CN107663028A - A kind of preparation method and glass plate of the coated glass pane of the grain pattern containing etching - Google Patents
A kind of preparation method and glass plate of the coated glass pane of the grain pattern containing etching Download PDFInfo
- Publication number
- CN107663028A CN107663028A CN201610621637.1A CN201610621637A CN107663028A CN 107663028 A CN107663028 A CN 107663028A CN 201610621637 A CN201610621637 A CN 201610621637A CN 107663028 A CN107663028 A CN 107663028A
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- China
- Prior art keywords
- etching
- glass
- grain pattern
- lines
- photoresistance
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- 239000011521 glass Substances 0.000 title claims abstract description 103
- 238000005530 etching Methods 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000007747 plating Methods 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 27
- 230000003628 erosive effect Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000001458 anti-acid effect Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000005357 flat glass Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000006058 strengthened glass Substances 0.000 claims description 2
- 235000013339 cereals Nutrition 0.000 description 34
- 229960002050 hydrofluoric acid Drugs 0.000 description 32
- 239000000463 material Substances 0.000 description 9
- 238000007639 printing Methods 0.000 description 5
- 210000003462 vein Anatomy 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
Abstract
The present invention provides a kind of preparation method of the coated glass pane of the grain pattern containing etching, it is included on the glass substrate cleaned up and first plates silicon oxide film, coating thickness is 3 10 μm of hydrofluoric acid resistant photoresistance and pre-baked on film plating layer again, then is exposed, developed by light shield, etching and whole face is peeled off and removes photoresistance film and obtain the glass plate in photoresistance stripper solution in hydrofluoric acid etch liquid.The present invention uses certain thickness hydrofluoric acid resistant photoresistance, can be accurately controlled the size and precision of lines after photoresistance exposure and development, and by controlling the depth of hydrofluoric acid etch glass so that the glass product lines of processing can be controlled accurately.It is included in set to plate before photoresist layer in the present invention and sets membranous layer of silicon oxide, the precision of etching lines and the degree of accuracy is higher in the glass product so obtained, obtain the glass plate of deeper etched pattern.
Description
Technical field
The present invention relates to glass for electronic product plate field, and in particular to a kind of coated glass pane of grain pattern containing etching ink
Preparation method and the glass plate that is accordingly prepared.
Background technology
The etching lines of glass surface mainly has two major classes in the market：When formed with mould high temperature hot pressing, although this
Method can form pattern on glass, but gained pattern dimension tolerance is larger, it is difficult to the uniformity of management and control figure and pattern it is saturating
Lightness, thus products obtained therefrom is of low grade and effect is poor.Another kind is that the method for being strengthened acid etching using printing acid-proof ink is made
Pattern, the ink of this method printing is thick, and resolution ratio is poor, can not produce finer, finer and smoother texture pattern and come.Such as
A kind of production method of glass surface 3D decorative patterns, comprises the following steps disclosed in patent application CN201410394473.4：a、
First the surface of plate glass before and after tempering is cleaned up, passes through silk by designing the silk screen of good pattern in advance with corrosion-resistant ink
The method of print prints pattern in the glass front of 3D decorative patterns to be made, and silk-screen requires that ink thickness is 0.02-0.05mm,
Glass back need not make the face of decorative pattern all using corrosion-resistant ink silk screen printing, then dry front and back；B, will
The good glass of silk-screen is put into etching solution, and the composition and proportioning of the etching solution are prepared by weight percentage, water 70-75 parts,
Catalyst 15-5 parts, hydrofluoric acid 15-20 parts, the time of etching count according to pattern depth according to the speed 0.01mm/55-65 seconds
Calculate, the temperature of etching solution is Celsius using constant temperature 23-27；C, glass taking-up will be processed, is put into the erosion cleaned in water on glass
Carve liquid；D, glass after processing is carried out taking off plating cleaning, drying as finished product.The acidproof protection ink of printing is used in the invention
With HF etching pattern-making lines method, this method cause pattern profile tolerance control in ± 0.05mm, (i.e. 50 is micro-
Rice) within, but this method can not obtain more fine and smooth accurately lines, namely to the finer etched pattern of linewidth requirements then
This method can not be used.In addition, when the glass plate is nonplanar 3D plates, if directly printing ink on 3D plates,
Then printing effect is excessively poor at curved surface.
Patent application CN201510128386 provides a kind of nano-pattern stamp mask version and preparation method thereof, and it is glass material
Matter, its surface have the setting pattern being made up of groove, and it is made of to utilize a base material；The base material has：One matrix, its
For glass material；A film plating layer of the matrix surface is covered in, it is metal or metal oxide material, specially iron+iron
Oxide or chromium+chromium oxide；And it is covered in the photoresist layer on the film plating layer；Wherein, the thickness of the film plating layer
Degree scope is 50-1000nm；The photoresist layer thickness range is 500-15000nm.It is specifically first to be carved using metal in this method
Erosion liquid is etched to the film plating layer on base material, and the film plating layer is removed with local；Then using hydrofluoric acid containing and the glass of ammonium
Glass etching liquid is etched to the matrix on base material.Nano-pattern stamp mask version prepared by this method can expire well
It is enough to the application of nanometer embossing.But the purpose of the program is to prepare nano-pattern stamp mask version, its lighttight metal
Or metal oxide film plating layer is eventually present on mask, thus the program and being not suitable for prepared in the present invention it is transparent
The glass plate of the grain pattern containing etching.In addition, even if removing its metal or metal oxide film plating layer using corresponding etching solution,
The precision and etch depth of the etching grain pattern of gained glass plate also and be unsatisfactory for the present invention requirement.
Therefore, to solve the above problems, working as needs to prepare a kind of etching of line width less than 50 microns, even less than 20 microns
During the glass plate of grain pattern, this area needs to develop a kind of new method for obtaining above-mentioned pattern on a glass.
The content of the invention
It is an object of the invention to provide a kind of lines is finer, contour accuracy can control the glass table within ± 5 μm
The preparation method of the 3D glass plates of the preparation method of facet etch grain pattern, the especially grain pattern containing etching.
Therefore, the present invention provides a kind of preparation method of the coated glass pane of the grain pattern containing etching, comprises the following steps：
Step a, glass substrate is cleaned up；Membranous layer of silicon oxide and clear is set in the whole face plating of the glass substrate surface that cleans up
Wash clean, and the thickness of the membranous layer of silicon oxide is 5~200nm, after cleaning on glass substrate coated surface whole face coating thickness
Hydrofluoric acid resistant photoresistance for 3-10 μm is simultaneously pre-baked, then will finally need to form etching lines by the exposed and developed process of light shield
The photoresistance development of the position of pattern removes, and then toasts the hydrofluoric acid resistant photoresistance；And it is not required to make lines on a glass substrate
The whole face of one side paste antiacid film；
Step b, the glass containing film plating layer and photoresist layer obtained by step a is put into hydrofluoric acid etch liquid and etched, hydrofluoric acid erosion
The concentration for carving HF in liquid is 1-20wt%；Hydrofluoric acid etch liquid etches the membranous layer of silicon oxide and glass, and its final corrosion
The etch depth of glass is 3~20 microns, and the glass etched is taken out and cleaned up in clear water；
Step c, the glass obtained by step b is placed in whole face in photoresistance stripper solution and peels off removal photoresistance film, obtained described containing erosion
Carve the sheet product of grain pattern.
The etch depth of the final etching glass of hydrofluoric acid etch liquid is 3~20 microns in the present invention, preferably 5~15 microns, more excellent
7~10 microns are selected, the glass etching grain pattern that the method for the invention is particularly suitable for use in deeper to hydrofluoric acid etch depth
Make, ensure the etching precision of pattern while etch depth is ensured.
In a kind of embodiment of the present invention, the thickness of the membranous layer of silicon oxide is 10~100nm, for example, 20nm.
Contain the pattern with etching grain pattern identical (or similar) on the light shield used in step a of the present invention exposure process
It is light transmission part to contain the pattern complementary with etching grain pattern on light transmission part, or the light shield.A kind of specific real
To apply in mode, HF concentration is 5~15wt% in step b hydrofluoric acid etch liquid, and the temperature of hydrofluoric acid etch is 20~30 DEG C,
Etching period is according to depending on etch depth；More specifically, HF concentration is 10wt% in hydrofluoric acid etch liquid, and hydrofluoric acid
The temperature of etching is 25 DEG C, etching period 80s.Skilled person will appreciate that, the hydrofluoric acid etch liquid can lose
Membranous layer of silicon oxide, and can etching glass are carved, thus forms etching lines after hydrofluoric acid etch on glass.
In a kind of specific embodiment, the erosion that line width is less than 30 microns is included in the lines of the etching grain pattern
Rag road.
In a kind of specific embodiment, the line that line width is less than 20 microns is included in the lines of the etching grain pattern
Road, comprising line width it is 10~15 microns of lines in the lines of preferably described etching grain pattern.
In a kind of specific embodiment, in the etching grain pattern, line width is shared by less than 30 microns of lines
Real area is more than the 10% of the gross area of the etching grain pattern.
In a kind of specific embodiment, line width is that the real area shared by less than 20 microns of lines is the etching lines
More than the 30% of the gross area of pattern.
In a kind of specific embodiment, the glass substrate is flat glass or 3D bend glasses, and the glass base
Piece is non-strengthened glass substrate.Skilled person will appreciate that, hydrofluoric acid resistant photoresist layer is arranged on substrate surface in the present invention
On, and etch grain pattern and be etched in substrate.
The present invention also provides a kind of coated glass pane for the grain pattern containing etching that above-mentioned side is prepared.
The present invention also provides a kind of coated glass pane of the grain pattern containing etching, and the glass plate includes glass substrate 11, oxidation
Silicon film plating layer 14 and the recessed etching grain pattern 12 of plated film layer surface from glass substrate, the etching grain pattern 12
Comprising the etching lines that line width is less than 30 microns in lines, and the thickness of the silica film plating layer 14 is 5~200nm,
Etch grain pattern 12 from the recessed depth in glass substrate upper surface be 3~20 microns.
Beneficial effect：The present invention uses certain thickness hydrofluoric acid resistant photoresistance, after being accurately controlled photoresistance exposure and development
The size and precision of lines, and by controlling the depth of hydrofluoric acid etch glass so that the glass product lines of processing can essence
Really control.Plating has set the membranous layer of silicon oxide of specific thicknesses in the present invention, and the precision of lines is etched in the glass product so obtained
It is high and fine and smooth, and pattern fidelity is higher, obtains the glass plate of deeper etched pattern.
Brief description of the drawings
Fig. 1 is the glass front structural representation in product preparation process after the completion of certain step in the present invention；
Fig. 2 be in the present invention in product preparation process and products obtained therefrom side structure schematic diagram, wherein Fig. 2-1 is step a
Structural representation after middle completion plated film, wherein Fig. 2-2 are the structural representation after the completion of step a, and Fig. 2-3 is step b
After the completion of structural representation, Fig. 2-4 be step c after the completion of product structure schematic diagram.
In figure, 11, glass substrate, 12, etching grain pattern, 13, hydrofluoric acid resistant photoresist layer, 14, membranous layer of silicon oxide.
Embodiment
It is further rapid to describe embodiment of the invention in detail below by example.
Those skilled in the art know ground, photoresistance, also referred to as photoresist, be one apply it is photosensitive in many industrial process
Material.Such as it is applied in photoetching technique, the coating of a pattern can be engraved in material surface.Photoresistance is divided to two kinds,
Positive photoresistance and negative sense photoresistance.Positive photoresistance is that the part for shining light can be dissolved in photoresistance developer solution, the part without shining light
Photoresistance developer solution will not be dissolved in；That is, photoresistance is insoluble in developer solution in itself, by the local photoresistance of illumination after exposure
Small molecule is dissociated into, forms the structure for being readily soluble in developer solution.Negative sense photoresistance is photoresistance (part for not shining light) in itself
It is soluble in developer solution, and it shines the part of light and will not be dissolved in photoresistance developer solution and (is formed after exposure and be not easily dissolved into developer solution
Chemical constitution).Photoresistance is mainly mixed by resin, emulsion, three kinds of compositions of solvent, photoresistance typically all with light shield and
Corresponding developer solution is used cooperatively, and when needing front to peel off photoresistance, can also be supported the use with photoresistance stripper solution.Namely
Say, in the prior art, the general chemical composition of photoresistance (being specially hydrofluoric acid resistant photoresistance), developer solution and photoresistance stripper solution
And its mutually adapted relation is all content known in those skilled in the art.Photoresistance can be divided into dry film light according to other mode
Resistance and wet film photoresistance, and wherein dry film photoresistance it is conventional be negative sense photoresistance, and wet film photoresistance it is conventional be positive photoresistance, so
More accurate exposure imaging result can be obtained.
The present invention a kind of embodiment in, such as using forward direction wet film photoresistance when, if purpose is in glass substrate
The upper pattern for forming vein lines, then the pierced pattern of light shield is consistent or similar with vein grain pattern, after illumination, hollow out
Partial photoresistance is dissolved in developer solution by the irradiation of light, forms the pattern of hollow out at vein grain pattern on a glass, its
Its large area is still after illumination by photoresistance covering.Hollow part forms etching line through hydrofluoric acid etch on the glass substrate
Road.Reusing photoresistance stripper solution, the whole face from glass plate is peeled off by hydrofluoric acid resistant photoresist layer, then leaves the vein that etching obtains
Grain pattern, the purpose of the present invention is thus reached.
In the present invention by taking vein grain pattern as an example, but skilled person will appreciate that it can be used using the method for the invention
In the etching grain pattern for preparing other any shapes.
In the present invention, when being exposed to photoresistance, 2D cover plates can use in general mercury lamp exposure machine or radium-shine exposure machine,
3D cover plates then need to expose using radium-shine exposure machine.
Pattern in the present invention embodies by the etching depth of the hydrofluoric acid to glass, shows as the grain pattern of slightly glare,
The pattern is without obvious color.In a kind of specific embodiment, the glass substrate is the glass substrate do not strengthened.
Hydrofluoric acid resistant photoresistance used belongs to ripe commodity in the present invention, the EPG580 produced such as TaiWan, China photoproduction forever or Japan
The N-100 of POK companies production.Heretofore described developer solution is, for example, TMAH (tetramethylphosphonihydroxide hydroxide base amine), its concentration
For 2~4wt%.The antiacid film used in the present invention is similarly a kind of convenience goods.In the present invention, for etching glass and oxygen
The hydrofluoric acid etch liquid of SiClx film layer equally can be by commercially available acquisition, wherein containing HF and other compositions.
Include monoethanolamine and butyl carbitol in photoresistance stripper solution in the present invention, or the photoresistance stripper solution be sodium hydroxide or
Potassium hydroxide solution；No matter which kind of photoresistance stripper solution can pass through commercially available acquisition.Plating sets one first on glass in the present invention
Layer membranous layer of silicon oxide, the thickness of the membranous layer of silicon oxide are generally 5~200nm, and the oxygen is set for example with Vacuum Coating method plating
SiClx film.
In the present invention, the photoresistance pattern and the final etched pattern that are removed after development are consistent.In the present invention, the resistant to hydrogen
The acid resistance requirement of fluoric acid photoresistance is that photoresistance soaks 5min in hydrofluoric acid etch liquid, and photoresistance is without coming off.
In a kind of specific embodiment, in step a, pre-baked temperature is 100-140 DEG C, time 120-500s, is exposed
Light energy is 100-300mJ/cm2, developer solution TMAH, concentration 3-4%, or developer solution is that concentration is 0.01~2% (its
Remaining component is the additive such as moisture content and interfacial agent) KOH, its corresponding other photoresistance.Development temperature is 21~25 DEG C,
Time is 80-200s.Hard baking temperature is 110-150 DEG C, time 2-30min.
Embodiment 1
The purpose of the present embodiment is to prepare a kind of glass plate of the grain pattern containing etching, is comprised the following steps：
Step a, glass substrate is cleaned up；Membranous layer of silicon oxide and clear is set in the whole face plating of the glass substrate surface that cleans up
Wash clean, and the thickness of the membranous layer of silicon oxide is 5~200nm, resulting structures are as shown in Fig. 2-1.In glass base after cleaning
Whole face coating thickness is 3-10 μm of hydrofluoric acid resistant photoresistance and pre-baked on piece coated surface, then passes through the exposed and developed process of light shield
Need the photoresistance development for forming the position of etching grain pattern to remove by final, then toast the hydrofluoric acid resistant photoresistance；And
The whole face of one side for being not required to make lines on glass substrate pastes antiacid film；Resulting structures are as shown in Fig. 2-2.
Step b, the glass containing film plating layer and photoresist layer obtained by step a is put into hydrofluoric acid etch liquid and etched, hydrofluoric acid erosion
The concentration for carving HF in liquid is 1-20wt%；Hydrofluoric acid etch liquid etches the membranous layer of silicon oxide and glass, and its final corrosion
The etch depth of glass is 3~20 microns, and the glass etched is taken out and cleaned up in clear water；Resulting structures such as Fig. 2-3
It is shown.
Step c, the glass obtained by step b is placed in whole face in photoresistance stripper solution and peels off removal photoresistance film, obtained described containing erosion
Carve the sheet product of grain pattern.Resulting structures are as in Figure 2-4.
It is very fine that a kind of lines can be obtained using the method for the invention, and line width is less than 50 microns, to be even less than 20 micro-
The glass plate of the etching grain pattern of rice, the depth of the etching lines on gained glass plate is up to 7~20 microns, the wheel of pattern
Wide precision is can be controlled within ± 5 μm.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for those skilled in the art
For member, the present invention can have various modifications and variations.Any modification within the spirit and principles of the invention, being made,
Equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (10)
1. a kind of preparation method of the coated glass pane of the grain pattern containing etching, comprises the following steps：
Step a, glass substrate is cleaned up；Membranous layer of silicon oxide and clear is set in the whole face plating of the glass substrate surface that cleans up
Wash clean, and the thickness of the membranous layer of silicon oxide is 5~200nm, after cleaning on glass substrate coated surface whole face coating thickness
Hydrofluoric acid resistant photoresistance for 3-10 μm is simultaneously pre-baked, then will finally need to form etching lines by the exposed and developed process of light shield
The photoresistance development of the position of pattern removes, and then toasts the hydrofluoric acid resistant photoresistance；And it is not required to make lines on a glass substrate
The whole face of one side paste antiacid film；
Step b, the glass containing film plating layer and photoresist layer obtained by step a is put into hydrofluoric acid etch liquid and etched, hydrofluoric acid erosion
The concentration for carving HF in liquid is 1-20wt%；Hydrofluoric acid etch liquid etches the membranous layer of silicon oxide and glass, and its final corrosion
The etch depth of glass is 3~20 microns, and the glass etched is taken out and cleaned up in clear water；
Step c, the glass obtained by step b is placed in whole face in photoresistance stripper solution and peels off removal photoresistance film, obtained described containing erosion
Carve the sheet product of grain pattern.
2. method according to claim 1, it is characterised in that the thickness of the membranous layer of silicon oxide is 10~100nm.
3. method according to claim 1, it is characterised in that the glass substrate is non-strengthened glass substrate.
4. according to any one methods described in claims 1 to 3, it is characterised in that the lines of the etching grain pattern
In comprising line width be less than 30 microns of etching lines.
5. method according to claim 4, it is characterised in that be comprising line width in the lines of the etching grain pattern
Less than 20 microns of lines, comprising line width it is 10~15 microns of lines in the lines of preferably described etching grain pattern.
6. according to any one methods described in claims 1 to 3, it is characterised in that in the etching grain pattern, line
Real area shared by a width of less than 30 microns of lines is more than the 10% of the gross area of the etching grain pattern.
7. method according to claim 6, it is characterised in that it is described etching grain pattern in, line width be 20 microns with
Under lines shared by real area for the etching grain pattern the gross area more than 30%.
8. according to any one methods described in claims 1 to 3, it is characterised in that the glass substrate is flat glass
Or 3D bend glasses.
9. the coated glass pane for the grain pattern containing etching being just prepared according to any one in claim 1~8.
10. a kind of coated glass pane of the grain pattern containing etching, the glass plate includes glass substrate (11), silica plates
Film layer (14) and the recessed etching grain pattern (12) of plated film layer surface from glass substrate, the etching grain pattern (12)
Lines in comprising line width be less than 30 microns of etching lines, and the thickness of the silica film plating layer (14) is
5~200nm, etching grain pattern (12) from the recessed depth in glass substrate upper surface be 3~20 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN107459266A (en) * | 2017-08-09 | 2017-12-12 | 维达力实业(深圳)有限公司 | Cover-plate glass and preparation method thereof |
| CN110040972A (en) * | 2019-04-17 | 2019-07-23 | 江西沃格光电股份有限公司 | Glass and preparation method thereof and its application is thinned |
| CN110194596A (en) * | 2019-06-12 | 2019-09-03 | 成都西偌帕斯光电科技有限责任公司 | A kind of processing method of laser cutting etching glass mobile phone camera screening glass |
| CN110473823A (en) * | 2019-06-28 | 2019-11-19 | 福建华佳彩有限公司 | A kind of preparation method of frit glue pattern |
| CN113630992A (en) * | 2020-05-06 | 2021-11-09 | Oppo广东移动通信有限公司 | Preparation method of film-coated part, shell and electronic equipment |
| CN113772956A (en) * | 2021-09-28 | 2021-12-10 | 蓝思科技(东莞)有限公司 | Anti-glare glass and preparation method thereof |
| CN113955946A (en) * | 2021-10-20 | 2022-01-21 | 滁州明永光电科技有限公司 | Novel texture effect manufacturing method |
| CN115064075A (en) * | 2022-06-30 | 2022-09-16 | 芜湖长信科技股份有限公司 | Flexible glass with continuously-changed regional thickness and preparation method and application thereof |
| CN115466058A (en) * | 2022-08-15 | 2022-12-13 | 伯恩高新科技（惠州）有限公司 | Preparation method of glass with texture on surface |
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| CN107459266A (en) * | 2017-08-09 | 2017-12-12 | 维达力实业(深圳)有限公司 | Cover-plate glass and preparation method thereof |
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| CN113772956A (en) * | 2021-09-28 | 2021-12-10 | 蓝思科技(东莞)有限公司 | Anti-glare glass and preparation method thereof |
| CN113955946A (en) * | 2021-10-20 | 2022-01-21 | 滁州明永光电科技有限公司 | Novel texture effect manufacturing method |
| CN115064075A (en) * | 2022-06-30 | 2022-09-16 | 芜湖长信科技股份有限公司 | Flexible glass with continuously-changed regional thickness and preparation method and application thereof |
| CN115466058A (en) * | 2022-08-15 | 2022-12-13 | 伯恩高新科技（惠州）有限公司 | Preparation method of glass with texture on surface |
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