CN205838841U - A kind of coated glass pane containing etching grain pattern - Google Patents
A kind of coated glass pane containing etching grain pattern Download PDFInfo
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- CN205838841U CN205838841U CN201620819944.6U CN201620819944U CN205838841U CN 205838841 U CN205838841 U CN 205838841U CN 201620819944 U CN201620819944 U CN 201620819944U CN 205838841 U CN205838841 U CN 205838841U
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Abstract
This utility model provides a kind of coated glass pane containing etching grain pattern, described glass plate includes the etching grain pattern that glass substrate, silicon oxide film plating layer and the film plating layer surface from glass substrate are recessed, the lines of described etching grain pattern comprises the etching lines that live width is less than 30 microns, and the thickness of described silicon oxide film plating layer is 5～200nm, etching grain pattern is 3～20 microns from the degree of depth that glass substrate upper surface is recessed.Being included in plating before arranging photoresist layer in this utility model and set membranous layer of silicon oxide, the precision and the accuracy that etch lines in the glass product so obtained are higher, obtain the glass plate of deeper etched pattern.
Description
Technical field
This utility model relates to glass for electronic product plate field, is specifically related to a kind of plating containing etching ink grain pattern
Film glass plate.
Background technology
The etching lines of glass surface mainly has two big classes in the market: one forms with mould high temperature hot pressing, though
So this method can form pattern on glass, but gained pattern dimension tolerance is bigger, it is difficult to the concordance of management and control figure and pattern
Transparency, thus products obtained therefrom is of low grade and weak effect.Another kind is the method using printing acid-proof ink to strengthen acid etching
Pattern-making, the ink of this method printing is thick, differentiates rate variance, it is impossible to produce more finely, finer and smoother texture pattern comes.As
Disclosed in patent application CN201410394473.4, the production method of a kind of glass surface 3D decorative pattern, comprises the steps: a, elder generation
Surface of plate glass before and after tempering is cleaned up, passes through silk-screen with corrosion-resistant ink by designing the silk screen of pattern in advance
Method in the glass front of 3D decorative pattern to be made, print pattern, silk-screen requires that ink thickness is 0.02-0.05mm, glass
The back side need not make the face of decorative pattern and all uses corrosion-resistant ink silk screen printing, is then dried by front and back；B, silk-screen is good
Glass put in etching solution, composition and the proportioning of described etching solution are prepared by weight percentage, water 70-75 part, catalyst 15-
5 parts, Fluohydric acid. 15-20 part, the time of etching according to pattern depth according to the speed 0.01mm/55-65 second calculate, the temperature of etching solution
Degree uses constant temperature 23-27 Celsius；C, glass will be processed take out, and put into and water is cleaned the etching solution on glass；After d, general's processing
Glass carries out taking off plating cleaning, drying is finished product.This invention uses and prints acidproof protection ink and HF etching pattern-making stricture of vagina
The method on road, the method makes the profile tolerance of pattern control within ± 0.05mm (i.e. 50 microns), but the method cannot obtain
To more exquisiteness lines accurately, namely the etched pattern that linewidth requirements is finer then can not be used the method.It addition, work as institute
Stating glass plate when being nonplanar 3D plate, if directly printing ink on 3D plate, then at curved surface, printing effect is the poorest.
Patent application CN201510128386 provides a kind of nano-pattern stamp mask version and preparation method thereof, and it is glass
Material, its surface has the setting pattern being made up of groove, and it is to utilize a base material to make；This base material has: a matrix, and it is
Glass material；Covering the film plating layer at this matrix surface, it is metal or metal-oxide material, the specially oxygen of ferrum+ferrum
Compound or the oxide of chromium+chromium；And cover the photoresist layer on this film plating layer；Wherein, the thickness range of this film plating layer
For 50-1000nm；This photoresist layer thickness range is 500-15000nm.The method the most first use metal etch liquid to base
Film plating layer on material is etched processing, and removes this film plating layer with local；Then hydrofluoric acid containing and the glass etching liquid of ammonium are used
It is etched the matrix on base material processing.Nano-pattern stamp mask version prepared by the method can be satisfied with nanometer well
The application of stamping technique.But the purpose of the program is to prepare nano-pattern stamp mask version, its lighttight metal or metal oxygen
Compound film plating layer is eventually present on mask, thus the program being not suitable in this utility model is prepared transparent containing erosion
Carve the glass plate of grain pattern.Even if it addition, using corresponding etching solution to remove its metal or metal-oxide film plating layer, gained
Precision and the etch depth of the etching grain pattern of glass plate also and are unsatisfactory for requirement of the present utility model.
Therefore, for solving the problems referred to above, when needing to prepare the more exquisite glass plate of a kind of etched pattern, this area needs
Develop a kind of new method preparing etched pattern on a glass and new product.
Utility model content
The purpose of this utility model is to provide a kind of lines more fine, and contour accuracy can control within ± 5 μm,
And live width is less than 50 microns, is even less than the glass plate of the etching grain pattern of 20 microns, especially containing etching grain pattern
3D glass plate.
Therefore, this utility model provides a kind of coated glass pane containing etching grain pattern, and described glass plate includes glass
The etching grain pattern 12 that substrate 11, silicon oxide film plating layer 14 and the film plating layer surface from glass substrate are recessed, described etching stricture of vagina
The lines of road pattern 12 comprises the etching lines that live width is less than 30 microns, and the thickness of described silicon oxide film plating layer 14 is 5
～200nm, etching grain pattern 12 is 3～20 microns from the degree of depth that glass substrate upper surface is recessed.
In this utility model one detailed description of the invention, described glass plate also includes and the figure of etching grain pattern 12
The hydrofluoric acid resistant photoresist layer 13 that shape is complementary, and the thickness of described hydrofluoric acid resistant photoresist layer 13 is 3～10 microns.
In this utility model one detailed description of the invention, the thickness of the described photoresist layer of resistance to HF 13 is 3～5 microns.
In this utility model one detailed description of the invention, it is 20 micro-for comprising live width in the lines of described etching grain pattern
The lines that rice is following.
In this utility model one detailed description of the invention, the lines of described etching grain pattern comprises live width be 10～
The lines of 15 microns.
In this utility model one detailed description of the invention, in described etching grain pattern, live width is less than 30 microns
Real area shared by lines is more than the 10% of the gross area of this etching grain pattern.
In this utility model one detailed description of the invention, live width is that the real area shared by the lines of less than 20 microns is
More than the 30% of the gross area of this etching grain pattern.
In this utility model one detailed description of the invention, described glass substrate (11) is flat glass or 3D curved surface glass
Glass, and described glass substrate is not for strengthen glass substrate.
This utility model also provides for the preparation method of a kind of glass plate containing etching grain pattern, comprises the steps:
Step a, glass substrate is cleaned up；Membranous layer of silicon oxide is set also in whole plating of the glass substrate surface cleaned up
Cleaning up, and the thickness of described membranous layer of silicon oxide is 5～200nm, after cleaning, on glass substrate coated surface, whole topcoating cloth is thick
Degree is the hydrofluoric acid resistant photoresistance of 3-10 μm pre-baked, then will finally need to form etching lines by the exposed and developed operation of light shield
The photoresistance development of the position of pattern is removed, and toasts described hydrofluoric acid resistant photoresistance subsequently；And be not required on a glass substrate make lines
The whole face of one side paste antiacid film；
Step b, the step a gained glass containing film plating layer and photoresist layer is put in hydrofluoric acid etch liquid etch, Fluohydric acid.
In etching solution, the concentration of HF is 1-20wt%；Hydrofluoric acid etch liquid corrosion carves described membranous layer of silicon oxide and glass, and it finally corrodes
The etch depth of glass is 3～20 microns, is taken out by the glass etched and cleans up in clear water；
Step c, the glass of step b gained is placed in photoresistance stripper solution whole peels off and remove photoresistance film, obtain described in contain
The sheet product of etching grain pattern.
In this utility model, the etch depth of the final etching glass of hydrofluoric acid etch liquid is 3～20 microns, and preferably 5～15 is micro-
Rice, more preferably 7～10 microns, method described in the utility model is particularly suited for the glass etching deeper to the hydrofluoric acid etch degree of depth
The making of grain pattern, ensures the etching precision of pattern while ensureing etch depth.
In this utility model one detailed description of the invention, the thickness of described membranous layer of silicon oxide is 10～100nm, for example,
20nm。
Contain on the light shield used in the exposure process of this utility model step a and etching grain pattern identical (or similar)
Pattern be to be light transmission part containing the pattern complementary with etching grain pattern on light transmission part, or described light shield.Have in one
In the embodiment of body, in step b hydrofluoric acid etch liquid, the concentration of HF is 5～15wt%, and the temperature of hydrofluoric acid etch is 20
～30 DEG C, etching period is according to depending on etch depth；More specifically, in hydrofluoric acid etch liquid, the concentration of HF is 10wt%, and hydrogen
The temperature of fluoric acid etching is 25 DEG C, and etching period is 80s.Skilled person will appreciate that, described hydrofluoric acid etch liquid can
Etching membranous layer of silicon oxide, can etch again glass, thus form etching lines after hydrofluoric acid etch on glass.
Beneficial effect: this utility model uses certain thickness hydrofluoric acid resistant photoresistance, can be accurately controlled photoresistance exposure
With the size of lines and precision after development, and by controlling the degree of depth of hydrofluoric acid etch glass so that the glass product stricture of vagina of processing
Road can accurately control.In this utility model, plating has set the membranous layer of silicon oxide of specific thicknesses, loses in the glass product so obtained
The precision on rag road is high and fine and smooth, and pattern fidelity is higher, obtains the glass plate of deeper etched pattern.
Accompanying drawing explanation
Fig. 1 is the glass front structural representation after certain step completes in product preparation process in this utility model；
Fig. 2 is that in this utility model in product preparation process and the side structure schematic diagram of products obtained therefrom, wherein Fig. 2-1 is
Completing the structural representation after plated film in step a, the structural representation after wherein Fig. 2-2 completes for step a, Fig. 2-3 is step b
Structural representation after completing, Fig. 2-4 complete for step c after product structure schematic diagram.
In figure, 11, glass substrate, 12, etching grain pattern, 13, hydrofluoric acid resistant photoresist layer, 14, membranous layer of silicon oxide.
Detailed description of the invention
Below by example, the most rapid detailed description detailed description of the invention of the present utility model.
Those skilled in the art know ground, photoresistance, also referred to as photoresist, are the light applied in many industrial process
Quick material.Such as it applies in photoetching technique, can engrave the coating of a pattern at material surface.Photoresistance divides two kinds,
Forward photoresistance and negative sense photoresistance.Forward photoresistance is that the part shining light can be dissolved in photoresistance developer solution, and does not shine the part of light
Photoresistance developer solution will not be dissolved in；It is to say, photoresistance itself is insoluble in developer solution, by the local photoresistance solution of illumination after exposure
From becoming little molecule, form the structure being readily soluble in developer solution.Negative sense photoresistance is that photoresistance itself (not shining the part of light) is readily soluble
In developer solution, and its part shining light will not be dissolved in photoresistance developer solution and (form the chemistry being not easily dissolved into developer solution after exposure
Structure).Photoresistance is mainly by resin, photosensitizer, and three kinds of compositions of solvent mix, photoresistance the most all with light shield and corresponding show
Shadow liquid with the use of, when photoresistance is peeled off by needs front, also can support the use with photoresistance stripper solution.It is to say, existing
In technology, photoresistance (specially hydrofluoric acid resistant photoresistance), developer solution and the general chemical composition of photoresistance stripper solution and mutually adapted
Relation is all content known in those skilled in the art.Photoresistance can be divided into dry film photoresistance and wet film light according to other mode
Resistance, and wherein dry film photoresistance conventional be negative sense photoresistance, and wet film photoresistance conventional be forward photoresistance, so can obtain the most smart
True exposure imaging result.
In a kind of detailed description of the invention of the present utility model, such as when using the wet film photoresistance of forward, if purpose be
Form the pattern of vein lines on glass substrate, then the pierced pattern of light shield is consistent with vein grain pattern or similar, through illumination
After, the photoresistance of openwork part is dissolved in developer solution by the irradiation of light, forms hollow out at vein grain pattern on a glass
Pattern, other large area is still that after illumination and to be covered by photoresistance.Hollow part is shape on the glass substrate through hydrofluoric acid etch
Become etching lines.Re-use photoresistance stripper solution by whole the stripping from glass plate of hydrofluoric acid resistant photoresist layer, then stay and etch
The vein grain pattern arrived, has thus reached the purpose of this utility model.
In this utility model all as a example by vein grain pattern, but skilled person will appreciate that use this utility model institute
The method of stating may be used for preparing the etching grain pattern of other any shape.
In this utility model, when being exposed photoresistance, 2D cover plate can use general mercury lamp exposure machine or radium-shine
Exposure machine, 3D cover plate then needs to use radium-shine exposure machine to expose.
Pattern in this utility model relies on Fluohydric acid. to embody the etching depth of glass, shows as the stricture of vagina of slightly glare
Road pattern, this pattern is without obvious color.In a kind of specific embodiment, described glass substrate is the glass base do not strengthened
Sheet.
Hydrofluoric acid resistant photoresistance used in this utility model belongs to ripe commodity, the EPG580 produced such as TaiWan, China light forever
Or the N-100 that POK company of Japan produces.The for example, TMAH of developer solution described in this utility model (tetramethylphosphonihydroxide hydroxide base amine), its
Concentration is 2～4wt%.The antiacid film used in this utility model is similarly a kind of convenience goods.In this utility model, it is used for losing
The hydrofluoric acid etch liquid of carved glass and membranous layer of silicon oxide equally can be by being purchased acquisition, wherein containing HF and other composition.
Photoresistance stripper solution in this utility model comprises ethanolamine and butyl carbitol, or described photoresistance stripper solution is hydrogen
Sodium oxide or potassium hydroxide solution；No matter which kind of photoresistance stripper solution can be by being purchased acquisition.First this utility model exists
On glass, plating sets one layer of membranous layer of silicon oxide, and the thickness of described membranous layer of silicon oxide is generally 5～200nm, for example with vacuum coating
Method plating sets described silicon oxide film.
In this utility model, the photoresistance pattern removed after development keeps consistent with final etched pattern.This utility model
In, it is that photoresistance soaks 5min in hydrofluoric acid etch liquid that the acid resistance of described hydrofluoric acid resistant photoresistance requires, photoresistance is without coming off.
In a kind of specific embodiment, in step a, pre-baked temperature is 100-140 DEG C, and the time is 120-500s, exposes
Light energy is 100-300mJ/cm2, developer solution is TMAH, and concentration is 3-4%, or developer solution be concentration be 0.01～2% (remaining
Component is the additive such as moisture content and interfacial agent) KOH, its corresponding other photoresistance.Development temperature is 21～25 DEG C, the time
For 80-200s.Hard baking temperature is 110-150 DEG C, and the time is 2-30min.
Embodiment 1
The purpose of the present embodiment is to prepare a kind of glass plate containing etching grain pattern, comprises the steps:
Step a, glass substrate is cleaned up；Membranous layer of silicon oxide is set also in whole plating of the glass substrate surface cleaned up
Cleaning up, and the thickness of described membranous layer of silicon oxide is 5～200nm, resulting structures is as shown in Fig. 2-1.At glass base after Xi Jinging
On sheet coated surface, whole coating thickness is the hydrofluoric acid resistant photoresistance of 3-10 μm pre-baked, then will by the exposed and developed operation of light shield
The final photoresistance needing to form the position of etching grain pattern develops and removes, and toasts described hydrofluoric acid resistant photoresistance subsequently；And at glass
The whole face of one side being not required to make lines on glass substrate pastes antiacid film；Resulting structures is as shown in Fig. 2-2.
Step b, the step a gained glass containing film plating layer and photoresist layer is put in hydrofluoric acid etch liquid etch, Fluohydric acid.
In etching solution, the concentration of HF is 1-20wt%；Hydrofluoric acid etch liquid corrosion carves described membranous layer of silicon oxide and glass, and it finally corrodes
The etch depth of glass is 3～20 microns, is taken out by the glass etched and cleans up in clear water；Resulting structures such as Fig. 2-3
Shown in.
Step c, the glass of step b gained is placed in photoresistance stripper solution whole peels off and remove photoresistance film, obtain described in contain
The sheet product of etching grain pattern.Resulting structures is as in Figure 2-4.
Use method described in the utility model can obtain a kind of lines very fine, live width less than 50 microns, the least
In 20 microns etching grain pattern glass plate, on gained glass plate etching lines the degree of depth up to 7～20 microns, pattern
Contour accuracy can be controlled in ± 5 μm within.
The foregoing is only preferred embodiment of the present utility model, be not limited to this utility model, for this
For the technical staff in field, this utility model can have various modifications and variations.All in spirit of the present utility model and principle
Within, any modification, equivalent substitution and improvement etc. made, within should be included in protection domain of the present utility model.
Claims (8)
1., containing a coated glass pane for etching grain pattern, described glass plate includes glass substrate (11), silicon oxide film plating layer
(14) the etching grain pattern (12) that film plating layer surface with from glass substrate is recessed, the lines of described etching grain pattern (12)
In comprise the etching lines that live width is less than 30 microns, and the thickness of described silicon oxide film plating layer (14) is 5～200nm, etching
Grain pattern (12) is 3～20 microns from the degree of depth that glass substrate upper surface is recessed.
Glass plate the most according to claim 1, it is characterised in that also include on described glass plate and etching grain pattern
(12) the hydrofluoric acid resistant photoresist layer (13) of pattern complementary, and the thickness of described hydrofluoric acid resistant photoresist layer (13) is 3～10 microns.
Glass plate the most according to claim 2, it is characterised in that the thickness of the described photoresist layer of resistance to HF (13) is 3～5 micro-
Rice.
4. according to the glass plate described in any one in claims 1 to 3, it is characterised in that the stricture of vagina of described etching grain pattern
Road comprises the lines that live width is less than 20 microns.
Glass plate the most according to claim 4, it is characterised in that comprising live width in the lines of described etching grain pattern is
The lines of 10～15 microns.
6. according to the glass plate described in any one in claims 1 to 3, it is characterised in that in described etching grain pattern, line
Real area shared by the lines of a width of less than 30 microns is more than the 10% of the gross area of this etching grain pattern.
Glass plate the most according to claim 6, it is characterised in that in described etching grain pattern, live width be 20 microns with
Under the gross area that the real area shared by lines is this etching grain pattern more than 30%.
8. according to the glass plate described in any one in claims 1 to 3, it is characterised in that described glass substrate (11) is flat
Surface glass or 3D bend glass, and described glass substrate is not for strengthen glass substrate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620819944.6U CN205838841U (en) | 2016-07-29 | 2016-07-29 | A kind of coated glass pane containing etching grain pattern |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620819944.6U CN205838841U (en) | 2016-07-29 | 2016-07-29 | A kind of coated glass pane containing etching grain pattern |
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| CN205838841U true CN205838841U (en) | 2016-12-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107663028A (en) * | 2016-07-29 | 2018-02-06 | 蓝思科技（长沙）有限公司 | A kind of preparation method and glass plate of the coated glass pane of the grain pattern containing etching |
-
2016
- 2016-07-29 CN CN201620819944.6U patent/CN205838841U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107663028A (en) * | 2016-07-29 | 2018-02-06 | 蓝思科技（长沙）有限公司 | A kind of preparation method and glass plate of the coated glass pane of the grain pattern containing etching |
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