CN205893088U - Glass board that contains etching line pattern - Google Patents
Glass board that contains etching line pattern Download PDFInfo
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- CN205893088U CN205893088U CN201620819943.1U CN201620819943U CN205893088U CN 205893088 U CN205893088 U CN 205893088U CN 201620819943 U CN201620819943 U CN 201620819943U CN 205893088 U CN205893088 U CN 205893088U
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- etching
- glass
- grain pattern
- pattern
- microns
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Abstract
The utility model provides a glass board that contains etching line pattern, the glass board includes the glass substrate and follows the etching line pattern of the surperficial concave yield of glass substrate, contain the live width in the line of etching line pattern and be the etching line below 30 microns, just etching line pattern is 3~20 microns from the degree of depth of glass substrate upper surface concave yield. The utility model discloses in establish metal layer and use the etching of metal film etching solution to get rid of supporting role's metal layer with last including plating, the precision and the degree of accuracy of etching line is higher among the glass saving who obtains like this. The utility model discloses in successfully to obtain a line meticulousr, contour accuracy can control the glass board that contains etching line pattern within 5 mu m.
Description
Technical field
This utility model is related to glass for electronic product plate field and in particular to a kind of glass containing etching ink grain pattern
Glass plate.
Background technology
The etching lines of glass surface mainly has two big class in the market: one is formed with mould high temperature hot pressing, though
So this method can form pattern on glass, but gained pattern dimension tolerance larger it is difficult to the concordance of management and control figure and pattern
Transparency, thus products obtained therefrom is of low grade and effect is poor.Another kind is the method strengthening acid etching using printing acid-proof ink
Pattern-making, the ink of this method printing is thick, and resolution difference is come it is impossible to produce finer, finer and smoother texture pattern.As
Disclosed in patent application cn201410394473.4, a kind of production method of glass surface 3d decorative pattern, comprises the steps: a, elder generation
Surface of plate glass before and after tempering is cleaned up, passes through silk-screen with the silk screen that corrosion-resistant ink passes through prior design good pattern
Method pattern printed on the glass front that will make 3d decorative pattern, it is 0.02-0.05mm that silk-screen requires ink thickness, glass
The back side does not need the face making decorative pattern all using corrosion-resistant ink silk screen printing, then dries front and back；B, silk-screen is good
Glass put in etching solution, the composition of described etching solution and proportioning are prepared by weight percentage, water 70-75 part, catalyst 15-
5 parts, Fluohydric acid. 15-20 part, the time of etching calculates according to the speed 0.01mm/55-65 second according to pattern depth, the temperature of etching solution
Degree is Celsius using constant temperature 23-27；C, will process glass take out, put in water clean glass on etching solution；D, will process after
Glass carries out taking off plating cleaning, dries as finished product.Pattern-making stricture of vagina is etched using printing acidproof protection ink with hf in this invention
The method on road, the method makes the profile tolerance of pattern control within ± 0.05mm (i.e. 50 microns), but the method cannot obtain
To more exquisiteness accurately lines, namely the etched pattern finer to linewidth requirements then can not use the method.In addition, working as institute
When stating glass plate for nonplanar 3d plate, if directly printing ink on 3d plate, at curved surface, printing effect is excessively poor.
Patent application cn201510128386 provides a kind of nano-pattern stamp mask version and preparation method thereof, and it is glass
Material, its surface has the setting pattern being made up of groove, and it is made of using a base material；This base material has: a matrix, and it is
Glass material；Cover the film plating layer in this matrix surface, it is metal or metal-oxide material, the specially oxygen of ferrum+ferrum
Compound or the oxide of chromium+chromium；And cover the photoresist layer on this film plating layer；Wherein, the thickness range of this film plating layer
For 50-1000nm；This photoresist layer thickness range is 500-15000nm.Metal etch liquid is specifically first adopted to base in the method
Film plating layer on material is etched processing, and removes this film plating layer with local；Then adopt the glass etching liquid of hydrofluoric acid containing and ammonium
Matrix on base material is etched process.The nano-pattern stamp mask version of the method preparation can be satisfied with nanometer well
The application of stamping technique.But the purpose of the program is to prepare nano-pattern stamp mask version, its lighttight metal or metal oxygen
Compound film plating layer is eventually present on mask, thus the program being not suitable for prepare in this utility model transparent containing erosion
Carve the glass plate of grain pattern.Even if in addition, removing its metal or metal-oxide film plating layer, gained using corresponding etching solution
The precision of etching grain pattern of glass plate and etch depth also and are unsatisfactory for requirement of the present utility model.
Therefore, for solving the above problems, when needing to prepare a kind of more exquisite glass plate of etched pattern, this area needs
Develop a kind of new method preparing etched pattern on a glass and new product.
Utility model content
The purpose of this utility model is to provide a kind of lines finer, and contour accuracy can control within ± 5 μm
And live width is less than 50 microns, is even less than 20 microns of the glass plate etching grain pattern, especially contain etching grain pattern
3d glass plate.
Therefore, this utility model provides a kind of glass plate containing etching grain pattern first, and described glass plate includes glass
The recessed etching grain pattern 12 of substrate 11 and the surface from glass substrate, comprises line in the lines of described etching grain pattern 12
A width of less than 30 microns of etching lines, and described etching grain pattern 12 from the recessed depth of glass substrate upper surface be 3～
20 microns.
In a kind of specific embodiment, described glass plate also includes and the pattern complementary of etching grain pattern 12
Hydrofluoric acid resistant photoresist layer 13, and the thickness of described hydrofluoric acid resistant photoresist layer 13 is 3～10 microns.
In a kind of specific embodiment, the thickness of described hydrofluoric acid resistant photoresist layer 13 is 3～5 microns.
In a kind of specific embodiment, comprising live width in the lines of described etching grain pattern is less than 20 microns
Lines.
In a kind of specific embodiment, comprising live width in the lines of described etching grain pattern is 10～15 microns
Lines.
In a kind of specific embodiment, in described etching grain pattern, live width is shared by less than 30 microns of lines
Real area be this etching grain pattern the gross area more than 10%.
In a kind of specific embodiment, in described etching grain pattern, live width is shared by less than 20 microns of lines
Real area be this etching grain pattern the gross area more than 30%.
In a kind of specific embodiment, described glass substrate 11 is flat glass or 3d bend glass, and described glass
Glass substrate is non-strengthens glass substrate.
This utility model also provides a kind of preparation method of the glass plate containing etching grain pattern, comprises the steps:
Step a, glass substrate is cleaned up；Set metallic diaphragm in the plating of the glass substrate surface cleaning up whole face simultaneously clear
Wash clean, and the thickness of described metallic diaphragm is 5～200nm, described metallic diaphragm is selected from aluminium film, molybdenum film and copper film, after cleaning
On glass substrate coated surface, whole face coating thickness is 3-10 μm of hydrofluoric acid resistant photoresistance pre-baked, then is exposed by light shield and show
Shadow operation needs the photoresistance development forming the position of etching grain pattern to remove by final, subsequently toasts described hydrofluoric acid resistant light
Resistance；And on a glass substrate be not required to make lines the whole face of one side paste antiacid film；
Step b, the glass that step a gained is contained film plating layer and photoresist layer put into etching, Fluohydric acid. in hydrofluoric acid etch liquid
In etching solution, the concentration of hf is 1-20wt%；Hydrofluoric acid etch liquid corrosion carves described metallic diaphragm and glass, and its final corrosion glass
The etch depth of glass is 3～20 microns, the glass having etched is taken out and cleans up in clear water；
Step c, the whole face in photoresistance stripper solution that is placed in the glass of step b gained are peeled off and are removed photoresistance film；
Step d, glass is placed in etching in metal film etching solution after removing photoresistance film, is fully etched removal metal film
Obtain the described sheet product containing etching grain pattern afterwards.
In this utility model, the etch depth of the final etching glass of hydrofluoric acid etch liquid is 3～20 microns, and preferably 5～15 is micro-
Rice, more preferably 7～10 microns, method described in the utility model is particularly suited for the glass etching deeper to hydrofluoric acid etch depth
The making of grain pattern, ensures the etching precision of pattern while ensureing etch depth.
Contain on light shield used in the exposure process of this utility model step a and etching grain pattern identical (or similar)
Pattern be to be light transmission part containing the pattern complementary with etching grain pattern on light transmission part, or described light shield.In a kind of tool
In the embodiment of body, in step b hydrofluoric acid etch liquid, the concentration of hf is 5～15wt%, and the temperature of hydrofluoric acid etch is 20
～30 DEG C, etching period is according to depending on etch depth；More specifically, in hydrofluoric acid etch liquid, the concentration of hf is 10wt%, and hydrogen
The temperature of fluoric acid etching is 25 DEG C, and etching period is 80s.Skilled person will appreciate that, described hydrofluoric acid etch liquid can
Etching metallic diaphragm, can etch glass again, thus forms etching lines after hydrofluoric acid etch on glass.
Beneficial effect: this utility model adopts certain thickness hydrofluoric acid resistant photoresistance, can be accurately controlled photoresistance exposure
With the size of lines and precision after development, and by controlling the depth of hydrofluoric acid etch glass so that the glass product stricture of vagina of processing
Road can be with precise control.In this utility model, plating has set specific metallic diaphragm and has finally used the etching of metal film etching solution to remove
The metallic diaphragm helping out, etches the high precision of lines in the glass product so obtaining and fine and smooth, and pattern fidelity
Higher.
Brief description
Fig. 1 is the glass front structural representation after the completion of certain step in product preparation process in this utility model；
Fig. 2 is in product preparation process in this utility model and the side structure schematic diagram of products obtained therefrom, and wherein Fig. 2-1 is
The structural representation after plated film is completed, wherein Fig. 2-2 is the structural representation after the completion of step a, Fig. 2-3 is step b in step a
After the completion of structural representation, Fig. 2-4 be step c after the completion of structural representation, Fig. 2-5 be step d after the completion of product knot
Structure schematic diagram.
In figure, 11, glass substrate, 12, etching grain pattern, 13, hydrofluoric acid resistant photoresist layer, 14, metallic diaphragm.
Specific embodiment
Below by example, suddenly describe specific embodiment of the present utility model further in detail.
Those skilled in the art know ground, and photoresistance, also referred to as photoresist, are the light applied in many industrial process
Quick material.For example it applies in photoetching technique, can engrave the coating of a pattern in material surface.Photoresistance divides two kinds,
Positive photoresistance and negative sense photoresistance.Positive photoresistance is that the part shining light can be dissolved in photoresistance developer solution, without shining the part of light
Photoresistance developer solution will not be dissolved in；That is, photoresistance is insoluble in developer solution in itself, it is subject to the photoresistance solution in the place of illumination after exposure
From becoming small molecule, form the structure being readily soluble in developer solution.Negative sense photoresistance is that photoresistance itself (not shining the part of light) is readily soluble
In developer solution, and it shines the part of light and will not be dissolved in photoresistance developer solution and (forms the chemistry being not easily dissolved into developer solution after exposure
Structure).Mainly by resin, photosensitizer, three kinds of compositions of solvent mix photoresistance, photoresistance typically all with light shield and corresponding show
Shadow liquid uses cooperatively, and when needing front to peel off photoresistance, also can support the use with photoresistance stripper solution.That is, existing
In technology, the general chemical composition of photoresistance (specially hydrofluoric acid resistant photoresistance), developer solution and photoresistance stripper solution and its mutual adapted
Relation is all content known in those skilled in the art.Photoresistance can be divided into dry film photoresistance and wet film light according to other mode
Resistance, and wherein dry film photoresistance commonly use be negative sense photoresistance, and wet film photoresistance commonly use be positive photoresistance, so can obtain more smart
True exposure imaging result.
In a kind of specific embodiment of the present utility model, such as when using positive wet film photoresistance, if purpose be
The pattern of vein lines is formed on glass substrate, then the pierced pattern of light shield is consistent with vein grain pattern or similar, through illumination
Afterwards, the photoresistance of openwork part is subject to the irradiation of light to be dissolved in developer solution, forms hollow out at vein grain pattern on a glass
Pattern, other large area are still after illumination and to be covered by photoresistance.Hollow part shape on the glass substrate through hydrofluoric acid etch
Become etching lines.Whole face from glass plate is peeled off by hydrofluoric acid resistant photoresist layer to reuse photoresistance stripper solution, then stay and etch
The vein grain pattern arriving, has thus reached the purpose of this utility model.
In this utility model all, but skilled person will appreciate that use this utility model institute taking vein grain pattern as a example
The method of stating can be used for the etching grain pattern preparing other any shapes.
In this utility model, when being exposed to photoresistance, 2d cover plate can be using general mercury lamp exposure machine or radium-shine
Exposure machine, 3d cover plate then needs to expose using radium-shine exposure machine.
Pattern in this utility model relies on Fluohydric acid. that the etching depth of glass is embodied, and shows as the stricture of vagina of slightly glare
Road pattern, the no obvious color of this pattern.In a kind of specific embodiment, described glass substrate is the glass base do not strengthened
Piece.
Hydrofluoric acid resistant photoresistance used in this utility model belongs to ripe commodity, such as the TaiWan, China epg580 that light produces forever
Or the n-100 of Japanese pok company production.Developer solution described in this utility model is, for example, tmah (tetramethylphosphonihydroxide hydroxide base amine), its
Concentration is 2～4wt%.Used in this utility model, antiacid film is similarly a kind of convenience goods.In this utility model, for losing
The hydrofluoric acid etch liquid of carved glass and metallic diaphragm equally can wherein contain hf and other composition by commercially available acquisition.
Comprise ethanolamine and butyl carbitol in photoresistance stripper solution in this utility model, or described photoresistance stripper solution is hydrogen
Sodium oxide or potassium hydroxide solution；No matter which kind of photoresistance stripper solution can be by commercially available acquisition.Exist first in this utility model
On glass, plating sets layer of metal film layer, and the thickness of described metallic diaphragm is generally 5～200nm, for example with Vacuum Coating method plating
If described metal film.
Because it is light tight to plate the metal film (aluminium film, molybdenum film, copper film) setting in this utility model, so that at last
In step, its whole removing is removed.Different metal films is corresponding to use different metal film etching solutions, and described metal film etching solution is only
Etching removes metal-plated film layer and does not produce any impact to glass substrate.The content of described metal film etching solution is similarly ability
Content knowable to field technique personnel, and it again may be by commercially available acquisition.
In this utility model, the photoresistance pattern removing after development is consistent with final etched pattern.This utility model
In, the acid resistance of described hydrofluoric acid resistant photoresistance requires to be that photoresistance soaks 5min in hydrofluoric acid etch liquid, photoresistance no comes off.
In a kind of specific embodiment, in step a, pre-baked temperature is 100-140 DEG C, and the time is 120-500s, exposes
Light energy is 100-300mj/cm2, developer solution is tmah, and concentration is 3-4%, or developer solution is 0.01～2% (remaining for concentration
Group is divided into the additives such as moisture content and interfacial agent) koh, its other photoresistance of correspondence.Development temperature is 21～25 DEG C, the time
For 80-200s.Hard baking temperature is 110-150 DEG C, and the time is 2-30min.
Embodiment 1
The purpose of the present embodiment is to prepare a kind of glass plate containing etching grain pattern, comprises the steps:
Step a, glass substrate is cleaned up；Set metallic diaphragm in the plating of the glass substrate surface cleaning up whole face simultaneously clear
Wash clean, and the thickness of described metallic diaphragm is 5～200nm, preferably 20～150nm；Described metallic diaphragm is aluminium film, molybdenum film
Or copper film；Resulting structures are as shown in Fig. 2-1.On clean glass substrate, whole face coating thickness is 3-10 μm of hydrofluoric acid resistant light
Resistance is simultaneously pre-baked, then needs the photoresistance development forming the position of etching grain pattern to go by the exposed and developed operation of light shield by final
Remove, subsequently toast described hydrofluoric acid resistant photoresistance；And on a glass substrate be not required to make lines the whole face of one side paste antiacid film；Institute
Obtain structure as shown in Fig. 2-2.
Etching in hydrofluoric acid etch liquid put into by step b, the glass that step a gained is contained photoresist layer, in hydrofluoric acid etch liquid
The concentration of hf is 1-20wt%；The etch depth of Fluohydric acid. etching glass is 3～20 microns, and the glass having etched is taken out clear
Clean up in water；Resulting structures are as Figure 2-3.
Step c, the whole face in photoresistance stripper solution that is placed in the glass of step b gained are peeled off and are removed photoresistance film；Contain described in obtaining
The sheet product of etching grain pattern.Resulting structures are as in Figure 2-4.
Step d, glass is placed in etching in metal film etching solution after removing photoresistance film, after etching removes metal film
To the described sheet product containing etching grain pattern.The structure of gained sheet product is as shown in Figure 2-5.
A kind of lines can be obtained using method described in the utility model very fine, live width be less than 50 microns, even little
In 20 microns etching grain pattern glass plate, on gained glass plate etching lines depth up to 7～20 microns, pattern
Contour accuracy can be controlled in ± 5 μm within.
The foregoing is only preferred embodiment of the present utility model, be not limited to this utility model, for this
For the technical staff in field, this utility model can have various modifications and variations.All of the present utility model spirit and principle
Within, any modification, equivalent substitution and improvement made etc., should be included within protection domain of the present utility model.
Claims (8)
1. a kind of glass plate containing etching grain pattern, described glass plate includes glass substrate (11) and the surface from glass substrate
Recessed etching grain pattern (12), comprises, in the lines of described etching grain pattern (12), the etching that live width is less than 30 microns
Lines, and described etching grain pattern (12) is 3～20 microns from the recessed depth of glass substrate upper surface.
2. glass plate according to claim 1 is it is characterised in that also include on described glass plate and etching grain pattern
(12) the hydrofluoric acid resistant photoresist layer (13) of pattern complementary, and the thickness of described hydrofluoric acid resistant photoresist layer (13) is 3～10 microns.
3. glass plate according to claim 2 is it is characterised in that the thickness of described hydrofluoric acid resistant photoresist layer (13) is 3～5
Micron.
4. the glass plate according to any one in claims 1 to 3 is it is characterised in that the stricture of vagina of described etching grain pattern
The lines that live width is less than 20 microns is comprised in road.
5. glass plate according to claim 4, it is in comprising live width in the lines of described etching grain pattern is 10～15
The lines of micron.
6. the glass plate according to any one in claims 1 to 3 is it is characterised in that in described etching grain pattern, line
Real area shared by a width of less than 30 microns of lines is more than the 10% of the gross area of this etching grain pattern.
7. glass plate according to claim 6 is it is characterised in that in described etching grain pattern, live width be 20 microns with
Under the real area shared by lines be this etching grain pattern the gross area more than 30%.
8. the glass plate according to any one in claims 1 to 3 is it is characterised in that described glass substrate (11) is flat
Surface glass or 3d bend glass, and described glass substrate is non-strengthens glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620819943.1U CN205893088U (en) | 2016-07-29 | 2016-07-29 | Glass board that contains etching line pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620819943.1U CN205893088U (en) | 2016-07-29 | 2016-07-29 | Glass board that contains etching line pattern |
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| Publication Number | Publication Date |
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| CN205893088U true CN205893088U (en) | 2017-01-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107663030A (en) * | 2016-07-29 | 2018-02-06 | 蓝思科技（长沙）有限公司 | A kind of preparation method and glass plate of the glass plate of the grain pattern containing etching |
-
2016
- 2016-07-29 CN CN201620819943.1U patent/CN205893088U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107663030A (en) * | 2016-07-29 | 2018-02-06 | 蓝思科技（长沙）有限公司 | A kind of preparation method and glass plate of the glass plate of the grain pattern containing etching |
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