CN107591374A - Sensor encapsulating structure - Google Patents
Sensor encapsulating structure Download PDFInfo
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- CN107591374A CN107591374A CN201610868068.0A CN201610868068A CN107591374A CN 107591374 A CN107591374 A CN 107591374A CN 201610868068 A CN201610868068 A CN 201610868068A CN 107591374 A CN107591374 A CN 107591374A
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- adhesive body
- sensor chip
- encapsulating structure
- sensor
- bonding layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Pressure Sensors (AREA)
Abstract
A kind of sensor encapsulating structure, including：Substrate, the sensor chip for being arranged at aforesaid substrate, the more metal lines for being electrically connected with aforesaid substrate and sensor chip, position correspondence in sensor chip photic zone, photic zone can be made stably cemented in the bonding layer and adhesive body of sensor chip.Sensor chip top surface away from substrate includes sensing area and the spacer region around sensing area, and sensor chip between at least part edge and spacer region of top surface formed with multiple connection gaskets.Connection gasket is connected to per metal line one end, the other end is connected to the weld pad of substrate.The photic zone leaves fixed area in gluing on the outside of the position of the bonding layer, and adhesive body cladding surveys chip lateral border, bonding layer lateral border and the photic zone lateral border and fixed area, and is embedded in respectively in bonding layer and adhesive body per metal line.Whereby, above-mentioned sensor encapsulating structure can be applicable to encapsulate the sensor chip of reduced size.
Description
Technical field
The present invention is to be related to a kind of encapsulating structure, and further relates to a kind of sensor encapsulating structure.
Background technology
Electronic component in existing electronic installation needs to research and develop towards the direction of size reduction, so that electronic installation can be
More electronic components are installed in limited space.However, existing sensor encapsulating structure (such as：CIS encapsulation knot
Structure) development faced the problem of being difficult to continue to zoom out size, and one of them main reason is that, existing sensor encapsulation knot
Structure is not appropriate for the encapsulation for carrying out reduced size sensor chip.
Then, inventors believe that drawbacks described above can improve, concentrate on studies and coordinate the utilization of scientific principle, propose finally a kind of
The present invention that is reasonable in design and being effectively improved drawbacks described above.
The content of the invention
The embodiment of the present invention is to provide a kind of sensor encapsulating structure, by being different from conventional construction and can be effectively
Improve the incident problem of existing sensor encapsulating structure institute.
The embodiment of the present invention discloses a kind of sensor encapsulating structure, it is characterised in that the sensor encapsulating structure includes：
One substrate, the substrate is included positioned at a upper surface of two opposite sides and a lower surface, and the substrate is in the upper surface
Formed with multiple weld pads；One sensor chip, the sensor chip includes the top surface and a bottom surface positioned at two opposite sides, described
The bottom surface of sensor chip is arranged at the upper surface of the substrate, the top surface include a sensing area and around
One spacer region of the sensing area；Wherein, the sensor chip at least part edge of the top surface and the spacer region it
Between formed with multiple connection gaskets；More metal lines, one end of a plurality of metal wire are connected to multiple weld pads, and
The other end of a plurality of metal wire is connected to multiple connection gaskets；One bonding layer, the bonding layer are arranged at least
On the top surface position between the part edge and the spacer region, and described connect is partially embedded in per metal line
Close in layer；One photic zone, the photic zone have the first surface and a second surface positioned at two opposite sides, the photic zone
The second surface gluing in the bonding layer, and the second surface in gluing in the outside at the position of the bonding layer
Leave a fixed area；Wherein, the sensor chip orthographic projection is in the second surface and formed with a view field, the projection
Region is in the profile of the second surface；And an adhesive body, the adhesive body be arranged at the substrate it is described on
Surface simultaneously coats the sensor chip lateral border, the bonding layer lateral border and the photic zone lateral border and the fixed area,
And the part of every metal wire and each weld pad are all embedded in the adhesive body.
Preferably, the adhesive body is further defined to a liquid packing colloid, and described euphotic described first
Surface is with the adjacent adhesive body surface formed with more than 90 degree and less than or equal to an angle of 180 degree.
Preferably, the angle is between 115 degree to 150 degree.
Preferably, the sensor encapsulating structure further comprises there is be arranged at the adhesive body apical margin one molding glue
Body, it is described molding colloid top surface be set in parallel with the adjacent first surface, it is described molding colloid side surface and
The lateral margin of the adjacent adhesive body is set in copline.
Preferably, the adhesive body is further defined to a molding colloid, and the euphotic first surface
With an adjacent angle of the adhesive body surface formed with 180 degree.
Preferably, every metal wire includes the summit being embedded in the adhesive body.
Preferably, the adjacent regions of the top surface of the sensor chip and every metal wire formed with less than or equal to
45 degree of an angle.
Preferably, the euphotic lateral border is stepped and is embedded in the adhesive body.
Preferably, the area of the first surface is less than the area of the second surface.
Preferably, the distance between the euphotic lateral border and the adjacent adhesive body lateral margin are 300 μm
~500 μm, the ultimate range between any one described weld pad outer rim of the substrate and the adjacent sensor chip lateral border
For 200 μm~350 μm, the sensor chip lateral border of any one weld pad and the adjacent adhesive body lateral margin are adjacent to
The distance between be 225 μm~425 μm.
In summary, sensor encapsulating structure disclosed in this invention, can be connect by the way that the part of metal wire is embedded in
Close in layer, and the sensor chip for making it be beneficial to after size reduction.
For the enabled feature and technology contents for being further understood that the present invention, refer to below in connection with the present invention specifically
Bright and accompanying drawing, but these explanations are only used for illustrating the present invention with institute's accompanying drawings, rather than protection scope of the present invention is made any
Limitation.
Brief description of the drawings
Fig. 1 is the schematic cross-sectional view of sensor encapsulating structure embodiment one of the present invention.
The schematic top plan view (omitting adhesive body, photic zone, metal wire) that Fig. 2 is Fig. 1.
Fig. 3 is Fig. 1 schematic top plan view (omission adhesive body).
Fig. 4 is Fig. 1 another schematic top plan view (omission adhesive body).
Fig. 5 A are Fig. 1 a-quadrant close-up schematic view.
Fig. 5 B are Fig. 5 A change aspect schematic diagram.
Fig. 6 is Fig. 1 B area close-up schematic view.
Fig. 7 is the schematic cross-sectional view of Fig. 1 change type.
Fig. 8 is the schematic cross-sectional view of Fig. 1 another change type.
Fig. 9 is the schematic cross-sectional view of Fig. 1 another change type.
Figure 10 is the schematic cross-sectional view of sensor encapsulating structure embodiment two of the present invention.
Figure 11 is the schematic top plan view of sensor encapsulating structure embodiment three of the present invention.
Figure 12 is the schematic cross-sectional view along Figure 11-X II of hatching line X II.
Embodiment
[embodiment one]
Fig. 1 to Fig. 9 is referred to, it is embodiments of the invention one, need to first be illustrated, the present embodiment correspondence pattern is carried
And correlated measure and external form, only be used for specifically describe embodiments of the present invention, in order to understand the present invention, rather than be used for
Limit to protection scope of the present invention.
As depicted in figs. 1 and 2, the present embodiment discloses a kind of sensor encapsulating structure 100, refers in particular to a kind of image sensing
Device encapsulating structure 100, but the present invention is not only restricted to this.The sensor encapsulating structure 100 includes：One substrate 1, be arranged at it is above-mentioned
One sensor chip 2 of substrate 1, make aforesaid substrate 1 and sensor chip 2 establish the more metal lines 3 being electrically connected with, position correspondence in
One photic zone 4 of sensor chip 2 and photic zone 4 can be made stably cemented in a gluing body 5 of sensor chip 2 and substrate 1.With
It is lower to construct each component introduced respectively in sensor encapsulating structure 100, and illustrate the annexation between component in good time.
As depicted in figs. 1 and 2, the substrate 1 can be plastic base, ceramic substrate, lead frame (lead frame) or
It is other board-like materials, the present embodiment is not any limitation as to this.Wherein, aforesaid substrate 1 includes the upper table positioned at two opposite sides
Face 11 and a lower surface 12, and the substrate 1 in upper surface 11 formed with spaced multiple weld pads 111.It is furthermore described
Substrate is also formed with multiple weld pads (not indicating) in lower surface 12, so as to for more solder spheres (not indicating) are respectively welded.
That is the substrate 1 of the present embodiment is said with possessing the construction of BGA Package (Ball Grid Array, BGA) work one
It is bright, but it is not only restricted to this.
As depicted in figs. 1 and 2, the sensor chip 2 is described with image sensing chip in the present embodiment, but this
Embodiment is not any limitation as to the type of sensor chip 2.Wherein, the sensor chip 2 includes positioned at a top of two opposite sides
The bottom surface 22 of face 21 and one and the lateral border 23 for being vertically connected in top surface 21 and bottom surface 22.The top surface 21 includes a sense
Survey area 211 and the spacer region 212 around above-mentioned sensing area 211.The sensing area 211 is in the present embodiment substantially in side
Shape is (such as：Square or rectangular), and the center of sensing area 211 can be center (such as Fig. 4) or and the top surface of top surface 21
Leave a distance (such as Fig. 2 and Fig. 3) in 21 centers.It is in square ring-type that the spacer region 212 is then in the present embodiment, and spacer region
The width at 212 each position is roughly the same, but the specific external form of spacer region 212 can be according to the demand of designer or producer
And adjusted, it is not any limitation as herein.
Further say, the top surface 21 has at least a first edge 213 and an at least second edge 214, and described
Lateral border 23 includes at least one side 231 for being connected at least one second edge 214.Above-mentioned first edge 213 and interval
The distance D1 (such as Fig. 6) in area 212 is more than the second edge 214 and the distance D2 (such as Fig. 5 A) of spacer region 212.And in this implementation
In example, the second edge 214 and first edges 213 and sensing area 211 of the distance D2 of sensing area 211 less than 1/3 to 1/4
Distance D1 (D2<1/3~1/4D1), but above-mentioned distance D2 and distance D1 Proportionality design can be according to designer or producers
Demand and adjusted, be not any limitation as herein.The sensor chip 2 top surface 21 first edge 213 and spacer region 212 it
Between formed with multiple connection gaskets 215, and any connection gasket 215 is formed without between second edge 214 and spacer region 212.
Wherein, the top surface 21 can include multiple first edges 213 and single second edge 214 (such as Fig. 3), more
Individual first edge 213 and multiple second edges 214 (such as Fig. 4) or single first edge 213 and multiple second edges 214 (figure
Not shown in), it is not any limitation as herein.That is, Fig. 1 equivalent to the IA-IA hatching lines along Fig. 3 schematic cross-sectional view or
Equivalent to the schematic cross-sectional view of the IB-IB hatching lines along Fig. 4.
Furthermore the sensor chip 2 is the upper surface 11 that substrate 1 is arranged at bottom surface 22, and is provided with above-mentioned sensing
The position of 1 upper surface of substrate 11 of chip 2 is located substantially within the region that the multiple weld pad 111 surrounds.Wherein, the present embodiment
In sensor chip 2 be by stick brilliant glue (Die Attach Epoxy, do not indicate) the upper of substrate 1 is fixed in its bottom surface 22
Surface 11, but specific set-up mode is not only restricted to this.
As depicted in figs. 1 and 2, one end of more metal lines 3 is connected to multiple weld pads 111 of substrate 1, and
The other end of more metal lines 3 is connected to multiple connection gaskets 215 of sensor chip 2.Wherein, every metal of the present embodiment
Line 3 be by it is counter beat (reverse bond) in a manner of formed, so the top surface 21 of above-mentioned sensor chip 2 with per metal line 3
Adjacent regions can be formed with the angle less than or equal to 45 degree (positioned at the position of metal wire 3 of the top of top surface 21 in such as Fig. 1)
(not indicating) so that summit 31 per metal line 3 can position in relatively low height and position, and then avoid touching photic zone 4,
But the present invention is not only restricted to this.For example, above-mentioned angle can also be less than being equal to 30 degree.
As depicted in figs. 1 and 2, the photic zone 4 is described with flat glass in the present embodiment, but this reality
Example is applied not to be any limitation as the type of photic zone 4.Wherein, the photic zone 4 has the first surface 41 positioned at two opposite sides
It is connected in a second surface 42 and vertically a lateral border 43 of first surface 41 and second surface 42.The of the present embodiment
One surface 41 is that size identical is square (such as with second surface 42：Square or rectangular), and the second of the photic zone 4
The area of surface 42 is more than the area of top surface 21 of above-mentioned sensor chip 2, but is not only restricted to this.
Furthermore the photic zone 4 is fixed on substrate 1 and sensor chip 2, and the second of photic zone 4 by gluing body 5
Surface 42 is top surface 21 that is almost parallel and being intended for the sensor chip 2.Further say, the orthographic projection of sensor chip 2
(do not indicated) formed with a view field in second surface 42, and the view field is the profile positioned at second surface 42
It is interior.Set but not in contact with every metal line 3 in addition, the second surface 42 of above-mentioned photic zone 4 is preferably neighbour, and per metal line 3
Summit 31 be position in the outside in the space that photic zone 4 is formed towards the orthographic projection of substrate 1, the phase of summit 31 per metal line 3
Height H1 (such as Fig. 6) compared with the top surface 21 of sensor chip 2 is preferably less than the second surface 42 of photic zone 4 compared to sensing core
The height H2 (such as Fig. 6) of the top surface 21 of piece 2, but it is not only restricted to this.
Such as Fig. 1, Fig. 5 A and Fig. 6, the gluing body 5 can be the solid memder of phase same material or by various material institute
The composite component of composition, the present embodiment are not any limitation as to the type of gluing body 5.Wherein, the gluing body 5 is arranged at substrate 1
Upper surface and coat the top surface 21 between the above-mentioned lateral border 23 of sensor chip 2, the first edge 213 and spacer region 212
Position and the lateral border 43 of the photic zone 4 and portion second surface 42.At least part and each weld pad 111 per metal line 3 are all
It is embedded in above-mentioned gluing body 5.
In more detail, the gluing body 5 of the present embodiment include be connected to each other a supporting layer 51, a bonding layer 52 and
One adhesive body 53, but the present invention is not only restricted to this.Wherein, the supporting layer 51 is preferably identical material (such as with bonding layer 52：
Glass engages resin, Glass Mount Epoxy), but it is different from the material of adhesive body 53 (such as：Liquid packing colloid, liquid
compound).It is following to introduce the annexation of supporting layer 51, bonding layer 52 and adhesive body 53 relative to other components respectively.
Such as Fig. 2 and Fig. 5 A, the external form of supporting layer 51 and forming position in the present embodiment are to be relevant to the top surface of sensor chip 2
21 second edges 214.For example, the supporting layer 51 shown in Fig. 3 is the single strip structure for being roughly parallel to second edge 214
Make, the supporting layer 51 shown in Fig. 4 is then two strip columnar structures for being roughly parallel to second edge 214.Wherein, the supporting layer
51 be to be adjacent to by the second edge 214 of sensor chip 2 (such as：Supporting layer 51 is connected in sensor chip 2 and second edge 214
Connected side 231), and away from aforesaid substrate 1 the ora terminalis of supporting layer 51 (apical margin of supporting layer 51 in such as Fig. 5 A) substantially with
The top surface 21 (or second edge 214) of sensor chip 2 is contour.
Further say, the lateral border 511 of the supporting layer 51 includes an arcuate flanks 511, and above-mentioned curved side
The arc core (not indicating) in face 511 is located at the inner side of adhesive body 53 (such as：Arc core is located in supporting layer 51), but it is not only restricted to this.Lift
For example, as shown in Figure 5 B, the arc core (not indicating) of the arcuate flanks 511 can also be located at adhesive body 53.
Such as Fig. 2, Fig. 5 A and Fig. 6, the bonding layer 52 is in substantially square ring-type, and the annular inner rim of bonding layer 52 is preferable
It is the outer rim of spacer region 212 for being connected on sensor chip 2.That is, the spacer region 212 is to separate bonding layer 52 and sensing
Area 211 makes a reservation for the region retained.Wherein, the bonding layer 52 be disposed on above-mentioned supporting layer 51 and first edge 213 with
On the position of top surface 21 between spacer region 212, and the position of the bonding layer 52 (such as Fig. 5 A) being arranged on supporting layer 51 can
It is further disposed upon on the position of top surface 21 between second edge 214 and spacer region 212.Wherein, above-mentioned second edge 214 and
The area at the position of top surface 21 between septal area 212 is preferably the area less than its position of spacer region 212 being connected.Change an angle
For, in the embodiment that one does not illustrate, when the position of the bonding layer 52 being arranged on supporting layer 51 is not arranged at sensing
During the top surface 21 of chip 2, the second edge 214 of the top surface 21 is equivalent to falling in the outer rim of spacer region 212.
Further say, the width and height at the position of the bonding layer 52 (such as Fig. 5 A) being arranged on supporting layer 51 are substantially
The position of the bonding layer 52 (such as Fig. 6) of the equivalent setting on the position of top surface 21 between first edge 213 and spacer region 212
Width and height.The lateral border 521 of the bonding layer 52 includes an arc-shaped curved surface 521, and the arc of the arc-shaped curved surface 521
The heart is located at adhesive body 53.The arc-shaped curved surface 521 of the bonding layer 52 is preferably with the ultimate range D3 (such as Fig. 5 A) of sensing area 211
It is substantially equal to the distance D4 (such as Fig. 6) of the first edge 213 and sensing area 211.Wherein, perpendicular to the upper table of substrate 1
On the section of sensor encapsulating structure 100 (such as Fig. 5 A) in face 11, the arcuate flanks 511 of the supporting layer 51 and above-mentioned bonding layer 52
Arc-shaped curved surface 521 connect and form sigmoid curve, but the present invention is not limited (such as Fig. 5 B).
Furthermore being partially embedded in per metal line 3 in the bonding layer 52, that is to say, that each connection gasket 215 and its
The localized metallic line 3 connected is embedded in bonding layer 52 in the present embodiment.But in the embodiment that one does not illustrate, institute
The localized metallic line 3 stated connection gasket 215 and its connected can need not be embedded in bonding layer 52.
In addition, such as Fig. 1, the gluing of second surface 42 of the photic zone 4 is in bonding layer 52, so that the second surface of photic zone 4
42nd, the top surface 21 of bonding layer 52 and sensor chip 2 is surrounded formed with a closing space 6 jointly, and the sensing area of sensor chip 2
211 in above-mentioned closing space 6.Wherein, the second surface 42 leaves in gluing on the outside of the position of bonding layer 52 is in
A Fang Huanzhuan fixed area 421.
Such as Fig. 1, Fig. 5 A and Fig. 6, the adhesive body 53 is arranged at the upper surface 11 of substrate 1 and coats the sensor chip 2
Lateral border 23, the lateral border 511 of supporting layer 51, the lateral border 521 of bonding layer 52 and the lateral border 43 of photic zone 4 and fixed area 421.And
At least part and each weld pad 111 per metal line 3 are all embedded in the adhesive body 53.Wherein, every of the present embodiment
Metal wire 3 is to be embedded in adhesive body 53 and bonding layer 52 respectively, and the summit 31 per metal line 3 is to be embedded in adhesive body
53.But in the embodiment that one does not illustrate, it can also be completely embedded in the adhesive body 53 per metal line 3.
In more detail, the first surface 41 of the photic zone 4 and the adjacent surface of the adhesive body 53 (sealing in such as Fig. 1
The apical margin of body 53) formed with more than 90 degree and less than or equal to an angle of 180 degreeThe angleIt is preferably between 115 degree extremely
150 degree.And the lateral margin of adhesive body 53 is then substantially trimmed in the lateral margin of substrate 1.Wherein, though the adhesive body 53 in the present embodiment is
Explained with being not attached to the first surface 41 of photic zone 4, but the present invention is not excluded for adhesive body 53 and is attached to above-mentioned photic zone 4
Local first surface 41 is (such as：The outer rim position of first surface 41).
In summary, the sensor encapsulating structure 100 disclosed in the present embodiment, the edge of top surface 21 can be applied to (such as：The
Two edges 214) sensor chip 2 of connection gasket 215 is not provided between sensing area 211, after being reduced beneficial to package dimension
Sensor chip 2.And the sensor encapsulating structure 100 can also by the way that the part of metal wire 3 is embedded in bonding layer 52,
And it is set to be beneficial to the sensor chip 2 after package dimension reduces.
Furthermore the adhesive body 53 is by gluing in the arcuate flanks 511 of supporting layer 51 and the arc-shaped curved surface of bonding layer 52
521 and lateral border 43 and the fixed area 421 of photic zone 4, so that photic zone 4 is more firmly arranged on predetermined position,
And then photic zone 4 is kept not contacting metal line 3, reach the requirement that photic zone 4 is roughly parallel to the top surface 21 of sensor chip 2, borrow
So that sensor encapsulating structure 100 has preferable reliability.
Also, the supporting layer 51 is first with a flow manufacturing, then above-mentioned bonding layer 52 is again with another flow system
Make, so the reduced position of sensor chip 2 can be filled up by supporting layer 51 (such as：Sensing area 211 and second edge 214 it
Between position), so as to providing bonding layer 52 enough installation space, and bonding layer 52 can be avoided to be connect across spacer region 212
Touch on sensing area 211.
In addition, the sensor encapsulating structure 100 disclosed in the present embodiment Fig. 1 to Fig. 6 also can be according to the demand of designer
And adjusted, but because the change type of the present embodiment sensor encapsulating structure 100 is excessive, can not pass through accompanying drawing mode one by one
It is open, so following change types for only enumerating section senses device encapsulating structure 100.
As shown in fig. 7, the lateral border 43 of the photic zone 4 is stepped and is embedded in the adhesive body 53, and institute
The area for stating the first surface 41 of photic zone 4 is less than the area of second surface 42.However, in an embodiment not illustrated, no
The area for excluding above-mentioned first surface 41 is more than the area of second surface 42.
As shown in figure 8, the gluing body 5 of the sensor encapsulating structure 100 can further comprise there is a molding colloid 54
(molding compound).Wherein, above-mentioned molding colloid 54 is arranged at the apical margin of the adhesive body 53, and moulds colloid 54
Top surface be substantially set in parallel with the adjacent first surface 41 of photic zone 4, and it is described molding colloid 54 side surface then with
The lateral margin of adjacent adhesive body 53 is set in copline, but is not only restricted to this.Furthermore the top surface and phase of the molding colloid 54
The adjacent first surface 41 of photic zone 4 can also substantially be set in copline, but the present invention is not only restricted to this.
As shown in figure 9, the adhesive body 53 can be a molding colloid 54, and the first surface 41 of the photic zone 4
Substantially it is set in parallel with the adjacent surface of adhesive body 53, preferably forms the angle of substantially 180 degree
[embodiment two]
Referring to Fig. 10, it is embodiments of the invention two, the present embodiment is similar with above-described embodiment one, mutually exists together then not
It is repeated here again, and both difference essentially consists in：The bonding layer 52 of above-described embodiment one can be with the present embodiment with supporting layer 51
The first bonding layer 55 substitute with the second bonding layer 56, that is to say, that the supporting layer 51 of embodiment one and what is be arranged on connect
Layer 52 position is closed (such as Fig. 5 A) in the present embodiment to change manufactured by a flow and to be defined as the second bonding layer 56, and embodiment
Remaining position (such as Fig. 6) of one bonding layer 52 in the present embodiment if change manufactured by another flow and to be defined as the first engagement
Layer 55, but the present invention is not only restricted to this.For the present embodiment compared to the concrete structure difference of embodiment one, general description is as follows.
First bonding layer 55 is arranged on the position of the top surface 21 between first edge 213 and spacer region 212, institute
The second bonding layer 56 is stated to be arranged at the upper surface 11 of the substrate 1 and be adjacent to the side of second edge 214 of sensor chip 2 (such as：
Second bonding layer 56 is connected to the side 231 of sensor chip 2).Wherein, second bonding layer 56 can be further disposed upon second
On the position of the top surface 21 between edge 214 and spacer region 212, and between the second edge 214 and spacer region 212
The area at the position of top surface 21 is less than the area at its position of spacer region 212 being connected.And the apical margin of the second bonding layer 56 is compared
Height in the upper surface 11 of substrate 1 is substantially identical to height of the apical margin of the first bonding layer 55 compared to the upper surface 11 of substrate 1
Degree.
Furthermore the ultimate range of the lateral border 561 of the first half block of the second bonding layer 56 and sensing area 211 is substantially etc.
In the first edge 213 and the distance of sensing area 211.The lateral border 551 of first bonding layer 55 includes a curved side
Face 551, and the arc core of the arcuate flanks 551 is located at adhesive body 53.In the sensor perpendicular to the upper surface 11 of substrate 1
On the section of encapsulating structure 100, the S-shaped curve of lateral border of second bonding layer 56, but it is not only restricted to this (such as Fig. 5 B).
The gluing of second surface 42 of the photic zone 4 is in the first bonding layer 55 and the second bonding layer 56；And described second
Fixed area 421 is left on the outside of the position of the above-mentioned bonding layer 56 of first bonding layer 55 and second in surface 42 in gluing.
The adhesive body 53 is arranged at the upper surface 11 of the substrate 1 and coats the lateral border 23, first of sensor chip 2
The lateral border 551 of bonding layer 55, the lateral border 561 of the second bonding layer 56 and the lateral border 43 of the photic zone 4 and fixed area 421, and it is every
The part of metal line 3 and each weld pad 111 are all embedded in the adhesive body 53.
[embodiment three]
Figure 11 and Figure 12 are referred to, it is embodiments of the invention three, and the present embodiment is similar with above-described embodiment one, identical
Place is then not repeated here, and both difference essentially consists in：The sensor encapsulating structure 100 of the present embodiment, which need not can be provided with, appoints
What supporting layer 51, that is to say, that the edge of the top surface 21 of sensor chip 2 of the present embodiment is all first edge 213.
Need additional description, the size of the sensor encapsulating structure 100 of above three embodiment at many positions all can
It is enough reduced, for example, as shown in figure 12, between the lateral border 43 of the photic zone 4 and the adjacent lateral margin of adhesive body 53
Substantially 300 μm~500 μm of distance D5, any one outer rim of weld pad 111 of the substrate 1 and the adjacent lateral border of sensor chip 2
Substantially 200 μm~350 μm of ultimate range D6 between 23, be adjacent to the lateral border 23 of sensor chip 2 of any one weld pad 111 with
Substantially 225 μm~425 μm of the distance between the adjacent lateral margin of adhesive body 53 D7.Whereby, the sensor encapsulating structure 100
Size is smaller than prior art, and can use less amount of adhesive body 53, and then by using above-mentioned a small amount of adhesive body
53, make the rising-heat contracting-cold stress suffered by sensor encapsulating structure 100 reduce, lift reliability.
The foregoing is only the preferable possible embodiments of the present invention, be not used for limiting to protection scope of the present invention, it is all according to
The equivalent changes and modifications that the claims in the present invention are done, it should all belong to protection scope of the present invention.
Claims (10)
1. a kind of sensor encapsulating structure, it is characterised in that the sensor encapsulating structure includes：
One substrate, the substrate is included positioned at a upper surface of two opposite sides and a lower surface, and the substrate is on described
Surface is formed with multiple weld pads；
One sensor chip, the sensor chip include the top surface and a bottom surface positioned at two opposite sides, the sensor chip
The bottom surface is arranged at the upper surface of the substrate, and the top surface includes a sensing area and around the sensing area
A spacer region；Wherein, the sensor chip between at least part edge of the top surface and the spacer region formed with more
Individual connection gasket；
More metal lines, one end of a plurality of metal wire are connected to multiple weld pads, and a plurality of metal wire
The other end be connected to multiple connection gaskets；
One bonding layer, the bonding layer are arranged at the top surface position at least partly between the edge and the spacer region
On, and being partially embedded in the bonding layer per metal line；
One photic zone, the photic zone has the first surface and a second surface positioned at two opposite sides, described euphotic
The second surface gluing is in the bonding layer, and the second surface stays in gluing on the outside of the position of the bonding layer
There is a fixed area；Wherein, the sensor chip orthographic projection is in the second surface and formed with a view field, the projected area
Domain is in the profile of the second surface；And
One adhesive body, the adhesive body are arranged at the upper surface of the substrate and coat the sensor chip lateral border, institute
State bonding layer lateral border and the photic zone lateral border and the fixed area, and the part of every metal wire and each institute
Weld pad is stated all to be embedded in the adhesive body.
2. sensor encapsulating structure as claimed in claim 1, it is characterised in that the adhesive body is further defined to a liquid
Packing colloid, and the euphotic first surface with the adjacent adhesive body surface formed with more than 90 degree and small
In the angle equal to 180 degree.
3. sensor encapsulating structure as claimed in claim 2, it is characterised in that the angle is between 115 degree to 150 degree.
4. sensor encapsulating structure as claimed in claim 2, it is characterised in that the sensor encapsulating structure further comprises
There is the molding colloid for being arranged at the adhesive body apical margin, the top surface of the molding colloid is in the adjacent first surface
It is arranged in parallel, the side surface and the lateral margin of the adjacent adhesive body of the molding colloid are set in copline.
5. sensor encapsulating structure as claimed in claim 1, it is characterised in that the adhesive body is further defined to a molding
Colloid, and the euphotic first surface and an adjacent angle of the adhesive body surface formed with 180 degree.
6. the sensor encapsulating structure as any one of claim 1 to 5, it is characterised in that the every metal wire bag
Contain the summit being embedded in the adhesive body.
7. sensor encapsulating structure as claimed in claim 6, it is characterised in that the top surface of the sensor chip and every
The adjacent regions of the metal wire are formed with the angle less than or equal to 45 degree.
8. the sensor encapsulating structure as any one of claim 1 to 5, it is characterised in that described euphotic described
Lateral border is stepped and is embedded in the adhesive body.
9. sensor encapsulating structure as claimed in claim 8, it is characterised in that the area of the first surface is less than described the
The area on two surfaces.
10. the sensor encapsulating structure as any one of claim 1 to 5, it is characterised in that described euphotic described
The distance between lateral border and the adjacent adhesive body lateral margin are 300 μm~500 μm, any one described weld pad of the substrate
Ultimate range between outer rim and the adjacent sensor chip lateral border is 200 μm~350 μm, is adjacent to any one described weldering
The distance between the sensor chip lateral border of pad and the adjacent adhesive body lateral margin are 225 μm~425 μm.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106112674A TWI630688B (en) | 2016-07-06 | 2017-04-14 | Sensor package structure |
| EP17178914.2A EP3267486B1 (en) | 2016-07-06 | 2017-06-30 | Sensor package structure |
| JP2017131010A JP6479099B2 (en) | 2016-07-06 | 2017-07-04 | Sensor package structure |
| US15/641,401 US10236313B2 (en) | 2016-07-06 | 2017-07-05 | Sensor package structure |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662358643P | 2016-07-06 | 2016-07-06 | |
| US62/358,643 | 2016-07-06 |
Publications (2)
| Publication Number | Publication Date |
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| CN107591374A true CN107591374A (en) | 2018-01-16 |
| CN107591374B CN107591374B (en) | 2020-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610868068.0A Active CN107591374B (en) | 2016-07-06 | 2016-09-30 | Sensor package structure |
| CN201610868073.1A Active CN107591420B (en) | 2016-07-06 | 2016-09-30 | Sensor package structure |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610868073.1A Active CN107591420B (en) | 2016-07-06 | 2016-09-30 | Sensor package structure |
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| CN (2) | CN107591374B (en) |
| TW (2) | TWI631675B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN107591420A (en) | 2018-01-16 |
| TWI631675B (en) | 2018-08-01 |
| CN107591374B (en) | 2020-02-18 |
| CN107591420B (en) | 2020-02-18 |
| TWI630688B (en) | 2018-07-21 |
| TW201813024A (en) | 2018-04-01 |
| TW201803040A (en) | 2018-01-16 |
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Effective date of registration: 20230116 Address after: Taipei City, Taiwan Chinese Zhongzheng District Yanping Road No. 83 6 floor Patentee after: TONG HSING ELECTRONIC INDUSTRIES, Ltd. Address before: Hsinchu County Patentee before: KINGPAK TECHNOLOGY Inc. |