CN1464400A - Memory read back device and reading method thereof - Google Patents
Memory read back device and reading method thereof Download PDFInfo
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- CN1464400A CN1464400A CN 02122626 CN02122626A CN1464400A CN 1464400 A CN1464400 A CN 1464400A CN 02122626 CN02122626 CN 02122626 CN 02122626 A CN02122626 A CN 02122626A CN 1464400 A CN1464400 A CN 1464400A
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Abstract
The invention relates to a memory device reading apparatus and reading process thereof characterized by the use of double reference voltage to read the data stored in the memory unit of the memory device. Said apparatus includes a first comparative unit, a second comparative unit and a third comparative unit wherein the first comparative unit receives the low reference voltage and the unit voltage of the memory unit to output the first value. The second comparative unit receives the high reference voltage and the unit voltage of the memory unit to output the second value. The third comparative unit receives the first value and the second value to output the data stored in the memory unit.
Description
Technical field
The present invention relates to a kind of storage reading apparatus and read method, particularly relate to the two reference voltages of a kind of utilization to read flash memory or non-volatility memorizer reading device.
Background technology
Non-volatility memorizer has does not need power supply can preserve the characteristic of data, and has the function of erasing and writing, and therefore is widely used on the various electronic products.Please refer to Fig. 1, it illustrates a storage unit (cell) synoptic diagram into non-volatility memorizer.A storage unit is in order to write down the data of a byte.Storage unit comprises control grid (Control Gate) CG, floating grid (Floating Gate) FG, source S and drain D.The data of storage unit be with the quantity of electric charge stored among the floating grid FG what and decide: in floating grid FG the storage a large amount electronics, need control high-tension threshold voltage of grid CG this moment, for example be greater than 5 volts, just can make the source S and the drain D conducting of this storage unit, General Definition data at this moment are 0; The electronics of the low amount of storage in floating grid FG, only need control the threshold voltage of a low-voltage of grid CG this moment, for example is less than 3.2 volts, can make the source S and the drain D conducting of this storage unit, and General Definition data at this moment are 1.
When desiring data stored in the reading cells, need to judge the size of current of the storage unit of flowing through.The flow through electric current of storage unit of low threshold voltage of the current ratio of storage unit of high threshold voltage of flowing through is little, judges that therefore the size of current of the storage unit of flowing through can be learnt the data that storage unit is stored.Fig. 2 is traditional in order to read non-volatility memorizer reading device circuit diagram.Read circuit and comprise sensing amplifier SA (sense amplifier), reference unit Ref (reference cell), capacitor C 1 and capacitor C 2, in order to the data of reading cells M.Reference unit Ref is in order to the reference current Iref of a fixed value to be provided.Reference current Iref flows through capacitor C 2 so that a reference voltage Vref to be provided.Capacitor C 1 is that the current conversion with the storage unit M that flows through is cell voltage Vcell.Sensing amplifier SA receives reference voltage Vref and cell voltage Vcell and compares back output signal D.If storage unit M stores 0, that is to say to have high threshold voltage, then cell voltage Vcell is less than reference voltage Vref, makes that the signal D of output is 0.Therefore signal D is the stored data of storage unit M.If storage unit M stores 1, that is to say to have low threshold voltage, then cell voltage Vcell is greater than reference voltage Vr, makes that the signal D of output is 1.
Please refer to Fig. 3, it is the synoptic diagram of the cell voltage Vcell_l of the cell voltage Vcell_h of reference voltage Vref, tool high threshold voltage and tool low threshold voltage.The electric current of the unit of low threshold voltage is bigger owing to flow through, so its cell voltage Vcell_l is also bigger.The gap of reference voltage Vref and cell voltage Vcell needs greater than certain degree, for example is Δ V1 or Δ V2, just can make sensing amplifier SA right judgement.By knowing the degree that just its gap can correctly be judged greatly to sensing amplifier among the figure, therefore cause reading speed too slow up to time t0.
Summary of the invention
Purpose of the present invention is exactly that a kind of storage reading apparatus that can accelerate reading speed is being provided.
According to the object of the invention, the present invention proposes a kind of storage reading apparatus, in order to read the stored data of a storage unit in the storer.Storage unit is according to stored data output unit electric current.Reading device comprises first comparer, second comparer and the 3rd comparer.First comparer is in order to receive low reference voltage and also to export first value according to this corresponding to the cell voltage of cell current.Second comparer is in order to receive high reference voltage and cell voltage and to export second value according to this.The 3rd comparer is in order to receive first value and second value and to judge according to this and export the stored data of storage unit.
Specifically, the present invention discloses a kind of storage reading apparatus, and in order to read the stored data of a storage unit in the storer, this storage unit is to export a cell current according to stored data, and this reading device comprises:
One first reference unit has a high threshold voltage, in order to a low reference current to be provided;
One second reference unit has a low threshold voltage, in order to a high reference current to be provided;
One first load is in order to receive this high reference current and to export one first reference voltage;
One second load should be hanged down reference current and export one second reference voltage in order to be received;
One the 3rd load is in order to receive this cell current and to export a cell voltage;
One first comparer is in order to receive this first reference voltage and this cell voltage and to export one first value according to this;
One second comparer is also exported one second value according to this in order to the voltage that receives this second reference voltage and this storage unit; And
One the 3rd comparer is in order to receive this first value and this second value and to judge according to this and export the stored data of this storage unit.
Described first load, second load and the 3rd load are electric capacity or are resistance.
The present invention also discloses a kind of storage reading apparatus, and in order to read the data of the storage unit in the storer, this storage unit is to export a cell current according to stored data, and this reading device comprises:
One reference unit has a low threshold voltage, in order to a high reference current to be provided;
One first load is in order to receive this high reference current and to export a reference voltage;
One second load is in order to receive this cell current and to export a cell voltage;
One first comparer, one first input end are to receive this cell voltage, and one second input end is a ground connection, and this first comparer is exported one first value according to this;
One second comparer is in order to receive this reference voltage and this cell voltage and to export one second value according to this; And
One the 3rd comparer is in order to receive this first value and this second value and to judge according to this and export the stored data of this storage unit.
Described first load, second load and the 3rd load are electric capacity or are resistance.
The present invention also discloses a kind of storage reading apparatus, and in order to read the data of the storage unit in the storer, this storage unit is to export a cell current according to stored data, and this reading device comprises:
One first comparer is a cell voltage that receives corresponding to this cell current, and a low reference voltage, and this first comparer is also exported one first value according to this;
One second comparer is in order to receive a high reference voltage and this cell voltage and to export one second value according to this; And
One the 3rd comparer is in order to receive this first value and this second value and to judge according to this and export the stored data of this storage unit.
Described device also comprises a load, in order to receive this cell current and to export this cell voltage.
Described device also comprises:
One reference unit, this reference unit are that high threshold voltage is to export a low reference current; And
One load, in order to receive should low reference current and output should low reference voltage.
Described load is electric capacity or is resistance.
Described device also comprises:
One reference unit, this reference unit are that low threshold voltage is to export a high reference current; And
One load is in order to receive this high reference current and to export this high reference voltage.
Described load is electric capacity or is resistance.
The present invention also discloses a kind of memory reading method, and in order to read the data of the storage unit in the storer, this storage unit is to export a cell current according to stored data, and this method comprises:
Reception is corresponding to a cell voltage of this cell current;
Receive a low reference voltage;
Relatively this cell voltage reaches and should also export one first value according to this by low reference voltage;
Receive a high reference voltage;
Relatively this cell voltage and this high reference voltage are also exported one second value according to this; And
Relatively this first value and this second value and judge according to this and export the stored data of this storage unit.
Described low reference voltage is to be produced by one first reference unit, and this high reference voltage is produced by one second reference unit.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, hereinafter hold and lift a preferred embodiment, and conjunction with figs., be described in detail below.
Description of drawings
Fig. 1 is a storage unit (cell) synoptic diagram of non-volatility memorizer;
Fig. 2 is traditional in order to read non-volatility memorizer reading device circuit diagram;
Fig. 3 is the synoptic diagram of the cell voltage of the cell voltage of reference voltage, tool high threshold voltage and tool low threshold voltage;
Fig. 4 is the synoptic diagram according to a kind of storage reading apparatus of a preferred embodiment of the present invention;
Fig. 5 A is sensing value SA1 when reading the storage unit of high threshold voltage and the synoptic diagram of SA2;
Fig. 5 B is sensing value SA1 when reading the storage unit of low threshold voltage and the synoptic diagram of SA2;
Behind the threshold voltage of Fig. 6 for reduction reference unit Ref_2, sensing value SA1 the during storage unit of sensing low threshold voltage and the signal net of SA2;
Fig. 7 is for being the storage reading apparatus synoptic diagram of negative ground with resistance;
Fig. 8 is another synoptic diagram of storage reading apparatus.
Embodiment
Please refer to Fig. 4, it is the synoptic diagram according to a kind of storage reading apparatus of a preferred embodiment of the present invention.Storage reading apparatus is in order to read the stored data of a storage unit in the non-volatility memorizer.Reading device comprises reference unit Ref_1, Ref_2, load L1, L2, L3, comparator C P1, CP2 and CP3.Reference unit Ref_1 is a high threshold voltage, in order to low reference current Ir1 to be provided.Reference unit Ref_2 is a low threshold voltage, in order to provide high with reference to electric current I r2.Load L1 is in order to receive the low reference voltage Vr1 of low reference current Ir1 and output.Load L2 is high with reference to electric current I r2 and export high reference voltage Vd in order to receive.Load L3 is in order to reception flow through cell current Icell and the output unit voltage Vcell according to this of storage unit M.Comparator C P1 is in order to receive reference voltage Vr1 and cell voltage Vcell, and relatively sensing value SA1 is exported in the back.Comparator C P2 is in order to receive reference voltage Vr2 and cell voltage Vcell, and relatively sensing value SA2 is exported in the back.Comparator C P3 is in order to receive sensing value SA1 and also judge according to this with SA2 and to export the stored data D of this storage unit M.
In the present embodiment, load L1, L2 and L3 are electric capacity, so the variation of its sensing value is shown in Fig. 5 A and Fig. 5 B.Fig. 5 A illustrates sensing value SA1 when reading the storage unit of high threshold voltage and the synoptic diagram of SA2.The electric current I cell of the storage unit of high threshold voltage is a low level owing to flow through, so cell voltage Vcell also is a low level.So the gap of cell voltage Vcell and low reference voltage Vr1 is little, and the gap of cell voltage Vcell and high reference voltage Vr2 is just bigger.The value of sensing value SA1 and SA2 is respectively:
SA1＝Av*(Vcell-Vr1)；
SA2＝Av*(Vr2-Vcell)；
Wherein, Av is the gain amplifier value of comparator C P1 and CP2.So when the storage unit of sensing high threshold voltage, sensing value SA1 is less than sensing value SA2.Owing to be the data of interpretation cell stores according to the difference of sensing value SA1 and SA2, the difference of sensing value SA1 and SA2 is big compared with the result that reading device produced of traditional single reference unit.By the difference that can obtain Δ V1 among the figure as can be known at time t ', reading speed is added determine.
Fig. 5 B is sensing value SA1 when reading the storage unit of low threshold voltage and the synoptic diagram of SA2.The electric current I cell of the storage unit of low threshold voltage is a high level owing to flow through, so cell voltage Vcell also is a high level.So the gap of cell voltage Vcell and low reference voltage Vr1 is bigger, and the gap of cell voltage Vcell and high reference voltage Vr1 is just smaller.So sensing value SA2 is less than sensing value SA1.Owing to be the data of interpretation cell stores according to the difference of sensing value SA1 and SA2, the difference of sensing value SA1 and SA2 is big compared with the result that reading device produced of traditional single reference unit.By among the figure as can be known at time t " can obtain the difference of Δ V2, reading speed is accelerated.
Via the threshold voltage of suitable adjustment reference unit Ref_2, can when the storage unit of sensing low threshold voltage, strengthen the gap of sensing value SA1 and SA2.After Fig. 6 illustrates and is the threshold voltage that reduces reference unit Ref_2, sensing value SA1 the during storage unit of sensing low threshold voltage and the synoptic diagram of SA2.The threshold voltage that reduces reference unit Ref_2 makes that sensing value SA2 is a negative value, so can strengthen the gap of sensing value SA2 and SA1 when the storage unit of sensing low threshold voltage, with the speed of accelerating to read.
Load in the present embodiment can also be made of resistance.Please refer to Fig. 7, it illustrates the storage reading apparatus synoptic diagram for resistance being load.Wherein, identical among the electric current I cell, the mode that Ir1 and Ir2 produce and Fig. 5, produced by storage unit M, reference unit Ref_1 and Ref_2 respectively.The place different with the load among Fig. 5 is that load is resistance R 1, R2 and R3, and couples with power vd D.And its principle of operation is identical.
Please refer to Fig. 8, it is another practice of storage reading apparatus.With different among Fig. 7 be, produce reference voltage Vr1, save resistance R 1 and reference unit Ref_1, and reach identical effect in the mode of ground connection.
The disclosed storage reading apparatus of the above embodiment of the present invention adopts two reference voltages with the stored data of interpretation storage unit, the speed that can accelerate to read and degree of stability.
In sum, though the present invention with a preferred embodiment openly as above, so it is not in order to limit the present invention; any those of ordinary skills; without departing from the spirit and scope of the present invention, change when doing various equivalences, so protection scope of the present invention is Huaihe River with the claim.
Claims (18)
1. storage reading apparatus, in order to read the stored data of a storage unit in the storer, this storage unit is to export a cell current according to stored data, it is characterized in that this reading device comprises:
One first reference unit has a high threshold voltage, in order to a low reference current to be provided;
One second reference unit has a low threshold voltage, in order to a high reference current to be provided;
One first load is in order to receive this high reference current and to export one first reference voltage;
One second load should be hanged down reference current and export one second reference voltage in order to be received;
One the 3rd load is in order to receive this cell current and to export a cell voltage;
One first comparer is in order to receive this first reference voltage and this cell voltage and to export one first value according to this;
One second comparer is also exported one second value according to this in order to the voltage that receives this second reference voltage and this storage unit; And
One the 3rd comparer is in order to receive this first value and this second value and to judge according to this and export the stored data of this storage unit.
2. storage reading apparatus as claimed in claim 1 is characterized in that described first load, second load and the 3rd load are electric capacity.
3. storage reading apparatus as claimed in claim 1 is characterized in that described first load, second load and the 3rd load are resistance.
4. storage reading apparatus, in order to read the data of the storage unit in the storer, this storage unit is to export a cell current according to stored data, it is characterized in that this reading device comprises:
One reference unit has a low threshold voltage, in order to a high reference current to be provided;
One first load is in order to receive this high reference current and to export a reference voltage;
One second load is in order to receive this cell current and to export a cell voltage;
One first comparer, one first input end are to receive this cell voltage, and one second input end is a ground connection, and this first comparer is exported one first value according to this;
One second comparer is in order to receive this reference voltage and this cell voltage and to export one second value according to this; And
One the 3rd comparer is in order to receive this first value and this second value and to judge according to this and export the stored data of this storage unit.
5. storage reading apparatus as claimed in claim 4 is characterized in that described first load, second load and the 3rd load are electric capacity.
6. storage reading apparatus as claimed in claim 4 is characterized in that described first load, second load and the 3rd load are resistance.
7. storage reading apparatus, in order to read the data of the storage unit in the storer, this storage unit is to export a cell current according to stored data, it is characterized in that this reading device comprises:
One first comparer is a cell voltage that receives corresponding to this cell current, and a low reference voltage, and this first comparer is also exported one first value according to this;
One second comparer is in order to receive a high reference voltage and this cell voltage and to export one second value according to this; And
One the 3rd comparer is in order to receive this first value and this second value and to judge according to this and export the stored data of this storage unit.
8. storage reading apparatus as claimed in claim 7 is characterized in that described device also comprises a load, in order to receive this cell current and to export this cell voltage.
9. storage reading apparatus as claimed in claim 8 is characterized in that described load is an electric capacity.
10. storage reading apparatus as claimed in claim 8 is characterized in that described load is a resistance.
11. storage reading apparatus as claimed in claim 7 is characterized in that described device also comprises:
One reference unit, this reference unit are that high threshold voltage is to export a low reference current; And
One load, in order to receive should low reference current and output should low reference voltage.
12. storage reading apparatus as claimed in claim 11 is characterized in that described load is an electric capacity.
13. storage reading apparatus as claimed in claim 11 is characterized in that described load is a resistance.
14. storage reading apparatus as claimed in claim 11 is characterized in that described device also comprises:
One reference unit, this reference unit are that low threshold voltage is to export a high reference current; And
One load is in order to receive this high reference current and to export this high reference voltage.
15. storage reading apparatus as claimed in claim 14 is characterized in that described load is an electric capacity.
16. storage reading apparatus as claimed in claim 14 is characterized in that described load is a resistance.
17. a memory reading method, in order to read the data of the storage unit in the storer, this storage unit is to export a cell current according to stored data, it is characterized in that this method comprises:
Reception is corresponding to a cell voltage of this cell current;
Receive a low reference voltage;
Relatively this cell voltage reaches and should also export one first value according to this by low reference voltage;
Receive a high reference voltage;
Relatively this cell voltage and this high reference voltage are also exported one second value according to this; And
Relatively this first value and this second value and judge according to this and export the stored data of this storage unit.
18. memory reading method as claimed in claim 17 is characterized in that described low reference voltage is to be produced by one first reference unit, this high reference voltage is produced by one second reference unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021226261A CN1321375C (en) | 2002-06-18 | 2002-06-18 | Memory read back device and reading method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021226261A CN1321375C (en) | 2002-06-18 | 2002-06-18 | Memory read back device and reading method thereof |
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| Publication Number | Publication Date |
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| CN1464400A true CN1464400A (en) | 2003-12-31 |
| CN1321375C CN1321375C (en) | 2007-06-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB021226261A Expired - Lifetime CN1321375C (en) | 2002-06-18 | 2002-06-18 | Memory read back device and reading method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102955488A (en) * | 2011-08-26 | 2013-03-06 | 华润矽威科技（上海）有限公司 | Current source with mode recognition function |
| CN103208304A (en) * | 2012-01-13 | 2013-07-17 | 北京兆易创新科技股份有限公司 | Current comparator circuit of reading circuit |
| CN106024063A (en) * | 2016-07-19 | 2016-10-12 | 北京兆易创新科技股份有限公司 | Data reading device and method of nonvolatile memory |
| CN106024062A (en) * | 2016-07-19 | 2016-10-12 | 北京兆易创新科技股份有限公司 | Data reading device and method of nonvolatile memory |
| CN107633865A (en) * | 2016-07-19 | 2018-01-26 | 北京兆易创新科技股份有限公司 | A kind of digital independent device and method of nonvolatile memory |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3205658B2 (en) * | 1993-12-28 | 2001-09-04 | 新日本製鐵株式会社 | Reading method of semiconductor memory device |
-
2002
- 2002-06-18 CN CNB021226261A patent/CN1321375C/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102955488A (en) * | 2011-08-26 | 2013-03-06 | 华润矽威科技（上海）有限公司 | Current source with mode recognition function |
| CN102955488B (en) * | 2011-08-26 | 2015-07-22 | 华润矽威科技（上海）有限公司 | Current source with mode recognition function |
| CN103208304A (en) * | 2012-01-13 | 2013-07-17 | 北京兆易创新科技股份有限公司 | Current comparator circuit of reading circuit |
| CN103208304B (en) * | 2012-01-13 | 2016-01-06 | 北京兆易创新科技股份有限公司 | A kind of current comparison circuit of reading circuit |
| CN106024063A (en) * | 2016-07-19 | 2016-10-12 | 北京兆易创新科技股份有限公司 | Data reading device and method of nonvolatile memory |
| CN106024062A (en) * | 2016-07-19 | 2016-10-12 | 北京兆易创新科技股份有限公司 | Data reading device and method of nonvolatile memory |
| CN107633865A (en) * | 2016-07-19 | 2018-01-26 | 北京兆易创新科技股份有限公司 | A kind of digital independent device and method of nonvolatile memory |
| CN106024062B (en) * | 2016-07-19 | 2023-12-05 | 兆易创新科技集团股份有限公司 | Data reading device and method of nonvolatile memory |
| CN107633865B (en) * | 2016-07-19 | 2024-02-20 | 兆易创新科技集团股份有限公司 | Data reading device and method of nonvolatile memory |
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| CN1321375C (en) | 2007-06-13 |
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Granted publication date: 20070613 |