BR112017023910A2 - módulo amplificador de baixo ruído com acoplador de saída - Google Patents
módulo amplificador de baixo ruído com acoplador de saídaInfo
- Publication number
- BR112017023910A2 BR112017023910A2 BR112017023910A BR112017023910A BR112017023910A2 BR 112017023910 A2 BR112017023910 A2 BR 112017023910A2 BR 112017023910 A BR112017023910 A BR 112017023910A BR 112017023910 A BR112017023910 A BR 112017023910A BR 112017023910 A2 BR112017023910 A2 BR 112017023910A2
- Authority
- BR
- Brazil
- Prior art keywords
- amplifier module
- output
- output coupler
- low noise
- noise amplifier
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/62—Two-way amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B17/00—Monitoring; Testing
- H04B17/20—Monitoring; Testing of receivers
- H04B17/21—Monitoring; Testing of receivers for calibration; for correcting measurements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W24/00—Supervisory, monitoring or testing arrangements
- H04W24/02—Arrangements for optimising operational condition
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21145—Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
Abstract
trata-se de um módulo amplificador (600) com um acoplador de saída (640). o módulo amplificador (600) pode incluir uma pluralidade de terminais de entrada (601 a 605) e dois ou mais terminais de saída (610, 611). cada terminal de entrada pode ser acoplado a uma entrada de um amplificador independente (620 a 624). saídas dos amplificadores independentes (620 a 624) podem ser acopladas aos dois ou mais terminais de saída (610, 611). o módulo amplificador (600) pode incluir um acoplador de saída (640) para acoplar conjuntamente os dois ou mais terminais de saída (610, 611). um sinal pode ser recebido por um primeiro terminal de saída (610) e ser acoplado pelo acoplador de saída (640) a um segundo terminal de saída (611). em algumas modalidades, quando os dois ou mais terminais de saída (610, 611) são conjuntamente acoplados, os amplificadores independentes (620 a 624) podem se tornar inativos ou operados em uma configuração de ganho mínimo.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/706,917 US9515749B2 (en) | 2015-05-07 | 2015-05-07 | Low noise amplifier module with output coupler |
PCT/US2016/026679 WO2016178794A1 (en) | 2015-05-07 | 2016-04-08 | Low noise amplifier module with output coupler |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112017023910A2 true BR112017023910A2 (pt) | 2018-07-17 |
Family
ID=55754480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112017023910A BR112017023910A2 (pt) | 2015-05-07 | 2016-04-08 | módulo amplificador de baixo ruído com acoplador de saída |
Country Status (8)
Country | Link |
---|---|
US (1) | US9515749B2 (pt) |
EP (1) | EP3292629A1 (pt) |
JP (1) | JP2018515037A (pt) |
KR (1) | KR20180004135A (pt) |
CN (1) | CN107580753B (pt) |
BR (1) | BR112017023910A2 (pt) |
TW (1) | TWI618348B (pt) |
WO (1) | WO2016178794A1 (pt) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9859930B2 (en) * | 2015-08-11 | 2018-01-02 | Mediatek Inc. | Multi-path low-noise amplifier and associated low-noise amplifier module and receiver |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07118620B2 (ja) * | 1987-04-21 | 1995-12-18 | 日本電気株式会社 | 双方向性増幅器 |
US5105166A (en) * | 1989-11-30 | 1992-04-14 | Raytheon Company | Symmetric bi-directional amplifier |
KR100295097B1 (ko) * | 1998-08-22 | 2001-08-07 | 오길록 | 광게이트를이용한광공간분할스위칭장치 |
US7116851B2 (en) * | 2001-10-09 | 2006-10-03 | Infinera Corporation | Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance |
US7206516B2 (en) * | 2002-04-30 | 2007-04-17 | Pivotal Decisions Llc | Apparatus and method for measuring the dispersion of a fiber span |
US6922102B2 (en) * | 2003-03-28 | 2005-07-26 | Andrew Corporation | High efficiency amplifier |
US7239852B2 (en) * | 2003-08-01 | 2007-07-03 | Northrop Grumman Corporation | Asymmetric, optimized common-source bi-directional amplifier |
EP1523094A1 (en) | 2003-10-07 | 2005-04-13 | Texas Instruments Incorporated | Automatically adjusting low noise amplifier |
RU2470456C2 (ru) * | 2007-05-04 | 2012-12-20 | Астриум Лимитед | Многопортовые усилители в спутниках связи |
JP4949193B2 (ja) * | 2007-10-23 | 2012-06-06 | ティーオーエー株式会社 | オーディオパワーアンプ |
US7705681B2 (en) * | 2008-04-17 | 2010-04-27 | Infineon Technologies Ag | Apparatus for coupling at least one of a plurality of amplified input signals to an output terminal using a directional coupler |
JP5444173B2 (ja) * | 2010-09-08 | 2014-03-19 | 株式会社東芝 | 増幅器及びアンプ制御方法 |
US20130043946A1 (en) * | 2011-08-16 | 2013-02-21 | Qualcomm Incorporated | Low noise amplifiers with combined outputs |
US9154356B2 (en) | 2012-05-25 | 2015-10-06 | Qualcomm Incorporated | Low noise amplifiers for carrier aggregation |
US9300420B2 (en) * | 2012-09-11 | 2016-03-29 | Qualcomm Incorporated | Carrier aggregation receiver architecture |
US9031158B2 (en) * | 2012-10-08 | 2015-05-12 | Qualcomm Incorporated | Transmit diversity architecture with optimized power consumption and area for UMTS and LTE systems |
US9543903B2 (en) | 2012-10-22 | 2017-01-10 | Qualcomm Incorporated | Amplifiers with noise splitting |
US9048928B2 (en) * | 2012-11-13 | 2015-06-02 | Qualcomm Incorporated | Expandable transceivers and receivers |
US8774745B2 (en) * | 2012-12-10 | 2014-07-08 | Qualcomm Incorporated | Reconfigurable receiver circuits for test signal generation |
US9154243B2 (en) | 2012-12-17 | 2015-10-06 | Qualcomm Incorporated | Receiver calibration with LO signal from inactive receiver |
US9106185B2 (en) | 2013-03-11 | 2015-08-11 | Qualcomm Incorporated | Amplifiers with inductive degeneration and configurable gain and input matching |
US9154087B2 (en) | 2013-08-01 | 2015-10-06 | Qualcomm Incorporated | Amplifiers with configurable mutually-coupled source degeneration inductors |
-
2015
- 2015-05-07 US US14/706,917 patent/US9515749B2/en active Active
-
2016
- 2016-04-08 WO PCT/US2016/026679 patent/WO2016178794A1/en active Application Filing
- 2016-04-08 BR BR112017023910A patent/BR112017023910A2/pt not_active Application Discontinuation
- 2016-04-08 KR KR1020177032016A patent/KR20180004135A/ko unknown
- 2016-04-08 JP JP2017557171A patent/JP2018515037A/ja active Pending
- 2016-04-08 EP EP16716805.3A patent/EP3292629A1/en active Pending
- 2016-04-08 CN CN201680026338.1A patent/CN107580753B/zh active Active
- 2016-04-11 TW TW105111241A patent/TWI618348B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN107580753B (zh) | 2021-03-23 |
US20160329976A1 (en) | 2016-11-10 |
US9515749B2 (en) | 2016-12-06 |
KR20180004135A (ko) | 2018-01-10 |
TWI618348B (zh) | 2018-03-11 |
EP3292629A1 (en) | 2018-03-14 |
TW201640818A (zh) | 2016-11-16 |
JP2018515037A (ja) | 2018-06-07 |
CN107580753A (zh) | 2018-01-12 |
WO2016178794A1 (en) | 2016-11-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B11A | Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing | ||
B11Y | Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette] |