CN107664780A - Dielectric nano brick array structure and its application as high-reflecting film and high transmittance film - Google Patents
Dielectric nano brick array structure and its application as high-reflecting film and high transmittance film Download PDFInfo
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- CN107664780A CN107664780A CN201710942306.2A CN201710942306A CN107664780A CN 107664780 A CN107664780 A CN 107664780A CN 201710942306 A CN201710942306 A CN 201710942306A CN 107664780 A CN107664780 A CN 107664780A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
Abstract
The invention discloses a kind of dielectric nano brick array structure and its application as high-reflecting film and high transmittance film, the dielectric nano brick array structure, including the dielectric nano brick array on substrate and substrate；Wherein, dielectric nano brick array is made up of dielectric nano brick periodic arrangement；Dielectric nano brick is four-prism shape, and its bottom surface is square, and its length, width and height is sub-wavelength dimensions.When the dielectric nano brick array structure is used as into high-reflecting film, optimize the structural parameters of dielectric nano brick array structure so that s ripples and can produce Mie resonance during p ripple incidences under operation wavelength；When the dielectric nano brick array structure is used as into high transmittance film, optimize the structural parameters of dielectric nano brick array structure so that the equivalent refractive index of mixed layer is between the refractive index and refractive index of substrate of mixed layer surrounding medium.High-reflecting film and high transmittance film of the present invention based on dielectric nano brick array structure are respectively provided with higher operating efficiency in whole communication band.
Description
Technical field
The invention belongs to Application Optics field, more particularly to a kind of dielectric nano brick array structure and its as high-reflecting film
With the application of high transmittance film.
Background technology
At present, anti-reflection film and Anti-reflective coating mainly use optically transparent medium film production, i.e., are existed using Physical and chemical method
Coating transparent dielectric film on the smooth surface of glass or metal, utilize reflection, refraction and superposition of the light wave in transparent dielectric film
To realize anti-reflection or increase anti-.As needed, high transmittance film and high-reflecting film are generally divided into single deielectric-coating, double deielectric-coating or multimedium
Film.The high transmittance film of multimedium membranous type, high-reflecting film effect are relatively preferable, generally use magnesium fluoride, titanium oxide, vulcanized lead, lead selenide
Prepared Deng material.For high transmittance film, due to being limited by Refractive Index of Material, therefore Coating Materials is more rare, magnesium fluoride
It is most preferably to prepare material, but the shortcomings of resource scarcity, cost is high is present.
Tradition is using optically transparent medium film production high transmittance film, there are the following problems for high-reflecting film：(1) complex manufacturing technology；
(2) high transmittance film, high-reflecting film made by, its work optical band bandwidth are low；(3) Coating Materials resource scarcity, the cost of raw material are high.
High transmittance film, high-reflecting film have huge application prospect in Application Optics field, but above mentioned problem limits its application, therefore in the industry
The urgently renewal and revolution of new technology.
The content of the invention
It is an object of the invention to provide a kind of dielectric nano brick array structure and its as high-reflecting film and high transmittance film should
With.
A kind of dielectric nano brick array structure provided by the invention, including the dielectric nano brick battle array on substrate and substrate
Row；The dielectric nano brick array is made up of dielectric nano brick periodic arrangement, wherein, in dielectric nano brick array
Horizontal spacing and longitudinal pitch are equal；The dielectric nano brick is four-prism shape, and its bottom surface is square, and its length, width and height
It is sub-wavelength dimensions.The horizontal spacing refers to the spacing of adjacent dielectric nano brick in dielectric nano brick row, the longitudinal direction
Spacing refers to the spacing of adjacent dielectric nano brick in dielectric nano brick row.
Further, the substrate is silicon dioxide substrates.
Further, the dielectric nano brick is silicon nano brick.
Dielectric nano brick array structure provided by the invention is used as the application of high-reflecting film, is characterized in, above-mentioned electricity is situated between
Matter nano brick array structure is used as high-reflecting film, and optimizes the structural parameters of the dielectric nano brick array structure so that work
Under wavelength s ripples and Mie resonance can be produced during p ripple incidences；
The structural parameters include the length of dielectric nano brick, and the cycle of dielectric nano brick array, institute
State distance of the cycle for the central shaft of horizontal and vertical upper adjacent dielectric nano brick in dielectric nano brick array；
Linearly polarized wave of the s ripples by the electric field that the incident light of polarization state decomposes perpendicular to the high-reflecting film plane of incidence；
The p ripples are by the electric field level that the incident light of polarization state decomposes in the linearly polarized wave of the high-reflecting film plane of incidence.
The structural parameters of the optimization dielectric nano brick array structure, it is specially：
Using Electromagnetic Simulation method, optimize the structural parameters of single dielectric nanometer block assembly under operation wavelength, after optimization
Structural parameters produce Mie resonance when s ripples and p ripple incidences；The dielectric nanometer block assembly include substrate and
Single dielectric nano brick on substrate, wherein, the length of side of substrate upper and lower surface is the cycle；
By the single dielectric nanometer block assembly close-packed arrays after optimization, that is, obtain dielectric nano brick array structure.
Dielectric nano brick array structure provided by the invention is used as the application of high transmittance film, is characterized in, above-mentioned electricity is situated between
Matter nano brick array structure is used as high transmittance film, and optimizes the structural parameters of the dielectric nano brick array structure so that mixing
Refractive index ns of the equivalent refractive index n of layer between mixed layer surrounding medium0With refractive index of substrate nGBetween；
The structural parameters include the length of dielectric nano brick, and the cycle of dielectric nano brick array, institute
State distance of the cycle for the central shaft of horizontal and vertical upper adjacent dielectric nano brick in dielectric nano brick array；
The mixed layer refers to the mixed layer that dielectric nanometer brick layer is regarded as to dielectric nano brick and air.
Preferably, the equivalent refractive index of mixed layer is reflected between the refractive index and substrate of mixed layer surrounding medium
While between rate, also meet that position difference is π caused by adjacent two beams electromagnetic wave incident light, andSo it can reach complete
It is anti-reflection.
Further, the structural parameters of the optimization dielectric nano brick array structure, it is specially：
Using Electromagnetic Simulation method, optimize the structural parameters of single dielectric nanometer block assembly under operation wavelength, after optimization
Structural parameters to cause the equivalent refractive index n of mixed layer between the refractive index n of mixed layer surrounding medium0With refractive index of substrate nG
Between；The dielectric nanometer block assembly includes the single dielectric nano brick on substrate and substrate, wherein, substrate upper and lower surface
The length of side be the cycle；
By the single dielectric nanometer block assembly close-packed arrays after optimization, that is, obtain dielectric nano brick array structure.
The invention provides a kind of dielectric nano brick array structure, and high-reflecting film and high transmittance film are used as, and it is existing
The high-reflecting film of optically transparent medium film type compared with high transmittance film, height of the present invention based on dielectric nano brick array structure is anti-
Film and high transmittance film have the following advantages that：
(1) high-reflecting film and high transmittance film designed by are respectively provided with higher operating efficiency in whole communication band；
(2) high-reflecting film designed by has good angular bandwidth：S ripples can be in any direction within 15 degree of deflection
On remain above more than 90% reflection efficiency；P ripples can remain above 90% on any direction within 35 degree of deflection
Reflection efficiency above；
(3) high transmittance film designed by is not limited by raw material refractive index, and design method is flexible；
(4) dielectric nano brick array structure can continue to use standard photolithography process processing, and technique is simply ripe；
(5) there is super-micro size structure, can be widely used for integreted phontonics field.
Brief description of the drawings
Fig. 1 is the specific schematic diagram of dielectric nanometer block assembly in embodiment；
Fig. 2 is the three dimensional structure diagram of dielectric nano brick array structure in part in embodiment；
Fig. 3 is the reflectivity and transmitance distribution map of the high-reflecting film designed by embodiment；
Fig. 4 be the polarised light of high-reflecting film along the x-axis direction designed by embodiment in different directions angle incidence when reflectivity
Distribution map；
Fig. 5 be high-reflecting film designed by embodiment along the y-axis direction polarised light in different directions angle incidence when reflectivity point
Butut；
Fig. 6 is the transmissivity and distribution graph of reflectivity of the high transmittance film designed by embodiment.
In figure, 1- dielectric nano brick arrays；2- substrates.
Embodiment
In order to illustrate the embodiments of the present invention more clearly and/or technical scheme of the prior art, accompanying drawing will be compareed below
Illustrate the embodiment of the present invention.It should be evident that drawings in the following description are only embodiments of the invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing, and obtain other embodiments.
See the dielectric nano brick array structure shown in Fig. 1~2, including two layers, sequentially consist of dielectric nanometer
Brick array 1 and substrate 2, wherein, dielectric nano brick array 1 is made up of dielectric nano brick periodic arrangement, dielectric nanometer
Brick is as broad as long four-prism shape, and its length, width and height is sub-wavelength dimensions.The structure of single dielectric nanometer block assembly
See Fig. 1.In the present embodiment, dielectric nano brick is silicon nano brick, and substrate 2 is silicon dioxide substrates.
The dielectric nano brick array structure can use the conventional photoetching process in this area to make, and one kind is provided below
Specific preparation technology, including step：
(1) thin dielectric film is plated on substrate 2；
(2) coating photoresist on thin dielectric film；
(3) electron-beam direct writing or photo-etching machine exposal photoresist are used；
(4) developed, etching successively, i.e., obtain dielectric nano brick array 1 on the substrate 2.
The dielectric nano brick array structure can be used as high transmittance film and high-reflecting film, by the dielectric nano brick array structure
As high transmittance film and during high-reflecting film, the mechanism of action and structural parameters differ.During as high transmittance film, mode of operation is projection
Formula；During as high-reflecting film, mode of operation is reflective.
For ease of understanding, it will illustrate that the dielectric nano brick array structure is used as high-reflecting film and high transmittance film respectively below
Operation principle.
First, high-reflecting film
In optical field, low-loss insulating particles can produce strong electric field scattering and magnetic field scattering, i.e., Mie is humorous
Shake (Michaelis magnetic resonance).Its electric field resonant, the Resonance scattering of insulating particles are depended on different from the Resonance scattering of metallic
Determined simultaneously by its size and structural parameters.The Mie resonance in magnetic field can enable dielectric produce the optical scattering of orientation.
The incident light of random polarization state is decomposed into an electric field to put down perpendicular to the linearly polarized wave s of the plane of incidence and an electric field
Row is in the linearly polarized wave p of the plane of incidence.Based on magnetic resonance phenomenon, the structural parameters of dielectric nano brick array 1 are rationally designed, make s
Ripple and p ripples can produce Mie resonance, then incident light will be made largely to be reflected, so as to play increasing minus effect.Here, it is described
Structural parameters include the size of dielectric nano brick and the cycle of dielectric nano brick array.The electricity that structural parameters rationally design
Medium nano brick array structure, during as high-reflecting film, under normal incidence, the reflectivity of s ripples and p ripples has in whole communication band
There is higher operating efficiency.In addition, also there is good angular bandwidth：S ripples can be in any direction within 15 degree of deflection
On remain above more than 90% reflection efficiency；P ripples can remain above 90% on any direction within 35 degree of deflection
Reflection efficiency above.
2nd, high transmittance film
Based on equivalent refraction rate theory, dielectric nano brick array 1 can regard the mixed layer of dielectric nano brick and air as,
Regard the mixed layer as a kind of EFFECTIVE MEDIUM, the equivalent refractive index n of the EFFECTIVE MEDIUM depends on dielectric nano brick array structure
Structural parameters.When electromagnetic wave normal incidence to EFFECTIVE MEDIUM, the reflection and transmission of multi-beam will be produced, and interference be present.By
In interference, adjacent two beams electromagnetic wave will cause position to differ δ：
In formula (1)：
θ represents the incidence angle of electromagnetic wave；
H represents the thickness of EFFECTIVE MEDIUM；
λ represents the incident wavelength of electromagnetic wave.
According to equivalent refraction rate theory, the reflectivity ρ that can draw EFFECTIVE MEDIUM is：
In formula (2)：
nGRepresent refractive index of substrate；
n0Surrounding medium refractive index is represented, the surrounding medium refers to Jie around dielectric nano brick array structure of the present invention
Matter, can be vacuum or air.
Understood based on formula (2), when the equivalent refractive index n of mixed layer is between surrounding medium refractive index n0With refractive index of substrate nG
Between, then mixing can reach the effect of anti-reflection, and work as δ=π, andWhen, it can reach complete anti-reflection effect.
By formula (2) can backwards calculation EFFECTIVE MEDIUM equivalent refractive index n, based on equivalent refractive index theory analysis understand, only
The equivalent refractive index n to be mixed is between surrounding medium refractive index n0Rate n is penetrated with substrateGBetween, then the reflectivity ρ of EFFECTIVE MEDIUM will
Less than the reflectivity of substrate, mix plays the role of anti-reflection to incident electromagnetic wave, so as to reach the effect of high transmittance film.By excellent
Change the structural parameters of dielectric nano brick array, its equivalent refractive index n can be changed as needed, so as to reach the effect of high transmittance film
Fruit.The dielectric nano brick array structure that structural parameters rationally design, during as high transmittance film, the transmitance of electromagnetic wave exists during work
Whole infrared band, and transmitance remains above more than 98%, reflectivity very little.
Specific implementation of the dielectric nano brick array structure as high-reflecting film and high transmittance film will be provided respectively below
Journey.
In the present embodiment, dielectric nano brick is silicon nano brick, and substrate is silicon dioxide substrates.Selection operation wavelength λ=
1547.5nm, and coordinate system is built, in the coordinate system, using dielectric nano brick length and wide direction as X-axis and Y direction,
Using the high direction of nano brick as Z-direction, using any summit of dielectric nano brick as origin, Fig. 1 is seen.
(1) the dielectric nano brick array structure is used as the specific implementation process of high-reflecting film
The first step, using existing Comsol Electromagnetic Simulations instrument, optimize dielectric nanometer block assembly under operation wavelength
Structural parameters so that can produce Mie magnetic resonances when s ripples and p ripple incidences, could so realize reflection enhancement.The present embodiment
In, the structural parameters of the dielectric nanometer block assembly after optimization are：The bottom surface length of side L=410nm of dielectric nano brick, high H=
490nm, cycle C=720nm.
Second step, by the first step, you can determine the structure of single dielectric nanometer block assembly, received according to single dielectric
Rice block assembly determines dielectric nano brick array structure.Fig. 2 is the partial schematic diagram of dielectric nano brick array structure.
Pair determine dielectric nano brick array structure, it is emulated in infrared band using Comsol Electromagnetic Simulation instruments
1460nm~1600nm reflectivity, transmissivity and angular bandwidth, is shown in Fig. 3, RsAnd TsReflectivity and the transmission of s ripples are represented respectively
Rate, Rp、TpThe reflectivity and transmissivity of p ripples is represented respectively.From figure 3, it can be seen that the high-reflecting film have higher reflectivity and compared with
Low transmissivity.
See Fig. 4~5, θxAnd θyAngle of the deflection of incident light with the angle in xoz faces and with yoz faces, Fig. 4 are represented respectively
Show the high-reflecting film in the communications at the long 1547.5nm of cardiac wave, p ripples with distribution graph of reflectivity during different angle incidence, from this
Figure is as can be seen that any direction p ripples within 15 degree of deflection remain above more than 95% reflection efficiency；In deflection
Any direction p ripples within 35 degree remain above more than 90% reflection efficiency.Fig. 5 show the high-reflecting film heart in the communications
At wavelength 1547.5nm, s ripples with distribution graph of reflectivity during different angle incidence, from this figure, it can be seen that in 10 degree of deflection
Within any direction s ripples remain above more than 95% reflection efficiency, any direction s ripples within 15 degree of deflection are equal
Remain above more than 90% reflection efficiency.Complex chart 4~5 understands that the high-reflecting film has preferably angular bandwidth, and to p ripples
Reflecting effect be better than s ripples.
3rd step, the dielectric nano brick array structure determined according to second step, high-reflecting film is prepared using photoetching process.
4th step, using wavelength X=1547.5nm collimation laser light source, coordinate power meter, height prepared by experimental verification
The increasing counter-function of anti-film, specific practice are：Collimation laser light source sends beam of laser irradiation high-reflecting film, is measured using power meter anti-
Penetrate the light energy of direction and transmission direction.Empirical tests, the high-reflecting film have the function of enhancing reflection.
(2) the dielectric nano brick array structure is used as the specific implementation process of high transmittance film
The first step, using existing Comsol Electromagnetic Simulations instrument, optimize dielectric nanometer block assembly under operation wavelength
Structure so that the refractive index of the mixing of dielectric nano brick and air meets anti-reflection condition with thickness, could so realize and subtract
It is anti-anti-reflection.The anti-reflection condition is：The equivalent refractive index n of mixing is between surrounding medium refractive index n0Rate n is penetrated with substrateGBetween.This
In embodiment, the silicon nano brick length and width after optimization is L=180nm, thick H=330nm, cycle C=720nm.
Second step, by the first step, you can determine the structure of single dielectric nanometer block assembly, received according to single dielectric
Rice block assembly determines dielectric nano brick array structure.
Pair determine dielectric nano brick array structure, it is emulated in infrared band using Comsol Electromagnetic Simulation instruments
1460nm~1600nm transmissivity, see Fig. 6, RsAnd TsThe reflectivity and transmissivity of s ripples, R are represented respectivelyp、TpP is represented respectively
The reflectivity and transmissivity of ripple.From fig. 6, it can be seen that the high transmittance film has a higher transmitance, s ripples and p ripples on whole wave band
Transmissivity all stable be held in more than 95%.
3rd step, the dielectric nano brick array structure determined according to second step, high transmittance film is prepared using photoetching process.
4th step, using wavelength X=1547.5nm collimation laser light source, coordinate power meter, height prepared by experimental verification
The anti-reflection function of permeable membrane, specific practice are：Collimation laser light source sends beam of laser irradiation high transmittance film, is measured using power meter anti-
Penetrate the light energy of direction and transmission direction.Empirical tests, the high transmittance film have the function of enhancing transmission.
Above-described embodiment is used for illustrating the present invention, rather than limits the invention, the present invention spirit and
In scope of the claims, any modifications and changes are made to the present invention, both fall within protection scope of the present invention.
Claims (8)
1. a kind of dielectric nano brick array structure, it is characterized in that：
Including the dielectric nano brick array on substrate and substrate；
The dielectric nano brick array is made up of dielectric nano brick periodic arrangement, wherein, in dielectric nano brick array
Horizontal spacing and longitudinal pitch it is equal；
The dielectric nano brick is four-prism shape, and its bottom surface is square, and its length, width and height is sub-wavelength dimensions.
2. a kind of dielectric nano brick array structure as claimed in claim 1, it is characterized in that：
The substrate is silicon dioxide substrates.
3. a kind of dielectric nano brick array structure as claimed in claim 1, it is characterized in that：
The dielectric nano brick is silicon nano brick.
4. dielectric nano brick array structure described in claim 1 is used as the application of high-reflecting film, it is characterized in that：
Dielectric nano brick array structure described in claim 1 is used as high-reflecting film, and optimizes the dielectric nano brick array
The structural parameters of structure so that s ripples and can produce Mie resonance during p ripple incidences under operation wavelength；
The structural parameters include the length of dielectric nano brick, and the cycle of dielectric nano brick array, the week
Phase is the distance of the central shaft of horizontal and vertical upper adjacent dielectric nano brick in dielectric nano brick array；
Linearly polarized wave of the s ripples by the electric field that the incident light of polarization state decomposes perpendicular to the high-reflecting film plane of incidence；
The p ripples are by the electric field level that the incident light of polarization state decomposes in the linearly polarized wave of the high-reflecting film plane of incidence.
5. application as claimed in claim 4, it is characterized in that：
The structural parameters of the optimization dielectric nano brick array structure, it is specially：
Using Electromagnetic Simulation method, optimize the structural parameters of single dielectric nanometer block assembly, the knot after optimization under operation wavelength
Structure parameter will produce Mie resonance when s ripples and p ripple incidences；The dielectric nanometer block assembly includes substrate and substrate
On single dielectric nano brick, wherein, the length of side of substrate upper and lower surface is the cycle；
By the single dielectric nanometer block assembly close-packed arrays after optimization, that is, obtain dielectric nano brick array structure.
6. dielectric nano brick array structure described in claim 1 is used as the application of high transmittance film, it is characterized in that：
Dielectric nano brick array structure described in claim 1 is used as high transmittance film, and optimizes the dielectric nano brick array
The structural parameters of structure so that refractive index ns of the equivalent refractive index n of mixed layer between mixed layer surrounding medium0Reflected with substrate
Rate nGBetween；
The structural parameters include the length of dielectric nano brick, and the cycle of dielectric nano brick array, the week
Phase is the distance of the central shaft of horizontal and vertical upper adjacent dielectric nano brick in dielectric nano brick array；
The mixed layer refers to the mixed layer that dielectric nanometer brick layer is regarded as to dielectric nano brick and air.
7. application as claimed in claim 6, it is characterized in that：
While causing between refractive index and refractive index of substrate of the equivalent refractive index of mixed layer between mixed layer surrounding medium,
Also meet that position difference is π caused by adjacent two beams electromagnetic wave incident light, and
8. application as claimed in claim 6, it is characterized in that：
The structural parameters of the optimization dielectric nano brick array structure, it is specially：
Using Electromagnetic Simulation method, optimize the structural parameters of single dielectric nanometer block assembly, the knot after optimization under operation wavelength
Structure parameter will cause the equivalent refractive index n of mixed layer between the refractive index n of mixed layer surrounding medium0With refractive index of substrate nGBetween；
The dielectric nanometer block assembly includes the single dielectric nano brick on substrate and substrate, wherein, the side of substrate upper and lower surface
Length is the cycle；
By the single dielectric nanometer block assembly close-packed arrays after optimization, that is, obtain dielectric nano brick array structure.
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| CN113758565A (en) * | 2020-06-03 | 2021-12-07 | 中国工程物理研究院激光聚变研究中心 | Connecting component for spectrum sensing system and spectrometer |
| CN113758565B (en) * | 2020-06-03 | 2023-07-25 | 中国工程物理研究院激光聚变研究中心 | Connecting component used in spectrum sensing system and spectrometer |
| CN113126185A (en) * | 2021-04-22 | 2021-07-16 | 东南大学 | Optical thin film structure for realizing asymmetric transmission |
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| CN114280770B (en) * | 2021-11-29 | 2023-08-11 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Terahertz full-silicon off-axis super lens and design method thereof |
| CN114420224A (en) * | 2021-12-21 | 2022-04-29 | 江苏集萃先进高分子材料研究所有限公司 | Prediction method applied to wave transmission performance of 5G communication foam antenna housing |
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