CN107580753B - 具有输出耦合器的低噪声放大器模块 - Google Patents

具有输出耦合器的低噪声放大器模块 Download PDF

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Publication number
CN107580753B
CN107580753B CN201680026338.1A CN201680026338A CN107580753B CN 107580753 B CN107580753 B CN 107580753B CN 201680026338 A CN201680026338 A CN 201680026338A CN 107580753 B CN107580753 B CN 107580753B
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China
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signal
output terminal
lna
module
circuit
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Chinese (zh)
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CN107580753A (zh
Inventor
梁赖简
K·H·H·王
潘东玲
C·纳拉桑厄
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/62—Two-way amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W24/00—Supervisory, monitoring or testing arrangements
    • H04W24/02—Arrangements for optimising operational condition
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21145—Output signals are combined by switching a plurality of paralleled power amplifiers to a common output

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
CN201680026338.1A 2015-05-07 2016-04-08 具有输出耦合器的低噪声放大器模块 Active CN107580753B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/706,917 2015-05-07
US14/706,917 US9515749B2 (en) 2015-05-07 2015-05-07 Low noise amplifier module with output coupler
PCT/US2016/026679 WO2016178794A1 (en) 2015-05-07 2016-04-08 Low noise amplifier module with output coupler

Publications (2)

Publication Number Publication Date
CN107580753A CN107580753A (zh) 2018-01-12
CN107580753B true CN107580753B (zh) 2021-03-23

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CN201680026338.1A Active CN107580753B (zh) 2015-05-07 2016-04-08 具有输出耦合器的低噪声放大器模块

Country Status (8)

Country Link
US (1) US9515749B2 (enExample)
EP (1) EP3292629B1 (enExample)
JP (1) JP2018515037A (enExample)
KR (1) KR20180004135A (enExample)
CN (1) CN107580753B (enExample)
BR (1) BR112017023910A2 (enExample)
TW (1) TWI618348B (enExample)
WO (1) WO2016178794A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859930B2 (en) * 2015-08-11 2018-01-02 Mediatek Inc. Multi-path low-noise amplifier and associated low-noise amplifier module and receiver
TWI826096B (zh) 2022-11-03 2023-12-11 財團法人工業技術研究院 開關電路以及提供開關電路的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103733522A (zh) * 2011-08-16 2014-04-16 高通股份有限公司 具有组合输出的低噪声放大器
CN104335483A (zh) * 2012-05-25 2015-02-04 高通股份有限公司 用于载波聚集的多输入多输出(mimo)低噪声放大器

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JPH07118620B2 (ja) * 1987-04-21 1995-12-18 日本電気株式会社 双方向性増幅器
US5105166A (en) * 1989-11-30 1992-04-14 Raytheon Company Symmetric bi-directional amplifier
KR100295097B1 (ko) * 1998-08-22 2001-08-07 오길록 광게이트를이용한광공간분할스위칭장치
US7116851B2 (en) * 2001-10-09 2006-10-03 Infinera Corporation Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance
US7206516B2 (en) * 2002-04-30 2007-04-17 Pivotal Decisions Llc Apparatus and method for measuring the dispersion of a fiber span
US6922102B2 (en) * 2003-03-28 2005-07-26 Andrew Corporation High efficiency amplifier
US7239852B2 (en) 2003-08-01 2007-07-03 Northrop Grumman Corporation Asymmetric, optimized common-source bi-directional amplifier
EP1523094A1 (en) 2003-10-07 2005-04-13 Texas Instruments Incorporated Automatically adjusting low noise amplifier
EP2145386B1 (en) * 2007-05-04 2013-11-20 Astrium Limited Multiport amplifiers in communications satellites
JP4949193B2 (ja) * 2007-10-23 2012-06-06 ティーオーエー株式会社 オーディオパワーアンプ
US7705681B2 (en) * 2008-04-17 2010-04-27 Infineon Technologies Ag Apparatus for coupling at least one of a plurality of amplified input signals to an output terminal using a directional coupler
JP5444173B2 (ja) * 2010-09-08 2014-03-19 株式会社東芝 増幅器及びアンプ制御方法
US9300420B2 (en) * 2012-09-11 2016-03-29 Qualcomm Incorporated Carrier aggregation receiver architecture
US9031158B2 (en) * 2012-10-08 2015-05-12 Qualcomm Incorporated Transmit diversity architecture with optimized power consumption and area for UMTS and LTE systems
US9543903B2 (en) 2012-10-22 2017-01-10 Qualcomm Incorporated Amplifiers with noise splitting
US9048928B2 (en) * 2012-11-13 2015-06-02 Qualcomm Incorporated Expandable transceivers and receivers
US8774745B2 (en) * 2012-12-10 2014-07-08 Qualcomm Incorporated Reconfigurable receiver circuits for test signal generation
US9154243B2 (en) 2012-12-17 2015-10-06 Qualcomm Incorporated Receiver calibration with LO signal from inactive receiver
US9106185B2 (en) 2013-03-11 2015-08-11 Qualcomm Incorporated Amplifiers with inductive degeneration and configurable gain and input matching
US9154087B2 (en) 2013-08-01 2015-10-06 Qualcomm Incorporated Amplifiers with configurable mutually-coupled source degeneration inductors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103733522A (zh) * 2011-08-16 2014-04-16 高通股份有限公司 具有组合输出的低噪声放大器
CN104335483A (zh) * 2012-05-25 2015-02-04 高通股份有限公司 用于载波聚集的多输入多输出(mimo)低噪声放大器

Also Published As

Publication number Publication date
BR112017023910A2 (pt) 2018-07-17
EP3292629A1 (en) 2018-03-14
CN107580753A (zh) 2018-01-12
US9515749B2 (en) 2016-12-06
TW201640818A (zh) 2016-11-16
JP2018515037A (ja) 2018-06-07
KR20180004135A (ko) 2018-01-10
WO2016178794A1 (en) 2016-11-10
TWI618348B (zh) 2018-03-11
EP3292629B1 (en) 2025-02-12
US20160329976A1 (en) 2016-11-10

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