JPH1131761A - Semiconductor component and manufacture of the same - Google Patents

Semiconductor component and manufacture of the same

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Publication number
JPH1131761A
JPH1131761A JP18677997A JP18677997A JPH1131761A JP H1131761 A JPH1131761 A JP H1131761A JP 18677997 A JP18677997 A JP 18677997A JP 18677997 A JP18677997 A JP 18677997A JP H1131761 A JPH1131761 A JP H1131761A
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JP
Japan
Prior art keywords
substrate
liquid resin
semiconductor chip
sealing
portion
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP18677997A
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Japanese (ja)
Inventor
Yoshiharu Harada
嘉治 原田
Original Assignee
Denso Corp
株式会社デンソー
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Application filed by Denso Corp, 株式会社デンソー filed Critical Denso Corp
Priority to JP18677997A priority Critical patent/JPH1131761A/en
Publication of JPH1131761A publication Critical patent/JPH1131761A/en
Application status is Pending legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

PROBLEM TO BE SOLVED: To prevent the outflow of liquid resin to the outside of a sealing range, in a simple constitution at the time of application and hardening liquid resin on a substrate, and providing a sealing resin layer. SOLUTION: After a semiconductor chip has been mounted on a substrate A, and electrically connected with this, a liquid resin B is applied so that the semiconductor chip can be covered. In the application process, the liquid resin B is gradually leaded and spread from the central side of the substrate A to the outer side. A contact angle θ at a contact point P1 at the edge part of the liquid resin B is balanced and stabilized, when Rs=Rl cosθ+Rsl (where Rs, Rl and Rsl are respectively the surface tension of the substrate A, the surface tension of the liquid resin B, and the surface tension of a boundary face) is established. When the edge part of the substrate A is microscopically is rounded, an apparent contact angle θ' of the liquid resin B made with the upper face of the substrate A is made large in the balanced state at a contact point P2 at the edge part of the substrate A such that the edge part of the substrate A can function as the flow stopper for the liquid resin B.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、基板上に装着された半導体チップを封止樹脂層により封止するようにした半導体部品及びその製造方法に関する。 The present invention relates to relates to a semiconductor component and a manufacturing method thereof which is adapted to a semiconductor chip mounted on the substrate is sealed by the sealing resin layer.

【0002】 [0002]

【発明が解決しようとする課題】例えばBGA,MCM The object of the invention is to be Solved for example BGA, MCM
といった半導体部品は、図7及び図8に示すように、セラミック基板等の基板1上に、図示しない半導体チップを装着すると共に該基板1との電気的接続(ワイヤボンディング等)を行った後、その基板1上の半導体チップ等を封止樹脂層2及び3により樹脂封止して構成される。 Semiconductor components such as shown in FIGS. 7 and 8, on a substrate 1 such as a ceramic substrate, after electrical connection between the substrate 1 (the wire bonding or the like) were carried out with mounting the semiconductor chip, not shown, a semiconductor chip or the like on that substrate 1 constituted by resin sealing by the sealing resin layer 2, and 3. これら図7及び図8は、BGA(ボールグリッドアレイ)パッケージの例を示しており、前記基板1の裏面側には、多数個のボール状のはんだバンプ4が配列して設けられるようになっている。 These FIGS. 7 and 8, BGA shows an example of a (ball grid array) package, on the back side of the substrate 1, the plurality of ball-shaped solder bumps 4 adapted to be provided by arranging there.

【0003】このとき、前記封止樹脂層2,3の形成方法としては、図7に示すような金型を用いたモールドコンパウンドによる方法と、図8に示すような半導体チップを覆うように液状の樹脂を塗布し硬化させる方法とがあった。 [0003] At this time, as a method of forming the sealing resin layer 2 and 3, liquid to cover the process according molding compound using a mold as shown in FIG. 7, the semiconductor chip as shown in FIG. 8 there was a method for the application of the resin curing. ところが、金型を用いるものでは、少量生産の場合に金型製作等のコストが高くなるため、例えばMC However, the intended use of the mold, since the cost of die production, etc. is higher in the case of small production, for example, MC
M(マルチチップモジュール)のような少量多品種の製造が主となるものでは、図8に示すような液状樹脂を塗布する方法が採用されることが一般的である。 M intended to the production of high-mix low-volume, such as (multi-chip module) is the main, it is common method of applying a liquid resin as shown in FIG. 8 is employed.

【0004】ところで、上記のように基板1上への液状樹脂の塗布により封止樹脂層3を形成する場合、基板1 [0004] When forming the sealing resin layer 3 by coating the liquid resin on the substrate 1 as described above, the substrate 1
上の封止樹脂層を形成したい範囲を越えて液状樹脂が流れ出ることは避けなければならない。 Should be avoided flows is liquid resin beyond the range to form the sealing resin layer of the upper. そこで、従来では、液状樹脂の流れ防止のために、特開昭58−484 Therefore, conventionally, in order to prevent the liquid resin flow, JP 58-484
42号公報や特開昭61−216438号公報に示されるように、半導体チップの装着位置の周囲部分に、液状樹脂の流出防止用の壁となる樹脂枠(印刷枠)を形成し、その樹脂枠内に注型樹脂材料を充填することが考えられていた。 As shown in 42 and JP 61-216438, JP-around portion of the mounting position of the semiconductor chip, to form a resin frame serving as a wall of the outflow preventing liquid resin (printing frame), the resin be filled with casting resin materials has been considered in the frame.

【0005】しかしながら、このような方法では、十分な効果を得るためには、樹脂枠を十分な高さで且つ厚壁状に形成しなければならず、樹脂枠を形成するために相当の手間や多くの材料が必要となる欠点がある。 However, in this method, in order to obtain a sufficient effect, it must resin frame was formed and the thick wall shape high enough, labor equivalent to form the resin frame and a lot of material there is a drawback that you will need. また、 Also,
樹脂枠の壁厚(幅)の分だけパッケージが大形化する懸念もあった。 Amount corresponding package wall thickness of the resin frame (width) was also concern that large in size.

【0006】本発明は上記事情に鑑みてなされたもので、その目的は、基板上に液状樹脂を塗布して硬化させることにより封止樹脂層を設けるようにしたものにあって、簡単な構成で、液状樹脂の封止範囲外への流出防止を図ることができる半導体部品及びその製造方法を提供するにある。 [0006] The present invention has been made in view of the above circumstances, and an object, in the those acceptable to provide a sealing resin layer by curing the liquid resin is applied to a substrate, a simple structure in is to provide a semiconductor component and a manufacturing method thereof capable of reducing the outflow prevention to the sealing range of the liquid resin.

【0007】 [0007]

【課題を解決するための手段】本発明者は、基板上面に液状樹脂を塗布して濡れ広がらせる際に、液状樹脂の端部が基板の端縁部に至ったところでは、見掛上、その表面張力が大きくなった如き性状を呈し、容易に基板の端縁部の外側に溢れなくなるため、結果的に、基板の端縁部が液状樹脂の流れ止め役割を果たすことに着目し、本発明を成し遂げたのである。 The present inventors Means for Solving the Problems], when to wet and spread to a liquid resin is applied on the upper surface of the substrate, where the end portion of the liquid resin reaches the edge of the substrate, MiKakeue, exhibit its such surface tension is increased properties, easily to become not overflow outside the edge of the substrate, resulting in the end edge of the substrate is noticed that antirunning role of the liquid resin, the invention is of the accomplishments. その原理の詳細は、次のように考えられる。 For more information on the principle, it is considered as follows.

【0008】即ち、図1(a)に示すように、基板Aの上面に液状樹脂Bをある量塗布した際、その端部の接触点P1が基板A上に位置しているときには、その接触点P1における液状樹脂Bの盛上り角度(接触角)θは、 Rs=Rl cosθ+Rsl …(1) (但し、Rsは基板Aの表面張力の大きさ、Rlは液状樹脂Bの表面張力の大きさ、Rslは基板Aと液状樹脂B Namely, as shown in FIG. 1 (a), when the amount applied to the upper surface of the substrate A is a liquid resin B, when the contact point P1 of the end portion is positioned on the substrate A, the contact the excitement angle (contact angle) theta of the liquid resin B at the point P1, Rs = Rl cosθ + Rsl ... (1) (where, Rs is the magnitude of the surface tension of the substrate a, Rl is the surface tension of the liquid resin B size , Rsl the substrate A and the liquid resin B
との界面の表面張力の大きさ)の式が成立つところで釣り合って安定している。 Interface between balanced by the formula is true at the surface tension magnitude of) are stable with. この図1(a)の状態から更に液状樹脂Bを追加塗布すると、液状樹脂Bは再び同じ角度θとなるまで濡れ広がるようになる。 This FIGS. 1 (a) further adding applying a liquid resin B from the state of the liquid resin B is as spreads until the same angle θ again.

【0009】ところが、基板Aの端縁部を微視的に見ると、図1(b)に示すように、いわゆるRがついていると考えられるので、液状樹脂Bを追加塗布していってその触点P2が基板Aの端縁部に至ると、接触点P2の接線方向が水平状態から、外側に向けて下降する傾斜状に変化して表面張力(Rs,Rl,Rsl)の向きが変化し、その状態でやはり上記(1)式が成立つところで釣り合って安定する。 [0009] However, looking at the edge of the substrate A microscopically, as shown in FIG. 1 (b), it is considered that so-called R is attached, the go by adding applying a liquid resin B When Sawaten P2 reaches the edge of the substrate a, the tangential horizontal state of the contact point P2, the surface tension changes in inclined descending towards the outside (Rs, Rl, Rsl) the direction of change and, also stable in equilibrium where the formula (1) is true in this state. 尚、基板A端縁部のR部は非常に小さいため、重力の影響は表面張力に比べて極めて小さく、ほぼ無視できると考えられる。 Since R portion of the substrate A edge is very small, the influence of gravity is very small compared to the surface tension, is considered almost negligible.

【0010】この場合、基板Aの端縁部における釣り合い状態においては、接触点P2における液状樹脂Bの基板Aの上面に対する盛上り角度(いわば見掛上の接触角)θ´が、図1(a)に示す角度θに比べて大きくなる。 [0010] In this case, in the balanced state at the edge portion of the substrate A, (the contact angle of the upper hanging viewed so to speak) embossment angle with respect to the upper surface of the substrate A liquid resin B at the contact point P2 [theta] & apos is 1 ( larger than the angle θ shown in a). このことは、液状樹脂Bの端部が基板Aの端縁部に至った状態では、基板Aの端縁部から先へは液状樹脂B This means that in a state where the end portion of the liquid resin B has reached the edge of the substrate A, the liquid resin B onwards from the edge portion of the substrate A
が容易に溢れ出ないことを意味し、塗布量を増やしていって基板A上面に対する見掛上の接触角が角度θを越えても、見掛上の接触角が角度θ´を越えるまでは溢れ出ることはないのである。 It means that no readily overflowing, even the contact angle of the upper Apparent to the substrate A top go to increase the coating amount exceeds the angle theta, the contact angle of MiKakeue until exceeding angle θ'is it is not that the overflow.

【0011】本発明の請求項1の半導体部品は、基板上に半導体チップを装着すると共に、該基板上に液状樹脂を塗布して硬化させることによりその半導体チップを封止する封止樹脂層を設けるようにしたものにあって、前記基板の少なくとも一部の端縁部を、前記液状樹脂の流れ止めとした状態で、前記封止樹脂層が設けられているところに特徴を有する。 [0011] The semiconductor component of claim 1 of the present invention is to mount the semiconductor chip on the substrate, a sealing resin layer for sealing the semiconductor chip by curing the liquid resin is applied on the substrate in the those acceptable to provide, at least part of the edge portion of the substrate, while the flow stop of the liquid resin, has a feature where the said sealing resin layer is provided.

【0012】これによれば、基板の少なくとも一部の端縁部を液状樹脂の流れ止めとした状態で封止樹脂層を設けるものであるから、上述のように、液状樹脂の塗布時にその液状樹脂が基板の端縁部から溢れ出ることを効果的に防止でき、液状樹脂の封止範囲外への流出防止を図ることができる。 According to this, because at least part of the edge portion of the substrate is intended to provide a sealing resin layer in a state of a liquid resin antirunning, as described above, the liquid at the time of the liquid resin coating the resin overflows from the edge portion of the substrate can be effectively prevented, it is possible to prevent leakage of the sealing range of the liquid resin. また、基板の端縁部を樹脂封止の端部に一致させるように設定するだけで良く、液状樹脂の流出防止用の壁となる枠などを別途に設けるといった必要がなくなるので、簡単な構成で済ませることができる。 Also, the edge portion of the substrate need only be set to match the end portion of the resin sealing, it is unnecessary such provided such a separately frame the wall of the outflow preventing liquid resin, a simple structure it can be dispensed with.

【0013】この場合、前記基板の液状樹脂の流れ止めとなる端縁部を、裏面側に向けて逆テーパをなす鋭角状に構成するようにしても良い(請求項2の発明)。 [0013] In this case, the edge portion serving as a flow stopper for the liquid resin of the substrate, may be constructed in an acute angle to an inverted taper towards the rear surface side (the second aspect of the present invention). これによれば、基板の端縁部において、液状樹脂の接触点の表面張力の向きの変化量をより一層大きくすることができ、液状樹脂の溢れ出し防止の効果をより一層高めることができる。 According to this, at the edge portion of the substrate, it is possible to increase further more the amount of change in orientation of the surface tension of the contact point of the liquid resin, the effect of preventing overflow of liquid resin can be further enhanced.

【0014】また、前記基板の液状樹脂の流れ止めとなる端縁部に、該基板よりも表面張力の小さい流れ止め材を設けるようにしても良い(請求項3の発明)。 Further, the edge portion serving as a flow stopper for the liquid resin of the substrate may be provided with a small flow stop member surface tension than the substrate (the invention of claim 3). これによれば、上記した(1)式のRsが小さくなり、この結果、 cosθも小さくつまり釣り合い時の角度θを大きくすることができ、やはり液状樹脂の溢れ出し防止の効果をより一層高めることができる。 According to this, the above-mentioned (1) Rs is small, as a result, cos [theta] is small i.e. it is possible to increase the angle θ at the time of balance, also be further enhanced effect of preventing overflow of liquid resin can.

【0015】ところで、例えばMCMやCOB等においては、半導体部品の設計上、封止樹脂層の端部を、基板の端縁部にもって来ることが難しいあるいは不可能な場合がある。 By the way, in the example MCM and COB like, a semiconductor component design, the ends of the sealing resin layer, it may be a difficult or impossible to bring the edge of the substrate. 本発明の請求項4の半導体部品は、基板上に半導体チップを装着すると共に、該基板上に液状樹脂を塗布して硬化させることによりその半導体チップを封止する封止樹脂層を設けるようにしたものにあって、前記基板上の封止樹脂層形成領域が、その周囲の部分よりも高い段付き形状とされているところに特徴を有する。 The semiconductor component of claim 4 of the present invention is to mount the semiconductor chip on a substrate, the semiconductor chip so as to provide a sealing resin layer for sealing by hardening the liquid resin is applied on the substrate in the what the encapsulating resin layer forming region on said substrate, characterized by the place where there is a high stepped shape than the portion of the periphery thereof.

【0016】これによれば、基板上の周囲部分よりも高い段部の端縁部に、上記したような基板の端部と同等の機能を与えることができ、この結果、封止樹脂層の端部を、基板の端縁部にもって来ることが難しい場合であっても、液状樹脂の塗布時にその液状樹脂が段部の端縁部から溢れ出ることを効果的に防止でき、液状樹脂の封止範囲外への流出防止を図ることができる。 According to this, the edge portion of the higher stepped portion than the peripheral portion of the substrate, can give the edge of the substrate as described above with equivalent function, this result, the sealing resin layer the end, even if it is difficult to bring the edge of the substrate, the liquid resin during the liquid resin coating can be effectively prevented from overflowing from the end edge of the stepped portion, the liquid resin it is possible to prevent leakage of the sealing range. また、基板上にいわゆる島状に段部を設けるだけの簡単な構成で済ませることができる。 Further, it is possible to dispense with a simple configuration of only providing the stepped portion in a so-called island on the substrate.

【0017】そして、本発明の請求項5の半導体部品の製造方法は、基板上に、半導体チップを装着すると共に、その半導体チップを封止する封止樹脂層を設けてなる半導体部品を製造する方法にあって、前記基板上に半導体チップを装着する工程と、前記基板上に前記半導体チップを覆うように液状樹脂を塗布する工程と、前記液状樹脂を硬化させる工程とを含み、前記液状樹脂の塗布工程は、前記基板の少なくとも一部の端縁部を液状樹脂の流れ止めとした状態で実行されるところに特徴を有する。 [0017] Then, a method of manufacturing a semiconductor component according to claim 5 of the present invention, on a substrate, together with mounting a semiconductor chip to produce a semiconductor component formed by providing a sealing resin layer for sealing the semiconductor chip in the method, comprising the steps of mounting the semiconductor chip on the substrate, a step of applying a liquid resin to cover the semiconductor chip on the substrate, and curing the liquid resin, the liquid resin step of coating is characterized at least part of the edge portion of the substrate where the is executed in a state where the liquid resin flow stop.

【0018】これによれば、基板上に装着された半導体チップを覆うように液状樹脂を塗布する工程は、その基板の少なくとも一部の端縁部を液状樹脂の流れ止めとした状態で行われるので、上述のように、簡単な構成で、 According to this, the step of applying a liquid resin so as to cover the semiconductor chips mounted on the substrate is carried out at least part of the edge portion of the substrate in a state in which a liquid resin antirunning since, as described above, with a simple configuration,
液状樹脂の塗布時にその液状樹脂が基板の端縁部から溢れ出ることを効果的に防止でき、液状樹脂の封止範囲外への流出防止を図ることができる。 As the liquid resin during the liquid resin coating can be effectively prevented from overflowing from the edge of the substrate, it is possible to prevent leakage of the sealing range of the liquid resin.

【0019】また、本発明の請求項6の半導体部品の製造方法は、基板上に、半導体チップを装着すると共に、 [0019] The method of manufacturing a semiconductor component according to claim 6 of the present invention, on a substrate, together with mounting a semiconductor chip,
その半導体チップを封止する封止樹脂層を設けてなる半導体部品を製造する方法にあって、前記基板上の封止樹脂層形成領域にその周囲部分よりも高い島状段部を形成する工程と、前記島状段部上に半導体チップを装着する工程と、前記島状段部上に前記半導体チップを覆うように液状樹脂を塗布する工程と、前記液状樹脂を硬化させる工程とを含み、前記液状樹脂の塗布工程は、前記島状段部の端縁部を液状樹脂の流れ止めとした状態で実行されるところに特徴を有する。 Process the semiconductor chip be in a method of manufacturing a semiconductor component formed by providing a sealing resin layer for sealing, to form a high island stepped portion than its surrounding portion in the sealing resin layer formation region on the substrate If, comprising the steps of mounting the semiconductor chip on the island step portion, the step of applying a liquid resin to cover the semiconductor chip on the island stepped portion, and curing the liquid resin, step of applying liquid resin is characterized the edge portions of the island-shaped stepped portion at which is performed in a state in which the liquid resin flow stop.

【0020】これによれば、上述のように、やはり比較的簡単な構成で、液状樹脂の塗布時にその液状樹脂が島状段部の端縁部から溢れ出ることを効果的に防止でき、 According to this, as described above, also a relatively simple configuration in its liquid resin when the liquid resin coating can be effectively prevented from overflowing from the edge portion of the island-shaped stepped portion,
液状樹脂の封止範囲外への流出防止を図ることができる。 It is possible to prevent leakage of the sealing range of the liquid resin. この場合、前記基板上の封止樹脂層形成領域にソルダレジストを塗布することにより、前記島状段部を形成することができ(請求項7の発明)、これにより、島状段部の形成を簡単に行うことができるようになる。 In this case, by applying the solder resist in the sealing resin layer formation region on the substrate, it is possible to form the island-shaped step portion (the invention of claim 7), thereby, formation of the island-like step portion so it is possible to perform easily. 尚、 still,
本発明者の実験によれば、島状段部の高さは、30〜5 According to the experiments conducted by the present inventors, the height of the island-shaped step portion, 30 to 5
0μm以上あれば、所期の効果を得ることができる。 If more than 0 .mu.m, it is possible to obtain the desired effect.

【0021】さらには、上記した各製造方法においては、液状樹脂の塗布工程を、多点塗布あるいは走査塗布により行うことが望ましい(請求項8の発明)。 [0021] Furthermore, in each manufacturing method described above, the liquid resin applying step is preferably carried out by multi-point coating or scan coating (invention of claim 8). これにより、一点塗布の場合と比較して、液状樹脂の塗布工程を効率的に行うことができるようになる。 Thus, as compared with the case of one-point coating, it is possible to perform a liquid resin applying step efficiently.

【0022】 [0022]

【発明の実施の形態】以下、本発明のいくつかの実施例について、図2ないし図6、並びに図1を参照しながら説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, some embodiments of the present invention, FIGS. 2-6, and described with reference to FIG. (1)第1の実施例 図2は、本発明の第1の実施例(請求項1,5,8に対応)に係る半導体部品(BGA)11の構成を示している。 (1) First Embodiment FIG. 2 shows a configuration of a semiconductor component (BGA) 11 according to the first embodiment (corresponding to claim 1, 5, 8) of the present invention.

【0023】この半導体部品11は、セラミック基板やプリント基板からなる四角形の基板12の表面部に半導体チップ13を装着して構成されている。 [0023] The semiconductor component 11 is constructed by mounting the semiconductor chip 13 in a surface portion of the substrate 12 square consisting of a ceramic substrate or a printed circuit board. 詳しく図示はしないが、前記基板12の表面には表面電極が形成されていると共に、基板12の裏面には、前記表面電極とスルーホール等を介して接続状態とされた多数個の裏面電極が格子状に形成されており、基板12の裏面部には、 Are not illustrated in detail but, together with the surface electrode is formed on the surface of the substrate 12 on the back surface of the substrate 12, a large number of back electrode through the surface electrode and the through-hole or the like is the connection state are formed in a lattice shape, the back surface of the substrate 12,
前記各裏面電極に接続された多数個のボール状のはんだバンプ14が設けられている。 The solder bumps 14 of the number connected to each back electrode pieces of ball-shaped is provided.

【0024】そして、前記基板12の表面側においては、前記半導体チップ13は図示しないボンディングワイヤ等により表面電極と接続されており、その状態で、 [0024] Then, in the above surface side of the substrate 12, the semiconductor chip 13 is connected to the surface electrode by a bonding wire or the like (not shown), in this state,
半導体チップ13が例えばエポキシ系(あるいはシリコン系)の熱硬化性樹脂からなる封止樹脂層15により樹脂封止されている。 Are resin-sealed by a sealing resin layer 15 semiconductor chip 13 is made, for example, of a thermosetting resin of an epoxy system (or silicon). このとき、封止樹脂層15の形成領域が基板12全体に一致するように設計されており、封止樹脂層15は、前記基板12の上面部全体を覆う、つまり封止樹脂層15の端縁部が基板12の端縁部に一致するように設けられている。 In this case, forming regions of the sealing resin layer 15 are designed to match the entire substrate 12, the sealing resin layer 15 covers the entire upper surface of the substrate 12, i.e. the end of the sealing resin layer 15 edge part is provided so as to match the edge of the substrate 12.

【0025】さて、上記のように構成された半導体部品11の製造手順について述べる。 [0025] Now, we describe the procedure for manufacturing the semiconductor component 11 configured as described above. まず、上述のように表面電極や裏面電極が形成された基板12に対し、半導体チップ13を装着し、該基板12との電気的接続を行う工程が実行される。 First, with respect to the substrate 12 to the surface electrode and the rear electrode is formed as described above, the semiconductor chip 13 is mounted, the process for electrically connecting the substrate 12 is performed. 次に、その基板12の上面部に、前記半導体チップ13を覆うように液状樹脂(エポキシ系熱硬化性樹脂)を塗布する工程が実行される。 Next, the upper surface of the substrate 12, the step of applying the liquid resin so as to cover the semiconductor chip 13 (epoxy thermosetting resin) is performed.

【0026】この工程は、例えばディスペンサを用いて、基板12の上面側から所要量の液状樹脂を多点塗布(あるいは走査塗布)することにより行われるのであるが、このとき、液状樹脂を基板12の中心側から外側へ向けて次第に濡れ広がらせていき、基板12の四辺の端縁部をその液状樹脂の流れ止めとした状態で行われるようになっている。 [0026] This step, for example by using a dispenser, but of being performed by the required amount of liquid resin from the upper surface side of the substrate 12 to the multipoint application (or scan coating), this time, the substrate 12 of the liquid resin toward the center side to the outside it will not gradually wetting and spreading, and the like are performed to edge portions of the four sides of the substrate 12 in a state of the flow stop of the liquid resin.

【0027】ここで、基板12上面に液状樹脂を塗布して濡れ広がらせる際に、液状樹脂の端部が基板12の端縁部に至ったところでは、見掛上、その表面張力が大きくなった如き性状を呈し、容易に基板12の端縁部の外側に溢れなくなるため、結果的に、基板12の端縁部が液状樹脂の流れ止め役割を果たすのである。 [0027] Here, when causing wetting and spreading and the liquid resin is applied to the substrate 12 upper surface, at the end of the liquid resin reaches the edge of the substrate 12, MiKakeue, its surface tension becomes large exhibit such properties were, for easily become overflowing outside the edge of the substrate 12, as a result, the edge portion of the substrate 12 is the flow stop acts liquid resin.

【0028】即ち、図1を参照するに、図1(a)に示すように、基板Aの上面に液状樹脂Bをある量塗布した際、その端部の接触点P1が基板A上に位置しているときには、その接触点P1における液状樹脂Bの盛上り角度(接触角)θは、 Rs=Rl cosθ+Rsl …(1) (但し、Rsは基板Aの表面張力の大きさ、Rlは液状樹脂Bの表面張力の大きさ、Rslは基板Aと液状樹脂B [0028] That is, referring to FIG. 1, as shown in FIG. 1 (a), when the amount applied to the upper surface of the substrate A is a liquid resin B, the contact point P1 of the end portion is positioned on the substrate A when you are, the embossment angle (contact angle) theta of the liquid resin B at the contact point P1, Rs = Rl cosθ + Rsl ... (1) (where, Rs is the magnitude of the surface tension of the substrate a, Rl is a liquid resin the size of the surface tension of B, Rsl the substrate a and the liquid resin B
との界面の表面張力の大きさ)の式が成立つところで釣り合って安定している。 Interface between balanced by the formula is true at the surface tension magnitude of) are stable with. この図1(a)の状態から更に液状樹脂Bを追加塗布すると、液状樹脂Bは再び同じ角度θとなるまで濡れ広がるようになる。 This FIGS. 1 (a) further adding applying a liquid resin B from the state of the liquid resin B is as spreads until the same angle θ again.

【0029】ところが、基板Aの端縁部を微視的に見ると、図1(b)に示すように、いわゆるRがついていると考えられるので、液状樹脂Bを追加塗布していってその触点P2が基板Aの端縁部に至ると、接触点P2の接線方向が水平状態から外側へ向けて下降する傾斜状に変化して表面張力(Rs,Rl,Rsl)の向きが変化し、 [0029] However, looking at the edge of the substrate A microscopically, as shown in FIG. 1 (b), it is considered that so-called R is attached, the go by adding applying a liquid resin B When Sawaten P2 reaches the edge of the substrate a, inclined to change surface tension tangential contact point P2 is lowered towards the horizontal position to the outside (Rs, Rl, Rsl) the direction of change ,
その状態でやはり上記(1)式が成立つところで釣り合って安定する。 Again stabilized balanced where the formula (1) is true in this state. 尚、基板A端縁部のR部は非常に小さいため、重力の影響は表面張力に比べて極めて小さく、ほぼ無視できると考えられる。 Since R portion of the substrate A edge is very small, the influence of gravity is very small compared to the surface tension, is considered almost negligible.

【0030】この場合、図1(b)に示すような基板A [0030] In this case, the substrate A as shown in FIG. 1 (b)
の端縁部における釣り合い状態においては、接触点P2 In equilibrium state in the edge portion, the contact point P2
における液状樹脂Bの基板Aの上面に対する盛上り角度(いわば見掛上の接触角)θ´が、図1(a)に示す角度θに比べて大きくなる。 Liquid embossment angle with respect to the upper surface of the substrate A of the resin B (as it were seen the contact angle of the upper hanging) [theta] & apos at is greater than the angle θ shown in FIG. 1 (a). このことは、液状樹脂Bの端部が基板Aの端縁部に至った状態では、基板Aの端縁部から先へは液状樹脂Bが容易に溢れ出ないことを意味し、塗布量を増やしていって基板A上面に対する見掛上の接触角が角度θを越えても、見掛上の接触角が角度θ This means that in a state where the end portion of the liquid resin B has reached the edge of the substrate A, the onwards from the edge portion of the substrate A means no overflow easily be liquid resin B, the coating amount also the contact angle of the upper hanging viewed go increasing the substrate a top surface beyond the angle theta, the contact angle of MiKakeue angle theta
´を越えるまでは溢れ出ることはないのである。 Until more than 'is not able to overflowing.

【0031】従って、基板12上を液状樹脂を濡れ広がらせる際に、液状樹脂の広がりをせき止めるための枠等を設けなくとも、基板12の四辺の端縁部をその液状樹脂の流れ止めとすることができ、液状樹脂が基板12の上面から溢れ出ることなく液状樹脂の塗布の工程を実行できるのである。 [0031] Thus, the substrate 12 on the time of wetting and spreading the liquid resin, without providing a frame or the like for damming the liquid resin spreads to the edges of the four sides of the substrate 12 and the flow stop of the liquid resin it can, liquid resin is to be executed the steps of coating the liquid resin without overflowing from the upper surface of the substrate 12.

【0032】この後、上記塗布された液状樹脂を硬化させる工程が実行される。 [0032] Thereafter, the step of curing the applied liquid resin is performed. この工程は、内部の温度が例えば150〜180℃に維持された加熱炉内に、基板12 This step is a heating furnace internal temperature is maintained, for example, to 150 to 180 ° C., the substrate 12
を収容し、数時間程度放置することにより行われ、液状樹脂が硬化して封止樹脂層15となるのである。 Houses, carried out by leaving several hours, than the sealing resin layer 15 liquid resin is cured. 尚、このように形成された封止樹脂層15は、その上面が平坦性の十分高いものとなり、半導体部品11として被真空吸着性に優れたものとなり、また外観も優れたものとなる。 Incidentally, the thus formed sealing resin layer 15 has its upper surface becomes sufficiently high flatness, it is excellent in the vacuum adsorbing the semiconductor component 11, also becomes appearance was also good. しかる後、基板12の裏面部に、はんだバンプ14 Thereafter, the back surface of the substrate 12, the solder bumps 14
を設ける工程が行われて半導体部品11が得られるのである。 It is taking place step of providing a is the semiconductor component 11 is obtained.

【0033】このように本実施例によれば、基板12の端縁部が液状樹脂の流れ止め役割を果たすことに着目し、基板12の端縁部を液状樹脂の流れ止めとした状態で封止樹脂層15を設けるようにしたので、従来のような液状樹脂の流出防止用の壁となる樹脂枠を形成するものと異なり、簡単な構成で済ませながらも、液状樹脂の封止範囲外への流出防止を図ることができるという優れた実用的効果を奏するものである。 According to the present embodiment, sealed in a state where the edge portion of the substrate 12 is focused on the fact antirunning serve liquid resin, the edge portion of the substrate 12 was set to the liquid resin antirunning since as provided sealing resin layer 15, different from the one forming the walls become resin frame for escape prevention of a conventional liquid resin, such as, while finished with a simple configuration, the sealing range of the liquid resin in which exhibits an excellent practical effect that it is possible to outflow prevention. また、本実施例では、液状樹脂の塗布工程を、多点塗布あるいは走査塗布により行うようにしたので、一点塗布の場合と比較して、液状樹脂の塗布工程を効率的に行うことができるようになるという利点も得ることができる。 Further, in this embodiment, a liquid resin coating step, since to carry out the multi-point coating or scan coating, so that can be performed as compared with the single point application, the liquid resin applied process effectively can be obtained advantage that the.

【0034】尚、上記した実施例では、基板12の四辺の端縁部全てを液状樹脂の流れ止めとしたが、基板12 [0034] In the embodiment described above, all end edge of the four sides of the substrate 12 was set to the liquid resin flow stopped, the substrate 12
の端縁部の少なくとも一部を液状樹脂の流れ止めとするように構成しても良い。 At least a portion of the edge portion of the may be adapted to the flow stop of the liquid resin.

【0035】(2)第2,第3の実施例 図3及び図4は、本発明の第2の実施例(請求項2に対応)を示している。 [0035] (2) second and third embodiments FIGS. 3 and 4 show a second embodiment of the present invention (corresponding to claim 2). 図3に示すように、この実施例が上記第1の実施例と異なる点は、基板16の端縁部を液状樹脂の流れ止めとした状態で封止樹脂層17を設ける際に、前記基板16の液状樹脂の流れ止めとなる端縁部を、裏面側に向けて逆テーパをなす鋭角状に構成したところにある。 As shown in FIG. 3, this embodiment is the first embodiment differs, in providing the sealing resin layer 17 to the edge portion of the substrate 16 in a state in which the liquid resin flow stop, the substrate the edge portion serving as a flow stop 16 of the liquid resin, there is to configured to sharp angle which forms a reverse taper toward the back side. これによれば、基板16の端縁部における液状樹脂の溢れ出し防止の効果をより一層高めることができるのである。 According to this, it is possible to further enhance the effect of preventing overflow of liquid resin at the edge portion of the substrate 16.

【0036】即ち、図4は、基板16の端縁部を微視的に示しており、基板16の端縁部は鋭角的に構成され、 [0036] That is, FIG. 4 shows the edge portion of the substrate 16 microscopically, the edge of the substrate 16 is configured acute,
やはりその先端部にはいわゆるRがついている。 Still at its tip is attached so-called R. ここで、液状樹脂Bが基板16上面を濡れ広がって基板16 Here, the liquid resin B is spread wet substrate 16 upper surface substrate 16
の端縁部に至っても、重力の影響を無視すれば、液状樹脂Bの端部がいわば下面側に回り込んで接触点P3の状態に至るまで、液状樹脂Bの追加塗布が可能となると考えられる。 Also led to the edge, ignoring the effects of gravity, up to the state of the contact point P3 wraps around the end portion so to speak lower surface side of the liquid resin B, considered as additional coating of a liquid resin B becomes possible It is.

【0037】この状態では、表面張力(Rs,Rl,R [0037] In this state, the surface tension (Rs, Rl, R
sl)の向きが、接触点P1が基板16上面にある場合(図1(a))と比べて角度90度以上変化し、上記(1)式が成立した状態で、液状樹脂Bの基板Aの上面に対する盛上り角度(いわば見掛上の接触角)θ″をかなり大きくすることができ、この結果、かなり多量の液状樹脂Bを塗布しても溢れ出ることはなくなるのである。実際には、重力の影響が出るので、図4に示す状態は誇大的であると言えるが、図1(b)に示したものと比べても一定の高い効果を得ることができ、特に液状樹脂Bの表面張力Rlが大きい場合に有効となるのである。 Orientation sl) is, the contact point P1 is changed when (FIG. 1 (a)) as compared to an angle 90 degrees or more on the substrate 16 upper surface, with the above equation (1) is satisfied, the substrate A liquid resin B of (the contact angle of the upper hanging viewed so to speak) embossment angle with respect to the upper surface theta "can a considerably large, the result is the considerably never overflowing be coated with a large amount of liquid resin B. actually , the influence of gravity out, but it can be said that the state shown in FIG. 4 is exaggerated manner, as compared to that shown in FIG. 1 (b) can be obtained a high effect of constant, in particular the liquid resin B surface tension Rl is to become effective in the case of a large.

【0038】図5は、本発明の第3の実施例(請求項3 [0038] Figure 5, a third embodiment of the present invention (claim 3
に対応)を示している。 Shows the correspondence) to. この実施例が上記第1の実施例と異なる点は、基板12の端縁部に、該基板12よりも表面張力の小さい流れ止め材18を設けたところにある。 This embodiment differs from the first embodiment, the edge portion of the substrate 12, there is to provided a small flow stop member 18 surface tension than the substrate 12. この流れ止め材18は、例えばテフロン等から成り、液状のものを塗布する、あるいは予めテープ状に形成されたものを貼付けることによって基板12の端面部に設けられるようになっている。 The flow stop member 18, for example, a Teflon or the like is applied is liquid, or is adapted to be formed on an end face portion of the substrate 12 by kicking sticking those previously formed into a tape.

【0039】これによれば、液状樹脂の端部が接触する点の基板12の表面張力つまり上記した(1)式のRs [0039] According to this, the end portion of the liquid resin has a surface tension clogging above substrate 12 point of contact (1) of Rs
が小さくなり、ひいては、 cosθが小さくなり、釣り合い時の角度θを大きくすることができる。 It is reduced, and hence, cos [theta] is small, it is possible to increase the angle θ at the time of balance. この結果、接触点における液状樹脂の基板12の上面に対する盛上り角度(いわば見掛上の接触角)θ´をより大きくすることができ、液状樹脂の溢れ出し防止の効果をより一層高めることができるものである。 As a result, [theta] & apos (contact angle of the upper hanging viewed so to speak) embossment angle with respect to the upper surface of the substrate 12 of the liquid resin can be further increased at the contact point, is possible to further enhance the effect of preventing overflow of liquid resin it is those that can be.

【0040】(3)第4の実施例 図6を参照して、本発明の第4の実施例(請求項4, [0040] (3) with reference to the fourth embodiment Figure 6, a fourth embodiment of the present invention (claim 4,
6,7に対応)について述べる。 Corresponding to 6,7) will be described. 図6は、本実施例に係る半導体部品(COB)21の要部構成を示している。 Figure 6 shows a configuration of a main part of a semiconductor component (COB) 21 according to this embodiment.
この半導体部品21は、例えばプリント基板からなる大形の基板22に半導体チップ(図示せず)を装着し、その半導体チップを封止する封止樹脂層23を基板22上に部分的に設けて構成されている。 The semiconductor component 21, for example a semiconductor chip (not shown) mounted on large substrate 22 made of printed circuit board, partially provided the sealing resin layer 23 which seals the semiconductor chip on the substrate 22 It is configured.

【0041】そして、このとき、基板22の上面部の封止樹脂層23の形成領域(四角形の領域)には、その周囲部よりも高くなった島状段部24が形成されており、 [0041] At this time, in the formation region of the upper surface portion of the sealing resin layer 23 of the substrate 22 (rectangular area), is formed with island-shaped step portion 24 is higher than its peripheral portion,
前記半導体チップはその島状段部24上に装着され、また、前記封止樹脂層23の端部がその島状段部24の端縁部に一致している。 The semiconductor chip is mounted on the island-shaped step part 24, also the end portion of the sealing resin layer 23 is coincident with the edge of the island-shaped step portion 24. 本実施例では、前記島状段部24 In this embodiment, the island-shaped stepped portion 24
は、ソルダレジストから構成され、その高さ寸法(ソルダレジストの塗布厚み寸法)が例えば30〜50μmとされている。 Is composed of solder resist, is the height (coating thickness of the solder resist), for example as 30 to 50 [mu] m.

【0042】かかる半導体部品21を製造するにあたっては、基板22の製作時のソルダレジストの印刷時に封止樹脂層23の形成領域にもソルダレジストを印刷塗布することにより予め島状段部24を形成しておく。 [0042] Such in manufacturing the semiconductor component 21, an island-shaped step portion 24 in advance by also printed coated solder resist in the formation region of the sealing resin layer 23 at the time of printing of the solder resist, at the time of production of the substrate 22 keep. そして、この基板22の島状段部24上に半導体チップを装着して所要の電気的接続を行った後に、該島状段部24 Then, after the conducted necessary electrical connection by mounting the semiconductor chip on the island stepped portion 24 of the substrate 22, island-shaped stepped portion 24
上にその半導体チップを覆うように液状樹脂を塗布するのであるが、この液状樹脂の塗布の工程は、島状段部2 Although for applying a liquid resin to cover the semiconductor chip on the coating process of the liquid resin, the island-shaped stepped portion 2
4の四辺の端縁部をその液状樹脂の流れ止めとした状態で行われるのである。 4 of the edge portion of the four sides than is carried out in a state where the flow stop of the liquid resin.

【0043】この場合、上記第1の実施例等と同様に、 [0043] As with this case, the first embodiment and the like,
濡れ広がる液状樹脂が容易に島状段部24の端縁部の外側に溢れなくなるため、島状段部24の端縁部が液状樹脂の流れ止めとして機能するようになり、従って、この実施例によっても、比較的簡単な構成で済ませながら、 Since the wetting spread the liquid resin is not overflowing outside the edge of the easily islands stepped portion 24, the edge portion of the island-shaped stepped portion 24 is to function as a flow stopper for the liquid resin, therefore, this embodiment as well, while finished with a relatively simple configuration,
液状樹脂の封止範囲外への流出防止を図ることができるものである。 In which it is possible to prevent leakage of the sealing range of the liquid resin. また、特に本実施例では、島状段部24をソルダレジストから構成したので、島状段部24の形成工程も簡単に済ませることができる。 Further, particularly in this embodiment, the island-shaped step portion 24 so constructed from the solder resist, it is possible to dispense even step of forming the island-shaped stepped portion 24 easily.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の作用を説明するためのもので、液状樹脂の端部の接触点が基板上面に位置するとき(a)及び基板の端縁部に位置するとき(b)における表面張力と接触角との関係を示す縦断面図 [1] for the purpose of describing the operation of the present invention, the surface tension at the time (b) the contact point of the end portion of the liquid resin is located at the edge portion of the case (a) and substrate positioned on the upper surface of the substrate longitudinal sectional view showing the relationship between the contact angle and the

【図2】本発明の第1の実施例に係る半導体部品の縦断正面図 Longitudinal front view of a semiconductor component according to a first embodiment of the present invention; FIG

【図3】本発明の第2の実施例を示すもので、半導体部品の要部の縦断正面図 [Figure 3] shows the second embodiment of the present invention, longitudinal sectional front view of a main part of a semiconductor component

【図4】作用説明用の拡大縦断面図 Figure 4 is an enlarged longitudinal sectional view for explaining working

【図5】本発明の第3の実施例を示す半導体部品の要部の縦断正面図 Longitudinal sectional front view of a main part of the semiconductor component showing a third embodiment of the present invention; FIG

【図6】本発明の第4の実施例を示す半導体部品の要部の縦断正面図 Longitudinal sectional front view of a main part of the semiconductor component showing a fourth embodiment of the invention; FIG

【図7】従来例を示す図2相当図 [7] Figure 2 corresponds diagram showing a conventional example

【図8】他の従来例を示す図2相当図 [8] Figure 2 corresponds diagram showing another conventional example

【符号の説明】 DESCRIPTION OF SYMBOLS

図面中、11,21は半導体部品、12,16,22は基板、13は半導体チップ、15,17,23は封止樹脂層、18は流れ止め材、24は島状段部、Aは基板、 In the drawings, 11 and 21 semiconductor components, 12, 16, 22 is a substrate, 13 is a semiconductor chip, 15,17,23 sealing resin layer, 18 antirunning material, 24 islands stepped portion, A is the substrate ,
Bは液状樹脂を示す。 B is a liquid resin.

Claims (8)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 基板上に半導体チップを装着すると共に、該基板上に液状樹脂を塗布して硬化させることによりその半導体チップを封止する封止樹脂層を設けるようにしたものであって、 前記基板の少なくとも一部の端縁部を、前記液状樹脂の流れ止めとした状態で、前記封止樹脂層が設けられていることを特徴とする半導体部品。 With 1. A mounting a semiconductor chip on a substrate, be one obtained by the semiconductor chip to provide a sealing resin layer for sealing by hardening the liquid resin is applied on the substrate, at least a portion of the edge portion, while the flow stop of the liquid resin, the semiconductor component, wherein the sealing resin layer is provided in the substrate.
  2. 【請求項2】 前記基板の液状樹脂の流れ止めとなる端縁部は、裏面側に向けて逆テーパをなす鋭角状に構成されていることを特徴とする請求項1記載の半導体部品。 Wherein the edge portion serving as a flow stopper for the liquid resin of the substrate, a semiconductor component according to claim 1, characterized by being configured to acute angle forming the reverse tapers toward the back side.
  3. 【請求項3】 前記基板の液状樹脂の流れ止めとなる端縁部には、該基板よりも表面張力の小さい流れ止め材が設けられていることを特徴とする請求項1又は2記載の半導体部品。 Wherein the edge portion serving as a flow stopper for the liquid resin of the substrate, a semiconductor according to claim 1 or 2, wherein the small flow stop member surface tension than the substrate is provided parts.
  4. 【請求項4】 基板上に半導体チップを装着すると共に、該基板上に液状樹脂を塗布して硬化させることによりその半導体チップを封止する封止樹脂層を設けるようにしたものであって、 前記基板上の封止樹脂層形成領域が、その周囲の部分よりも高い段付き形状とされていることを特徴とする半導体部品。 With wherein mounting the semiconductor chip on the substrate, it is one obtained by the semiconductor chip to provide a sealing resin layer for sealing by hardening the liquid resin is applied on the substrate, semiconductor component sealing resin layer formation region on the substrate, characterized in that there is a higher stepped shape than the portion of the periphery thereof.
  5. 【請求項5】 基板上に、半導体チップを装着すると共に、その半導体チップを封止する封止樹脂層を設けてなる半導体部品を製造する方法であって、 前記基板上に半導体チップを装着する工程と、前記基板上に前記半導体チップを覆うように液状樹脂を塗布する工程と、前記液状樹脂を硬化させる工程とを含み、 前記液状樹脂の塗布工程は、前記基板の少なくとも一部の端縁部を液状樹脂の流れ止めとした状態で実行されることを特徴とする半導体部品の製造方法。 5. A substrate, as well as mounting the semiconductor chip, a method of manufacturing a semiconductor component formed by providing a sealing resin layer for sealing the semiconductor chip, mounting a semiconductor chip on the substrate includes a step, a step of applying a liquid resin to cover the semiconductor chip on the substrate, and curing the liquid resin, the coating process of the liquid resin, at least a portion of the edge of said substrate the method of manufacturing a semiconductor component, characterized in that it is executed a part in a state where the liquid resin flow stop.
  6. 【請求項6】 基板上に、半導体チップを装着すると共に、その半導体チップを封止する封止樹脂層を設けてなる半導体部品を製造する方法であって、 前記基板上の封止樹脂層形成領域にその周囲部分よりも高い島状段部を形成する工程と、前記島状段部上に半導体チップを装着する工程と、前記島状段部上に前記半導体チップを覆うように液状樹脂を塗布する工程と、前記液状樹脂を硬化させる工程とを含み、 前記液状樹脂の塗布工程は、前記島状段部の端縁部を液状樹脂の流れ止めとした状態で実行されることを特徴とする半導体部品の製造方法。 6. A substrate, as well as mounting the semiconductor chip, a method of manufacturing a semiconductor component formed by providing a sealing resin layer for sealing the semiconductor chip, a sealing resin layer on the substrate formed forming a high island stepped portion than its surrounding portion in the region, a step of mounting the semiconductor chip on the island stepped portion, the liquid resin so as to cover the semiconductor chip on the island stepped portion a step of applying, and the step of curing the liquid resin, the coating process of the liquid resin, the edge portions of the island-shaped stepped portion and characterized in that it is performed in a state in which a liquid resin antirunning a method of manufacturing a semiconductor component to be.
  7. 【請求項7】 前記島状段部は、前記基板上の封止樹脂層形成領域にソルダレジストを塗布することにより形成されることを特徴とする請求項6記載の半導体部品の製造方法。 Wherein said island-shaped step portion, a method of manufacturing a semiconductor component according to claim 6, characterized in that it is formed by applying a solder resist to the encapsulating resin layer forming region on the substrate.
  8. 【請求項8】 前記液状樹脂の塗布工程は、多点塗布あるいは走査塗布により行われることを特徴とする請求項5ないし7のいずれかに記載の半導体部品の製造方法。 Coating process according to claim 8, wherein the liquid resin, the method of manufacturing a semiconductor component according to any of claims 5 to 7, characterized in that is carried out by a multi-point coating or scan coating.
JP18677997A 1997-07-11 1997-07-11 Semiconductor component and manufacture of the same Pending JPH1131761A (en)

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Application Number Priority Date Filing Date Title
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US8148897B2 (en) 2005-04-27 2012-04-03 Samsung Electro-Mechanics Co., Ltd. Backlight unit for LCD using LED
WO2010021346A1 (en) * 2008-08-20 2010-02-25 三菱化学株式会社 Semiconductor light emitting device and method for manufacturing the same
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JPWO2013088790A1 (en) * 2011-12-14 2015-04-27 三菱電機株式会社 Light emitting device, lighting device, display device, and light emitting device manufacturing method
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JP2013138148A (en) * 2011-12-28 2013-07-11 Nichia Chem Ind Ltd Light-emitting device and manufacturing method thereof
JP2016167518A (en) * 2015-03-09 2016-09-15 パナソニックIpマネジメント株式会社 Light emission device and luminaire

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