TWI640073B - Sensor package structure - Google Patents

Abstract

A sensor package structure includes: a substrate, a sensing wafer disposed on the substrate, a plurality of metal lines electrically connecting the substrate and the sensing wafer, a light transmissive layer facing the sensing wafer, an annular support disposed on the substrate, And an encapsulant disposed on the substrate and covering the outer edge of the support and the outer edge of the light transmissive layer. A portion of each of the metal wires is buried in the support body, and the height of the support body relative to the substrate is greater than the height of any one of the metal wires compared to the substrate. The bottom surface of the light transmissive layer includes a central region facing the sensing wafer and a support region that is annular and surrounds the outside of the central region. The support is located outside the sensing wafer, and the support is placed against the support region of the light transmissive layer. Thereby, the sensor package structure can be used to package a smaller size sensing wafer.

Description

Sensor package structure

The present invention relates to a package structure, and more particularly to a sensor package structure.

Electronic components in existing electronic devices need to be developed in a direction of downsizing to enable electronic devices to mount more electronic components in a limited space. However, the development of existing sensor package structures (eg, image sensor package structures) has faced the drawback that existing sensor package structures are not suitable for packaging smaller size sense wafers.

Accordingly, the inventors believe that the above-mentioned defects can be improved, and that the invention has been studied with great interest and with the use of scientific principles, and finally proposes a present invention which is rational in design and effective in improving the above-mentioned defects.

Embodiments of the present invention provide a sensor package structure that can effectively improve problems that are easily caused by an existing sensor package structure by being different from the conventional configuration.

The embodiment of the present invention discloses a sensor package structure, including: a substrate, the substrate includes an upper surface and a lower surface on opposite sides, and the substrate is formed with a plurality of pads on the upper surface; Sensing the wafer, the sensing wafer includes a top surface and a bottom surface on opposite sides, the bottom surface of the sensing wafer being disposed on the upper surface of the substrate and located in the plurality of pads The inner side of the plurality of metal wires, one end of the plurality of metal wires are respectively connected to the plurality of the solder pads, and the other ends of the plurality of metal wires are respectively connected to the plurality of the connection pads; a light transmitting layer The light transmissive layer has a first surface and a second surface on opposite sides, The second surface includes a central region facing the sensing wafer and a support region annular and surrounding the outer side of the central region; a support body, the support body is annular, and the support body is disposed On the upper surface of the substrate and on the outside of the sensing wafer, a top edge of the support body abuts against the support region of the light transmissive layer; wherein, a portion of each of the metal lines Buried in the support body, and a height of the support body relative to the upper surface of the substrate is greater than a height of any one of the metal lines compared to the upper surface of the substrate; a gel body, the sealant being disposed on the upper surface of the substrate and covering the outer edge of the support and the outer edge of the light transmissive layer.

Preferably, the support body comprises: a support layer; and a bonding layer, the bonding layer is annular and disposed on the support layer, and a top edge of the bonding layer abuts against the light transmissive layer The support area.

Preferably, a height of the support layer compared to the upper surface of the substrate is not greater than a height of the top surface of the sensing wafer compared to the upper surface of the substrate, and each A portion of the metal line is buried within the bonding layer, and the support layer does not contact any of the metal lines.

Preferably, the bonding layer is located between the support layer and the support region of the light transmissive layer, and the bonding layer does not contact any of the pads.

Preferably, the bonding layer is further disposed on the upper surface of the substrate, and a plurality of the pads are buried in the bonding layer.

Preferably, the bonding layer comprises: a first layer, the first layer is annular and disposed on the support layer and the upper surface of the substrate, and a plurality of the pads are embedded In the first layer; wherein a height of the first layer relative to the upper surface of the substrate is greater than the top surface of the sensing wafer compared to the upper surface of the substrate a height; and a second layer, the second layer is annular and disposed on the first layer, and the second layer abuts against the support region of the light transmissive layer.

Preferably, the sealant comprises: a molded sealant, the molded sealant a body disposed on the upper surface of the substrate and covering the outer edge of the first layer; and a liquid encapsulant disposed on the molding encapsulant and coated on the The outer edge of the second layer and the outer edge of the light transmissive layer.

Preferably, a height of the support layer relative to the upper surface of the substrate is greater than a height of the top surface of the sensing wafer compared to the upper surface of the substrate, and each A portion of the metal line is buried within the support layer.

Preferably, the sealant comprises: a molded sealant, the molded sealant is disposed on the upper surface of the substrate and coated on an outer edge of the support layer; and a liquid sealant The liquid encapsulant is disposed on the molding encapsulant and covers the outer edge of the bonding layer and the outer edge of the light transmissive layer.

Preferably, the support layer includes an extension on the top surface of the sensing wafer, and the extension is outside the plurality of connection pads.

Preferably, the support layer is disposed on the upper surface of the substrate and between the sensing wafer and the plurality of the pads.

Preferably, the topping bread comprises a sensing area and a beating area surrounded by the sensing area, the sensing area occupies 60% to 95% of the area of the top surface, the feeling The test wafer is provided with a plurality of connection pads in the wire bonding area.

Preferably, the sensing region occupies 80% to 90% of the area of the top surface.

Preferably, the support body is annular and covers at least part of the outer edge of the sensing wafer, or the support body is annular and forms a gap with the outer edge of the sensing wafer.

Preferably, the support does not contact the top surface of the sensing wafer.

In summary, the sensor package structure disclosed in the embodiment of the present invention can maintain the relative position of the light transmissive layer and the sensing wafer through the support body, so that no support structure is needed on the top surface of the sensing wafer. This further facilitates the packaging of the sensed wafer with a reduced size.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the detailed description The invention is not intended to limit the scope of the invention.

100‧‧‧Sensor package structure (eg image sensor package structure)

1‧‧‧Substrate

11‧‧‧ upper surface

111‧‧‧ solder pads

12‧‧‧ Lower surface

2‧‧‧Sensor wafer

21‧‧‧ top surface

211‧‧‧Sensing area

212‧‧‧Line area

213‧‧‧Connecting mat

22‧‧‧ bottom

23‧‧‧ outside edge

3‧‧‧Metal wire

4‧‧‧Transparent layer

41‧‧‧ first surface

42‧‧‧ second surface

421‧‧‧ Central District

422‧‧‧Support area

423‧‧‧fixed area

43‧‧‧ outer edge

5‧‧‧Support

50‧‧‧ outer edge

51‧‧‧Support layer

511‧‧‧ outer edge

512‧‧‧Extension

52‧‧‧Connection layer

521‧‧‧ outer edge

522‧‧‧ first floor

5221‧‧‧ outer edge

523‧‧‧ second floor

5231‧‧‧ outer edge

6‧‧‧ Sealant

61‧‧‧Molded sealant

62‧‧‧Liquid sealant

G‧‧‧ gap

H3, H4, H5, H51, H21, H522, H51'‧‧‧ Height

1 is a top plan view of a first embodiment of a sensor package structure according to the present invention.

FIG. 2 is a schematic view of FIG. 1 after the light transmissive layer and the encapsulant are omitted.

Figure 3 is a cross-sectional view of Figure 1 taken along line III-III.

4 is a top plan view of another embodiment of FIG. 1 (the light transmissive layer and the encapsulant are omitted).

Figure 5 is a cross-sectional view showing another embodiment of Figure 1.

FIG. 6 is a cross-sectional view (1) of a second embodiment of a sensor package structure according to the present invention.

FIG. 7 is a cross-sectional view (2) of a second embodiment of a sensor package structure according to the present invention.

FIG. 8 is a cross-sectional view showing a third embodiment of a sensor package structure according to the present invention.

FIG. 9 is a cross-sectional view showing the fourth embodiment of the sensor package structure of the present invention.

FIG. 10 is a cross-sectional view showing the fifth embodiment of the sensor package structure of the present invention.

FIG. 11 is a cross-sectional view showing the sixth embodiment of the sensor package structure of the present invention.

Please refer to FIG. 1 to FIG. 11 , which are the embodiments of the present invention. It should be noted that the related numbers and appearances mentioned in the embodiments are only used to specifically describe the embodiments of the present invention. The invention is not to be construed as limiting the scope of the invention.

[Example 1]

As shown in FIG. 1 to FIG. 5, the present embodiment discloses a sensor package structure 100, and more particularly, an image sensor package structure 100, but the invention is not limited thereto. The sensor package structure 100 includes a substrate 1 , a sensing chip 2 disposed on the substrate 1 , and a plurality of metal lines 3 electrically connected to the substrate 1 and the sensing wafer 2 . a light-transmitting layer 4 of the sensing wafer 2, a support body 5 disposed on the substrate 1 and capable of maintaining the relative position of the light-transmitting layer 4 and the sensing wafer 2, and a substrate 1 and a colloid 6 coated on the support 5 and the light transmissive layer 4. Hereinafter, the respective component configurations in the sensor package structure 100 of the present embodiment will be separately described, and the connection relationship between the components will be described as appropriate.

As shown in FIG. 2 and FIG. 3, the substrate 1 may be a plastic substrate, a ceramic substrate, a lead frame, or other plate-shaped material, which is not limited in this embodiment. The substrate 1 includes an upper surface 11 and a lower surface 12 on opposite sides, and the substrate 1 is formed with a plurality of pads 111 arranged at intervals on the upper surface 11. Furthermore, the substrate 1 is also formed with a plurality of pads (not labeled) on the lower surface 12 for soldering a plurality of solder balls (not labeled). That is, the substrate 1 of the present embodiment is described as a structure having a Ball Grid Array (BGA), but the present invention is not limited thereto.

As shown in FIG. 2 and FIG. 3, the sensing wafer 2 is illustrated by the image sensing wafer 2 in this embodiment. However, the present invention does not limit the type of the sensing wafer 2 described above. The sensing wafer 2 includes a top surface 21 and a bottom surface 22 on opposite sides, and an outer edge 23 perpendicularly connected to the top surface 21 and the bottom surface 22. The top surface 21 includes a sensing region 211 and a wire bonding region 212 that is annular and surrounds the sensing region 211, and the sensing wafer 2 is provided with a plurality of connection pads 213 in the wire bonding region 212.

In more detail, the sensing region 211 is substantially square (eg, square or rectangular) in this embodiment, and the center of the sensing region 211 may be the center of the top surface 21 (eg, FIG. 2) or There is a distance from the center of the top surface 21 (not shown). The wire bonding area 212 is in a square ring shape in this embodiment, and the width of each portion of the wire bonding area 212 is preferably substantially the same, but the specific shape of the wire bonding area 212 may be according to the needs of the designer or the manufacturer. Adjust it and do not limit it here. The sensing region 211 accounts for 60% to 95% (preferably 80% to 90%) of the area of the top surface 21 of the sensing wafer 2 in this embodiment. In other words, compared to the existing sensing crystal In this embodiment, the area of the wiring area 212 of the sensing wafer 2 is reduced, thereby reducing the size of the entire sensing wafer 2.

Furthermore, the sensing wafer 2 is disposed on the upper surface 11 of the substrate 1 on the bottom surface 22 and on the inner side of the plurality of pads 111, that is, the upper surface 11 of the substrate 1 on which the sensing wafer 2 is disposed. It is located substantially within the area surrounded by the plurality of pads 111. The sensing wafer 2 in this embodiment is fixed to the upper surface 11 of the substrate 1 by die attach adhesive (not shown), but the specific arrangement is not limited thereto.

As shown in FIG. 2 and FIG. 3, one ends of the plurality of metal wires 3 are respectively connected to the plurality of pads 111 of the substrate 1, and the other ends of the plurality of metal wires 3 are respectively connected to the plurality of connections of the sensing wafer 2. Pad 213. Each of the above metal wires 3 can be formed by a reverse bond or a forward bond. Further, when each of the metal wires 3 is in a reverse-punching manner, the top surface 21 of the sensing wafer 2 and the adjacent portion of each of the metal wires 3 can form an angle (not shown) of 45 degrees or less. The vertices of each of the metal wires 3 can be positioned at a lower height position, thereby avoiding the light transmissive layer 4 being touched, but the invention is not limited thereto. For example, the above angle may also be 30 degrees or less.

As shown in FIG. 2 and FIG. 3, the light-transmitting layer 4 is transparent in the present embodiment and is illustrated by a flat glass. However, the present invention does not limit the type of the light-transmitting layer 4. For example, the light transmissive layer 4 may also be formed of a light transmissive (or transparent) plastic material. The light transmissive layer 4 has a first surface 41 and a second surface 42 on opposite sides, and an outer edge 43 perpendicularly connected to the first surface 41 and the second surface 42. The first surface 41 and the second surface 42 of the embodiment are squares of the same size (eg, square or rectangular), and the second surface 42 of the transparent layer 4 has an area larger than the area of the top surface 21 of the sensing wafer 2 , but not limited to this.

Further, the light transmissive layer 4 is disposed on the sensing crystal through the support 5 Above the sheet 2, and the second surface 42 of the light transmissive layer 4 is substantially parallel and faces the top surface 21 of the sensing wafer 2. Further, the second surface 42 includes a central region 421 facing the sensing wafer 2, a support region 422 that is annular and surrounds the outside of the central region 421, and is annular and surrounds A fixing area 423 of the support area 422. The sensing region 211 of the sensing wafer 2 is projected onto the second surface 42 to form a projection area (not labeled), and the projection area corresponds to the central area of the second surface 42. The portion of the second surface 42 that abuts against the support 5 corresponds to the support region 422, and the portion of the second surface 42 other than the central region 421 and the support region 422 corresponds to the fixed region 423.

In addition, the second surface 42 of the light transmissive layer 4 is preferably adjacent but not in contact with each of the metal wires 3, and the apex of each of the metal wires 3 is higher than the height H3 of the upper surface 11 of the substrate 1 (eg, FIG. 3). It is preferably smaller than the height H4 of the second surface 42 of the light transmissive layer 4 compared to the upper surface 11 of the substrate 1 (for example, FIG. 3), but is not limited thereto.

It should be noted that although the light transmissive layer 4 of the present embodiment is described as a flat glass, the specific structure of the light transmissive layer 4 can also be adjusted according to the needs of the designer. For example, in an embodiment not shown in the present invention, the top periphery of the light transmissive layer 4 may also be formed in a stepped configuration for the encapsulant 6 to adhere to the stepped structure.

As shown in FIGS. 2 and 3, the support 5 is annular and its material is, for example, Glass Mount Epoxy (GME), but the invention is not limited thereto. The bottom edge of the support body 5 is disposed on the upper surface 11 of the substrate 1 , and the bottom edge of the support body 5 is located outside the sensing wafer 2 and is located inside the plurality of pads 111 of the substrate 1 . The support 5 is preferably not in contact with the top surface 21 of the sensing wafer 2. The top edge of the support body 5 abuts against the support region 422 of the light transmissive layer 4, that is, the support body 5 does not contact the central region 421 and the fixed region 423 of the light transmissive layer 4.

Furthermore, a portion of each of the metal wires 3 is buried in the above-mentioned support body 5, and The height H5 of the support body 5 compared to the upper surface 11 of the substrate 1 (the height H5 of the present embodiment is substantially equal to the height H4) is greater than the height H3 of any one of the metal wires 3 compared to the upper surface 11 of the substrate 1. Further, the support 5 is coated on at least a portion of the outer edge 23 of the sensing wafer 2, but the invention is not limited thereto. For example, as shown in FIG. 4 and FIG. 5, the support body 5 may also form a gap G with the outer edge 23 of the sensing wafer 2.

As shown in FIG. 2 and FIG. 3 , the sealant 6 is disposed on the upper surface 11 of the substrate 1 and covers the outer edge 50 of the support 5 and the fixed region 423 and the outer edge 43 of the light transmissive layer 4 . Portions of each of the metal wires 3 (e.g., each of the metal wires 3 located outside the support body 5) and each of the pads 111 are embedded in the encapsulant 6.

As described above, the sensor package structure 100 disclosed in this embodiment can maintain the relative position of the light transmissive layer 4 and the sensing wafer 2 through the support 5 to make the top surface 21 of the sensing wafer 2 There is no need to provide a support structure, which in turn facilitates the packaged sensing wafer 2 with a reduced size. Further, the sensor package structure 100 can be adapted to reduce the area of the wire bonding area 212 (eg, the sensing area 211 accounts for 60% to 95% of the area of the top surface 21 of the sensing wafer 2), thereby causing The sensing wafer 2 whose size is reduced.

[Embodiment 2]

Referring to FIG. 6 and FIG. 7 , which is a second embodiment of the present invention, the present embodiment is similar to the first embodiment, and the same portions are not described again, and the difference between the two embodiments mainly lies in the support body 5 . The specific structural differences of this embodiment compared to the first embodiment are generally described below.

The support body 5 includes a support layer 51 and a bonding layer 52 which is annular and disposed on the support layer 51, and the top edge of the bonding layer 52 abuts against the support region 422 of the light transmissive layer 4. That is to say, the type of the support body 5 is not limited in the present invention, and the support body 5 may be a single member of the same material (for example, the first embodiment) Or a composite member composed of a plurality of materials (for example, the second embodiment).

Furthermore, the support layer 51 and the bonding layer 52 are both annular and stacked on each other in this embodiment, and the support layer 51 and the bonding layer 52 can be made of the same material (eg, glass bonding resin, GME) or different. Made of material. The support layer 51 is disposed on the upper surface 11 of the substrate 1 and located between the sensing wafer 2 and the plurality of pads 111, and the support layer 51 is higher than the height of the upper surface 11 of the substrate 1. H51 is not greater than (eg, smaller than) a height H21 of the top surface 21 of the sensing wafer 2 compared to the upper surface 11 of the substrate 1. Accordingly, the support layer 51 preferably does not contact any of the metal wires 3, but the invention is not limited thereto.

Further, as shown in FIG. 6, the support layer 51 is coated on at least a portion of the outer edge 23 of the sensing wafer 2, but the invention is not limited thereto. For example, as shown in FIG. 7, the support layer 51 may also form a gap G with the outer edge 23 of the sensing wafer 2.

Furthermore, the bonding layer 52 is located between the support layer 51 and the support region 422 of the light transmissive layer 4, and the bonding layer 52 preferably does not contact the upper surface 11 of the substrate 1, any one of the pads 111, or any one of them. The pads 213 are connected, and a portion of each of the above metal wires 3 is buried in the bonding layer 52. That is, the support layer 51 and the light transmissive layer 4 of the present embodiment are respectively formed into the support body 5 in two steps, and the support layer 51 is the lower half of the support body 5, and the bonding layer 52 is the support body 5. The upper part. The thickness of the bonding layer 52 of the present embodiment is not less than the thickness of the support layer 51, but the present invention is not limited thereto.

In addition, the encapsulant 6 is disposed on the upper surface 11 of the substrate 1 and covers the outer edge 511 of the support layer 51, the outer edge 521 of the bonding layer 52, and the fixing region 423 and the outer edge 43 of the light transmissive layer 4. . And a portion of each of the metal wires 3 (eg, each of the metal wires 3 located outside the support layer 51 and the bonding layer 52) and each of the pads 111 are buried in the encapsulant 6.

[Embodiment 3]

Please refer to FIG. 8 , which is a third embodiment of the present invention, and the embodiment and the foregoing embodiment. Similarly, the same portions will not be described again, and the difference between the two embodiments is mainly in the bonding layer 52. The specific structural differences of this embodiment compared to the second embodiment are generally described as follows.

The bonding layer 52 is coated on the outer edge 511 of the support layer 51 and the partial top edge, and the bottom edge of the bonding layer 52 is disposed on the upper surface 11 of the substrate 1 , and the plurality of pads 111 are buried in the bonding layer 52 inside. Further, portions of the metal lines 3 connected and adjacent to each of the pads 111 are buried in the bonding layer 52. That is, the support layer 51 is located substantially between the sensing wafer 2 and the bonding layer 52.

In addition, the encapsulant 6 is disposed on the upper surface 11 of the substrate 1 and covers the outer edge 521 of the bonding layer 52 and the fixing region 423 and the outer edge 43 of the light transmissive layer 4. And each of the metal wires 3 and each of the pads 111 are not in contact with the encapsulant 6 , that is, each of the metal wires 3 and each of the pads 111 are located inside the encapsulant 6 .

[Embodiment 4]

Please refer to FIG. 9 , which is a fourth embodiment of the present invention. This embodiment is similar to the third embodiment described above, and the same portions are not described again. The difference between the two embodiments is mainly in the bonding layer 52 . The specific structural differences of this embodiment compared to the third embodiment are generally described as follows.

The bonding layer 52 includes a first layer 522 and a second layer 523 disposed on the first layer 522. The first layer 522 is annular and disposed on the support layer 51 (eg, the outer edge 511 and the partial top edge of the support layer 51), and the bottom edge of the first layer 522 is disposed on the substrate 1 The upper surface 11 and the plurality of pads 111 are embedded in the first layer 522. Further, portions of the metal lines 3 connected and adjacent to each of the pads 111 are buried in the first layer 522. That is, the support layer 51 is located substantially between the sensing wafer 2 and the first layer 522. Further, a height H522 of the first layer 522 compared to the upper surface 11 of the substrate 1 is greater than a height H21 of the top surface 21 of the sensing wafer 2 compared to the upper surface 11 of the substrate 1.

The second layer 523 is annular and disposed on the first layer 522, and the first The second layer 523 abuts against the support region 422 of the light transmissive layer 4. The thickness of the second layer 523 is smaller than the thickness of the first layer 522, and the bottom edge of the second layer 523 is disposed only on a portion of the top edge of the first layer 522, but the invention is not limited thereto.

[Embodiment 5]

Please refer to FIG. 10 , which is a fifth embodiment of the present invention. The present embodiment is similar to the above-mentioned embodiment 4, and the same portions are not described again. The difference between the two embodiments mainly lies in the encapsulant 6 . The specific structural differences of this embodiment compared to the fourth embodiment are generally described as follows.

The encapsulant comprises a molding compound 61 and a liquid compound. The molding encapsulant 61 is disposed on the upper surface 11 of the substrate 1 and covers the outer edge 5221 of the first layer 522. The top edge of the molding encapsulant 61 is preferably aligned with the first layer. The top edge of 522. The liquid encapsulant 62 is disposed on the molding encapsulant 61 and covers the outer edge 5231 of the second layer 523 and the fixing region 423 and the outer edge 43 of the light transmissive layer 4.

[Embodiment 6]

Referring to FIG. 11 , which is a sixth embodiment of the present invention, the present embodiment is similar to the above-mentioned second embodiment, and the same portions are not described again, and the difference between the two embodiments mainly lies in the support body 5 . The specific structural differences of this embodiment compared to the second embodiment are generally described as follows.

The support layer 51 is disposed on the upper surface 11 of the substrate 1 and located between the sensing wafer 2 and the plurality of pads 111, and the support layer 51 is compared with a height H51' of the upper surface 11 of the substrate 1. It is larger than a height H21 of the top surface 21 of the sensing wafer 2 compared to the upper surface 11 of the substrate 1. Accordingly, a portion of each of the metal wires 3 is buried in the above-mentioned support layer 51. Furthermore, the support layer 51 includes an extension portion 512 on the top surface 21 of the sensing wafer 2, and the extension portion 512 is located outside the plurality of connection pads 213.

The bonding layer 52 is located between the support layer 51 and the support region 422 of the light transmissive layer 4, and the bonding layer 52 preferably does not contact the upper surface 11 of the substrate 1, any one of the pads 111, or any of the connection pads. 213, and any metal wire 3. The thickness of the bonding layer 52 of the present embodiment is smaller than the thickness of the support layer 51, but the present invention is not limited thereto.

The encapsulant comprises a molding compound 61 and a liquid compound. The molding encapsulant 61 is disposed on the upper surface 11 of the substrate 1 and covers the outer edge 511 of the support layer 51. The top edge of the molding encapsulant 61 is preferably aligned with the support layer 51. Top edge. The liquid encapsulant 62 is disposed on the molding encapsulant 61 and covers the outer edge 521 of the bonding layer 52 and the fixing region 423 and the outer edge 43 of the light transmissive layer 4.

The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. The equivalents and modifications made by the scope of the present invention should fall within the scope of the claims of the present invention. .

Claims (15)

A sensor package structure includes: a substrate including an upper surface and a lower surface on opposite sides, and the substrate is formed with a plurality of pads on the upper surface; a sensing wafer, The sensing wafer includes a top surface and a bottom surface on opposite sides, the sensing wafer is provided with a plurality of connection pads on the top surface, and the bottom surface of the sensing wafer is disposed on the substrate The upper surface is located on the inner side of the plurality of the solder pads; a plurality of metal lines, one ends of the plurality of metal lines are respectively connected to the plurality of the pads, and the other ends of the plurality of metal lines are respectively connected a plurality of the connection pads; a light transmissive layer having a first surface and a second surface on opposite sides, the second surface of the light transmissive layer having an area larger than the Sensing an area of the top surface of the wafer, the second surface comprising a central region facing the sensing wafer and a support region annular and surrounding the outside of the central region; a support body, The support body is annular, and the support body is disposed on the substrate The upper surface is located outside the plurality of the connection pads of the sensing wafer, and a top edge of the support body abuts against the support region of the light transmissive layer; wherein each of the metal wires Partially embedded in the support body, and a height of the support body relative to the upper surface of the substrate is greater than a height of any one of the metal lines compared to the upper surface of the substrate; And a gel body, the sealant is disposed on the upper surface of the substrate and covers the outer edge of the support and the outer edge of the light transmissive layer. The sensor package structure of claim 1, wherein the support body comprises: a support layer; and a bonding layer, the bonding layer is annular and disposed on the support layer, the connection The top edge of the layer is placed against the support region of the light transmissive layer. The sensor package structure of claim 2, wherein a height of the support layer compared to the upper surface of the substrate is not greater than the top surface of the sensing wafer compared to the substrate a height of the upper surface, and a portion of each of the metal wires is buried in the bonding layer, and the support layer does not contact any of the metal wires. The sensor package structure of claim 3, wherein the bonding layer is between the support layer and the support region of the light transmissive layer, and the bonding layer does not contact any of the soldering pad. The sensor package structure of claim 3, wherein the bonding layer is further disposed on the upper surface of the substrate, and a plurality of the pads are buried in the bonding layer. The sensor package structure of claim 5, wherein the bonding layer comprises: a first layer, the first layer is annular and disposed on the support layer and the substrate a surface, and a plurality of the pads are embedded in the first layer; wherein a height of the first layer relative to the upper surface of the substrate is greater than the top of the sensing wafer a face having a height compared to the upper surface of the substrate; and a second layer, the second layer being annular and disposed on the first layer, and the second layer is abutted against the The support region of the light transmissive layer. The sensor package structure of claim 6, wherein the sealant comprises: a molded sealant, the molded sealant is disposed on the upper surface of the substrate and coated on the An outer edge of the first layer; and a liquid encapsulant disposed on the molding encapsulant and covering the outer edge of the second layer and the outer edge of the light transmissive layer . The sensor package structure of claim 2, wherein a height of the support layer relative to the upper surface of the substrate is greater than a height of the top surface of the sensing wafer compared to the substrate a height of the upper surface, and each of the metal lines The portion is buried in the support layer. The sensor package structure of claim 8, wherein the sealant comprises: a molded sealant, the molded sealant is disposed on the upper surface of the substrate and coated on the An outer edge of the support layer; and a liquid encapsulant disposed on the molding encapsulant and covering the outer edge of the bonding layer and the outer edge of the light transmissive layer. The sensor package structure of claim 8, wherein the support layer includes an extension portion on the top surface of the sensing wafer, and the extension portion is in a plurality of the connection pads Outside. The sensor package structure of any one of claims 2 to 10, wherein the support layer is disposed on the upper surface of the substrate and is located in the sensing wafer and the plurality of pads between. The sensor package structure according to any one of claims 1 to 10, wherein the top bread comprises a sensing area and a line area surrounded by the sensing area, the feeling The measurement area occupies 60% to 95% of the area of the top surface, and the sensing wafer is provided with a plurality of the connection pads in the wire bonding area. The sensor package structure of claim 12, wherein the sensing region occupies 80% to 90% of the area of the top surface. The sensor package structure according to any one of claims 1 to 9, wherein the support body is annular and coated on at least a portion of an outer edge of the sensing wafer, or the support body is in a ring shape A gap is formed between the outer edge of the sensing wafer and the outer side of the sensing wafer. The sensor package structure of any one of claims 1 to 9, wherein the support does not contact the top surface of the sensing wafer.