CN107675177B - 一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法 - Google Patents
一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法 Download PDFInfo
- Publication number
- CN107675177B CN107675177B CN201710879567.4A CN201710879567A CN107675177B CN 107675177 B CN107675177 B CN 107675177B CN 201710879567 A CN201710879567 A CN 201710879567A CN 107675177 B CN107675177 B CN 107675177B
- Authority
- CN
- China
- Prior art keywords
- cabi
- film
- niooh
- preparation
- obtains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910002640 NiOOH Inorganic materials 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 150000001875 compounds Chemical class 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 101
- 239000010949 copper Substances 0.000 claims abstract description 40
- 238000004070 electrodeposition Methods 0.000 claims abstract description 33
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 12
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 239000008367 deionised water Substances 0.000 claims description 18
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 16
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 16
- 229910021641 deionized water Inorganic materials 0.000 claims description 16
- 239000003792 electrolyte Substances 0.000 claims description 16
- 229910052697 platinum Inorganic materials 0.000 claims description 16
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 16
- 238000005406 washing Methods 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 11
- 229910002651 NO3 Inorganic materials 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 8
- 235000011152 sodium sulphate Nutrition 0.000 claims description 8
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 7
- 238000003618 dip coating Methods 0.000 claims description 7
- 229960001484 edetic acid Drugs 0.000 claims description 7
- 239000004310 lactic acid Substances 0.000 claims description 7
- 235000014655 lactic acid Nutrition 0.000 claims description 7
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 238000013019 agitation Methods 0.000 claims description 5
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229940078494 nickel acetate Drugs 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- ZHJGWYRLJUCMRT-UHFFFAOYSA-N 5-[6-[(4-methylpiperazin-1-yl)methyl]benzimidazol-1-yl]-3-[1-[2-(trifluoromethyl)phenyl]ethoxy]thiophene-2-carboxamide Chemical compound C=1C=CC=C(C(F)(F)F)C=1C(C)OC(=C(S1)C(N)=O)C=C1N(C1=C2)C=NC1=CC=C2CN1CCN(C)CC1 ZHJGWYRLJUCMRT-UHFFFAOYSA-N 0.000 claims 2
- BDJYZEWQEALFKK-UHFFFAOYSA-N bismuth;hydrate Chemical compound O.[Bi] BDJYZEWQEALFKK-UHFFFAOYSA-N 0.000 claims 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 abstract description 2
- 229910018292 Cu2In Inorganic materials 0.000 abstract 1
- 229910000365 copper sulfate Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000002114 nanocomposite Substances 0.000 abstract 1
- 239000002105 nanoparticle Substances 0.000 abstract 1
- 238000013021 overheating Methods 0.000 abstract 1
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 12
- 230000007062 hydrolysis Effects 0.000 description 10
- 238000006460 hydrolysis reaction Methods 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 229960000935 dehydrated alcohol Drugs 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- PPNKDDZCLDMRHS-UHFFFAOYSA-N dinitrooxybismuthanyl nitrate Chemical class [Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PPNKDDZCLDMRHS-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/50—Processes
- C25B1/55—Photoelectrolysis
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
- C25B11/091—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of at least one catalytic element and at least one catalytic compound; consisting of two or more catalytic elements or catalytic compounds
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
本发明公开了用于光电催化水裂解的CaBi6O10‑Cu2O‑NiOOH三元复合薄膜材料的制备方法。首先通过溶胶凝胶法制备CaBi6O10溶胶;采用浸渍‑提拉法将制得的CaBi6O10溶胶涂覆在FTO玻璃基底,经过热处理,得到CaBi6O10薄膜;将已经生长CaBi6O10薄膜的试样放入硫酸铜电镀液中,经过电沉积后制得CaBi6O10‑Cu2O纳米阵列;采用电沉积方法将NiOOH纳米粒子沉积到CaBi6O10‑Cu2O纳米层上,得到CaBi6O10‑Cu2O‑NiOOH纳米复合材料。本发明所获得的CaBi6O10‑Cu2O‑NiOOH薄膜,经各种测试后,发现CaBi6O10的光吸收有所改善且光电催化性能有所提高。本发明提供的制备方法简单易操作,具有实际的可行性和工业应用前景,且制备的CaBi6O10‑Cu2O‑NiOOH薄膜成本低,无污染,光电催化性能良好。
Description
技术领域
本发明涉及材料制备技术领域,尤其是一种用于光电催化水裂解 CaBi6O10-Cu2O-NiOOH三元复合薄膜材料的制备方法。
背景技术
随着世界经济的快速发展和农村城市化进程的加快,能源消耗也在急剧增加,现在我们正面临着日益严峻的传统化石能源短缺问题和环境问题。为了摆脱这一困境,人们正在寻求可替代的“无碳”能源,如太阳能、核能、风能、地热能、水力发电、生物能等。太阳能由于其普遍、无害、巨大、长久等特性,使其具有大规模应用潜能。而光电催化水解产氢作为一种有效利用和储存太阳能的途径正受到人们的广泛关注。因为“无碳”和高燃值的氢能对于间歇性的太阳能是一种极好的载体,而且可直接用作发动机和燃料电池的燃料。在光电催化水解过程中,半导体光电极吸收适当能量的光子,发生光生电子跃迁,生成电子和空穴,并转移到光电极/电解质表面与水发生还原/氧化反应分别生成氢气/氧气。
氢气作为能源被使用后产物为水,这一过程实现了太阳能的清洁可持续的利用。因此利用半导体材料进行光电催化水解成为研究热点。
为提高光电转化效率,有效实现光电催化水解,半导体电极材料必须同时满足三个条件:①光响应范围足够宽,以充分利用太阳能;②光生电子空穴的分离和传输效率高,尽可能的提高太阳能转化效率;③材料耐久性好。自1972 年TiO2被用作光电催化水解首次报导以来,投入了大量的精力,致力于研究一种新型的可有效吸收可见光的光电极材料。CaBi6O10作为一种新型的光电极材料被首次用作光电催化水解,其禁带宽度约为2.3eV,可响应可见光,但光生电子 -空穴对易复合,导致光电转化效率低。因此为了对其进行针对性的改性,提高其光电转化效率,Cu2O被用来对CaBi6O10进行改性,以促进光生电子-空穴对分离。在此基础上,NiOOH因其空穴捕获和储存能力,可以进一步促进光生电子-空穴对的分离,提高CaBi6O10的光电转化效率及光电催化性能。
目前CaBi6O10在光电催化水解领域的应用很少,针对CaBi6O10改性的的不同功能层的研究还较少,所以有关CaBi6O10-Cu2O-NiOOH三元功能层体系的光电催化水解报导相对较少。因此目前关于CaBi6O10-Cu2O-NiOOH三元功能层体系的光电催化水解是一个值得探讨且具有很大潜力的研究课题。
发明内容
针对上述存在的问题,本发明的目的是提供一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法。
本发明的技术方案是:一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法,包括如下步骤:
步骤一:制备CaBi6O10薄膜
(1)配制CaBi6O10前驱体溶胶;
将硝酸钙[Ca(NO3)2·4(H2O)]和硝酸铋[Bi(NO3)3·5H2O]溶于去离子水中,搅拌,然后加入乙二胺四乙酸,搅拌后得到浅黄色透明溶液,用浓氨水调节溶液的pH 至7,即为CaBi6O10溶胶,将CaBi6O10溶胶静置数天,得到浅黄色透明CaBi6O10凝胶;
(2)采用浸渍提拉法均匀的将制得的CaBi6O10前驱体溶液涂覆基底上,热处理,制得CaBi6O10薄膜;
步骤二:制备CaBi6O10-Cu2O薄膜
(1)采用电沉积法在CaBi6O10薄膜上制备Cu2O薄膜;
将所述步骤一制备的CaBi6O10薄膜作为工作电极,铂片作为对电极, Ag/AgCl作为参比电极,电解液为硫酸铜和乳酸的混合液,电沉积数秒,得到薄膜;
(2)将步骤二中(1)制得的薄膜经过洗涤,干燥,得到CaBi6O10-Cu2O薄膜;
步骤三:制备CaBi6O10-Cu2O-NiOOH薄膜
(1)采用电沉积法在CaBi6O10-Cu2O薄膜上制备NiOOH薄膜;
将所述步骤二制得的CaBi6O10-Cu2O薄膜作为工作电极,铂片作对电极, Ag/AgCl为参比电极,电解液为乙酸镍和硫酸钠的混合液,电沉积处理;
(2)将步骤三(1)中制备的薄膜经过洗涤,干燥,得到CaBi6O10-Cu2O-NiOOH 薄膜。
进一步的,所述步骤一中的(1)的工艺参数为:
将0.3~0.6g硝酸钙[Ca(NO3)2·4(H2O)]和4~8g硝酸铋[Bi(NO3)3·5H2O]溶于50ml的去离子水中,50~60℃磁力搅拌10~20min,然后加入0.5~0.9g乙二胺四乙酸,80℃下恒温搅拌20~30min后得到浅黄色透明溶液,用浓氨水调节溶液的 pH至7,即为0.03~0.05mol·L-1的CaBi6O10溶胶。
将所述CaBi6O10溶胶静置7天,得到浅黄色透明CaBi6O10凝胶。
进一步的,所述步骤一中的(2)的工艺参数为:将所述步骤一(1)中制得的CaBi6O10溶胶用浸渍提拉法均匀的涂覆在FTO基底上,然后以2℃/min 升温至600℃,保温12h后自然冷却至室温,得到CaBi6O10薄膜。
进一步的,所述步骤二中(1)的工艺参数为:所述步骤一制备的CaBi6O10薄膜作为工作电极,铂片作为对电极,Ag/AgCl作为参比电极,电解液为0.1~0.2 mol·L-1硫酸铜和2~4mol·L-1乳酸的混合液,用5mol·L-1的氢氧化钠溶液将pH 调整为8~10,沉积工作电流为1.88mA/cm2,电沉积时间为20~30s。
进一步的,所述步骤二中的(2)的工艺参数为:将所述步骤二(1)电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在60℃下干燥 50~60min,得到CaBi6O10-Cu2O薄膜。
进一步的,所述步骤三中(1)的工艺参数为:所述步骤二制得的 CaBi6O10-Cu2O薄膜作为工作电极,铂片作对电极,Ag/AgCl为参比电极,电解液为0.1~0.2mol·L-1乙酸镍和0.2~0.4mol·L-1硫酸钠的混合液,沉积工作电流为0.39mA/cm2,电沉积时间为10~20min。
进一步的,所述步骤三中(2)的工艺参数为:将所述步骤三中(1)电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在60℃下干燥 20~30min,得到CaBi6O10-Cu2O-NiOOH薄膜。
与现有技术相比,本发明的有益效果是:
(1)本发明所获得的CaBi6O10-Cu2O-NiOOH薄膜,经各种测试后,发现 CaBi6O10的光响应范围与光吸收强度均有所改善且光电催化水解性能良好。
(2)本发明提供的制备方法简单易操作,具有实际的可行性,且制备的 CaBi6O10-Cu2O-NiOOH薄膜成本低,无污染,光电催化水解性能良好。
附图说明
图1为本发明的三元功能层CaBi6O10-Cu2O-NiOOH薄膜的电镜扫描图。
具体实施方式
在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”等仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,除非另有说明,“多个”的含义是两个或两个以上。
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以通过具体情况理解上述术语在本发明中的具体含义。
下面结合附图和实施例对本发明作进一步的说明。
一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法,包括如下步骤:
步骤一:制备CaBi6O10薄膜
(1)配制CaBi6O10前驱体溶胶;
将硝酸钙[Ca(NO3)2·4(H2O)]和硝酸铋[Bi(NO3)3·5H2O]溶于去离子水中,搅拌,然后加入乙二胺四乙酸,搅拌后得到浅黄色透明溶液,用浓氨水调节溶液的pH 至7,即为CaBi6O10溶胶,将CaBi6O10溶胶静置数天,得到浅黄色透明CaBi6O10凝胶;
(2)采用浸渍提拉法均匀的将制得的CaBi6O10前驱体溶液涂覆基底上,热处理,制得CaBi6O10薄膜;
步骤二:制备CaBi6O10-Cu2O薄膜
(1)采用电沉积法在CaBi6O10薄膜上制备Cu2O薄膜;
将所述步骤一制备的CaBi6O10薄膜作为工作电极,铂片作为对电极,Ag/AgCl作为参比电极,电解液为硫酸铜和乳酸的混合液,电沉积数秒,得到薄膜;
(2)将步骤二中(1)制得的薄膜经过洗涤,干燥,得到CaBi6O10-Cu2O薄膜;
步骤三:制备CaBi6O10-Cu2O-NiOOH薄膜
(1)采用电沉积法在CaBi6O10-Cu2O薄膜上制备NiOOH薄膜;
将所述步骤二制得的CaBi6O10-Cu2O薄膜作为工作电极,铂片作对电极,Ag/AgCl为参比电极,电解液为乙酸镍和硫酸钠的混合液,电沉积处理;
(2)将步骤三(1)中制备的薄膜经过洗涤,干燥,得到CaBi6O10-Cu2O-NiOOH 薄膜。
进一步的,所述步骤一中的(1)的工艺参数为:
将0.3~0.6g硝酸钙[Ca(NO3)2·4(H2O)]和4~8g硝酸铋[Bi(NO3)3·5H2O]溶于50ml的去离子水中,50~60℃磁力搅拌10~20min,然后加入0.5~0.9g乙二胺四乙酸,80℃下恒温搅拌20~30min后得到浅黄色透明溶液,用浓氨水调节溶液的 pH至7,即为0.03~0.05mol·L-1的CaBi6O10溶胶。
将所述CaBi6O10溶胶静置7天,得到浅黄色透明CaBi6O10凝胶。
进一步的,所述步骤一中的(2)的工艺参数为:将所述步骤一(1)中制得的CaBi6O10溶胶用浸渍提拉法均匀的涂覆在FTO基底上,然后以2℃/min 升温至600℃,保温12h后自然冷却至室温,得到CaBi6O10薄膜。
进一步的,所述步骤二中(1)的工艺参数为:所述步骤一制备的CaBi6O10薄膜作为工作电极,铂片作为对电极,Ag/AgCl作为参比电极,电解液为0.1~0.2 mol·L-1硫酸铜和2~4mol·L-1乳酸的混合液,用5mol·L-1的氢氧化钠溶液将pH 调整为8~10,沉积工作电流为1.88mA/cm2,电沉积时间为20~30s。
进一步的,所述步骤二中的(2)的工艺参数为:将所述步骤二(1)电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在60℃下干燥 50~60min,得到CaBi6O10-Cu2O薄膜。
进一步的,所述步骤三中(1)的工艺参数为:所述步骤二制得的 CaBi6O10-Cu2O薄膜作为工作电极,铂片作对电极,Ag/AgCl为参比电极,电解液为0.1~0.2mol·L-1乙酸镍和0.2~0.4mol·L-1硫酸钠的混合液,沉积工作电流为0.39mA/cm2,电沉积时间为10~20min。
进一步的,所述步骤三中(2)的工艺参数为:将所述步骤三中(1)电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在60℃下干燥 20~30min,得到CaBi6O10-Cu2O-NiOOH薄膜。
实施例1
步骤一:制备CaBi6O10薄膜
将0.35g硝酸钙[Ca(NO3)2·4(H2O)]和4.37硝酸铋[Bi(NO3)3·5H2O]溶于50ml 的去离子水中,50℃磁力搅拌10min,然后加入0.53g乙二胺四乙酸,80℃下恒温搅拌20min后得到浅黄色透明溶液,用浓氨水调节溶液的pH至7,即为 CaBi6O10溶胶。将CaBi6O10溶胶静置7天,得到浅黄色透明CaBi6O10凝胶。
用浸渍提拉法以5mm/s的速度将CaBi6O10溶胶均匀的涂覆在FTO基底上,然后以2℃/min升温至600℃,保温12h后自然冷却至室温,得到CaBi6O10薄膜。
步骤二:制备CaBi6O10-Cu2O薄膜
CaBi6O10薄膜作为工作电极,铂片作为对电极,Ag/AgCl作为参比电极,电解液为0.1mol·L-1硫酸铜和2.5mol·L-1乳酸的混合液,用5mol·L-1的氢氧化钠溶液将pH调整为10,沉积工作电流为1.88mA/cm2,电沉积时间为20s。
将电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在 60℃下干燥50min,得到CaBi6O10-Cu2O薄膜。
步骤三:制备CaBi6O10-Cu2O-NiOOH薄膜
CaBi6O10-Cu2O薄膜作为工作电极,铂片作对电极,Ag/AgCl为参比电极,电解液为0.13mol·L-1乙酸镍和0.23mol·L-1硫酸钠的混合液,沉积工作电流为 0.39mA/cm2,电沉积时间为20min。
将电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在 60℃下干燥20min,得到CaBi6O10-Cu2O-NiOOH薄膜。
实施例2
步骤一:制备CaBi6O10薄膜
将0.59g硝酸钙[Ca(NO3)2·4(H2O)]和7.28g硝酸铋[Bi(NO3)3·5H2O]溶于50ml 的去离子水中,60℃磁力搅拌20min,然后加入0.88g乙二胺四乙酸,80℃下恒温搅拌30min后得到浅黄色透明溶液,用浓氨水调节溶液的pH至7,即为 CaBi6O10溶胶。将CaBi6O10溶胶静置7天,得到浅黄色透明CaBi6O10凝胶。
用浸渍提拉法以5mm/s的速度将CaBi6O10溶胶均匀的涂覆在FTO基底上,然后以2℃/min升温至600℃,保温12h后自然冷却至室温,得到CaBi6O10薄膜。
步骤二:制备CaBi6O10-Cu2O薄膜
CaBi6O10薄膜作为工作电极,铂片作为对电极,Ag/AgCl作为参比电极,电解液为0.2mol·L-1硫酸铜和4mol·L-1乳酸的混合液,用5mol·L-1的氢氧化钠溶液将pH调整为9,沉积工作电流为1.88mA/cm2,电沉积时间为30s。
将电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在 60℃下干燥60min,得到CaBi6O10-Cu2O薄膜。
步骤三:制备CaBi6O10-Cu2O-NiOOH薄膜
CaBi6O10-Cu2O薄膜作为工作电极,铂片作对电极,Ag/AgCl为参比电极,电解液为0.2mol·L-1乙酸镍和0.4mol·L-1硫酸钠的混合液,沉积工作电流为0.39 mA/cm2,电沉积时间为15min。
将电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在 60℃下干燥30min,得到CaBi6O10-Cu2O-NiOOH薄膜。
本发明的作用机理是:当CaBi6O10和Cu2O被光照后吸收的光子能量等于或者大于其各自的禁带宽度时,其各自价带上的电子会被激发跃迁至其各自的导带上,从而在以前的电子位置上留下光生空穴,产生电子-空穴对。CaBi6O10和 Cu2O的电子空穴会被NiOOH捕获,从而促进了光生电子-空穴对的分离。光生电子具有很强的还原能力,到达半导体催化剂表面会促进水分解产生氢气。
以上述依据本发明的理想实施例为启示,通过上述的说明内容,相关工作人员完全可以在不偏离本项发明技术思想的范围内,进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容,必须要根据权利要求范围来确定其技术性范围。
Claims (7)
1.一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法,其特征在于,包括如下步骤:
步骤一:制备CaBi6O10薄膜
(1)配制CaBi6O10前驱体溶胶;
将四水合硝酸钙[Ca(NO3)2·4(H2O)]和五水合硝酸铋[Bi(NO3)3·5H2O]溶于去离子水中,搅拌,然后加入乙二胺四乙酸,搅拌后得到浅黄色透明溶液,用浓氨水调节溶液的pH至7,即为CaBi6O10溶胶,将CaBi6O10溶胶静置数天,得到浅黄色透明CaBi6O10溶胶;
(2)采用浸渍提拉法均匀的将制得的CaBi6O10前驱体溶胶涂覆基底上,热处理,制得CaBi6O10薄膜;
步骤二:制备CaBi6O10-Cu2O薄膜
(1)采用电沉积法在CaBi6O10薄膜上制备Cu2O薄膜;
将所述步骤一制备的CaBi6O10薄膜作为工作电极,铂片作为对电极,Ag/AgCl作为参比电极,电解液为硫酸铜和乳酸的混合液,电沉积得到薄膜;
(2)将步骤二中(1)制得的薄膜经过洗涤,干燥,得到CaBi6O10-Cu2O薄膜;
步骤三:制备CaBi6O10-Cu2O-NiOOH薄膜
(1)采用电沉积法在CaBi6O10-Cu2O薄膜上制备NiOOH薄膜;
将所述步骤二制得的CaBi6O10-Cu2O薄膜作为工作电极,铂片作对电极,Ag/AgCl为参比电极,电解液为乙酸镍和硫酸钠的混合液,电沉积处理;
(2)将步骤三(1)中制备的薄膜经过洗涤,干燥,得到CaBi6O10-Cu2O-NiOOH薄膜。
2.根据权利要求1所述的一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法,其特征在于,所述步骤一中的(1)的工艺参数为:
将0.3~0.6g四水合硝酸钙[Ca(NO3)2·4(H2O)]和4~8g五水合硝酸铋[Bi(NO3)3·5H2O]溶于50ml的去离子水中,50~60℃磁力搅拌10~20min,然后加入0.5~0.9g乙二胺四乙酸,80℃下恒温搅拌20~30min后得到浅黄色透明溶液,用浓氨水调节溶液的pH至7,即为0.03~0.05mol·L-1的CaBi6O10溶胶;
将所述CaBi6O10溶胶静置7天,得到浅黄色透明CaBi6O10凝胶。
3.根据权利要求1所述的一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法,其特征在于,所述步骤一中的(2)的工艺参数为:将所述步骤一(1)中制得的CaBi6O10溶胶用浸渍提拉法均匀的涂覆在FTO基底上,然后以2℃/min升温至600℃,保温12h后自然冷却至室温,得到CaBi6O10薄膜。
4.根据权利要求1所述的一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法,其特征在于,所述步骤二中(1)的工艺参数为:所述步骤一制备的CaBi6O10薄膜作为工作电极,铂片作为对电极,Ag/AgCl作为参比电极,电解液为0.1~0.2mol·L-1硫酸铜和2~4mol·L-1乳酸的混合液,用5mol·L-1的氢氧化钠溶液将pH调整为8~10,沉积工作电流为1.88mA/cm2,电沉积时间为20~30s。
5.根据权利要求1所述的一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法,其特征在于,所述步骤二中的(2)的工艺参数为:将所述步骤二(1)电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在60℃下干燥50~60min,得到CaBi6O10-Cu2O薄膜。
6.根据权利要求1所述的一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法,其特征在于,所述步骤三中(1)的工艺参数为:所述步骤二制得的CaBi6O10-Cu2O薄膜作为工作电极,铂片作对电极,Ag/AgCl为参比电极,电解液为0.1~0.2mol·L-1乙酸镍和0.2~0.4mol·L-1硫酸钠的混合液,沉积工作电流为0.39mA/cm2,电沉积时间为10~20min。
7.根据权利要求1所述的一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法,其特征在于,所述步骤三中(2)的工艺参数为:将所述步骤三中(1)电沉积得到的薄膜分别在无水乙醇和去离子水中反复洗涤多次,然后在60℃下干燥20~30min,得到CaBi6O10-Cu2O-NiOOH薄膜。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710879567.4A CN107675177B (zh) | 2017-09-26 | 2017-09-26 | 一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710879567.4A CN107675177B (zh) | 2017-09-26 | 2017-09-26 | 一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107675177A CN107675177A (zh) | 2018-02-09 |
CN107675177B true CN107675177B (zh) | 2019-08-23 |
Family
ID=61137406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710879567.4A Expired - Fee Related CN107675177B (zh) | 2017-09-26 | 2017-09-26 | 一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107675177B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109750313B (zh) * | 2019-03-26 | 2020-07-24 | 新乡学院 | 铋酸钙/氧化钨复合光电极、制备方法及其在光电催化分解水中的应用 |
CN109772381B (zh) * | 2019-03-26 | 2021-07-02 | 河南科技学院 | 基于fto表面的卤氧化铋/铋酸钙复合材料、制备方法及在光催化降解水体中染料的应用 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0859344A (ja) * | 1994-08-24 | 1996-03-05 | Murata Mfg Co Ltd | 誘電体磁器組成物 |
CN101767001A (zh) * | 2009-01-01 | 2010-07-07 | 中国石油大学(北京) | 一种软化学-水热技术合成新型Ca-Bi-O系可见光催化剂的方法 |
PT104692B (pt) * | 2009-07-29 | 2013-06-18 | Univ Do Minho | Revestimento fotocatalitico para libertação controlada de agentes voláteis |
CN103088343B (zh) * | 2013-01-15 | 2016-08-10 | 西安理工大学 | Cu2O/TiO2纳米复合薄膜的制备方法 |
CN106158408B (zh) * | 2016-07-25 | 2018-06-19 | 合肥工业大学 | 一种NiOOH@CuO/Cu2O复合纳米片阵列薄膜及其制备方法和应用 |
-
2017
- 2017-09-26 CN CN201710879567.4A patent/CN107675177B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN107675177A (zh) | 2018-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100517772C (zh) | 量子点敏化太阳能电池电极及其制备方法 | |
CN101916670B (zh) | 一种TiO2纳米花薄膜光阳极及其制备方法 | |
CN101702377A (zh) | 一种氧化锌/二氧化钛杂化电极及其制备方法 | |
CN103000381B (zh) | 一种制备ZnO/CuInS2核壳结构纳米棒薄膜的方法 | |
CN102268706A (zh) | 制备ZnO/Cu2O异质结材料及ZnO/Cu2O三维结构异质结太阳电池的方法 | |
CN102723208B (zh) | 一维氧化锌-二氧化钛核壳结构复合纳米线阵列的制备方法 | |
CN102162127A (zh) | 一种垂直于基底生长的金红石单晶超细二氧化钛纳米线阵列的制备方法 | |
CN101976611A (zh) | TiO2纳米线阵列薄膜光阳极及其制备方法 | |
CN103871750B (zh) | 锐钛矿TiO2纳米树状阵列及其在太阳能电池制备中的应用 | |
CN102153138A (zh) | 一种基于纳米棒和纳米颗粒组成的分等级二氧化钛微米球 | |
CN102231332A (zh) | 基于二氧化钛纳米棒阵列薄膜的柔性染料敏化太阳电池及其制备方法 | |
CN104167293B (zh) | 一种染料敏化太阳能电池光阳极及其制备方法 | |
CN106169537A (zh) | 一种太阳能电池的制备方法 | |
CN102637530B (zh) | 不锈钢丝上纳米结构Zn2SnO4制备方法和用途 | |
CN104576074A (zh) | 一种超长TiO2纳米线阵列薄膜光阳极的制备方法 | |
CN107675177B (zh) | 一种CaBi6O10-Cu2O-NiOOH三元复合薄膜的制备方法 | |
CN102637777A (zh) | 一种太阳电池光吸收层Cu2O纳米薄膜的化学制备工艺 | |
CN106328381A (zh) | 一种全固态量子点敏化太阳能电池及其制备方法 | |
CN102324316A (zh) | 一种复合光阳极及其制备方法 | |
CN102254704A (zh) | 染料敏化贵金属沉积二氧化钛光阳极及其制备方法 | |
CN112934233B (zh) | 复合光催化剂及其制备方法和应用 | |
CN103366961A (zh) | 一种掺杂的二氧化钛及其制备方法、染料敏化太阳能电池 | |
CN102795665B (zh) | 二氧化钛纳米管(杆)阵列的制备方法 | |
CN102013341A (zh) | 一种双螺旋结构的染料敏化太阳能电池的制备方法 | |
CN107604344A (zh) | 一种用于光电催化的CaBi2O4薄膜电极的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190823 |