CN107622936A - Method for solar silicon wafers cleaning - Google Patents
Method for solar silicon wafers cleaning Download PDFInfo
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- CN107622936A CN107622936A CN201710729747.4A CN201710729747A CN107622936A CN 107622936 A CN107622936 A CN 107622936A CN 201710729747 A CN201710729747 A CN 201710729747A CN 107622936 A CN107622936 A CN 107622936A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of method for solar silicon wafers cleaning, before making herbs into wool, diffusion and etching procedure, comprise the following steps：S1：By silicon chip in cleaning fluid prerinse 4 12 minutes at a temperature of 75 85 DEG C；Then temperature is down to 45 55 DEG C, opens ultrasonic wave and cleans 5 18 minutes；The cleaning fluid contains hydrochloric acid, hydrogen peroxide, catalyst and deionized water；S2：Silicon chip after cleaning is placed into fill in deionized water and washed at a temperature of 75 85 DEG C 5 10 minutes, is rinsed three time；S3：By the silicon chip Quick-air-drying after rinsing.This method can make silicon chip surface carry out complicated physical and chemical reaction, such as complexing, saponification effect, effectively removes during solar silicon wafers cutting on line that caused organic matter is dirty, dust and the cleaning rates such as other particle contaminations and metal ion are dirty are up to more than 93%.
Description
Technical field
The invention belongs to field of photovoltaic technology, and in particular to a kind of method for solar silicon wafers cleaning.
Background technology
Wafer Cleaning refers to before the processes such as making herbs into wool, diffusion, etching, and silicon chip table is removed using the method for physics or chemistry
The pollution in face is dirty and autoxidation thing, to obtain meeting the process that cleannes will try to achieve silicon chip surface.In photovoltaic solar industry
In, silicon chip can produce silicon material flaw-piece, liftout, sheet stock, pot bottom material and primary polycrystal material, it is necessary to which cleaning equipment enters in finished surface
Row surface clean, and ultrasonic wave sun cleaning machine can effectively remove organic matter, particle, metal impurities, the natural oxygen in silicon chip face
Change the pollutant of the annex vessel such as layer and quartz, plastics and do not destroy wafer surface characteristics, in silicon chip production and processing to extensively
Using.
Photovoltaic cell silicon wafer cleaning technique mainly have following a few classes early stage it is conventional be RCA ablutions, but because RCA is clear
The reagent cost height used is washed, silicon chip surface is coarse after cleaning, and environment and human body are all necessarily endangered, and is not suitable for photovoltaic cell
Wafer Cleaning.
The content of the invention
The present invention is for problem present in background technology, it is proposed that a kind of method for solar silicon wafers cleaning, uses
Before making herbs into wool, diffusion and etching procedure, comprise the following steps：
S1：By silicon chip in cleaning fluid the prerinse 4-12 minutes at a temperature of 75-85 DEG C；Then temperature is down to 45-55
DEG C, open ultrasonic wave cleaning 5-18 minutes；
The cleaning fluid contains hydrochloric acid, hydrogen peroxide, catalyst and deionized water, wherein：The parts by weight of hydrochloric acid are 1-2,
The parts by weight of hydrogen peroxide are 1-3, and the parts by weight of catalyst are 1-3, and the parts by weight of deionized water are 5；
The frequency of the ultrasonic wave cleaning is 5-20KHz；
S2：Silicon chip after cleaning is placed into fill and washed in deionized water at a temperature of 75-85 DEG C 5-10 minutes, is rinsed
Three time；
S3：By the silicon chip Quick-air-drying after rinsing.
As the first preferred embodiment, the parts by weight of the hydrochloric acid are 1, and the parts by weight of hydrogen peroxide are 1, are urged
The parts by weight of agent are 1, and the parts by weight of deionized water are 5, and the frequency of ultrasonic wave cleaning is 5KHz.
As second of preferred embodiment, the parts by weight of the hydrochloric acid are 1, and the parts by weight of hydrogen peroxide are 2, are urged
The parts by weight of agent are 1, and the parts by weight of deionized water are 5, and the frequency of ultrasonic wave cleaning is 10KHz.
As the third preferred embodiment, the parts by weight of the hydrochloric acid are 2, and the parts by weight of hydrogen peroxide are 2, are urged
The parts by weight of agent are 2, and the parts by weight of deionized water are 5, and the frequency of ultrasonic wave cleaning is 15KHz.
As the 4th kind of preferred embodiment, the parts by weight of the hydrochloric acid are 2, and the parts by weight of hydrogen peroxide are 3, are urged
The parts by weight of agent are 3, and the parts by weight of deionized water are 5, and the frequency of ultrasonic wave cleaning is 20KHz.
Preferably, the catalyst is TMAH.
Preferably, the mass fraction of the hydrochloric acid is 20%.
Preferably, the mass fraction number of the hydrogen peroxide is 30%.
Beneficial effects of the present invention
This method can make silicon chip surface carry out complicated physical and chemical reaction, such as complexing, saponification effect, effectively remove
Caused organic matter is dirty during solar silicon wafers cutting on line, dust and that other particle contaminations and metal ion are dirty etc. is clear
The rate of washing is up to more than 93%.
Embodiment
With reference to embodiment, the invention will be further described, but protection scope of the present invention not limited to this：
Embodiment 1：
A kind of method for solar silicon wafers cleaning, before making herbs into wool, diffusion and etching procedure, comprise the following steps：
S1：By silicon chip in cleaning fluid prerinse 4 minutes at a temperature of 75 DEG C；Then temperature is down to 45 DEG C, opens super
Sound wave cleans 5 minutes；
The cleaning fluid contains hydrochloric acid, hydrogen peroxide, catalyst and deionized water, wherein：The parts by weight of hydrochloric acid are 1, double
The parts by weight of oxygen water are 1, and the parts by weight of catalyst are 1, and the parts by weight of deionized water are 5；The mass fraction of hydrochloric acid is
20%, the mass fraction of hydrogen peroxide is 30%；
The frequency of the ultrasonic wave cleaning is 5KHz；
The catalyst is TMAH；
S2：Silicon chip after cleaning is placed into fill in deionized water and washed at a temperature of 75 DEG C 5 minutes, is rinsed three time；
S3：By the silicon chip Quick-air-drying after rinsing.
In the present embodiment, effectively remove during solar silicon wafers cutting on line that caused organic matter is dirty, dust and other
The cleaning rates such as particle contamination and metal ion are dirty are up to 93%.
Embodiment 2：
A kind of method for solar silicon wafers cleaning, before making herbs into wool, diffusion and etching procedure, comprise the following steps：
S1：By silicon chip in cleaning fluid prerinse 12 minutes at a temperature of 85 DEG C；Then temperature is down to 55 DEG C, opens super
Sound wave cleans 18 minutes；
The cleaning fluid contains hydrochloric acid, hydrogen peroxide, catalyst and deionized water, wherein：The parts by weight of hydrochloric acid are 1, double
The parts by weight of oxygen water are 2, and the parts by weight of catalyst are 1, and the parts by weight of deionized water are 5；The mass fraction of hydrochloric acid is
20%, the mass fraction of hydrogen peroxide is 30%；
The frequency of the ultrasonic wave cleaning is 10KHz；
The catalyst is TMAH；
S2：Silicon chip after cleaning is placed into fill in deionized water and washed at a temperature of 85 DEG C 10 minutes, is rinsed three time；
S3：By the silicon chip Quick-air-drying after rinsing.
In the present embodiment, effectively remove during solar silicon wafers cutting on line that caused organic matter is dirty, dust and other
The cleaning rates such as particle contamination and metal ion are dirty are up to 95%.
Embodiment 3：
A kind of method for solar silicon wafers cleaning, before making herbs into wool, diffusion and etching procedure, comprise the following steps：
S1：By silicon chip in cleaning fluid prerinse 8 minutes at a temperature of 80 DEG C；Then temperature is down to 50 DEG C, opens super
Sound wave cleans 11 minutes；
The cleaning fluid contains hydrochloric acid, hydrogen peroxide, catalyst and deionized water, wherein：The parts by weight of hydrochloric acid are 2, double
The parts by weight of oxygen water are 2, and the parts by weight of catalyst are 2, and the parts by weight of deionized water are 5；The mass fraction of hydrochloric acid is
20%, the mass fraction of hydrogen peroxide is 30%；
The frequency of the ultrasonic wave cleaning is 15KHz；
The catalyst is TMAH；
S2：Silicon chip after cleaning is placed into fill in deionized water and washed at a temperature of 80 DEG C 8 minutes, is rinsed three time；
S3：By the silicon chip Quick-air-drying after rinsing.
In the present embodiment, effectively remove during solar silicon wafers cutting on line that caused organic matter is dirty, dust and other
The cleaning rates such as particle contamination and metal ion are dirty are up to 98%
Embodiment 4：
A kind of method for solar silicon wafers cleaning, before making herbs into wool, diffusion and etching procedure, comprise the following steps：
S1：By silicon chip in cleaning fluid prerinse 8 minutes at a temperature of 80 DEG C；Then temperature is down to 50 DEG C, opens super
Sound wave cleans 11 minutes；
The cleaning fluid contains hydrochloric acid, hydrogen peroxide, catalyst and deionized water, wherein：The parts by weight of hydrochloric acid are 2, double
The parts by weight of oxygen water are 3, and the parts by weight of catalyst are 3, and the parts by weight of deionized water are 5；The mass fraction of hydrochloric acid is
20%, the mass fraction of hydrogen peroxide is 30%；
The frequency of the ultrasonic wave cleaning is 20KHz；
The catalyst is TMAH；
S2：Silicon chip after cleaning is placed into fill in deionized water and washed at a temperature of 80 DEG C 8 minutes, is rinsed three time；
S3：By the silicon chip Quick-air-drying after rinsing.
In the present embodiment, effectively remove during solar silicon wafers cutting on line that caused organic matter is dirty, dust and other
The cleaning rates such as particle contamination and metal ion are dirty are up to 99%.
Specific embodiment described herein is only that spirit of the present invention is illustrated.Technology belonging to the present invention is led
The technical staff in domain can be made various modifications or supplement to described specific embodiment or be replaced using similar mode
Generation, but without departing from the spiritual of the present invention or surmount scope defined in appended claims.
Claims (8)
1. it is a kind of for solar silicon wafers cleaning method, before making herbs into wool, diffusion and etching procedure, it is characterised in that including with
Lower step：
S1：By silicon chip in cleaning fluid the prerinse 4-12 minutes at a temperature of 75-85 DEG C；Then temperature is down to 45-55 DEG C, opens
Open ultrasonic wave cleaning 5-18 minutes；
The cleaning fluid contains hydrochloric acid, hydrogen peroxide, catalyst and deionized water, wherein：The parts by weight of hydrochloric acid are 1-2, dioxygen
The parts by weight of water are 1-3, and the parts by weight of catalyst are 1-3, and the parts by weight of deionized water are 5；
The frequency of the ultrasonic wave cleaning is 5-20KHz；
S2：Silicon chip after cleaning is placed into fill and washed in deionized water at a temperature of 75-85 DEG C 5-10 minutes, rinsing three
Time；
S3：By the silicon chip Quick-air-drying after rinsing.
2. according to the method for claim 1, it is characterised in that the parts by weight of the hydrochloric acid are 1, the parts by weight of hydrogen peroxide
Number is 1, and the parts by weight of catalyst are 1, and the parts by weight of deionized water are 5, and the frequency of ultrasonic wave cleaning is 5KHz.
3. according to the method for claim 1, it is characterised in that the parts by weight of the hydrochloric acid are 1, the parts by weight of hydrogen peroxide
Number is 2, and the parts by weight of catalyst are 1, and the parts by weight of deionized water are 5, and the frequency of ultrasonic wave cleaning is 10KHz.
4. according to the method for claim 1, it is characterised in that the parts by weight of the hydrochloric acid are 2, the parts by weight of hydrogen peroxide
Number is 2, and the parts by weight of catalyst are 2, and the parts by weight of deionized water are 5, and the frequency of ultrasonic wave cleaning is 15KHz.
5. according to the method for claim 1, it is characterised in that the parts by weight of the hydrochloric acid are 2, the parts by weight of hydrogen peroxide
Number is 3, and the parts by weight of catalyst are 3, and the parts by weight of deionized water are 5, and the frequency of ultrasonic wave cleaning is 20KHz.
6. according to the method described in claim any one of 1-5, it is characterised in that the catalyst is TMAH.
7. according to the method described in claim any one of 1-5, it is characterised in that the mass fraction of the hydrochloric acid is 20%.
8. according to the method described in claim any one of 1-5, it is characterised in that the mass fraction number of the hydrogen peroxide is 30%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710729747.4A CN107622936A (en) | 2017-08-23 | 2017-08-23 | Method for solar silicon wafers cleaning |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710729747.4A CN107622936A (en) | 2017-08-23 | 2017-08-23 | Method for solar silicon wafers cleaning |
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| CN107622936A true CN107622936A (en) | 2018-01-23 |
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| CN201710729747.4A Pending CN107622936A (en) | 2017-08-23 | 2017-08-23 | Method for solar silicon wafers cleaning |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111659665A (en) * | 2020-05-29 | 2020-09-15 | 徐州鑫晶半导体科技有限公司 | Silicon wafer cleaning method and silicon wafer cleaning equipment |
Citations (8)
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|---|---|---|---|---|
| CN1226998A (en) * | 1996-08-02 | 1999-08-25 | 西门子公司 | Aqueous cleaning solution for semiconductor substrates |
| CN1424745A (en) * | 2003-01-02 | 2003-06-18 | 上海华虹（集团）有限公司 | Single-step clean method for diffuse and oxidation process |
| US20050051082A1 (en) * | 1999-05-01 | 2005-03-10 | Micron Technology, Inc. | Methods of forming hemisperical grained silicon on a template on a semiconductor work object |
| US20060042651A1 (en) * | 2004-08-30 | 2006-03-02 | Applied Materials, Inc. | Cleaning submicron structures on a semiconductor wafer surface |
| CN103343060A (en) * | 2013-07-17 | 2013-10-09 | 常熟奥首光电材料有限公司 | Sapphire substrate wafer cleaning solution as well as preparation method, application and cleaning method thereof |
| CN104299890A (en) * | 2014-10-09 | 2015-01-21 | 浙江大学 | Method for cleaning ferrotungsten metal ions on surface of silicon wafer |
| CN104813438A (en) * | 2012-11-28 | 2015-07-29 | 盛美半导体设备（上海）有限公司 | Method and apparatus for cleaning semiconductor wafer |
| CN107039244A (en) * | 2017-04-14 | 2017-08-11 | 广东先导先进材料股份有限公司 | The handling process of semiconductor wafer |
-
2017
- 2017-08-23 CN CN201710729747.4A patent/CN107622936A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1226998A (en) * | 1996-08-02 | 1999-08-25 | 西门子公司 | Aqueous cleaning solution for semiconductor substrates |
| US20050051082A1 (en) * | 1999-05-01 | 2005-03-10 | Micron Technology, Inc. | Methods of forming hemisperical grained silicon on a template on a semiconductor work object |
| CN1424745A (en) * | 2003-01-02 | 2003-06-18 | 上海华虹（集团）有限公司 | Single-step clean method for diffuse and oxidation process |
| US20060042651A1 (en) * | 2004-08-30 | 2006-03-02 | Applied Materials, Inc. | Cleaning submicron structures on a semiconductor wafer surface |
| CN104813438A (en) * | 2012-11-28 | 2015-07-29 | 盛美半导体设备（上海）有限公司 | Method and apparatus for cleaning semiconductor wafer |
| CN103343060A (en) * | 2013-07-17 | 2013-10-09 | 常熟奥首光电材料有限公司 | Sapphire substrate wafer cleaning solution as well as preparation method, application and cleaning method thereof |
| CN104299890A (en) * | 2014-10-09 | 2015-01-21 | 浙江大学 | Method for cleaning ferrotungsten metal ions on surface of silicon wafer |
| CN107039244A (en) * | 2017-04-14 | 2017-08-11 | 广东先导先进材料股份有限公司 | The handling process of semiconductor wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111659665A (en) * | 2020-05-29 | 2020-09-15 | 徐州鑫晶半导体科技有限公司 | Silicon wafer cleaning method and silicon wafer cleaning equipment |
| CN111659665B (en) * | 2020-05-29 | 2022-02-01 | 徐州鑫晶半导体科技有限公司 | Silicon wafer cleaning method and silicon wafer cleaning equipment |
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