CN107653439A - 一种为蒸镀金属上片的方法 - Google Patents

一种为蒸镀金属上片的方法 Download PDF

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CN107653439A
CN107653439A CN201710832890.6A CN201710832890A CN107653439A CN 107653439 A CN107653439 A CN 107653439A CN 201710832890 A CN201710832890 A CN 201710832890A CN 107653439 A CN107653439 A CN 107653439A
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chip
drop
silicon chip
photoresist
silicon
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张家鑫
高美华
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SHANXI GUOHUI PHOTOELECTRIC TECHNOLOGY Co Ltd
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SHANXI GUOHUI PHOTOELECTRIC TECHNOLOGY Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明涉及金属蒸镀中的上片方法,具体是一种为蒸镀金属上片的方法。本发明解决了现有上片方法导致蒸镀不完整、容易对芯片造成损伤的问题。一种为蒸镀金属上片的方法,该方法是采用如下步骤实现的:a.利用滴管在硅片的正面滴五滴光刻胶;b.将芯片的背面中央与第一滴光刻胶相贴,将芯片的背面四角分别与第二至第五滴光刻胶相贴;c.将硅片和芯片置于热板上,由此利用热板对五滴光刻胶进行烘烤,从而使得五滴光刻胶固化;d.固化完成后,将硅片和芯片从热板上取下;然后,将硅片和芯片固定于镀锅上,由此利用镀锅在芯片的正面蒸镀金属;f.蒸镀完成后,将硅片和芯片从镀锅上取下;然后,将芯片从硅片上剥离下来。本发明适用于金属蒸镀。

Description

一种为蒸镀金属上片的方法
技术领域
本发明涉及金属蒸镀中的上片方法,具体是一种为蒸镀金属上片的方法。
背景技术
金属蒸镀是半导体器件工艺中重要的工艺之一,其决定着器件的电性参数。在进行金属蒸镀时,倘若待蒸镀的芯片为破片或者小的实验片,则无法将其直接固定于镀锅上进行蒸镀,而需要利用上片方法将其固定于镀锅上进行蒸镀。现有的上片方法主要包括两种:第一种上片方法是利用夹具将待蒸镀的芯片夹持固定于镀锅上进行蒸镀。此种上片方法存在的问题是:夹具在夹持芯片时会对芯片的蒸镀区域形成遮挡,由此导致蒸镀不完整。第二种上片方法是利用耐高温胶带将待蒸镀的芯片粘贴固定于镀锅上进行蒸镀。此种方法存在的问题是:操作难度大,由此容易对芯片造成损伤。基于此,有必要发明一种全新的上片方法,以解决现有上片方法导致蒸镀不完整、容易对芯片造成损伤的问题。
发明内容
本发明为了解决现有上片方法导致蒸镀不完整、容易对芯片造成损伤的问题,提供了一种为蒸镀金属上片的方法。
本发明是采用如下技术方案实现的:
一种为蒸镀金属上片的方法,该方法是采用如下步骤实现的:
a.选取硅片;然后,利用滴管在硅片的正面滴五滴光刻胶;其中,第一滴光刻胶位于硅片的正面中央,第二至第五滴光刻胶均位于第一滴光刻胶的周围,且第二至第五滴光刻胶围绕硅片的轴线等距排列;
b.选取芯片;然后,将芯片的背面中央与第一滴光刻胶相贴,将芯片的背面四角分别与第二至第五滴光刻胶相贴,由此通过五滴光刻胶将芯片粘贴于硅片上;
c.将硅片和芯片置于热板上,由此利用热板对五滴光刻胶进行烘烤,从而使得五滴光刻胶固化;
d.固化完成后,将硅片和芯片从热板上取下;然后,将硅片和芯片固定于镀锅上,由此利用镀锅在芯片的正面蒸镀金属;
f.蒸镀完成后,将硅片和芯片从镀锅上取下;然后,将芯片从硅片上剥离下来。
与现有上片方法相比,本发明所述的一种为蒸镀金属上片的方法具有如下优点:一、与第一种上片方法相比,本发明不再利用夹具夹持芯片,而是利用硅片和光刻胶将芯片固定于镀锅上进行蒸镀,因此本发明不会对芯片的蒸镀区域形成遮挡,从而使得蒸镀变得完整。二、与第二种上片方法相比,本发明不再利用耐高温胶带粘贴芯片,而是利用硅片和光刻胶将芯片固定于镀锅上进行蒸镀,因此本发明的操作难度更小,从而避免了对芯片造成损伤。
本发明有效解决了现有上片方法导致蒸镀不完整、容易对芯片造成损伤的问题,适用于金属蒸镀。
附图说明
图1是本发明中步骤a的示意图。
图2是本发明中步骤b的示意图。
图中:1-硅片,2-光刻胶,3-芯片。
具体实施方式
一种为蒸镀金属上片的方法,该方法是采用如下步骤实现的:
a.选取硅片1;然后,利用滴管在硅片1的正面滴五滴光刻胶2;其中,第一滴光刻胶2位于硅片1的正面中央,第二至第五滴光刻胶2均位于第一滴光刻胶2的周围,且第二至第五滴光刻胶2围绕硅片1的轴线等距排列;
b.选取芯片3;然后,将芯片3的背面中央与第一滴光刻胶2相贴,将芯片3的背面四角分别与第二至第五滴光刻胶2相贴,由此通过五滴光刻胶2将芯片3粘贴于硅片1上;
c.将硅片1和芯片3置于热板上,由此利用热板对五滴光刻胶2进行烘烤,从而使得五滴光刻胶2固化;
d.固化完成后,将硅片1和芯片3从热板上取下;然后,将硅片1和芯片3固定于镀锅上,由此利用镀锅在芯片3的正面蒸镀金属;
f.蒸镀完成后,将硅片1和芯片3从镀锅上取下;然后,将芯片3从硅片1上剥离下来。

Claims (1)

1.一种为蒸镀金属上片的方法,其特征在于:该方法是采用如下步骤实现的:
a.选取硅片(1);然后,利用滴管在硅片(1)的正面滴五滴光刻胶(2);其中,第一滴光刻胶(2)位于硅片(1)的正面中央,第二至第五滴光刻胶(2)均位于第一滴光刻胶(2)的周围,且第二至第五滴光刻胶(2)围绕硅片(1)的轴线等距排列;
b.选取芯片(3);然后,将芯片(3)的背面中央与第一滴光刻胶(2)相贴,将芯片(3)的背面四角分别与第二至第五滴光刻胶(2)相贴,由此通过五滴光刻胶(2)将芯片(3)粘贴于硅片(1)上;
c.将硅片(1)和芯片(3)置于热板上,由此利用热板对五滴光刻胶(2)进行烘烤,从而使得五滴光刻胶(2)固化;
d.固化完成后,将硅片(1)和芯片(3)从热板上取下;然后,将硅片(1)和芯片(3)固定于镀锅上,由此利用镀锅在芯片(3)的正面蒸镀金属;
f.蒸镀完成后,将硅片(1)和芯片(3)从镀锅上取下;然后,将芯片(3)从硅片(1)上剥离下来。
CN201710832890.6A 2017-09-15 2017-09-15 一种为蒸镀金属上片的方法 Pending CN107653439A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102925859A (zh) * 2011-10-23 2013-02-13 常州碳元科技发展有限公司 一种具有保护层结构的碳层材料的制备方法
CN103071605A (zh) * 2013-02-28 2013-05-01 铜陵嘉禾电子科技有限公司 一种晶体上片点胶机
CN103258773A (zh) * 2013-05-21 2013-08-21 合肥彩虹蓝光科技有限公司 半导体元件镀膜制程方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102925859A (zh) * 2011-10-23 2013-02-13 常州碳元科技发展有限公司 一种具有保护层结构的碳层材料的制备方法
CN103071605A (zh) * 2013-02-28 2013-05-01 铜陵嘉禾电子科技有限公司 一种晶体上片点胶机
CN103258773A (zh) * 2013-05-21 2013-08-21 合肥彩虹蓝光科技有限公司 半导体元件镀膜制程方法

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