present invention mainly includes: the frequency mixing generating circuit integrates a radio frequency transmission circuit, a series T-shaped diode pair, a local oscillator transmission circuit and an intermediate frequency transmission circuit on a GaAs substrate in a monolithic integration mode. The problem of impedance and poor performance consistency caused by manual assembly of the diode is avoided.
The voltage bias circuit provides the voltage for the diode to conduct and avoids the leakage of the radio frequency signal. Because the voltage bias circuit makes the frequency mixing diode conducted, the frequency mixing diode is not required to be started by larger local oscillation driving power, and the local oscillation power is reduced.
FIG. 5 is a circuit diagram of a low local oscillator driving bias applied terahertz even harmonic mixer.
As shown in fig. 5, the RF signal RF is transmitted to the RF probe 6 via the elevation waveguide, the RF probe 6 converts the TE mode transmitted by the waveguide into the QTEM mode that can be transmitted via the suspended microstrip 9, and the RF signal is transmitted to the series T-diode pair 2 via the matching structure (RF transmission matching node 7). Similarly, the local oscillation source driving signal LO is transmitted to the waveguide suspension microstrip 9 of the duplexer via the elevation waveguide, and the suspension microstrip 9 couples the local oscillation waveguide signal to the suspension microstrip 9.
The right side of the suspension microstrip 9 is connected with an intermediate frequency low pass filter 14, the intermediate frequency low pass filter 14 will prevent the QTEM mode local oscillator LO signal coupled by the suspension microstrip 9 from passing through, therefore, the local oscillator LO signal is only transmitted to the local oscillator low pass filter 10 through the matching section (the first matching section 11) (the local oscillator low pass filter 10 has the characteristic of allowing the local oscillator signal to pass through and preventing the radio frequency signal from passing through will prevent the radio frequency signal from leaking to the intermediate frequency and duplex waveguide), and then the local oscillator signal is transmitted to the series T-type diode pair 2 through the matching section (the second matching section 12) to be merged with the radio frequency signal RF.
The anode of the series T-shaped diode pair 2 is grounded through a gold wire, the cathode is connected with a flat capacitor 16 through a gold wire, and the flat capacitor 16 is connected and then connected with a low-pass filter 18. The series T-shaped diode pair 2 is obtained by connecting two diodes in series, wherein two ends of the diode after series connection are respectively connected with the cavity wall and the bias circuit, and the middle bonding pad lead-out wires of the two diodes are respectively combined with the tubes connected with radio frequency and local oscillation signals.
The plate capacitor 16 can apply bias voltage to the diode and generate radio frequency short circuit, so that the radio frequency signal is reflected back to the circuit, the leakage of the radio frequency signal is reduced, and the frequency mixing efficiency is improved, and the low-pass filter 18 designed in the bias circuit can prevent the radio frequency signal from leaking from the direct current bias terminal, so that the frequency mixing efficiency is improved.
Finally, the low-pass filter 18 is connected with the voltage stabilizing source 17, the voltage stabilizing source 17 provides proper negative pressure to conduct the diode, and the conducted diode can mix the radio frequency signal and the local oscillator signal merged in the diode pair to obtain the required intermediate frequency signal by utilizing the nonlinearity of the diode and only needing smaller local oscillator signal power.
The mixed intermediate frequency signal is transmitted to an intermediate frequency signal output port 15 for output through a second matching node 12, a local oscillator low-pass filter 10, a first matching node 11, a third matching node 13 and an intermediate frequency low-pass filter 14 in sequence.
In summary, in the low local oscillator driving and externally biased terahertz even harmonic mixer according to the embodiment of the present invention, since the two diodes connected in series are adopted to design the mixing die, the mixer meets the requirement that the radio frequency and the local oscillator at any time are both in anti-parallel with respect to the two diodes, and meets the requirement of even harmonic mixing, and the serial connection mode facilitates port voltage injection, and is beneficial to the design of the mixer; the required pumping power is low, and the method is suitable for a high-frequency band mixer: due to the adoption of the mode of externally adding bias voltage, the potential barrier height of the diode is reduced, so that the local oscillation driving power required by the diode when the diode works in a nonlinear region is reduced. Meanwhile, the circuit adopts a single-chip integration mode, and is easy to process and assemble.
The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, and various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Although the present disclosure has been described with reference to the specific embodiments shown in the drawings, it is not intended to limit the scope of the present disclosure, and it should be understood by those skilled in the art that various modifications and variations can be made without inventive faculty based on the technical solutions disclosed in the present disclosure.
Claims (10)
1. The utility model provides a low local oscillator drive plus offset's terahertz even harmonic mixer which characterized in that includes:
a radio frequency transmission circuit (1) that receives an RF signal and outputs the RF signal;
the T-shaped diode pair (2) is connected in series, receives the RF signal output by the radio frequency transmission circuit (1) and mixes the RF signal with the LO signal output by the local oscillator transmission circuit (3);
a local oscillation transmission circuit (3) which receives the LO signal, prevents the RF signal from passing through, and outputs the LO signal;
a mixing signal transmission circuit (4) for outputting the intermediate frequency signal mixed by the series T-shaped diode pair (2);
and the voltage bias circuit (5) applies conducting negative voltage to the series T-shaped diode pair (2).
2. The low local oscillator drive applied bias terahertz even harmonic mixer of claim 1, characterized in that:
the radio frequency transmission circuit (1) comprises a radio frequency probe (6) and a radio frequency transmission matching section (7) connected with the radio frequency probe (6);
the radio frequency probe (6) receives the RF signal transmitted by the waveguide (8) and converts the RF signal from a TE mode to a QTEM mode;
and the radio frequency transmission matching section (7) is used for realizing impedance matching between the radio frequency probe (6) and the series T-shaped diode pair (2), receiving QTEM (quantitative trait locus) mode RF (radio frequency) signals and transmitting the QTEM mode RF signals to the series T-shaped diode pair (2).
3. The low local oscillator drive applied bias terahertz even harmonic mixer of claim 2, characterized in that:
the local oscillator transmission circuit (3) comprises a suspension microstrip (9), the suspension microstrip (9) receives the LO signal transmitted by the waveguide (8) and transmits the LO signal to the local oscillator low-pass filter (10), and the local oscillator low-pass filter (10) transmits the LO signal to the series T-shaped diode pair (2).
4. The low local oscillator drive applied bias terahertz even harmonic mixer of claim 3, characterized in that:
and a first matching section (11) is connected between the suspension microstrip (9) and the local oscillator low-pass filter (10).
5. The low local oscillator drive applied bias terahertz even harmonic mixer of claim 4, characterized in that:
and a second matching section (12) is connected between the local oscillator low-pass filter (10) and the series T-shaped diode pair (2).
6. The low local oscillator drive applied bias terahertz even harmonic mixer of claim 5, characterized in that:
the mixing signal transmission circuit (4) comprises a third matching section (13) connected with the suspension microstrip (9), the third matching section (13) is connected with an intermediate frequency low-pass filter (14), and the intermediate frequency low-pass filter (14) is connected with an intermediate frequency signal output port (15).
7. The low local oscillator drive applied bias terahertz even harmonic mixer of claim 1, characterized in that:
the voltage bias circuit (5) comprises a plate capacitor (16) connected with the negative electrode of the series T-shaped diode pair (2), the plate capacitor (16) is connected with a voltage stabilizing source (17), and the positive electrode of the series T-shaped diode pair (2) is grounded.
8. The low local oscillator drive applied bias terahertz even harmonic mixer of claim 7, characterized in that:
and a low-pass filter (18) is connected between the flat capacitor (16) and the voltage-stabilizing source (17).
9. The low local oscillator drive applied bias terahertz even harmonic mixer of claim 1, characterized in that:
the radio frequency transmission circuit (1), the series T-shaped diode pair (2), the local oscillator transmission circuit (3) and the mixing signal transmission circuit (4) are jointly integrated on a bearing substrate (19).
10. The low local oscillator drive applied bias terahertz even harmonic mixer of claim 9, characterized in that:
the carrier substrate (19) is a GaAs substrate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114447550A (en) * | 2022-01-12 | 2022-05-06 | 四川众为创通科技有限公司 | Terahertz miniaturized sub-harmonic mixer adopting symmetrical folding open-circuit branch sections |
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