CN100468090C - Absorption type gain-coupling distributed feedback bragg grating production method - Google Patents
Absorption type gain-coupling distributed feedback bragg grating production method Download PDFInfo
- Publication number
- CN100468090C CN100468090C CNB2006100895905A CN200610089590A CN100468090C CN 100468090 C CN100468090 C CN 100468090C CN B2006100895905 A CNB2006100895905 A CN B2006100895905A CN 200610089590 A CN200610089590 A CN 200610089590A CN 100468090 C CN100468090 C CN 100468090C
- Authority
- CN
- China
- Prior art keywords
- bragg grating
- distributed feedback
- layer
- absorption type
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention is an absorption type gain coupled distribution feedback Prague grating making method, comprising the steps of: large-area depositing a layer of oxide medium film on epitaxial substrate; coating a photoresist layer on the epitaxial plate; exposing and developing and obtaining Prague grating mask of oxide medium; etching semiconductor compound and obtaining Prague grating on the epitaxial plate; removing the photoresist Prague grating mask from the epitaxial plate and remaining oxide medium Prague grating mask; on the epitaxial with oxide medium Prague grating mask, epitaxially growing absorption type gain coupled distribution feedback Prague grating's absorption layer and filling sunk part of the grating; removing the oxide medium Prague grating mask on the epitaxial plate; making secondary epitaxy on the epitaxial plate grown with absorption layer to in turn grow lower separate confinement layer, active region, upper separate confinement layer, cover layer and contact layer.
Description
Technical field
The invention belongs to the photoelectron technology field, relate to a kind of new producing method of absorption type gain-coupling distributed feedback bragg grating.One of key point is to introduce the medium of oxides film to serve as the mask of making Bragg grating on the semiconductor epitaxial wafer surface.Because oxide dielectric film is more stable in the process of making grating for photoresist, so help controlling flexibly the shape and the degree of depth of the grating of scribing.Another key point is, the epitaxial wafer surface grating scribe finish after, under the situation that keeps medium of oxides Bragg grating mask, the absorption layer of absorption type gain-coupling distributed feedback bragg grating is made in epitaxial growth.The benefit of doing like this is fundamentally to have solved when having scribed the semiconductor surface epitaxial growth behind the grating because the volatilization of semiconductor material and the difficult problem that migration makes raster shape flatten and the grating pattern is difficult to keep.The present invention is mainly used in and makes absorption type gain coupling distributed feedback laser.
Background technology
Distributed feedback laser is the main light source in the high capacity long-distance optical fiber communication system.It is not that concentrated reflection by the end face of laser instrument provides that distributed feedback laser swashs needed feedback when penetrating, but provide by built-in Bragg grating distributed feed-back.This retroactive effect makes that the light wave of propagated forward and back-propagating is coupled in the active layer.Between the light wave that two bundle reverse directions are propagated, have only the wavelength that satisfies Bragg condition relevant coupling just can occur, this point makes distributed feedback laser have good monochromaticity and stability.Distributed feedback bragg grating mainly contains two kinds of feedback systems, i.e. the gain-coupling distributed feedback bragg grating of refractive index cycle refractive index variable coupling distributed feedback bragg grating and gain period variation.Index distribution feedback grating is to scribe Bragg grating on transparent limiting layer respectively, bury then that packed layer forms, index-coupled type distributed feedback laser is existing two patterns that loss is identical and minimum with the symmetrical place of bragg wavelength, is two vertical module lasings so say such laser instrument on the principle.Usually, gain coupling distributed feedback grating is directly to scribe Bragg grating at active area, buries then that packed layer forms, and can realize single module lasing.But such gain coupling distributed feedback grating brings defective to active area easily, has reduced luminescence efficiency.If the conventional transparent grating that will be produced on the limiting layer respectively changes over the absorption-type grating with absorption, the type gain-coupling distributed feedback bragg grating then can be absorbed.
In the preparation process of absorption type gain coupling distributed feedback grating two critical step are arranged.One is scribed needed Bragg grating exactly on semiconductor epitaxial wafer, cycle, the degree of depth and the shape of Bragg grating can be accurately controlled in requirement.Generally obtain the Bragg grating figure by the resist exposure that is coated in the epitaxial wafer surface is developed, the Bragg grating figure with photoresist utilizes dried wet-etching technology to scribe formation cycle Bragg grating on semiconductor epitaxial wafer as mask then.Because the anti-dried wet etching performance of general photoresist is not very good, so when semiconductor epitaxial wafer was carried out etching, the degree of depth and the homogeneity of the Bragg grating of scribing were restricted, this point is unfavorable for improving the performance of distributed feedback laser.Second committed step is to bury packed layer in the epitaxial wafer surface epitaxial growth of having scribed Bragg grating.Because there is the volatilization migration in the semiconducting compound of grating surface in temperature-rise period, so the degree of depth of Bragg grating shoals, shape also can change, and this problem will have a strong impact on the feedback performance of grating, even make grating lose retroactive effect.It at present mainly is the semiconducting compound volatilization (reference: 1. J.Crystal Growth, 1998, Vol.195 of restraining grating surface in the epitaxially grown condition of grating surface by changing, P.503-509 and 2. J.Crystal Growth, 2003, Vol.248, P.384-389).Generally can only play the effect of the semiconducting compound volatilization that slows down grating surface by this approach, be still waiting to improve if think to address this problem fully.Fundamental purpose of the present invention is exactly the problem that exists in above-mentioned two committed steps in making distributed feedback laser Bragg grating process in order to solve.
Summary of the invention
The method for making that the purpose of this invention is to provide a kind of absorption type gain coupling distributed feedback laser.Introduce medium of oxides and serve as the mask of scribing grating on the semiconductor epitaxial wafer surface.Because the medium of oxides mask is more stable in scribing the process of grating for photoresist, so can better control the shape and the degree of depth of the grating of scribing.In addition, the epitaxial wafer surface grating scribe finish after, keep the medium of oxides mask when scribing Bragg grating, the absorption layer of epitaxial growth absorption type gain-coupling distributed feedback bragg grating.Thereby fundamentally solved when having scribed the semiconductor surface epitaxial growth absorption layer of grating because the difficult problem that the volatilization of compound semiconductor material and migration effect make grating shoal and the grating pattern is difficult to keep.
The concrete steps of this absorption type gain coupling distributed feedback laser method for making are described below:
The method for making of a kind of absorption type gain coupling of the present invention distributed feedback laser is characterized in that, comprises the steps:
(1) large tracts of land deposition layer of silicon dioxide film on gallium arsenide or indium phosphide substrate;
(2) on silica membrane, be coated with one deck photoresist;
(3) resist exposure and development are obtained photoresist Bragg grating mask;
(4) serve as with photoresist Bragg grating mask and shelter, the etching silicon dioxide film obtains silicon dioxide Bragg grating mask;
(5) serve as together with photoresist Bragg grating mask and silicon dioxide Bragg grating mask and shelter, gallium arsenide or indium phosphide substrate are carried out etching, on gallium arsenide or indium phosphide substrate, obtain Bragg grating;
(6) remove photoresist Bragg grating mask, keep silicon dioxide Bragg grating mask;
(7) epitaxial growth absorption layer, the part of the indentation of filling Bragg grating is to form absorption type gain-coupling distributed feedback bragg grating;
(8) remove silicon dioxide Bragg grating mask;
(9) under secondary epitaxy on the absorption type gain-coupling distributed feedback bragg grating is grown successively respectively limiting layer, active area, on limiting layer, cap rock and contact layer respectively.
Wherein the thickness of silica membrane is less than 100 nanometers.
Wherein holographic exposure technology or electron beam lithography are adopted in the exposure in the step (3).
Wherein the etching in the step (5) adopts wet etching and dry etching to combine, and dry etching adopts Ecr plasma lithographic technique, reactive ion etching technology or inductively coupled plasma lithographic technique.
The wherein cycle of the Bragg grating mask of photoresist and needed excitation wavelength correspondence.
Wherein during the epitaxial growth absorption layer, require the time of control growth, make absorption layer just in time fill and lead up the part of the indentation of Bragg grating.
Wherein the energy bandgaps of absorption layer material requires the pairing energy bandgaps of active area excitation wavelength less than design.
Description of drawings
In order to further specify content of the present invention, below in conjunction with accompanying drawing and example the present invention is described in detail, wherein:
Fig. 1 is the synoptic diagram after having deposited the medium of oxides film on the epitaxial wafer;
Fig. 2 is being coated with the synoptic diagram behind the photoresist on the epitaxial wafer;
Fig. 3 is the synoptic diagram of having scribed behind the photoresist Bragg grating mask;
Fig. 4 is the synoptic diagram of having scribed behind the medium of oxides Bragg grating mask;
Fig. 5 has scribed the synoptic diagram behind the Bragg grating on the epitaxial wafer surface;
Fig. 6 is the synoptic diagram that removes behind the photoresist Bragg grating mask;
Fig. 7 is the synoptic diagram behind the absorption layer of absorption type gain-coupling distributed feedback bragg grating of having grown;
Fig. 8 is the synoptic diagram that removes behind the medium of oxides Bragg grating mask;
Fig. 9 is the structural representation of the epitaxial wafer behind the secondary epitaxy.
Embodiment
See also Fig. 1 to Fig. 9, the method for making of a kind of absorption type gain coupling of the present invention distributed feedback laser comprises the steps:
(1) large tracts of land deposition one deck medium of oxides film 2 (see figure 1)s on epitaxial substrate 1; This epitaxial substrate 1 adopts gallium arsenide or indium phosphide compound semiconductor materials; The thickness of this medium of oxides film 2 is less than 100 nanometers, and this medium of oxides film 2 adopts silicon dioxide or silicon nitride material;
(2) on the epitaxial wafer that has deposited medium of oxides film 2, be coated with one deck photoresist 3 (see figure 2)s;
(3) with resist exposure and develop and to obtain Bragg grating mask 4 (see figure 3)s of photoresist; Described resist exposure and development obtain the Bragg grating mask 4 of photoresist, and holographic exposure technology or electron beam lithography are adopted in this exposure; The wherein cycle of the Bragg grating mask 4 of photoresist and needed excitation wavelength correspondence;
(4) serve as with photoresist Bragg grating mask 4 and shelter, etching oxide dielectric film 2 obtains Bragg grating mask 5 (see figure 4)s of medium of oxides;
(5) serve as together with photoresist Bragg grating mask 4 and medium of oxides Bragg grating mask 5 and shelter, semiconducting compound is carried out etching, on epitaxial wafer, obtain Bragg grating 6 (see figure 5)s; Etching wherein is that wet method and dry method combine epitaxial wafer is carved, and dry etching adopts Ecr plasma etching, reactive ion etching or inductively coupled plasma lithographic technique;
(6) remove photoresist Bragg grating mask 4 (see figure 6)s on the epitaxial wafer, keep medium of oxides Bragg grating mask 5;
(7) on the epitaxial wafer that keeps medium of oxides Bragg grating mask 5, absorption layer 7 (see figure 7)s of epitaxial growth absorption type gain-coupling distributed feedback bragg grating, the part of the indentation of filling grating;
(8) remove medium of oxides Bragg grating mask 5 (see figure 8)s on the epitaxial wafer;
(9) under secondary epitaxy is grown successively on the epitaxial wafer of absorption layer 7 of having grown respectively limiting layer 8, active area 9, on limiting layer 10, cap rock 11 and contact layer 12 (see figure 9)s respectively.
When wherein growing absorption layer 7, require the time of control growth, the low concave portion of the Bragg grating that makes absorption layer 7 just in time fill and lead up to scribe previously; The energy bandgaps of these absorption layer 7 materials requires the pairing energy bandgaps of active area excitation wavelength less than design.
Embodiment
Please consult Fig. 1 again to shown in Figure 9:
(1) as shown in Figure 1, large tracts of land deposition layer of silicon dioxide medium of oxides film 2 on epitaxial substrate 1.Epitaxial substrate 1 can be gallium arsenide or indium phosphide, selects indium phosphide among the embodiment for use.Medium of oxides film 2 can adopt silicon dioxide or silicon nitride material, has selected silicon dioxide among the embodiment for use.This one deck silica oxides dielectric film 2 will be used for making the Bragg grating mask.Because silica oxides dielectric film 2 is more stable scribing in the process of grating for traditional photoresist 3, have better masking action, can cut out the suitable Bragg grating of pattern.In addition,, compound semiconductor grows, so the Bradley of silica dioxide medium sound of laughing grating mask 5 can also use as the semi-conductive mask of growth compound owing to being difficult on the silica dioxide medium.The thickness size of silica oxides dielectric film 2 directly influences the making effect of Bragg grating, is generally less than 100 nanometers, is 20 nanometers among the embodiment;
(2) as shown in Figure 2, whirl coating on the epitaxial wafer that has deposited silica oxides dielectric film 2 is coated with last layer photoresist 3.This layer photoetching glue 3 will be used for making Bragg grating mask 4 in the back;
(3) as shown in Figure 3, the Bragg grating mask 4 that the photoresist on the epitaxial wafer 3 is exposed and develops and obtain needed photoresist.Exposure method can adopt holographic exposure or electron beam lithography.Holographic exposure technology single exposure can only form the raster graphic in a kind of cycle, and equipment is more cheap.Electron beam lithography then can once form the raster graphic of different cycles, but equipment is relatively more expensive.Adopt the holographic exposure technology herein.The grating cycle is corresponding with needed excitation wavelength.The quality of the Bragg grating mask 4 of photoresist herein is most important, will be used to serve as the mask of scribing grating on medium of oxides film 2;
(4) as shown in Figure 4, serve as with photoresist Bragg grating mask 4 and to shelter, wet etching silica oxides dielectric film 2 obtains the Bragg grating mask 5 of silica oxides medium.Because the thickness of silica oxides dielectric film 2 is very little, in the process of wet etching, need do test several times and determine best etching condition, just can obtain the Bragg grating mask of suitable silica oxides medium.Medium of oxides Bragg grating mask 5 is for photoresist Bragg grating mask 4, and is more stable in scribing the process of grating, so can better control the shape and the degree of depth of the grating of scribing;
(5) as shown in Figure 5, serve as together with photoresist Bragg grating mask 4 and medium of oxides Bragg grating mask 5 and to shelter, semiconducting compound is carried out etching, make Bragg grating 6 for a moment in extension.Dry etch process and wet-etching technology are combined utilization, help on semiconductor epitaxial wafer, scribing and obtain high-quality Bragg grating.Dry etch process can be chosen all multi-methods such as reactive ion etching process or Ecr plasma etching technics, chooses the Ecr plasma etching technics herein.Through dry etching, obtain the basic pattern of Bragg grating after, epitaxial wafer is put into wet etching solution soaks the regular hour, purpose is to make the Bragg grating surface cunning that flattens.Owing to adopted silicon dioxide Bragg grating mask,, and can keep good grating pattern herein so the degree of depth of scribing of grating can be bigger;
(6) as shown in Figure 6, remove the photoresist Bragg grating mask 4 on the epitaxial wafer, keep silica oxides medium Bragg grating mask 5.The silica oxides medium Bragg grating mask that keeps will serve as when the epitaxial growth absorption layer to be sheltered;
(7) as shown in Figure 7, on the epitaxial wafer that keeps medium of oxides Bragg grating mask 5, the absorption layer 7 of epitaxial growth absorption type gain coupling grating, the low concave portion of filling Bragg grating 6.Adopt mocvd method growth absorption layer 7 herein.The time of control growth, the low concave portion of the Bragg grating 6 that makes absorption layer 7 just in time fill and lead up to scribe previously.The energy bandgaps of absorption layer 7 has the certain absorption effect less than the pairing energy bandgaps of active area excitation wavelength of design.Absorption layer 7 is used to make the absorption type gain coupling distributed feedback laser epitaxial wafer of 1.3 microns excitation wavelengths for the energy bandgaps wavelength with the substrate coupling is 1.32 microns an InGaAsP material in the example.In the process that heats up,, make grating keep original pattern because the protective effect of silicon dioxide Bragg grating dielectric mask 5 can be restrained the volatilization and the migration of semiconducting compound.Simultaneously, because compound semiconductor is difficult in 5 superficial growths of medium of oxides Bragg grating, and,, obtain desirable absorption type gain coupling distributed feedback grating structure so absorption layer 7 just in time is grown in the low concave portion of Bragg grating 6 easily in the compound semiconductor superficial growth;
(8) as shown in Figure 8, remove the medium of oxides Bragg grating mask 5 on the epitaxial wafer, prepare to carry out the parts such as active area of secondary epitaxy growth absorption type gain coupling distributed feedback laser;
(9) as shown in Figure 9, under secondary epitaxy is grown successively on the epitaxial wafer of absorption layer 7 of having grown respectively limiting layer 8, active area 9, on limiting layer 10, cap rock 11 and contact layer 12 respectively.In the example, limiting layer 8 is the aluminium indium arsenic material that mates with the indium phosphide substrate respectively down, active area 9 is 1.31 microns indium gallium aluminum arsenide multi-quantum pit structure for excitation wavelength, the aluminium indium arsenic material of last limiting layer 10 respectively and indium phosphide substrate coupling, cap rock 11 is a p type indium phosphide, and contact layer 12 is the p type heavy doping indium gallium arsenic material that mates with the indium phosphide substrate.So far the distributed feedback laser epitaxial wafer that includes the absorption type gain coupling grating just completes.
This characteristics that include the distributed feedback laser of absorption type gain coupling grating are: manufacture craft is simple, need not the end face anti-reflective film; The single mode selectivity is not subjected to the influence of end face reflectivity, so the single mode yield rate improves; Frequency bandspread is very little during the high speed dynamic modulation; Has the ability that the single mode ultrashort light pulse takes place.
The present invention relates to the method for making of absorption type gain coupling distributed feedback laser, its most important character and meaning have 2 points: the first is introduced the medium of oxides film and is served as the mask of scribing grating on the semiconductor epitaxial wafer surface, because the medium of oxides mask is for the photoresist mask, more stable in scribing the process of grating, so can better control the shape and the degree of depth of the grating of scribing.Another point is, after the epitaxial wafer surface grating is scribed and is finished, under the condition of the medium of oxides mask when Bragg grating is scribed in reservation, the absorption layer of epitaxial growth absorption type gain-coupling distributed feedback bragg grating, thus fundamentally solved when having scribed the semiconductor surface epitaxial growth absorption layer of grating because the difficult problem that the volatilization of compound semiconductor material and migration effect make grating shoal and the grating pattern is difficult to keep.
Claims (7)
1, a kind of method for making of absorption type gain coupling distributed feedback laser is characterized in that, comprises the steps:
(1) large tracts of land deposition layer of silicon dioxide film on gallium arsenide or indium phosphide substrate;
(2) on silica membrane, be coated with one deck photoresist;
(3) resist exposure and development are obtained photoresist Bragg grating mask;
(4) serve as with photoresist Bragg grating mask and shelter, the etching silicon dioxide film obtains silicon dioxide Bragg grating mask;
(5) serve as together with photoresist Bragg grating mask and silicon dioxide Bragg grating mask and shelter, gallium arsenide or indium phosphide substrate are carried out etching, on gallium arsenide or indium phosphide substrate, obtain Bragg grating;
(6) remove photoresist Bragg grating mask, keep silicon dioxide Bragg grating mask;
(7) epitaxial growth absorption layer, the part of the indentation of filling Bragg grating is to form absorption type gain-coupling distributed feedback bragg grating;
(8) remove silicon dioxide Bragg grating mask;
(9) under secondary epitaxy on the absorption type gain-coupling distributed feedback bragg grating is grown successively respectively limiting layer, active area, on limiting layer, cap rock and contact layer respectively.
2, the method for making of absorption type gain coupling distributed feedback laser according to claim 1 is characterized in that wherein the thickness of silica membrane is less than 100 nanometers.
3, the method for making of absorption type gain coupling distributed feedback laser according to claim 1 is characterized in that, wherein holographic exposure technology or electron beam lithography are adopted in the exposure in the step (3).
4, the method for making of absorption type gain coupling distributed feedback laser according to claim 1, it is characterized in that, wherein the etching in the step (5) adopts wet etching and dry etching to combine, and dry etching adopts Ecr plasma lithographic technique, reactive ion etching technology or inductively coupled plasma lithographic technique.
5, the method for making of absorption type gain coupling distributed feedback laser according to claim 1 is characterized in that, wherein the cycle of photoresist Bragg grating mask and needed excitation wavelength correspondence.
6, the method for making of absorption type gain according to claim 1 coupling distributed feedback laser is characterized in that, wherein during the epitaxial growth absorption layer, requires the time of control growth, makes absorption layer just in time fill and lead up the part of the indentation of Bragg grating.
7, according to the method for making of claim 1 or 6 described absorption type gain coupling distributed feedback laser, it is characterized in that wherein the energy bandgaps of absorption layer material requires the pairing energy bandgaps of active area excitation wavelength less than design.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100895905A CN100468090C (en) | 2006-07-05 | 2006-07-05 | Absorption type gain-coupling distributed feedback bragg grating production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100895905A CN100468090C (en) | 2006-07-05 | 2006-07-05 | Absorption type gain-coupling distributed feedback bragg grating production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101101345A CN101101345A (en) | 2008-01-09 |
| CN100468090C true CN100468090C (en) | 2009-03-11 |
Family
ID=39035709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100895905A Expired - Fee Related CN100468090C (en) | 2006-07-05 | 2006-07-05 | Absorption type gain-coupling distributed feedback bragg grating production method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100468090C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664054B (en) * | 2012-05-10 | 2014-10-01 | 深圳大学 | X-ray absorption grate manufacturing method and filling device thereof |
| CN104319630A (en) * | 2014-10-29 | 2015-01-28 | 中国科学院半导体研究所 | Method for manufacturing graphene gain coupling distributive feedback type silica based mixing laser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1372151A (en) * | 2001-02-26 | 2002-10-02 | 中国科学院半导体研究所 | Method for making plane type DFB inner grating coupling structure |
| US6707839B1 (en) * | 1999-11-26 | 2004-03-16 | Nec Corporation | Optical semiconductor device and process for producing the same |
| CN1780076A (en) * | 2004-11-25 | 2006-05-31 | 中国科学院半导体研究所 | Production of monolithic integrated device for ultrashort light impulse |
-
2006
- 2006-07-05 CN CNB2006100895905A patent/CN100468090C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6707839B1 (en) * | 1999-11-26 | 2004-03-16 | Nec Corporation | Optical semiconductor device and process for producing the same |
| CN1372151A (en) * | 2001-02-26 | 2002-10-02 | 中国科学院半导体研究所 | Method for making plane type DFB inner grating coupling structure |
| CN1780076A (en) * | 2004-11-25 | 2006-05-31 | 中国科学院半导体研究所 | Production of monolithic integrated device for ultrashort light impulse |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101101345A (en) | 2008-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100426606C (en) | Manufacturing aluminium indium gallium arsenide buried ridge waveguide laser and method using narrow plate selection epitaxial technology and method | |
| CN100546135C (en) | The manufacture method of semiconductor laser with tunable and semiconductor laser with tunable | |
| CN109412020A (en) | One kind is fallen from power type high speed semiconductor laser chip and preparation method thereof | |
| CN103259190A (en) | Annular semiconductor laser of vertical coupling structure and preparing method thereof | |
| JPH0621575A (en) | Manufacture of semiconductor device of buried heterostructure | |
| JP2003526918A (en) | Quantum well mixing | |
| CN105576502B (en) | High velocity vertical transmitting single-chip integration type directly modulates Distributed Feedback Laser and production method | |
| JPH1078518A (en) | Optical waveguide bragg reflecting lattice | |
| CN100468090C (en) | Absorption type gain-coupling distributed feedback bragg grating production method | |
| CN112162349B (en) | Suspended ridge waveguide structure and preparation method thereof | |
| CN105207055A (en) | Half-edge apodized sampling grating based on reconstruction-equivalence chirp and DFB laser | |
| CN108110613B (en) | Multi-wavelength semiconductor distributed feedback laser array and preparation method thereof | |
| US7088902B2 (en) | Photonic crystal and producing method thereof | |
| CN109449756B (en) | Semiconductor laser and preparation method thereof | |
| WO2016127675A1 (en) | Optoelectronic device and manufacturing method therefor | |
| CN111785818A (en) | GaN fundamental waveguide device based on porous lower cladding layer and preparation method and application thereof | |
| CN108400523B (en) | High-speed integrated DFB semiconductor laser chip and preparation method thereof | |
| JPH06296007A (en) | Formation method for structure of combination of optical waveguide and mirror and structure obtained thereby | |
| KR100369329B1 (en) | Fabrication method of defectless and anti-reflection spot size converted optical devices | |
| CN115275768A (en) | High-speed electric absorption modulation laser chip and preparation method thereof | |
| CN101071935A (en) | Method for preparing buried structure AlInGaAs distributed feedback laser | |
| CN110471141B (en) | Composite lattice point photonic crystal heterostructure with unidirectional high-transmission of light waves | |
| CN100435018C (en) | Structure of long wave long micro mechanical adjustable filter and producing method | |
| CN103812001A (en) | Method for preparing multi-wavelength silicon-based hybrid laser array by secondary exposure technology | |
| CN111916998A (en) | Distributed feedback laser based on W3 photonic crystal defect waveguide and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090311 Termination date: 20130705 |