CN1157613C - Method for making plane type DFB inner grating coupling structure - Google Patents
Method for making plane type DFB inner grating coupling structure Download PDFInfo
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- CN1157613C CN1157613C CNB011044314A CN01104431A CN1157613C CN 1157613 C CN1157613 C CN 1157613C CN B011044314 A CNB011044314 A CN B011044314A CN 01104431 A CN01104431 A CN 01104431A CN 1157613 C CN1157613 C CN 1157613C
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Abstract
The present invention relates to a method for making a grating coupled structure in novel plane type DFB, which comprises: a layer of dielectric film 7 is grown on an InP or GaAs epitaxial structural layer on substrate 1; mask grating graphic of submicron periodic medium is etched on the dielectric film, the periodic medium is used as mask, the epitaxial structural layer is selectively injected with ion sources or selectively diffused with impurity sources, and an ion injection island zone or impurity diffusion island zone of certain depth is formed in an epitaxial layer surface of the medium grid clearance; the dielectric film is removed, a periodic injection or diffusion zone grating structure with a smooth surface is retained on the epitaxial structural layer, and an epitaxial layer 5 is embedded on the plane grating.
Description
Technical field
The present invention relates to the method for a kind of making distributed feed-back (DFB) inner grating coupling structure, particularly a kind of method of making plane DFB inner grating coupling structure.
Background technology
At present when making dfb semiconductor laser diode and filtrator, grating all is to carve periodic bragg gratings in the method by etching on InP, the GaAs substrate or on its epitaxial structure layer earlier in the DFB, and then on grating, bury and the inner grating coupling structure that forms laser instrument (is seen document: Y.Luo et al as extension, Appl.Phys.Lett., Vol.55, PP.1606-1608,1989 and G.P.Li et al, Electronics Letters, Vol.28, PP.1726-1727,1992 and patent PCT/DE96/00837 etc.).Its common feature is that the surface before extension is buried is rough corrugated grating face.Because the cycle of grating only has the size of sub-micron, when making no matter utilize conventional wet chemical etching technique method, dry/wet to mix lithographic method or utilize the very high reactive ion etching method of control accuracy, the submicron grating that carves or be sine wave shape or be trapezoidal shape or be the sealene triangle shape.This rough grating face is actually the corrugated surface with various crystal orientation.Be called on-plane surface grating face.On this on-plane surface grating face, utilize any epitaxial device (MOVPE, CVD, MBE, CBE and LPE) to carry out extension and bury when growing, all can between grating face and epitaxial cover layer interface, stay more or less dislocation and defective.This is because epitaxial growth has anisotropic characteristics, when just beginning epitaxial growth, and the epitaxial growth speed difference on the different crystal orientations, on the microcosmic, in a ripple grating cycle, epitaxially grown material thickness is different everywhere.This because dislocation and the defective that anisotropic growth produces, tightly near the active luminous zone of device even directly entered active area (for example the etched portions active area forms the situation of fractionated gain coupling grating), thereby influence the photoelectric properties of device, and bring hidden danger for the reliability Work of device.
Summary of the invention
The objective of the invention is to make a kind of plane DFB optical grating construction, inject or diffusion of contaminants by on the extension structural sheet, making masked ion, form periodic transoid or barrier zones, these zones can reach the purpose that transmission light is played filtering and distributed feed-back to flowing into the vertical modulating action that distributed of charge carrier in the epitaxial structure district in extension structural sheet and ducting layer.
Principal feature of the present invention is:
A) growth one layer dielectric 7 on InP on the substrate 1 or GaAs epitaxial structure layer;
B) on deielectric-coating, cut out sub-micron periodic dielectric mask raster graphic;
C) be blindage with this periodic dielectric, select to inject ion gun to extension structural sheet surface
Or selection diffusion impurity source, in the epi-layer surface in medium grid gap, form certain
The ion of the degree of depth injects island district or diffusion of contaminants island district 6;
D) remove deielectric-coating, stay the cyclic injection or the diffusion of surfacing on the epitaxial structure layer
District's optical grating construction.
E) on this layer plane grating, bury epitaxial loayer 5.
The DFB inner grating coupling structure that the inventive method is made has the following advantages: 1. because the grating surface of making is fully smooth, thereby can reduce aforementioned on on-plane surface grating face outer time-delay because of the dislocation and the defect problem of anisotropic growth generation; 2. can be used for making the very strong novel passive DFB wave filter of dirigibility.When wave filter vertically do not add electric current the time, incident light through wave filter not filtered; And when wave filter vertically add electric current the time, incident light will be filtered off the output light of specific wavelength through wave filter; 3. can be advantageously used in making DFB active device with different gains stiffness of coupling.Regulate dutycycle or the injection of adjusting ion or the impurity diffusion zone degree of depth and just can reach this purpose; 4. the internal loss of waveguide is little, the reliability height of device.
Description of drawings
Fig. 1 is the method for making of making the DFB inner grating coupling structure.
Fig. 2 is a transoid ion injection plane type DFB inner grating coupling structure construction drawing.
Fig. 3 is neutral counterion injection plane type DFB inner grating coupling structure construction drawing.
Fig. 4 is a homotype ion injection plane type DFB inner grating coupling structure construction drawing.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
As shown in Figure 1,
1. go up the SiO of the about 0.1 μ m of growth one layer thickness at InP or GaAs epitaxial structure layer (structural sheet is 2,3,4 layers of extension on substrate 1)
2Or Si
3N
4Deielectric-coating 7 is shown in Fig. 1 (a);
2. utilize holography or electron beam exposure technology on deielectric-coating, to cut out required sub-micron periodic dielectric mask raster graphic. shown in Fig. 1 (b);
3. be blindage with this periodic dielectric, select to inject ion gun or select diffusion impurity source that the ion that forms certain depth in the epi-layer surface in medium grid gap injects island district or diffusion of contaminants island district 6, shown in Fig. 1 (c) to extension structural sheet surface;
4. utilize the buffered HF acid solution to remove deielectric-coating, just stayed the cyclic injection or the diffusion region optical grating construction of surfacing on the epitaxial structure layer, shown in Fig. 1 (d).The length a that is covered by deielectric-coating in the one-period is called dutycycle with the ratio of grating cycle b, and dutycycle gets 30%～70%, decides by designing requirement and process conditions.
5. on this layer plane grating, bury epitaxial loayer 5, promptly form plane DFB inner grating coupling structure.Shown in Fig. 1 (e).
Embodiment 1: transoid ion injection plane type DFB inner grating coupling structure
As shown in Figure 2, (the epitaxial structure layer comprises n type cushion 2, Multiple Quantum Well (MQW) active area 3 and thick, the doping content about 2 * 10 of about 100nm at n type (100) planar substrate 1 and epitaxial structure layer thereof
17/ cm
3P type layer 4) go up growth SiO earlier
2Deielectric-coating cuts out periodic dielectric mask grating thereon, and injection elects with n type ion gun Si (among also desirable Te, S, Se and the Sn a certain).Inject the about 60nm of the degree of depth, in floor 4, form the n type and inject island district 6; Remove SiO
2Extension p type burial layer 5 again behind the medium mask grating has promptly constituted transoid ion (injecting the conduction type of ion and the conductivity type opposite of burial layer 5) injection plane type DFB inner grating coupling structure.When adding forward voltage in schematic structure, the charge carrier of layer in 5 be because the transoid ion that is subjected in the layer 4 injects stopping of island 6, will be forced to concentrate in the periodicity gap on island flow through.Therefore, the charge carrier that flows to active area 3 just has periodic vertically Density Distribution, thereby the gain of active area is played modulating action.
Embodiment 2: neutral counterion injection plane type DFB inner grating coupling structure
As shown in Figure 3, elder generation's growth SiO on the n of embodiment one type (100) planar substrate 1 and epitaxial structure layer thereof
2Deielectric-coating cuts out periodic dielectric mask grating thereon, with neutral proton source He
+(also desirable proton H
+With transition metal Ti) injection that elects, form high resistance and inject island district 6, inject the degree of depth 60～150nm (being that injection region 6 can also be run through layer 4 and enter in the active region layer 3) in layer 4.Remove SiO
2Extension p type burial layer 5 behind the medium mask grating has promptly constituted neutral counterion injection plane type DFB inner grating coupling structure. because injection region 6 can be played the gain modulation effect to the charge carrier of vertical inflow active area equally for the high resistance district.
Embodiment 3: homotype ion injection plane type DFB inner grating coupling structure
As shown in Figure 4, (the epitaxial structure layer comprises p type cushion 2p, MQW active area 3, n type wall 4n and p type layer 8p at p type (100) planar substrate 1p and epitaxial structure layer thereof.The thick about 40nm of wall 4n, doping content about 2 * 10
17/ cm
3, the thick about 30nm of p type layer 8p, doping content about 3 * 10
17/ cm
3) SiO upward grows earlier
2Deielectric-coating cuts out periodic dielectric mask grating thereon, with n type ion gun Si (among also desirable Te, S, Se and the Sn a certain) injection that elects, injects the degree of depth 60～100nm, (being that a layer 8p need be run through in injection region 6).Remove SiO
2Behind the medium mask, extension n type burial layer 5n has promptly constituted homotype ion (conduction type that injects ion is identical with the conduction type of burial layer 5n) injection plane type DFB inner grating coupling structure.Add forward voltage when schematic structure, charge carrier among the floor 5n can only enter active area by island district 6, and the spacer region that does not inject works to stop charge carrier, therefore, the modulation of grating played the gain modulation effect in vertical carrier density of active area was subjected to.
Claims (11)
1. method for making plane type DFB inner grating coupling structure comprises step:
A) growth one layer dielectric 7 on InP on the substrate 1 or GaAs epitaxial structure layer;
B) on deielectric-coating, cut out sub-micron periodic dielectric mask raster graphic;
C) be blindage with this periodic dielectric, select to inject ion gun or select diffusion impurity source that the ion that forms certain depth in the epi-layer surface in medium grid gap injects island district or diffusion of contaminants island district 6 to extension structural sheet surface;
F) remove deielectric-coating, stay the cyclic injection or the diffusion region optical grating construction of surfacing on the epitaxial structure layer.
G) on this layer plane grating, bury epitaxial loayer 5.
2. by the described method of claim 1, it is characterized in that described deielectric-coating 7 is SiO
2Or Si
3N
4
3. by claim 1 or 2 described methods, it is characterized in that SiO
2Or Si
3N
4Thickness be 0.1 μ m.
4. by the described method of claim 1, it is characterized in that also comprising and remove deielectric-coating 7 with the buffered HF acid solution.
5. by claim 1 or 4 described methods, it is characterized in that dutycycle gets 30%-70%.
6. by the described method of claim 1, it is characterized in that described epitaxial structure layer comprises n type cushion 2, Multiple Quantum Well (MQW) active area 3 and p type layer 4.
7. by claim 1 or 6 described methods, the thickness that it is characterized in that P type layer 4 is that 100nm, doping content are 2 * 10
17/ cm
3
8. by the described method of claim 7, it is characterized in that the injection that elects with n type ion gun Si, the injection degree of depth is 60nm.
9. by the described method of claim 1, it is characterized in that with neutral proton source He
+(also desirable proton H
+With transition metal Ti) injection that elects, the injection degree of depth is 60～150nm.
10. by the described method of claim 1, it is characterized in that the epitaxial structure layer comprises p type cushion 2_p, MQW active area 3, n type wall 4_n and p type layer 8_p.
11. by claim 1 or 10 described methods, it is characterized in that the thick 40nm of being of wall 4_n, doping content is 2 * 10
17/ cm
3, p type layer 8p is thick to be that 30nm, doping content are 3 * 10
17/ cm
3
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| Application Number | Priority Date | Filing Date | Title |
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| CNB011044314A CN1157613C (en) | 2001-02-26 | 2001-02-26 | Method for making plane type DFB inner grating coupling structure |
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|---|---|---|---|
| CNB011044314A CN1157613C (en) | 2001-02-26 | 2001-02-26 | Method for making plane type DFB inner grating coupling structure |
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| CN1157613C true CN1157613C (en) | 2004-07-14 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100468090C (en) * | 2006-07-05 | 2009-03-11 | 中国科学院半导体研究所 | Absorption type gain-coupling distributed feedback bragg grating production method |
| CN106501898A (en) * | 2017-01-10 | 2017-03-15 | 中国石油大学(华东) | Metal nanoparticle-insulation composite material grating coupler |
| CN107611776B (en) * | 2017-10-13 | 2020-06-09 | 中国科学院长春光学精密机械与物理研究所 | Gain coupling distributed feedback semiconductor laser and manufacturing method thereof |
| CN108508518B (en) * | 2018-04-11 | 2021-06-01 | 青岛海信宽带多媒体技术有限公司 | Method for determining technological parameters of grating buried layer |
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