CN107607133A - A kind of high-precision hall sensing device and its encapsulation programmed method - Google Patents
A kind of high-precision hall sensing device and its encapsulation programmed method Download PDFInfo
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- CN107607133A CN107607133A CN201710976344.XA CN201710976344A CN107607133A CN 107607133 A CN107607133 A CN 107607133A CN 201710976344 A CN201710976344 A CN 201710976344A CN 107607133 A CN107607133 A CN 107607133A
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 230000005611 electricity Effects 0.000 claims description 11
- 230000015556 catabolic process Effects 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 5
- 238000005266 casting Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000010076 replication Effects 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
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Abstract
The invention discloses a kind of high-precision hall sensing device and its encapsulation programmed method, its device includes shell and circuit board, circuit board is arranged in shell, include voltage conversion circuit, programmed circuit, first sensor circuit on circuit board, the input connection VDD pin pin and GND stitch of voltage conversion circuit, output end connects first sensor circuit, and first sensor circuit includes sensor U1；Programmed circuit includes fuse and diode D6, the first end connection VDD pin pin of fuse, the second end connection sensor U1 VDD pin, diode D6 plus earth, the second end of negative pole connection fuse.Circuit board is by embedding cure package in the bottom cavity of shell.After the completion of encapsulation, programmable device connection VDD pin pin and GND stitch, sensor U1 is programmed with program voltage.After programming terminates, apply backward voltage in vdd terminal, by blown fuse.This programme is applied to the chip of location sensitive.
Description
Technical field
The present invention relates to hall sensing equipment, more particularly, to a kind of high-precision hall sensing device and its encapsulation programming side
Method.
Background technology
Hall sensing equipment is that the device of corresponding detection signals is exported according to changes of magnetic field.Due to changes of magnetic field amplitude compared with
To be faint, for Hall sensor, the minor variations on any position can all make testing result that deviation occur.
The existing hall sensing device mode of production mainly has two kinds, and the first is that first chip is programmed, Ran Houfeng
Dress, this mode can make the chip after encapsulation cause position to change due to stress, obvious poor so as to be brought to testing result
It is different, reduce the degree of accuracy of detection；Another way is first to encapsulate, and is then programmed by extra programming pin, this side
Formula needs the addition programming pin beyond normal stitch, the structure of connector is changed, loses simultaneous with existing equipment
Capacitive, and program pin and zero is act as in the application in later stage, it can also increase the probability for the failures such as short circuit occur.
The content of the invention
The Hall sensor that the present invention mainly solves present in prior art can cause testing result not because of encapsulation
Accurate technical problem, there is provided one kind first encapsulates to be programmed afterwards, and chip will not produce error because of encapsulation stress, and not change
Connect the high-precision hall sensing device and its encapsulation programmed method of header structure.
The present invention is mainly what is be addressed by following technical proposals for above-mentioned technical problem：A kind of high-precision hall
Sensing device, including shell and circuit board, the circuit board are arranged in shell, and the stitch welded on circuit boards passes through connection
The through hole of bottom of chamber plate enters connecting cavity, and fluid sealant is filled with through hole, and voltage conversion circuit, programming electricity are included on the circuit board
Road, first sensor circuit, second sensor circuit and 3rd sensor circuit, the input connection of the voltage conversion circuit
VDD pin pin and GND stitch, GND stitch are ground pin, and the output end of voltage conversion circuit connects first sensor electricity respectively
Road, second sensor circuit and 3rd sensor circuit, first sensor circuit include sensor U1；The programmed circuit includes
Fuse and diode D6, the first end connection VDD pin pin of fuse, the second end connection sensor U1 of fuse VDD pin,
Diode D6 plus earth, the second end of diode D6 negative pole connection fuse.
Circuit board is encapsulated in the bottom cavity of shell by way of embedding solidification.After the completion of encapsulation, programmable device connection VDD pin
Pin and GND stitch, are programmed with program voltage to sensor U1.Now fuse converts the voltage into short circuit, programming electricity
Pressure is applied directly on sensor U1, smoothly realizes programming.After programming terminates, apply backward voltage in vdd terminal, now diode
D6 works.High current enters from GND stitch, and by being flowed out after diode D6 and fuse from VDD pin pin, fuse is melted
Disconnected, programmed circuit failure, voltage conversion circuit is come into force in normal work, and operating voltage is provided for each sensor circuit.
Preferably, the voltage conversion circuit includes electric capacity C4, electric capacity C6, electric capacity C7, resistance R3, resistance R4, resistance
R5, resistance R6, diode D1, diode D2, diode D4 and diode D5；The first end connection VDD pin pin of the electric capacity C6,
Second end passes through electric capacity C7 connection GND stitch；Diode D5 positive pole connection VDD pin pin, diode D5 negative pole pass through resistance
R3 connection diodes D2 negative pole；Diode D2 positive pole connection GND stitch；Resistance R4 first end connection diode D2's is negative
Pole, resistance R4 the second end connection diode D1 negative pole, diode D1 positive pole connection GND stitch；Electric capacity C4 and diode
D1 is in parallel；Diode D4 cathode connecting diode D1 negative pole, the second end of diode D4 negative pole connection fuse；Resistance
R5 and resistance R6 are in parallel with resistance R4.
After blown fuse, voltage conversion circuit is worked, and 12V supply voltage is converted into 5V voltages.
Preferably, first sensing circuit includes sensor U1, electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C5, electricity
Hinder R1 and resistance R2；Sensor U1 is magnetic field induction position chip, and the VDD pin of sensor are 1 pin；The first of the resistance R1
Second end of end connection fuse, resistance R1 the second end connection sensor U1 1 pin；Sensor U1 2 pin, 3 pin, 4 pin, 6
Pin and 8 pin are all grounded；Electric capacity C1 first end connection sensor U1 1 pin, the second end ground connection；Electric capacity C2 first end connection passes
Sensor U1 5 pin, the second end ground connection；Resistance R2 first end connection sensor U1 5 pin, the second end connection EPB stitch；Electric capacity
C5 first end connection EPB stitch, the second end ground connection；Electric capacity C3 first end connection sensor U1 7 pin, the second end ground connection.
The operating voltage of magnetic field induction position chip is 4.5 ~ 5.5V, program voltage 8V.Magnetic field induction position core
Piece can be the chips such as MLX90364, MLX90365, HAL82x series, HAL24xy series, HAL37xy series or ATS341.
A kind of high-precision hall sensing device encapsulates programmed method, based on foregoing high-precision hall sensing device, including
Following steps：
S01, stitch is fixed in the connecting cavity of shell by injection, stitch lower end enters bottom through the through hole of connecting cavity bottom plate
Chamber；
S02, chip and stitch and pcb board be welded and fixed；
S03, with casting glue pcb board embedding is solidificated in the bottom cavity of shell；
S04, the positive pole of programmable device is connected with VDD pin pin, negative pole is connected with GND stitch, and sensor U1 is entered by programmable device
Stroke sequence replication；
After S05, burning receive, apply the backward voltage less than GND stitch voltages, and GND stitch and VDD pin pin in VDD pin pin
Voltage difference be more than fuse breakdown voltage, blow a fuse；
S06, VDD pin pin and GND stitch and outside connection are disconnected, encapsulation and programming process terminate.
Preferably, the breakdown voltage of the fuse is 2V.
The substantial effect that the present invention is brought be can avoid encapsulating caused by stress cause Hall sensor chip position
Change is put, improves the precision of detection；By sharing VDD pin pin, avoid connection header structure caused by extra programming pin and become
Change, improve compatibility.
Brief description of the drawings
Fig. 1 is a kind of shell mechanism front view of the present invention；
Fig. 2 is a kind of shell mechanism schematic diagram of the present invention；
Fig. 3 is a kind of circuit diagram of the present invention；
In figure：1st, shell；2nd, connecting cavity；3rd, stitch；4th, bottom cavity.
Embodiment
Below by embodiment, and with reference to accompanying drawing, technical scheme is described in further detail.
Embodiment：A kind of high-precision hall sensing device of the present embodiment, including shell 1 and circuit board, the circuit board
In shell, as depicted in figs. 1 and 2, the through hole for welding stitch 3 through connecting cavity bottom plate on circuit boards enters connection
Chamber 2, fluid sealant is filled with through hole.As shown in Fig. 2 include voltage conversion circuit, programmed circuit, first sensor electricity on circuit board
Road, second sensor circuit and 3rd sensor circuit, the input connection VDD pin pin and GND pins of the voltage conversion circuit
Pin, GND stitch are ground pin, and the output end of voltage conversion circuit connects first sensor circuit, second sensor electricity respectively
Road and 3rd sensor circuit, first sensor circuit include sensor U1；The programmed circuit includes fuse and diode
D6, the first end connection VDD pin pin of fuse, the second end connection sensor U1 of fuse VDD pin, diode D6 positive pole
Ground connection, the second end of diode D6 negative pole connection fuse.
Voltage conversion circuit includes electric capacity C4, electric capacity C6, electric capacity C7, resistance R3, resistance R4, resistance R5, resistance R6, two poles
Pipe D1, diode D2, diode D4 and diode D5；The first end connection VDD pin pin of the electric capacity C6, the second end passes through electric capacity
C7 connection GND stitch；Diode D5 positive pole connection VDD pin pin, diode D5 negative pole pass through resistance R3 connection diodes D2
Negative pole；Diode D2 positive pole connection GND stitch；Resistance R4 first end connection diode D2 negative pole, the of resistance R4
Two ends connection diode D1 negative pole, diode D1 positive pole connection GND stitch；Electric capacity C4 and diode D1 is in parallel；Diode
D4 cathode connecting diode D1 negative pole, the second end of diode D4 negative pole connection fuse；Resistance R5 and resistance R6 are
It is in parallel with resistance R4.
First sensing circuit includes sensor U1, electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C5, resistance R1 and resistance R2；
Sensor U1 is magnetic field induction position chip MLX90365, and the VDD pin of sensor are 1 pin；The first end of the resistance R1 connects
Connect the second end of fuse, resistance R1 the second end connection sensor U1 1 pin；Sensor U1 2 pin, 3 pin, 4 pin, 6 pin and 8
Pin is all grounded；Electric capacity C1 first end connection sensor U1 1 pin, the second end ground connection；Electric capacity C2 first end connection sensor
U1 5 pin, the second end ground connection；Resistance R2 first end connection sensor U1 5 pin, the second end connection EPB stitch；Electric capacity C5's
First end connects EPB stitch, the second end ground connection；Electric capacity C3 first end connection sensor U1 7 pin, the second end ground connection.
A kind of high-precision hall sensing device encapsulates programmed method, based on foregoing high-precision hall sensing device, including
Following steps：
S01, stitch is fixed in the connecting cavity of shell by injection, stitch lower end enters bottom through the through hole of connecting cavity bottom plate
Chamber 4；
S02, chip and stitch and pcb board be welded and fixed；
S03, with casting glue pcb board embedding is solidificated in the bottom cavity of shell；
S04, the positive pole of programmable device is connected with VDD pin pin, negative pole is connected with GND stitch, and sensor U1 is entered by programmable device
Stroke sequence replication；
After S05, burning receive, apply the backward voltage less than GND stitch voltages, and GND stitch and VDD pin pin in VDD pin pin
Voltage difference be more than fuse breakdown voltage, blow a fuse；
S06, VDD pin pin and GND stitch and outside connection are disconnected, encapsulation and programming process terminate.
The breakdown voltage of fuse is 2V.
Stitch includes VDD（Power supply）Stitch, GND（Ground）Stitch, EPB stitch, CTS stitch and CBS stitch, EPB stitch,
CTS stitch and CBS stitch are output signal stitch.
Programmable sensor chip MLX90365 operating voltages are 4.5 ~ 5.5V, program voltage 8V, product supply voltage
For 12V.To enable chip normal work, it is necessary to which a voltage conversion circuit is by 12V supply voltages（VDD in Fig. 2）Be converted to 5V
Voltage（V0-P in Fig. 2）.And chip needs to program, programmable device is by chip voltage during programming（V0-P）It is raised to 8V.If it will compile
Journey device is connected to vdd terminal, and due to the effect of voltage conversion circuit, V0-P magnitude of voltage is 5V all the time, can not realize programming.
It is to connect a stitch in addition to be connected to V0-P ends dedicated for programming or before packaging entering for this existing settling mode
Row programming.Programming only needs in product export, and normal use all takes less than afterwards, and the standard of a more stitch and user terminal
Plug is also mismatched, and deviation of signal after causing to encapsulate is programmed before encapsulating.
The present embodiment between vdd terminal and V0-P by adding a fuse, V0-P and a backward dioded group indirectly on ground
Into programmed circuit, the voltage matches of programming module and chip module are realized.During programming, programmable device is connected on vdd terminal, due to fuse
Short circuit is converted the voltage into, is allowed to not work, the 8V voltages for being added in vdd terminal can be directly to V0-P realization programmings.It is to be programmed
Terminate, in vdd terminal plus backward voltage, now diode works, and high current by diode D6 flows through fuse, and its is molten disconnected,
Programmed circuit does not work afterwards.
Resistance, electric capacity, diode, regulator tube group realize the electricity of client's output module and chip module into voltage conversion circuit
Pressure matching.Worked after blown fuse, during normal work.
Carried out after being programmed in encapsulation, can avoid encapsulating caused by stress cause Hall sensor chip change in location,
Improve the precision of detection.By sharing VDD pin pin, connector structure change caused by extra programming pin is avoided, is improved
Compatibility.
Specific embodiment described herein is only to spirit explanation for example of the invention.Technology belonging to the present invention is led
The technical staff in domain can be made various modifications or supplement to described specific embodiment or be replaced using similar mode
Generation, but without departing from the spiritual of the present invention or surmount scope defined in appended claims.
Although more having used the terms such as embedding, shell, sensor herein, be not precluded from using other terms can
Can property.It is used for the purpose of more easily describing and explaining the essence of the present invention using these terms；It is construed as any one
The additional limitation of kind is all disagreed with spirit of the present invention.
Claims (5)
1. a kind of high-precision hall sensing device, it is characterised in that including shell and circuit board, the circuit board is arranged on shell
Interior, the through hole for welding stitch through connecting cavity bottom plate on circuit boards enters connecting cavity, and fluid sealant, the electricity are filled with through hole
Include voltage conversion circuit, programmed circuit, first sensor circuit, second sensor circuit and 3rd sensor electricity on the plate of road
Road, the input connection VDD pin pin and GND stitch of the voltage conversion circuit, GND stitch is ground pin, and voltage conversion is electric
The output end on road connects first sensor circuit, second sensor circuit and 3rd sensor circuit, first sensor electricity respectively
Road includes sensor U1；The programmed circuit includes fuse and diode D6, the first end connection VDD pin pin of fuse, protects
The second end connection sensor U1 of dangerous silk VDD pin, diode D6 plus earth, diode D6 negative pole connection fuse
Second end.
A kind of 2. high-precision hall sensing device according to claim 1, it is characterised in that the voltage conversion circuit bag
Include electric capacity C4, electric capacity C6, electric capacity C7, resistance R3, resistance R4, resistance R5, resistance R6, diode D1, diode D2, diode D4
With diode D5；The first end connection VDD pin pin of the electric capacity C6, the second end passes through electric capacity C7 connection GND stitch；Diode D5
Positive pole connection VDD pin pin, the negative pole that diode D5 negative pole passes through resistance R3 connection diodes D2；Diode D2 positive pole connects
Connect GND stitch；Resistance R4 first end connection diode D2 negative pole, resistance R4 the second end connection diode D1 negative pole,
Diode D1 positive pole connection GND stitch；Electric capacity C4 and diode D1 is in parallel；Diode D4 cathode connecting diode D1's is negative
Pole, the second end of diode D4 negative pole connection fuse；Resistance R5 and resistance R6 are in parallel with resistance R4.
A kind of 3. high-precision hall sensing device according to claim 1 or 2, it is characterised in that the first sensing electricity
Road includes sensor U1, electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C5, resistance R1 and resistance R2；Sensor U1 is magnetic field induction
Formula position chip, the VDD pin of sensor are 1 pin；Second end of the first end connection fuse of the resistance R1, the of resistance R1
Two ends connection sensor U1 1 pin；Sensor U1 2 pin, 3 pin, 4 pin, 6 pin and 8 pin are all grounded；Electric capacity C1 first end connection
Sensor U1 1 pin, the second end ground connection；Electric capacity C2 first end connection sensor U1 5 pin, the second end ground connection；Resistance R2's
First end connection sensor U1 5 pin, the second end connection EPB stitch；Electric capacity C5 first end connection EPB stitch, the second termination
Ground；Electric capacity C3 first end connection sensor U1 7 pin, the second end ground connection.
4. a kind of high-precision hall sensing device encapsulates programmed method, dress is sensed based on the high-precision hall described in claim 1
Put, it is characterised in that comprise the following steps：
S01, stitch is fixed in the connecting cavity of shell by injection, stitch lower end enters bottom through the through hole of connecting cavity bottom plate
Chamber；
S02, chip and stitch and pcb board be welded and fixed；
S03, with casting glue pcb board embedding is solidificated in the bottom cavity of shell；
S04, the positive pole of programmable device is connected with VDD pin pin, negative pole is connected with GND stitch, and sensor U1 is entered by programmable device
Stroke sequence replication；
After S05, burning receive, apply the backward voltage less than GND stitch voltages, and GND stitch and VDD pin pin in VDD pin pin
Voltage difference be more than fuse breakdown voltage, blow a fuse；
S06, VDD pin pin and GND stitch and outside connection are disconnected, encapsulation and programming process terminate.
A kind of 5. high-precision hall sensing device encapsulation programmed method according to claim 4, it is characterised in that the guarantor
The breakdown voltage of dangerous silk is 2V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710976344.XA CN107607133B (en) | 2017-10-19 | 2017-10-19 | High-precision Hall sensing device and packaging programming method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710976344.XA CN107607133B (en) | 2017-10-19 | 2017-10-19 | High-precision Hall sensing device and packaging programming method thereof |
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| Publication Number | Publication Date |
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| CN107607133A true CN107607133A (en) | 2018-01-19 |
| CN107607133B CN107607133B (en) | 2023-10-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115389912A (en) * | 2022-08-26 | 2022-11-25 | 无锡众享科技有限公司 | OTP MCU chip detection device and detection method |
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| CN1518743A (en) * | 2001-06-20 | 2004-08-04 | �ʼҷ����ֵ�������˾ | Method for characterizing active track and latch sense-amp (comparator) in one time programmable (OTP) salicided poly fuse array |
| CN1734761A (en) * | 2004-08-04 | 2006-02-15 | 台湾积体电路制造股份有限公司 | Fuse circuit and electrical fuse circuit with electrostatic discharge (ESD) protection |
| US20120044738A1 (en) * | 2010-08-20 | 2012-02-23 | Chung Shine C | One-time programmable memories using polysilicon diodes as program selectors |
| CN102735362A (en) * | 2012-06-20 | 2012-10-17 | 北京遥测技术研究所 | Astronautic programmable thermocouple temperature transmitter |
| CN207248200U (en) * | 2017-10-19 | 2018-04-17 | 浙江沃得尔科技股份有限公司 | A kind of high-precision hall sensing device |
-
2017
- 2017-10-19 CN CN201710976344.XA patent/CN107607133B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1518743A (en) * | 2001-06-20 | 2004-08-04 | �ʼҷ����ֵ�������˾ | Method for characterizing active track and latch sense-amp (comparator) in one time programmable (OTP) salicided poly fuse array |
| CN1734761A (en) * | 2004-08-04 | 2006-02-15 | 台湾积体电路制造股份有限公司 | Fuse circuit and electrical fuse circuit with electrostatic discharge (ESD) protection |
| US20120044738A1 (en) * | 2010-08-20 | 2012-02-23 | Chung Shine C | One-time programmable memories using polysilicon diodes as program selectors |
| CN102735362A (en) * | 2012-06-20 | 2012-10-17 | 北京遥测技术研究所 | Astronautic programmable thermocouple temperature transmitter |
| CN207248200U (en) * | 2017-10-19 | 2018-04-17 | 浙江沃得尔科技股份有限公司 | A kind of high-precision hall sensing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115389912A (en) * | 2022-08-26 | 2022-11-25 | 无锡众享科技有限公司 | OTP MCU chip detection device and detection method |
| CN115389912B (en) * | 2022-08-26 | 2023-08-29 | 无锡众享科技有限公司 | OTP MCU chip detection device and detection method |
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| CN107607133B (en) | 2023-10-31 |
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Effective date of registration: 20240409 Address after: No. 201, 2nd Floor, Building 4, No. 818, East Section of Kaifa Avenue, Haihong Street, Taizhou Bay New Area, Taizhou City, Zhejiang Province, 318014 Patentee after: Zhejiang Walder Electronics Co.,Ltd. Country or region after: China Address before: 318000 1st floor, building 1, No. 818, east section of Kaifa Avenue, Jiaojiang District, Taizhou City, Zhejiang Province Patentee before: Zhejiang Woder Technology Group Co.,Ltd. Country or region before: China |
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