CN107533988B - 基于热塑性聚合物的金属导电热熔性糊料 - Google Patents
基于热塑性聚合物的金属导电热熔性糊料 Download PDFInfo
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- CN107533988B CN107533988B CN201680022381.0A CN201680022381A CN107533988B CN 107533988 B CN107533988 B CN 107533988B CN 201680022381 A CN201680022381 A CN 201680022381A CN 107533988 B CN107533988 B CN 107533988B
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- Life Sciences & Earth Sciences (AREA)
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- Conductive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Non-Insulated Conductors (AREA)
Abstract
一种电气部件,该电气部件包含端电极(104,105)和在该端电极上形成的热熔性聚合物层(即,焊膏),其中该热熔性聚合物层包含(i)100重量份的金属粉末和(ii)1至30重量份的热塑性聚合物,其中该聚合物的熔体质量流动速率(MFR)在120℃至200℃和0.3至8kgf下为0.5至20g/10min。
Description
技术领域
本发明涉及电气部件及其制造方法。
背景技术
电气部件安装在电路上并由焊料接合。该焊料需要在该电气部件的端电极上铺展开。
EP0720187披露了具有由含有银颗粒和玻璃料的组合物制成的端电极的多层电容器。
发明内容
目的是提供具有优异的可焊性的电气部件。
本发明的一个方面涉及一种电气部件,该电气部件包含端电极和在该端电极上形成的热熔性聚合物层,其中该热熔性聚合物层包含(i)100重量份的金属粉末和(ii)1至30重量份的聚合物,其中该聚合物的熔体质量流动速率(MFR)在120℃至200℃和0.3至8kgf下为0.5至20g/10min。
本发明的另一方面涉及一种制造电气部件的方法,该方法包括以下步骤:提供包括主体的电气部件,其中至少一个端电极在该主体上形成;在该端电极上施用热熔性聚合物糊料,其中该热熔性聚合物糊料包含(i)100重量份的金属粉末、(ii)1至30重量份的聚合物和(iii)溶剂,其中该聚合物的熔体质量流动速率(MFR)在120℃至200℃和0.3至8kgf下为0.5至15g/10min;并干燥所施用的热熔性聚合物糊料。
本发明的另一方面涉及一种电气部件,该电气部件包含端电极和在该端电极上形成的热熔性聚合物层,其中该热熔性聚合物层包含(i)100重量份的金属粉末和(ii)1至30重量份的聚合物,其中该聚合物选自下组,该组由以下各项组成:聚酯树脂、苯氧基树脂、酚醛清漆树脂、环氧树脂、丙烯酸树脂、三聚氰胺树脂、聚酰亚胺树脂、聚酰胺树脂、聚苯乙烯树脂、丁缩醛树脂、纤维素树脂、聚乙烯醇、聚氨酯树脂、硅酮树脂及其混合物。
可以通过本发明提供具有优异的可焊性的电气部件。
附图说明
图1是电气部件的示意性截面图。
图2是用于说明在基板上安装电气部件的步骤的电气装置的制造方法的示意性截面图。
图3是用于说明在回流焊的步骤的电气装置的制造方法的示意性截面图。
图4是实例1和对比实例1中的回流焊接的结果。
具体实施方式
以下结合图1至图3说明电气部件和焊接该电气部件的方法。
电气部件
作为电容器的电气部件100在图1中示出。电气部件100包括端电极104和在该端电极上形成的热熔性聚合物层105。该端电极被定义为与诸如电路的外部导电元件电力地且物理地连接的电极。图1中的电容器包括主体101和在主体101的两侧的端电极104以及在这两个端电极上的热熔性聚合物层105。
在一个实施例中,该电容器的主体101是由陶瓷层102和内部电极层103组成的层压体。
在一个实施例中,端电极104可以是烧制型电极或固化型电极。在一个实施例中,该烧制型电极可以通过以下方式形成:施用典型地包含导电粉末、玻璃料和有机载体的导电糊料;并烧制该导电糊料。在另一个实施例中,该固化型电极可以通过以下方式形成:施用包含导电粉末和热固性聚合物的可热固化的导电糊料;并且加热该可热固化的导电糊料。
在一个实施例中,用于端电极的导电粉末可以是银、铜、镍或其混合物。
在一个实施例中,该端电极为10至50μm厚。
在端电极104上形成热熔性聚合物层105。热熔性聚合物层被定义为在回流焊温度下熔化。回流焊是通过加热熔化焊膏以将电气部件附接到电路的过程。
在一个实施例中,通过在端电极104上施用热熔性聚合物糊料,诸如浸渍、丝网印刷和转印来形成热熔性聚合物层105。热熔性聚合物层105包含金属粉末和聚合物以及溶剂。然后将所施用的热熔性聚合物糊料变干以除去溶剂。干燥温度在一个实施例中可以为50℃至200℃,在一个实施例中为60℃至180℃,在另一个实施例中为90℃至160℃。
在一个实施例中,可以在端电极104的整个表面上形成热熔性聚合物层105。在另一实施例中,热熔性聚合物层105可部分地形成在端电极104上。热熔性聚合物层105可以至少在与焊膏(当在其上安装时)接触的区域在端电极上形成。在另一个实施例中,端电极104的至少70%的表面可以被热熔性聚合物层105覆盖。在另一个实施例中,端电极104可以被热熔性聚合物层105完全覆盖。
热熔性聚合物层在一个实施例中为1至30μm厚,在另一个实施例中为3至25μm厚,并且在另一个实施例中为5至15μm厚。
在实施例中,热熔性聚合物层不包含玻璃料。
在实施例中,热熔性聚合物层不包含固化剂或交联剂。
在如图2所示的实施例中,电气部件100安装在电路板上。
制备在其表面上具有电路202的基板201。在一个实施例中,基板201可以是刚性的或柔性的。在另一实施例中基板201可以是酚醛纸基板、环氧纸基板、玻璃环氧树脂基板、陶瓷基板、低温共烧陶瓷(LTCC)基板、聚合物膜、玻璃基板、陶瓷基板或其组合。在一个实施例中,电路202可以由电镀金属、金属箔或厚膜导电糊料制成。
在一个实施例中,焊膏203被印刷在电路202上。焊膏203典型地包含焊料粉末和助焊剂。该焊料粉末是含有具有低熔点的金属的金属合金。在一个实施例中,焊膏203包括选自下组的焊料粉末,该组由以下各项组成:Sn/Pb、Sn/Pb/Bi、Sn/Sb、Sn/Cu、Sn/Ag/Cu、Sn/Zn/Bi、Sn/Zn/Al、Sn/Ag/In/Bi和Sn/Ag/Cu/Ni及其混合物。
在另一个实施例中,焊膏203是无铅的。无铅焊料是环保的,然而与含铅焊料相比,经常导致较低的可焊性。即使使用无铅焊膏,本发明的电气部件也可以具有足够的可焊性。
焊膏可以在市场上购买,例如来自森居金属实业有限公司(Senju MetalIndustry Co.,Ltd.)的Eco 来自石川金属有限公司(Ishikawa Metal Co.,Ltd.)的和来自松尾翰达岛有限公司(Matsuo Handa Co.,Ltd.)的Fine
当热熔性聚合物层105到达焊膏203上时,将电容器100安装在该焊膏上,如图2所示。
然后将组件回流焊。加热可以通过使该组件穿过回流焊炉或在红外线灯下或通过用热空气笔状物焊接单个接头来实现。
在回流焊期间,焊料可以物理地和电力地连接端电极104和电路202。回流焊温度在一个实施例中为100℃至350℃,在另一个实施例中为150℃至310℃,在另一个实施例中为200℃至290℃。回流焊时间在一个实施例中是1至60秒,在另一个实施例中是4至30秒,并且在另一个实施例中是6至20秒。加热温度和时间考虑到它们的组合是可调节的,例如长时间的低温和短时间的高温。
在回流焊期间,在熔融该热熔性聚合物层时,焊膏203熔化以在端电极104上向上铺展开,如图3所示。热熔性聚合物层105中的金属粉末可与熔融焊料203熔融成合金。当熔融焊料由于其较高的比重在端电极上铺展开时,热熔性聚合物层中的聚合物可移开。在一个实施例中,焊料的比重为7至10g/cm3。在一个实施例中,聚合物的比重为0.8至2.0。
在一个实施例中,电气部件100可以是电阻器、电容器、电感器或半导体。
以下说明形成热熔性聚合物层的热熔性聚合物糊料。该热熔性聚合物糊料包含(i)100重量份的金属粉末,(ii)1至30重量份的聚合物和(iii)溶剂。
(i)金属粉末
在一个实施例中,该金属粉末可以选自下组,该组由以下各项组成:银、铜、金、钯、铂、铑、镍、铝、镓、铟、锡、锌、铋及其混合物。在另一个实施例中,该金属粉末可以选自下组,该组由以下各项组成:银、镍、锡、锌、铋及其混合物。在另一个实施例中,该金属粉末可以是银。
在一个实施例中,该金属粉末的颗粒可以是呈薄片、球形、结节状或其混合的形式。在另一个实施例中,该金属粉末的颗粒可以是呈薄片的形式。在另一个实施例中,该金属粉末的颗粒可以是球形形状。
该金属粉末的粒径(D50)可以在一个实施例中是0.5至20μm,在另一个实施例中是0.7至15μm,在另一个实施例中是0.9至10μm,在另一个实施例中是1至5μm,在另一个实施例中是0.5至2μm,在另一个实施例中是3至5μm。具有此种粒度的金属粉末可以很好地分散在有机载体中。通过经由采用激光衍射散射法使用Microtrac型号X-100测量粉末直径分布来获得粒径(D50)。
(ii)聚合物
热熔性聚合物层包含金属粉末分散在其中的聚合物。该聚合物在回流焊期间熔化。该聚合物的熔体质量流动速率(MFR)在120℃至200℃和0.3至8kgf下为0.5至20g/10min。该聚合物的MFR可以在120℃至200℃和0.3至8kgf下在另一个实施例中为0.8至15g/10min,在另一个实施例中为1.0至10g/10min。此种聚合物在高温下流化。MFR是熔融聚合物流动的容易性的量度。它被定义为对于一定的温度通过经由重量施用的压力在十分钟内流过具有特定直径和长度的毛细管的以克计的聚合物的质量。在一个实施例中,MFR可以根据JIS7210测量。
MFR在另一个实施例中可以在120℃至150℃的温度下测量,在另一个实施例中可以在180℃至200℃下测量。MFR可以在另一个实施例中在0.5至2.5kgf的压力下测量,在另一个实施例中在1.0至1.5kgf的压力下测量,在另一个实施例中在3至7kgf的压力下测量,在另一个实施例中在4至6kgf的压力下测量。
在130℃和5kgf下,MFR在另一个实施例中为1至10kgf,在另一个实施例中为2至8,在另一个实施例中为2.5至7,并且在另一个实施例中为2.5至4。在190℃和1.2kgf下,MFR在另一个实施例中为1至10kgf,在另一个实施例中为5至10,在另一个实施例中为7至9,并且在另一个实施例中为8至10。
该聚合物的熔点(Tm)在一个实施例中是150℃至400℃,在另一个实施例中是200℃至350℃,在另一个实施例中是250℃至300℃。该聚合物在其熔点变成液体。
在一个实施例中,聚合物具有-25℃至180℃的玻璃化转变点(Tg)。该聚合物的Tg在另一个实施例中是10℃至150℃,在另一个实施例中是20℃至120℃,在另一个实施例中是28℃至100℃,在另一个实施例中是30℃至85℃。该聚合物在其玻璃化转变点开始交替的刚性结晶和弹性无定形区域。
聚合物的分子量(Mw)在一个实施例中为500至100,000,在另一个实施例中为1000至80,000,在另一个实施例中为2,000至50,000,在另一个实施例中为3,000至25,000,并且在另一个实施例中为5,000至9,000。
在一个实施例中,该聚合物可以选自下组,该组由以下各项组成:聚酯树脂、苯氧基树脂、酚醛清漆树脂、环氧树脂、丙烯酸树脂、三聚氰胺树脂、聚酰亚胺树脂、聚酰胺树脂、聚苯乙烯树脂、丁缩醛树脂、纤维素树脂、聚乙烯醇、聚氨酯树脂、硅酮树脂及其混合物。在另一个实施例中,该聚合物可以选自下组,该组由以下各项组成:聚酯树脂、苯氧基树脂、环氧树脂及其混合物。
相对于100重量份的金属粉末,该聚合物在另一个实施例中为2至25重量份、在另一个实施例中为3至20重量份、在另一个实施例中为4至15重量份、在另一个实施例中为6至13重量份。
聚合物在一个实施例中可以是热塑性的。在另一个实施例中,热熔性聚合物糊料不包含热固性聚合物。
(iii)溶剂
溶剂可用于溶解聚合物。在干燥期间溶剂从端电极上的热熔性聚合物糊料蒸发出来。
相对于100重量份的金属粉末,该溶剂在一个实施例中为2至60重量份,在另一个实施例中为9至50重量份,在另一个实施例中为15至40重量份。
溶剂的沸点可以在一个实施例中为120℃至350℃,在另一个实施例中为160℃至320℃,在另一个实施例中为200℃至290℃。
在一个实施例中,该溶剂可以是有机溶剂。
在另一个实施例中,该溶剂可以选自下组,该组由以下各项组成:texanol、萜品醇、卡必醇乙酸酯、乙二醇、丁基卡必醇、二丁基卡必醇、二丁基乙酸酯丙二醇苯基醚、乙二醇单丁醚及其混合物。
可以使用溶剂来调节热熔性聚合物糊料的粘度以优选用于在基板上施用。在一个实施例中,通过Brookfield HBT用10rpm的14号转子测得的聚合物糊料粘度为10至300Pa·s。在浸渍的情况下,导电糊料的粘度可以为10至120Pa·s。
(iv)助焊剂
聚合物糊料可以进一步包含助焊剂。助焊剂可以通过去除焊接目标表面上的抑制剂如氧化来增加端电极的可焊性。该聚合物糊料在一个实施例中包括0.1至3重量份的助焊剂,在另一个实施例中包括0.4至2重量份的助焊剂,在另一个实施例中包括0.5至1.2重量份的助焊剂。回流焊后该助焊剂保留在热熔性聚合物层中。
助焊剂可以在市场上购买,例如来自东京化工株式会社(Tokyo ChemicalIndustry Co.,Ltd.)的A0001,以及来自森居金属实业有限公司的PO-F-1010S。
(v)添加剂
可以基于糊料的所需特性,向聚合物糊料中添加添加剂如表面活性剂、分散剂、稳定剂和增塑剂。
在另一个实施例中,热熔性聚合物糊料不包含玻璃料。
在另一个实施例中,热熔性聚合物糊料不包含固化剂或交联剂。
实例
本发明通过以下实例来说明但不限于以下实例。
实例1和对比实例1
如下制备热熔性聚合物糊料。
将100重量份的球形银粉和10.5重量份的聚酯聚合物(在130℃和5kgf下,MFR为6.59g/10min,Tg为36℃,Mw为16000,来自日本合成化工有限公司(Nippon SyntheticChemical Industry Co.,Ltd.)的Nichigo-TP249)、二丁基卡必醇(作为溶剂)和添加剂在混合器中然后通过三辊研磨机充分混合直至金属粉末充分分散。用方法A通过熔体指数测定仪(D4003,丹尼斯科公司(Dynisco Corporate))测量MFR。通过进一步添加该溶剂将糊料粘度调节至约为30Pa·s(通过Brookfield HBT用50rpm的14号转子测得的)。银粉的粒径(D50)为1.3μm。
制备了两侧上具有端电极的片式电感器。这些端电极通过丝网印刷可热固化的导电糊料、然后在170℃下固化30分钟制成。电极由91wt.%的铜粉和9wt.%酚醛树脂组成。端电极厚度为40μm。
通过浸渍在以上制备的聚合物糊料中,在端电极上形成热熔性聚合物层。将施用的聚合物糊料在120℃下干燥30分钟至10μm厚的热熔性聚合物层。
将无Pb焊膏(Sn/Ag/Cu=96.5/3/0.5,M705,森居金属实业有限公司)印刷在陶瓷基板上。焊膏的印刷图案是3mm宽、3mm长和250μm厚的两个正方形。当每个端电极和热熔性聚合物层都来到焊膏图案上时,将该片式电感器安装在焊膏图案上,然后在260℃下回流焊10秒。为了比较,将没有热熔性聚合物层的片式电感器单独安装在焊膏上(对比实例1)。
与如图4中左侧所示的对比实例1中没有热熔性聚合物层的电气部件相比较,如图4中右侧所示的实例1中焊料在端电极上更向上铺展开。
实例2至7以及对比实例2至3
检查热熔性聚合物糊料组合物。
用表1所示的组成制备热熔性聚合物糊料。球形和薄片状银粉的粒径(D50)分别为1.3μm和4.0μm。该聚合物的熔体质量流动速率(MFR)、玻璃化转变点(Tg)和分子量(Mw)如下所示。
-苯氧基树脂:在190℃和1.2kgf下,MFR为1.17g/10min;Tg 92℃;Mw=52,000。
-聚酯树脂A:在130℃和5kgf下,MFR为6.59g/10min;Tg 36℃;Mw=16000。
-聚酯树脂B:在190℃和1.2kgf下,MFR为8.68g/10min;Tg 65℃;Mw=16000。
-环氧树脂:在130℃和5kgf下,MFR为2.72g/10min;Tg 65℃;Mw=7000。
-酚醛树脂:热固性聚合物。
制备其上形成有固化型电极的陶瓷基板。该固化型电极通过丝网印刷与实例1相同的可热固化的导电糊料形成。该固化型电极的图案为25mm长、12mm宽和33μm厚的正方形。
将以上制备的热熔性聚合物糊料丝网印刷在该固化型电极上。将印刷的热熔性聚合物糊料在120℃下干燥30分钟,由此蒸发该糊料中的溶剂。该热熔性聚合物层是25mm长、12mm宽和10μm厚的正方形。
将与实例1相同的无铅焊膏丝网印刷在该热熔性聚合物层上。焊膏图案是直径为6mm并且厚度为250μm的圆。
将具有电极层、热熔性糊料层和焊膏层的陶瓷基板放置在热板上以便在260℃下回流焊10秒。在回流焊期间,焊膏熔化以铺展到电极上。
冷却至室温后,通过如下观察铺展的焊料面积,(回流的焊料面积)/(印刷的焊膏面积)×100,目视测量焊料铺展率(%)。
在其中采用热熔性聚合物层的实例2至7中,焊料铺展率超过100%。同时,在其中形成热固性聚合物层的对比实例(Com.Ex.)2和3中,焊料铺展率为100%,根本没有铺展开。
Claims (15)
1.一种电气部件,所述电气部件选自下组:电阻器、电容器、电感器或半导体,所述电气部件包含主体、在该主体上形成的端电极和在该端电极上形成的热熔性聚合物层,其中该热熔性聚合物层包含(i)100重量份的银粉末和(ii)1至30重量份的聚合物,其中该聚合物的熔体质量流动速率(MFR)在120℃至200℃和0.3至8kgf下为0.5至20g/10min。
2.如权利要求1所述的电气部件,其中该银粉末含有薄片状、球形、结节状或其混合的颗粒。
3.如权利要求1所述的电气部件,其中该银粉末含有直径(D50)为0.5至20μm的颗粒。
4.如权利要求1所述的电气部件,其中该聚合物的玻璃化转变点(Tg)为-25℃至180℃。
5.如权利要求1所述的电气部件,其中该聚合物的分子量为500至100,000。
6.如权利要求1所述的电气部件,其中该热熔性聚合物层还包含0.1至3重量份的助焊剂。
7.如权利要求1所述的电气部件,其中该聚合物选自下组,该组由以下各项组成:聚酯树脂、苯氧基树脂、酚醛清漆树脂、环氧树脂、丙烯酸树脂、三聚氰胺树脂、聚酰亚胺树脂、聚酰胺树脂、聚苯乙烯树脂、丁缩醛树脂、纤维素树脂、聚乙烯醇、聚氨酯树脂、硅酮树脂及其混合物。
8.如权利要求1所述的电气部件,其中该电气部件是电阻器、电容器或电感器。
9.一种制造电气部件的方法,所述电气部件选自下组:电阻器、电容器、电感器或半导体,该方法包括以下步骤:
提供包括主体的电气部件,其中至少一个端电极在该主体上形成;
在该端电极上施用热熔性聚合物糊料,其中该热熔性聚合物糊料包含(i)100重量份的银粉末、(ii)1至30重量份的聚合物和(iii)溶剂,其中该聚合物的熔体质量流动速率(MFR)在120℃至200℃和0.3至8kgf下为0.5至15g/10min;并且
干燥所施用的热熔性聚合物糊料。
10.如权利要求9所述的方法,其中该银粉末含有薄片状、球形、结节状或其混合的颗粒。
11.如权利要求9所述的方法,其中该聚合物选自下组,该组由以下各项组成:聚酯树脂、苯氧基树脂、酚醛清漆树脂、环氧树脂、丙烯酸树脂、三聚氰胺树脂、聚酰亚胺树脂、聚酰胺树脂、聚苯乙烯树脂、丁缩醛树脂、纤维素树脂、聚乙烯醇、聚氨酯树脂、硅酮树脂及其混合物。
12.如权利要求9所述的方法,其中该热熔性聚合物糊料还包含0.1至3重量份的助焊剂。
13.如权利要求9所述的方法,其中该干燥温度是50℃至200℃。
14.如权利要求10所述的方法,其中该电气部件是电阻器、电容器或电感器。
15.一种电气部件,所述电气部件选自下组:电阻器、电容器、电感器或半导体,所述电气部件包含主体、在该主体上形成的端电极和在该端电极上形成的热熔性聚合物层,其中该热熔性聚合物层包含(i)100重量份的银粉末和(ii)1至30重量份的聚合物,其中该聚合物选自下组,该组由以下各项组成:聚酯树脂、苯氧基树脂、酚醛清漆树脂、环氧树脂、丙烯酸树脂、三聚氰胺树脂、聚酰亚胺树脂、聚酰胺树脂、聚苯乙烯树脂、丁缩醛树脂、纤维素树脂、聚乙烯醇、聚氨酯树脂、硅酮树脂及其混合物。
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Publication number | Priority date | Publication date | Assignee | Title |
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Family Cites Families (16)
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US5062896A (en) * | 1990-03-30 | 1991-11-05 | International Business Machines Corporation | Solder/polymer composite paste and method |
US5354918A (en) * | 1992-07-17 | 1994-10-11 | Shin-Etsu Chemical Co., Ltd. | Highly pure monoalkylphosphine |
JPH08186049A (ja) | 1994-12-28 | 1996-07-16 | Du Pont Kk | 多層コンデンサー用端子電極組成物 |
JPH09260822A (ja) * | 1996-03-18 | 1997-10-03 | Teikoku Tsushin Kogyo Co Ltd | 基板への半田による電子部品接続固定構造 |
US6238599B1 (en) * | 1997-06-18 | 2001-05-29 | International Business Machines Corporation | High conductivity, high strength, lead-free, low cost, electrically conducting materials and applications |
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US6814795B2 (en) * | 2001-11-27 | 2004-11-09 | Ferro Corporation | Hot melt conductor paste composition |
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JP2007091959A (ja) * | 2005-09-30 | 2007-04-12 | Sumitomo Electric Ind Ltd | 異方導電性接着剤 |
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