CN107611776A - A kind of gain coupling distributed feedback semiconductor laser and preparation method thereof - Google Patents
A kind of gain coupling distributed feedback semiconductor laser and preparation method thereof Download PDFInfo
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- CN107611776A CN107611776A CN201710951488.XA CN201710951488A CN107611776A CN 107611776 A CN107611776 A CN 107611776A CN 201710951488 A CN201710951488 A CN 201710951488A CN 107611776 A CN107611776 A CN 107611776A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
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Abstract
The application provides a kind of gain coupling distributed feedback semiconductor laser and preparation method thereof, the preparation method to P faces carrier concentration profile by carrying out periodicity regulation and control, for example manufacturing cycle conductive region is injected by carrier, or periodically remove by the means such as etching, aoxidizing the part-structure of script high connductivity layer and form periodicity conductive region；Because carrier concentration control mode will not cause to damage to fiber waveguide, so as to avoid the property for introducing the fiber waveguides such as stress, oxidation from changing.And, controlled using carrier concentration, high concentration carrier is formed in specific region, there is no carrier injection in unwanted region, the loss that carrier introduces so for whole piece fiber waveguide falls below minimum, when especially having rear end integrated equipment, low-loss can ensure that the energy of laser is efficiently injected into the integrated equipment of rear end along fiber waveguide, improve energy utilization efficiency.
Description
Technical field
The present invention relates to semiconductor laser manufacture technology field, more particularly to a kind of gain coupling distributed feedback semiconductor
Laser and preparation method thereof.
Background technology
Distributed feedback laser (Distributed Feedback Laser) is a kind of single longitudinal mode laser, in view of its excellent spectral characteristic,
There is wide application market in the fields such as laser communicationses, Internet of Things, internet, space communication, detection of gas, marine exploration.
Because existing commercial Distributed Feedback Laser is limited to index-coupled principle, generally there are 2 lasings with optical grating construction entirely
Peak, it is difficult to the problems such as realizing single longitudinal mode operation, it is impossible to meet the needs of many application fields.To solve the problems, such as single longitudinal mode lasing,
It can introduce periodically loss by the absorbing medium of the manufacturing cycle in the active area of Gain-coupled DFB lasers and come
Realize single longitudinal mode lasing.
Fiber waveguide is generally fabricated to by periodic structure by photoetching process in the prior art, so as to realize gain coupling point
The single longitudinal mode lasing of cloth feedback semiconductor laser, but so make the gain coupling distributed feedback semiconductor laser formed
It is power, less efficient, and spectral line width is wider.
The content of the invention
In view of this, the present invention provides a kind of gain coupling distributed feedback semiconductor laser and preparation method thereof, with solution
Certainly in the prior art there is power, less efficient in gain coupling distributed feedback semiconductor laser, and deteriorate asking for spectral line width
Topic.
To achieve the above object, the present invention provides following technical scheme：
A kind of gain couples distributed feedback semiconductor laser preparation method, including：
Substrate is provided；
N faces ducting layer, active layer, P faces ducting layer are sequentially formed over the substrate, and P faces ducting layer has projection
Structure, the bulge-structure form fiber waveguide；
Using carrier concentration control mode P faces ducting layer bearing of trend of the bulge-structure along the fiber waveguide
Form periodicity conductive region；
Prepare p side electrode and N faces electrode.
Preferably, it is described using carrier concentration control mode P faces ducting layer bulge-structure along the light wave
The bearing of trend led forms periodicity conductive region, specifically includes：
Barrier layer is made on the ducting layer of the P faces；
The barrier layer is patterned, the barrier layer opening corresponds to the position of the periodicity conductive region to be formed；
Using ion implanting or carrier diffusion mode, carrier control is carried out to P faces ducting layer, described in formation
Periodicity conductive region.
The present invention also provides a kind of gain coupling distributed feedback semiconductor laser, using preparation method system recited above
Formed, the gain coupling distributed feedback laser includes：
Substrate, the substrate include the first surface and second surface being oppositely arranged；
On the substrate first surface along away from the substrate surface direction set gradually N faces ducting layer, have
Active layer, P faces ducting layer, wherein, P faces ducting layer has bulge-structure, and the bulge-structure forms fiber waveguide；The projection
Structure, which has, controls the periodicity conductive region to be formed by carrier；
P side electrode on the bulge-structure；
Positioned at the N faces electrode of the substrate second surface.
Preferably, the periodicity conductive region includes multiple periodic units, and each periodic unit is led including one
Electric region.
Preferably, the periodicity conductive region includes multiple periodic units, and each periodic unit includes multiple lead
Electric region.
Preferably, also there is groove, the bearing of trend of the groove and the extension of the fiber waveguide on the bulge-structure
Direction is identical, and the fiber waveguide is divided into period 1 property conductive region and Secondary periodicity conductive region by the groove；
Wherein, the cycle of the period 1 property conductive region and the Secondary periodicity conductive region differs.
The present invention also provides a kind of gain coupling distributed feedback semiconductor laser preparation method, including：
Substrate is provided；
N faces ducting layer, active layer, P faces ducting layer and highly doped cap rock are sequentially formed over the substrate, it is described highly doped
The doping concentration of cap rock is in 1*1018cm-3~1*1019cm-3The order of magnitude；
The highly doped cap rock in part and P faces ducting layer are removed, forms bulge-structure, the bulge-structure is fiber waveguide, and position
Highly doped cap rock in the bulge-structure surface forms the periodic structure along the bulge-structure bearing of trend；
Region outside the highly doped cap rock forms insulating medium layer；
Prepare p side electrode and N faces electrode.
The present invention also provides a kind of gain coupling distributed feedback semiconductor laser, using preparation method shape recited above
Into the gain coupling distributed feedback laser includes：
Substrate, the substrate include the first surface and second surface being oppositely arranged；
On the substrate first surface along away from the substrate surface direction set gradually N faces ducting layer, have
Active layer, P faces ducting layer, wherein, P faces ducting layer has bulge-structure, and the bulge-structure forms fiber waveguide；
Highly doped cap rock on the bulge-structure, the doping concentration of the highly doped cap rock is in 1*1018cm-3~
1*1019cm-3The order of magnitude, the highly doped cap rock form periodicity conductive region；
Cover the insulating medium layer of the exterior domain of the highly doped cap rock；
P side electrode on the highly doped cap rock；
Positioned at the N faces electrode of the substrate second surface.
Preferably, the p side electrode includes the first p side electrode and the second p side electrode, first p side electrode and described
The bearing of trend of second p side electrode is identical with the bearing of trend of the fiber waveguide；
Wherein, the highly doped cap rock of the first p side electrode covering forms period 1 property conductive structure, the 2nd P
The highly doped cap rock of face electrode covering forms Secondary periodicity conductive structure；
The cycle of the period 1 property conductive region and the Secondary periodicity conductive region differs.
Understood via above-mentioned technical scheme, the making of gain coupling distributed feedback semiconductor laser provided by the invention
In method, in fabrication cycle conductive region, using carrier concentration control mode, the carrier concentration controlling party
Formula includes carrier injection manufacturing cycle conductive region, or by etch, aoxidize etc. means periodically remove it is originally high
The part-structure of conductive layer forms periodicity conductive region.Because carrier concentration control mode will not cause to damage to fiber waveguide
It is bad, so as to avoid the property for introducing the fiber waveguides such as stress, oxidation from changing.Moreover, controlled using carrier concentration, in specific region
Interior formation high concentration carrier, does not have carrier injection, the carrier so for whole piece fiber waveguide in unwanted region
The loss of introducing falls below minimum, and when especially having rear end integrated equipment, low-loss can ensure the energy edge of laser
Fiber waveguide to be efficiently injected into the integrated equipment of rear end, improve energy utilization efficiency.
In addition, relative to surface grating of the prior art, because carrier concentration control has lacked a step to fiber waveguide
Etching technics, without changing etching condition because etachable material is different so that processing technology is easier, reduces production
Cost.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is the preparation method flow that a kind of gain provided in an embodiment of the present invention couples distributed feedback semiconductor laser
Figure；
Fig. 2 is that gain provided in an embodiment of the present invention couples distributed feedback semiconductor laser three dimensional structure diagram；
Fig. 3 is the BB ' sections along Fig. 2 for having made the coupling distributed feedback semiconductor laser of the gain after the ducting layer of P faces
Schematic diagram；
Fig. 4 is that gain provided in an embodiment of the present invention couples distributed feedback semiconductor laser AA ' sections signal along Fig. 2
Figure；
Fig. 5 couples distributed feedback semiconductor laser AA ' along Fig. 2 for another gain provided in an embodiment of the present invention and cut
Face schematic diagram；
Fig. 6 is the preparation method stream that another gain provided in an embodiment of the present invention couples distributed feedback semiconductor laser
Cheng Tu；
Fig. 7 is the section signal that another gain provided in an embodiment of the present invention couples distributed feedback semiconductor laser
Figure；
Fig. 8 is that another gain provided in an embodiment of the present invention couples the signal of distributed feedback semiconductor laser three-dimensional structure
Figure.
Embodiment
Just as described in the background section, gain couples the power of distributed feedback semiconductor laser, effect in the prior art
Rate is relatively low, and spectral line width is wider.
Inventor has found that it is when making distributed feedback laser in the prior art, generally to lead to the reason for above-mentioned phenomenon occur
The periodic structure that photoetching process realizes fiber waveguide is crossed, so as to introduce periodically loss to realize single longitudinal mode lasing.But by
Fiber waveguide is caused to damage in photoetching process, this damage, which is usually associated with, introduces the properties such as stress, oxidation change material properties；
The energy that can be coupled to the etching of fiber waveguide simultaneously in a part of fiber waveguide carries out diffraction, so as to the energy transmitted in fiber waveguide
Cause to be lost, reduce power, efficiency, deteriorate spectral line width.
Based on this, the present invention provides a kind of gain coupling distributed feedback laser preparation method, including：
Substrate is provided；
N faces ducting layer, active layer, P faces ducting layer are sequentially formed over the substrate, and P faces ducting layer has projection
Structure, the bulge-structure form fiber waveguide；
Using carrier concentration control mode P faces ducting layer bearing of trend of the bulge-structure along the fiber waveguide
Form periodicity conductive region；
Prepare p side electrode and N faces electrode.
It is conductive in fabrication cycle in the preparation method of gain coupling distributed feedback semiconductor laser provided by the invention
During region, using carrier concentration control mode, because carrier concentration control mode will not cause to damage to fiber waveguide,
Change so as to which the property of the fiber waveguides such as stress, oxidation will not be introduced.Moreover, controlled using carrier concentration, in specific region
High concentration carrier is formed, does not have carrier injection in unwanted region, so carrier draws for whole piece fiber waveguide
The loss entered fall below it is minimum, when especially having rear end integrated equipment, low-loss can ensure the energy of laser along
Fiber waveguide is efficiently injected into the integrated equipment of rear end, improves energy utilization efficiency.
In addition, relative to surface grating of the prior art, because carrier concentration control has lacked a step to fiber waveguide
Etching technics, without changing etching condition because etachable material is different so that processing technology is easier, reduces production
Cost.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Embodiment one
The present invention provides a kind of gain coupling distributed feedback semiconductor laser preparation method, as shown in figure 1, being the system
Make method flow schematic diagram, as shown in Fig. 2 coupling the schematic three dimensional views of distributed feedback semiconductor laser for final gain；Institute
Stating preparation method includes：
S101：Substrate is provided；
The specific material of substrate is not limited in the present embodiment, optionally, the substrate can be that InP substrate or GaAs are served as a contrast
Bottom.
S102：N faces ducting layer, active layer, P faces ducting layer are sequentially formed over the substrate, and P faces ducting layer has
Bulge-structure, the bulge-structure form fiber waveguide.
It is shown in Figure 3, for the sectional view of the BB ' lines along Fig. 2, N faces ducting layer 12 is sequentially formed on the substrate 11, is had
Active layer 13, P faces ducting layer 14, wherein, it is fiber waveguide knot to have bulge-structure 15A, bulge-structure 15A on P faces ducting layer 14
Structure.The preparation method for not limiting N faces ducting layer 12, active layer 13 and P faces ducting layer 14 in the present embodiment, optionally, use
MOCVD (Metal-organic ChemicalVapor Deposition, metallorganic chemical vapor deposition) technique
Carry out the growth of each layer.
The concrete structure of active layer 13 is not limited in the present embodiment, can be that single quantum can also be MQW
Structure, comprising multilayer potential barrier and potential well material, this is not construed as limiting in the present embodiment.
S103：Using carrier concentration control mode P faces ducting layer bulge-structure prolonging along the fiber waveguide
Stretch direction and form periodicity conductive region；
It is shown in Figure 4, for the sectional view of the AA ' lines along Fig. 2；Using carrier concentration control mode in the waveguide of P faces
The periodicity conductive structure 15 that the cycle is Λ is formed on layer 14.
It should be noted that the specific preparation method of periodicity conductive structure includes in the present embodiment：In P faces waveguide
Barrier layer is made on layer；The barrier layer is patterned, the barrier layer opening corresponds to the periodicity conductive region to be formed
Position.
Specifically, patterning the barrier layer is included by photoetching, dry or wet etch technique on the barrier layer
Opening is made, the open area as subsequently needs to form the position of periodicity conductive region by ion implantation technology.
Using ion implanting or carrier diffusion mode, carrier control is carried out to P faces ducting layer, forms the week
Phase property conductive region.
Ion implanting mode or carrier diffusion technique are used in the present embodiment, due to not needing photoetching process to form the cycle
Property conductive structure, then fiber waveguide will not be caused to damage, and in specific region formed high concentration carrier, unwanted
There is no carrier injection in region, the loss that carrier introduces so for whole piece fiber waveguide falls below minimum, especially has
When the integrated equipment of rear end, low-loss can ensure that the energy of laser is efficiently injected into rear end integrated equipment along fiber waveguide
In, improve energy utilization efficiency.
S104：Prepare p side electrode and N faces electrode.
After the making of execution cycle property conductive structure, making forms p side electrode and N faces electrode, wherein, in P faces ducting layer
It is upper that p side electrode is directly made using magnetron sputtering technique.
And N faces electrode is located at another surface of substrate, first, by reduction process, substrate thinning to gain is coupled
The requirement thickness of distributed feedback laser, then carries out surface polishing again, finally, N faces electrode is made by magnetron sputtering technique.
Periodicity conductive region described in the present embodiment provides Ohmic contact for P faces ducting layer and p side electrode, and carries
The electric conductivity of the high Region Medium.Substrate 11, N faces ducting layer 12, active layer 13, P faces ducting layer 14 are not limited in the present embodiment,
Periodicity conductive region 15, p side electrode 16, the material of N faces electrode 17, it can be used according to practical structures and material property selection
N faces ducting layer 12 is n-type doping in the present embodiment, and P faces ducting layer 14 is undoped semi insulating material.
As shown in figure 4, distributed feedback semiconductor laser is coupled for the gain provided in the present embodiment, along bulge-structure
Bearing of trend schematic cross-section；The gain coupling distributed feedback semiconductor laser includes：Substrate 11, substrate 11 include relative
The first surface and second surface of setting；Along the N faces set gradually away from the direction of substrate surface on substrate first surface
Ducting layer 12, active layer 13, P faces ducting layer 14, wherein, P faces ducting layer 14 has bulge-structure, and bulge-structure forms light wave
Lead；Bulge-structure has periodicity conductive region 15；P side electrode 16 on bulge-structure；Positioned at the second surface of substrate 11
N faces electrode 17.Wherein, the cycle of periodicity conductive region 15 is Λ, gain coupling distributed feedback semiconductor laser
Excitation wavelength meets formula：
Neff* Λ=N* λ/2
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor effective refractive index, N is lasing
Wavelength rank, wherein, N is the positive integer more than 2.
By ion implanting mode or carrier diffusion technique in the present embodiment, the carrier concentration of control P faces ducting layer,
So as to realize the periodic distribution of semiconductor laser active area carriers, the distributed feed-back for forming gain coupling mechanism is partly led
Body laser.
By ion implanting or the depth of carrier concentration controlling cycle conductive region in the present embodiment, carved without passing through
Erosion is realized, so as to avoid the property for introducing the fiber waveguides such as stress, oxidation from changing.Relative to surface light of the prior art
Grid, because etching technics of the step to fiber waveguide has been lacked in carrier concentration control, without being changed because etachable material is different
Etching condition so that processing technology is easier, reduces production cost.
By the highly conductive region of manufacturing cycle in the present embodiment, the week of semiconductor laser active area carriers is realized
Phase property is distributed, and forms the distributed feedback semiconductor laser of gain coupling mechanism, one side lasing can be realized by plated film, is solved
The problem of prior art device technology is complicated, bilateral lasing, reduces technology difficulty, improves lasing power and energy utilization effect
Rate.
Meet formula in bragg wavelength excitation wavelength λ lasings：Neff* Λ=N* λ/2, wherein N are just whole more than 2
Number, represents cycle exponent number, and it is the high-order cycle to show device, and the corresponding cycle is longer, and processing dimension is bigger, improves making tolerance,
Without expensive accurate secondary epitaxy technique or nanometer grating or complicated grating technology of preparing, it is only necessary to normal photolithographic process, reduce
Cost of manufacture, improves yield rate, easily realizes and produces in enormous quantities and commercialization is promoted.
In addition, the carrier concentration control gain coupling distributed feedback semiconductor laser formed in the embodiment of the present invention can
Without coating film treatment, protectiveness film can be prepared in both ends Cavity surface, highly reflecting films or anti-can also be prepared in both ends Cavity surface
Reflectance coating.And the Cycle Length of periodicity conductive region allows have chirp in the present embodiment, as shown in figure 4, periodicity conduction region
Domain includes multiple periodic units, and each periodic unit includes a conductive region.In other embodiments of the invention, often
Individual periodic unit can be composite construction, including multiple conductive regions, wherein, multiple conductive regions in all periodic units
Structure is identical, but does not limit the concrete structure of composite construction in the present embodiment, can include multiple periodicity conductive regions
Composite construction or the composite construction for including multiple aperiodicity conductive regions, such as include multiple conductive regions, but it is more
Interval between individual conductive region is inconsistent, forms aperiodic structure.
Specifically, shown in Figure 5, p side electrode 14 includes multiple periodic units, and each periodic unit includes three
Periodicity conductive region 15 ', so as to form the sampling period.
Material and the making of each structure of gain coupling distributed feedback semiconductor laser are not limited in the present embodiment
Technique, optionally, it may refer to the manufacture craft in above example and material selection.
In the present embodiment, due to there is minor structure in each cycle of periodicity conductive region, thus the sampling period is formed,
Dual wavelength or multi-wavelength oscillation can be realized, if the structure such as integration gain switch or the regulation and control of Q values or technology improve pulse peak
It is worth power, then can realizes nonlinear application using semi-conducting material, such as the conversion etc. of difference frequency, frequency multiplication, sum of fundamental frequencies.
The present invention also provides another gain coupling distributed feedback semiconductor laser preparation method, and its flow chart is as schemed
Shown in 6, including：
S201：Substrate is provided；
S202：N faces ducting layer, active layer, P faces ducting layer and highly doped cap rock are sequentially formed over the substrate, it is described
The doping concentration of highly doped cap rock is in 1*1018cm-3~1*1019cm-3The order of magnitude；
S203：The highly doped cap rock in part and P faces ducting layer are removed, forms bulge-structure, the bulge-structure is fiber waveguide,
And the highly doped cap rock positioned at the bulge-structure surface forms the periodic structure along the bulge-structure bearing of trend；
S204：Region outside the highly doped cap rock forms insulating medium layer；
In the present embodiment, the region outside the highly doped cap rock forms insulating medium layer, specifically includes：
Prepare the insulating medium layer of flood structure；
The upper surface of periodicity conductive structure is exposed by photoetching, etching mode again, highly doped cap rock is exposed to come,
So as to which the region outside highly doped cap rock forms insulating medium layer.
S205：Prepare p side electrode and N faces electrode.
From making step above can be seen that in the present embodiment with fabrication cycle conductive structure in above example
Mode is different, refers to Fig. 7, and Fig. 7 is that gain couples section of the distributed feedback semiconductor laser along the bearing of trend of fiber waveguide
Scheme, after the making of N faces ducting layer 22, active layer 23, P faces ducting layer 24 that completed on substrate 21 in the present embodiment, in P faces
The highly doped cap rock in whole face is first produced on ducting layer 24, is then etched by photoetching, dry/wet, usual semiconductor technology,
The highly doped cap rock in part and P faces ducting layer are removed, forms bulge-structure, the bulge-structure is fiber waveguide, and the present embodiment
In remaining highly doped cap rock form periodicity conductive structure 25 along the bearing of trend of fiber waveguide, then prepare dielectric 28
And the upper surface of periodicity conductive structure 25 is exposed by photoetching, etching mode, gold is then grown on highly doped cap rock again,
P side electrode is formed, and N faces electrode is made on another surface of substrate, ultimately forms point with periodicity conductive structure
Cloth feedback laser.
Accordingly, a kind of gain coupling distributed feedback semiconductor laser is also provided in the present embodiment, using above-mentioned making
Method is formed, as shown in fig. 7, gain coupling distributed feedback laser includes：
Substrate 21, the substrate 21 include the first surface and second surface being oppositely arranged；
On the substrate first surface along away from the substrate surface direction set gradually N faces ducting layer 22,
Active layer 23, P faces ducting layer 24, wherein, P faces ducting layer 24 has bulge-structure, and the bulge-structure forms fiber waveguide；
Highly doped cap rock on the bulge-structure, the doping concentration of the highly doped cap rock is in 1*1018cm-3~
1*1019cm-3The order of magnitude, the highly doped cap rock form periodicity conductive region 25；
Cover the insulating medium layer 28 of the exterior domain of the highly doped cap rock；
P side electrode 26 on the highly doped cap rock；
Positioned at the N faces electrode 27 of the substrate second surface.
Material and the making of each structure of gain coupling distributed feedback semiconductor laser are not limited in the present embodiment
Technique, optionally, substrate 21 is GaN materials, N faces ducting layer 22, active layer 23 and P faces ducting layer 24 and large area it is highly doped
Miscellaneous cap rock prepares to be formed using MBE extensional modes.Wherein, N faces ducting layer 22 is n-type doping, and active layer 23 is MQW,
Comprising multilayer potential barrier and potential well material, P faces ducting layer 24 is the conductive material of p-type doping, and doping concentration is in 1*1015cm-3~1*
1017cm-3The order of magnitude, the doping concentration of the highly doped cap rock of large area is in 1*1018cm-3~1*1019cm-3The order of magnitude.
Unlike a upper embodiment, in the present embodiment, because the material of periodicity conductive region is also to pass through crystal
Prepared by epitaxial growth regime, and P faces ducting layer is that p-type is lightly doped, thus be suitable for buying ready-made chip on the market
It is processed preparation.
It should be noted that the gain coupling distribution that the preparation method provided in both the above embodiment of the present invention is formed is anti-
To present in semiconductor laser, the p side electrode on bulge-structure can also include the first p side electrode and the second p side electrode, and described the
The bearing of trend of one p side electrode and second p side electrode is identical with the bearing of trend of the fiber waveguide；Wherein, the first P
The highly doped cap rock of face electrode covering forms period 1 property conductive structure, the highly doped cap rock of the second p side electrode covering
Form Secondary periodicity conductive structure；The cycle of the period 1 property conductive region and the Secondary periodicity conductive region is not
It is identical.
Specifically, as shown in figure 8, gain coupling distributed feedback semiconductor laser includes substrate 31, on substrate 31
N faces ducting layer 32, active area 33, P faces ducting layer 34, there is bulge-structure 35, and tie on P faces ducting layer 34 positioned at projection
P side electrode 36 on structure and the N faces electrode 37 positioned at another surface of substrate 31.
It should be noted that in the present embodiment unlimited fixed cycle conductive structure generation type, optionally, periodically lead
Electric structure is formed using carrier concentration control mode or formed by highly doped cap rock, is formed when by highly doped cap rock
When, the gain coupling distributed feedback semiconductor laser also includes insulating medium layer (not shown).
In addition, also include the P faces of bearing of trend identical the first with the fiber waveguide in the present embodiment relief structure 35
Electrode and the second p side electrode, the highly doped cap rock of the first p side electrode covering forms period 1 property conductive structure, described
The highly doped cap rock of second p side electrode covering forms Secondary periodicity conductive structure；Wherein, the period 1 property conductive region
Differed with the cycle of the Secondary periodicity conductive region.As shown in figure 8, the cycle of a cycle conductive region is Λ1,
The cycle of another periodicity conductive region is Λ2, wherein, the excitation wavelength of two periodicity conductive regions meets formula：
Neff*Λi=N* λi/2
Wherein, λiFor the operation wavelength of laser, ΛiFor Bragg grating period, NeffFor effective refractive index, N is lasing
Wavelength rank, wherein, N is positive integer more than 2, i=1,2.
In the present embodiment, due to two kinds of periodic structures, electric current is injected separately into by both sides p side electrode, thus can be with
By adjusting Injection Current mode so that same laser is operated in different wavelength respectively.It can also be injected by adjusting
Galvanic areas, realize that different wave length distinguishes lasing, wavelength can also be tuned by the control of temperature and electric current, same
Higher tuning range is obtained on the single laser of length, simplifies packaging technology.It is it is also possible to real using semi-conducting material
Existing nonlinear application, such as the conversion etc. of difference frequency, frequency multiplication, sum of fundamental frequencies.
It should be noted that each embodiment in this specification is described by the way of progressive, each embodiment weight
Point explanation is all difference with other embodiment, between each embodiment identical similar part mutually referring to.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (9)
1. a kind of gain couples distributed feedback semiconductor laser preparation method, it is characterised in that including：
Substrate is provided；
N faces ducting layer, active layer, P faces ducting layer are sequentially formed over the substrate, P faces ducting layer has bulge-structure,
The bulge-structure forms fiber waveguide；
Formed using bulge-structure bearing of trend along the fiber waveguide of the carrier concentration control mode in P faces ducting layer
Periodicity conductive region；
Prepare p side electrode and N faces electrode.
2. gain according to claim 1 couples distributed feedback semiconductor laser preparation method, it is characterised in that described
Cycle is formed using bulge-structure bearing of trend along the fiber waveguide of the carrier concentration control mode in P faces ducting layer
Property conductive region, is specifically included：
Barrier layer is made on the ducting layer of the P faces；
The barrier layer is patterned, the barrier layer opening corresponds to the position of the periodicity conductive region to be formed；
Using ion implanting or carrier diffusion mode, carrier control is carried out to P faces ducting layer, forms the cycle
Property conductive region.
3. a kind of gain couples distributed feedback semiconductor laser, it is characterised in that using the making described in claim 1 or 2
Method makes to be formed, and the gain coupling distributed feedback laser includes：
Substrate, the substrate include the first surface and second surface being oppositely arranged；
On the substrate first surface along away from the substrate surface direction set gradually N faces ducting layer, active layer,
P faces ducting layer, wherein, P faces ducting layer has bulge-structure, and the bulge-structure forms fiber waveguide；The bulge-structure
With controlling the periodicity conductive region to be formed by carrier；
P side electrode on the bulge-structure；
Positioned at the N faces electrode of the substrate second surface.
4. gain according to claim 3 couples distributed feedback semiconductor laser, it is characterised in that the periodicity is led
Electric region includes multiple periodic units, and each periodic unit includes a conductive region.
5. gain according to claim 3 couples distributed feedback semiconductor laser, it is characterised in that the periodicity is led
Electric region includes multiple periodic units, and each periodic unit includes multiple conductive regions.
6. gain according to claim 3 couples distributed feedback semiconductor laser, it is characterised in that the bulge-structure
On also there is groove, the bearing of trend of the groove is identical with the bearing of trend of the fiber waveguide, and the groove is by the light
Waveguide is divided into period 1 property conductive region and Secondary periodicity conductive region；
Wherein, the cycle of the period 1 property conductive region and the Secondary periodicity conductive region differs.
7. a kind of gain couples distributed feedback semiconductor laser preparation method, it is characterised in that including：
Substrate is provided；
N faces ducting layer, active layer, P faces ducting layer and highly doped cap rock, the highly doped cap rock are sequentially formed over the substrate
Doping concentration in 1*1018cm-3~1*1019cm-3The order of magnitude；
The highly doped cap rock in part and P faces ducting layer are removed, forms bulge-structure, the bulge-structure is fiber waveguide, and is located at institute
State periodic structure of the highly doped cap rock formation on bulge-structure surface along the bulge-structure bearing of trend；
Region outside the highly doped cap rock forms insulating medium layer；
Prepare p side electrode and N faces electrode.
8. a kind of gain couples distributed feedback semiconductor laser, it is characterised in that using the preparation method described in claim 7
Formed, the gain coupling distributed feedback laser includes：
Substrate, the substrate include the first surface and second surface being oppositely arranged；
On the substrate first surface along away from the substrate surface direction set gradually N faces ducting layer, active layer,
P faces ducting layer, wherein, P faces ducting layer has bulge-structure, and the bulge-structure forms fiber waveguide；
Highly doped cap rock on the bulge-structure, the doping concentration of the highly doped cap rock is in 1*1018cm-3~1*
1019cm-3The order of magnitude, the highly doped cap rock form periodicity conductive region；
Cover the insulating medium layer of the exterior domain of the highly doped cap rock；
P side electrode on the highly doped cap rock；
Positioned at the N faces electrode of the substrate second surface.
9. gain according to claim 8 couples distributed feedback semiconductor laser, it is characterised in that the p side electrode
Including the first p side electrode and the second p side electrode, the bearing of trend of first p side electrode and second p side electrode with it is described
The bearing of trend of fiber waveguide is identical；
Wherein, the highly doped cap rock of the first p side electrode covering forms period 1 property conductive structure, the 2nd P faces electricity
The highly doped cap rock of pole covering forms Secondary periodicity conductive structure；
The cycle of the period 1 property conductive region and the Secondary periodicity conductive region differs.
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Cited By (5)
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| WO2019072185A1 (en) * | 2017-10-13 | 2019-04-18 | 中国科学院长春光学精密机械与物理研究所 | Gain coupling distributed feedback semiconductor laser and manufacturing method therefor |
| CN111769437A (en) * | 2020-07-21 | 2020-10-13 | 厦门市三安集成电路有限公司 | Bragg grating, preparation method thereof and distributed feedback laser |
| CN112072466A (en) * | 2020-09-08 | 2020-12-11 | 因林光电科技(苏州)有限公司 | Semiconductor laser and preparation method thereof |
| CN113948965A (en) * | 2021-10-18 | 2022-01-18 | 中国工程物理研究院应用电子学研究所 | Pure gain coupling distribution feedback type semiconductor laser and preparation method thereof |
| WO2023000430A1 (en) * | 2021-07-20 | 2023-01-26 | 苏州大学 | Gain coupling distributed feedback semiconductor laser and manufacturing method therefor |
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