CN107633865A - A kind of digital independent device and method of nonvolatile memory - Google Patents
A kind of digital independent device and method of nonvolatile memory Download PDFInfo
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Abstract
The invention discloses a kind of digital independent device and method of nonvolatile memory.The device includes：Comparator is read, for according to the read requests received, by the cell voltage of memory cell compared with reading reference voltage, and exporting reading result；Verify comparator, for by the cell voltage of memory cell compared with verifying reference voltage, and output verification result；Wherein, the verification reference voltage is less than the reading reference voltage；Offset address recording unit, for according to result and check results are read, when determining unit voltage is higher than setting threshold value, determining the offset units address that memory cell is offset storage unit, then record-shifted memory cell；Read and correct unit, if hit offset units address for the read requests received, it is determined that the reading result to offset storage unit is setting value, and suppress to read the output of comparator.The present invention can reduce misreading in nonvolatile memory read operation, improve reliability.
Description
Technical field
The present invention relates to the digital independent dress of memory technology field, more particularly to a kind of nonvolatile memory
Put and method.
Background technology
With the continuous popularization of electronic equipment, people are for high density and the nonvolatile memory of low-power consumption
Demand is growing day by day.Reliability is to evaluate an important indicator of memory.Reliability refers to that product is providing
Under the conditions of and the stipulated time in complete as defined in function.
Data retention is the important parameter for evaluating reliability of nonvolatile memories.Data retention refers to non-
The data of volatile memory storage through not having distortion or loss, the energy that still can effectively read after a period of time
Power.Because nonvolatile memory has the characteristics of power failure data is not lost, therefore, it has certain number
According to confining force, and the data of its storage can be read by read operation.
For memory cell, the quantity of electric charge stored in floating boom determines the threshold voltage of memory cell, and deposits
The threshold voltage of storage unit then determines that memory cell is data storage " 0 ", or data storage " 1 ".But
Because some external factor influence, the electric charge increase stored in floating boom can be caused, so as to cause memory cell threshold
The rise of threshold voltage, over time, after threshold voltage is increased to certain value, in memory cell
The data of storage can change, and when user carries out read operation next time to the memory cell again, can cause to miss
Read, cause the reliability of nonvolatile memory to reduce.
The content of the invention
The present invention provides a kind of digital independent device and method of nonvolatile memory, non-volatile to reduce
Misreading during memory read operation, improve the reliability of data of nonvolatile storage.
In a first aspect, the embodiments of the invention provide a kind of digital independent device of nonvolatile memory, should
Device includes：
Read comparator, output of the input for reading comparator with reading reference voltage and memory cell
End is connected, for according to the read requests received, the cell voltage of the memory cell to be referred to reading
Voltage is compared, and exports reading result；
Verify comparator, the input of the verification comparator and the output of verification reference voltage and memory cell
End is connected, for compared with verifying reference voltage, and the cell voltage of the memory cell to be exported into school
Test result；Wherein, the verification reference voltage is less than the reading reference voltage；
Offset address recording unit, it is connected with the reading comparator and the verification comparator, for basis
Result and check results are read, when determining unit voltage is higher than setting threshold value, determine the memory cell
For offset storage unit, then the offset units address of the offset storage unit is recorded；
Read and correct unit, be connected with the offset address recording unit, if please for the reading received
When asking the hit offset units address, it is determined that the reading result to the offset storage unit is setting value,
And suppress the output of the reading comparator.
In such scheme, optionally, if the cell voltage is more than verification reference voltage, and it is less than
Read reference voltage, it is determined that the memory cell is offset storage unit；
If the cell voltage is less than verification reference voltage and reads reference voltage, it is determined that the storage is single
Member is erasing memory cell；
If the cell voltage is more than verification reference voltage and reads reference voltage, it is determined that the storage is single
Member is memory cells.
In such scheme, optionally, the setting value is " 1 ".
In such scheme, optionally, read the input of comparator respectively with the drain electrode of memory cell and
The drain electrode for reading reference memory unit is connected, verify the input of comparator respectively with the drain electrode of memory cell and
The drain electrode of verification reference memory unit is connected,
Wherein, the drain electrode of memory cell is connected with first resistor, and the other end of first resistor is connected with power supply,
The source ground of memory cell；
The drain electrode for reading reference unit is connected with second resistance, and the other end of second resistance is connected with power supply, reads
Take the source ground of reference unit；
The drain electrode of verification reference unit is connected with 3rd resistor, and the other end of 3rd resistor is connected with power supply, school
Test the source ground of reference unit.
Second aspect, the embodiment of the present invention additionally provide a kind of method for reading data of nonvolatile memory,
Performed using the digital independent device of the nonvolatile memory of first aspect present invention offer, this method bag
Include：
According to the read requests received, the cell voltage of memory cell is read；
By reading comparator by the cell voltage compared with reading reference voltage, knot is read with output
Fruit；
By verifying comparator by the cell voltage compared with verifying reference voltage, with output verification knot
Fruit；
If according to reading result and check results, when determining unit voltage is higher than setting threshold value, it is determined that
Memory cell is offset storage unit, then passes through offset storage unit described in offset address recording unit records
Offset units address；
If the read requests received hit the offset units address, unit determination is corrected by reading
Reading result to the offset storage unit is setting value.
In such scheme, optionally, if the cell voltage is more than verification reference voltage, and it is less than
Read reference voltage, it is determined that the memory cell is offset storage unit；
If the cell voltage is less than verification reference voltage and reads reference voltage, it is determined that the storage is single
Member is erasing memory cell；
If the cell voltage is less than verification reference voltage and reads reference voltage, it is determined that the storage is single
Member is memory cells.
In such scheme, optionally, the setting value is " 1 ".
In such scheme, optionally, the read requests received are specially：The grid of memory cell,
The grid for reading reference memory unit and the grid for verifying memory cell apply read voltage.
In such scheme, optionally, read voltage size is 5V-8V；
During the embodiment of the present invention in memory cell by reading data procedures, according to reading result and check results,
When determining unit voltage is higher than setting threshold value, offset storage unit is determined and recorded, being read in next time should
During memory cell, the reading result of the memory cell is determined and exported as setting value, it is non-volatile so as to reduce
Misreading during property memory read operation, improves the reliability of data of nonvolatile storage.
Brief description of the drawings
Fig. 1 is that a kind of structure of the digital independent device of nonvolatile memory in the embodiment of the present invention one is shown
It is intended to；
Fig. 2 is a kind of reading ratio of the digital independent device of nonvolatile memory in the embodiment of the present invention three
Compared with device and the structural representation of verification comparator；
Fig. 3 is that a kind of flow of the method for reading data of nonvolatile memory in the embodiment of the present invention four is shown
It is intended to.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this
The specific embodiment of place description is used only for explaining the present invention, rather than limitation of the invention.Also need in addition
It is noted that for the ease of description, part related to the present invention illustrate only in accompanying drawing and not all knot
Structure.
Embodiment one
Fig. 1 is a kind of structure of the digital independent device for nonvolatile memory that the embodiment of the present invention one provides
Schematic diagram, the present embodiment are applicable to the situation of memory read data, as shown in figure 1, the present invention is implemented
A kind of digital independent device for nonvolatile memory that example provides, including read comparator 110, verification ratio
Compared with device 120, offset address recording unit 130 and read correction unit 140.
Wherein, the input for reading comparator 110 is connected with reading the output end of reference voltage and memory cell,
The read requests received for basis, by the cell voltage of memory cell compared with reading reference voltage,
And export reading result.
During non-volatile memory read operations, if memory cell is to be deposited by the erasing of erasing operation
Storage unit, its drain current is larger, if memory cell is the memory cells by programming operation, it leaks
Electrode current is smaller, by the way that the comparison of the drain current of memory cell and reference current can obtain into memory cell
Data storage.The comparison of the drain current and reference current of memory cell can by circuit conversion be voltage ratio
Compared with so as to obtain the data storage of memory cell by voltage comparator.
Exemplary, it can be reverse voltage comparator to read comparator, and the in-phase end access of voltage comparator is deposited
The output end of storage unit, reference voltage is read in the end of oppisite phase access of voltage comparator, when the unit of memory cell
When voltage is more than reading reference voltage, it is " 0 " to read result, illustrates that the memory cell passes through programming operation,
Data storage is " 0 "；When the cell voltage of memory cell is less than reference voltage, it is " 1 " to read result,
Illustrate that the memory cell passes through erasing operation, data storage is " 1 ".
The input for verifying comparator 120 is connected with the output end of verification reference voltage and memory cell, is used for
By the cell voltage of memory cell compared with verifying reference voltage, and output verification result；Wherein, institute
State verification reference voltage and be less than the reading reference voltage；
Exemplary, verification comparator can be reverse voltage comparator, and the in-phase end access of voltage comparator is deposited
The output end of storage unit, the end of oppisite phase access verification reference voltage of voltage comparator, when the unit of memory cell
When voltage is more than verification reference voltage, check results are " 0 "；When the cell voltage of memory cell is less than verification
During reference voltage, check results are " 1 ".
Offset address recording unit 130, it is connected with reading comparator and verification comparator, for according to reading
As a result and check results, when determining unit voltage is higher than setting threshold value, determine that memory cell is deposited for skew
The offset units address of storage unit, then record-shifted memory cell；
Exemplary, record-shifted element address can be by the current reading memory of address write-in of offset units
Any designated length free memory locations in or any memory specified of write-in in.
Read and correct unit 140, be connected with offset address recording unit, if please for the reading received
When asking hit offset units address, it is determined that the reading result to offset storage unit is setting value, and suppress to read
Take the output of comparator.
Exemplary, the address of the offset storage unit recorded in memory is loaded onto in any register,
If the memory unit address currently read is identical with the address loaded in register, then it is assumed that read requests are ordered
Middle offset units address, then the reading result of the memory cell is determined and exported as setting value.
It is exemplary, the reading result of memory cell determine and export can be for setting value, if setting value is
" 1 ", output end and " 1 " progress or the computing of result can will be read, if setting value is " 0 ", will can be read
Take output end and " 0 " progress and the computing of result.
The technical scheme of the present embodiment, by according to the reading result and the school of verification comparator for reading comparator
Result is tested, when determining unit voltage is higher than setting threshold value, determines and records offset storage unit so that
When next time reads the memory cell, read result and determined and exported as setting value, it is non-volatile so as to reduce
Misreading during property memory read operation, improves the reliability of data of nonvolatile storage.
Embodiment two
Embodiment two is a kind of digital independent device of the nonvolatile memory provided the embodiment of the present invention one
Further explanation.In the device described in embodiment one, offset address recording unit is specifically used for：If
The cell voltage is more than verification reference voltage, and less than reading reference voltage, it is determined that the memory cell
For offset storage unit；
If the cell voltage is less than verification reference voltage and reads reference voltage, it is determined that the storage is single
Member is erasing memory cell；
If the cell voltage is more than verification reference voltage and reads reference voltage, it is determined that the storage is single
Member is memory cells.
Setting value is " 1 ".
Non-volatile memory cells can cause the electricity stored in floating boom because the factors such as read voltage influence
Lotus increases, so as to cause the rise of memory cell threshold voltage.Stored for the erasing Jing Guo erasing operation single
For member, after threshold voltage is increased to certain value, wiping the data storage of memory cell will be changed into from " 1 "
“0”.During threshold voltage is elevated, the drain current of memory cell reduces, and its cell voltage also can
There is corresponding change, preferable cell voltage accordingly increases.Read by setting to be less than verification reference voltage
Reference voltage, if the change of storage element voltage causes check results to change, and do not tie reading
Fruit changes, it is determined that the memory cell is offset storage unit.I.e. in memory cell read operation process
In, for the erasing memory cell not offset seriously, its drain current is larger, and cell voltage is less than verification
Reference voltage and reading reference voltage, it is " 1 " to read result and check results；For serious skew occurs
Memory cell is wiped, when threshold voltage is increased to certain value, is read because verification reference voltage sets to be less than
Reference voltage, then the cell voltage of memory cell can be made to be more than verification reference voltage, and less than reading with reference to electricity
Pressure, at this moment check results are " 0 ", and it is " 1 " to read result, and it is offset storage list to illustrate the memory cell
Member；For memory cells, its drain current is smaller, and cell voltage is more than verification reference voltage and reading
Reference voltage, it is " 0 " to read result and check results.It is " 1 " by setting value, may be such that generation is serious
It is " 1 " that the reading result of the erasing memory cell of skew, which forces output, avoids, because threshold voltage raises, leading
The data storage of erasing memory cell is caused to be changed into " 0 " from " 1 ", so as to cause situation about misreading.
The technical scheme of the present embodiment, by offset address recording unit, can detect that offset storage unit,
Memory cell and memory cells are wiped, and can not up to cause storage in the threshold voltage value of memory cell
Before data variation, the erasing memory cell that threshold voltage occurs seriously to offset effectively is recorded, is read in next time
During the unit, " 1 " is set to by the way that result setting value will be read, can be prevented because the factors such as read voltage influence,
Electric charge increase is stored in floating boom, causes memory cell threshold voltage to raise, so that erasing memory cell
Data storage is changed into " 0 " from " 1 ", causes situation about misreading, so as to improve data of nonvolatile storage
Reliability.
Embodiment three
Fig. 2 is a kind of reading of the digital independent device for nonvolatile memory that the embodiment of the present invention three provides
The structural representation of comparator and verification comparator.Embodiment three is one provided the above embodiment of the present invention
Comparator is read in the digital independent device of kind nonvolatile memory and verification comparator further illustrates.Read
The input of comparator is taken to be connected respectively with the drain electrode of memory cell and the drain electrode of reading reference memory unit, school
The input for testing comparator is connected with the drain electrode of memory cell and the drain electrode of verification reference memory unit respectively,
Wherein, the drain electrode of memory cell is connected with first resistor, and the other end of first resistor is connected with power supply,
The source ground of memory cell；
The drain electrode for reading reference unit is connected with second resistance, and the other end of second resistance is connected with power supply, reads
Take the source ground of reference unit；
The drain electrode of verification reference unit is connected with 3rd resistor, and the other end of 3rd resistor is connected with power supply, school
Test the source ground of reference unit.
Preferably, as shown in Fig. 2 it is voltage comparator SA to read comparator, voltage comparator SA's is same
Phase end and memory cell CADrain electrode be connected, memory cell CADrain electrode and first resistor RAOne end be connected,
Memory cell CASource ground, first resistor RAThe other end and power supply VCCIt is connected, voltage comparator SA
End of oppisite phase with reading reference memory unit CRDrain electrode be connected, read reference memory unit CRDrain electrode and the
Two resistance RROne end be connected, read reference memory unit CRSource ground, second resistance RRThe other end
With power supply VCCIt is connected, wherein RA=RR.Comparator SA is read by by memory cell CADrain voltage VAWith
Read reference memory unit CRDrain voltage VrefCompare to obtain and read result.Due to VA=VCC-RAIA,
Vref=VCC-RRIrefAnd RA=RR, then I is worked asA>IrefWhen, VA<Vref, SA output reading results " 1 "；Work as IA<Iref
When, VA>Vref, SA output reading results " 0 ".
Verification comparator is voltage comparator SA1, voltage comparator SA1 in-phase end and memory cell CA's
Drain electrode is connected, voltage comparator SA1 end of oppisite phase and verification reference memory unit CR1Drain electrode be connected, verify
Reference memory unit CR1Drain electrode and 3rd resistor RR1One end be connected, verification reference memory unit CR1Source
Pole is grounded, 3rd resistor RR1The other end and power supply VCCIt is connected, wherein RR1=RA.Verification comparator pass through by
Memory cell CADrain voltage VAWith verifying reference memory unit CR1Drain voltage Vref1Compare and verified
As a result.Due to VA=VCC-RAIA, Vref1=VCC-RR1Iref1And RR1=RA, then I is worked asA>Iref1When, VA<Vref1, SA1
Output verification result " 1 "；Work as IA<Iref1When, VA>Vref1, SA1 output verifications result " 0 ".
Because the factors such as read voltage influence, the electric charge increase stored in floating boom can be caused, so as to cause storage single
The rise of first threshold voltage.In the reading of memory cell, if threshold voltage raises, storage can be caused single
First drain current IAReduce, i.e. memory cell drain voltage VARise, therefore, memory cell drain voltage VA
Change can reflect the variation tendency of memory cell threshold voltage.If memory cell is by erasing operation
Memory cell is wiped, and threshold voltage does not occur seriously to offset, then low threshold voltage is presented in memory cell, i.e.,
VAIt is smaller so that VA<Vref, VA<Vref1, i.e. SA output reading results " 1 ", SA1 output verifications result " 1 "；
If threshold voltage raises, VAAlso can raise, due to Vref1<Vref, work as VAWhen being increased to certain value, V can be madeA<Vref,
VA>Vref1, i.e. SA output reading results " 1 ", SA1 output verifications result " 0 ", it may be determined that now storage is single
Serious skew occurs for the threshold voltage of member, if threshold voltage continues to raise, will cause VA>Vref, that is, read
As a result it is " 0 " at this moment to read result to be wrong, by the way that the reading result of the memory cell is determined and defeated
Go out for " 1 ", then can avoid misreading phenomenon.If memory cell is the memory cells by programming operation,
Then high threshold voltage, i.e. V is presented in memory cellAIt is larger so that VA>Vref, VA>Vref1, i.e. SA output readings
As a result " 0 ", SA1 output verifications result " 0 ".
Exemplary, the resistance of first resistor, second resistance and 3rd resistor can be with unequal.Control can be passed through
Make and read reference memory unit with verifying the electric charge of floating boom storage in reference memory unit to control reading reference to deposit
The threshold voltage of storage unit and verification reference memory unit, and then determine to read reference voltage with verification with reference to electricity
Pressure.
The technical scheme of the present embodiment, by the way that the input drain electrode with memory cell respectively of comparator will be read
It is connected with the drain electrode for reading reference memory unit, verifies the input drain electrode with memory cell respectively of comparator
Drain electrode with verification reference memory unit is connected, and obtains reading result and check results, and according to reading result
Offset storage unit is determined and recorded with check results so that when next time reads the memory cell, is read
As a result determine and export as setting value, ask misreading during read operation so as to reduce non-volatile memories, carry
The reliability of high data of nonvolatile storage.
Example IV
Fig. 3 is a kind of flow of the method for reading data for nonvolatile memory that the embodiment of the present invention four provides
Schematic diagram, performed based on the digital independent device of any nonvolatile memory in above-described embodiment.
The read requests that step 310, basis receive, read the cell voltage of memory cell；
Preferably, the read requests received are specially：The grid of memory cell, read reference memory unit
Grid and verify memory cell grid apply read voltage.
Preferably, the size of read voltage is 5V-8V.
Step 320, by reading comparator by cell voltage compared with reading reference voltage, with output
Read result；
Step 330, by verifying comparator by cell voltage compared with verifying reference voltage, with output
Check results；
Need exist for explanation is that the execution sequence of step 320 and step 330 is not construed as limiting, and can sequentially be held
OK, step 330 can also be first carried out, then performs step 320, can also be performed parallel.
If step 340, according to result and check results are read, in determining unit voltage higher than setting thresholding
During value, it is offset storage unit to determine memory cell, then passes through offset address recording unit records offset storage
The offset units address of unit；
Preferably, if the cell voltage is more than verification reference voltage, and less than reference voltage is read, then
It is offset storage unit to determine the memory cell；
If the cell voltage is less than verification reference voltage and reads reference voltage, it is determined that the storage is single
Member is erasing memory cell；
If the cell voltage is less than verification reference voltage and reads reference voltage, it is determined that the storage is single
Member is memory cells.
If step 350, the read requests received hit offset units address, list is corrected by reading
Member determines that the reading result to offset storage unit is setting value.
Preferably, setting value is " 1 ".
The technical scheme of the present embodiment, by according to the reading result and the school of verification comparator for reading comparator
Result is tested, when determining unit voltage is higher than setting threshold value, determines and records offset storage unit so that
When next time reads the memory cell, read result and determined and exported as setting value, it is non-volatile so as to reduce
Property storage ask read operation during misread, improve the reliability of data of nonvolatile storage.
The above method can be performed by the device that the embodiment of the present invention one to three is provided, and it is corresponding to possess said apparatus
Function and beneficial effect.Not ins and outs of detailed description in the present embodiment, reference can be made to the present invention is implemented
The device that example one to three is provided.
Pay attention to, above are only presently preferred embodiments of the present invention and institute's application technology principle.Those skilled in the art
It will be appreciated that the invention is not restricted to specific embodiment described here, can enter for a person skilled in the art
Row is various significantly to be changed, readjust and substitutes without departing from protection scope of the present invention.Therefore, though
So the present invention is described in further detail by above example, but the present invention be not limited only to
Upper embodiment, without departing from the inventive concept, other more equivalent embodiments can also be included,
And the scope of the present invention is determined by scope of the appended claims.
Claims (9)
- A kind of 1. digital independent device of nonvolatile memory, it is characterised in that including：Read comparator, output of the input for reading comparator with reading reference voltage and memory cell End is connected, for according to the read requests received, the cell voltage of the memory cell to be referred to reading Voltage is compared, and exports reading result；Verify comparator, the input of the verification comparator and the output of verification reference voltage and memory cell End is connected, for compared with verifying reference voltage, and the cell voltage of the memory cell to be exported into school Test result；Wherein, the verification reference voltage is less than the reading reference voltage；Offset address recording unit, it is connected with the reading comparator and the verification comparator, for basis Result and check results are read, when determining unit voltage is higher than setting threshold value, determine the memory cell For offset storage unit, then the offset units address of the offset storage unit is recorded；Read and correct unit, be connected with the offset address recording unit, if please for the reading received When asking the hit offset units address, it is determined that the reading result to the offset storage unit is setting value, And suppress the output of the reading comparator.
- 2. device according to claim 1, it is characterised in that：The offset address recording unit is specific For：If the cell voltage is more than verification reference voltage, and less than reading reference voltage, it is determined that it is described Memory cell is offset storage unit；If the cell voltage is less than verification reference voltage and reads reference voltage, it is determined that the storage is single Member is erasing memory cell；If the cell voltage is more than verification reference voltage and reads reference voltage, it is determined that the storage is single Member is memory cells.
- 3. device according to claim 1, it is characterised in that：The setting value is " 1 ".
- 4. according to any described devices of claim 1-3, it is characterised in that described to read the defeated of comparator Enter end respectively with the drain electrode of memory cell and the drain electrode of reading reference memory unit to be connected, the verification comparator Input respectively with the drain electrode of memory cell and verifying the drain electrode of reference memory unit and being connected,Wherein, the drain electrode of memory cell is connected with first resistor, and the other end of first resistor is connected with power supply, The source ground of memory cell；The drain electrode for reading reference unit is connected with second resistance, and the other end of second resistance is connected with power supply, reads Take the source ground of reference unit；The drain electrode of verification reference unit is connected with 3rd resistor, and the other end of 3rd resistor is connected with power supply, school Test the source ground of reference unit.
- It is any described non-using claim 1-4 5. a kind of method for reading data of nonvolatile memory The digital independent device of volatile memory performs, it is characterised in that methods described includes：According to the read requests received, the cell voltage of memory cell is read；By reading comparator by the cell voltage compared with reading reference voltage, knot is read with output Fruit；By verifying comparator by the cell voltage compared with verifying reference voltage, with output verification knot Fruit；If according to reading result and check results, when determining unit voltage is higher than setting threshold value, it is determined that Memory cell is offset storage unit, then passes through offset storage unit described in offset address recording unit records Offset units address；If the read requests received hit the offset units address, unit determination is corrected by reading Reading result to the offset storage unit is setting value.
- 6. according to the method for claim 5, it is characterised in that according to reading result and check results, When determining unit voltage is higher than setting threshold value, determine that memory cell includes for offset storage unit：If the cell voltage is more than verification reference voltage, and less than reading reference voltage, it is determined that it is described Memory cell is offset storage unit；If the cell voltage is less than verification reference voltage and reads reference voltage, it is determined that the storage is single Member is erasing memory cell；If the cell voltage is less than verification reference voltage and reads reference voltage, it is determined that the storage is single Member is memory cells.
- 7. according to the method for claim 5, it is characterised in that the setting value is " 1 ".
- 8. according to the method for claim 5, it is characterised in that the read requests that receive are specific For：The grid of memory cell, the grid for reading reference memory unit and the grid application reading for verifying memory cell Voltage.
- 9. according to the method for claim 8, it is characterised in that the read voltage size is 5V-8V.
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