CN107665841A - 基板处理系统 - Google Patents
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Abstract
公开了一种基板处理系统。所述基板处理系统包括具有端口和索引机械手的索引单元,容纳基板的容器位于所述端口上;工艺执行单元,所述工艺执行单元具有用于处理基板的基板处理装置和用于转移基板的主传送机械手;和缓冲单元,所述缓冲单元布置在工艺执行单元和索引单元之间,并且在工艺执行单元和索引单元之间传送的基板暂时停留在所述缓冲单元中。索引机械手、基板处理装置、主传送机械手和缓冲单元中的每一个都包括与基板相接触以去除基板静电的导电部。
Description
技术领域
本文描述的发明构思的实施例涉及一种基板处理系统。
背景技术
基板表面上的污染物,诸如颗粒、有机污染物和金属污染物,极大地影响了器件的品质和产率。因此,去除附着在基板表面的各种污染物或多余膜的清洗工艺是非常重要的,所以在制造半导体的单元工艺之前和之后进行清洗基板的工艺。
在当前半导体制造工艺中使用的清洗方法主要分为干洗和湿洗,而湿洗分为批量型和单晶片型,批量型通过将基板浸入在化学品中通过化学溶液去除污染物,单晶片型在基板被放置在旋转卡盘上之后被旋转时,通过将化学品供应到基板的表面上来去除污染物。
当基板高速旋转时,单晶片型清洗装置将处理液、去离子水和干燥气体供应到基板上,并且处理液、去离子水和干燥气体由于与基板表面的摩擦而产生静电。
为了解决由于静电所导致的静电电荷和电场的不均匀,离子发生器位于在其中执行各种工艺的工艺腔室的内部。然而,传统的离子发生器实际上并不能通过去除在其中执行工艺的广泛区域中的静电或带电粒子而有效地去除基板上的静电。
此外,在去除静电的另一种方法中,通过在基板接触点使用导电材料来去除在工艺期间产生的静电和留存的静电。然而,虽然工艺中产生的大量静电通过导电材料释放到外部,但一旦特定量的静电被释放,就不会再进一步释放静电。
[现有技术文献]
[专利文献]
韩国专利申请公开号10-2012-0008854(2012年2月1日)。
发明内容
本发明构思的实施例提供了一种基板处理装置,该基板处理装置可分阶段地去除基板上的静电。
本发明构思的实施例还提供了一种基板处理装置,该基板处理装置可提高基板上静电的去除效果。
本发明构思的目的并不限于以上所述目的。本发明构思所属领域的技术人员将从下面的描述中清楚地了解未提及的其它技术目的。
根据本发明构思的一个方面,提供了一种基板处理系统,该基板处理系统包括:索引单元,所述索引单元具有端口和索引机械手,容纳基板的容器位于所述端口上;工艺执行单元,所述工艺执行单元具有用于处理所述基板的基板处理装置和用于转移所述基板的主传送机械手;和缓冲单元,所述缓冲单元布置在所述工艺执行单元和所述索引单元之间,并且在所述工艺执行单元和所述索引单元之间传送的基板暂时停留在所述缓冲单元中,其中所述索引机械手、所述基板处理装置、所述主传送机械手和所述缓冲单元中的每一个都包括与所述基板相接触以去除所述基板静电的导电部。
所述索引机械手的导电部、所述基板处理装置的导电部、所述主传送机械手的导电部和所述缓冲单元的导电部可由具有不同表面电阻的导电材料形成。
所述基板处理装置、所述主传送机械手、所述缓冲单元和所述索引机械手的导电部的表面电阻可依次降低,使得所述基板处理装置、所述主传送机械手、所述缓冲单元和所述索引机械手的静电去除能力依次增加。
每个基板处理装置可具有放置基板的基板支撑构件。所述基板支撑构件可具有与所述基板相接触的第一导电部,并且所述第一导电部由表面电阻为10^6Ω/sq的导电材料形成。所述主传送机械手可具有放置基板的第一叶片,所述第一叶片具有与所述基板相接触的第二导电部,并且所述第二导电部由表面电阻为10^5Ω/sq的导电材料形成。所述缓冲单元可具有放置基板的插槽,所述插槽可具有与所述基板相接触的第三导电部,并且所述第三导电部可由表面电阻为10^4Ω/sq的导电材料形成。所述索引机械手可具有放置基板的第二叶片,所述第二叶片可具有与所述基板相接触的第四导电部,并且所述第四导电部可由表面电阻为10^3Ω/sq的导电材料形成。
附图说明
从参考以下附图进行的以下描述中,以上所述的和其它的目的、特征将变得显而易见,其中贯穿不同的附图,相同的附图标记表示相同的部件,除非另有说明,其中:
图1是示意性地示出了根据本发明的基板处理系统的俯视图;
图2是示出了根据本发明的单晶片型基板处理装置的结构的俯视图;
图3是示出了图2的基板处理装置的结构的侧视图;并且
图4示出了与基板相接触的单元的导电部的视图。
具体实施方式
本发明可进行各种修改并可具有各种形式,并且本发明的具体实施例将在附图中示出并详细描述。然而,本发明不限于特定的公开形式,而应当理解的是,本发明的范围包括与本发明的精神和技术范围有关的所有变化及其等同物或替代物。将省略与本发明相关的已知技术的详细描述,以避免使本发明的技术本质不清楚。
本文使用的术语仅用于描述具体实施例,并不试图对本发明进行限制。单数形式的术语可包括复数形式,除非另有规定。术语“包括”和“具有”用于表示在说明书中描述的特征、数量、步骤、操作、元件、部件或它们的组合存在,并可理解为可添加一个或多个其他的特征、数量、步骤、操作、元件、部件或它们的组合。
诸如“第一”和“第二”的术语可用于描述不同的元件,但这些元件并不限于这些术语。这些术语可仅用于将一个元素和另一个元素进行区分。
在下文中,将参照附图描述本发明的实施例,并且在本发明的描述中,不管附图标记如何,相同的附图标记被给予相同或相似的元件,并且对它们重复的描述将省略。
图1是示意性地示出了根据本发明的基板处理系统的俯视图。
参见图1,根据本发明的基板处理系统1000可包括索引单元10和工艺执行单元20。索引单元10和工艺执行单元20排列成一行。在下文中,将索引单元10和工艺执行单元20所排列的方向称为第一方向1,将从顶部观察时垂直于第一方向1的方向称为第二方向2,并且将与包含第一方向1和第二方向2的平面相垂直的方向称为第三方向3。
索引单元10沿第一方向1布置在基板处理系统1000的前部。索引单元10包括传输框架14和多个装载端口12。
容纳基板W的载体11位于装载端口12。设置有多个装载端口12并且这多个装载端口12沿着第二方向2排列成一行。然而,装载端口12的数量可根据基板处理系统1000的工艺效率或占地面积状况而增加或减少。可使用前开式晶圆盒(FOUP)作为载体11。载体11具有多个用于容纳基板的插槽,同时基板平行于地面布置。
传输框架14布置为在第一方向上与装载端口12相邻。传输框架14布置在装载端口12和工艺执行单元20的缓冲单元30之间。传输框架14包括索引导轨15和索引机械手16。索引机械手16位于索引导轨15上。索引机械手16将基板W在缓冲单元30和载体11之间传送。索引机械手16在第二方向2上沿着索引导轨15线性移动,或者绕第三方向3旋转。
工艺执行单元20沿着第一方向1布置在基板处理系统1000的后部,并与索引单元10相邻。工艺执行单元20包括缓冲单元30、移动路径40、主传送机械手50和基板处理装置60。
缓冲单元30沿着第一方向1布置在工艺执行单元20的前面。缓冲单元30是基板W被临时接收之后且被在基板处理装置60和载体11之间传送之前停留的空间。在缓冲单元30中设置有插槽(参见图4),基板W放置在插槽中,并且多个插槽沿着第三方向3彼此间隔开设置。
移动路径40布置成与缓冲单元30相对应。移动路径40的长度方向平行于第一方向。移动路径40提供主传送机械手50从中移动通过的通道。基板处理装置60沿着第一方向1布置在移动路径40的相对侧彼此面对。主传送机械手50沿着第一方向1通过移动路径40移动,并且安装有移动导轨,主传送机械手50可沿着该移动导轨升降到基板处理装置60的上部和下部以及缓冲单元30的上部和下部。
主传送机械手50安装在移动路径40中,并在基板处理装置60和缓冲单元30之间,或者在多个基板处理装置60之间传送基板W。主传送机械手50在第一方向1上沿移动路径40线性移动,或者绕第三方向3旋转。
基板处理装置60设置有多个,并沿着第一方向1布置在移动路径40的相对两侧上。一些基板处理装置60沿着移动路径40的长度方向布置。此外,一些基板处理装置60被彼此堆叠布置。也就是说,具有A乘B阵列的基板处理装置60可布置在移动路径40的一侧。此处,A是沿着第一方向1设置成一排的基板处理装置60的数量,B是沿着第三方向3设置成一排的基板处理装置60的数量。当在移动路径40的一侧上设置四个或六个基板处理装置60时,基板处理装置60可布置成2×2或3×2的阵列。基板处理装置60的数量可增加或减少。不同的是,基板处理装置60可仅设置在移动路径40的一侧。此外,与前述不同的是,基板处理装置60可单层设置在移动路径40的一侧或相对两侧上。
基板处理装置60可在基板W上进行清洗工艺。基板处理装置60可根据清洗工艺的类型而具有不同的结构。或者,基板处理装置60们可具有相同的结构。可选地,基板处理装置60被分成多个组,使得属于相同组的基板处理装置60的结构相同,并且属于不同组的基板处理装置60的结构不同。例如,当基板处理装置60分为两组时,属于第一组的基板处理装置60可设置在移动路径40的一侧,而属于第二组的基板处理装置60可设置在移动路径40的相对侧。可选地,属于第一组的基板处理装置60和属于第二组的基板处理装置60可分别设置在移动路径40相对侧的上层和下层。第一组基板处理装置60和第二组基板处理装置60可根据所使用的化学品的种类或清洗方法的类型来进行分类。不同的是,第一组基板处理装置60和第二组基板处理装置60可对一个基板W顺序执行工艺。
图2是示出了根据本发明的单晶片型基板处理装置的结构的俯视图。图3是示出了图2的基板处理装置中的处理容器和基板支撑构件的剖视图。
虽然已经作为示例在本实施例中描述了由单晶片型基板处理装置1处理的基板是半导体基板,但是本发明并不限于此,而是可应用于诸如液晶显示装置或玻璃基板的各种基板。
参见图2和图3,根据本发明的基板处理装置60是通过使用各种处理液去除基板表面上的异物和多余膜的装置,该装置包括腔室62、处理容器100、基板支撑构件200、第一摆动喷嘴单元300、固定喷嘴500、第二摆动喷嘴单元700和排气构件400。
腔室62提供密闭的内部空间,并且在腔室62的顶部安装有风机过滤单元63。风机过滤单元63在腔室62的内部产生竖向气流。
风机过滤单元63是将过滤器和供气风扇集成到一个单元中的模块,并且是用于过滤新鲜空气并将过滤后的空气供应到腔室中的装置。洁净空气通过风机过滤单元63并被供应到腔室62的内部以形成竖向气流。空气的竖向气流向基板上提供均匀的气流,并且在处理液对基板表面进行处理的过程中产生的污染物(废气)与这些空气一起,通过处理容器100的吸气管排出到排气构件400从而被去除,使得处理容器的内部保持高洁净度。
腔室62通过水平分隔件64被分成工艺区域66和维护区域68。维护区域68为一个空间,该空间内除了连接到处理容器100的排出管线141、143和145以及子排气管线410之外,还设置有升降单元的驱动器、第一摆动喷嘴单元300的驱动器300b和供应管线,尽管附图中仅示出了其中一些。优选的是,维护区域68与于其中处理基板的工艺区域相隔开。
处理容器100具有敞口型的圆筒形状,并且提供用于处理基板W的工艺空间。处理容器100开口的上表面被设置为基板W被载入/载出的通道。基板支撑构件200位于处理容器100的内部。在工艺期间,基板支撑构件200支撑基板W并使基板W旋转。
参见图3,处理容器100提供旋转头210所在的上部空间132a和通过旋转头210与上部空间132a区分开的下部空间132b,其中排气管190连接到下部空间132b的下端从而可强制进行排气。以多级式布置的、用于引导和吸入在旋转基板上溅射的处理液、气体和废气的第一环形吸入管110、第二环形吸入管120和第三环形吸入管130设置在处理容器100的上部空间132a中。第一环形吸入管110、第二环形吸入管120和第三环形吸入管130中的每一个都具有与共同的环形空间(对应于容器的下部空间)相连通的排气孔H。连接到排气构件400的排气管190设置在下部空间132b中。
具体地,第一至第三吸入管110、120和130中的每一个都包括具有环形形状的底面和从底面延伸并具有圆筒形形状的侧壁。第二吸入管120围绕第一吸入管110,并与第一吸入管110间隔开。第三吸入管130围绕第二吸入管120,并与第二吸入管120间隔开。
第一至第三吸入管110、120和130提供第一至第三回收空间RS1、RS2和RS3,从基板W溅射的处理液和含有废气的气体被引入到回收空间RS1、RS2和RS3中。第一回收空间RS1由第一吸入管110限定,第二回收空间RS2由第一吸入管110和第二吸入管120之间的空间限定,第三回收空间RS3由第二吸入管120和第三吸入管130之间的空间限定。
第一至第三吸入管110、120和130的上表面的中心是开口的,并具有倾斜表面,该倾斜表面与底面的距离从侧壁到开口逐渐增大。因此,从基板W溅射的处理液沿着第一至第三吸入管110、120和130的上表面流入回收空间RS1、RS2和RS3中。
被引入第一回收空间RS1的第一处理液通过第一回收管线145排出到外部。被引入第二回收空间RS2的第二处理液通过第二回收管线143排出到外部。被引入第三回收空间RS3的第三处理液通过第三回收管线141排出到外部。
同时,处理容器100联接到升降单元600,升降单元600改变处理容器100的竖向位置。升降单元600使容器100向上及向下线性移动。当容器100向上及向下移动时,容器100与旋转头210的相对高度改变。处理容器100下降,使得当基板W被装载在旋转头210上或从旋转头210卸载时,旋转头210突出到处理容器100的上侧。
当执行工艺时,调节容器100的高度,从而根据供应到基板W的处理液的种类,将处理液引入吸入管110、120和130中。因此,处理容器100和基板W之间的相对竖向位置是变化的。因此,处理容器100可以使回收空间RS1、RS2和RS3回收的处理液和污染气体的种类不同。
在本实施例中,基板处理装置60竖向移动处理容器100,以改变处理容器100和基板支撑构件200之间的相对竖向位置。然而,基板处理装置60可竖向地移动基板支撑构件200,以改变处理容器100和基板支撑构件200之间的相对竖向位置。
基板支撑构件200安装在处理容器100的内部。基板支撑构件200可在工艺期间支撑基板W,并可在工艺期间由驱动器230驱动旋转,这些将在下面进行描述。基板支撑构件200具有:有圆形上表面的旋转头210、支撑基板W的支撑销212和设置在旋转头210上表面上的卡盘销214。支撑销212以特定的阵列在旋转头210的上表面的周边彼此间隔开布置,并从旋转头210向上突出。支撑销212支撑基板W的下表面,使得当基板W向上离开旋转头210时,基板W被支撑。卡盘销214布置在支撑销212的外侧上并向上突出。卡盘销214对基板W进行布置,使得由多个支撑销212支撑的基板W可定位在旋转头210上的适当位置。在工艺中,卡盘销214与基板W的侧边接触以避免基板W偏离正确的位置。
支撑旋转头210的支撑轴220连接到旋转头210的下侧,并且支撑轴220由连接到支撑轴220下端的驱动器230旋转。驱动器230可以是电动机等。当支撑轴220旋转时,旋转头210和基板W被旋转。
排气构件400在工艺期间向第一至第三吸入管110、120和130提供排气压力(吸入压力)。排气构件400包括阻尼器420和连接到排气管190的子排气管线410。子排气管线410从排气泵(未示出)接收排气压力,并且子排气管线410连接到埋在半导体生产线(制造设施)的底部空间的主排气管线。
固定喷嘴单元500固定地安装在处理容器100的上端,并将超纯水、臭氧水和氮气供应到基板的中心。
在该实施例中,第一摆动喷嘴单元和第二摆动喷嘴单元可为处理液喷射单元。
第二摆动喷嘴单元700摆动至基板中心的上侧将用于干燥基板的流体供应到基板上。用于干燥的流体可包括异丙醇和高温氮气。
第一摆动喷嘴单元300位于处理容器100的外部。第一摆动喷嘴单元300通过悬臂摆动而旋转,并且将用于清洗或蚀刻基板的处理液(酸性液体、碱性液体、中性液体和干燥气体)供应到位于旋转头210上的基板W。如图2所示,可以看出,由于多个第一摆动喷嘴单元300平行布置并且各第一摆动喷嘴单元300与处理容器100的距离不同,所以各第一摆动喷嘴单元300的长度根据其旋转半径而不同。
第一摆动喷嘴单元300中的每一个可包括支撑轴310、驱动器320、喷嘴支撑件330和喷嘴340。支撑轴310的长度方向是第三方向,并且支撑轴310的下端连接到驱动器320。驱动器320旋转并升高支撑轴310。喷嘴支撑件330垂直连接到支撑轴310的与连接到驱动器320的端部相反的端部。喷嘴340安装在喷嘴支撑件330的端部的底面上。喷嘴340通过驱动器320移动到工艺位置和待机位置。工艺位置是喷嘴340布置在基板中心的竖向上方的位置,并且是喷嘴340脱离基板上侧的位置。
同时,在基板处理系统1000中,基板W与索引机械手16、缓冲单元30、主传送机械手50和基板处理装置的旋转头210接触,并且与基板接触的每个单元(索引机械手、基板处理装置、主传送机械手和缓冲单元)包括用于去除基板静电的导电部件。
参见图4,旋转头210可包括第一导电部213。第一导电部213可设置在支撑销212中并与基板接触,或者整个支撑销212可由导电材料形成。
主传送机械手50可具有放置基板的第一叶片52,并且第一叶片52可包括与基板相接触的第二导电部54。
缓冲单元30可具有放置基板的插槽32,并且插槽可包括与基板底面相接触的第三导电部34。
索引机械手16可具有放置基板的第二叶片17,第二叶片17可包括与基板相接触的第四导电部18。
第一导电部213、第二导电部54、第三导电部34和第四导电部18可由具有不同表面电阻的导电材料形成。也就是说,第一导电部213、第二导电部54、第三导电部34和第四导电部18可具有这样的表面电阻:使得静电去除能力可按照基板处理装置60、主传送机械手50、缓冲单元30和索引机械手16的顺序依次增加。同时,导电部被连接到接地线,以将基板的静电释放到外部。
作为示例,第一导电部213可包括具有10^6Ω/sq表面电阻的导电材料(碳(30%)聚醚醚酮),第二导电部54可包括具有10^5Ω/sq表面电阻的导电材料(碳(50%)聚醚醚酮),第三导电部34可包括具有10^4Ω/sq表面电阻的导电材料(纳米碳聚醚醚酮),第四导电部18可包括具有10^3Ω/sq表面电阻的导电材料(铝)。
同时,导电部213、54、34和18中的每一个可包括散热板结构以增加静电去除能力,并且接触点的数量可从四个增加到六个。
采用这种方式,从旋转头210开始通过顺序增加的导电性来分阶段地去除静电,当关键尺寸为90μm的基板的残留静电降至100V/cm以下,以及关键尺寸为14μm的基板的残留静电降至15V/cm以下时,瞬时电荷差导致的图案损伤可降低。根据本发明的实施例,由瞬时电荷差导致的图案损伤可通过分阶段地去除基板静电的方式来避免。
根据本发明的实施例,去除基板静电的效果可加强。
本发明的效果不限于上述效果,并且本发明所属技术领域的技术人员可从说明书和附图中清楚地了解未提及的效果。
以上描述是本发明的技术精神的简单示例,并且可在不脱离本发明的本质特征的情况下由本发明所属领域的技术人员进行各种修正和修改。因此,本发明的公开实施例不限制本发明的技术精神,而是说明性的,并且本发明的技术精神的范围不受本发明的实施例的限制。本发明的范围应由权利要求来解释,并且应当理解,在等同范围内的所有技术精神都在本发明的范围内。
Claims (4)
1.一种基板处理系统,其特征在于,包括:
索引单元,所述索引单元具有端口和索引机械手,容纳基板的容器位于所述端口上;
工艺执行单元,所述工艺执行单元具有用于处理所述基板的基板处理装置和用于转移所述基板的主传送机械手;和
缓冲单元,所述缓冲单元布置在所述工艺执行单元和所述索引单元之间,并且在所述工艺执行单元和所述索引单元之间传送的基板暂时停留在所述缓冲单元中,
其中,所述索引机械手、所述基板处理装置、所述主传送机械手和所述缓冲单元中的每一个包括与所述基板相接触以去除所述基板的静电的导电部。
2.根据权利要求1所述的基板处理系统,其特征在于,所述索引机械手的导电部、所述基板处理装置的导电部、所述主传送机械手的导电部和所述缓冲单元的导电部由具有不同表面电阻的导电材料形成。
3.根据权利要求1所述的基板处理系统,其特征在于,所述基板处理装置、所述主传送机械手、所述缓冲单元和所述索引机械手的导电部的表面电阻依次降低,使得所述基板处理装置、所述主传送机械手、所述缓冲单元和所述索引机械手的静电去除能力依次增加。
4.根据权利要求1所述的基板处理系统,其特征在于,每个所述基板处理装置具有放置基板的基板支撑构件,
其中所述基板支撑构件具有与所述基板相接触的第一导电部,并且所述第一导电部由表面电阻为10^6Ω/sq的导电材料形成,
其中所述主传送机械手具有放置基板的第一叶片,所述第一叶片具有与所述基板相接触的第二导电部,并且所述第二导电部由表面电阻为10^5Ω/sq的导电材料形成,
其中所述缓冲单元具有放置基板的插槽,所述插槽具有与所述基板相接触的第三导电部,并且所述第三导电部由表面电阻为10^4Ω/sq的导电材料形成,并且
其中所述索引机械手具有放置基板的第二叶片,所述第二叶片具有与所述基板相接触的第四导电部件,并且所述第四导电部件由表面电阻为10^3Ω/sq的导电材料形成。
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US20180033661A1 (en) | 2018-02-01 |
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